Atomic configurations at InAs partial dislocation cores associated with Z-shape faulted dipoles.
The atomic arrangements of two types of InAs dislocation cores associated by a Z-shape faulted dipole are observed directly by aberration-corrected high-angle annular-dark-field imaging. Single unpaired columns of different atoms in a matrix of dumbbells are clearly resolved, with observable variations of bonding lengths due to excess Coulomb force from bare ions at the dislocation core. The corresponding geometric phase analysis provides confirmation that the dislocation cores serve as origins of strain field inversion while stacking faults maintain the existing strain status.
1] Center for Nanoscale Characterization and Devices, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China [2] Department of Physics, Arizona State University, Tempe, Arizona 85287, USA.
Luying
L
Li
Zhaofeng
Z
Gan
Martha R
MR
McCartney
Hanshuang
H
Liang
Hongbin
H
Yu
Yihua
Y
Gao
Jianbo
J
Wang
David J
DJ
Smith