title: Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics.
abstract: We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon. The structure theoretically exhibits many electronic and optical advantages in laser design, and microdisk resonators using these structures can be precisely fabricated away from highly defective regions in the Ge buffer using a novel etch-stop process. Photoluminescence measurements on 2.7 μm diameter microdisks reveal sharp whispering-gallery-mode resonances (Q > 340) with strong luminescence.
authors.affiliation: Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States.
authors.forename: Robert
authors.initials: R
authors.lastname: Chen
authors.forename: Suyog
authors.initials: S
authors.lastname: Gupta
authors.forename: Yi-Chiau
authors.initials: YC
authors.lastname: Huang
authors.forename: Yijie
authors.initials: Y
authors.lastname: Huo
authors.forename: Charles W
authors.initials: CW
authors.lastname: Rudy
authors.forename: Errol
authors.initials: E
authors.lastname: Sanchez
authors.forename: Yihwan
authors.initials: Y
authors.lastname: Kim
authors.forename: Theodore I
authors.initials: TI
authors.lastname: Kamins
authors.forename: Krishna C
authors.initials: KC
authors.lastname: Saraswat
authors.forename: James S
authors.initials: JS
authors.lastname: Harris