Polytypic InP nanolaser monolithically integrated on (001) silicon.
On-chip optical interconnects still miss a high-performance laser monolithically integrated on silicon. Here, we demonstrate a silicon-integrated InP nanolaser that operates at room temperature with a low threshold of 1.69 pJ and a large spontaneous emission factor of 0.04. An epitaxial scheme to grow relatively thick InP nanowires on (001) silicon is developed. The zincblende/wurtzite crystal phase polytypism and the formed type II heterostructures are found to promote lasing over a wide wavelength range.
INTEC Department, Ghent University , Sint-Pietersnieuwstraat 41, Ghent 9000, Belgium.
Zhechao
Z
Wang
Bin
B
Tian
Mohanchand
M
Paladugu
Marianna
M
Pantouvaki
Nicolas
N
Le Thomas
Clement
C
Merckling
Weiming
W
Guo
Johan
J
Dekoster
Joris
J
Van Campenhout
Philippe
P
Absil
Dries
D
Van Thourhout