title: High-efficiency GaN-based vertical light-emitting diodes with periodic beveled rod-shaped structures.
abstract: The periodic beveled micro-rods (BMRs) were constructed on the emission surface of GaN-based vertical light-emitting diodes (VLEDs) in order to improve the light-extraction efficiency. It was experimentally demonstrated that the light output power of the VLEDs with a periodic BMR (BMR-VLED) were enhanced about 15.6%, compared with that of the VLEDs with randomly textured surface (RT-VLED) at an injection current of 350 mA. This finding indicates that the photons emitted from the active layer were well out-coupled at an n-GaN surface having a periodic BMR structure, resulting in an increase in the probability of escaping from the VLED structure.
authors.affiliation: LED Research and Business Division, Korea Photonics Technology Institute, Gwangju 500-779, Korea.
authors.forename: Seung Hwan
authors.initials: SH
authors.lastname: Kim
authors.forename: Hyun Ho
authors.initials: HH
authors.lastname: Park
authors.forename: Gye Mo
authors.initials: GM
authors.lastname: Yang
authors.forename: Sang Hern
authors.initials: SH
authors.lastname: Lee
authors.forename: Jong Hyub
authors.initials: JH
authors.lastname: Baek
authors.forename: Jun Seok
authors.initials: JS
authors.lastname: Ha
authors.forename: Young Ho
authors.initials: YH
authors.lastname: Song
authors.forename: Seong Ran
authors.initials: SR
authors.lastname: Jeon
authors.forename: Hyung Jo
authors.initials: HJ
authors.lastname: Park