title: Tuning electrical properties of graphite oxide by plasma.
abstract: The electrical properties of graphite oxide (GO) can be tuned consecutively by treating samples with ammonia and hydrogen plasma. When altering ammonia plasma time from 10 to 4.5 min, large area (greater than 100×100 μm²), n-type, ambipolar and p-type semiconducting reduced graphite oxide (RGO) sheets could be obtained. The highest mobilities of the electron and hole are 5.41 and 2.10 cm² V⁻¹ s⁻¹ at low operational voltage (3 or -3 V, respectively). When treating a GO film with hydrogen:argon (9:1) plasma, high conductivity RGO was obtained with conductivity around 630 S cm⁻¹. It is anticipated that this study could pave the way towards carbon-based electronics.
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
authors.forename: Hongfei
authors.initials: H
authors.lastname: Zhu
authors.forename: Deyang
authors.initials: D
authors.lastname: Ji
authors.forename: Lang
authors.initials: L
authors.lastname: Jiang
authors.forename: Huanli
authors.initials: H
authors.lastname: Dong
authors.forename: Wenping
authors.initials: W
authors.lastname: Hu
keywords: electrical property; graphite oxide; reduced graphite oxide; transistor