title: Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties.
abstract: Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.
authors.affiliation: Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, 510631, People's Republic of China. lishuti@scnu.edu.cn.
authors.forename: Xingfu
authors.initials: X
authors.lastname: Wang
authors.forename: Jinhui
authors.initials: J
authors.lastname: Tong
authors.forename: Xin
authors.initials: X
authors.lastname: Chen
authors.forename: Bijun
authors.initials: B
authors.lastname: Zhao
authors.forename: Zhiwei
authors.initials: Z
authors.lastname: Ren
authors.forename: Danwei
authors.initials: D
authors.lastname: Li
authors.forename: Xiangjing
authors.initials: X
authors.lastname: Zhuo
authors.forename: Jun
authors.initials: J
authors.lastname: Zhang
authors.forename: Hanxiang
authors.initials: H
authors.lastname: Yi
authors.forename: Chao
authors.initials: C
authors.lastname: Liu
authors.forename: Fang
authors.initials: F
authors.lastname: Fang
authors.forename: Shuti
authors.initials: S
authors.lastname: Li