title: Electroassisted transfer of vertical silicon wire arrays using a sacrificial porous silicon layer.
abstract: An electroassisted method is developed to transfer silicon (Si) wire arrays from the Si wafers on which they are grown to other substrates while maintaining their original properties and vertical alignment. First, electroassisted etching is used to form a sacrificial porous Si layer underneath the Si wires. Second, the porous Si layer is separated from the Si wafer by electropolishing, enabling the separation and transfer of the Si wires. The method is further expanded to develop a current-induced metal-assisted chemical etching technique for the facile and rapid synthesis of Si nanowires with axially modulated porosity.
authors.affiliation: Department of Mechanical Engineering, Stanford University , California 94305, United States.
authors.forename: Jeffrey M
authors.initials: JM
authors.lastname: Weisse
authors.forename: Chi Hwan
authors.initials: CH
authors.lastname: Lee
authors.forename: Dong Rip
authors.initials: DR
authors.lastname: Kim
authors.forename: Lili
authors.initials: L
authors.lastname: Cai
authors.forename: Pratap M
authors.initials: PM
authors.lastname: Rao
authors.forename: Xiaolin
authors.initials: X
authors.lastname: Zheng
mesh_terms: D003460:Crystallization; D004581:Electronics; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry*; D016062:Porosity; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D012825:Silicon