Electrolyte-gated, high mobility inorganic oxide transistors from printed metal halides.
Inkjet printed and low voltage (≤1 V) driven field-effect transistors (FETs) are prepared from precursor-made In2O3 as the transistor channel and a composite solid polymer electrolyte (CSPE) as the gate dielectric. Printed halide precursors are annealed at different temperatures (300-500 °C); however, the devices that are heated to 400 °C demonstrate the best electrical performance including field-effect mobility as high as 126 cm(2) V(-1) s(-1) and subthreshold slope (68 mV/dec) close to the theoretical limit. These outstanding device characteristics in combination with ease of fabrication, moderate annealing temperatures and low voltage operation comprise an attractive set of parameters for battery compatible and portable electronics.
Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Germany.
Suresh Kumar
SK
Garlapati
Nilesha
N
Mishra
Simone
S
Dehm
Ramona
R
Hahn
Robert
R
Kruk
Horst
H
Hahn
Subho
S
Dasgupta