title: Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes.
abstract: Size-controllable p-GaN hexagonal nanopyramids (HnPs)-photonic crystal (PhC) structures were selectively grown on flat p-GaN layer for the elimination of total internal reflection of light-emitting diodes (LEDs). The LEDs with HnPs-PhC of 46.3% bottom fill factor (PhC lattice constant is 730 nm) showed an improved light output power by 99.9% at forward current of 350 mA compared to the reference LEDs with flat p-GaN layer. We confirmed the effect of HnPs-PhC with different bottom fill factors and the effect of nanopyramid-shaped and nanocolumn-shaped PhC on the light-extraction of LEDs was also investigated by using three-dimensional finite-difference time-domain simulations.
authors.forename: Chengxiao
authors.initials: C
authors.lastname: Du
authors.forename: Tongbo
authors.initials: T
authors.lastname: Wei
authors.forename: Haiyang
authors.initials: H
authors.lastname: Zheng
authors.forename: Liancheng
authors.initials: L
authors.lastname: Wang
authors.forename: Chong
authors.initials: C
authors.lastname: Geng
authors.forename: Qingfeng
authors.initials: Q
authors.lastname: Yan
authors.forename: Junxi
authors.initials: J
authors.lastname: Wang
authors.forename: Jinmin
authors.initials: J
authors.lastname: Li