title: Observation of huge surface hole mobility in the topological insulator Bi(0.91)Sb(0.09) (111).
abstract: We report the first direct measurement of transport properties of surface states in the topological insulator Bi(0.91)Sb(0.09) (111) from the weak-field Hall effect and Shubnikov-de Haas oscillations. We find that the holelike surface band displays an unexpectedly high mobility 23,000-85,000 cm(2)/V s, which is the highest mobility so far reported in bismuth-based topological insulators. This result provides the first quantitative assessment of the effect of alloy disorder on the mobility of surface states in topological insulators. We show that the 9% alloy disorder decreases the mobility of surface states by a factor of less than 2.3.
authors.affiliation: Lawrence Livermore National Laboratory, Livermore, California 94550, USA.
authors.forename: Dong-Xia
authors.initials: DX
authors.lastname: Qu
authors.forename: Sarah K
authors.initials: SK
authors.lastname: Roberts
authors.forename: George F
authors.initials: GF
authors.lastname: Chapline