title: Photoluminescence properties of defect emissions in Al-doped ZnO nanorod array thin films.
abstract: The power- and temperature-dependent photoluminescence properties of Al-doped ZnO nanorod array thin films grown by the hydrothermal method were investigated. The intensities of both the near-band-edge emission (NBE) and deep-level emission (DLE) as well as the overall spectral line shape were strongly affected by the excitation power. At low excitation power, the blue emission was found to show the highest intensity among the different emission lights. A low-temperature photoluminescence analysis revealed the bound-exciton-related luminescence peak at 3.362 eV. The dependence of peak energy with the excitation power indicates that these DLE processes are generated by DAP transitions. The overall intensity of DLE was found to decrease as the temperature increases. With regard to the blue emission (around 2.52 eV), it showed a well-pronounced shoulder at 200 K. The activation energy for this blue emission was 51.93 meV, which corresponds to the thermal dissociation energy required for the donor-acceptor pair transitions.
authors.affiliation: Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea.
authors.forename: Soaram
authors.initials: S
authors.lastname: Kim
authors.forename: Giwoong
authors.initials: G
authors.lastname: Nam
authors.forename: Hyunggil
authors.initials: H
authors.lastname: Park
authors.forename: Hyunsik
authors.initials: H
authors.lastname: Yoon
authors.forename: Min Su
authors.initials: MS
authors.lastname: Kim
authors.forename: Do Yeob
authors.initials: DY
authors.lastname: Kim
authors.forename: Sung-O
authors.initials: SO
authors.lastname: Kim
authors.forename: Jae-Young
authors.initials: JY
authors.lastname: Leem