title: Furan fused V-shaped organic semiconducting materials with high emission and high mobility.
abstract: We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2',3'-d]furan (DNF-V) derivatives. DNF-V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF-V derivatives showed an excellent carrier mobility of up to 1.3 cm(2) V(-1) s(-1), thereby proving to be a new solution-processable active organic semiconductor with high emission and high mobility.
authors: The Institute of Scientific and Industrial Research (ISIR), Osaka Univ., 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
authors: Katsumasa
authors: K
authors: Nakahara
authors: Chikahiko
authors: C
authors: Mitsui
authors: Toshihiro
authors: T
authors: Okamoto
authors: Masakazu
authors: M
authors: Yamagishi
authors: Hiroyuki
authors: H
authors: Matsui
authors: Takanari
authors: T
authors: Ueno
authors: Yuji
authors: Y
authors: Tanaka
authors: Masafumi
authors: M
authors: Yano
authors: Takeshi
authors: T
authors: Matsushita
authors: Junshi
authors: J
authors: Soeda
authors: Yuri
authors: Y
authors: Hirose
authors: Hiroyasu
authors: H
authors: Sato
authors: Akihito
authors: A
authors: Yamano
authors: Jun
authors: J
authors: Takeya