title: A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope.
abstract: We present a facile CMOS-compatible fabrication of lateral gate-all-around (GAA) field effect transistors (FETs) based on concentric Si-SiO₂/N(++)Si core-multi-shell nanowires (NWs). Si-SiO₂/N(++)Si core-multi-shell NWs were prepared by sequential Si NW growth, thermal oxidation and Si deposition processes in a single chamber. The GAA NW FET was then fabricated using the Si core, SiO₂ inner-shell, N(++) Si outer-shell as a channel, gate dielectric, and gate electrode, respectively. A one-step wet etching process was able to define the gate and source-drain contact regions. The SiNW GAA FET clearly exhibits a geometry-dependent gating effect and a steep subthreshold slope due to the low interface trapped charge density at the interface of the Si core and the SiO₂ shell. Our proposed SiNW GAA structures offer new opportunities for low-energy-consumption digital device applications.
authors: SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 440-746, Korea. dwhang@skku.edu.
authors: Jae-Hyun
authors: JH
authors: Lee
authors: Byung-Sung
authors: BS
authors: Kim
authors: Soon-Hyung
authors: SH
authors: Choi
authors: Yamujin
authors: Y
authors: Jang
authors: Sung Woo
authors: SW
authors: Hwang
authors: Dongmok
authors: D
authors: Whang