title: Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.
abstract: Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switching memory (RRAM). Here, the RESET switching of HfO2-based RRAM was statistically investigated in terms of the CF conductance evolution. The RESET usually combines an abrupt conductance drop with a progressive phase ending with the complete CF rupture. RESET1 and RESET2 events, corresponding to the initial and final phase of RESET, are found to be controlled by the voltage and power in the CF, respectively. A Monte Carlo simulator based on the thermal dissolution model of unipolar RESET reproduces all of the experimental observations. The results contribute to an improved physics-based understanding on the switching mechanisms and provide additional support to the thermal dissolution model.
authors.affiliation: 1] Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China [2] Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain.
authors.forename: Shibing
authors.initials: S
authors.lastname: Long
authors.forename: Luca
authors.initials: L
authors.lastname: Perniola
authors.forename: Carlo
authors.initials: C
authors.lastname: Cagli
authors.forename: Julien
authors.initials: J
authors.lastname: Buckley
authors.forename: Xiaojuan
authors.initials: X
authors.lastname: Lian
authors.forename: Enrique
authors.initials: E
authors.lastname: Miranda
authors.forename: Feng
authors.initials: F
authors.lastname: Pan
authors.forename: Ming
authors.initials: M
authors.lastname: Liu
authors.forename: Jordi
authors.initials: J
authors.lastname: Suñé