Surface passivation of high density InGaN/GaN nanorods fabricated by reactive ion etching.
High density GaN nanorods containing InGaN quantum disks (QD's) were fabricated by inductively coupled plasma reactive ion etching (RIE) with self-assembled nano masks. Optical properties of the QD were severely degraded because of the damage on etched sidewalls during the RIE. However, after surface treatment with (NH4)2S, the QD showed improved photoluminescence. This result suggests that surface damage of GaN nanostructure during the dry etching can be passivated by sulfur atoms.
Department of Physics, Chonnam National University, Gwangju 500-757, Korea.
Yun Mi
YM
Song
Soo Hee
SH
Kim
Jin-Ho
JH
Kang
Joonmo
J
Park
Seong-Ran
SR
Jeon
Sang-Wan
SW
Ryu