title: Origin of the self-limited electron densities at Al₂O₃/SrTiO₃ heterostructures grown by atomic layer deposition - oxygen diffusion model.
abstract: Recently, 2-dimensional electron gas (2-DEG) was discovered at the interface of Al₂O₃/SrTiO₃ (STO) heterostructures, in which the amorphous Al₂O₃ layers were grown by atomic layer deposition (ALD). The saturated electron density at the Al₂O₃/STO heterostructures above the critical thickness of Al₂O₃ is explained by an oxygen diffusion mechanism.
authors: Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA. gordon@chemistry.harvard.edu.
authors: Sang Woon
authors: SW
authors: Lee
authors: Jaeyeong
authors: J
authors: Heo
authors: Roy G
authors: RG
authors: Gordon