title: Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architectures.
abstract: Complementary resistive switches based on two anti-serially connected Ag/GeSx/Pt devices were studied. The main focus was placed on the pulse mode properties as typically required in memory and logic applications. A self-designed measurement setup was applied to access each CRS part-cell individually. Our findings reveal the existence of two distinct read voltage regimes enabling both spike read as well as level read approaches. Furthermore, we experimentally verified the theoretically predicted kinetic properties in terms of pulse height vs. switching time relationship. The results obtained by this alternative approach allow a significant improvement of the basic understanding of the interplay between the two part-cells in a complementary resistive switch configuration. Furthermore, from these observations we can deduce a simplified write voltage scheme which is applicable for the considered type of memory cell.
authors.affiliation: Institut für Werkstoffe der Elektrotechnik II (IWE II) & JARA-FIT, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany.
authors.forename: Jan
authors.initials: J
authors.lastname: van den Hurk
authors.forename: Viktor
authors.initials: V
authors.lastname: Havel
authors.forename: Eike
authors.initials: E
authors.lastname: Linn
authors.forename: Rainer
authors.initials: R
authors.lastname: Waser
authors.forename: Ilia
authors.initials: I
authors.lastname: Valov