title: 3D analysis of advanced nano-devices using electron and atom probe tomography.
abstract: The structural and chemical properties of advanced nano-devices with a three-dimensional (3D) architecture have been studied at the nanometre scale. An original method has been used to characterize gate-all-around and tri-gate silicon nanowire transistor by combining electron tomography and atom probe tomography (APT). Results show that electron tomography is a well suited method to determine the morphological structure and the dimension variations of devices provided that the atomic number contrast is sufficient but without an absolute chemical identification. APT can map the 3D chemical distribution of the atoms in devices but suffers from strong distortions in the dimensions of the reconstructed volume. These may be corrected using a simple method based on atomic density correction and electron tomography data. Moreover, this combination is particularly useful in helping to understand the evaporation mechanisms and improve APT reconstructions. This paper demonstrated that a full 3D characterization of nano-devices requires the combination of both tomography techniques.
authors.affiliation: CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France. Electronic address: adeline.grenier@cea.fr.
authors.forename: A
authors.initials: A
authors.lastname: Grenier
authors.forename: S
authors.initials: S
authors.lastname: Duguay
authors.forename: J P
authors.initials: JP
authors.lastname: Barnes
authors.forename: R
authors.initials: R
authors.lastname: Serra
authors.forename: G
authors.initials: G
authors.lastname: Haberfehlner
authors.forename: D
authors.initials: D
authors.lastname: Cooper
authors.forename: F
authors.initials: F
authors.lastname: Bertin
authors.forename: S
authors.initials: S
authors.lastname: Barraud
authors.forename: G
authors.initials: G
authors.lastname: Audoit
authors.forename: L
authors.initials: L
authors.lastname: Arnoldi
authors.forename: E
authors.initials: E
authors.lastname: Cadel
authors.forename: A
authors.initials: A
authors.lastname: Chabli
authors.forename: F
authors.initials: F
authors.lastname: Vurpillot
keywords: Atom probe tomography; Electron tomography; Gate-all-around transistor; Quantification; Tip shape simulation; Tri-gate transistor