title: Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures.
abstract: The Au/DyMnO₃/Nb:SrTiO₃/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 10(5) s, and the change ratio of resistance (or capacitance) is larger than 100 over the 10(8) switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO₃/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO₃/Nb:SrTiO₃ stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device.
authors: Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P R China. zbyan37@gmail.com
authors: Z B
authors: ZB
authors: Yan
authors: J-M
authors: JM
authors: Liu
mesh_terms: D016248:Computer Storage Devices; D025802:Electric Capacitance; D017097:Electric Impedance; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing; D008670:Metals / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D055672:Static Electricity
chemical_list: D008670:Metals; D010087:Oxides
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