title: Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.
abstract: We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures. The film samples showed the different infrared absorption spectra of 2,000 and 2,100 cm(-1), which are corresponding to the chemical bonds of SiH and SiH2, respectively. The a-Si:H sample with the relatively high silane concentration provides the absorption peak of SiH bond, but the microc-Si:H sample with the relatively low silane concentration provides the absorption peak of SiH2 bond as well as SiH bond. Furthermore, the microc-Si:H sample showed the Raman spectral shift of 520 cm(-1) for crystalline phase Si bonds as well as the 480 cm(-1) for the amorphous phase Si bonds. These bonding structures are very consistent with the further analysis of the long-wavelength photoconduction tail and the formation of nanocrystalline Si structures. The microc-Si:H thin film solar cell has the photovoltaic behavior of open circuit voltage similar to crystalline silicon thin film solar cell, indicating that microc-Si:H thin film with the mixed phase of amorphous and nanocrystalline structures show the carrier transportation through the channel of nanocrystallites.
authors.affiliation: Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University, Jeonju 561-756, RO Korea.
authors.forename: Seungil
authors.initials: S
authors.lastname: Park
authors.forename: Bhaskar
authors.initials: B
authors.lastname: Parida
authors.forename: Keunjoo
authors.initials: K
authors.lastname: Kim
mesh_terms: D011211:Electric Power Supplies; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005740:Gases / Q000737:chemistry; D006358:Hot Temperature; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D012993:Solar Energy
chemical_list: D005740:Gases; D008567:Membranes, Artificial; D012825:Silicon