title: Sub-bandgap linear-absorption-based photodetectors in avalanche mode in PN-diode-integrated silicon microring resonators.
abstract: We report a sub-bandgap linear-absorption-based photodetector in avalanche mode at 1550 nm in a PN-diode-integrated silicon microring resonator. The photocurrent is primarily generated by the defect-state absorption introduced by the boron and phosphorous ion implantation during the PN diode formation. The responsivity is enhanced by both the cavity effect and the avalanche multiplication. We measure a responsivity of ~72.8 mA/W upon 8 V at cavity resonances in avalanche mode, corresponding to a gain of ~72 relative to the responsivity of ~1.0 mA/W upon 3 V at cavity resonances in normal mode. Our device exhibits a 3 dB bandwidth of ~7 GHz and an open eye diagram at 15 Gbit/s upon 8 V.
authors.forename: Yu
authors.initials: Y
authors.lastname: Li
authors.forename: Shaoqi
authors.initials: S
authors.lastname: Feng
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhang
authors.forename: Andrew W
authors.initials: AW
authors.lastname: Poon