Anodic bonded 2D semiconductors: from synthesis to device fabrication.
Two-dimensional semiconductors are increasingly relevant for emergent applications and devices, notably for hybrid heterostructures with graphene. We fabricate few-layer, large-area (a few tens of microns across) samples of the III-VI semiconductors GaS, GaSe and InSe using the anodic bonding method and characterize them by simultaneous use of optical microscopy, atomic force microscopy and Raman spectroscopy. Two-terminal devices with a gate are constructed to show the feasibility of applications based on these.
Institut de Minéralogie et de Physique des Milieux Condensés, CNRS-UMR7590,Université Pierre et Marie Curie, Paris, F-75252, France. School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000,People's Republic of China.
Zhesheng
Z
Chen
Karim
K
Gacem
Mohamed
M
Boukhicha
Johan
J
Biscaras
Abhay
A
Shukla