title: Additive effect of poly(4-vinylphenol) gate dielectric in organic thin film transistor at low temperature process.
abstract: We fabricated pentacene-based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics. The solution of gate dielectrics is prepared by adding methylated poly[melamine-co-formaldehyde] (MMF) and photo-initiator (PI) [1-phenyl-2-hydroxy-2-methylpropane-1-one, Darocur1173@Ciba] to PVP By using a small amount (2.4 wt%) of PI, the cross-linking temperature is lowered to 90 degrees C, which is lower than general thermal curing reaction temperature for the cross-linked PVP (> 180 degrees C). The hysteresis and the leakage current of the OTFTs are also decreased by adding the MMF and PI in the PVP gate dielectric.
authors.affiliation: Department of Electronics Engineering, Chungnam National University, Yuseong-gu Daejeon 305-764, Korea.
authors.forename: Ho-Jin
authors.initials: HJ
authors.lastname: Yun
authors.forename: Kyu-Ha
authors.initials: KH
authors.lastname: Baek
authors.forename: Lee-Mi
authors.initials: LM
authors.lastname: Do
authors.forename: Kwang-Seok
authors.initials: KS
authors.lastname: Jeong
authors.forename: Yu-Mi
authors.initials: YM
authors.lastname: Kim
authors.forename: Seung-Dong
authors.initials: SD
authors.lastname: Yang
authors.forename: Sang-Youl
authors.initials: SY
authors.lastname: Lee
authors.forename: Hi-Deok
authors.initials: HD
authors.lastname: Lee
authors.forename: Ga-Won
authors.initials: GW
authors.lastname: Lee
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008567:Membranes, Artificial; D053758:Nanoparticles / Q000737:chemistry*; D009930:Organic Chemicals / Q000737:chemistry*; D011145:Polyvinyls / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D008567:Membranes, Artificial; D009930:Organic Chemicals; D011145:Polyvinyls; C509677:poly(4-vinylphenol)