title: Flexible thin-film transistors on plastic substrate at room temperature.
abstract: We have fabricated flexible thin-film transistors (TFTs) on plastic substrates using Aluminum-doped ZnO (AZO) as an active channel layer at room temperature. The AZO-TFTs showed n-channel device characteristics and operated in enhancement mode. The device shows a threshold voltage of 1.3 V, an on/off ratio of 2.7 x 10(7), a field effect mobility of 21.3 cm2/V x s, a subthreshold swing of 0.23 V/decade, and the off current of less than 10(-12) A at room temperature. Recently, the flexible displays have become a very hot topic. Flexible thin film transistors are key devices for realizing flexible displays. We have investigated AZO-TFT on flexible plastic substrate, and high performance flexible TFTs have been obtained.
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, PRC.
authors.forename: Dedong
authors.initials: D
authors.lastname: Han
authors.forename: Wei
authors.initials: W
authors.lastname: Wang
authors.forename: Jian
authors.initials: J
authors.lastname: Cai
authors.forename: Liangliang
authors.initials: L
authors.lastname: Wang
authors.forename: Yicheng
authors.initials: Y
authors.lastname: Ren
authors.forename: Yi
authors.initials: Y
authors.lastname: Wang
authors.forename: Shengdong
authors.initials: S
authors.lastname: Zhang
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D055119:Elastic Modulus; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053768:Metal Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D013696:Temperature; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*
chemical_list: D000535:Aluminum; D015034:Zinc Oxide