title: Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.
abstract: We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon photonics.
authors: William S
authors: WS
authors: Fegadolli
authors: Se-Heon
authors: SH
authors: Kim
authors: Pablo Aitor
authors: PA
authors: Postigo
authors: Axel
authors: A
authors: Scherer
mesh_terms: D017076:Computer-Aided Design; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D008904:Miniaturization; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D036103:Nanotechnology / Q000295:instrumentation*; D010316:Particle Size; D010720:Phosphines / Q000737:chemistry*; D045663:Quantum Dots; D012825:Silicon / Q000737:chemistry*
chemical_list: D010720:Phosphines; D007204:Indium; C090882:indium phosphide; D012825:Silicon