Inserted layer of AZO thin film with high work function between transparent conductive oxide and p-layer and its solar cell application.
We report aluminum doped zinc oxide (AZO) films with high work function as an insertion layer between transparent conducting oxides (TCO) and hydrogenated amorphous silicon carbide (a-SiC:H) layer to improve open circuit voltage (V(oc)) and fill factor (FF) for thin film solar cells. Amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier at the interface between a-SiC:H window and TCO. The interface engineering is carried out by inserting an AZO layer with high work function (4.95 eV at O2 = 2 sccm). As a result, V(oc) and FF improved significantly. FF as high as 63.35% is obtained.
College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Hyeongsik
H
Park
Jaehyeong
J
Lee
Youn-Jung
YJ
Lee
Heewon
H
Kim
Junhee
J
Jung
S Qamar
SQ
Hussain
Jinjoo
J
Park
Chonghoon
C
Shin
Sunbo
S
Kim
Shihyun
S
Ahn
Junsin
J
Yil