title: High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.
abstract: Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.
authors.affiliation: Institute of Physics of the AS CR, v.v.i. Cukrovarnická 10/112, 162 00 Prague 6, Czech Republic.
authors.forename: Mariana
authors.initials: M
authors.lastname: Klementová
authors.forename: Lukás
authors.initials: L
authors.lastname: Palatinus
authors.forename: Filip
authors.initials: F
authors.lastname: Novotný
authors.forename: Radek
authors.initials: R
authors.lastname: Fajgar
authors.forename: Jan
authors.initials: J
authors.lastname: Subrt
authors.forename: Vladislav
authors.initials: V
authors.lastname: Drínek