title: Graphene for true Ohmic contact at metal-semiconductor junctions.
abstract: The rectifying Schottky characteristics of the metal-semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni-Si junction, one of the most commonly used metal-semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10(-8) ~ 10(-9) Ω cm(2) at a Si doping concentration of 10(17) cm(-3).
authors: Samsung Advanced Institute of Technology, Samsung Electronics Co. , Yongin-si 446-712, Korea.
authors: Kyung-Eun
authors: KE
authors: Byun
authors: Hyun-Jong
authors: HJ
authors: Chung
authors: Jaeho
authors: J
authors: Lee
authors: Heejun
authors: H
authors: Yang
authors: Hyun Jae
authors: HJ
authors: Song
authors: Jinseong
authors: J
authors: Heo
authors: David H
authors: DH
authors: Seo
authors: Seongjun
authors: S
authors: Park
authors: Sung Woo
authors: SW
authors: Hwang
authors: InKyeong
authors: I
authors: Yoo
authors: Kinam
authors: K
authors: Kim