title: Voltage-controlled nonvolatile molecular memory of an azobenzene monolayer through solution-processed reduced graphene oxide contacts.
abstract: The solution-processed fabrication of an azobenzene (ABC10) monolayer-based nonvolatile memory device on a reduced graphene oxide (rGO) electrode is successfully accomplished. Trans--cis isomerizations of ABC10 between two rGO electrodes in a crossbar device are controlled by applied voltage. An rGO soft-contact top electrode plays an important role in the conformational-change-dependent conductance switching process of an ABC10 monolayer.
authors.affiliation: Department of Chemistry, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do, Republic of Korea.
authors.forename: Misook
authors.initials: M
authors.lastname: Min
authors.forename: Sohyeon
authors.initials: S
authors.lastname: Seo
authors.forename: Sae Mi
authors.initials: SM
authors.lastname: Lee
authors.forename: Hyoyoung
authors.initials: H
authors.lastname: Lee
mesh_terms: D001391:Azo Compounds / Q000737:chemistry*; D055664:Electrochemical Techniques; D004566:Electrodes; D006108:Graphite / Q000737:chemistry*; D007536:Isomerism; D018625:Microscopy, Atomic Force; D010084:Oxidation-Reduction; D010087:Oxides / Q000737:chemistry
chemical_list: D001391:Azo Compounds; D010087:Oxides; D006108:Graphite; C009850:azobenzene
keywords: azobenzenes; molecular electronics; reduced graphene oxide; self-assembled monolayers; voltage-controlled molecular memory