title: Controllable co-segregation synthesis of wafer-scale hexagonal boron nitride thin films.
abstract: A facile and scalable co-segregation method is used to grow hexagonal boron nitride (h-BN) thin films from B- and N-containing metals. By annealing the sandwiched metal substrates in vacuum, sub-monolayer h-BN flakes, monolayer h-BN films, and multilayer h-BN thin films of varying thickness are successfully prepared. This approach follows an underneath-growth mode and exhibits good thickness- and location-control.
authors.affiliation: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China.
authors.forename: Chaohua
authors.initials: C
authors.lastname: Zhang
authors.forename: Lei
authors.initials: L
authors.lastname: Fu
authors.forename: Shuli
authors.initials: S
authors.lastname: Zhao
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhou
authors.forename: Hailin
authors.initials: H
authors.lastname: Peng
authors.forename: Zhongfan
authors.initials: Z
authors.lastname: Liu
keywords: boron nitride; monolayer; optical absorption; segregation; thickness control; thin films