title: Direct growth of graphene film on germanium substrate.
abstract: Graphene has been predicted to play a role in post-silicon electronics due to the extraordinary carrier mobility. Chemical vapor deposition of graphene on transition metals has been considered as a major step towards commercial realization of graphene. However, fabrication based on transition metals involves an inevitable transfer step which can be as complicated as the deposition of graphene itself. By ambient-pressure chemical vapor deposition, we demonstrate large-scale and uniform depositon of high-quality graphene directly on a Ge substrate which is wafer scale and has been considered to replace conventional Si for the next generation of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs). The immiscible Ge-C system under equilibrium conditions dictates graphene depositon on Ge via a self-limiting and surface-mediated process rather than a precipitation process as observed from other metals with high carbon solubility. Our technique is compatible with modern microelectronics technology thus allowing integration with high-volume production of complementary metal-oxide-semiconductors (CMOS).
authors: Sate Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors: Gang
authors: G
authors: Wang
authors: Miao
authors: M
authors: Zhang
authors: Yun
authors: Y
authors: Zhu
authors: Guqiao
authors: G
authors: Ding
authors: Da
authors: D
authors: Jiang
authors: Qinglei
authors: Q
authors: Guo
authors: Su
authors: S
authors: Liu
authors: Xiaoming
authors: X
authors: Xie
authors: Paul K
authors: PK
authors: Chu
authors: Zengfeng
authors: Z
authors: Di
authors: Xi
authors: X
authors: Wang
mesh_terms: D000327:Adsorption; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D005857:Germanium / Q000737:chemistry*; D006108:Graphite / Q000737:chemistry*; D008422:Materials Testing; D008567:Membranes, Artificial; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D013499:Surface Properties
chemical_list: D008567:Membranes, Artificial; D005857:Germanium; D006108:Graphite
references: Nano Lett. 2008 Dec;8(12):4469-76
references: 19367973
references: Nano Lett. 2009 Sep;9(9):3318-22
references: 19637913
references: Nat Mater. 2007 Sep;6(9):652-5
references: 17660825
references: ACS Nano. 2011 Oct 25;5(10):8241-7
references: 21888426
references: Science. 2007 Jan 26;315(5811):490-3
references: 17255506
references: Science. 2010 Feb 5;327(5966):662
references: 20133565
references: Science. 2012 Jun 1;336(6085):1140-3
references: 22604723
references: Science. 2008 Jun 6;320(5881):1308
references: 18388259
references: Nat Mater. 2007 Mar;6(3):183-91
references: 17330084
references: Nano Lett. 2008 Jan;8(1):173-7
references: 18085811
references: Nat Mater. 2007 Nov;6(11):810-2
references: 17972935
references: Nature. 2009 Feb 5;457(7230):706-10
references: 19145232
references: Science. 2004 Oct 22;306(5696):666-9
references: 15499015
references: Nature. 2012 Oct 11;490(7419):192-200
references: 23060189
references: ACS Nano. 2012 Dec 21;6(12):10581-9
references: 23157621
references: J Am Chem Soc. 2011 Nov 9;133(44):17548-51
references: 21988639
references: Adv Mater. 2010 Oct 1;22(37):4140-5
references: 20730812
references: Nano Lett. 2009 Jan;9(1):30-5
references: 19046078
references: Nat Nanotechnol. 2010 Aug;5(8):574-8
references: 20562870
references: Nat Commun. 2011 Nov 01;2:522
references: 22045001
references: Science. 2006 May 26;312(5777):1191-6
references: 16614173
references: Phys Rev Lett. 2006 Nov 3;97(18):187401
references: 17155573
references: Angew Chem Int Ed Engl. 2008;47(16):2990-2
references: 18330884
references: Nat Nanotechnol. 2009 Apr;4(4):217-24
references: 19350030
references: Nano Lett. 2008 May;8(5):1399-403
references: 18402478
references: Science. 2009 Jun 5;324(5932):1312-4
references: 19423775