title: Growth of large-scale boron nanowire patterns with identical base-up mode and in situ field emission studies of individual boron nanowire.
abstract: Boron nanowires (BNWs) are considered as an ideal optoelectronic nanomaterial, but controlling them in identical growth mode and large-area patterns is technically challenging. Here, large-scale BNW patterns with a uniform base-up growth mode are successfully fabricated by choosing Ni film as the catalyst. Moreover, they exhibit low turn-on field (4.3 V/μm) and excellent field emission uniformity (88%).
authors.affiliation: Address State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Physics and Engineering, Sun Yat-sen University, Guangzhou, 510275, PR China; Inorganic Nanostructured Materials Group, MANA, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan.
authors.forename: Fei
authors.initials: F
authors.lastname: Liu
authors.forename: Haibo
authors.initials: H
authors.lastname: Gan
authors.forename: Dai-Ming
authors.initials: DM
authors.lastname: Tang
authors.forename: Yunzhe
authors.initials: Y
authors.lastname: Cao
authors.forename: Xiaoshu
authors.initials: X
authors.lastname: Mo
authors.forename: Jun
authors.initials: J
authors.lastname: Chen
authors.forename: Shaozhi
authors.initials: S
authors.lastname: Deng
authors.forename: Ningsheng
authors.initials: N
authors.lastname: Xu
authors.forename: Dmitri
authors.initials: D
authors.lastname: Golberg
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Bando
keywords: base-up growth mode; boron nanowire; field emission uniformity; in situ measurement; patterned growth