title: Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides.
abstract: Erbium-doped GaN (GaN:Er) epilayers were synthesized by metal organic chemical vapor deposition. GaN:Er waveguides were fabricated based on four different GaN:Er layer structures: GaN:Er/GaN/Al2O3, GaN:Er/GaN/AlN/Al2O3, GaN:Er/GaN/Al(0.75)Ga(0.25)N/AlN/Al2O3, and GaN/GaN:Er/GaN/Al2O3. Optical loss at 1.54 μm in these waveguide structures has been measured. It was found that the optical attenuation coefficient of the GaN:Er waveguide increases almost linearly with the GaN (002) x-ray rocking curve linewidth. The lowest measured loss was ~6 dB/cm.
authors.affiliation: Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA.
authors.forename: I-Wen
authors.initials: IW
authors.lastname: Feng
authors.forename: Weiping
authors.initials: W
authors.lastname: Zhao
authors.forename: Jing
authors.initials: J
authors.lastname: Li
authors.forename: Jingyu
authors.initials: J
authors.lastname: Lin
authors.forename: Hongxing
authors.initials: H
authors.lastname: Jiang
authors.forename: John
authors.initials: J
authors.lastname: Zavada