title: Real-time pulse measurement of nano-scale field effect transistors: cancellation of displacement current and extraction of coupling capacitance.
abstract: Real-time pulse measurements of nano-scale field effect transistors (FETs) are reported. We demonstrate the direct monitoring of the real-time current of bottom-up assembled silicon nanowire FET and top-down fabricated gate-all-around silicon nanowire FET, both with the diameter of approximately 50 nm. We demonstrate that the displacement current can be cancelled out from the measured pulse responses. On the other hand, the displacement current also can be utilized to obtain the coupling capacitance between the gate and source of the FETs.
authors.affiliation: School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea.
authors.forename: Dae Won
authors.initials: DW
authors.lastname: Kim
authors.forename: In Cheol
authors.initials: IC
authors.lastname: Nam
authors.forename: Hee Tae
authors.initials: HT
authors.lastname: Kim
authors.forename: Dong Hoon
authors.initials: DH
authors.lastname: Hwang
authors.forename: Myung Gil
authors.initials: MG
authors.lastname: Kang
authors.forename: Byoung Hak
authors.initials: BH
authors.lastname: Hong
authors.forename: Seong Joo
authors.initials: SJ
authors.lastname: Lee
authors.forename: Jae Hyun
authors.initials: JH
authors.lastname: Lee
authors.forename: Dongmok
authors.initials: D
authors.lastname: Whang
authors.forename: Sung Woo
authors.initials: SW
authors.lastname: Hwang