title: Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array.
abstract: A light-emitting device consisting of a two-dimensional regularly patterned InGaN/GaN quantum well (QW) nanorod (NR) light-emitting diode (LED) array is implemented and characterized. The NR p-i-n structure includes n-GaN NR core and essentially conformal p-GaN shell. The active regions include nonpolar sidewall QWs and polar top-face QWs. A conformal layer of transparent GaZnO of low resistivity is deposited onto the NR LED structure for spreading the injection current over the sidewalls. It is found that the blue-shift range of the output spectral peak in increasing injection current is smaller than that of a planar LED of about the same operation wavelength in a similar variation range of injection current density although it is nonzero. The small blue-shift range is attributed to the mixed emission contributions from the nonpolar sidewall QWs and polar top-face QWs.
authors.affiliation: Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan.
authors.forename: Horng-Shyang
authors.initials: HS
authors.lastname: Chen
authors.forename: Yu-Feng
authors.initials: YF
authors.lastname: Yao
authors.forename: Che-Hao
authors.initials: CH
authors.lastname: Liao
authors.forename: Charng-Gan
authors.initials: CG
authors.lastname: Tu
authors.forename: Chia-Ying
authors.initials: CY
authors.lastname: Su
authors.forename: Wen-Ming
authors.initials: WM
authors.lastname: Chang
authors.forename: Yean-Woei
authors.initials: YW
authors.lastname: Kiang
authors.forename: C C
authors.initials: CC
authors.lastname: Yang