Highly stable photoelectrochemical water splitting and hydrogen generation using a double-band InGaN/GaN core/shell nanowire photoanode.
We report on the first demonstration of stable photoelectrochemical water splitting and hydrogen generation on a double-band photoanode in acidic solution (hydrogen bromide), which is achieved by InGaN/GaN core/shell nanowire arrays grown on Si substrate using catalyst-free molecular beam epitaxy. The nanowires are doped n-type using Si to reduce the surface depletion region and increase current conduction. Relatively high incident-photon-to-current-conversion efficiency (up to ~27%) is measured under ultraviolet and visible light irradiation. Under simulated sunlight illumination, steady evolution of molecular hydrogen is further demonstrated.
Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
B
B
AlOtaibi
H P T
HP
Nguyen
S
S
Zhao
M G
MG
Kibria
S
S
Fan
Z
Z
Mi
D004563:Electrochemistry; D005708:Gallium / Q000737:chemistry; D018054:Hydrobromic Acid / Q000737:chemistry; D053770:Nanowires / Q000737:chemistry*; D009584:Nitrogen / Q000737:chemistry*; D055095:Optics and Photonics; D012825:Silicon / Q000737:chemistry; D012993:Solar Energy
D018054:Hydrobromic Acid; D005708:Gallium; D009584:Nitrogen; D012825:Silicon