title: An intrinsically stretchable nanowire photodetector with a fully embedded structure.
abstract: Fabrication of intrinsically stretchable nanowire photodetectors based on fully embedded structures is reported. A lithographic filtration method is used to integrate different functional layers into the photodetectors, which exhibit excellent stretchability up to 100%. The fully embedded structure enables excellent stability against repeated stretching, mechanical scratching, and adhesive forces.
authors.affiliation: School of Materials Science and Engineering, 50 Nanyang Avenue, Nanyang Technological University, Singapore, 639798.
authors.forename: Chaoyi
authors.initials: C
authors.lastname: Yan
authors.forename: Jiangxin
authors.initials: J
authors.lastname: Wang
authors.forename: Xu
authors.initials: X
authors.lastname: Wang
authors.forename: Wenbin
authors.initials: W
authors.lastname: Kang
authors.forename: Mengqi
authors.initials: M
authors.lastname: Cui
authors.forename: Ce Yao
authors.initials: CY
authors.lastname: Foo
authors.forename: Pooi See
authors.initials: PS
authors.lastname: Lee
keywords: elastic conductors; embedded structures; nanowires; photodetectors; stretchable electronics