title: Enhanced conductivity and gating effect of p-type Li-doped NiO nanowires.
abstract: Li doped NiO nanowires with a diameter smaller than 100 nm were synthesized by electrospinning. The nanowires exhibit p-type characteristics with improved electrical conductivity through Li doping. Moreover, an enhanced gating effect was obtained in Li-NiO-nanowire-based field effect transistors (FETs), which hold great potential in transparent optoelectronics.
authors.affiliation: State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China. panw@tsinghua.edu.cn.
authors.forename: Kohei
authors.initials: K
authors.lastname: Matsubara
authors.forename: Siya
authors.initials: S
authors.lastname: Huang
authors.forename: Mitsumasa
authors.initials: M
authors.lastname: Iwamoto
authors.forename: Wei
authors.initials: W
authors.lastname: Pan