title: Arbitrary multicolor photodetection by hetero-integrated semiconductor nanostructures.
abstract: The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS and Si for visible light detection, and ZnO and III-nitrides for UV light detection. So far, none of the developed photodetector can achieve the multicolor detection with arbitrary spectral selectivity, high sensitivity, high speed, high signal-to-noise ratio, high stability, and simplicity (called 6S requirements). Here, we propose a universal strategy to develop multicolor photodetectors with arbitrary spectral selectivity by integrating various semiconductor nanostructures on a wide-bandgap semiconductor or an insulator substrate. Because the photoresponse of each spectral band is determined by each semiconductor nanostructure or the semiconductor substrate, multicolor detection satisfying 6S requirements can be readily satisfied by selecting the right semiconductors.
authors.affiliation: National Institute for Material Science, 1-1 Namiki, Tsukuba, Ibaraki, Japan.
authors.forename: Liwen
authors.initials: L
authors.lastname: Sang
authors.forename: Junqing
authors.initials: J
authors.lastname: Hu
authors.forename: Rujia
authors.initials: R
authors.lastname: Zou
authors.forename: Yasuo
authors.initials: Y
authors.lastname: Koide
authors.forename: Meiyong
authors.initials: M
authors.lastname: Liao
mesh_terms: D003116:Color; D003124:Colorimetry / Q000295:instrumentation*; D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D049329:Nanostructures / Q000737:chemistry* / Q000528:radiation effects; D036103:Nanotechnology / Q000295:instrumentation*; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D018511:Systems Integration
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