title: Facile preparation of an n-type reduced graphene oxide field effect transistor at room temperature.
abstract: We introduce a facile method to prepare an n-type reduced graphene oxide field effect transistor at room temperature via a typical Benkeser reduction using lithium and ethylenediamine.
authors: National Creative Research Initiative, Center for Smart Molecular Memory, Department of Chemistry and Energy Science and SKKU Advanced Institute Nano Technology, Sungkyunkwan University, 2066 Seoburo, Jangan-Gu, Suwon, Gyeonggi-Do 440-746, South Korea. hyoyoung@skku.edu.
authors: Luyang
authors: L
authors: Wang
authors: Younghun
authors: Y
authors: Park
authors: Peng
authors: P
authors: Cui
authors: Sora
authors: S
authors: Bak
authors: Hanleem
authors: H
authors: Lee
authors: Sae Mi
authors: SM
authors: Lee
authors: Hyoyoung
authors: H
authors: Lee