title: Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates.
abstract: By using near-equilibrium chemical vapor deposition, it is demonstrated that high-quality single-crystal graphene can be grown on dielectric substrates. The maximum size is about 11 μm. The carrier mobility can reach about 5650 cm(2) V(-1) s(-1) , which is comparable to those of some metal-catalyzed graphene crystals, reflecting the good quality of the graphene lattice.
authors: Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors: Jianyi
authors: J
authors: Chen
authors: Yunlong
authors: Y
authors: Guo
authors: Lili
authors: L
authors: Jiang
authors: Zhiping
authors: Z
authors: Xu
authors: Liping
authors: L
authors: Huang
authors: Yunzhou
authors: Y
authors: Xue
authors: Dechao
authors: D
authors: Geng
authors: Bin
authors: B
authors: Wu
authors: Wenping
authors: W
authors: Hu
authors: Gui
authors: G
authors: Yu
authors: Yunqi
authors: Y
authors: Liu
keywords: chemical vapor deposition; dielectric substrates; near-equilibrium; single-crystal graphene