Chemically doped perylene diimide lamellae based field effect transistor with low operating voltage and high charge carrier mobility.
Chemical doping of an electron transporter results in the formation of a radical anion containing semiconductor which showed high electron mobility (13 cm(2) V(-1) s(-1)) at low operating voltage (1 V).
Polymer science and engineering division, CSIR-National Chemical Laboratory, CSIR-Network Institutes of Solar Energy, Dr Homi Bhabha Road, Pune-411008, India. k.krishnamoorthy@ncl.res.in.
Arulraj
A
Arulkashmir
Bhanprakash
B
Jain
Jino C
JC
John
Kanak
K
Roy
Kothandam
K
Krishnamoorthy