title: Sidewall crystalline orientation effect of post-treatments for a replacement metal gate bulk fin field effect transistor.
abstract: The crystalline orientation effect is investigated for post-treatments of a replacement metal gate (RMG) p-type bulk fin field effect transistor (FinFET). After post-deposition annealing (PDA) and SF6 plasma treatment, the hole mobility is improved. From low-frequency noise analysis, reduction of the trap density and noise level is observed in PDA- and SF6-plasma-treated devices. (100) sidewall-oriented FinFETs show a lower noise level because of fewer interface traps compared to (110) sidewall-oriented devices. SF6 plasma affects the interface traps, whereas PDA relatively more affects bulk oxide traps for RMG high-k last FinFET.
authors.affiliation: Imec , 3001 Leuven, Belgium.
authors.forename: Jae Woo
authors.initials: JW
authors.lastname: Lee
authors.forename: Eddy
authors.initials: E
authors.lastname: Simoen
authors.forename: Anabela
authors.initials: A
authors.lastname: Veloso
authors.forename: Moon Ju
authors.initials: MJ
authors.lastname: Cho
authors.forename: Guillaume
authors.initials: G
authors.lastname: Boccardi
authors.forename: Lars-Åke
authors.initials: LÅ
authors.lastname: Ragnarsson
authors.forename: Thomas
authors.initials: T
authors.lastname: Chiarella
authors.forename: Naoto
authors.initials: N
authors.lastname: Horiguchi
authors.forename: Guido
authors.initials: G
authors.lastname: Groeseneken
authors.forename: Aaron
authors.initials: A
authors.lastname: Thean