title: Dually active silicon nanowire transistors and circuits with equal electron and hole transport.
abstract: We present novel multifunctional nanocircuits built from nanowire transistors that uniquely feature equal electron and hole conduction. Thereby, the mandatory requirement to yield energy efficient circuits with a single type of transistor is shown for the first time. Contrary to any transistor reported up to date, regardless of the technology and semiconductor materials employed, the dually active silicon nanowire channels shown here exhibit an ideal symmetry of current-voltage device characteristics for electron (n-type) and hole (p-type) conduction as evaluated in terms of comparable currents, turn-on threshold voltages, and switching slopes. The key enabler to symmetry is the selective tunability of the tunneling transmission of charge carriers as rendered by the combination of the nanometer-scale dimensions of the junctions and the application of radially compressive strain. To prove the advantage of this concept we integrated dually active transistors into cascadable and multifunctional one-dimensional circuit strings. The nanocircuits confirm energy efficient switching and can further be electrically configured to provide four different types of operation modes compared to a single one when employing conventional electronics with the same amount of transistors.
authors.affiliation: Chair for Nanoelectronic Materials, TU Dresden , Nöthnitzer Strasse 64, 01187 Dresden, Germany.
authors.forename: André
authors.initials: A
authors.lastname: Heinzig
authors.forename: Thomas
authors.initials: T
authors.lastname: Mikolajick
authors.forename: Jens
authors.initials: J
authors.lastname: Trommer
authors.forename: Daniel
authors.initials: D
authors.lastname: Grimm
authors.forename: Walter M
authors.initials: WM
authors.lastname: Weber