Effects of nitrogen flow rate on the properties of indium oxide thin films.
Indium oxide thin films are deposited on glass substrates at nitrogen flow rates of 0-50% by rf reactive magnetron sputtering and are characterized for their structural, morphological, electrical, and optical properties. The experimental results showed that the control of nitrogen flow rate has a significant effect on the properties of the In2O3 thin films. The change in the preferred growth orientation from (222) to (400) planes is observed above a nitrogen flow rate of 10%. The average optical transmittance in the wavelength range of 400-1100 nm is increased from 85.4% at 0% to 86.7% at 50%, where the smallest value of the optical band gap energy is obtained. In addition to the improvement in crystallinity of the films, the nitrogen flow rate plays a crucial role in the fabrication of high-quality indium oxide films and devices.
Department of Materials Science and Engineering, Silla University, Busan 617-736, Korea.
Shinho
S
Cho
Moonhwan
M
Kim
D000327:Adsorption; D003460:Crystallization / Q000379:methods*; D004553:Electric Conductivity; D004595:Electroplating / Q000379:methods*; D005898:Glass / Q000737:chemistry; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D009584:Nitrogen / Q000737:chemistry*; D010316:Particle Size; D012031:Refractometry; D012212:Rheology / Q000379:methods; D013499:Surface Properties; D017971:Tin Compounds / Q000138:chemical synthesis*
D046911:Macromolecular Substances; D008567:Membranes, Artificial; D017971:Tin Compounds; C109984:indium tin oxide; D009584:Nitrogen