Quantum corrections crossover and ferromagnetism in magnetic topological insulators.
Revelation of emerging exotic states of topological insulators (TIs) for future quantum computing applications relies on breaking time-reversal symmetry and opening a surface energy gap. Here, we report on the transport response of Bi2Te3 TI thin films in the presence of varying Cr dopants. By tracking the magnetoconductance (MC) in a low doping regime we observed a progressive crossover from weak antilocalization (WAL) to weak localization (WL) as the Cr concentration increases. In a high doping regime, however, increasing Cr concentration yields a monotonically enhanced anomalous Hall effect (AHE) accompanied by an increasing carrier density. Our results demonstrate a possibility of manipulating bulk ferromagnetism and quantum transport in magnetic TI, thus providing an alternative way for experimentally realizing exotic quantum states required by spintronic applications.
State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
Lihong
L
Bao
Weiyi
W
Wang
Nicholas
N
Meyer
Yanwen
Y
Liu
Cheng
C
Zhang
Kai
K
Wang
Ping
P
Ai
Faxian
F
Xiu
D004553:Electric Conductivity; D060526:Magnetic Fields; D008422:Materials Testing; D008567:Membranes, Artificial; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D011789:Quantum Theory
D008567:Membranes, Artificial