Deposited low temperature silicon GHz modulator.
We demonstrate gigahertz electro-optic modulator fabricated on low temperature polysilicon using excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. These results open up an array of possibilities for silicon photonics including photonics on DRAM and on flexible substrates.
Yoon Ho Daniel
YH
Lee
Michael O
MO
Thompson
Michal
M
Lipson