title: Electrical and optical characterization of atomically thin WS₂.
abstract: Atomically thin layers of materials, which are just a few atoms in thickness, present an attractive option for future electronic devices. Herein we characterize, optically and electronically, atomically thin tungsten disulphide (WS2), a layered semiconductor. We provide the distinctive Raman and photoluminescence signatures for single layers, and prepare field-effect transistors where atomically thin WS2 serves as the conductive channel. The transistors present mobilities μ = 10 cm(2) V(-1) s(-1) and exhibit ON/OFF ratios exceeding 100,000. Our results show that WS2 is an attractive option for applications in electronic and optoelectronic devices and pave the way for further studies in this two-dimensional material.
authors.affiliation: School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK. artem.mishchenko@gmail.com.
authors.forename: Thanasis
authors.initials: T
authors.lastname: Georgiou
authors.forename: Huafeng
authors.initials: H
authors.lastname: Yang
authors.forename: Rashid
authors.initials: R
authors.lastname: Jalil
authors.forename: James
authors.initials: J
authors.lastname: Chapman
authors.forename: Kostya S
authors.initials: KS
authors.lastname: Novoselov
authors.forename: Artem
authors.initials: A
authors.lastname: Mishchenko