Characterizations of Ohmic and Schottky-behaving contacts of a single ZnO nanowire.
Current-voltage and Kelvin probe force microscopy (KPFM) measurements were performed on single ZnO nanowires. Measurements are shown to be strongly correlated with the contact behavior, either Ohmic or diode-like. The ZnO nanowires were obtained by metallo-organic chemical vapor deposition (MOCVD) and contacted using electronic-beam lithography. Depending on the contact geometry, good quality Ohmic contacts (linear I-V behavior) or non-linear (diode-like) contacts were obtained. Current-voltage and KPFM measurements on both types of contacted ZnO nanowires were performed in order to investigate their behavior. A clear correlation could be established between the I-V curve, the electrical potential profile along the device and the nanowire geometry. Some arguments supporting this behavior are given based on technological issues and on depletion region extension. This work will help to better understand the electrical behavior of Ohmic contacts on single ZnO nanowires, for future applications in nanoscale field-effect transistors and nano-photodetectors.
Laboratoire de Recherche en Nanosciences LRN EA4682, Université de Reims Champagne-Ardenne, F-51685 Reims, France.
Bogdan
B
Bercu
Wei
W
Geng
Olivier
O
Simonetti
Sergei
S
Kostcheev
Corinne
C
Sartel
Vincent
V
Sallet
Gilles
G
Lérondel
Michaël
M
Molinari
Louis
L
Giraudet
Christophe
C
Couteau
D004560:Electricity; D018625:Microscopy, Atomic Force; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D013499:Surface Properties; D015034:Zinc Oxide / Q000737:chemistry*
D015034:Zinc Oxide