title: Kinase detection with gallium nitride based high electron mobility transistors.
abstract: A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.
authors.affiliation: Weldon School of Biomedical Engineering, Purdue University, West Lafayette, Indiana 47907, USA ; Indiana University School of Medicine, Indianapolis, Indiana 46202, USA.
authors.forename: Matthew S
authors.initials: MS
authors.lastname: Makowski
authors.forename: Isaac
authors.initials: I
authors.lastname: Bryan
authors.forename: Zlatko
authors.initials: Z
authors.lastname: Sitar
authors.forename: Consuelo
authors.initials: C
authors.lastname: Arellano
authors.forename: Jinqiao
authors.initials: J
authors.lastname: Xie
authors.forename: Ramon
authors.initials: R
authors.lastname: Collazo
authors.forename: Albena
authors.initials: A
authors.lastname: Ivanisevic
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