title: Can we build a truly high performance computer which is flexible and transparent?
abstract: State-of-the art computers need high performance transistors, which consume ultra-low power resulting in longer battery lifetime. Billions of transistors are integrated neatly using matured silicon fabrication process to maintain the performance per cost advantage. In that context, low-cost mono-crystalline bulk silicon (100) based high performance transistors are considered as the heart of today's computers. One limitation is silicon's rigidity and brittleness. Here we show a generic batch process to convert high performance silicon electronics into flexible and semi-transparent one while retaining its performance, process compatibility, integration density and cost. We demonstrate high-k/metal gate stack based p-type metal oxide semiconductor field effect transistors on 4 inch silicon fabric released from bulk silicon (100) wafers with sub-threshold swing of 80 mV dec(-1) and on/off ratio of near 10(4) within 10% device uniformity with a minimum bending radius of 5 mm and an average transmittance of ~7% in the visible spectrum.
authors.affiliation: Integrated Nanotechnology Lab, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
authors.forename: Jhonathan P
authors.initials: JP
authors.lastname: Rojas
authors.forename: Galo A
authors.initials: GA
authors.lastname: Torres Sevilla
authors.forename: Muhammad M
authors.initials: MM
authors.lastname: Hussain
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