title: Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.
abstract: The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics.
authors.affiliation: Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films COSDAF, City University of Hong Kong, Hong Kong SAR.
authors.forename: Ye
authors.initials: Y
authors.lastname: Zhou
authors.forename: Su-Ting
authors.initials: ST
authors.lastname: Han
authors.forename: Prashant
authors.initials: P
authors.lastname: Sonar
authors.forename: V A L
authors.initials: VA
authors.lastname: Roy
mesh_terms: D016248:Computer Storage Devices; D004867:Equipment Design; D019544:Equipment Failure Analysis; D016247:Information Storage and Retrieval / Q000379:methods*; D008422:Materials Testing; D011108:Polymers / Q000737:chemistry*; D012666:Semiconductors; D055672:Static Electricity
chemical_list: D011108:Polymers
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