title: Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.
abstract: We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 °C are ~5tmex larger (~2.6 cm(2)/(V s)) than those of single-layer IGO TFTs (~0.5 cm(2)/(V s)), reaching values comparable to single-layer combustion-processed In2O3 TFTs (~3.2 cm(2)/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is ~0.0 V, and the current on/off ratio is significantly enhanced to ~1 × 10(8) (vs ~1 × 10(4) for In2O3). The microstructure and morphology of the In2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, PR China.
authors.forename: Xinge
authors.initials: X
authors.lastname: Yu
authors.forename: Nanjia
authors.initials: N
authors.lastname: Zhou
authors.forename: Jeremy
authors.initials: J
authors.lastname: Smith
authors.forename: Hui
authors.initials: H
authors.lastname: Lin
authors.forename: Katie
authors.initials: K
authors.lastname: Stallings
authors.forename: Junsheng
authors.initials: J
authors.lastname: Yu
authors.forename: Tobin J
authors.initials: TJ
authors.lastname: Marks
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
mesh_terms: D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D046529:Microscopy, Electron, Transmission; D056951:Photoelectron Spectroscopy; D012666:Semiconductors; D014173:Transistors, Electronic; D014961:X-Ray Diffraction; D015034:Zinc Oxide / Q000737:chemistry
chemical_list: D007204:Indium; C038863:gallium oxide; C047711:indium oxide; D005708:Gallium; D015034:Zinc Oxide