title: Flexoelectric effect in the reversal of self-polarization and associated changes in the electronic functional properties of BiFeO(3) thin films.
abstract: Flexoelectricity can play an important role in the reversal of the self-polarization direction in epitaxial BiFeO3 thin films. The flexoelectric and interfacial effects compete with each other to determine the self-polarization state. In Region I, the self-polarization is downward because the interfacial effect is more dominant than the flexoelectric effect. In Region II, the self-polarization is upward, because the flexoelectric effect becomes more dominant than the interfacial effect.
authors.affiliation: Center for Functional Interfaces of Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 151-747, Korea, Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Korea.
authors.forename: Byung Chul
authors.initials: BC
authors.lastname: Jeon
authors.forename: Daesu
authors.initials: D
authors.lastname: Lee
authors.forename: Myang Hwan
authors.initials: MH
authors.lastname: Lee
authors.forename: Sang Mo
authors.initials: SM
authors.lastname: Yang
authors.forename: Seung Chul
authors.initials: SC
authors.lastname: Chae
authors.forename: Tae Kwon
authors.initials: TK
authors.lastname: Song
authors.forename: Sang Don
authors.initials: SD
authors.lastname: Bu
authors.forename: Jin-Seok
authors.initials: JS
authors.lastname: Chung
authors.forename: Jong-Gul
authors.initials: JG
authors.lastname: Yoon
authors.forename: Tae Won
authors.initials: TW
authors.lastname: Noh
keywords: BiFeO3 film; flexoelectric effect; self-polarization; strain gradient