title: Silicon carbide-based hydrogen gas sensors for high-temperature applications.
abstract: We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.
authors.affiliation: Department of Computer Engineering, Kyungnam University, Changwon 631-701, Korea. sjk1216@kyungnam.ac.kr.
authors.forename: Seongjeen
authors.initials: S
authors.lastname: Kim
authors.forename: Jehoon
authors.initials: J
authors.lastname: Choi
authors.forename: Minsoo
authors.initials: M
authors.lastname: Jung
authors.forename: Sungjae
authors.initials: S
authors.lastname: Joo
authors.forename: Sangchoel
authors.initials: S
authors.lastname: Kim
mesh_terms: D017554:Carbon Compounds, Inorganic / Q000737:chemistry*; D003217:Conductometry / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005740:Gases / Q000032:analysis*; D006358:Hot Temperature; D006859:Hydrogen / Q000032:analysis*; D017655:Silicon Compounds / Q000737:chemistry*; D014025:Titanium / Q000737:chemistry*; D014159:Transducers
chemical_list: D017554:Carbon Compounds, Inorganic; D005740:Gases; D017655:Silicon Compounds; C009495:titanium dioxide; D006859:Hydrogen; D014025:Titanium; C022088:silicon carbide