title: Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa₁-xN nanowire based light emitting diodes.
abstract: High crystal quality, vertically aligned AlxGa1-xN nanowire based double heterojunction light emitting diodes (LEDs) are grown on Si substrate by molecular beam epitaxy. Such AlxGa1-xN nanowires exhibit unique core-shell structures, which can significantly suppress surface nonradiative recombination. We successfully demonstrate highly efficient AlxGa1-xN nanowire array based LEDs operating at ∼340 nm. Such nanowire devices exhibit superior electrical and optical performance, including an internal quantum efficiency of ∼59% at room temperature, a relatively small series resistance, highly stable emission characteristics, and the absence of efficiency droop under pulsed biasing conditions.
authors.affiliation: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, H3A 0E9, Canada.
authors.forename: Q
authors.initials: Q
authors.lastname: Wang
authors.forename: A T
authors.initials: AT
authors.lastname: Connie
authors.forename: H P T
authors.initials: HP
authors.lastname: Nguyen
authors.forename: M G
authors.initials: MG
authors.lastname: Kibria
authors.forename: S
authors.initials: S
authors.lastname: Zhao
authors.forename: S
authors.initials: S
authors.lastname: Sharif
authors.forename: I
authors.initials: I
authors.lastname: Shih
authors.forename: Z
authors.initials: Z
authors.lastname: Mi