title: Controlled growth of atomically thin In2Se3 flakes by van der Waals epitaxy.
abstract: The controlled production of high-quality atomically thin III-VI semiconductors poses a challenge for practical applications in electronics, optoelectronics, and energy science. Here, we exploit a controlled synthesis of single- and few-layer In2Se3 flakes on different substrates, such as graphene and mica, by van der Waals epitaxy. The thickness, orientation, nucleation site, and crystal phase of In2Se3 flakes were well-controlled by tuning the growth condition. The obtained In2Se3 flakes exhibit either semiconducting or metallic behavior depending on the crystal structures. Meanwhile, field-effect transistors based on the semiconducting In2Se3 flakes showed an efficient photoresponse. The controlled growth of atomically thin In2Se3 flakes with diverse conductivity and efficient photoresponsivity could lead to new applications in photodetectors and phase change memory devices.
authors: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, P. R. China.
authors: Min
authors: M
authors: Lin
authors: Di
authors: D
authors: Wu
authors: Yu
authors: Y
authors: Zhou
authors: Wei
authors: W
authors: Huang
authors: Wei
authors: W
authors: Jiang
authors: Wenshan
authors: W
authors: Zheng
authors: Shuli
authors: S
authors: Zhao
authors: Chuanhong
authors: C
authors: Jin
authors: Yunfan
authors: Y
authors: Guo
authors: Hailin
authors: H
authors: Peng
authors: Zhongfan
authors: Z
authors: Liu