title: Interface-induced modulation of charge and polarization in thin film Fe(3)O(4).
abstract: Charge and polarization modulations in Fe3 O4 are controlled by taking advantage of interfacial strain effects. The feasibility of oxidation state control by strain modification is demonstrated and it is shown that this approach offers a stable configuration at room temperature. Direct evidence of how a local strain field changes the atomic coordination and introduces atomic displacements leading to polarization of Fe ions is presented.
authors.affiliation: EMAT, Electron Microscopy for Materials Science, University of Antwerp, Belgium.
authors.forename: He
authors.initials: H
authors.lastname: Tian
authors.forename: Jo
authors.initials: J
authors.lastname: Verbeeck
authors.forename: Sebastian
authors.initials: S
authors.lastname: Brück
authors.forename: Markus
authors.initials: M
authors.lastname: Paul
authors.forename: Dominik
authors.initials: D
authors.lastname: Kufer
authors.forename: Michael
authors.initials: M
authors.lastname: Sing
authors.forename: Ralph
authors.initials: R
authors.lastname: Claessen
authors.forename: Gustaaf Van
authors.initials: GV
authors.lastname: Tendeloo
keywords: ABF STEM; charge modulation; monochromated EELS; oxide interface; polarization modulation