Fabrication of solution-processed InSnZnO/ZrO2 thin film transistors.
We fabricated InSnZnO (ITZO) thin-film transistors (TFTs) with a high-permittivity (K) ZrO2 gate insulator using a solution process and explored the microstructure and electrical properties. ZrO2 and ITZO (In:Sn:Zn = 2:1:1) precursor solutions were deposited using consecutive spin-coating and drying steps on highly doped p-type Si substrate, followed by annealing at 700 degrees C in ambient air. The ITZO/ZrO2 TFT device showed n-channel depletion mode characteristics, and it possessed a high saturation mobility of approximately 9.8 cm2/V x s, a small subthreshold voltage swing of approximately 2.3 V/decade, and a negative V(TH) of approximately 1.5 V, but a relatively low on/off current ratio of approximately 10(-3). These results were thought to be due to the use of the high-kappa crystallized ZrO2 dielectric (kappa approximately 21.8) as the gate insulator, which could permit low-voltage operation of the solution-processed ITZO TFT devices for applications to high-throughput, low-cost, flexible and transparent electronics.
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
Soo Min
SM
Hwang
Seung Muk
SM
Lee
Jun Hyuk
JH
Choi
Jun Hyung
JH
Lim
Jinho
J
Joo
D004867:Equipment Design; D019544:Equipment Failure Analysis; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D012996:Solutions; D017971:Tin Compounds / Q000737:chemistry*; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry*; D015040:Zirconium / Q000737:chemistry*
D012996:Solutions; D017971:Tin Compounds; C109984:indium tin oxide; D015040:Zirconium; C028541:zirconium oxide; D015034:Zinc Oxide