title: Covariant description of X-ray diffraction from anisotropically relaxed epitaxial structures.
abstract: A general theoretical approach to the description of epitaxial layers with essentially different cell parameters and in-plane relaxation anisotropy has been developed. A covariant description of relaxation in such structures has been introduced. An iteration method for evaluation of these parameters on the basis of the diffraction data set has been worked out together with error analysis and reliability checking. The validity of the presented theoretical approaches has been proved witha-ZnO onr-sapphire samples grown in the temperature range from 573 K up to 1073 K. A covariant description of relaxation anisotropy for these samples has been estimated with data measured for different directions of the diffraction plane relative to the sample surface.
authors.affiliation: Belarusian State University, Minsk, Belarus.
authors.forename: A
authors.initials: A
authors.lastname: Zhylik
authors.forename: A
authors.initials: A
authors.lastname: Benediktovitch
authors.forename: I
authors.initials: I
authors.lastname: Feranchuk
authors.forename: K
authors.initials: K
authors.lastname: Inaba
authors.forename: A
authors.initials: A
authors.lastname: Mikhalychev
authors.forename: A
authors.initials: A
authors.lastname: Ulyanenkov
keywords: epitaxial layers; high-resolution X-ray diffraction; relaxation parameters; theoretical approach
references.citation: Phys Rev B Condens Matter. 1995 Feb 15;51(7):4381-4387
references.pmid: 9979282