title: 25th anniversary article: key points for high-mobility organic field-effect transistors.
abstract: Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed.
authors.affiliation: Beijing National laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China; Department of Chemistry, Capital Normal University, Beijing, 100037, China.
authors.forename: Huanli
authors.initials: H
authors.lastname: Dong
authors.forename: Xiaolong
authors.initials: X
authors.lastname: Fu
authors.forename: Jie
authors.initials: J
authors.lastname: Liu
authors.forename: Zongrui
authors.initials: Z
authors.lastname: Wang
authors.forename: Wenping
authors.initials: W
authors.lastname: Hu
mesh_terms: D000846:Anniversaries and Special Events; D004583:Electrons; D009930:Organic Chemicals / Q000737:chemistry*; D011108:Polymers / Q000737:chemistry; D011789:Quantum Theory; D014173:Transistors, Electronic
chemical_list: D009930:Organic Chemicals; D011108:Polymers
keywords: high mobility; interface engineering; molecular engineering; organic field-effect transistor; process engineering