title: Suppression of ionic liquid gate-induced metallization of SrTiO3(001) by oxygen.
abstract: Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and nitrogen have no effect. The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation.
authors: IBM Almaden Research Center , San Jose, California, United States.
authors: Mingyang
authors: M
authors: Li
authors: Wei
authors: W
authors: Han
authors: Xin
authors: X
authors: Jiang
authors: Jaewoo
authors: J
authors: Jeong
authors: Mahesh G
authors: MG
authors: Samant
authors: Stuart S P
authors: SS
authors: Parkin
mesh_terms: D004553:Electric Conductivity; D015640:Ion Channel Gating; D052578:Ionic Liquids / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D010100:Oxygen / Q000737:chemistry*; D013324:Strontium / Q000737:chemistry*; D014025:Titanium / Q000737:chemistry*
chemical_list: D052578:Ionic Liquids; D010087:Oxides; D014025:Titanium; C119252:strontium titanium oxide; D010100:Oxygen; D013324:Strontium