title: Stress inversion from initial tensile to compressive side during ultrathin oxide growth of the Si(100) surface.
abstract: We report the real-time observation of the stress change during sub-nanometer oxide growth on the Si(100) surface. Oxidation initially induced a rapid buildup of tensile stress up to -1.9 × 10(8) N m(-2) with an oxide thickness of 0.25 nm, followed by gradual compensation by a compressive stress. The compressive stress saturated at 5 × 10(7) N m(-2) for an oxide thickness of 1.2 nm. The analysis, assisted by theoretical study, indicates that the observed initial tensile stress is caused by oxygen bridge-bonding between the Si dimers. Atomistic model calculations considering mutually orthogonal orientations of the Si(100) surface structure reproduce the stress inversion from the tensile to the compressive side.
authors.affiliation: Department of Applied Physics, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka 239-8686, Japan. kitajima@lxray.jp
authors.forename: Masahiro
authors.initials: M
authors.lastname: Kitajima
authors.forename: Tetsuya
authors.initials: T
authors.lastname: Narushima
authors.forename: Takayuki
authors.initials: T
authors.lastname: Kurashina
authors.forename: Akiko N
authors.initials: AN
authors.lastname: Itakura
authors.forename: Seiichi
authors.initials: S
authors.lastname: Takami
authors.forename: Aruba
authors.initials: A
authors.lastname: Yamada
authors.forename: Kazuo
authors.initials: K
authors.lastname: Teraishi
authors.forename: Akira
authors.initials: A
authors.lastname: Miyamoto
mesh_terms: D016880:Anisotropy; D019245:Compressive Strength; D003198:Computer Simulation; D003460:Crystallization / Q000379:methods*; D019281:Dimerization; D055119:Elastic Modulus; D008956:Models, Chemical; D008958:Models, Molecular; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D010087:Oxides / Q000737:chemistry*; D010316:Particle Size; D012825:Silicon / Q000737:chemistry*; D013314:Stress, Mechanical; D013499:Surface Properties; D013718:Tensile Strength
chemical_list: D010087:Oxides; D012825:Silicon