title: Enhancement in the microstructure and photoluminescence properties of YVO4:Eu3+ by Al doping.
abstract: Al contents have been doped as a sensitizer to improve the luminescent brightness, and the conventional solid state reaction method has been used to synthesize the phosphors. Al doping effects on the microstructures of YVO4:Eu3+ phosphors were measured by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The luminescent characteristics were characterized by photoluminescence excitation (PLE) and emission (PL) measurements. Incorporation of Al3+ ions into the YVO4:Eu phosphors has greatly enhanced the crystallinity, particle size and hence the luminescence properties and the optimum concentration in Al dopants are found to be 0.05 mol. The photoluminescence intensity of 0.05 mol Al(3+)-doped YVO4:Eu3+ phosphors was improved by a factor of 1.41, in comparison with undoped Y0.95Eu0.05VO4 phosphor. The improvement in photoluminescence properties with Al doping may result from the improved crystallinity and from the enlarged grain sizes inducing lower scattering loss.
authors.affiliation: Department of Electronic Materials Engineering, Silla University, Busan 617-736, Republic of Korea.
authors.forename: Pyeong Ji
authors.initials: PJ
authors.lastname: Shin
authors.forename: R
authors.initials: R
authors.lastname: Balakrishnaiah
authors.forename: Soung Soo
authors.initials: SS
authors.lastname: Yi
authors.forename: Kiwan
authors.initials: K
authors.lastname: Jang
authors.forename: Ho Sueb
authors.initials: HS
authors.lastname: Lee
authors.forename: Dong-Soo
authors.initials: DS
authors.lastname: Shin
authors.forename: Jung Hyun
authors.initials: JH
authors.lastname: Jeong