title: Twinning superlattice formation in GaAs nanowires.
abstract: Semiconductor nanowires have proven a versatile platform for the realization of novel structures unachievable by traditional planar epitaxy techniques. Among these, the periodic arrangement of twin planes to form twinning superlattice structures has generated particular interest. Here we demonstrate twinning superlattice formation in GaAs nanowires and investigate the diameter dependence of both morphology and twin plane spacing. An approximately linear relationship is found between plane spacing and nanowire diameter, which contrasts with previous results reported for both InP and GaP. Through modeling, we relate this to both the higher twin plane surface energy of GaAs coupled with the lower supersaturation relevant to Au seeded GaAs nanowire growth. Understanding and modeling the mechanism of twinning superlattice formation in III-V nanowires not only provides fundamental insight into the growth process, but also opens the door to the possibility of tailoring twin spacing for various electronic and mechanical applications.
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering and ‡Centre for Advanced Microscopy, The Australian National University , Canberra, ACT 0200, Australia.
authors.forename: Tim
authors.initials: T
authors.lastname: Burgess
authors.forename: Steffen
authors.initials: S
authors.lastname: Breuer
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff
authors.forename: Jennifer
authors.initials: J
authors.lastname: Wong-Leung
authors.forename: Qiang
authors.initials: Q
authors.lastname: Gao
authors.forename: Hark
authors.initials: H
authors.lastname: Hoe Tan
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish