title: High-mobility graphene on liquid p-block elements by ultra-low-loss CVD growth.
abstract: The high-quality and low-cost of the graphene preparation method decide whether graphene is put into the applications finally. Enormous efforts have been devoted to understand and optimize the CVD process of graphene over various d-block transition metals (e.g. Cu, Ni and Pt). Here we report the growth of uniform high-quality single-layer, single-crystalline graphene flakes and their continuous films over p-block elements (e.g. Ga) liquid films using ambient-pressure chemical vapor deposition. The graphene shows high crystalline quality with electron mobility reaching levels as high as 7400 cm(2) V(-1) s(-1) under ambient conditions. Our employed growth strategy is ultra-low-loss. Only trace amounts of Ga are consumed in the production and transfer of the graphene and expensive film deposition or vacuum systems are not needed. We believe that our research will open up new territory in the field of graphene growth and thus promote its practical application.
authors.affiliation: College of Chemistry and Molecular Science, Wuhan University, Wuhan 430072, China.
authors.forename: Jiao
authors.initials: J
authors.lastname: Wang
authors.forename: Mengqi
authors.initials: M
authors.lastname: Zeng
authors.forename: Lifang
authors.initials: L
authors.lastname: Tan
authors.forename: Boya
authors.initials: B
authors.lastname: Dai
authors.forename: Yuan
authors.initials: Y
authors.lastname: Deng
authors.forename: Mark
authors.initials: M
authors.lastname: Rümmeli
authors.forename: Haitao
authors.initials: H
authors.lastname: Xu
authors.forename: Zishen
authors.initials: Z
authors.lastname: Li
authors.forename: Sheng
authors.initials: S
authors.lastname: Wang
authors.forename: Lianmao
authors.initials: L
authors.lastname: Peng
authors.forename: Jürgen
authors.initials: J
authors.lastname: Eckert
authors.forename: Lei
authors.initials: L
authors.lastname: Fu
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