title: Low-frequency 1/f noise in graphene devices.
abstract: Low-frequency noise with a spectral density that depends inversely on frequency has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to the development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its two-dimensional structure and widely tunable two-dimensional carrier concentration. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency noise in this material system. Here, the characteristic features of 1/f noise in graphene and few-layer graphene are reviewed, and the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors are examined.
authors.affiliation: Nano-Device Laboratory, Department of Electrical Engineering, Materials Science and Engineering Program, Bourns College of Engineering, University of California, Riverside, California 92521, USA. balandin@ee.ucr.edu
authors.forename: Alexander A
authors.initials: AA
authors.lastname: Balandin
references.citation: Nano Lett. 2008 Aug;8(8):2119-25
references.pmid: 18298094
references.citation: Phys Rev B Condens Matter. 1986 Apr 1;33(7):4898-4905
references.pmid: 9938959
references.citation: Nano Lett. 2008 Oct;8(10):3137-40
references.pmid: 18763832
references.citation: Science. 1995 Mar 24;267(5205):1837-9
references.pmid: 7892611
references.citation: Nat Mater. 2007 Sep;6(9):652-5
references.pmid: 17660825
references.citation: Phys Rev Lett. 2008 Apr 18;100(15):156801
references.pmid: 18518138
references.citation: ACS Nano. 2011 Mar 22;5(3):2075-81
references.pmid: 21332148
references.citation: Nano Lett. 2010 May 12;10(5):1864-8
references.pmid: 20373779
references.citation: Chem Rev. 2011 Nov 9;111(11):7315-54
references.pmid: 21899304
references.citation: Science. 1998 May 22;280(5367):1238-42
references.pmid: 9596572
references.citation: Phys Rev Lett. 2009 Mar 27;102(12):126805
references.pmid: 19392308
references.citation: Nano Lett. 2010 May 12;10(5):1563-7
references.pmid: 20373788
references.citation: Nano Lett. 2010 Nov 10;10(11):4590-4
references.pmid: 20939609
references.citation: Nat Nanotechnol. 2008 Aug;3(8):486-90
references.pmid: 18685636
references.citation: Nano Lett. 2012 May 9;12(5):2294-8
references.pmid: 22506589
references.citation: Phys Rev Lett. 2006 Jun 23;96(24):246802
references.pmid: 16907266
references.citation: Phys Rev B Condens Matter. 1986 Jul 15;34(2):773-777
references.pmid: 9939686
references.citation: Nano Lett. 2011 Mar 9;11(3):1093-7
references.pmid: 21271736
references.citation: Nat Mater. 2007 Mar;6(3):183-91
references.pmid: 17330084
references.citation: Nat Nanotechnol. 2010 Jul;5(7):487-96
references.pmid: 20512128
references.citation: Nano Lett. 2010 Sep 8;10(9):3312-7
references.pmid: 20684526
references.citation: J Phys Condens Matter. 2010 Oct 6;22(39):395302
references.pmid: 21403224
references.citation: ACS Nano. 2011 Oct 25;5(10):8124-30
references.pmid: 21913642