title: A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials.
abstract: A general method using a biased atomic force microscopy tip that allows a qualitative, fast, and reliable determination of key electronic properties such as metallic, n-, or p-doped characteristics has been reported for the first time. This method eliminates the detrimental effect of contact in the traditional transport measurement and is much simpler than the common-electrostatic force microscopy detection method, thus providing a powerful tool for fast characterizations of nanomaterials.
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Lili
authors.initials: L
authors.lastname: Jiang
authors.forename: Bin
authors.initials: B
authors.lastname: Wu
authors.forename: Hongtao
authors.initials: H
authors.lastname: Liu
authors.forename: Yuan
authors.initials: Y
authors.lastname: Huang
authors.forename: Jianyi
authors.initials: J
authors.lastname: Chen
authors.forename: Dechao
authors.initials: D
authors.lastname: Geng
authors.forename: Hongjun
authors.initials: H
authors.lastname: Gao
authors.forename: Yunqi
authors.initials: Y
authors.lastname: Liu
keywords: asymmetric polarization; atomic force microscopy; charge carrier type; two-dimensional materials