title: Guided VLS growth of epitaxial lateral Si nanowires.
abstract: Using the Au-seeded vapor-liquid-solid technique, epitaxial single-crystal Si nanowires (NWs) can be grown laterally along Si(111) substrates that have been miscut toward [112¯]. The ratio of lateral-to-vertical NWs increases as the miscut angle increases and as disilane pressure and substrate temperature decrease. By exploiting these trends, conditions can be identified whereby all of the deposited Au seeds form lateral NWs. Growth is guided along the nanofaceted substrate via a mechanism that involves pinning of the trijunction at the liquid/solid interface of the growing nanowire.
authors.affiliation: Materials Science and Engineering, School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287-6106, United States.
authors.forename: Somilkumar J
authors.initials: SJ
authors.lastname: Rathi
authors.forename: David J
authors.initials: DJ
authors.lastname: Smith
authors.forename: Jeff
authors.initials: J
authors.lastname: Drucker