title: One-dimensional electrical contact to a two-dimensional material.
abstract: Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.
authors.affiliation: Department of Electrical Engineering, Columbia University, New York, NY 10027, USA.
authors.forename: L
authors.initials: L
authors.lastname: Wang
authors.forename: I
authors.initials: I
authors.lastname: Meric
authors.forename: P Y
authors.initials: PY
authors.lastname: Huang
authors.forename: Q
authors.initials: Q
authors.lastname: Gao
authors.forename: Y
authors.initials: Y
authors.lastname: Gao
authors.forename: H
authors.initials: H
authors.lastname: Tran
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authors.initials: T
authors.lastname: Taniguchi
authors.forename: K
authors.initials: K
authors.lastname: Watanabe
authors.forename: L M
authors.initials: LM
authors.lastname: Campos
authors.forename: D A
authors.initials: DA
authors.lastname: Muller
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authors.initials: J
authors.lastname: Guo
authors.forename: P
authors.initials: P
authors.lastname: Kim
authors.forename: J
authors.initials: J
authors.lastname: Hone
authors.forename: K L
authors.initials: KL
authors.lastname: Shepard
authors.forename: C R
authors.initials: CR
authors.lastname: Dean