title: Energy transfer from luminescent centers to Er3+ in erbium-doped silicon-rich oxide films.
abstract: The energy transfer mechanism between luminescent centers (LCs) and Er3+ in erbium-doped silicon-rich oxide (SROEr) films prepared by electron beam evaporation is investigated. Intense photoluminescence of the LCs (weak oxygen bonds, neutral oxygen vacancies, and Si=O states) within the active matrixes is obtained. Fast energy transfer from Si=O states to Er3+ takes advantage in the SROEr film and enhances the light emission from Er3+. The introduction of Si nanoclusters, which induces the Si=O states and facilitates the photon absorption of the Si=O states, is essential to obtain intense photoluminescence from both Si=O states and Er3+.
authors: State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China. mselds@zju.edu.cn.
authors: Lu
authors: L
authors: Jin
authors: Dongsheng
authors: D
authors: Li
authors: Luelue
authors: L
authors: Xiang
authors: Feng
authors: F
authors: Wang
authors: Deren
authors: D
authors: Yang
authors: Duanlin
authors: D
authors: Que
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