title: Field-effect transistors based on WS2 nanotubes with high current-carrying capacity.
abstract: We report the first transistor based on inorganic nanotubes exhibiting mobility values of up to 50 cm(2) V(-1) s(-1) for an individual WS2 nanotube. The current-carrying capacity of these nanotubes was surprisingly high with respect to other low-dimensional materials, with current density at least 2.4 × 10(8) A cm(-2). These results demonstrate that inorganic nanotubes are promising building blocks for high-performance electronic applications.
authors.affiliation: Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel.
authors.forename: Roi
authors.initials: R
authors.lastname: Levi
authors.forename: Ora
authors.initials: O
authors.lastname: Bitton
authors.forename: Gregory
authors.initials: G
authors.lastname: Leitus
authors.forename: Reshef
authors.initials: R
authors.lastname: Tenne
authors.forename: Ernesto
authors.initials: E
authors.lastname: Joselevich