title: Ferroelectric properties of vertically aligned nanostructured BaTiO3-CeO2 thin films and their integration on silicon.
abstract: Epitaxial (BaTiO3)0.5(CeO2)0.5 films have been deposited in vertically aligned nanocomposite form on SrTiO3/TiN buffered Si substrates to achieve high-quality ferroelectrics on Si. The thin TiN seed layer promotes the epitaxial growth of the SrTiO3 buffer on Si, which in turn is essential for the high-quality growth of the vertically aligned nanocomposite structure. X-ray diffraction and transmission electron microscopy characterization show that the films consist of distinct c-axis oriented BaTiO3 and CeO2 phases. Polarization measurements show that the BaTiO3-CeO2 films on Si are actually ferroelectric at room temperature, and the ferroelectric response is comparable to pure BaTiO3 as well as the BaTiO3-CeO2 films on SrTiO3 single-crystalline substrates. Capacitance-voltage measurements show that, instead of decreasing, the Curie temperature increases to 175 and 150 °C for the samples on SrTiO3 and Si substrates, respectively. This work is an essential step towards integrating novel nanostructured materials with advanced functionalities into Si-based devices.
authors.affiliation: Department of Electrical and Computer Engineering, Texas A&M University , College Station, Texas 77843-3128, United States.
authors.forename: Fauzia
authors.initials: F
authors.lastname: Khatkhatay
authors.forename: Aiping
authors.initials: A
authors.lastname: Chen
authors.forename: Joon Hwan
authors.initials: JH
authors.lastname: Lee
authors.forename: Wenrui
authors.initials: W
authors.lastname: Zhang
authors.forename: Haron
authors.initials: H
authors.lastname: Abdel-Raziq
authors.forename: Haiyan
authors.initials: H
authors.lastname: Wang