title: Efficient room-temperature near-infrared detection with solution-processed networked single wall carbon nanotube field effect transistors.
abstract: Efficient room temperature NIR detection with sufficient current gain is made with a solution-processed networked SWNT FET. The high performance NIR-FET with significantly enhanced photocurrent by more than two orders of magnitude compared to dark current in the depleted state is attributed to multiple Schottky barriers in the network, each of which absorb NIR and effectively separate photocarriers to corresponding electrodes.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea.
authors.forename: Ihn
authors.initials: I
authors.lastname: Hwang
authors.forename: Hee June
authors.initials: HJ
authors.lastname: Jung
authors.forename: Sung Hwan
authors.initials: SH
authors.lastname: Cho
authors.forename: Seong Soon
authors.initials: SS
authors.lastname: Jo
authors.forename: Yeon Sik
authors.initials: YS
authors.lastname: Choi
authors.forename: Ji Ho
authors.initials: JH
authors.lastname: Sung
authors.forename: Jae Ho
authors.initials: JH
authors.lastname: Choi
authors.forename: Moon Ho
authors.initials: MH
authors.lastname: Jo
authors.forename: Cheolmin
authors.initials: C
authors.lastname: Park
keywords: Near IR detection; Schottky barriers; field effect transistor detector; networked single wall carbon nanotubes; solution-processed carbon nanotube film