title: Vertically aligned nanostructures based on Na-doped ZnO nanorods for wide band gap semiconductor memory applications.
abstract: Vertically aligned undoped ZnO nanotips, nanotubes and nanorods were synthesized on the top facets of Na-doped ZnO nanorods without catalytic assistance under different growth times in a chemical vapor deposition system. The growth mechanism is discussed. The Na-doped nanorods were grown on a ZnO seed layer on Si. The p-type conductivity of the Na-doped nanorods was studied by temperature-dependent photoluminescence and nanorod back-gated field effect transistor measurements. The undoped nanorods, Na-doped nanorods and undoped seed layer form an n-p-n memory structure. The programming and retention characteristics have been demonstrated.
authors.affiliation: Quantum Structures Laboratory, Department of Electrical Engineering, University of California, Riverside, CA 92521, USA.
authors.forename: Jian
authors.initials: J
authors.lastname: Huang
authors.forename: Jing
authors.initials: J
authors.lastname: Qi
authors.forename: Zonglin
authors.initials: Z
authors.lastname: Li
authors.forename: Jianlin
authors.initials: J
authors.lastname: Liu