title: The memristive properties of a single VO2 nanowire with switching controlled by self-heating.
abstract: A two-terminal memristor memory based on a single VO2 nanowire is reported that can not only provide switchable resistances in a large range of about four orders of magnitude but can also maintain the resistances by a low bias voltage. The phase transition of the single VO2 nanowire was driven by the bias voltage of 0.34 V without using any heat source. The memristive behavior of the single VO2 nanowire was confirmed by observing the switching and non-volatile properties of resistances when voltage pulses and low bias voltage were applied, respectively. Furthermore, multiple retainable resistances in a large range of about four orders of magnitude can be utilized by controlling the number and the amount of voltage pulses under the low bias voltage. This is a key step towards the development of new low-power and two-terminal memory devices for next-generation non-volatile memories.
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul, 151-742, Korea.
authors.forename: Sung-Hwan
authors.initials: SH
authors.lastname: Bae
authors.forename: Sangmin
authors.initials: S
authors.lastname: Lee
authors.forename: Hyun
authors.initials: H
authors.lastname: Koo
authors.forename: Long
authors.initials: L
authors.lastname: Lin
authors.forename: Bong Hyun
authors.initials: BH
authors.lastname: Jo
authors.forename: Chan
authors.initials: C
authors.lastname: Park
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
keywords: memristor; metal-to-insulator transition; non-volatile memory device; resistive switching device; vanadium dioxide nanowire