title: Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams.
abstract: Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.
authors.affiliation: Festkörperphysik, Universität Siegen, Walter-Flex-Strasse 3, D-57072 Siegen, Germany ; European Synchrotron Radiation Facility, F-38043 Grenoble, France.
authors.forename: Genziana
authors.initials: G
authors.lastname: Bussone
authors.forename: Rüdiger
authors.initials: R
authors.lastname: Schott
authors.forename: Andreas
authors.initials: A
authors.lastname: Biermanns
authors.forename: Anton
authors.initials: A
authors.lastname: Davydok
authors.forename: Dirk
authors.initials: D
authors.lastname: Reuter
authors.forename: Gerardina
authors.initials: G
authors.lastname: Carbone
authors.forename: Tobias U
authors.initials: TU
authors.lastname: Schülli
authors.forename: Andreas D
authors.initials: AD
authors.lastname: Wieck
authors.forename: Ullrich
authors.initials: U
authors.lastname: Pietsch
keywords: GaAs; grazing-incidence X-ray diffraction; growth; semiconductor nanowires
references.citation: Phys Rev Lett. 1986 Mar 17;56(11):1144-1147
references.pmid: 10032581
references.citation: Nano Lett. 2010 Sep 8;10(9):3494-9
references.pmid: 20707361
references.citation: Nano Lett. 2009 May;9(5):1877-82
references.pmid: 19320494
references.citation: Nano Lett. 2010 May 12;10(5):1529-36
references.pmid: 20394412
references.citation: Nanoscale Res Lett. 2012 Feb 08;7:109
references.pmid: 22315928
references.citation: Nat Mater. 2005 Jun;4(6):455-9
references.pmid: 15895100
references.citation: Nano Lett. 2010 Nov 10;10(11):4475-82
references.pmid: 20932012
references.citation: J Synchrotron Radiat. 2009 Nov;16(Pt 6):796-802
references.pmid: 19844016