title: InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region.
abstract: We report on InP-based p-type/intrinsic/n-type (PIN) photodiodes with a novel strain-compensated type-II InGaAs/GaAsSb quantum well active region. The device has optical response out to 3.0 μm, specific detectivity (D*) of 7.73×10(9) cm Hz(0.5)/W at 290 K for 2.7 μm. These preliminary results show that this novel strain-compensated approach leads to similar performance when compared to a conventional strain-compensated approach.
authors.affiliation: Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22903, USA. bc4fm@virginia.edu
authors.forename: Baile
authors.initials: B
authors.lastname: Chen
authors.forename: Archie L
authors.initials: AL
authors.lastname: Holmes