title: Selective growth of n-type nanoparticles on p-type semiconductors for Z-scheme photocatalysis.
abstract: Nanoparticles of an n-type WO3 semiconductor were segregated on the surface of p-type CaFe2O4 particles by a heterogeneous nucleation process under controlled hydrothermal conditions. By use of this approach, WO3 nanoparticles were selectively deposited on the surface of CaFe2O4, resulting in a significant increase in the photocatalytic reaction rate of the WO3/CaFe2O4 composite for the decomposition of gaseous acetaldehyde under visible-light irradiation. The high visible-light activity of the WO3/CaFe2O4 composite was due to efficient charge recombination through the junctions that formed between the two semiconductors.
authors.affiliation: Department of Metallurgy and Ceramic Science, Graduate School of Science and Engineering, Tokyo Institute of Technology , 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan.
authors.forename: Masahiro
authors.initials: M
authors.lastname: Miyauchi
authors.forename: Yuuya
authors.initials: Y
authors.lastname: Nukui
authors.forename: Daiki
authors.initials: D
authors.lastname: Atarashi
authors.forename: Etsuo
authors.initials: E
authors.lastname: Sakai