Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.
We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).
School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA 30332, USA.
Qing
Q
Li
Ali A
AA
Eftekhar
Majid
M
Sodagar
Zhixuan
Z
Xia
Amir H
AH
Atabaki
Ali
A
Adibi
D017076:Computer-Aided Design; D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D008904:Miniaturization; D012825:Silicon / Q000737:chemistry*; D017655:Silicon Compounds / Q000737:chemistry* / Q000528:radiation effects*; D013685:Telecommunications / Q000295:instrumentation*; D014159:Transducers
D017655:Silicon Compounds; C032734:silicon nitride; D012825:Silicon