title: Surface roughness induced electron mobility degradation in InAs nanowires.
abstract: In this work, we present a study of the surface roughness dependent electron mobility in InAs nanowires grown by the nickel-catalyzed chemical vapor deposition method. These nanowires have good crystallinity, well-controlled surface morphology without any surface coating or tapering and an excellent peak field-effect mobility up to 15,000 cm(2) V(-1) s(-1) when configured into back-gated field-effect nanowire transistors. Detailed electrical characterizations reveal that the electron mobility degrades monotonically with increasing surface roughness and diameter scaling, while low-temperature measurements further decouple the effects of surface/interface traps and phonon scattering, highlighting the dominant impact of surface roughness scattering on the electron mobility for miniaturized and surface disordered nanowires. All these factors suggest that careful consideration of nanowire geometries and surface condition is required for designing devices with optimal performance.
authors: Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon Tong, Kowloon, Hong Kong.
authors: Fengyun
authors: F
authors: Wang
authors: SenPo
authors: S
authors: Yip
authors: Ning
authors: N
authors: Han
authors: KitWa
authors: K
authors: Fok
authors: Hao
authors: H
authors: Lin
authors: Jared J
authors: JJ
authors: Hou
authors: Guofa
authors: G
authors: Dong
authors: TakFu
authors: T
authors: Hung
authors: K S
authors: KS
authors: Chan
authors: Johnny C
authors: JC
authors: Ho