title: p-Type InN nanowires.
abstract: In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth process p-type InN can be realized for the first time by "direct" magnesium (Mg) doping. The presence of Mg acceptor energy levels in InN is confirmed by photoluminescence experiments, and a direct evidence of p-type conduction is demonstrated unambiguously by studying the transfer characteristics of InN nanowire field effect transistors. Moreover, the near-surface Fermi-level of InN can be tuned from nearly intrinsic to p-type degenerate by controlling Mg dopant incorporation, which is in contrast to the commonly observed electron accumulation on the grown surfaces of Mg-doped InN films. First-principle calculation using the VASP electronic package further shows that the p-type surface formed on Mg-doped InN nanowires is highly stable energetically.
authors.affiliation: Department of Electrical and Computer Engineering, McGill University 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: S
authors.initials: S
authors.lastname: Zhao
authors.forename: B H
authors.initials: BH
authors.lastname: Le
authors.forename: D P
authors.initials: DP
authors.lastname: Liu
authors.forename: X D
authors.initials: XD
authors.lastname: Liu
authors.forename: M G
authors.initials: MG
authors.lastname: Kibria
authors.forename: T
authors.initials: T
authors.lastname: Szkopek
authors.forename: H
authors.initials: H
authors.lastname: Guo
authors.forename: Z
authors.initials: Z
authors.lastname: Mi
mesh_terms: D003460:Crystallization; D004583:Electrons; D007204:Indium / Q000737:chemistry*; D008274:Magnesium / Q000737:chemistry; D049329:Nanostructures / Q000737:chemistry; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry*; D009584:Nitrogen / Q000737:chemistry*
chemical_list: D007204:Indium; D008274:Magnesium; D009584:Nitrogen