title: The effect of trapped charge on silicon nanowire pseudo-MOSFETs.
abstract: The effects of organic molecules grafted on top of silicon nanowires are modeled as the oxide trap charges (Qot) and interface trap charges (Qit). The device investigated here is a pseudo-MOSFET with a thick bottom oxide (200 nm) and only a thin native oxide (5 nm) on top. With Qot = -5.0 x 10(11) cm(-2) and the U-shaped distribution of interface trap density (Dit) as a function of trap energy (Et), the structures are reproduced through the conventional technology computer aided design (TCAD) simulation tool, and the channel is imaginarily divided into several sections (5 x 5 regions) to apply the localized traps. The electrical parameters are extracted from the each part to quantitatively compare their effectiveness. The local position of the grafted molecules, modeled by these charges, is shown to result in strong variations in the relative change in the threshold voltage and subthreshold swing. These variations are explained by the surface depletion and scattering near the edges of the etched device and the series resistance effect.
authors.affiliation: Research Center for Time-Domain Nano-Functional Devices, Samsung Advanced Institute of Technology, Giheung, Yongin, Gyeonggi, 446-712, Korea.
authors.forename: Incheol
authors.initials: I
authors.lastname: Nam
authors.forename: Minsuk
authors.initials: M
authors.lastname: Kim
authors.forename: Syed Faraz
authors.initials: SF
authors.lastname: Najam
authors.forename: Eunhong
authors.initials: E
authors.lastname: Lee
authors.forename: Sungwoo
authors.initials: S
authors.lastname: Hwang
authors.forename: Sangsig
authors.initials: S
authors.lastname: Kim