Thermodynamic study on the formation of boron nitride.
Based on film adhesion properties with substrate, the sputtering system is favorable for the formation of cubic boron nitride (c-BN). In the present study, the standard free energy change was investigated for the formation of boron nitride with nitrogen partial pressures. It was found that the cubic phase BN is more thermodynamically stable than the hexagonal phase, with the equilibrium constant for the cubic phase BN formation reaction being lower than that for the hexagonal phase reaction.
Materials and Structures Laboratory, Tokyo institute of Technology, Nagatsuta, Midori-Ku, Yokohama 226-8503, Japan.
Sehoon
S
Jeong
Kwangmin
K
Lee
D001896:Boron Compounds / Q000138:chemical synthesis*; D004735:Energy Transfer; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D044367:Phase Transition; D013499:Surface Properties
D001896:Boron Compounds; D046911:Macromolecular Substances; C017282:boron nitride