Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals.
A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast and moderately sensitive detector capable to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonstrated at frequencies up to 4.9 THz. The THz detection time constant is shorter than 30 ps, the optical time constant is 150 ps. This detector is ideally suited for precise, simultaneous resolution of optical and THz pulses and for pulse characterization of high-power THz pulses up to tens of kW peak power levels. The dynamic range of the detector is as large as 65±3dB/Hz, enabling applications in a large variety of experiments and setups, also including table-top systems.
Univ. of Erlangen-Nuremberg, Germany. sascha.preu@physik.uni-erlangen.de
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Preu
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Mittendorff
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Winnerl
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Lu
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Gossard
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Weber
D004867:Equipment Design; D019544:Equipment Failure Analysis; D010783:Photometry / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D055053:Terahertz Radiation; D014159:Transducers; D014173:Transistors, Electronic