High Q SiC microresonators.
We demonstrate photonic devices based on standard 3C SiC epitaxially grown on silicon. We achieve high optical confinement by taking advantage of the high stiffness of SiC and undercutting the underlying silicon substrate. We demonstrate a 20 μm radius suspended microring resonator with Q=14,100 fabricated on commercially available SiC-on-silicon substrates.
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Jaime
J
Cardenas
Mian
M
Zhang
Christopher T
CT
Phare
Shreyas Y
SY
Shah
Carl B
CB
Poitras
Biswajeet
B
Guha
Michal
M
Lipson
D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D008904:Miniaturization; D017655:Silicon Compounds / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*; D014159:Transducers
D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; C022088:silicon carbide