title: Universal scheme to generate metal-insulator transition in disordered systems.
abstract: We propose a scheme to generate metal-insulator transition in the random binary layer (RBL) model, which is constructed by randomly assigning two types of layers along the longitudinal direction. Based on a tight-binding Hamiltonian, the localization length is calculated for a variety of RBLs with different cross section geometries by using the transfer-matrix method. Both analytical and numerical results show that a band of extended states could appear in the quasi-one-dimensional RBLs and the systems behave as metals by properly tuning the model parameters, due to the existence of a completely ordered subband, leading to a metal-insulator transition in parameter space. Furthermore, the extended states are irrespective of the diagonal and off-diagonal disorder strengths. Our results can be generalized to two- and three-dimensional disordered systems with arbitrary layer structures, and may be realized in Bose-Einstein condensates.
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
authors.forename: Ai-Min
authors.initials: AM
authors.lastname: Guo
authors.forename: Shi-Jie
authors.initials: SJ
authors.lastname: Xiong
authors.forename: X C
authors.initials: XC
authors.lastname: Xie
authors.forename: Qing-feng
authors.initials: QF
authors.lastname: Sun
mesh_terms: D003198:Computer Simulation; D004553:Electric Conductivity; D008670:Metals / Q000737:chemistry*; D008956:Models, Chemical; D008958:Models, Molecular; D044367:Phase Transition
chemical_list: D008670:Metals