title: A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor.
abstract: We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects which arise from coherent tunnelling of electrons in the quantum dot.
authors.affiliation: School of Physics, University of New South Wales, Sydney NSW 2052, Australia.
authors.forename: A M
authors.initials: AM
authors.lastname: See
authors.forename: O
authors.initials: O
authors.lastname: Klochan
authors.forename: A P
authors.initials: AP
authors.lastname: Micolich
authors.forename: M
authors.initials: M
authors.lastname: Aagesen
authors.forename: P E
authors.initials: PE
authors.lastname: Lindelof
authors.forename: A R
authors.initials: AR
authors.lastname: Hamilton
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D001152:Arsenicals / Q000737:chemistry*; D004579:Electron Transport; D004583:Electrons; D005708:Gallium / Q000737:chemistry*; D008422:Materials Testing; D045663:Quantum Dots; D014173:Transistors, Electronic
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium; D000535:Aluminum