title: High-resolution radial distribution function of pure ion-implanted amorphous silicon measured using tilted-illumination selected-area electron diffraction.
abstract: High-resolution radial distribution functions of as-implanted and thermally relaxed amorphous silicon created by ion implantation were measured using tilted-illumination selected area electron diffraction at room temperature. The diffracted intensities were measured out to a maximum scattering vector 2 sin(θ)/λ of 3.3-3.7 Å-1. The volume-averaged pair-correlation statistics of as-implanted and relaxed ion-implanted amorphous silicon are virtually indistinguishable with coordination numbers of 3.7 ± 0.3 and 3.9 ± 0.3 (for neighbors closer than 3 Å) and average bond angles of 109 ± 0.5° and 110 ± 0.6°, respectively. The atomic rearrangements in ion-implanted amorphous silicon due to a low temperature anneal are subtle.
authors.affiliation: School of Physics, Monash University, Clayton, Victoria 3800, Australia.
authors.forename: Alexander
authors.initials: A
authors.lastname: Gorecki
authors.affiliation: School of Physics, Monash University, Clayton, Victoria 3800, Australia.
authors.forename: Amelia C Y
authors.initials: AC
authors.lastname: Liu
authors.affiliation: School of Physics, Monash University, Clayton, Victoria 3800, Australia.
authors.forename: Timothy C
authors.initials: TC
authors.lastname: Petersen