title: Carrier separation at dislocation pairs in CdTe.
abstract: Through the use of aberration corrected scanning transmission electron microscopy, the atomic configuration of CdTe intragrain Shockley partial dislocation pairs has been determined: Single Cd and Te columns are present at opposite ends of both intrinsic and extrinsic stacking faults. These columns have threefold and fivefold coordination, indicating the presence of dangling bonds. Counterintuitively, density-functional theory calculations show that these dislocation cores do not act as recombination centers; instead, they lead to local band bending that separates electrons and holes and reduces undesirable carrier recombination.
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA and Department of Chemistry, Vanderbilt University, Nashville, Tennessee 37235, USA.
authors.forename: Chen
authors.initials: C
authors.lastname: Li
authors.forename: Yelong
authors.initials: Y
authors.lastname: Wu
authors.forename: Timothy J
authors.initials: TJ
authors.lastname: Pennycook
authors.forename: Andrew R
authors.initials: AR
authors.lastname: Lupini
authors.forename: Donovan N
authors.initials: DN
authors.lastname: Leonard
authors.forename: Wanjian
authors.initials: W
authors.lastname: Yin
authors.forename: Naba
authors.initials: N
authors.lastname: Paudel
authors.forename: Mowafak
authors.initials: M
authors.lastname: Al-Jassim
authors.forename: Yanfa
authors.initials: Y
authors.lastname: Yan
authors.forename: Stephen J
authors.initials: SJ
authors.lastname: Pennycook