title: Volatile and nonvolatile selective switching of a photo-assisted initialized atomic switch.
abstract: A photo-assisted atomic switch, which has a photoconductive molecular layer in a gap of about 20 nm between an Ag2S electrode and a Pt electrode, is set to a conventional gap-type atomic switch operation mode by light irradiation with the application of a small bias that precipitates Ag atoms from an Ag2S electrode. After this initialization, the switch operates only with application of a bias. In this study, we also found that after the set-operation a photo-assisted initialized atomic switch shows different switching modes depending on the bias range, i.e., volatile switching when the applied bias is smaller than the threshold bias, and nonvolatile switching when the applied bias is larger than the threshold bias. These characteristics can be useful in reconfiguring a circuit such as in neural computing systems.
authors.affiliation: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, Japan. HINO.Takami@nims.go.jp
authors.forename: T
authors.initials: T
authors.lastname: Hino
authors.forename: T
authors.initials: T
authors.lastname: Hasegawa
authors.forename: H
authors.initials: H
authors.lastname: Tanaka
authors.forename: T
authors.initials: T
authors.lastname: Tsuruoka
authors.forename: K
authors.initials: K
authors.lastname: Terabe
authors.forename: T
authors.initials: T
authors.lastname: Ogawa
authors.forename: M
authors.initials: M
authors.lastname: Aono