Index-matched indium tin oxide electrodes for capacitive touch screen panel applications.
Index-matched indium tin oxide (ITO) electrodes for capacitive touch screen panels have been fabricated to improve optical transmittance and reduce the difference of reflectance (deltaR) between the etched and un-etched regions. 8.5 nm Nb2O5 and 49 nm SiO2 thin films were deposited by magnetron sputtering as index-matching layers between an ITO electrode and a glass substrate. In case of 30 nm ITO electrode, a 4.3% improvement in the optical transmittance and a deltaR of less than 1% were achieved, along with a low sheet resistance of 90 omega/square.
Electronics and Telecommunications Research Institute, Yuseong-gu, Daejeon, 305-700, Korea.
Chan-Hwa
CH
Hong
Jae-Heon
JH
Shin
Byeong-Kwon
BK
Ju
Kyung-Hyun
KH
Kim
Nae-Man
NM
Park
Bo-Sul
BS
Kim
Woo-Seok
WS
Cheong
D025802:Electric Capacitance; D004566:Electrodes; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008029:Lighting / Q000295:instrumentation*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012031:Refractometry / Q000295:instrumentation*; D017971:Tin Compounds / Q000737:chemistry*; D014110:Touch; D014584:User-Computer Interface
D017971:Tin Compounds; C109984:indium tin oxide