title: Two-dimensional carrier distribution in top-gate polymer field-effect transistors: correlation between width of density of localized states and Urbach energy.
abstract: A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors. A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.
authors.affiliation: Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, United Kingdom.
authors.forename: Auke J
authors.initials: AJ
authors.lastname: Kronemeijer
authors.forename: Vincenzo
authors.initials: V
authors.lastname: Pecunia
authors.forename: Deepak
authors.initials: D
authors.lastname: Venkateshvaran
authors.forename: Mark
authors.initials: M
authors.lastname: Nikolka
authors.forename: Aditya
authors.initials: A
authors.lastname: Sadhanala
authors.forename: John
authors.initials: J
authors.lastname: Moriarty
authors.forename: Monika
authors.initials: M
authors.lastname: Szumilo
authors.forename: Henning
authors.initials: H
authors.lastname: Sirringhaus
keywords: carrier distribution; density of states; disorder; field-effect transistors; organic electronics; urbach energy