title: Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning.
abstract: Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.
authors.affiliation: Laboratory of Structural Steel, Functional Materials and Heat Treatment Processing Technology, Beijing Institute of Aeronautical Materials, Beijing 100095, China. liuy431@gmail.com
authors.forename: Yong
authors.initials: Y
authors.lastname: Liu
authors.forename: Jinle
authors.initials: J
authors.lastname: Lan
authors.forename: Wei
authors.initials: W
authors.lastname: Xu
authors.forename: Yaochun
authors.initials: Y
authors.lastname: Liu
authors.forename: Yan-Ling
authors.initials: YL
authors.lastname: Pei
authors.forename: Bo
authors.initials: B
authors.lastname: Cheng
authors.forename: Da-Bo
authors.initials: DB
authors.lastname: Liu
authors.forename: Yuan-Hua
authors.initials: YH
authors.lastname: Lin
authors.forename: Li-Dong
authors.initials: LD
authors.lastname: Zhao