title: Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.
abstract: Strong quantization effects and tuneable near-infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ-rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.
authors: School of Physics and AstronomyThe University of Nottingham, Nottingham, NG7 2RD, UK.
authors: Garry W
authors: GW
authors: Mudd
authors: Simon A
authors: SA
authors: Svatek
authors: Tianhang
authors: T
authors: Ren
authors: Amalia
authors: A
authors: Patanè
authors: Oleg
authors: O
authors: Makarovsky
authors: Laurence
authors: L
authors: Eaves
authors: Peter H
authors: PH
authors: Beton
authors: Zakhar D
authors: ZD
authors: Kovalyuk
authors: George V
authors: GV
authors: Lashkarev
authors: Zakhar R
authors: ZR
authors: Kudrynskyi
authors: Alexandr I
authors: AI
authors: Dmitriev
keywords: Indium selenide; atomic force microscopy; dichalcogenides; micro-photoluminescence; two-dimensional systems
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