title: High-performance nanowire oxide photo-thin film transistor.
abstract: A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 10(6) test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co, Yongin-Si, Gyeonggi-Do, 446-712, Republic of Korea.
authors.forename: Seung-Eon
authors.initials: SE
authors.lastname: Ahn
authors.forename: Sanghun
authors.initials: S
authors.lastname: Jeon
authors.forename: Youg Woo
authors.initials: YW
authors.lastname: Jeon
authors.forename: Changjung
authors.initials: C
authors.lastname: Kim
authors.forename: Myoung-Jae
authors.initials: MJ
authors.lastname: Lee
authors.forename: Chang-Won
authors.initials: CW
authors.lastname: Lee
authors.forename: Jongbong
authors.initials: J
authors.lastname: Park
authors.forename: Ihun
authors.initials: I
authors.lastname: Song
authors.forename: Arokia
authors.initials: A
authors.lastname: Nathan
authors.forename: Sungsik
authors.initials: S
authors.lastname: Lee
authors.forename: U-In
authors.initials: UI
authors.lastname: Chung
keywords: amorphous oxide semiconductors; displays; photosensors; phototransistors; thin-film transistors; transistors