title: Structural characteristics of ternary In(x)Ga(1-x)As nanowires on Si (111) grown via Au-catalyzed VLS.
abstract: We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW array grown under optimized condition exceeds 1 x 10(8)/cm2. X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the In(x)Ga(1-x)As nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.
authors.affiliation: Photonic-Energy Center, Korea Photonics Technology and Institute, Gwangju 500-779, South Korea.
authors.forename: Jae Cheol
authors.initials: JC
authors.lastname: Shin
authors.forename: Do Yang
authors.initials: DY
authors.lastname: Kim
authors.forename: Jae Hyung
authors.initials: JH
authors.lastname: Park
authors.forename: Si Duck
authors.initials: SD
authors.lastname: Oh
authors.forename: Hang Ju
authors.initials: HJ
authors.lastname: Ko
authors.forename: Myung-Soo
authors.initials: MS
authors.lastname: Han
authors.forename: Jae Hun
authors.initials: JH
authors.lastname: Kim
authors.forename: Kyoung Jin
authors.initials: KJ
authors.lastname: Choi
authors.forename: Hyo Jin
authors.initials: HJ
authors.lastname: Kim
mesh_terms: D002384:Catalysis; D003460:Crystallization / Q000379:methods*; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D008968:Molecular Conformation; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D046911:Macromolecular Substances; D012825:Silicon