title: Facile synthesis of graphene on dielectric surfaces using a two-temperature reactor CVD system.
abstract: Direct deposition of graphene on a dielectric substrate is demonstrated using a chemical vapor deposition system with a two-temperature reactor. The two-temperature reactor is utilized to offer sufficient, well-proportioned floating Cu atoms and to provide a temperature gradient for facile synthesis of graphene on dielectric surfaces. The evaporated Cu atoms catalyze the reaction in the presented method. C atoms and Cu atoms respectively act as the nuclei for forming graphene film in the low-temperature zone and the zones close to the high-temperature zones. A uniform and high-quality graphene film is formed in an atmosphere of sufficient and well-proportioned floating Cu atoms. Raman spectroscopy, scanning electron microscopy and atomic force microscopy confirm the presence of uniform and high-quality graphene.
authors.affiliation: College of Physics and Electronics, Shandong Normal University, Jinan, 250014, People's Republic of China.
authors.forename: C
authors.initials: C
authors.lastname: Zhang
authors.forename: B Y
authors.initials: BY
authors.lastname: Man
authors.forename: C
authors.initials: C
authors.lastname: Yang
authors.forename: S Z
authors.initials: SZ
authors.lastname: Jiang
authors.forename: M
authors.initials: M
authors.lastname: Liu
authors.forename: C S
authors.initials: CS
authors.lastname: Chen
authors.forename: S C
authors.initials: SC
authors.lastname: Xu
authors.forename: Z C
authors.initials: ZC
authors.lastname: Sun
authors.forename: X G
authors.initials: XG
authors.lastname: Gao
authors.forename: X J
authors.initials: XJ
authors.lastname: Chen