title: Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack.
abstract: A new touch sensor device has been demonstrated with molybdenum disulfide (MoS2) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE). The performance of two device stack structures, metal/PVDF-TrFE/MoS2 (MPM) and metal/PVDF-TrFE/Al2O3/MoS2 (MPAM), were compared as a function of the thickness of PVDF-TrFE and Al2O3. The sensitivity of the touch sensor has been improved by two orders of magnitude by reducing the charge scattering and enhancing the passivation effects using a thin Al2O3 interfacial layer. Reliable switching behavior has been demonstrated up to 120 touch press cycles.
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
authors.forename: Woojin
authors.initials: W
authors.lastname: Park
authors.forename: Jin Ho
authors.initials: JH
authors.lastname: Yang
authors.forename: Chang Goo
authors.initials: CG
authors.lastname: Kang
authors.forename: Young Gon
authors.initials: YG
authors.lastname: Lee
authors.forename: Hyeon Jun
authors.initials: HJ
authors.lastname: Hwang
authors.forename: Chunhum
authors.initials: C
authors.lastname: Cho
authors.forename: Sung Kwan
authors.initials: SK
authors.lastname: Lim
authors.forename: Soo Cheol
authors.initials: SC
authors.lastname: Kang
authors.forename: Woong-Ki
authors.initials: WK
authors.lastname: Hong
authors.forename: Sang Kyung
authors.initials: SK
authors.lastname: Lee
authors.forename: Sangchul
authors.initials: S
authors.lastname: Lee
authors.forename: Byoung Hun
authors.initials: BH
authors.lastname: Lee