Multimode resistive switching in single ZnO nanoisland system.
Resistive memory has attracted a great deal of attention as an alternative to contemporary flash memory. Here we demonstrate an interesting phenomenon that multimode resistive switching, i.e. threshold-like, self-rectifying and ordinary bipolar switching, can be observed in one self-assembled single-crystalline ZnO nanoisland with base diameter and height ranging around 30 and 40 nm on Si at different levels of current compliance. Current-voltage characteristics, conductive atomic force microscopy (C-AFM), and piezoresponse force microscopy results show that the threshold-like and self-rectifying types of switching are controlled by the movement of oxygen vacancies in ZnO nanoisland between the C-AFM tip and Si substrate while ordinary bipolar switching is controlled by formation and rupture of conducting nano-filaments. Threshold-like switching leads to a very small switching power density of 1 × 10(3) W/cm(2).
Key Laboratory for Magnetism and Magnetic Materials of MOE, Department of Physics, School of Physical Science and Technology, Lanzhou University, Lanzhou, China. qijing@lzu.edu.cn
Jing
J
Qi
Mario
M
Olmedo
Jian-Guo
JG
Zheng
Jianlin
J
Liu
D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*; D015034:Zinc Oxide / Q000737:chemistry*
D015034:Zinc Oxide