title: Near infrared ray annealing effects on the properties of Al-doped ZnO thin films prepared by spin-coating method.
abstract: In this research, we will present Al doped ZnO thin films for transparent conducting oxide applications. Aluminum doped zinc oxide (AZO) thin films have been deposited on the glass substrates by sol-gel spin-coating method using zinc acetate dehydrate (Zn(CH3COO)2 2H2O) and aluminum chloride hexahydrate (AlCl3 x 6H2O) as cation sources. In this study, we investigated the effects of near infrared ray (NIR) annealing on the structural, optical and electrical characteristics of the AZO thin films. The experimental results showed that AZO thin films have a hexagonal wurtzite crystal structure and had a good transmittance higher than 85% within the visible wavelength region. It was also found that the additional energy of NIR helps to improve the electrical properties of Al doped ZnO transparent conducting oxides.
authors.affiliation: Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 139-701, Korea.
authors.forename: Min-Chul
authors.initials: MC
authors.lastname: Jun
authors.forename: Sang-Uk
authors.initials: SU
authors.lastname: Park
authors.forename: Moon-Soon
authors.initials: MS
authors.lastname: Chae
authors.forename: Dong-Jin
authors.initials: DJ
authors.lastname: Shin
authors.forename: Jae-Geun
authors.initials: JG
authors.lastname: Ha
authors.forename: Sang-Mo
authors.initials: SM
authors.lastname: Koo
authors.forename: Kyung-Ju
authors.initials: KJ
authors.lastname: Lee
authors.forename: Byung-Moo
authors.initials: BM
authors.lastname: Moon
authors.forename: Chi-Young
authors.initials: CY
authors.lastname: Song
authors.forename: Jung-Hyuk
authors.initials: JH
authors.lastname: Koh