title: [Strain in GaN epi-layer grown by hydride vapor phase epitaxy].
abstract: In the present paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) was investigated by means of high-resolution X-ray diffraction (HRXRD), Raman spectra and photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of -10(-4) and 10(-4), respectively) and the hydrostatic strain component (of the order of -10(-5)) were extracted from HRXRD measurements. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain.
authors.affiliation: School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China. zhanhuiliu@gmail.com
authors.forename: Zhan-Hui
authors.initials: ZH
authors.lastname: Liu
authors.forename: Xiang-Qian
authors.initials: XQ
authors.lastname: Xiu
authors.forename: Li-Li
authors.initials: LL
authors.lastname: Zhang
authors.forename: Rong
authors.initials: R
authors.lastname: Zhang
authors.forename: Ya-Nan
authors.initials: YN
authors.lastname: Zhang
authors.forename: Jing
authors.initials: J
authors.lastname: Su
authors.forename: Zi-Li
authors.initials: ZL
authors.lastname: Xie
authors.forename: Bin
authors.initials: B
authors.lastname: Liu
authors.forename: Yun
authors.initials: Y
authors.lastname: Shan