title: Effect of silicide/silicon hetero-junction structure on thermal conductivity and Seebeck coefficient.
abstract: We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 126.2 +/- 3.7 W/m. K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center.
authors.affiliation: Convergence Components and Material Research Laboratory, ETRI, Daejeon 305-700, Korea.
authors.forename: Wonchul
authors.initials: W
authors.lastname: Choi
authors.forename: Young-Sam
authors.initials: YS
authors.lastname: Park
authors.forename: Younghoon
authors.initials: Y
authors.lastname: Hyun
authors.forename: Taehyoung
authors.initials: T
authors.lastname: Zyung
authors.forename: Jaehyeon
authors.initials: J
authors.lastname: Kim
authors.forename: Soojung
authors.initials: S
authors.lastname: Kim
authors.forename: Hyojin
authors.initials: H
authors.lastname: Jeon
authors.forename: Mincheol
authors.initials: M
authors.lastname: Shin
authors.forename: Moongyu
authors.initials: M
authors.lastname: Jang