title: Optical investigation of strong exciton localization in high Al composition AlxGa₁-xN alloys.
abstract: The exciton localization in wurtzite AlxGa₁-xN alloys with x varying from 0.41 to 0.63 has been studied by deep-ultraviolet photoluminescence (PL) spectroscopy and picosecond time-resolved PL spectroscopy. Obvious S-shape temperature dependence was observed indicating that the strong exciton localization can be formed in high Al composition AlxGa₁-xN alloys. It was also found that the Al composition dependence of exciton localization energy of AlGaN alloys is inconsistent with that of the excitonic linewidth. We contribute the inconsistency to the strong zero-dimensional exciton localization.
authors.forename: Shunfei
authors.initials: S
authors.lastname: Fan
authors.forename: Zhixin
authors.initials: Z
authors.lastname: Qin
authors.forename: Chenguang
authors.initials: C
authors.lastname: He
authors.forename: Mengjun
authors.initials: M
authors.lastname: Hou
authors.forename: Xinqiang
authors.initials: X
authors.lastname: Wang
authors.forename: Bo
authors.initials: B
authors.lastname: Shen
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.forename: Weiying
authors.initials: W
authors.lastname: Wang
authors.forename: Defeng
authors.initials: D
authors.lastname: Mao
authors.forename: Peng
authors.initials: P
authors.lastname: Jin
authors.forename: Jianchang
authors.initials: J
authors.lastname: Yan
authors.forename: Peng
authors.initials: P
authors.lastname: Dong