title: Sericin for resistance switching device with multilevel nonvolatile memory.
abstract: Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10(6) have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Website: http://www.ntu.edu.sg/home/chenxd/
authors.forename: Hong
authors.initials: H
authors.lastname: Wang
authors.forename: Fanben
authors.initials: F
authors.lastname: Meng
authors.forename: Yurong
authors.initials: Y
authors.lastname: Cai
authors.forename: Liyan
authors.initials: L
authors.lastname: Zheng
authors.forename: Yuangang
authors.initials: Y
authors.lastname: Li
authors.forename: Yuanjun
authors.initials: Y
authors.lastname: Liu
authors.forename: Yueyue
authors.initials: Y
authors.lastname: Jiang
authors.forename: Xiaotian
authors.initials: X
authors.lastname: Wang
authors.forename: Xiaodong
authors.initials: X
authors.lastname: Chen
mesh_terms: D017097:Electric Impedance; D055615:Electrical Equipment and Supplies; D004563:Electrochemistry; D047030:Sericins / Q000737:chemistry*; D014867:Water / Q000737:chemistry
chemical_list: D047030:Sericins; D014867:Water
keywords: electronic device; multilevel memory; protein; resistance switching; sericin