title: A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory.
abstract: Stackable select devices such as the oxide p-n junction diode and the Schottky diode (one-way switch) have been proposed for non-volatile unipolar resistive switching devices; however, bidirectional select devices (or two-way switch) need to be developed for bipolar resistive switching devices. Here we report on a fully stackable switching device that solves several problems including current density, temperature stability, cycling endurance and cycle distribution. We demonstrate that the threshold switching device based on As-Ge-Te-Si material significantly improves cycling endurance performance by reactive nitrogen deposition and nitrogen plasma hardening. Formation of the thin Si₃N₄ glass layer by the plasma treatment retards tellurium diffusion during cycling. Scalability of threshold switching devices is measured down to 30 nm scale with extremely fast switching speed of ~2 ns.
authors.affiliation: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, Gyeonggi-do 446-712, Korea.
authors.forename: Myoung-Jae
authors.initials: MJ
authors.lastname: Lee
authors.forename: Dongsoo
authors.initials: D
authors.lastname: Lee
authors.forename: Seong-Ho
authors.initials: SH
authors.lastname: Cho
authors.forename: Ji-Hyun
authors.initials: JH
authors.lastname: Hur
authors.forename: Sang-Moon
authors.initials: SM
authors.lastname: Lee
authors.forename: David H
authors.initials: DH
authors.lastname: Seo
authors.forename: Dong-Sik
authors.initials: DS
authors.lastname: Kim
authors.forename: Moon-Seung
authors.initials: MS
authors.lastname: Yang
authors.forename: Sunghun
authors.initials: S
authors.lastname: Lee
authors.forename: Euichul
authors.initials: E
authors.lastname: Hwang
authors.forename: Mohammad Rakib
authors.initials: MR
authors.lastname: Uddin
authors.forename: Hojung
authors.initials: H
authors.lastname: Kim
authors.forename: U-In
authors.initials: UI
authors.lastname: Chung
authors.forename: Youngsoo
authors.initials: Y
authors.lastname: Park
authors.forename: In-Kyeong
authors.initials: IK
authors.lastname: Yoo