title: Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers.
abstract: We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300 mm-SOI wafers using CMOS foundry facilities. 950 µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 µm radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point.
authors.forename: D
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: C
authors.initials: C
authors.lastname: Baudot
authors.forename: J-M
authors.initials: JM
authors.lastname: Fédéli
authors.forename: G
authors.initials: G
authors.lastname: Rasigade
authors.forename: N
authors.initials: N
authors.lastname: Vulliet
authors.forename: A
authors.initials: A
authors.lastname: Souhaité
authors.forename: M
authors.initials: M
authors.lastname: Ziebell
authors.forename: P
authors.initials: P
authors.lastname: Rivallin
authors.forename: S
authors.initials: S
authors.lastname: Olivier
authors.forename: P
authors.initials: P
authors.lastname: Crozat
authors.forename: X
authors.initials: X
authors.lastname: Le Roux
authors.forename: D
authors.initials: D
authors.lastname: Bouville
authors.forename: S
authors.initials: S
authors.lastname: Menezo
authors.forename: F
authors.initials: F
authors.lastname: Bœuf
authors.forename: L
authors.initials: L
authors.lastname: Vivien