Raman spectra of high- κ dielectric layers investigated with micro-Raman spectroscopy comparison with silicon dioxide.
Three samples with dielectric layers from high- κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high- κ dielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide. The temperature treatment of hafnium oxide shows the evolution of the structure of this material. Raman spectra recorded for as-deposited hafnium oxide are similar to the results obtained for silicon dioxide layer. After thermal treatment especially at higher temperatures (600°C and above), the structure of hafnium oxide becomes similar to the bulk non-densified silicon dioxide.
Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland ; Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland.
P
P
Borowicz
A
A
Taube
W
W
Rzodkiewicz
M
M
Latek
S
S
Gierałtowska
D058266:Dielectric Spectroscopy; D005682:Gadolinium / Q000737:chemistry; D006195:Hafnium; D006358:Hot Temperature; D007811:Lanthanum; D008187:Lutetium / Q000737:chemistry; D008904:Miniaturization; D010087:Oxides; D012825:Silicon / Q000737:chemistry; D012822:Silicon Dioxide / Q000737:chemistry*; D013059:Spectrum Analysis, Raman; D013696:Temperature
D010087:Oxides; C545179:hafnium oxide; C103829:lanthanum oxide; D008187:Lutetium; D007811:Lanthanum; D012822:Silicon Dioxide; D005682:Gadolinium; D006195:Hafnium; D012825:Silicon