title: Solution-processable n-type semiconductors based on unsymmetrical naphthalene imides: synthesis, characterization, and applications in field-effect transistors.
abstract: A series of unsymmetrical naphthalene imide derivatives (1-5) with high electron affinity was synthesized and used in n-channel organic field-effect transistors (OFETs). They have very good solubility in common organic solvents and good thermal stability up to 320 °C. Their photophysical, electrochemical, and thermal properties were investigated in detail. They showed low-lying LUMO energy levels from -3.90 to -4.15 eV owing to a strong electron-withdrawing character. Solution-processed thin-film OFETs based on 1-4 were measured in both N2 and air. They all showed n-type FET behavior. The liquid-crystalline compounds 1a, 1b, and 3 showed good performance owing to the self-healing properties of the film in the liquid-crystal phase. Compound 3 has an electron mobility of up to 0.016 cm(2)V(-1) s(-1) and current on/off ratios of 10(4)-10(5).
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543 (Singapore), Fax: (+65) 6779-1691.
authors.forename: Jinjun
authors.initials: J
authors.lastname: Shao
authors.forename: Jingjing
authors.initials: J
authors.lastname: Chang
authors.forename: Chunyan
authors.initials: C
authors.lastname: Chi
keywords: electrochemistry; naphthalene imides; photophysics; semiconductors; thin films