Laser direct patterning of indium tin oxide for defining a channel of thin film transistor.
In this work, using a Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser, a direct patterning of indium tin oxide (ITO) channel was realized on glass substrates and the results were compared and analyzed in terms of the effect of repetition rate, scanning speed on etching characteristics. The results showed that the laser conditions of 40 kHz repetition rate with a scanning speed of 500 mm/s were appropriate for the channeling of ITO electrodes. The length of laser-patterned channel was maintained at about 55 microm. However, residual spikes (about 50 nm in height) of ITO were found to be formed at the edges of the laser ablated area and a few ITO residues remained on the glass substrate after laser scanning. By dipping the laser-ablated ITO film in ITO diluted etchant (ITO etchant/DI water: 1/10) at 50 degrees C for 3 min, the spikes and residual ITO were effectively removed. At last, using the laser direct patterning, a bottom-source-drain indium gallium zinc oxide thin film transistor (IGZO-TFT) was fabricated. It is successfully demonstrated that the laser direct patterning can be utilized instead of photolithography to simplify the fabrication process of TFT channel, resulting in the increase of productivity and reduction of cost.
Department of Electronics Engineering, Gachon University, 1342 SeongnamDaero, Sujeong-gu, Seongnam, Gyeonggi-do, 461-701, Republic of Korea.
Jian-Xun
JX
Wang
Sang Jik
SJ
Kwon
Jae-Hee
JH
Han
Eou Sik
ES
Cho
D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007834:Lasers; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D054802:Molecular Imprinting / Q000379:methods*; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D010316:Particle Size; D013499:Surface Properties; D017971:Tin Compounds / Q000737:chemistry* / Q000528:radiation effects; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D008567:Membranes, Artificial; D017971:Tin Compounds; C109984:indium tin oxide