title: Fabrication of highly transparent and conductive indium-tin oxide thin films with a high figure of merit via solution processing.
abstract: Deposition technology of transparent conducting oxide (TCO) thin films is critical for high performance of optoelectronic devices. Solution-based fabrication methods can result in substantial cost reduction and enable broad applicability of the TCO thin films. Here we report a simple and highly effective solution process to fabricate indium-tin oxide (ITO) thin films with high uniformity, reproducibility, and scalability. The ITO films are highly transparent (90.2%) and conductive (ρ = 7.2 × 10(-4) Ω·cm) with the highest figure of merit (1.19 × 10(-2) Ω(-1)) among all the solution-processed ITO films reported to date. The high transparency and figure of merit, low sheet resistance (30 Ω/sq), and roughness (1.14 nm) are comparable with the benchmark properties of dc sputtering and can meet the requirements for most practical applications.
authors.affiliation: Department of Chemistry, National University of Singapore , 3 Science Drive 3, Singapore 117543.
authors.forename: Zhangxian
authors.initials: Z
authors.lastname: Chen
authors.forename: Wanchao
authors.initials: W
authors.lastname: Li
authors.forename: Ran
authors.initials: R
authors.lastname: Li
authors.forename: Yunfeng
authors.initials: Y
authors.lastname: Zhang
authors.forename: Guoqin
authors.initials: G
authors.lastname: Xu
authors.forename: Hansong
authors.initials: H
authors.lastname: Cheng