title: Studies on the characteristics and durability of a vertical type organic transistor using indenofluorenedione derivatives as an N-type active material.
abstract: We have fabricated a vertical type organic field effect transistor (OFET) using indenofluorenedione derivatives (IF-dione-F) as an n-type organic active material and dimethyldicyanoquinonediimine (DMDCNQI) as an n-type buffer layer. The configuration of the vertical type OFET was ITO (drain)/ IF-dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of the vertical type OFET were investigated from the measurements of current-voltage characteristics, contact resistance and device durability. In particular, the device consisting of ITO/TriF-IF-dione/LiAl/ TriF-IF-dione/DMDCNQI/LiAl showed a low turn-on voltage and a high on/off ratio of 6.0 x 10(3).
authors.affiliation: Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 121-742, Republic of Korea.
authors.forename: Tae Yeon
authors.initials: TY
authors.lastname: Lee
authors.forename: Dae Young
authors.initials: DY
authors.lastname: Jung
authors.forename: Jong Wook
authors.initials: JW
authors.lastname: Park
authors.forename: Jeong Ho
authors.initials: JH
authors.lastname: Cho
authors.forename: Se Young
authors.initials: SY
authors.lastname: Oh
mesh_terms: D005449:Fluorenes / Q000737:chemistry*; D009930:Organic Chemicals / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D005449:Fluorenes; D009930:Organic Chemicals