title: Observation of single electron transport via multiple quantum states of a silicon quantum dot at room temperature.
abstract: Single electron transport through multiple quantum levels is realized in a Si quantum-dot device at room-temperature conditions. The energy spacing of more than triple the omnipresent thermal energy is obtained from an extremely small ellipsoidal Si quantum dot, and high charge stability is attained through a construction of the gate-all-around structure. These properties may move us a step closer to practical applications of quantum devices at elevated temperatures. An in-depth analysis on the transport behavior and quantum structure is presented.
authors.affiliation: Department of Semiconductor Science, Dongguk University-Seoul , Seoul 100-715, Korea.
authors.forename: Sejoon
authors.initials: S
authors.lastname: Lee
authors.forename: Youngmin
authors.initials: Y
authors.lastname: Lee
authors.forename: Emil B
authors.initials: EB
authors.lastname: Song
authors.forename: Toshiro
authors.initials: T
authors.lastname: Hiramoto