title: Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic substrates.
abstract: ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of -100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in FETs. The ZnO-based FETs exhibited a high I(ON)/I(OFF) of > 10(6), with the characteristic of n-type depletion modes. For vertically integrated logic circuits, three multilayer FETs were sequentially prepared. The stacked FETs were connected in series via electrodes, and C-PVPs were used for the layer-isolation material. The NOT and NAND gates exhibited large logic-swing values of -93%. These results demonstrate the feasibility of three dimensional flexible logic circuits.
authors.affiliation: School of Electrical Engineering, Korea University, Seoul 136-713, Korea.
authors.forename: Jeongmin
authors.initials: J
authors.lastname: Kang
authors.forename: Taeho
authors.initials: T
authors.lastname: Moon
authors.forename: Youngin
authors.initials: Y
authors.lastname: Jeon
authors.forename: Hoyoung
authors.initials: H
authors.lastname: Kim
authors.forename: Sangsig
authors.initials: S
authors.lastname: Kim
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010969:Plastics / Q000737:chemistry*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D010969:Plastics; D015034:Zinc Oxide