A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures.
Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.
International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, Japan. SANG.Liwen@nims.go.jp
Liwen
L
Sang
Meiyong
M
Liao
Masatomo
M
Sumiya
D004867:Equipment Design; D019544:Equipment Failure Analysis; D008567:Membranes, Artificial; D053758:Nanoparticles / Q000737:chemistry* / Q000528:radiation effects*; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D014466:Ultraviolet Rays
D008567:Membranes, Artificial