title: Solution-processed anthradithiophene-PCBM p-n junction photovoltaic cells fabricated by using the photoprecursor method.
abstract: P-n junction solar cells based on anthradithiophene (ADT) as a p-type semiconductor were fabricated by using the photoprecursor method in which an α-diketone-type precursor was spin-coated and then transformed to ADT in situ by photoirradiation. Combination with PC71BM as an n-layer material led to 1.54% photoconversion efficiency.
authors.affiliation: Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Ikoma, Nara 630-0192, Japan. hyamada@ms.naist.jp.
authors.forename: Hiroko
authors.initials: H
authors.lastname: Yamada
authors.forename: Yuji
authors.initials: Y
authors.lastname: Yamaguchi
authors.forename: Ryuta
authors.initials: R
authors.lastname: Katoh
authors.forename: Takao
authors.initials: T
authors.lastname: Motoyama
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Aotake
authors.forename: Daiki
authors.initials: D
authors.lastname: Kuzuhara
authors.forename: Mitsuharu
authors.initials: M
authors.lastname: Suzuki
authors.forename: Tetsuo
authors.initials: T
authors.lastname: Okujima
authors.forename: Hidemitsu
authors.initials: H
authors.lastname: Uno
authors.forename: Naoki
authors.initials: N
authors.lastname: Aratani
authors.forename: Ken-ichi
authors.initials: K
authors.lastname: Nakayama