title: Fabrication of ordered, large scale, horizontally-aligned si nanowire arrays based on an in situ hard mask block copolymer approach.
abstract: A simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry.
authors.affiliation: Materials Research Group, Department of Chemistry and Tyndall National Institute, University College Cork, Cork, Ireland 2 Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin, Ireland.
authors.forename: Tandra
authors.initials: T
authors.lastname: Ghoshal
authors.forename: Ramsankar
authors.initials: R
authors.lastname: Senthamaraikannan
authors.forename: Matthew T
authors.initials: MT
authors.lastname: Shaw
authors.forename: Justin D
authors.initials: JD
authors.lastname: Holmes
authors.forename: Michael A
authors.initials: MA
authors.lastname: Morris
keywords: block copolymers; nanowires; patterning; photoelectron spectroscopy; silicon