Diffusion-limited current in organic metal-insulator-metal diodes.
An analytical expression for the diffusion current in organic metal-insulator-metal diodes is derived. The derivation is based on the classical diffusion theory of Schottky, with adaptations to account for the absence of doping, a built-in voltage due to asymmetric contacts, and band bending at the Ohmic contact. The commonly observed deviation of the ideality factor from unity (~1.2) is characteristic of diffusion-limited currents in undoped organic semiconductors. Summing with the classical space-charge limited current provides a full analytic description of the current as a function of voltage, temperature and layer thickness.
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, Netherlands and Dutch Polymer Institute, Post Office Box 902, 5600 AX Eindhoven, Netherlands.
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