title: Near-infrared photodetection in n-type nanocrystalline FeSi2/p-type Si heterojunctions.
abstract: n-Type nanocrystalline (NC) FeSi2/p-type Si heterojunctions, which were prepared by pulsed laser deposition, were evaluated as a near infrared photodiode. The built-in potential was estimated to be approximately 1.1 eV from the capacitance-voltage measurement. These junctions showed a rectifying behavior accompanied by a large leakage current. The near infrared light detection performance was evaluated using a 1.33 microm laser in the temperature range of 77-300 K. At a reverse bias of -5 V, the detectivity was 5.5 x 10(7) cm Hz1/2 W(-1) at 300 K and it was dramatically enhanced to be 8.0 x 10(10) cm Hz1/2 W(-1) at 77 K. It was demonstrated that NC-FeSi2 is a new potential material applicable to NIR photodetectors operating at low temperatures.
authors.affiliation: Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan.
authors.forename: Nathaporn
authors.initials: N
authors.lastname: Promros
authors.forename: Li
authors.initials: L
authors.lastname: Chen
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Yoshitake
mesh_terms: D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007259:Infrared Rays; D007501:Iron / Q000737:chemistry* / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects*; D010316:Particle Size; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*
chemical_list: D007501:Iron; D012825:Silicon