title: Semi-transparent a-IGZO thin-film transistors with polymeric gate dielectric.
abstract: We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with crosslinked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum approximately 5.8 cm2Ns) and on/off current ratios of approximately 10(6).
authors.affiliation: Department of Materials Science and Engineering, Hongik University, Seoul 121-791, Korea.
authors.forename: Gun Woo
authors.initials: GW
authors.lastname: Hyung
authors.forename: Jian-Xun
authors.initials: JX
authors.lastname: Wang
authors.forename: Zhao-Hui
authors.initials: ZH
authors.lastname: Li
authors.forename: Ja-Ryong
authors.initials: JR
authors.lastname: Koo
authors.forename: Sang Jik
authors.initials: SJ
authors.lastname: Kwon
authors.forename: Eou-Sik
authors.initials: ES
authors.lastname: Cho
authors.forename: Young Kwan
authors.initials: YK
authors.lastname: Kim