title: Epsilon-near-zero strong coupling in metamaterial-semiconductor hybrid structures.
abstract: We present a new type of electrically tunable strong coupling between planar metamaterials and epsilon-near-zero modes that exist in a doped semiconductor nanolayer. The use of doped semiconductors makes this strong coupling tunable over a wide range of wavelengths through the use of different doping densities. We also modulate this coupling by depleting the doped semiconductor layer electrically. Our hybrid approach incorporates strong optical interactions into a highly tunable, integrated device platform.
authors.affiliation: Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Young Chul
authors.initials: YC
authors.lastname: Jun
authors.forename: John
authors.initials: J
authors.lastname: Reno
authors.forename: Troy
authors.initials: T
authors.lastname: Ribaudo
authors.forename: Eric
authors.initials: E
authors.lastname: Shaner
authors.forename: Jean-Jacques
authors.initials: JJ
authors.lastname: Greffet
authors.forename: Simon
authors.initials: S
authors.lastname: Vassant
authors.forename: Francois
authors.initials: F
authors.lastname: Marquier
authors.forename: Mike
authors.initials: M
authors.lastname: Sinclair
authors.forename: Igal
authors.initials: I
authors.lastname: Brener
mesh_terms: D008027:Light; D049329:Nanostructures / Q000737:chemistry*; D055095:Optics and Photonics / Q000295:instrumentation* / Q000379:methods; D012031:Refractometry; D012542:Scattering, Radiation; D012666:Semiconductors