title: Scanning angle Raman spectroscopy of poly(3-hexylthiophene)-based films on indium tin oxide, gold, and sapphire surfaces.
abstract: Interest in realizing conjugated polymer-based films with controlled morphology for efficient electronic devices, including photovoltaics, requires a parallel effort to characterize these films. Scanning angle (SA) Raman spectroscopy is applied to measure poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)-blend morphology on sapphire, gold, and indium tin oxide interfaces, including functional organic photovoltaic devices. Nonresonant SA Raman spectra are collected in seconds with signal-to-noise ratios that exceed 80, which is possible due to the reproducible SA signal enhancement. Raman spectra are collected as the incident angle of the 785 nm excitation laser is precisely varied upon a prism/sample interface from approximately 35 to 70°. The width of the ∼1447 cm(-1) thiophene C═C stretch is sensitive to P3HT order, and polymer order varied depending on the underlying substrate. This demonstrates the importance of performing the spectroscopic measurements on substrates and configurations used in the functioning devices, which is not a common practice. The experimental measurements are modeled with calculations of the interfacial mean square electric field to determine the distance dependence of the SA Raman signal. SA Raman spectroscopy is a versatile method applicable whenever the chemical composition, structure, and thickness of interfacial polymer layers need to be simultaneously measured.
authors: Ames Laboratory, U.S. Department of Energy , Ames, Iowa 50011-3111, United States.
authors: Matthew W
authors: MW
authors: Meyer
authors: Kelsey L
authors: KL
authors: Larson
authors: Rakesh C
authors: RC
authors: Mahadevapuram
authors: Michael D
authors: MD
authors: Lesoine
authors: John A
authors: JA
authors: Carr
authors: Sumit
authors: S
authors: Chaudhary
authors: Emily A
authors: EA
authors: Smith