Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography.
This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si0.4Ge0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range.
Institute of Materials Science and Engineering, National Central University, No, 300, Jhongda Rd,, Jhongli 32001, Taoyuan, Taiwan. swlee@ncu.edu.tw.
Hung-Tai
HT
Chang
Bo-Lun
BL
Wu
Shao-Liang
SL
Cheng
Tu
T
Lee
Sheng-Wei
SW
Lee