The effect of sintering temperature on the microstructure and electrical performance of sol-gel-deposited SnInZnO thin film transistors.
We reported the capability of the SnInZnO (TIZO) film, fabricated using the sol-gel process, to act as a channel layer for printed electronics. We varied the sintering temperature to examine the potential of both the material and the process for application at low processing temperatures. The structure of the film sintered at 300 degrees C consisted of amorphous phase and the nanocrystalline structure began to appear locally at 400 degrees C. With increasing sintering temperature, the ratio of the crystalline structure was increased. In addition, the saturation mobility (mu sat) and off current were increased, the I(on)/I(off) was decreased, and the threshold voltage was shifted in the negative direction by increasing the sintering temperature (mu sat of 11.91 cm2 V(-1) s(-1) and 0.11 cm2 V(-1) s(-1) for the 700 degrees C- and 300 degrees C-sintered samples, respectively). This study could encourage in developing cost-effective TIZO TFTs with robust performances.
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
Jun Hyung
JH
Lim
Jun Hyuk
JH
Choi
Soo Min
SM
Hwang
Jinho
J
Joo
D004553:Electric Conductivity; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006358:Hot Temperature; D046911:Macromolecular Substances / Q000737:chemistry; D008422:Materials Testing; D008567:Membranes, Artificial; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D008968:Molecular Conformation; D010087:Oxides / Q000737:chemistry*; D010316:Particle Size; D044367:Phase Transition; D013499:Surface Properties; D014173:Transistors, Electronic
D046911:Macromolecular Substances; D008567:Membranes, Artificial; D010087:Oxides