Local bandgap control of germanium by silicon nitride stressor.
We have proposed a new approach to tune the operation wavelength of Franz-Keldysh Ge electro-absorption modulation in Si photonics by controlling the local strain environment to cover the whole range of C + L bands (1.53 - 1.62 μm). The present paper shows a proof of strain-tuning modulator concept by the shift of the Ge absorption edge using SiN(x) stressor films and Franz-Keldysh effect in strain-controlled Ge.
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan.
R
R
Kuroyanagi
L M
LM
Nguyen
T
T
Tsuchizawa
Y
Y
Ishikawa
K
K
Yamada
K
K
Wada
D055119:Elastic Modulus; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005857:Germanium / Q000737:chemistry*; D008027:Light; D012031:Refractometry / Q000295:instrumentation*; D012542:Scattering, Radiation; D012666:Semiconductors; D017655:Silicon Compounds / Q000737:chemistry*; D013314:Stress, Mechanical
D017655:Silicon Compounds; D005857:Germanium; C032734:silicon nitride