title: High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire.
abstract: Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal-semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concentration of 3.6 × 1017 cm-3 and an electron mobility of 215.25 cm2 V-1 s-1. The photodetectors exhibit good photoconductive performance, excellent stability, reproducibility, superior responsivity (8.4 × 104 A W-1), and quantum efficiency (1.96 × 106%). These superior properties are attributed to the high surface-to-volume ratio and single-crystal 1D nanostructure of photodetectors that significantly reduce the scattering, trapping, and the transit time between the electrodes during the transport process. Furthermore, the M-S-M structure can effectively enhance space charge effect by the formation of the Schottky contacts, which significantly assists with the electron injection and photocurrent gain.
authors.affiliation: Department of Materials Science & Engineering, National Tsing Hua University, No, 101, Sec, 2, Kuang-Fu Rd, Hsinchu 30013, Taiwan. sjlin@mx.nthu.edu.tw.
authors.forename: Cheng-Hsiang
authors.initials: CH
authors.lastname: Kuo
authors.forename: Jyh-Ming
authors.initials: JM
authors.lastname: Wu
authors.forename: Su-Jien
authors.initials: SJ
authors.lastname: Lin
authors.forename: Wen-Chih
authors.initials: WC
authors.lastname: Chang