title: Characterization of SiGe thin films using a laboratory X-ray instrument.
abstract: The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si0.4Ge0.6films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super-thin 2-6 nm layers. For another set of partially relaxed layers, 50-200 nm thick, it is shown that from a high-resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.
authors.affiliation: Rigaku Europe SE, Am Hardtwald 11, Ettlingen, Germany.
authors.forename: Tatjana
authors.initials: T
authors.lastname: Ulyanenkova
authors.forename: Maksym
authors.initials: M
authors.lastname: Myronov
authors.forename: Andrei
authors.initials: A
authors.lastname: Benediktovitch
authors.forename: Alexander
authors.initials: A
authors.lastname: Mikhalychev
authors.forename: John
authors.initials: J
authors.lastname: Halpin
authors.forename: Alex
authors.initials: A
authors.lastname: Ulyanenkov
keywords: high-resolution reciprocal space mapping; misfit dislocation; partly relaxed epitaxial films; thin films