title: Device performances of organic light-emitting diodes with indium tin oxide, gallium zinc oxide, and indium zinc tin oxide anodes deposited at room temperature.
abstract: Thin films of Indium tin oxide (ITO), Gallium zinc oxide (GZO), and Indium zinc tin oxide (IZTO) were deposited on glass substrates by pulsed direct current magnetron sputtering at room temperature. The structural, optical, and electrical properties of the films were investigated towards evaluating their applications as flexible anodes. IZTO films exhibited the lowest resistivity (6.3 x 10(-4) Omega cm). Organic light-emitting diodes (OLEDs) were fabricated using the ITO, GZO, and IZTO films as anode layers. The turn-on voltages at a current density of 4.5 mA/cm2, 5.5 mA/cm2, 6.5 mA/cm2 were 5.5 V, 13.7 V, and 4.7 V for the devices with ITO, GZO, and IZTO anodes, respectively. The best performance was observed with the IZTO film, indicating its suitability as an alternative material for conventional ITO anodes used in OLEDs and flexible displays.
authors.affiliation: Graduate School of NID Fusion Technology, Seoul National University of Science and Technology, 138 Gongreung-Gil, Nowon-Gu, Seoul, 139-743, Korea.
authors.forename: Changhun
authors.initials: C
authors.lastname: Lee
authors.forename: Yoonduk
authors.initials: Y
authors.lastname: Ko
authors.forename: Youngsung
authors.initials: Y
authors.lastname: Kim