title: High temperature luminescence of Dy3+ in crystalline silicon in the optical communication and eye-safe spectral regions.
abstract: We report on photoluminescence in the 1.3 and 1.7 μm spectral ranges in silicon doped with dysprosium. This is attributed to the Dy3+ internal transitions between the second Dy3+ excited state and the ground state, and between the third Dy3+ excited state and the ground state. Luminescence is achieved by Dy implantation into Si substrates codoped with boron, to form dislocation loops, and show a strong dependence on fabrication process. The spectra consist of several sharp lines with the strongest emission at 1736 nm, observed up to 200 K. No Dy3+ luminescence is observed in samples without B codoping, showing the paramount importance of dislocation loops to enable the Dy emission.
authors.forename: M A
authors.initials: MA
authors.lastname: Lourenço
authors.forename: Z
authors.initials: Z
authors.lastname: Mustafa
authors.forename: W
authors.initials: W
authors.lastname: Ludurczak
authors.forename: L
authors.initials: L
authors.lastname: Wong
authors.forename: R M
authors.initials: RM
authors.lastname: Gwilliam
authors.forename: K P
authors.initials: KP
authors.lastname: Homewood