title: InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning.
abstract: Dense arrays of indium arsenide (InAs) nanowire materials have been grown by selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) using polystyrene-b-poly(methyl methacrylate) (PS/PMMA) diblock copolymer (DBC) nanopatterning technique, which is a catalyst-free approach. Nanoscale openings were defined in a thin (~10 nm) SiNx layer deposited on a (111)B-oriented GaAs substrate using the DBC process and CF4 reactive ion etching (RIE), which served as a hard mask for the nanowire growth. InAs nanowires with diameters down to ~ 20 nm and micrometer-scale lengths were achieved with a density of ~ 5 × 10(10) cm(2). The nanowire structures were characterized by scanning electron microscopy and transmission electron microscopy, which indicate twin defects in a primary zincblende crystal structure and the absence of threading dislocation within the imaged regions.
authors.affiliation: Department of Electrical and Computer Engineering, University of Wisconsin-Madison , 1415 Engineering Drive, Madison, Wisconsin 53706, United States.
authors.forename: Yinggang
authors.initials: Y
authors.lastname: Huang
authors.forename: Tae Wan
authors.initials: TW
authors.lastname: Kim
authors.forename: Shisheng
authors.initials: S
authors.lastname: Xiong
authors.forename: Luke J
authors.initials: LJ
authors.lastname: Mawst
authors.forename: Thomas F
authors.initials: TF
authors.lastname: Kuech
authors.forename: Paul F
authors.initials: PF
authors.lastname: Nealey
authors.forename: Yushuai
authors.initials: Y
authors.lastname: Dai
authors.forename: Zihao
authors.initials: Z
authors.lastname: Wang
authors.forename: Wei
authors.initials: W
authors.lastname: Guo
authors.forename: David
authors.initials: D
authors.lastname: Forbes
authors.forename: Seth M
authors.initials: SM
authors.lastname: Hubbard
authors.forename: Michael
authors.initials: M
authors.lastname: Nesnidal
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D003460:Crystallization; D005708:Gallium / Q000737:chemistry; D007204:Indium / Q000737:chemistry*; D008689:Methacrylates / Q000737:chemistry; D046529:Microscopy, Electron, Transmission; D053770:Nanowires / Q000737:chemistry*; D011108:Polymers / Q000737:chemistry*; D011137:Polystyrenes / Q000737:chemistry
chemical_list: D001152:Arsenicals; D008689:Methacrylates; D011108:Polymers; D011137:Polystyrenes; C522509:polystyrene-block-poly(methyl methacrylate); D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide