Direct measurement of band edge discontinuity in individual core-shell nanowires by photocurrent spectroscopy.
Group III-V coaxial core-shell semiconducting nanowire heterostructures possess unique advantages over their planar counterparts in logic, photovoltaic, and light-emitting devices. Dimensional confinement of electronic carriers and interface complexity in nanowires are known to produce local electronic potential landscapes along the radial direction that deviate from those along the normal to planar heterojunction interfaces. However, understanding of selected electronic and optoelectronic carrier transport properties and device characteristics remains lacking without a direct measurement of band alignment in individual nanowires. Here, we report on, in the GaAs/AlxGa1-xAs and GaAs/AlAs core-shell nanowire systems, how photocurrent and photoluminescence spectroscopies can be used together to construct a band diagram of an individual heterostructure nanowire with high spectral resolution, enabling quantification of conduction band offsets.
Department of Materials Science and Engineering, Drexel University , Philadelphia, Pennsylvania, United States.
Guannan
G
Chen
Guan
G
Sun
Yujie J
YJ
Ding
Paola
P
Prete
Ilio
I
Miccoli
Nico
N
Lovergine
Hadas
H
Shtrikman
Patrick
P
Kung
Tsachi
T
Livneh
Jonathan E
JE
Spanier
D000535:Aluminum / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D005708:Gallium / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D055095:Optics and Photonics; D012666:Semiconductors; D013057:Spectrum Analysis
D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum