title: Differential receivers with highly -uniform MSM Germanium photodetectors capped by SiGe layer.
abstract: Waveguide integrated MSM (metal-semiconductor-metal) Germanium (Ge) photodetectors (PDs) with a SiGe capping layer were exploited for silicon photonics integration. Under optimized epitaxial growth conditions, the capping layer passivated the Ge surface, resulting in sufficiently low dark current of the PDs. In addition, the PDs exhibited a narrower distribution of the dark current than PDs with a Si capping layer, probably due to the lower surface leakage current. Low-noise differential receivers with uniform MSM Ge PDs exhibiting 10 Gbps data transmission were realized.
authors.forename: Makoto
authors.initials: M
authors.lastname: Miura
authors.forename: Junichi
authors.initials: J
authors.lastname: Fujikata
authors.forename: Masataka
authors.initials: M
authors.lastname: Noguchi
authors.forename: Daisuke
authors.initials: D
authors.lastname: Okamoto
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Horikawa
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Arakawa