title: Arrayed narrow linewidth erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss silicon-nitride platform.
abstract: We demonstrate an array of erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss Si(3)N(4) platform. Sidewall gratings providing the lasing feedback are defined in the silicon-nitride layer using 248 nm stepper lithography, while the gain is provided by a reactive co-sputtered erbium-doped aluminum-oxide layer. We observe lasing output over a 12 nm wavelength range (1531-1543 nm) from the array of five separate lasers. Output powers of 8 μW and lasing linewidths of 501 kHz are obtained. Single-mode operation is confirmed, with side-mode suppression ratios over 35 dB for all designs.
authors: Michael
authors: M
authors: Belt
authors: Taran
authors: T
authors: Huffman
authors: Michael L
authors: ML
authors: Davenport
authors: Wenzao
authors: W
authors: Li
authors: Jonathon S
authors: JS
authors: Barton
authors: Daniel J
authors: DJ
authors: Blumenthal