title: Vibration-assisted crystallization improves organic/dielectric interface in organic thin-film transistors.
abstract: Solution processability of organic semiconductors allows high-throughput fabrication on arbitrary substrates at low-cost, but the films often exhibit low performance. Here, we report on a new method for device fabrication, vibration assisted crystallization (VAC) that produces superior films, which approach the fundamental performance limits shown in corresponding single-crystal measurements.
authors.affiliation: Department of Physics, Wake Forest University, Winston-Salem, NC, 27109, USA.
authors.forename: Peter J
authors.initials: PJ
authors.lastname: Diemer
authors.forename: Christopher R
authors.initials: CR
authors.lastname: Lyle
authors.forename: Yaochuan
authors.initials: Y
authors.lastname: Mei
authors.forename: Christopher
authors.initials: C
authors.lastname: Sutton
authors.forename: Marcia M
authors.initials: MM
authors.lastname: Payne
authors.forename: John E
authors.initials: JE
authors.lastname: Anthony
authors.forename: Veaceslav
authors.initials: V
authors.lastname: Coropceanu
authors.forename: Jean-Luc
authors.initials: JL
authors.lastname: Brédas
authors.forename: Oana D
authors.initials: OD
authors.lastname: Jurchescu
keywords: high mobility; organic field-effect transistors; organic semiconductors; traps