Metal contacts on physical vapor deposited monolayer MoS2.
The understanding of the metal and transition metal dichalcogenide (TMD) interface is critical for future electronic device technologies based on this new class of two-dimensional semiconductors. Here, we investigate the initial growth of nanometer-thick Pd, Au, and Ag films on monolayer MoS2. Distinct growth morphologies are identified by atomic force microscopy: Pd forms a uniform contact, Au clusters into nanostructures, and Ag forms randomly distributed islands on MoS2. The formation of these different interfaces is elucidated by large-scale spin-polarized density functional theory calculations. Using Raman spectroscopy, we find that the interface homogeneity shows characteristic Raman shifts in E2g(1) and A1g modes. Interestingly, we show that insertion of graphene between metal and MoS2 can effectively decouple MoS2 from the perturbations imparted by metal contacts (e.g., strain), while maintaining an effective electronic coupling between metal contact and MoS2, suggesting that graphene can act as a conductive buffer layer in TMD electronics.
Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States.
Cheng
C
Gong
Chunming
C
Huang
Justin
J
Miller
Lanxia
L
Cheng
Yufeng
Y
Hao
David
D
Cobden
Jiyoung
J
Kim
Rodney S
RS
Ruoff
Robert M
RM
Wallace
Kyeongjae
K
Cho
Xiaodong
X
Xu
Yves J
YJ
Chabal