title: High performance of graphene oxide-doped silicon oxide-based resistance random access memory.
abstract: In this letter, a double active layer (Zr:SiOx/C:SiOx) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiOx layer. Compared with single Zr:SiOx layer structure, Zr:SiOx/C:SiOx structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.
authors.forename: Rui
authors.initials: R
authors.lastname: Zhang
authors.forename: Kuan-Chang
authors.initials: KC
authors.lastname: Chang
authors.affiliation: Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan. tcchang@mail.phys.nsysu.edu.tw.
authors.forename: Ting-Chang
authors.initials: TC
authors.lastname: Chang
authors.forename: Tsung-Ming
authors.initials: TM
authors.lastname: Tsai
authors.forename: Kai-Huang
authors.initials: KH
authors.lastname: Chen
authors.forename: Jen-Chung
authors.initials: JC
authors.lastname: Lou
authors.forename: Jung-Hui
authors.initials: JH
authors.lastname: Chen
authors.forename: Tai-Fa
authors.initials: TF
authors.lastname: Young
authors.forename: Chih-Cheng
authors.initials: CC
authors.lastname: Shih
authors.forename: Ya-Liang
authors.initials: YL
authors.lastname: Yang
authors.forename: Yin-Chih
authors.initials: YC
authors.lastname: Pan
authors.forename: Tian-Jian
authors.initials: TJ
authors.lastname: Chu
authors.forename: Syuan-Yong
authors.initials: SY
authors.lastname: Huang
authors.forename: Chih-Hung
authors.initials: CH
authors.lastname: Pan
authors.forename: Yu-Ting
authors.initials: YT
authors.lastname: Su
authors.forename: Yong-En
authors.initials: YE
authors.lastname: Syu
authors.forename: Simon M
authors.initials: SM
authors.lastname: Sze