title: Extending the 3ω method: thermal conductivity characterization of thin films.
abstract: A lock-in technique for measurement of thermal conductivity and volumetric heat capacity of thin films is presented. The technique is based on the 3ω approach using electrical generation and detection of oscillatory heat along a thin metal strip. Thin films are deposited onto the backside of commercial silicon nitride membranes, forming a bilayer geometry with distinct thermal parameters. Stepwise comparison to an adapted heat diffusion model delivers these parameters for both layers. Highest sensitivity is found for metallic thin films.
authors.affiliation: Institut für Festkörperphysik, Universität Ulm, D-89069 Ulm, Germany.
authors.forename: Nico
authors.initials: N
authors.lastname: Bodenschatz
authors.forename: André
authors.initials: A
authors.lastname: Liemert
authors.forename: Sebastian
authors.initials: S
authors.lastname: Schnurr
authors.forename: Ulf
authors.initials: U
authors.lastname: Wiedwald
authors.forename: Paul
authors.initials: P
authors.lastname: Ziemann
mesh_terms: D017097:Electric Impedance; D008567:Membranes, Artificial; D017655:Silicon Compounds; D013696:Temperature; D013814:Thermal Conductivity
chemical_list: D008567:Membranes, Artificial; D017655:Silicon Compounds; C032734:silicon nitride