Room temperature deposition of silicon nanodot clusters by plasma-enhanced chemical vapor deposition.
The formation of nanometer-scale (ns)-Si dots and clusters on p-GaN layers has been studied by controlling the early stage of growth during plasma-enhanced chemical vapor deposition (PECVD) at room temperature. We found that ns-Si dots and clusters formed on the p-GaN surface, indicating that growth was the Volmer-Weber mode. The deposition parameters such as radio frequency (RF) power and processing time mainly influenced the size of the ns-Si dots (40 nm-160 nm) and the density of the ns-Si dot clusters.
Department of Materials Science and Metallurgical Engineering, Sunchon National University, Sunchon, Chonnam 540-950, Korea.
Jae-Kwan
JK
Kim
Jun Young
JY
Kim
Jae-Sik
JS
Yoon
Ji-Myon
JM
Lee