title: Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B.
abstract: Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiOxlayer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, the formation of a Ga0.2In0.8As alloy was observed if the growth was performed on samples covered by a defective oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Ga concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.
authors.affiliation: Festkörperphysik, Universität Siegen , Walter-Flex-Strasse 3, Siegen, Nordrhein Westfalen 57072, Germany.
authors.forename: Anton
authors.initials: A
authors.lastname: Davydok
authors.forename: Torsten
authors.initials: T
authors.lastname: Rieger
authors.forename: Andreas
authors.initials: A
authors.lastname: Biermanns
authors.forename: Muhammad
authors.initials: M
authors.lastname: Saqib
authors.forename: Thomas
authors.initials: T
authors.lastname: Grap
authors.forename: Mihail Ion
authors.initials: MI
authors.lastname: Lepsa
authors.forename: Ullrich
authors.initials: U
authors.lastname: Pietsch
keywords: X-ray diffraction; molecular beam epitaxy (MBE) growth; semiconductor nanowires
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