title: High-performance air-stable n-type carbon nanotube transistors with erbium contacts.
abstract: So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metals-erbium, lanthanum, and yttrium-are studied and benchmarked against p-type devices with palladium contacts. The crucial role of metal type and deposition conditions is elucidated with respect to overall yield and performance of the n-type devices. It is found that high oxidation rates and sensitivity to deposition conditions are the major causes for the lower yield and large variation in performance of n-type CNT devices with low work function metal contacts. Considerable improvement in device yield is attained using erbium contacts evaporated at high deposition rates. Furthermore, the air-stability of our n-type transistors is studied in light of the extreme sensitivity of these metals to oxidation.
authors.affiliation: IBM T. J. Watson Research Center , Yorktown Heights, New York 10598, United States.
authors.forename: Davood
authors.initials: D
authors.lastname: Shahrjerdi
authors.forename: Aaron D
authors.initials: AD
authors.lastname: Franklin
authors.forename: Satoshi
authors.initials: S
authors.lastname: Oida
authors.forename: John A
authors.initials: JA
authors.lastname: Ott
authors.forename: George S
authors.initials: GS
authors.lastname: Tulevski
authors.forename: Wilfried
authors.initials: W
authors.lastname: Haensch