Ion implantation of graphene-toward IC compatible technologies.
Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.
School of Materials, The University of Manchester , Manchester M13 9PL, United Kingdom.
U
U
Bangert
W
W
Pierce
D M
DM
Kepaptsoglou
Q
Q
Ramasse
R
R
Zan
M H
MH
Gass
J A
JA
Van den Berg
C B
CB
Boothroyd
J
J
Amani
H
H
Hofsäss
D006108:Graphite / Q000737:chemistry*; D007477:Ions / Q000737:chemistry; D008854:Microscopy, Electron; D049329:Nanostructures; D012666:Semiconductors; D013499:Surface Properties
D007477:Ions; D006108:Graphite