Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality.
In this Letter, a design for a tapered InAs/InGaAs quantum dot semiconductor optical amplifier is proposed and experimentally evaluated. The amplifier's geometry was optimized in order to reduce gain saturation effects and improve gain efficiency and beam quality. The experimental measurements confirm that the proposed amplifier allows for an elevated optical gain in the saturation regime, whereas a five-fold increase in the coupling efficiency to a standard single mode optical fiber is observed, due to the improvement in the beam quality factor M² of the emitted beam.
National and Kapodistrian University of Athens, Department Informatics and Telecommunications, Athens, Greece. cmesar@di.uoa.gr
Charis
C
Mesaritakis
Alexandros
A
Kapsalis
Hercules
H
Simos
Christos
C
Simos
Michel
M
Krakowski
Igor
I
Krestnikov
Dimitris
D
Syvridis