title: Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors.
abstract: Effect of heat treatment in aluminium oxide (AlO(x)) preparation employing UV/ozone exposure of thermally-evaporated aluminium is reported. AlO(x) is combined with 1-octylphosphonic acid to form a gate dielectric in low-voltage organic thin-film transistors based on pentacene. For short UV/ozone exposure times the 100 degrees C-heating step that immediately follows UV/ozone oxidation of aluminium leads to a decrease in the transistor threshold voltage of up to 8% and - fourfold reduction in the gate dielectric current density. Transistors with AlO(x) prepared by 60-minute UV/ozone oxidation do not exhibit such behaviour. These results are explained in terms of reduced density of charged oxygen vacancies in the UV/ozone oxidized AlO(x).
authors.affiliation: Department of Electronic and Electrical Engineering, University of Strathclyde, 204 George Street, Glasgow G1 1XW, United Kingdom.
authors.forename: Krishna Chytanya
authors.initials: KC
authors.lastname: Chinnam
authors.forename: Helena
authors.initials: H
authors.lastname: Gleskova
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry* / Q000528:radiation effects; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006358:Hot Temperature; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000528:radiation effects; D010084:Oxidation-Reduction / Q000528:radiation effects; D010126:Ozone / Q000737:chemistry* / Q000528:radiation effects; D014173:Transistors, Electronic; D014466:Ultraviolet Rays
chemical_list: D010126:Ozone; D000537:Aluminum Oxide