Electrical stress effect on on-current of MILC poly-Si thin-film transistors.
In this study, we studied the effect of the electrical stress on the on-current of metal-induced laterally crystallized poly-Si TFTs. It was found that the electrical performance of polycrystalline silicon thin-film transistors (TFTs) is greatly affected by the electrical stress. Under the electrical stress condition, the drain current increases due to hot-electron trap at the drain junction. The computer simulation revealed the fact that the improvement mechanism can be reproduced by effective channel length shortening. It turns out that analysis of the capacitance and output characteristics supports this model.
Research Institute of Advanced Materials (RIAM), Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, South Korea.
Chang Woo
CW
Byun
Se Wan
SW
Son
Yong Woo
YW
Lee
Seung Ki
SK
Joo