title: Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys.
abstract: ZnSn1-x Gex N2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio.
authors.affiliation: T. J. Watson Laboratories of Applied Physics, California Institute of Technology Pasadena, CA, 91125, USA; Joint Center for Artificial Photosynthesis, CA.
authors.forename: Prineha
authors.initials: P
authors.lastname: Narang
authors.forename: Shiyou
authors.initials: S
authors.lastname: Chen
authors.forename: Naomi C
authors.initials: NC
authors.lastname: Coronel
authors.forename: Sheraz
authors.initials: S
authors.lastname: Gul
authors.forename: Junko
authors.initials: J
authors.lastname: Yano
authors.forename: Lin-Wang
authors.initials: LW
authors.lastname: Wang
authors.forename: Nathan S
authors.initials: NS
authors.lastname: Lewis
authors.forename: Harry A
authors.initials: HA
authors.lastname: Atwater
keywords: Zn(Sn,Ge)N2 semiconductor alloys; bandgap; miscibility