title: ZnO piezoelectric fine wire gated graphene oxide field effect transistor.
abstract: Here we report the fabrication and characteristics of graphene oxide (GO) field effect transistor gated with piezopotential of ZnO fine wires on a flexible substrate. The FET device consists of GO thin film on the bottom and ZnO piezoelectric fine wire (PFW) on the top. In the FET device the GO serves as a carrier transport channel and ZnO PFW acts as a gate. When the substrate is bent, a piezopotential is generated in the ZnO PFW. The piezopotential created by the strain in the ZnO PFW was used to control the carrier transport in the GO channel. This device demonstrates the application of piezoelectric ZnO PFW for creating the gating effect on the semiconducting performance of GO film.
authors.affiliation: Department of Mechatronics Engineering, Jeju National University, Jeju-si, Jeju, Korea.
authors.forename: Rajneesh
authors.initials: R
authors.lastname: Mohan
authors.forename: Karthikeyan
authors.initials: K
authors.lastname: Krishnamoorthy
authors.forename: Gui-Sik
authors.initials: GS
authors.lastname: Kim
authors.forename: Sang-Jae
authors.initials: SJ
authors.lastname: Kim
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D006108:Graphite / Q000737:chemistry*; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010087:Oxides / Q000737:chemistry; D010316:Particle Size; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D010087:Oxides; D006108:Graphite; D015034:Zinc Oxide