title: Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps.
abstract: Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [101_0] to infrequent [022_3] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of surface traps can be achieved simultaneously in ZnO nanowires via In doping. These unique properties make In-doped ZnO nanowire a potential material for photocatalysis application, which is demonstrated by the enhanced photocatalytic degradation of Rhodamine B.
authors.forename: Hongfeng
authors.initials: H
authors.lastname: Duan
authors.affiliation: Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, People's Republic of China. hphe@zju.edu.cn.
authors.forename: Haiping
authors.initials: H
authors.lastname: He
authors.forename: Luwei
authors.initials: L
authors.lastname: Sun
authors.forename: Shiyan
authors.initials: S
authors.lastname: Song
authors.forename: Zhizhen
authors.initials: Z
authors.lastname: Ye