title: Electrochemical properties of Sn-substituted LiMn2O4 thin films prepared by radio-frequency magnetron sputtering.
abstract: The LiMn2O4 and LiSn0.0125Mn1975O4 thin films were grown on Pt/Ti/SiO2/Si (100) substrate by RF magnetron sputtering. To obtain the structural stability and good cycle performance, deposition parameters, namely working pressure, sputtering gas ratio of Ar and O2, post-annealing temperature were established. The structure and surface morphology of thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The electrochemical properties were estimated by two electrode half-cell test with WBCS 3000 (Wonatech, Korea) at constant current rate of 1 C-rate. The Sn substituted LiMn2O4 thin film deposited at 10 mtorr with mixture of argon and oxygen (Ar/O2 = 3/1) and then annealed at 500 degrees C in O2 atmosphere showed good cycle performance. The Sn substituted LiMn2O4 thin films showed larger capacity of -30 microAh/microm-cm2 and higher cyclability than LiMn2O4 thin films.
authors.affiliation: Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, South Korea.
authors.forename: Woo Yeon
authors.initials: WY
authors.lastname: Kong
authors.forename: Haena
authors.initials: H
authors.lastname: Yim
authors.forename: Seok-Jin
authors.initials: SJ
authors.lastname: Yoon
authors.forename: Sahn
authors.initials: S
authors.lastname: Nahm
authors.forename: Ji-Won
authors.initials: JW
authors.lastname: Choi
mesh_terms: D004553:Electric Conductivity; D004563:Electrochemistry / Q000379:methods; D006358:Hot Temperature; D008094:Lithium / Q000737:chemistry* / Q000528:radiation effects; D060526:Magnetic Fields; D008345:Manganese / Q000737:chemistry* / Q000528:radiation effects; D008422:Materials Testing; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure*; D010087:Oxides / Q000737:chemistry* / Q000528:radiation effects; D011846:Radio Waves; D014001:Tin / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D008567:Membranes, Artificial; D010087:Oxides; C488552:lithium manganese oxide; D008345:Manganese; D014001:Tin; D008094:Lithium