title: Annular fast electron transport in silicon arising from low-temperature resistivity.
abstract: Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.
authors.affiliation: Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom.
authors.forename: D A
authors.initials: DA
authors.lastname: MacLellan
authors.forename: D C
authors.initials: DC
authors.lastname: Carroll
authors.forename: R J
authors.initials: RJ
authors.lastname: Gray
authors.forename: N
authors.initials: N
authors.lastname: Booth
authors.forename: M
authors.initials: M
authors.lastname: Burza
authors.forename: M P
authors.initials: MP
authors.lastname: Desjarlais
authors.forename: F
authors.initials: F
authors.lastname: Du
authors.forename: B
authors.initials: B
authors.lastname: Gonzalez-Izquierdo
authors.forename: D
authors.initials: D
authors.lastname: Neely
authors.forename: H W
authors.initials: HW
authors.lastname: Powell
authors.forename: A P L
authors.initials: AP
authors.lastname: Robinson
authors.forename: D R
authors.initials: DR
authors.lastname: Rusby
authors.forename: G G
authors.initials: GG
authors.lastname: Scott
authors.forename: X H
authors.initials: XH
authors.lastname: Yuan
authors.forename: C-G
authors.initials: CG
authors.lastname: Wahlström
authors.forename: P
authors.initials: P
authors.lastname: McKenna