Charge retention characteristics of silicide-induced crystallized polycrystalline silicon floating gate thin-film transistors for active matrix organic light-emitting diode.
In this work, non-volatile memory thin-film transistor (NVM-TFT) was fabricated by nickel silicide-induced laterally crystallized (SILC) polycrystalline silicon (poly-Si) as the active layer. The nickel seed silicide-induced crystallized (SIC) poly-Si was used as storage layer which is embedded in the gate insulator. The novel unit pixel of active matrix organic light-emitting diode (AMOLED) using NVM-TFT is proposed and investigated the electrical and optical performance. The threshold voltage shift showed 17.2 V and the high reliability of retention characteristic was demonstrated until 10 years. The retention time can modulate the recharge refresh time of the unit pixel of AMOLED up to 5000 sec.
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea.
Jae Hyo
JH
Park
Se Wan
SW
Son
Chang Woo
CW
Byun
Hyung Yoon
HY
Kim
So Na
SN
Joo
Yong Woo
YW
Lee
Seung Jae
SJ
Yun
Seung Ki
SK
Joo