Bulk optical absorption of high resistivity silicon at 1550 nm.
We report on the measurement of the optical absorption of bulk crystalline silicon at 1550 nm. Using the photodeflection technique, absorption as low as 5 ppm/cm has been measured on a sample with a resistivity of 10 kΩ·cm. The absorption as a function of the resistivity has been derived for n-type silicon.
Laboratoire des Matériaux Avancés, IN2P3/CNRS, Université de Lyon, Villeurbanne, France. j.degallaix@lma.in2p3.fr
Jerome
J
Degallaix
Raffaele
R
Flaminio
Danièle
D
Forest
Massimo
M
Granata
Christophe
C
Michel
Laurent
L
Pinard
Teddy
T
Bertrand
Gianpietro
G
Cagnoli