title: Optical and structural properties of Al-doped ZnO thin films by sol gel process.
abstract: Transparent conducting oxide (TCO) materials with high transmittance and good electrical conductivity have been attracted much attention due to the development of electronic display and devices such as organic light emitting diodes (OLEDs), and dye-sensitized solar cells (DSSCs). Aluminum doped zinc oxide thin films (AZO) have been well known for their use as TCO materials due to its stability, cost-effectiveness, good optical transmittance and electrical properties. Especially, AZO thin film, which have low resistivity of 2-4 x 10(-4) omega x cm which is similar to that of ITO films with wide band gap semiconductors. The AZO thin films were deposited on glass substrates by sol-gel spin-coating process. As a starting material, zinc acetate dihydrate (Zn(CH3COO)2 x 2H2O) and aluminum chloride hexahydrate (AlCl3 6H2O) were used. 2-methoxyethanol and monoethanolamine (MEA) were used as solvent and stabilizer, respectively. After deposited, the films were preheated at 300 degrees C on a hotplate and post-heated at 650 degrees C for 1.5 hrs in the furnace. We have studied the structural and optical properties as a function of Al concentration (0-2.5 mol.%).
authors.affiliation: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea.
authors.forename: Min-Chul
authors.initials: MC
authors.lastname: Jun
authors.forename: Jung-Hyuk
authors.initials: JH
authors.lastname: Koh
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D008422:Materials Testing; D008567:Membranes, Artificial; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D044367:Phase Transition; D012031:Refractometry; D013499:Surface Properties; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D008567:Membranes, Artificial; D000535:Aluminum; D015034:Zinc Oxide