title: Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces.
abstract: Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2 -terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V(-1) s(-1) are achieved at this novel oxide interface.
authors: Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, 4000, Roskilde, Denmark.
authors: Y Z
authors: YZ
authors: Chen
authors: N
authors: N
authors: Bovet
authors: T
authors: T
authors: Kasama
authors: W W
authors: WW
authors: Gao
authors: S
authors: S
authors: Yazdi
authors: C
authors: C
authors: Ma
authors: N
authors: N
authors: Pryds
authors: S
authors: S
authors: Linderoth
keywords: alumina; complex oxide; oxide interfaces; strontium titanate; two-dimensional electron gases