title: A strained organic field-effect transistor with a gate-tunable superconducting channel.
abstract: In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high-performance computing and should be valid for electric-field-induced superconducting (SC) devices, too. However, so far, the carrier density is the sole parameter for field-induced SC interfaces. Here we show an active organic SC field-effect transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced SC state accessible at low temperature with a paraelectric solid gate. An active three-terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled SC phases in correlated materials.
authors: 1] Division of Functional Molecular Systems, Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science, 38 Nishigounaka, Myodaiji, Okazaki 444-8585, Japan [2] RIKEN , 2-1 Hirosawa, Wako 351-0198, Japan [3] JST, PRESTO (Precursory Research for Embryonic Science and Technology), 4-1-8 Honcho, Kawaguchi 332-0012, Japan.
authors: Hiroshi M
authors: HM
authors: Yamamoto
authors: Masaki
authors: M
authors: Nakano
authors: Masayuki
authors: M
authors: Suda
authors: Yoshihiro
authors: Y
authors: Iwasa
authors: Masashi
authors: M
authors: Kawasaki
authors: Reizo
authors: R
authors: Kato