title: Synthesis of a p-type semiconducting phenothiazine exfoliatable layered crystal.
abstract: Phenothiazine (PTZ) crystals are grown by a physical vapor transport method in a horizontal tube furnace. The resulting disk-type PTZ single crystals have a layered structure, which can be mechanically exfoliated into stacked individual layers to exhibit various colors depending on the thickness. The PTZ single-crystal field-effect transistor (FET) devices exhibit a p-type semiconducting property with 3.03 × 10(-6) S/cm electrical conductivity, 1.15 × 10(-4) cm(2)/(V s) carrier mobility, and a 10(4) on/off ratio.
authors.affiliation: Department of Chemistry, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam-Gu, Pohang 790-784, Korea.
authors.forename: Minkyung
authors.initials: M
authors.lastname: Lee
authors.forename: Ji Eun
authors.initials: JE
authors.lastname: Park
authors.forename: Chibeom
authors.initials: C
authors.lastname: Park
authors.forename: Hee Cheul
authors.initials: HC
authors.lastname: Choi
mesh_terms: D003460:Crystallization; D008958:Models, Molecular; D010316:Particle Size; D010640:Phenothiazines / Q000138:chemical synthesis* / Q000737:chemistry; D012666:Semiconductors; D013499:Surface Properties
chemical_list: D010640:Phenothiazines