title: Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods.
abstract: The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).
authors.affiliation: Department of Electrical Engineering, Korea University, Seoul 136-713, Korea.
authors.forename: Min Yeong
authors.initials: MY
authors.lastname: Song
authors.forename: Yujeong
authors.initials: Y
authors.lastname: Seo
authors.forename: Soyun
authors.initials: S
authors.lastname: Park
authors.forename: Jae Hyuk
authors.initials: JH
authors.lastname: Lee
authors.forename: Ho-Myoung
authors.initials: HM
authors.lastname: An
authors.forename: Tae Geun
authors.initials: TG
authors.lastname: Kim