title: Design of Si/SiO2 micropillar cavities for Purcell-enhanced single photon emission at 1.55 μm from InAs/InP quantum dots.
abstract: Numerical simulations were carried out on micropillar cavities consisting of Si/SiO2 distributed Bragg reflectors (DBRs) with an InP spacer layer. Owing to a large refractive index contrast of ~2 in DBRs, cavities with just 4/6.5 top/bottom DBR pairs that give a low pillar height (~4.5 μm), have noticeable Purcell-enhancement effect in the 1.55-μm band. With careful designs on cavities with diameters of ~2.30 μm, a quality factor of up to 3300, a nominal Purcell factor of up to 110, and an output efficiency of ~60% are obtainable. These results ensure improvement of operation frequency and enhancement of photon indistinguishability for 1.55-μm single photon sources based on InAs/InP quantum dots.
authors.affiliation: Institute for NanoQuantum Information Electronics, the University of Tokyo, Meguro, Tokyo, Japan. hzsong@iis.u‑tokyo.ac.jp
authors.forename: Hai-Zhi
authors.initials: HZ
authors.lastname: Song
authors.forename: Kazuya
authors.initials: K
authors.lastname: Takemoto
authors.forename: Toshiyuki
authors.initials: T
authors.lastname: Miyazawa
authors.forename: Motomu
authors.initials: M
authors.lastname: Takatsu
authors.forename: Satoshi
authors.initials: S
authors.lastname: Iwamoto
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Yamamoto
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Arakawa