title: The influence of inelastic scattering on EFTEM images--exemplified at 20 kV for graphene and silicon.
abstract: We present model-based image simulations for zero-loss and plasmon-loss filtered images at 20 kV for graphene and silicon based on the mutual coherence approach. In addition, a new approximation for the mixed dynamic form factor is introduced. In our calculation multiple elastic scattering and one inelastic scattering are taken into account. The simulation shows that even the intensity of zero-loss filtered image is attenuated by the interference between inelastically scattered waves. Moreover, the intensity of plasmon-loss filtered images cannot be neglected, either.
authors.affiliation: Universität Ulm, Materialwissenschaftliche Elektronenmikroskopie, Albert-Einstein-Allee 11, 89081 Ulm, Germany. Electronic address: zhongbo.lee@uni-ulm.de.
authors.forename: Z
authors.initials: Z
authors.lastname: Lee
authors.forename: H
authors.initials: H
authors.lastname: Rose
authors.forename: R
authors.initials: R
authors.lastname: Hambach
authors.forename: P
authors.initials: P
authors.lastname: Wachsmuth
authors.forename: U
authors.initials: U
authors.lastname: Kaiser
mesh_terms: D003198:Computer Simulation; D055032:Electron Microscope Tomography / Q000379:methods*; D006108:Graphite / Q000737:chemistry*; D046032:Microscopy, Energy-Filtering Transmission Electron / Q000379:methods*; D012825:Silicon / Q000737:chemistry*
chemical_list: D006108:Graphite; D012825:Silicon
keywords: EFTEM; Inelastic scattering; Low voltage; Low-loss; Mutual coherence; Zero-loss