title: Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure.
abstract: In spite of much work on topological insulators (TIs), systematic experiments for TI/TI heterostructures remain absent. We grow a high quality heterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs of Bi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLs Bi2Te3. All three films are grown on insulating sapphire (0001) substrates by molecular beam epitaxy (MBE). In situ angle-resolved photoemission spectroscopy (ARPES) provides direct evidence that the surface state of 1 QL Bi2Se3/19 QLs Bi2Te3 heterostructure is similar to the surface state of the 20 QLs Bi2Se3 and different with that of the 20 QLs Bi2Te3. In ex situ transport measurements, the observed linear magnetoresistance (MR) and weak antilocalization (WAL) of the hybrid heterostructure are similar to that of the pure Bi2Se3 film and not the Bi2Te3 film. This suggests that the single Bi2Se3 layer on top of 19 QLs Bi2Te3 dominates its transport properties.
authors.affiliation: 1] International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China [2].
authors.forename: Yanfei
authors.initials: Y
authors.lastname: Zhao
authors.forename: Cui-Zu
authors.initials: CZ
authors.lastname: Chang
authors.forename: Ying
authors.initials: Y
authors.lastname: Jiang
authors.forename: Ashley
authors.initials: A
authors.lastname: DaSilva
authors.forename: Yi
authors.initials: Y
authors.lastname: Sun
authors.forename: Huichao
authors.initials: H
authors.lastname: Wang
authors.forename: Ying
authors.initials: Y
authors.lastname: Xing
authors.forename: Yong
authors.initials: Y
authors.lastname: Wang
authors.forename: Ke
authors.initials: K
authors.lastname: He
authors.forename: Xucun
authors.initials: X
authors.lastname: Ma
authors.forename: Qi-Kun
authors.initials: QK
authors.lastname: Xue
authors.forename: Jian
authors.initials: J
authors.lastname: Wang