title: Polarity-driven nonuniform composition in InGaAs nanowires.
abstract: Manipulating the composition and morphology of semiconductor nanowires in a precisely controlled fashion is critical in developing nanowire devices. This is particularly true for ternary III-V nanowires. Many studies have shown the complexities within those nanowires. Here we report our findings of compositional irregularity in the shells of core-shell InGaAs nanowires with zinc-blende structure. Such an effect is caused by the crystal polarity within III-V zinc-blende lattice and the one-dimensional nature of nanowires that allows the formation of opposite polar surfaces simultaneously on the nanowire sidewalls. This polarity-driven effect in III-V nanowires may be utilized in manipulating the composition and morphology of III-V nanowires for device applications.
authors.affiliation: Materials Engineering, The University of Queensland , Brisbane, QLD 4072, Australia.
authors.forename: Ya-Nan
authors.initials: YN
authors.lastname: Guo
authors.forename: Timothy
authors.initials: T
authors.lastname: Burgess
authors.forename: Qiang
authors.initials: Q
authors.lastname: Gao
authors.forename: H Hoe
authors.initials: HH
authors.lastname: Tan
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish
authors.forename: Jin
authors.initials: J
authors.lastname: Zou