title: Fabrication and RF characterization of a single nickel silicide nanowire for an interconnect.
abstract: We fabricated a nickel silicide nanowire (NiSi NW) device with a low thermal budget and characterized it by measuring the S-parameters in the radio-frequency (RF) regime. A single silicon nanowire (Si NW) was assembled on a substrate with a two-port coplanar waveguide structure using the dielectrophoresis method. Then, the Si NW on the device was perfectly transformed into a NiSi NW. The NiSi NW device was characterized by performing measurements in the DC and RF regimes. The transformation into the NiSi NW resulted in reducing about three-order more the resistance than before the transformation. Hence, the transmission of the NiSi NW device was 25 dB higher than that of the Si NW device up to gigahertz. We also discussed extracting the intrinsic properties of the NiSi NW by using de-embedding, circuit modeling, and simulation.
authors.affiliation: Research Center for Time-Domain Nano-Functional Device, Samsung Advanced Institute of Technology, Giheung, Yong-ln, Gyeonggi 446-712, Korea.
authors.forename: Dongjin
authors.initials: D
authors.lastname: Lee
authors.forename: Myunggil
authors.initials: M
authors.lastname: Kang
authors.forename: Suheon
authors.initials: S
authors.lastname: Hong
authors.forename: Donghoon
authors.initials: D
authors.lastname: Hwang
authors.forename: Keun
authors.initials: K
authors.lastname: Heo
authors.forename: Won-Jae
authors.initials: WJ
authors.lastname: Joo
authors.forename: Sangsig
authors.initials: S
authors.lastname: Kim
authors.forename: Dongmok
authors.initials: D
authors.lastname: Whang
authors.forename: Sung Woo
authors.initials: SW
authors.lastname: Hwang