title: Interface-engineered resistive switching: CeO(2) nanocubes as high-performance memory cells.
abstract: We reported a novel and facile approach to fabricate self-assembled CeO2 nanocube-based resistive-switching memory device. The device was found to exhibit excellent bipolar resistive-switching characteristics with a high resistance state (HRS/OFF) to low resistance state (LRS/ON) ratio of 10(4), better uniformity, and stability up to 480 K. The presence of oxygen vacancies and their role was discussed to explain the resistive-switching phenomenon in the fabricated devices. Further, the effect of the film thickness on carrier concentrations and estimated electric field strength with the switching (OFF/ON) ratio were also discussed.
authors.affiliation: School of Materials Science and Engineering, University of New South Wales , Sydney, 2052 New South Wales, Australia.
authors.forename: Adnan
authors.initials: A
authors.lastname: Younis
authors.forename: Dewei
authors.initials: D
authors.lastname: Chu
authors.forename: Ionsecu
authors.initials: I
authors.lastname: Mihail
authors.forename: Sean
authors.initials: S
authors.lastname: Li