title: High-brightness diode laser arrays integrated with a phase shifter designed for single-lobe far-field pattern.
abstract: High-brightness, edge-emitting diode laser arrays integrated with a phase shifter have been designed and fabricated at a wavelength of about 910 nm. Stable out-of-phase mode is generated through coupling evanescently and converted to be nearly in-phase by the phase modulation from the phase shifter. With a very simple manufacture process, stable single-lobe far-field pattern is achieved in the slow axis when the continuous wave output power exceeds 460 mW/facet, and the divergence angle is only 2.7 times the diffraction-limited value. Such device shows a promising future for high-brightness application with low cost and easy fabrication.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Liu
authors.forename: Jianxin
authors.initials: J
authors.lastname: Zhang
authors.forename: Shaodong
authors.initials: S
authors.lastname: Ma
authors.forename: Aiyi
authors.initials: A
authors.lastname: Qi
authors.forename: Hongwei
authors.initials: H
authors.lastname: Qu
authors.forename: Yejin
authors.initials: Y
authors.lastname: Zhang
authors.forename: Wanhua
authors.initials: W
authors.lastname: Zheng