title: Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths.
abstract: Crystal growth anisotropy in molecular beam epitaxy usually prevents deterministic nucleation of individual quantum dots when a thick GaAs buffer is grown over a nanopatterned substrate. Here, we demonstrate how this anisotropy can actually be used to mold nucleation sites for single dots on a much thicker buffer than has been achieved by conventional techniques. This approach greatly suppresses the problem of defect-induced line broadening for single quantum dots in a charge-tunable device, giving state-of-the-art optical linewidths for a system widely studied as a spin qubit for quantum information.
authors.affiliation: Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, D.C. 20375, United States.
authors.forename: Michael K
authors.initials: MK
authors.lastname: Yakes
authors.forename: Lily
authors.initials: L
authors.lastname: Yang
authors.forename: Allan S
authors.initials: AS
authors.lastname: Bracker
authors.forename: Timothy M
authors.initials: TM
authors.lastname: Sweeney
authors.forename: Peter G
authors.initials: PG
authors.lastname: Brereton
authors.forename: Mijin
authors.initials: M
authors.lastname: Kim
authors.forename: Chul Soo
authors.initials: CS
authors.lastname: Kim
authors.forename: Patrick M
authors.initials: PM
authors.lastname: Vora
authors.forename: Doewon
authors.initials: D
authors.lastname: Park
authors.forename: Samuel G
authors.initials: SG
authors.lastname: Carter
authors.forename: Daniel
authors.initials: D
authors.lastname: Gammon
mesh_terms: D016880:Anisotropy; D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization; D005708:Gallium / Q000737:chemistry; D007204:Indium / Q000737:chemistry*; D036103:Nanotechnology; D010316:Particle Size; D045663:Quantum Dots / Q000737:chemistry*
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide