Investigation on the temperature dependence of the performance of solution processed Si-Zn-Sn oxide thin film transistor.
The performance of the oxide thin film transistors (TFTs) using silicon zinc tin oxide (SZTO) as active channel layer fabricated by solution process method has been reported investigated depending on the annealing temperature. The SZTO TFTs fabricated on silicon wafers exhibit a mobility of 0.591 cm2/Vs, a subthreshold swing (S.S) of 0.44 V/decade, a threshold voltage of 0.7 V and an I(on/off) ratio of 4.4 x 10(6).
Microdevice Engineering, College of Engineering, Korea University, Seoul 136-703, Republic of Korea.
Jun Young
JY
Choi
Sang Sig
SS
Kim
Sang Yeol
SY
Lee