title: A light incident angle switchable ZnO nanorod memristor: reversible switching behavior between two non-volatile memory devices.
abstract: A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.
authors.affiliation: Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, POSTECH (Pohang University of Science and Technology), Pohang, 790-784, Korea.
authors.forename: Jinjoo
authors.initials: J
authors.lastname: Park
authors.forename: Seunghyup
authors.initials: S
authors.lastname: Lee
authors.forename: Junghan
authors.initials: J
authors.lastname: Lee
authors.forename: Kijung
authors.initials: K
authors.lastname: Yong
keywords: ZnO nanorod; incident angle; light; memristive switching; superhydrophobicity