title: Electric-field-dependent spin polarization in GdN spin filter tunnel junctions.
abstract: Tunnel junctions incorporating GdN ferromagnetic semiconductor barriers show a spin polarization exceeding 90% and a high conductance. These devices show an unusual low-bias conductance peak arising from a strong bias-dependence of the spin polarization. This originates from a strong magneto-electric coupling within a double Schottky barrier formed with the NbN electrodes.
authors.affiliation: Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK.
authors.forename: Avradeep
authors.initials: A
authors.lastname: Pal
authors.forename: K
authors.initials: K
authors.lastname: Senapati
authors.forename: Z H
authors.initials: ZH
authors.lastname: Barber
authors.forename: M G
authors.initials: MG
authors.lastname: Blamire
keywords: GdN; Spin filter; magneto-electric effects; tunnel junctions