title: Surface passivation of gallium nitride by ultrathin RF-magnetron sputtered Al2O3 gate.
abstract: An ultrathin RF-magnetron sputtered Al2O3 gate on GaN subjected to postdeposition annealing at 800 °C in O2 ambient was systematically investigated. A cross-sectional energy-filtered transmission electron microscopy revealed formation of crystalline Al2O3 gate, which was supported by X-ray diffraction analysis. Various current conduction mechanisms contributing to leakage current of the investigated sample were discussed and correlated with metal-oxide-semiconductor characteristics of this sample.
authors.affiliation: Electronic Materials Research Group, School of Materials & Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia.
authors.forename: Hock Jin
authors.initials: HJ
authors.lastname: Quah
authors.forename: Kuan Yew
authors.initials: KY
authors.lastname: Cheong