Improved sinusoidal gating with balanced InGaAs/InP Single Photon Avalanche Diodes.
We report balanced InGaAs/InP single photon avalanche diodes (SPADs) operated in sinusoidal gating mode with a tunable phase shifter to reduce common mode noise. This technique enables detection of small avalanche pulses, which results in reduced afterpulsing. For laser repletion rate of 20 MHz at 240 K, the dark count rate for photon detection efficiency of 10% is 8.9 kHz.
Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA.
Zhiwen
Z
Lu
Wenlu
W
Sun
Qiugui
Q
Zhou
Joe
J
Campbell
Xudong
X
Jiang
Mark A
MA
Itzler
D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D010720:Phosphines / Q000737:chemistry*; D010783:Photometry / Q000295:instrumentation*; D012031:Refractometry / Q000295:instrumentation*; D012666:Semiconductors
D001152:Arsenicals; D010720:Phosphines; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide; C090882:indium phosphide