title: Self-integration of nanowires into circuits via guided growth.
abstract: The ability to assemble discrete nanowires (NWs) with nanoscale precision on a substrate is the key to their integration into circuits and other functional systems. We demonstrate a bottom-up approach for massively parallel deterministic assembly of discrete NWs based on surface-guided horizontal growth from nanopatterned catalyst. The guided growth and the catalyst nanopattern define the direction and length, and the position of each NW, respectively, both with unprecedented precision and yield, without the need for postgrowth assembly. We used these highly ordered NW arrays for the parallel production of hundreds of independently addressable single-NW field-effect transistors, showing up to 85% yield of working devices. Furthermore, we applied this approach for the integration of 14 discrete NWs into an electronic circuit operating as a three-bit address decoder. These results demonstrate the feasibility of massively parallel "self-integration" of NWs into electronic circuits and functional systems based on guided growth.
authors.affiliation: Department of Materials and Interfaces, Faculty of Chemistry and The Braun Center for Submicron Research, Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel.
authors.forename: Mark
authors.initials: M
authors.lastname: Schvartzman
authors.forename: David
authors.initials: D
authors.lastname: Tsivion
authors.forename: Diana
authors.initials: D
authors.lastname: Mahalu
authors.forename: Olga
authors.initials: O
authors.lastname: Raslin
authors.forename: Ernesto
authors.initials: E
authors.lastname: Joselevich
mesh_terms: D004560:Electricity; D036103:Nanotechnology / Q000379:methods*; D053770:Nanowires / Q000737:chemistry*; D012666:Semiconductors / Q000639:trends*
keywords: 1D nanostructures; nanoelectronics; nanolithography; nanotechnology; self-assembly
references.citation: Nanotechnology. 2010 Aug 27;21(34):345604
references.pmid: 20683137
references.citation: Nat Mater. 2007 Nov;6(11):841-50
references.pmid: 17972939
references.citation: Proc Natl Acad Sci U S A. 2005 Jul 19;102(29):10046-51
references.pmid: 16006507
references.citation: J Am Chem Soc. 2005 Aug 31;127(34):11942-3
references.pmid: 16117524
references.citation: Nano Lett. 2010 Mar 10;10(3):1050-4
references.pmid: 20178355
references.citation: Science. 2001 Jan 26;291(5504):630-3
references.pmid: 11158671
references.citation: Nat Nanotechnol. 2011 Aug 21;6(9):568-72
references.pmid: 21857684
references.citation: Nat Nanotechnol. 2011 Dec 18;7(3):191-6
references.pmid: 22179570
references.citation: Nat Nanotechnol. 2010 Jul;5(7):525-30
references.pmid: 20526324
references.citation: ACS Nano. 2012 Jul 24;6(7):6433-45
references.pmid: 22725665
references.citation: Nano Lett. 2009 Oct;9(10):3629-34
references.pmid: 19722536
references.citation: Science. 2001 Feb 2;291(5505):851-3
references.pmid: 11157160
references.citation: Science. 2011 Aug 19;333(6045):1003-7
references.pmid: 21852496
references.citation: Nat Nanotechnol. 2007 Jun;2(6):372-7
references.pmid: 18654310
references.citation: MRS Bull. 2011 Dec 1;36(12):1052-1063
references.pmid: 22707850
references.citation: Nat Nanotechnol. 2013 May;8(5):329-35
references.pmid: 23603986
references.citation: Nano Lett. 2008 Jan;8(1):20-5
references.pmid: 17696563
references.citation: Nano Lett. 2008 Dec;8(12):4421-7
references.pmid: 19367971
references.citation: Nature. 2006 Mar 2;440(7080):69-71
references.pmid: 16452928
references.citation: Science. 2003 Nov 21;302(5649):1377-9
references.pmid: 14631034