title: Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.
abstract: Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on a single Si-NW array composed of five nanowires aligned in parallel and connected in series to form NOT-logic circuits. The excellent flexibility of the fabricated device was confirmed by bending-cycling tests. The voltage-transfer curve of the NOT-logic circuits showed an inverting operation with a logic swing of -92% and voltage gain of -2.5.
authors.affiliation: School of Electrical Engineering, Korea University, Seoul 136-713, Korea.
authors.forename: Youngin
authors.initials: Y
authors.lastname: Jeon
authors.forename: Jeongmin
authors.initials: J
authors.lastname: Kang
authors.forename: Myeongwon
authors.initials: M
authors.lastname: Lee
authors.forename: Taeho
authors.initials: T
authors.lastname: Moon
authors.forename: Sangsig
authors.initials: S
authors.lastname: Kim
mesh_terms: D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D010969:Plastics / Q000737:chemistry*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D010969:Plastics; D012825:Silicon