title: Design issues for lateral double-diffused metal-oxide-semiconductor with higher breakdown voltage.
abstract: In this paper, we discuss a new High-Side nLDMOSFET whose breakdown voltage is over 100 V while meeting the thermal budget for the conventional process. The proposed n-channel lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) has a feature in that the structure comprises a gap of 5 microm between the DEEP N-WELL and the center of the source, the surface of which is implanted by the NADJUST-layer for high breakdown voltage and simultaneously the low specific on-resistance. The computer simulation of the proposed High-Side nLDMOS exhibits BVdss of 126 V and R(ON,sp) of as low as 2.50 m(omega) x cm2. The NBL, which plays a significant role as a blocking layer against the punch-through seems to function as a hurdle for increasing the breakdown voltage.
authors.affiliation: Department of Electrical Engineering, School of Engineering, Inha University, Incheon 402-751, Korea.
authors.forename: Kunsik
authors.initials: K
authors.lastname: Sung
authors.forename: Taeyoung
authors.initials: T
authors.lastname: Won
mesh_terms: D004058:Diffusion; D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D014173:Transistors, Electronic