Effects of the duty ratio on the niobium oxide film deposited by pulsed-DC magnetron sputtering methods.
Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.0 micros at the fixed frequency of 200 kHz. From the structural and optical characteristics of the sputtered NbOx films, it was possible to obtain more uniform and coherent NbOx films in case of the higher reverse voltage time as a result of the cleaning effect on the Nb2O5 target surface. The electrical characteristics from the metal-insulator-semiconductor (MIS) fabricated with the NbOx films shows the leakage currents are influenced by the reverse voltage time and the Schottky barrier diode characteristics.
Department of Electronics Engineering, Gachon University, Seongnam, 461-701, Korea.
Ji Mi
JM
Eom
Hyun Gon
HG
Oh
Il Hwan
IH
Cho
Sang Jik
SJ
Kwon
Eou Sik
ES
Cho
D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004595:Electroplating / Q000379:methods*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D046911:Macromolecular Substances / Q000737:chemistry / Q000528:radiation effects; D008422:Materials Testing; D008872:Microwaves; D008968:Molecular Conformation / Q000528:radiation effects; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D009556:Niobium / Q000737:chemistry* / Q000528:radiation effects*; D010087:Oxides / Q000737:chemistry* / Q000528:radiation effects*; D010316:Particle Size; D012666:Semiconductors; D013499:Surface Properties / Q000528:radiation effects
D046911:Macromolecular Substances; D010087:Oxides; D009556:Niobium; C073337:niobium pentoxide