title: Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy.
abstract: Indium phosphide nanowires were grown by metalorganic molecular beam epitaxy using the selective-area vapor-liquid-solid method. We show experimentally and theoretically that the size of the annular opening around the nanowire has a major impact on nanowire growth rate. In addition, we observed a considerable reduction of the growth rate in dense two-dimensional arrays, in agreement with a calculation of the shadowing of the scattered precursors. Due to the impact of these effects on growth, they should be considered during selective-area vapor-liquid-solid nanowire epitaxy.
authors.affiliation: Electrical Engineering Faculty, Technion-Israel Institute of Technology, Haifa 32000, Israel.
authors.forename: A
authors.initials: A
authors.lastname: Kelrich
authors.forename: Y
authors.initials: Y
authors.lastname: Calahorra
authors.forename: Y
authors.initials: Y
authors.lastname: Greenberg
authors.forename: A
authors.initials: A
authors.lastname: Gavrilov
authors.forename: S
authors.initials: S
authors.lastname: Cohen
authors.forename: D
authors.initials: D
authors.lastname: Ritter