title: Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs.
abstract: Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.
authors.affiliation: Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center, Sejong University, Seoul, 143-747, Korea; Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, 060-8628, Japan.
authors.forename: Young Joon
authors.initials: YJ
authors.lastname: Hong
authors.forename: Jae Won
authors.initials: JW
authors.lastname: Yang
authors.forename: Wi Hyoung
authors.initials: WH
authors.lastname: Lee
authors.forename: Rodney S
authors.initials: RS
authors.lastname: Ruoff
authors.forename: Kwang S
authors.initials: KS
authors.lastname: Kim
authors.forename: Takashi
authors.initials: T
authors.lastname: Fukui
mesh_terms: D001152:Arsenicals / Q000737:chemistry; D003460:Crystallization; D006108:Graphite / Q000737:chemistry*; D007204:Indium / Q000737:chemistry; D049329:Nanostructures / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry; D010316:Particle Size; D055672:Static Electricity
chemical_list: D001152:Arsenicals; D007204:Indium; D006108:Graphite; C076773:indium arsenide
keywords: double heterostructures; graphene; indium arsenide; metal-organic vapor-phase epitaxy; van der Waals epitaxy