Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2.
We report electronic transport measurements of devices based on monolayers and bilayers of the transition-metal dichalcogenide MoS2. Through a combination of in situ vacuum annealing and electrostatic gating we obtained ohmic contact to the MoS2 down to 4 K at high carrier densities. At lower carrier densities, low-temperature four probe transport measurements show a metal-insulator transition in both monolayer and bilayer samples. In the metallic regime, the high-temperature behavior of the mobility showed strong temperature dependence consistent with phonon-dominated transport. At low temperature, intrinsic field-effect mobilities approaching 1000 cm(2)/(V·s) were observed for both monolayer and bilayer devices. Mobilities extracted from Hall effect measurements were several times lower and showed a strong dependence on density, likely caused by screening of charged impurity scattering at higher densities.
Department of Physics, Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
Britton W H
BW
Baugher
Hugh O H
HO
Churchill
Yafang
Y
Yang
Pablo
P
Jarillo-Herrero
D004579:Electron Transport; D008670:Metals / Q000737:chemistry; D008982:Molybdenum / Q000737:chemistry*; D044967:Serum / Q000737:chemistry*; D013696:Temperature
D008670:Metals; D008982:Molybdenum