title: Morphology and composition controlled Ga(x)In(1-x)Sb nanowires: understanding ternary antimonide growth.
abstract: Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is extensively studied over the entire compositional range (from 3 to ~100% of In). Second, the obtained compositional results are explained by a kinetic model, suggesting an Arrhenius-type behavior for the trimethylindium (TMIn) precursor. Third, the particle composition is fully investigated and the implications for growth are discussed with reference to our calculated Au-Ga-In phase diagram. Fourth, a mechanism is presented to explain the temperature-dependent morphology and radial growth of the GaxIn1-xSb nanowires. Finally, we demonstrate homogeneous compositions in both axial and radial directions and the nanowires remain entirely twin-free zinc blende. The understanding gained from this study together with the potential to precisely tailor the band gap, wavelength and carrier mobilities allows fabrication of various GaxIn1-xSb-based nanowire devices.
authors.affiliation: Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden. sepideh.gorji@ftf.lth.se.
authors.forename: Sepideh Gorji
authors.initials: SG
authors.lastname: Ghalamestani
authors.forename: Martin
authors.initials: M
authors.lastname: Ek
authors.forename: Masoomeh
authors.initials: M
authors.lastname: Ghasemi
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff
authors.forename: Jonas
authors.initials: J
authors.lastname: Johansson
authors.forename: Kimberly A
authors.initials: KA
authors.lastname: Dick