title: P-side up AlGaInP-based light emitting diodes with dot-patterned GaAs contact layers.
abstract: High-brightness p-side up AlGaInP-based red light emitting diodes (LEDs) with dot-patterned GaAs contact layer and surface rough structure are presented in this article. Initial LED structure of p-GaP/AlGaInP/GaAs is epitaxially grown using metal organic chemical vapor deposition technique. Using novel twice transferring process, the p-GaP layer is remained at the top side as both the current spreading and-window layer. Dot patterned GaAs contact dots are formed between main structure and rear mirror to improve light reflection and current spreading. Moreover, the surface of p-GaP window is further textured by nano-sphere lithography technique for improving the light extraction. Significant improvement in output power is found for AlGaInP LEDs with GaAs contact dots and roughened p-GaP window as compared with those of LEDs with traditional n-side up and p-side up structures without roughened surfaces.
authors.forename: Ray-Hua
authors.initials: RH
authors.lastname: Horng
authors.forename: Bing-Rui
authors.initials: BR
authors.lastname: Wu
authors.forename: Chi-Feng
authors.initials: CF
authors.lastname: Weng
authors.forename: Parvaneh
authors.initials: P
authors.lastname: Ravadgar
authors.forename: Tzong-Ming
authors.initials: TM
authors.lastname: Wu
authors.forename: Sing-Ping
authors.initials: SP
authors.lastname: Wang
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.forename: Tsung-Hsien
authors.initials: TH
authors.lastname: Yang
authors.forename: Yi-Ming
authors.initials: YM
authors.lastname: Chen
authors.forename: Tzu-Chieh
authors.initials: TC
authors.lastname: Hsu
authors.forename: Ai-Sen
authors.initials: AS
authors.lastname: Liu
authors.forename: Dong-Sing
authors.initials: DS
authors.lastname: Wuu