title: Metal-free, single-polymer device exhibits resistive memory effect.
abstract: All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10(3)), good retention characteristics (>10,000 s), and stability in ambient storage (>3 months).
authors.affiliation: Materials Science & Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia .
authors.forename: Unnat S
authors.initials: US
authors.lastname: Bhansali
authors.forename: Mohd A
authors.initials: MA
authors.lastname: Khan
authors.forename: Dongkyu
authors.initials: D
authors.lastname: Cha
authors.forename: Mahmoud N
authors.initials: MN
authors.lastname: AlMadhoun
authors.forename: Ruipeng
authors.initials: R
authors.lastname: Li
authors.forename: Long
authors.initials: L
authors.lastname: Chen
authors.forename: Aram
authors.initials: A
authors.lastname: Amassian
authors.forename: Ihab N
authors.initials: IN
authors.lastname: Odeh
authors.forename: Husam N
authors.initials: HN
authors.lastname: Alshareef