title: Elemental topological insulator with tunable Fermi level: strained α-Sn on InSb(001).
abstract: We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.
authors.affiliation: Physikalisches Institut und Röntgen Center for Complex Materials Systems, Universität Würzburg, 97074 Würzburg, Germany.
authors.forename: A
authors.initials: A
authors.lastname: Barfuss
authors.forename: L
authors.initials: L
authors.lastname: Dudy
authors.forename: M R
authors.initials: MR
authors.lastname: Scholz
authors.forename: H
authors.initials: H
authors.lastname: Roth
authors.forename: P
authors.initials: P
authors.lastname: Höpfner
authors.forename: C
authors.initials: C
authors.lastname: Blumenstein
authors.forename: G
authors.initials: G
authors.lastname: Landolt
authors.forename: J H
authors.initials: JH
authors.lastname: Dil
authors.forename: N C
authors.initials: NC
authors.lastname: Plumb
authors.forename: M
authors.initials: M
authors.lastname: Radovic
authors.forename: A
authors.initials: A
authors.lastname: Bostwick
authors.forename: E
authors.initials: E
authors.lastname: Rotenberg
authors.forename: A
authors.initials: A
authors.lastname: Fleszar
authors.forename: G
authors.initials: G
authors.lastname: Bihlmayer
authors.forename: D
authors.initials: D
authors.lastname: Wortmann
authors.forename: G
authors.initials: G
authors.lastname: Li
authors.forename: W
authors.initials: W
authors.lastname: Hanke
authors.forename: R
authors.initials: R
authors.lastname: Claessen
authors.forename: J
authors.initials: J
authors.lastname: Schäfer