title: Layer thinning and etching of mechanically exfoliated MoS2 nanosheets by thermal annealing in air.
abstract: A simple thermal annealing method for layer thinning and etching of mechanically exfoliated MoS2 nanosheets in air is reported. Using this method, single-layer (1L) MoS2 nanosheets are achieved after the thinning of MoS2 nanosheets from double-layer (2L) to quadri-layer (4L) at 330 °C. The as-prepared 1L MoS2 nanosheet shows comparable optical and electrical properties with the mechanically exfoliated, pristine one. In addition, for the first time, the MoS2 mesh with high-density of triangular pits is also fabricated at 330 °C, which might arise from the anisotropic etching of the active MoS2 edge sites. As a result of thermal annealing in air, the thinning of MoS2 nanosheet is possible due to its oxidation to form MoO3 . Importantly, the MoO3 fragments on the top of thinned MoS2 layer induces the hole injection, resulting in the p-type channel in fabricated field-effect transistors.
authors: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore, Phone: +65-6790-5175. Fax: +65-6790-9081, Website: http://www.ntu.edu.sg/home/hzhang/
authors: Jumiati
authors: J
authors: Wu
authors: Hai
authors: H
authors: Li
authors: Zongyou
authors: Z
authors: Yin
authors: Hong
authors: H
authors: Li
authors: Juqing
authors: J
authors: Liu
authors: Xiehong
authors: X
authors: Cao
authors: Qing
authors: Q
authors: Zhang
authors: Hua
authors: H
authors: Zhang
keywords: MoS2; etching; layer thinning; mesh; nanosheet; thermal annealing