title: Kondo memory in driven strongly correlated quantum dots.
abstract: We investigate the real-time current response of strongly correlated quantum dot systems under sinusoidal driving voltages. By means of an accurate hierarchical equations of motion approach, we demonstrate the presence of prominent memory effects induced by the Kondo resonance on the real-time current response. These memory effects appear as distinctive hysteresis line shapes and self-crossing features in the dynamic current-voltage characteristics, with concomitant excitation of odd-number overtones. They emerge as a cooperative effect of quantum coherence-due to inductive behavior-and electron correlations-due to the Kondo resonance. We also show the suppression of memory effects and the transition to classical behavior as a function of temperature. All these phenomena can be observed in experiments and may lead to novel quantum memory applications.
authors.affiliation: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Xiao
authors.initials: X
authors.lastname: Zheng
authors.forename: YiJing
authors.initials: Y
authors.lastname: Yan
authors.forename: Massimiliano
authors.initials: M
authors.lastname: Di Ventra