title: Solar-blind photodetectors for harsh electronics.
abstract: We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(-2) of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.
authors.affiliation: 1] Institute of Photonics and Optoelectronics & Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC [2].
authors.forename: Dung-Sheng
authors.initials: DS
authors.lastname: Tsai
authors.forename: Wei-Cheng
authors.initials: WC
authors.lastname: Lien
authors.forename: Der-Hsien
authors.initials: DH
authors.lastname: Lien
authors.forename: Kuan-Ming
authors.initials: KM
authors.lastname: Chen
authors.forename: Meng-Lin
authors.initials: ML
authors.lastname: Tsai
authors.forename: Debbie G
authors.initials: DG
authors.lastname: Senesky
authors.forename: Yueh-Chung
authors.initials: YC
authors.lastname: Yu
authors.forename: Albert P
authors.initials: AP
authors.lastname: Pisano
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
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