Enhancement of Co nucleation on the TaN(x) film surface in Co MOCVD.
In this work, the Co film was deposited by chemical vapor deposition (CVD) on TaN(x)/SiO2/Si substrate at various NH3/H2 gas flow ratio (0, 0.08, 0.11, 0.17, 0.2) to form the continuous layer. It was found that Co film can achieve a low resistivity of 63 microomega-cm, high nucleation density, and a low root-mean-square roughness of 0.79 nm at 0.17 of NH3/H2 gas flow ratio. Moreover, by using fourier transform infrared spectroscopy (FT-IR) analysis, the effect of NH3 gas was confirmed as a reaction catalyst.
Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, ASI/KR/KS013/SEOUL, Korea.
Jae-Hyung
JH
Park
Dae-Yong
DY
Moon
Dong-Suk
DS
Han
So-Ra
SR
Shin
Jong-Wan
JW
Park