Effect of applied voltage on the structural properties of SnO2 nanostuctures grown on indium-tin-oxide coated glass substrates.
SnO2 nanostuctures were formed on indium-tin-oxide (ITO)-coated glass substrates by using an electrochemical deposition (ECD) method. X-ray photoelectron spectroscopy (XPS) spectra showed the existence of elemental Sn and O in the samples, indicative of the formation of SnO2 materials. An XPS spectrum showing the O 1s peak at a binding energy of 531.5 eV indicated that the oxygen atoms were bonded to the SnO2. Field-emission scanning electron microscopy (FE-SEM) images showed that the samples formed by using the ECD method had SnO2 nanostructures with a size between 280 and 350 nm. FE-SEM images showed that the size of the SnO2 nanostructures formed at 65 degrees C for 30 min increased with decreasing applied voltage. X-ray diffraction (XRD) patterns showed that the SnO2 nanostrucures had tetragonal structures with cell parameters of a = 4.738 A and c = 3.187 A. XRD results showed that the peak intensity of the (110) plane increased with decreasing applied voltage, indicative of a preferencial orientation of the (110) plane.
Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea.
Dea Uk
DU
Lee
Dong Yeol
DY
Yun
Young Soo
YS
No
Jun Ho
JH
Hwang
Chang Hun
CH
Lee
Tae Whan
TW
Kim
D000327:Adsorption / Q000528:radiation effects; D003460:Crystallization / Q000379:methods*; D004574:Electromagnetic Fields; D004595:Electroplating / Q000379:methods*; D005898:Glass / Q000737:chemistry* / Q000528:radiation effects; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure; D010316:Particle Size; D011829:Radiation Dosage; D017971:Tin Compounds / Q000737:chemistry* / Q000528:radiation effects*
D017971:Tin Compounds; C109984:indium tin oxide