Size-controlled InGaN/GaN nanorod array fabrication and optical characterization.
We demonstrate a cost-effective top-down approach for fabricating InGaN/GaN nanorod arrays using a wet treatment process in a KOH solution. The average diameter of the as-etched nanorods was effectively reduced from 420 nm to 180 nm. The spatial strain distribution was then investigated by measuring the high-resolution cathodoluminescence directly on top of the nanorods. The smaller nanorods showed a higher internal quantum efficiency and lower potential fluctuation, which can subsequently be exploited for high-efficiency photonic devices.
School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheondan-gwagiro, Buk-gu, Gwangju 500-712, South Korea.
Si-Young
SY
Bae
Duk-Jo
DJ
Kong
Jun-Yeob
JY
Lee
Dong-Ju
DJ
Seo
Dong-Seon
DS
Lee
D001718:Birefringence; D003460:Crystallization / Q000379:methods*; D055119:Elastic Modulus; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008027:Light; D008422:Materials Testing; D043942:Nanotubes / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size
D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride