title: Enhanced electron transport in Nb-doped TiO2 nanoparticles via pressure-induced phase transitions.
abstract: Anatase TiO2 is one of the most important energy materials but suffers from poor electrical conductivity. Nb doping has been considered as an effective way to improve its performance in the applications of photocatalysis, solar cells, Li batteries, and transparent conducting oxide films. Here, we report the further enhancement of electron transport in Nb-doped TiO2 nanoparticles via pressure-induced phase transitions. The phase transition behavior and influence of Nb doping in anatase Nb-TiO2 have been systematically investigated by in situ synchrotron X-ray diffraction and Raman spectroscopy. The bulk moduli are determined to be 179.5, 163.3, 148.3, and 139.0 GPa for 0, 2.5, 5.0, and 10.0 mol % Nb-doped TiO2, respectively. The Nb-concentration-dependent stiffness variation has been demonstrated: samples with higher Nb concentrations have lower stiffness. In situ resistance measurements reveal an increase of 40% in conductivity of quenched Nb-TiO2 in comparison to the pristine anatase phase. The pressure-induced conductivity evolution is discussed in detail in terms of the packing factor model, which provides direct evidence for the rationality of the correlation of packing factors with electron transport in semiconductors. Pressure-treated Nb-doped TiO2 with unique properties surpassing those in the anatase phase holds great promise for energy-related applications.
authors: High Pressure Science and Engineering Center, University of Nevada , Las Vegas, Nevada 89154, United States.
authors: Xujie
authors: X
authors: Lü
authors: Wenge
authors: W
authors: Yang
authors: Zewei
authors: Z
authors: Quan
authors: Tianquan
authors: T
authors: Lin
authors: Ligang
authors: L
authors: Bai
authors: Lin
authors: L
authors: Wang
authors: Fuqiang
authors: F
authors: Huang
authors: Yusheng
authors: Y
authors: Zhao