title: Photocurrent characteristics of HgTe nanoparticle films-Si nanowires heterojunctions made using a simple transfer-dropping method.
abstract: In this study, pn heterojunction diodes are constructed with p-type HgTe nanoparticle (NP) films dropped by a nanoplotter and n-type Si nanowires (NWs) transferred onto plastic substrates and their optoelectronic characteristics are investigated under the illumination of 633-nm wavelength light. The rectification ratio when light is irradiated on the diode is twice that in the dark. The photocurrent efficiency of the diode at a bias voltage of 2.5 V is determined to be 0.41 microA/W, which is greater than that of the transferred Si NWs.
authors.affiliation: Department of Electrical Engineering, Korea University, Seoul 136-713, Korea.
authors.forename: Sukhyung
authors.initials: S
authors.lastname: Park
authors.forename: Kyoungah
authors.initials: K
authors.lastname: Cho
authors.forename: Sangsig
authors.initials: S
authors.lastname: Kim
mesh_terms: D011211:Electric Power Supplies; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008422:Materials Testing; D008567:Membranes, Artificial; D008628:Mercury / Q000737:chemistry* / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects; D013691:Tellurium / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D008567:Membranes, Artificial; D008628:Mercury; D013691:Tellurium; D012825:Silicon