title: Solution-processed nanoparticle super-float-gated organic field-effect transistor as un-cooled ultraviolet and infrared photon counter.
abstract: High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. This "super-float-gating" mechanism enables very high sensitivity photodetectors with a minimum detectable ultraviolet light intensity of 2.6 photons/μm(2)s at room temperature as well as photon counting capability. Based on same mechansim, infrared photodetectors with lead sulfide NPs as light absorbing materials have also been demonstrated.
authors.affiliation: Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0656, USA.
authors.forename: Yongbo
authors.initials: Y
authors.lastname: Yuan
authors.forename: Qingfeng
authors.initials: Q
authors.lastname: Dong
authors.forename: Bin
authors.initials: B
authors.lastname: Yang
authors.forename: Fawen
authors.initials: F
authors.lastname: Guo
authors.forename: Qi
authors.initials: Q
authors.lastname: Zhang
authors.forename: Ming
authors.initials: M
authors.lastname: Han
authors.forename: Jinsong
authors.initials: J
authors.lastname: Huang
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