title: [Preparation and properties of P-type Cd1-xZn(x)Te thin films].
abstract: Cd1-xZnxTe:Cu Thin films were prepared by co-evaporation method. X-ray Fluorescence Spectrometry (XRF), scanning electron microscope(SEM), UV-Vis transmission spectra, thermal probe, four-probe method, step profiler and X-ray diffractometer (XRD) were used to investigate the composition, structure, morphology, optical and electrical properties of Cd1-x ZnxTe:Cu thin films with different doping concentration. The results show that the resistivity of 10% copper doped Cd1-x ZnxTe films increased several magnitude and the conductive type changed from p-type to n-type after annealing. The 20% cu-doped Cdl, Zn,Te films had not obvious change in conductive type and electrical resistivity after annealing and they exhibit good surface morphology. The transmissivity of 30% cu-doped Cd1-x, ZnxTe films decreased seriously below 10% after annealing, which indicate that they are not suitable to be the top cell materials in tandem structure. The 20% and 30% cu-doped Cd1-x Zn, Te films were both p-type conductivity.
authors.affiliation: College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China. lemonzhaoyu@foxmail.com
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhao
authors.forename: Hong-Chao
authors.initials: HC
authors.lastname: Jiang
authors.forename: Li-Li
authors.initials: LL
authors.lastname: Wu
authors.forename: Liang-Huan
authors.initials: LH
authors.lastname: Feng
authors.forename: Guang-Gen
authors.initials: GG
authors.lastname: Zeng
authors.forename: Wen-Wu
authors.initials: WW
authors.lastname: Wang
authors.forename: Jing-Quan
authors.initials: JQ
authors.lastname: Zhang
authors.forename: Wei
authors.initials: W
authors.lastname: Li