Sensing extremely limited H₂ contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor.
A palladium (Pd) nanogap-based thin-film has been connected to an electrically stable amorphous InGaZnO thin-film transistor, to form a hydrogen sensor demonstrating a dramatic sensing capability. As a result of the Pd connection to the transistor source, our sensor circuit greatly enhances the hydrogen-induced signal and sensing speed in the sense of output voltage, clearly resolving a minimum hydrogen content of 0.05%. When the nanogap-based Pd thin-film was connected to the transistor gate, an extremely limited hydrogen content of even less than 0.05% was visibly detected through gate voltage shifts. Our results exhibit the most promising and practical ways to sense extremely limited hydrogen contents, originating from two methods: transistor-to-Pd nanogap resistor and transistor-to-Pd nanogap capacitor coupling.
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea. semicon@yonsei.ac.kr.
Young Tack
YT
Lee
Hwaebong
H
Jung
Seung Hee
SH
Nam
Pyo Jin
PJ
Jeon
Jin Sung
JS
Kim
Byungjin
B
Jang
Wooyoung
W
Lee
Seongil
S
Im
D055664:Electrochemical Techniques; D005708:Gallium / Q000737:chemistry*; D006859:Hydrogen / Q000032:analysis*; D007204:Indium / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D010165:Palladium / Q000737:chemistry*; D014173:Transistors, Electronic; D015032:Zinc / Q000737:chemistry*
D010087:Oxides; D007204:Indium; D010165:Palladium; D006859:Hydrogen; D005708:Gallium; D015032:Zinc