title: P-type Cu(2)O/SnO bilayer thin film transistors processed at low temperatures.
abstract: P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 °C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm(2) V(-1) s(-1), 1.5×10(2), and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed.
authors.affiliation: Department of Physics, King Abdulaziz University , Jeddah 21589, Saudi Arabia.
authors.forename: Hala A
authors.initials: HA
authors.lastname: Al-Jawhari
authors.forename: Jesus A
authors.initials: JA
authors.lastname: Caraveo-Frescas
authors.forename: M N
authors.initials: MN
authors.lastname: Hedhili
authors.forename: H N
authors.initials: HN
authors.lastname: Alshareef