title: Electrostatic tuning of the proximity-induced exchange field in EuS/Al bilayers.
abstract: We demonstrate that the proximity-induced exchange field H(ex) in ferromagnetic-paramagnetic bilayers can be modulated with an electric field. An electrostatic gate arrangement is used to tune the magnitude of H(ex) in the Al component of EuS/Al bilayers. In samples with H(ex)~2 T, we were able to produce modulations of ±10 mT with the application of perpendicular electric fields of the order of ±10(6) V/cm. We discuss several possible mechanisms accounting for the electric field's influence on the interfacial coupling between the Al layer and the ferromagnetic insulator EuS, along with the prospects of producing a superconducting field-effect transistor.
authors.affiliation: Department of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803, USA.
authors.forename: T J
authors.initials: TJ
authors.lastname: Liu
authors.forename: J C
authors.initials: JC
authors.lastname: Prestigiacomo
authors.forename: P W
authors.initials: PW
authors.lastname: Adams