title: Surface passivation of efficient nanotextured black silicon solar cells using thermal atomic layer deposition.
abstract: Efficient nanotextured black silicon solar cells passivated by an Al2O3 layer are demonstrated. The broadband antireflection of the nanotextured black silicon solar cells was provided by fabricating vertically aligned silicon nanowire (SiNW) arrays on the n(+) emitter. A highly conformal Al2O3 layer was deposited upon the SiNW arrays by the thermal atomic layer deposition (ALD) based on the multiple pulses scheme. The nanotextured black silicon wafer covered with the Al2O3 layer exhibited a low total reflectance of ∼1.5% in a broad spectrum from 400 to 800 nm. The Al2O3 passivation layer also contributes to the suppressed surface recombination, which was explored in terms of the chemical and field-effect passivation effects. An 8% increment of short-circuit current density and 10.3% enhancement of efficiency were achieved due to the ALD Al2O3 surface passivation and forming gas annealing. A high efficiency up to 18.2% was realized in the ALD Al2O3-passivated nanotextured black silicon solar cells.
authors.affiliation: Department of Materials Science and Engineering, National Taiwan University , Taipei 106, Taiwan.
authors.forename: Wei-Cheng
authors.initials: WC
authors.lastname: Wang
authors.forename: Che-Wei
authors.initials: CW
authors.lastname: Lin
authors.forename: Hsin-Jui
authors.initials: HJ
authors.lastname: Chen
authors.forename: Che-Wei
authors.initials: CW
authors.lastname: Chang
authors.forename: Jhih-Jie
authors.initials: JJ
authors.lastname: Huang
authors.forename: Ming-Jui
authors.initials: MJ
authors.lastname: Yang
authors.forename: Budi
authors.initials: B
authors.lastname: Tjahjono
authors.forename: Jian-Jia
authors.initials: JJ
authors.lastname: Huang
authors.forename: Wen-Ching
authors.initials: WC
authors.lastname: Hsu
authors.forename: Miin-Jang
authors.initials: MJ
authors.lastname: Chen