Study of nanocrystalline silicon films synthesized Below 100 degrees C by catalytic chemical vapor deposition.
Nanocrystalline silicon (nc-Si) films were synthesized by catalytic chemical vapor deposition at a low substrate temperature (100 degrees C) for use as an active layer in bottom-gate thin-film transistors. The hydrogen-dilution technique was employed to increase the crystalline volume fraction of the synthesized films. The incubation layer thickness was estimated to be 5.1 nm for a hydrogen-dilution ratio, R(H) (= [H2]/[SiH4]), of 54. When R(H) was increased from 64 to 74, the deposition rate decreased from 20 to 0.5 nm/min. In order to achieve a high deposition rate and high crystallinity near the interface region, we modulated R(H) through the film thickness. We also fabricated metal-insulator-semiconductor-insulator-semiconductor diodes from multilayer structures consisting of an nc-Si layer sandwiched between two silicon nitride layers. By analyzing the capacitance-voltage characteristics of these diodes, we found that the hysteresis and rectifying behavior of these diodes were affected by the the nc-Si layer thickness.
Department of Nano Science and Technology, University of Seoul, Seoul 130-743, Korea.
Tae-Ho
TH
Song
Ki-Su
KS
Keum
Wan-Shick
WS
Hong
D002384:Catalysis; D003460:Crystallization / Q000379:methods*; D005740:Gases / Q000737:chemistry; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D008968:Molecular Conformation; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
D005740:Gases; D046911:Macromolecular Substances; D008567:Membranes, Artificial; D012825:Silicon