title: High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.
abstract: GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.
authors.forename: Hao
authors.initials: H
authors.lastname: Guo
authors.forename: Xiong
authors.initials: X
authors.lastname: Zhang
authors.forename: Hongjun
authors.initials: H
authors.lastname: Chen
authors.forename: Peiyuan
authors.initials: P
authors.lastname: Zhang
authors.forename: Honggang
authors.initials: H
authors.lastname: Liu
authors.forename: Hudong
authors.initials: H
authors.lastname: Chang
authors.forename: Wei
authors.initials: W
authors.lastname: Zhao
authors.forename: Qinghua
authors.initials: Q
authors.lastname: Liao
authors.forename: Yiping
authors.initials: Y
authors.lastname: Cui