title: Yellow luminescence of polar and nonpolar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition.
abstract: We have grown horizontal oriented, high growth rate, well-aligned polar (0001) single crystalline GaN nanowires and high-density and highly aligned GaN nonpolar (11-20) nanowires on r-plane substrates by metal organic chemical vapor deposition. It can be found that the polar nanowires showed a strong yellow luminescence (YL) intensity compared with the nonpolar nanowires. The different trends of the incorporation of carbon in the polar, nonpolar, and semipolar GaN associated with the atom bonding structure were discussed and proved by energy-dispersive X-ray spectroscopy, suggesting that C-involved defects are the origin responsible for the YL in GaN nanowires.
authors.affiliation: State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China. shengruixidian@126.com
authors.forename: Shengrui
authors.initials: S
authors.lastname: Xu
authors.forename: Yue
authors.initials: Y
authors.lastname: Hao
authors.forename: Jincheng
authors.initials: J
authors.lastname: Zhang
authors.forename: Teng
authors.initials: T
authors.lastname: Jiang
authors.forename: Linan
authors.initials: L
authors.lastname: Yang
authors.forename: Xiaoli
authors.initials: X
authors.lastname: Lu
authors.forename: Zhiyu
authors.initials: Z
authors.lastname: Lin