Tunable electroluminescence in planar graphene/SiO(2) memristors.
Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.
Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Congli
C
He
Jiafang
J
Li
Xing
X
Wu
Peng
P
Chen
Jing
J
Zhao
Kuibo
K
Yin
Meng
M
Cheng
Wei
W
Yang
Guibai
G
Xie
Duoming
D
Wang
Donghua
D
Liu
Rong
R
Yang
Dongxia
D
Shi
Zhiyuan
Z
Li
Litao
L
Sun
Guangyu
G
Zhang
Si nanocrystals; electroluminescence; graphene/SiO2 nanogap devices; memristor