title: InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition.
abstract: The complicated behaviors of InAs/GaAs quantum dots with increasing V/III ratio associated with several competing mechanisms have been described. The results demonstrate that the densities of InAs quantum dots can be tuned in a wide range from 105 to 1010 cm-2 by simply manipulating V/III ratio via metal-organic chemical vapor deposition. These results are mainly ascribed to the changes of coverage and In adatom migration length due to the increasing V/III ratio.
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China. yanyan.fang@hust.edu.cn.
authors.forename: Senlin
authors.initials: S
authors.lastname: Li
authors.forename: Qingqing
authors.initials: Q
authors.lastname: Chen
authors.forename: Shichuang
authors.initials: S
authors.lastname: Sun
authors.forename: Yulian
authors.initials: Y
authors.lastname: Li
authors.forename: Qiangzhong
authors.initials: Q
authors.lastname: Zhu
authors.forename: Juntao
authors.initials: J
authors.lastname: Li
authors.forename: Xuehua
authors.initials: X
authors.lastname: Wang
authors.forename: Junbo
authors.initials: J
authors.lastname: Han
authors.forename: Junpei
authors.initials: J
authors.lastname: Zhang
authors.forename: Changqing
authors.initials: C
authors.lastname: Chen
authors.forename: Yanyan
authors.initials: Y
authors.lastname: Fang