title: 10 Gbps silicon waveguide-integrated infrared avalanche photodiode.
abstract: We have fabricated monolithic silicon avalanche photodiodes capable of 10 Gbps operation at a wavelength of 1550 nm. The photodiodes are entirely CMOS process compatible and comprise a p-i-n junction integrated with a silicon-on-insulator (SOI) rib waveguide. Photo-generation is initiated via the presence of deep levels in the silicon bandgap, introduced by ion implantation and modified by subsequent annealing. The devices show a small signal 3 dB bandwidth of 2.0 GHz as well as an open eye pattern at 10 Gbps. A responsivity of 4.7 ± 0.5 A/W is measured for a 600 µm device at a reverse bias of 40 V.
authors.forename: Jason J
authors.initials: JJ
authors.lastname: Ackert
authors.forename: Abdullah S
authors.initials: AS
authors.lastname: Karar
authors.forename: Dixon J
authors.initials: DJ
authors.lastname: Paez
authors.forename: Paul E
authors.initials: PE
authors.lastname: Jessop
authors.forename: John C
authors.initials: JC
authors.lastname: Cartledge
authors.forename: Andrew P
authors.initials: AP
authors.lastname: Knights