title: InGaN/GaN microcolumn light-emitting diode arrays with sidewall metal contact.
abstract: In this study, we produce InGaN/GaN microcolumn LED (MC-LED) arrays having nonpolar metal sidewall contacts using a top-down method, where the metal contacts only with the sidewall of the columnar LEDs with an open top for transparency. The trapezoidal profile of the as-etched columns was altered to a rectangular profile through KOH treatment, exposing the nonpolar sidewalls. While the MC-LED with no treatment emitted no light because of the etch-damaged region, the MC-LEDs with KOH treatment exhibited much improved the electrical properties with the much higher shunt resistance due to the removal of the etch-damaged region. The optical output power was strongest for the MC-LED with a 5-min treatment indicating an almost complete removal of the damaged region.
authors.forename: Duk-Jo
authors.initials: DJ
authors.lastname: Kong
authors.forename: Si-Young
authors.initials: SY
authors.lastname: Bae
authors.forename: Chang-Mo
authors.initials: CM
authors.lastname: Kang
authors.forename: Dong-Seon
authors.initials: DS
authors.lastname: Lee