title: Two-step reset in the resistance switching of the Al/TiOx/Cu structure.
abstract: Two-step reset behaviors in the resistance switching properties of the top Al/TiOx/bottom Cu structure were studied. During the electroforming and set steps, two types of conducting filaments composed of Cu and oxygen vacancies (Cu-CF and V(O)-CF) were simultaneously (or sequentially) formed when Al was negatively biased. In the subsequent reset step with the opposite bias polarity, the Cu-CFs ruptured first at ~0.5 V, and formed an intermediate state. The trap-filled V(O)-CFs were transformed into a trap-empty state, resulting in a high-resistance state at ~1 V. Matrix phase in the electrochemical metallization cell can play an active role in resistance switching.
authors.affiliation: School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology , Tianjin 300384, China.
authors.forename: Xing L
authors.initials: XL
authors.lastname: Shao
authors.forename: Jin S
authors.initials: JS
authors.lastname: Zhao
authors.forename: Kai L
authors.initials: KL
authors.lastname: Zhang
authors.forename: Ran
authors.initials: R
authors.lastname: Chen
authors.forename: Kuo
authors.initials: K
authors.lastname: Sun
authors.forename: Chang J
authors.initials: CJ
authors.lastname: Chen
authors.forename: Kai
authors.initials: K
authors.lastname: Liu
authors.forename: Li W
authors.initials: LW
authors.lastname: Zhou
authors.forename: Jian Y
authors.initials: JY
authors.lastname: Wang
authors.forename: Chen M
authors.initials: CM
authors.lastname: Ma
authors.forename: Kyung J
authors.initials: KJ
authors.lastname: Yoon
authors.forename: Cheol S
authors.initials: CS
authors.lastname: Hwang