title: Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.
abstract: Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.
authors.affiliation: Gwangju Institute of Science and Technology, Gwangju, Korea.
authors.forename: Sangsu
authors.initials: S
authors.lastname: Park
authors.forename: Jinwoo
authors.initials: J
authors.lastname: Noh
authors.forename: Myung-Lae
authors.initials: ML
authors.lastname: Choo
authors.forename: Ahmad Muqeem
authors.initials: AM
authors.lastname: Sheri
authors.forename: Man
authors.initials: M
authors.lastname: Chang
authors.forename: Young-Bae
authors.initials: YB
authors.lastname: Kim
authors.forename: Chang Jung
authors.initials: CJ
authors.lastname: Kim
authors.forename: Moongu
authors.initials: M
authors.lastname: Jeon
authors.forename: Byung-Geun
authors.initials: BG
authors.lastname: Lee
authors.forename: Byoung Hun
authors.initials: BH
authors.lastname: Lee
authors.forename: Hyunsang
authors.initials: H
authors.lastname: Hwang
mesh_terms: D004581:Electronics / Q000295:instrumentation*; D008959:Models, Neurological; D036103:Nanotechnology / Q000295:instrumentation*; D016571:Neural Networks, Computer; D012825:Silicon; D013569:Synapses
chemical_list: D012825:Silicon