Experimental setup for investigating silicon solid phase crystallization at high temperatures.
An experimental setup is presented to measure and interpret the solid phase crystallization of amorphous silicon thin films on glass at very high temperatures of about 800 °C. Molybdenum-SiO(2)-silicon film stacks were irradiated by a diode laser with a well-shaped top hat profile. From the relevant thermal and optical parameters of the system the temperature evolution can be calculated accurately. A time evolution of the laser power was applied which leads to a temperature constant in time in the center of the sample. Such a process will allow the observation and interpretation of solid phase crystallization in terms of nucleation and growth in further work.
Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, Germany. thomas.schmidt@ipht-jena.de
Thomas
T
Schmidt
Annett
A
Gawlik
Henrik
H
Schneidewind
Andreas
A
Ihring
Gudrun
G
Andrä
Fritz
F
Falk
D003461:Crystallography / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006361:Heating / Q000295:instrumentation*; D007834:Lasers; D044367:Phase Transition; D012031:Refractometry / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*
D012825:Silicon