title: Large-gap quantum spin Hall insulators in tin films.
abstract: The search for large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Γ point, similar to the case of a HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.
authors.affiliation: Department of Physics, McCullough Building, Stanford University, Stanford, California 94305-4045, USA and Institute for Advanced Study, Tsinghua University, Beijing 100084, People's Republic of China.
authors.forename: Yong
authors.initials: Y
authors.lastname: Xu
authors.forename: Binghai
authors.initials: B
authors.lastname: Yan
authors.forename: Hai-Jun
authors.initials: HJ
authors.lastname: Zhang
authors.forename: Jing
authors.initials: J
authors.lastname: Wang
authors.forename: Gang
authors.initials: G
authors.lastname: Xu
authors.forename: Peizhe
authors.initials: P
authors.lastname: Tang
authors.forename: Wenhui
authors.initials: W
authors.lastname: Duan
authors.forename: Shou-Cheng
authors.initials: SC
authors.lastname: Zhang