Thermal stability of gallium-doped zinc oxide thin film on glass substrates by an RF sputtering process.
The effects of a heat treatment on the structural and electrical properties of GZO thin films grown by RF magnetron sputtering were investigated. The heat treatment involved temperatures in the range from 200 degrees C to 500 degrees C under air. As the temperature was increased, the electrical properties of GZO thin films increased exponentially and the surface morphology was drastically altered. The effect of temperature is discussed based on electrical and structural characterization of the materials.
Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea.
Jong-Ho
JH
Kang
Myung-Hyun
MH
Lee
Young Soo
YS
Lim
Hyoung-Seuk
HS
Choi
Won-Seon
WS
Seo
Jung-Sik
JS
Bang
Hyun-Woo
HW
Jang
Heon-Jin
HJ
Choi