Composite structure of SiO2@AgNPs@p-SiNWs for enhanced broadband optical antireflection.
The composite structure of SiO(2)@AgNPs@p-SiNWs based on silicon nanowires (SiNWs) produced by metal-assisted chemical etching (MaCE) method has been designed to realize the significant reflection suppression over a broad wavelength range (300 - 2500 nm). Especially, the reflectivity of the structure even below 0.3% at a wide range of 620 - 1950 nm can be achieved. It also has been demonstrated that SiO(2) capers play a dominant role in the significant reflection suppression of the composite structure.
Department of Physics & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
Ren
R
Lu
Yewu
Y
Wang
Lin
L
Gu
Wei
W
Wang
Yanjun
Y
Fang
Jian
J
Sha
D007909:Lenses; D008027:Light; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D012834:Silver / Q000737:chemistry*; D013499:Surface Properties
D012834:Silver; D012822:Silicon Dioxide; D012825:Silicon