title: Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.
abstract: Correlated atom probe tomography, cross-sectional scanning transmission electron microscopy, and cathodoluminescence spectroscopy are used to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting diodes (LEDs). Tomographic analysis of the In distribution, interface morphology, and dopant clustering reveals material quality comparable to that of planar LED QWs. The position-dependent CL emission wavelength of the nonpolar side-facet QWs and semipolar top QWs is correlated with In composition.
authors.affiliation: Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.
authors.forename: James R
authors.initials: JR
authors.lastname: Riley
authors.forename: Sonal
authors.initials: S
authors.lastname: Padalkar
authors.forename: Qiming
authors.initials: Q
authors.lastname: Li
authors.forename: Ping
authors.initials: P
authors.lastname: Lu
authors.forename: Daniel D
authors.initials: DD
authors.lastname: Koleske
authors.forename: Jonathan J
authors.initials: JJ
authors.lastname: Wierer
authors.forename: George T
authors.initials: GT
authors.lastname: Wang
authors.forename: Lincoln J
authors.initials: LJ
authors.lastname: Lauhon
mesh_terms: D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry; D008027:Light; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium