title: Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes.
abstract: We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs.
authors.forename: Kyoeng Heon
authors.initials: KH
authors.lastname: Kim
authors.forename: Ho-Myoung
authors.initials: HM
authors.lastname: An
authors.forename: Hee-Dong
authors.initials: HD
authors.lastname: Kim
authors.affiliation: School of Electrical Engineering, Korea University, Seoul 136-713, Korea. tgkim1@korea.ac.kr.
authors.forename: Tae Geun
authors.initials: TG
authors.lastname: Kim