title: Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes.
abstract: A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays.
authors.affiliation: Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Xuyong
authors.initials: X
authors.lastname: Yang
authors.forename: Evren
authors.initials: E
authors.lastname: Mutlugun
authors.forename: Yongbiao
authors.initials: Y
authors.lastname: Zhao
authors.forename: Yuan
authors.initials: Y
authors.lastname: Gao
authors.forename: Kheng Swee
authors.initials: KS
authors.lastname: Leck
authors.forename: Yanyan
authors.initials: Y
authors.lastname: Ma
authors.forename: Lin
authors.initials: L
authors.lastname: Ke
authors.forename: Swee Tiam
authors.initials: ST
authors.lastname: Tan
authors.forename: Hilmi Volkan
authors.initials: HV
authors.lastname: Demir
authors.forename: Xiao Wei
authors.initials: XW
authors.lastname: Sun
keywords: interfacial layer; light-emitting diodes; nanoparticles; quantum dots; solution processing; tungsten oxide