Crossover from photodarkening to photobleaching in a-Ge(x)Se(100-x) thin films.
In this Letter, we present the interesting results of photodarkening (PD), transition toward photostability, and a slow crossover from PD to photobleaching when composition of the chalcogenide glassy thin film changes from Ge-deficient to rich. A subsequent Raman analysis on these as-prepared and irradiated samples provide the direct evidence of photoinduced structural rearrangement, i.e., photocrystallization of Se and the removal of edge-sharing GeSe4 tetrahedra. Further, our experimental results clearly demonstrate that light-induced effects can be effectively controlled by choosing the right composition and provide valuable information on synthesizing photostable/sensitive glasses.
Indian Institute of Science Education & Research, Bhopal, India.
Rakesh Ranjan
RR
Kumar
A R
AR
Barik
E M
EM
Vinod
Mukund
M
Bapna
K S
KS
Sangunni
K V
KV
Adarsh