title: Gate-controlled spin-orbit interaction in inas high-electron mobility transistor layers epitaxially transferred onto Si substrates.
abstract: We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm(2)/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (α) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the α value increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations indicate that the main causes of the large improvement in α are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented in this study offer a technological platform for the integration of III-V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology.
authors.affiliation: Spin Convergence Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea.
authors.forename: Kyung-Ho
authors.initials: KH
authors.lastname: Kim
authors.forename: Doo-Seung
authors.initials: DS
authors.lastname: Um
authors.forename: Hochan
authors.initials: H
authors.lastname: Lee
authors.forename: Seongdong
authors.initials: S
authors.lastname: Lim
authors.forename: Joonyeon
authors.initials: J
authors.lastname: Chang
authors.forename: Hyun Cheol
authors.initials: HC
authors.lastname: Koo
authors.forename: Min-Wook
authors.initials: MW
authors.lastname: Oh
authors.forename: Hyunhyub
authors.initials: H
authors.lastname: Ko
authors.forename: Hyung-Jun
authors.initials: HJ
authors.lastname: Kim