Wide-gap semiconducting graphene from nitrogen-seeded SiC.
All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.
School of Physics, The Georgia Institute of Technology , Atlanta, Georgia 30332-0430, United States.
F
F
Wang
G
G
Liu
S
S
Rothwell
M
M
Nevius
A
A
Tejeda
A
A
Taleb-Ibrahimi
L C
LC
Feldman
P I
PI
Cohen
E H
EH
Conrad
D004581:Electronics; D006108:Graphite / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry; D036103:Nanotechnology; D009584:Nitrogen / Q000737:chemistry; D012666:Semiconductors; D013499:Surface Properties
D006108:Graphite; D009584:Nitrogen