title: Semiconductor diode characterization for total skin electron irradiation.
abstract: In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control.
authors.affiliation: Centro de investigación en Ciencia Aplicada y Tecnología Avanzada-Legaría del Instituto Politécnico Nacional, Legaría 694. Colonia Irrigación, 11500 México D.F. Electronic address: os_xj220@yahoo.com.mx.
authors.forename: O A
authors.initials: OA
authors.lastname: Madrid González
authors.forename: T
authors.initials: T
authors.lastname: Rivera Montalvo
mesh_terms: D002138:Calibration; D004583:Electrons; D006801:Humans; D011879:Radiotherapy Dosage; D012666:Semiconductors; D012867:Skin / Q000528:radiation effects*
keywords: Diode; Electrons; High rate; Irradiation; Mycosis; Total body