title: Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.
abstract: Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.
authors.affiliation: Department of Physics, Chungnam National University, Daejoen 305-764, Republic of Korea.
authors.forename: Nojoon
authors.initials: N
authors.lastname: Myoung
authors.forename: Kyungchul
authors.initials: K
authors.lastname: Seo
authors.forename: Seung Joo
authors.initials: SJ
authors.lastname: Lee
authors.forename: G
authors.initials: G
authors.lastname: Ihm