Single ZnO microrod ultraviolet photodetector with high photocurrent gain.
An Ag/ZnO microrod/Ag ultraviolet photodetector is fabricated, the ZnO microrod shows a hexagonal whispering gallery cavity structure. Upon a 325 nm ultraviolet illumination, the device shows a high sensitivity of 4 × 10(4) A/W and a high photocurrent gain of 1.5 × 10(5) at 5 V bias. Under different illumination power P, the photocurrent Ilight obeys a power law relation Ilight ∝ P(0.69). The high performance is probably attributed to a Schottky barrier at Ag/ZnO interface and optical whispering gallery mode effect in the ZnO microrod.
State Key Laboratory of Bioelectronics, Southeast University , Nanjing 210096, China.
Jun
J
Dai
Chunxiang
C
Xu
Xiaoyong
X
Xu
Jiyuan
J
Guo
Jitao
J
Li
Gangyi
G
Zhu
Yi
Y
Lin