Sub 60 mV/decade switch using an InAs nanowire-Si heterojunction and turn-on voltage shift with a pulsed doping technique.
We report changes of turn-on voltage in InAs-Si heterojunction steep subthreshold-slope transistors by the Zn-pulsed doping technique for InAs nanowire channels. The doping of the nanowire channel moderately changes turn-on voltage from negative to positive voltage, while keeping a steep subthreshold-slope of 30 mV/decade under reverse bias direction. The formation of pseudointrinsic InAs segment is found to be important to make a normally off transistor with a steep subthreshold slope.
Graduate School of Information Science and Technology, Hokkaido University , North 14 West 9, Sapporo 060-0814, Japan.
Katsuhiro
K
Tomioka
Masatoshi
M
Yoshimura
Takashi
T
Fukui
D001152:Arsenicals / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry; D013499:Surface Properties; D015032:Zinc
D001152:Arsenicals; D007204:Indium; C076773:indium arsenide; D015032:Zinc; D012825:Silicon