title: Fast energy relaxation of hot carriers near the Dirac point of graphene.
abstract: We investigate energy relaxation of hot carriers in monolayer and bilayer graphene devices, demonstrating that the relaxation rate increases significantly as the Dirac point is approached from either the conduction or valence band. This counterintuitive behavior appears consistent with ideas of charge puddling under disorder, suggesting that it becomes very difficult to excite carriers out of these localized regions. These results therefore demonstrate how the peculiar properties of graphene extend also to the behavior of its nonequilibrium carriers.
authors: Department of Physics, University at Buffalo , Buffalo, New York 14260-1500, United States.
authors: R
authors: R
authors: Somphonsane
authors: H
authors: H
authors: Ramamoorthy
authors: G
authors: G
authors: Bohra
authors: G
authors: G
authors: He
authors: D K
authors: DK
authors: Ferry
authors: Y
authors: Y
authors: Ochiai
authors: N
authors: N
authors: Aoki
authors: J P
authors: JP
authors: Bird
mesh_terms: D006108:Graphite / Q000737:chemistry*; D006358:Hot Temperature; D049329:Nanostructures / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D006108:Graphite