High-performance nonvolatile Al/AlO(x)/CdTe:Sb nanowire memory device.
Here we demonstrate a room temperature processed nonvolatile memory device based on an Al/AlO(x)/CdTe:Sb nanowire (NW) heterojunction. Electrical analysis shows an echelon hysteresis composed of a high-resistance state (HRS) and a low-resistance state (LRS), which can allow it to write and erase data from the device. The conductance ratio is as high as 10⁶, with a retention time of 3 × 10⁴ s. Moreover, the SET voltages ranged from +6 to +8 V, whilst the RESET voltage ∼0 V. In addition, flexible memory nano-devices on PET substrate with comparable switching performance at bending condition were fabricated. XPS analysis of the Al/AlO(x)/CdTe:Sb NW heterojunction after controlled Ar⁺ bombardment reveals that this memory behavior is associated with the presence of ultra-thin AlO(x) film. This Al/AlO(x)/CdTe:Sb NW heterojunction will open up opportunities for new memory devices with different configurations.
School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China.
Chao
C
Xie
Biao
B
Nie
Long
L
Zhu
Long-Hui
LH
Zeng
Yong-Qiang
YQ
Yu
Xian-He
XH
Wang
Qun-Ling
QL
Fang
Lin-Bao
LB
Luo
Yu-Cheng
YC
Wu