title: Reduction process of dislocation and standby leakage current for embedded flash memory using nano-scale integration.
abstract: We determined that the use of densification, sacrificial oxidation, gate oxidation and source/drain implantation has the capability to reduce the dislocation. A dislocation-free process is proposed, and its mechanism presented in embedded flash memory. The dislocation decreased when n-type ions were implanted at a low energy level for source and drain. A dry oxidation process using only oxygen without hydrogen and oxidation for logic gates led to the formation of a sacrificial oxide on the rapid thermal oxidation (RTP) methods without densification after gap-filling as reducing dislocation processes. These methods dramatically reduced the standby leakage current.
authors.affiliation: School of Integrative Engineering, Chung-Ang University, Seoul 156-756, Korea.
authors.forename: Jong-Won
authors.initials: JW
authors.lastname: Sun
authors.forename: Ji Hwan
authors.initials: JH
authors.lastname: Park
authors.forename: Taek-Seung
authors.initials: TS
authors.lastname: Yang
authors.forename: Heesoo
authors.initials: H
authors.lastname: Choi
authors.forename: Yinhua
authors.initials: Y
authors.lastname: Cui
authors.forename: Eunmi
authors.initials: E
authors.lastname: Choi
authors.forename: Areum
authors.initials: A
authors.lastname: Kim
authors.forename: Lee Seul
authors.initials: LS
authors.lastname: Oh
authors.forename: Sun Jae
authors.initials: SJ
authors.lastname: Lee
authors.forename: Hyunjin
authors.initials: H
authors.lastname: Park
authors.forename: Chang Hyun
authors.initials: CH
authors.lastname: Kim
authors.forename: Soo-Kil
authors.initials: SK
authors.lastname: Kim
authors.forename: Hyungbin
authors.initials: H
authors.lastname: Son
authors.forename: Dong Hyun
authors.initials: DH
authors.lastname: Lee
authors.forename: Sung Gyu
authors.initials: SG
authors.lastname: Pyo