title: Anomalous resistance overshoot in the integer quantum Hall effect.
abstract: In this work we report on experiments performed on smooth edge-narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels.
authors.affiliation: Department of Physics, Istanbul University, Istanbul, 34134 Turkey.
authors.forename: E M
authors.initials: EM
authors.lastname: Kendirlik
authors.forename: S
authors.initials: S
authors.lastname: Sirt
authors.forename: S B
authors.initials: SB
authors.lastname: Kalkan
authors.forename: W
authors.initials: W
authors.lastname: Dietsche
authors.forename: W
authors.initials: W
authors.lastname: Wegscheider
authors.forename: S
authors.initials: S
authors.lastname: Ludwig
authors.forename: A
authors.initials: A
authors.lastname: Siddiki