title: Novel hybrid organic-inorganic spin-on resist for electron- or photon-based nanolithography with outstanding resistance to dry etching.
abstract: A new spin-on alumina-based resist exhibits excellent performance in terms of both achievable lateral resolution and etch resistance in fluorine-based non-cryo-cooled dry etching processes. The resist has selectivity greater than 100:1 with respect to the underlying silicon during the etching process, patternability with various lithographic tools (UV, X-rays, electron beam, and nanoimprint lithography), and positive and negative tone behavior depending only on the developer chemistry.
authors.affiliation: Industrial Engineering Department and INSTM, Via Marzolo 9, 35131, Padova, Italy.
authors.forename: Erika
authors.initials: E
authors.lastname: Zanchetta
authors.forename: Gioia Della
authors.initials: GD
authors.lastname: Giustina
authors.forename: Gianluca
authors.initials: G
authors.lastname: Grenci
authors.forename: Alessandro
authors.initials: A
authors.lastname: Pozzato
authors.forename: Massimo
authors.initials: M
authors.lastname: Tormen
authors.forename: Giovanna
authors.initials: G
authors.lastname: Brusatin
keywords: alumina; direct patterning; dry etching; etching masks; inorganic resists; sol-gel