title: Nanoscale plasmonic memristor with optical readout functionality.
abstract: We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.
authors.affiliation: Department of Applied Physics, The Benin School of Engineering and Computer Science, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Israel , 91904.
authors.forename: Alexandros
authors.initials: A
authors.lastname: Emboras
authors.forename: Ilya
authors.initials: I
authors.lastname: Goykhman
authors.forename: Boris
authors.initials: B
authors.lastname: Desiatov
authors.forename: Noa
authors.initials: N
authors.lastname: Mazurski
authors.forename: Liron
authors.initials: L
authors.lastname: Stern
authors.forename: Joseph
authors.initials: J
authors.lastname: Shappir
authors.forename: Uriel
authors.initials: U
authors.lastname: Levy
mesh_terms: D004581:Electronics; D055095:Optics and Photonics; D017785:Photons; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D020349:Surface Plasmon Resonance
chemical_list: D012825:Silicon