title: SiO(x) nanoparticles synthesized by an evaporation and condensation process using induction melting of silicon and gas injection.
abstract: SiO(x) nanoparticles were synthesized using a specially designed induction melting system equipped with a segmented graphite crucible. The graphite crucible with the segmented wall was the key to enhancing the evaporation rate due to the increase of the evaporation area and convection of the silicon melt. Injection of the gas mixture of oxygen (O2) and argon (Ar) on silicon (Si) melt caused the formation of SiO(x) nanoparticles. The evaporated SiO(x) nanoparticles were then cooled and condensed in a process chamber. The effects of the O2/Ar ratio in the injection gas on the microstructures of the SiO(x) nanoparticles were then investigated. Synthesized SiO(x) nanoparticles were proven to be of a homogeneous amorphous phase with average diameters of 30-35 nm. The microstructures were independent from the O2/Ar ratio of the injected gas. However, x increased from 1.36 to 1.84 as the O2/Ar ratio increased. The purity of the synthesized nanoparticles was about 99.9%. SiO(x) nanoparticles could be applied as the active anode material in a lithium (Li) ion secondary battery.
authors.affiliation: Energy Materials and Convergence Research Department, Korea Institute of Energy Research, Daejeon 304-343, Korea.
authors.forename: Bo Yun
authors.initials: BY
authors.lastname: Jang
authors.forename: Jin Seok
authors.initials: JS
authors.lastname: Lee
authors.forename: Joon Soo
authors.initials: JS
authors.lastname: Kim
mesh_terms: D001128:Argon / Q000737:chemistry*; D003460:Crystallization / Q000379:methods*; D006361:Heating; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010100:Oxygen / Q000737:chemistry*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D001128:Argon; D012822:Silicon Dioxide; D010100:Oxygen; D012825:Silicon