title: Suppression of free carrier absorption in silicon using multislot SiO2/nc-Si waveguides.
abstract: Free carrier absorption (FCA) in silicon is the major obstacle toward achieving optical gain in Si nanostructure systems. In this Letter, we present experimental results of pump-induced loss for TE and TM polarization in multislot SiO2/nc-Si waveguides. Continuous wavelength and ultrafast studies of carriers excited in the nc-Si multilayers reveal strong suppression of transmission loss related to FCA in Si nanostructures for TM-polarized probe light. We demonstrate theoretically and experimentally that FCA may be reduced under TM polarization as much as 9 times compared to TE polarization.
authors: Yijing
authors: Y
authors: Fu
authors: Halina
authors: H
authors: Krzyżanowska
authors: Karl S
authors: KS
authors: Ni
authors: Philippe M
authors: PM
authors: Fauchet
mesh_terms: D000042:Absorption; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008027:Light; D008422:Materials Testing; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D012542:Scattering, Radiation; D012825:Silicon / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D020349:Surface Plasmon Resonance / Q000295:instrumentation*
chemical_list: D012822:Silicon Dioxide; D012825:Silicon