Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.
Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.
The Nanometer Structure Consortium, Department of Physics, Lund University , P.O. Box 118, 221 00 Lund, Sweden.
Rainer
R
Timm
Olof
O
Persson
David L J
DL
Engberg
Alexander
A
Fian
James L
JL
Webb
Jesper
J
Wallentin
Andreas
A
Jönsson
Magnus T
MT
Borgström
Lars
L
Samuelson
Anders
A
Mikkelsen