Fractional diffusion in silicon.
Microscopic processes leading to ultrafast laser-induced melting of silicon are investigated by large-scale ab initio molecular dynamics simulations. Before becoming a liquid, the atoms are shown to be fractionally diffusive, which is a property that has so far been observed in crowded fluids consisting of large molecules. Here, it is found to occur in an elemental semiconductor.
Theoretical Physics and Center for Interdisciplinary, Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str. 40, 34132, Kassel, Germany.
Eeuwe S
ES
Zijlstra
Alan
A
Kalitsov
Tobias
T
Zier
Martin E
ME
Garcia
density functional theory; fractional diffusion; molecular dynamics simulations; semiconductors; ultrafast melting