title: Effects of addition of Ta and Y ions to InZnO thin film transistors by sol-gel process.
abstract: We have investigated the effects of the addition of tantalum (Ta) and yttrium (Y) ions to InZnO thin film transistors (TFTs) using the sol-gel process. TaInZnO and YInZnO TFTs had significantly lower off current and higher on-to-off current ratio than InZnO TFTs. Ta and Y ions have strong affinity to oxygen and so suppress the formation of free electron carriers in thin films; they play an important role in enhancing the electrical characteristic due to their high oxygen bonding ability. The optimized TaInZnO and YInZnO TFTs showed high on/off ratio and low subthreshold swing.
authors.affiliation: Advanced Convergence Technology Center, Daegu Gyeongbuk Institue of Science and Technology (DGIST), 50-1 Sang-Ri, Hyeonpung-Myeon, Dalseong-Gun, Daegu 711-783, Republic of Korea.
authors.forename: Dae-Ho
authors.initials: DH
authors.lastname: Son
authors.forename: Dae-Hwan
authors.initials: DH
authors.lastname: Kim
authors.forename: Jung-Hye
authors.initials: JH
authors.lastname: Kim
authors.forename: Si-Nae
authors.initials: SN
authors.lastname: Park
authors.forename: Shi-Joon
authors.initials: SJ
authors.lastname: Sung
authors.forename: Jin-Kyu
authors.initials: JK
authors.lastname: Kang