title: Gate control of electronic phases in a quarter-filled manganite.
abstract: Electron correlation often produces a variety of electrically insulating states caused by self-organization of electrons, which are particularly stable at commensurate fillings. Although collapsing such ordered states by minute external stimuli has been a key strategy toward device applications, it is difficult to access their true electronic phase boundaries due to the necessity of fine-tuning of material parameters. Here, we demonstrate the ambipolar resistance switching in Pr(1-x)Sr(x)MnO3 thin films (x = 0.5; an effectively 1/4-filled state) by quasi-continuous control of the doping level x and band-width W using gate-voltage and magnetic field, enabled by the extreme electric-field formed at the nanoscale interface generated in an electrolyte-gated transistor. An electroresistance peak with unprecedented steepness emerges on approaching a critical point in the x-W phase diagram. The technique opens a new route to Mott-insulator based transistors and to discovering singularities hitherto unnoticed in conventional bulk studies of strongly correlated electron systems.
authors.affiliation: RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Hatano
authors.forename: Y
authors.initials: Y
authors.lastname: Ogimoto
authors.forename: N
authors.initials: N
authors.lastname: Ogawa
authors.forename: M
authors.initials: M
authors.lastname: Nakano
authors.forename: S
authors.initials: S
authors.lastname: Ono
authors.forename: Y
authors.initials: Y
authors.lastname: Tomioka
authors.forename: K
authors.initials: K
authors.lastname: Miyano
authors.forename: Y
authors.initials: Y
authors.lastname: Iwasa
authors.forename: Y
authors.initials: Y
authors.lastname: Tokura