title: Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates.
abstract: We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.
authors.affiliation: WPI Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Material Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan. tsukagoshi.kazuhito@nims.go.jp.
authors.forename: Mei Yin
authors.initials: MY
authors.lastname: Chan
authors.forename: Katsuyoshi
authors.initials: K
authors.lastname: Komatsu
authors.forename: Song-Lin
authors.initials: SL
authors.lastname: Li
authors.forename: Yong
authors.initials: Y
authors.lastname: Xu
authors.forename: Peter
authors.initials: P
authors.lastname: Darmawan
authors.forename: Hiromi
authors.initials: H
authors.lastname: Kuramochi
authors.forename: Shu
authors.initials: S
authors.lastname: Nakaharai
authors.forename: Alex
authors.initials: A
authors.lastname: Aparecido-Ferreira
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.forename: Kazuhito
authors.initials: K
authors.lastname: Tsukagoshi