title: Ultrathin hetero-nanowire-based flexible electronics with tunable conductivity.
abstract: Flexible hetero-nanowire electronics: A simple solution process has been developed for the first time to fabricate macroscopic flexible, ordered Au-Te hetero-nanowire film electronics with tunable resistance from MΩ to Ω at room temperature (see the Figure). Nanowire films with an electrical conductivity as low as 10,000 S cm(-1) and a sheet resistance of 15Ω sq(-1) can generate reliable interconnections for light-emitting diode (LED) arrays. The Au-Te hetero-nanowire films remain conductive after bending 6000 times with a maximum bending radius of 2.0 mm without any obvious degradation.
authors.affiliation: Division of Nanomaterials and Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui, 230026, PR China.
authors.forename: Jian-Wei
authors.initials: JW
authors.lastname: Liu
authors.forename: Wei-Ran
authors.initials: WR
authors.lastname: Huang
authors.forename: Ming
authors.initials: M
authors.lastname: Gong
authors.forename: Meng
authors.initials: M
authors.lastname: Zhang
authors.forename: Jin-Long
authors.initials: JL
authors.lastname: Wang
authors.forename: Jing
authors.initials: J
authors.lastname: Zheng
authors.forename: Shu-Hong
authors.initials: SH
authors.lastname: Yu
mesh_terms: D004553:Electric Conductivity; D055615:Electrical Equipment and Supplies; D006046:Gold / Q000737:chemistry; D055595:Mechanical Phenomena; D053770:Nanowires / Q000737:chemistry*; D013691:Tellurium / Q000737:chemistry
chemical_list: D006046:Gold; D013691:Tellurium
keywords: conductivity; flexible electronics; heteronanowires; nanowire films; self-assembly