title: Gradual electroforming and memristive switching in Pt/CuO(x)/Si/Pt systems.
abstract: We report a memristive switching effect in Pt/CuOx/Si/Pt devices prepared by the rf sputtering technique at room temperature. Differently from other Cu-based metal filament switching systems, a gradual electroforming process, marked by a gradual increase of the device resistance and a gradual decrease of the device capacitance, was observed in the current-voltage and capacitance characteristics. After the gradual electroforming, the devices show a uniform memristive switching behavior. By Auger electron spectroscopy analysis, a model based on the thickness change of the SiOx layer at the CuOx/Si interface and Cu ion migration is proposed for the gradual electroforming and uniform memristive switching, respectively. This work should be meaningful for the preparation of forming-free and homogeneous memristive devices.
authors.affiliation: State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, People's Republic of China.
authors.forename: L L
authors.initials: LL
authors.lastname: Wei
authors.forename: D S
authors.initials: DS
authors.lastname: Shang
authors.forename: J R
authors.initials: JR
authors.lastname: Sun
authors.forename: S B
authors.initials: SB
authors.lastname: Lee
authors.forename: Z G
authors.initials: ZG
authors.lastname: Sun
authors.forename: B G
authors.initials: BG
authors.lastname: Shen