title: 1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure.
abstract: InGaAs/GaAs multiple quantum well (MQW)-depleted optical thyristor lasers operating at 1.06 μm with a waveguide-type PiNiN structure is presented for the first time. The optical thyristor lasers clearly show nonlinear S-shaped current-voltage and lasing characteristics. The measured switching voltage and current are 5 V and 1 mA, respectively. The holding voltage and current are 2.6 V and 3.6 mA, respectively. A relatively high output light power of 30 mW per facet at room temperature is achieved. The lasing wavelength is 1.055 μm at a bias current of 80 mA at 25 °C.
authors: Huolei
authors: H
authors: Wang
authors: Junping
authors: J
authors: Mi
authors: Xuliang
authors: X
authors: Zhou
authors: Laura
authors: L
authors: Meriggi
authors: Matthew
authors: M
authors: Steer
authors: Bifeng
authors: B
authors: Cui
authors: Weixi
authors: W
authors: Chen
authors: Jiaoqing
authors: J
authors: Pan
authors: Ying
authors: Y
authors: Ding