title: A multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure.
abstract: Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB solar cell shows a wide photovoltaic response from the UV to the near-IR region. This work opens up an interesting opportunity for high-efficiency IB solar cells in the photovoltaics field.
authors: International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan; JST-PRESTO, Japan Science and Technology Agency, Chiyoda, Tokyo, 102-0076, Japan.
authors: Liwen
authors: L
authors: Sang
authors: Meiyong
authors: M
authors: Liao
authors: Qifeng
authors: Q
authors: Liang
authors: Masaki
authors: M
authors: Takeguchi
authors: Benjamin
authors: B
authors: Dierre
authors: Bo
authors: B
authors: Shen
authors: Takashi
authors: T
authors: Sekiguchi
authors: Yasuo
authors: Y
authors: Koide
authors: Masatomo
authors: M
authors: Sumiya
keywords: InGaN; intermediate-band; multilevel; solar cell