title: Giant thermovoltage in single InAs nanowire field-effect transistors.
abstract: Millivolt range thermovoltage is demonstrated in single InAs nanowire based field effect transistors. Thanks to a buried heating scheme, we drive both a large thermal bias ΔT > 10 K and a strong field-effect modulation of electric conductance on the nanostructures. This allows the precise mapping of the evolution of the Seebeck coefficient S as a function of the gate-controlled conductivity σ between room temperature and 100 K. Based on these experimental data a novel estimate of the electron mobility is given. This value is compared with the result of standard field-effect based mobility estimates and discussed in relation to the effect of charge traps in the devices.
authors.affiliation: NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Pisa, Italy. s.roddaro@sns.it
authors.forename: Stefano
authors.initials: S
authors.lastname: Roddaro
authors.forename: Daniele
authors.initials: D
authors.lastname: Ercolani
authors.forename: Mian Akif
authors.initials: MA
authors.lastname: Safeen
authors.forename: Soile
authors.initials: S
authors.lastname: Suomalainen
authors.forename: Francesco
authors.initials: F
authors.lastname: Rossella
authors.forename: Francesco
authors.initials: F
authors.lastname: Giazotto
authors.forename: Lucia
authors.initials: L
authors.lastname: Sorba
authors.forename: Fabio
authors.initials: F
authors.lastname: Beltram