title: Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory.
abstract: This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Ω-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 104 program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, 101, Section 2 Kuang Fu Road, Hsinchu, 30013, Taiwan. ycwu@ess.nthu.edu.tw.
authors.forename: Mu-Shih
authors.initials: MS
authors.lastname: Yeh
authors.forename: Yung-Chun
authors.initials: YC
authors.lastname: Wu
authors.forename: Min-Feng
authors.initials: MF
authors.lastname: Hung
authors.forename: Kuan-Cheng
authors.initials: KC
authors.lastname: Liu
authors.forename: Yi-Ruei
authors.initials: YR
authors.lastname: Jhan
authors.forename: Lun-Chun
authors.initials: LC
authors.lastname: Chen
authors.forename: Chun-Yen
authors.initials: CY
authors.lastname: Chang