title: Spatial atmospheric atomic layer deposition of Al(x)Zn(1-x)O.
abstract: The possibility of growing multicomponent oxides by spatial atmospheric atomic layer deposition has been investigated. To this end, Al(x)Zn(1-x)O films have been deposited using diethyl zinc (DEZ), trimethyl aluminum (TMA), and water as Zn, Al, and O precursors, respectively. When the metal precursors (i.e., TMA and DEZ) are coinjected in the deposition region, the Al/(Al + Zn) ratio can be accurately controlled by either varying the TMA flow to the reactor or the exposure time of the substrate to the precursors. A high doping efficiency level (up to 70%) is achieved in Al-doped ZnO, resulting in films with a high carrier density (5 × 10(20) cm(-3)), low resistivity (2 × 10(-3) Ω cm), and good optical transparency (>85%) in the visible range. The morphology of the films changes from polycrystalline, in conductive i-ZnO and Al-doped ZnO, to amorphous, in highly resistive Al-rich films. The unique combination of the fine tuning of the composition, morphology, and electrical properties of the films with high deposition rates (>0.2 nm/s) paves the way for spatial ALD as an emerging disruptive technique for the growth of multicomponent oxides over large areas.
authors.affiliation: Holst Centre/TNO Thin Film Technology , P.O. Box 6235, 5600 HE Eindhoven, The Netherlands.
authors.forename: A
authors.initials: A
authors.lastname: Illiberi
authors.forename: R
authors.initials: R
authors.lastname: Scherpenborg
authors.forename: Y
authors.initials: Y
authors.lastname: Wu
authors.forename: F
authors.initials: F
authors.lastname: Roozeboom
authors.forename: P
authors.initials: P
authors.lastname: Poodt