title: Towards polyoxometalate-cluster-based nano-electronics.
abstract: We explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO2, high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom-built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non-volatile molecular memories (NVMM) or flash-RAM.
authors.affiliation: WestCHEM, School of Chemistry, Joseph Black Building, University of Glasgow, University Avenue, Glasgow, G12 8QQ (UK), Fax: (+44) 141-330-4888.
authors.forename: Laia
authors.initials: L
authors.lastname: Vilà-Nadal
authors.forename: Scott G
authors.initials: SG
authors.lastname: Mitchell
authors.forename: Stanislav
authors.initials: S
authors.lastname: Markov
authors.forename: Christoph
authors.initials: C
authors.lastname: Busche
authors.forename: Vihar
authors.initials: V
authors.lastname: Georgiev
authors.forename: Asen
authors.initials: A
authors.lastname: Asenov
authors.forename: Leroy
authors.initials: L
authors.lastname: Cronin
keywords: nanoelectronics; nanosystems; polyoxometalates; redox-active systems