title: 2-dimensional transition metal dichalcogenides with tunable direct band gaps: MoS₂(₁-x) Se₂x monolayers.
abstract: MoS2(1-x) Se2x single-layer films are prepared using a mixture of organic selenium and sulfur precursors as well as a solid molybdenum source. The direct bandgaps are found to scale nearly linearly with composition in the range of 1.87 eV (pure single-layer MoS2 ) to 1.55 eV (pure single-layer MoSe2 ) permitting straightforward bandgap engineering.
authors: Chemistry, Physics, Electrical Engineering and Materials Science and Engineering, University of California, Riverside, CA, 92521, USA.
authors: John
authors: J
authors: Mann
authors: Quan
authors: Q
authors: Ma
authors: Patrick M
authors: PM
authors: Odenthal
authors: Miguel
authors: M
authors: Isarraraz
authors: Duy
authors: D
authors: Le
authors: Edwin
authors: E
authors: Preciado
authors: David
authors: D
authors: Barroso
authors: Koichi
authors: K
authors: Yamaguchi
authors: Gretel
authors: G
authors: von Son Palacio
authors: Andrew
authors: A
authors: Nguyen
authors: Tai
authors: T
authors: Tran
authors: Michelle
authors: M
authors: Wurch
authors: Ariana
authors: A
authors: Nguyen
authors: Velveth
authors: V
authors: Klee
authors: Sarah
authors: S
authors: Bobek
authors: Dezheng
authors: D
authors: Sun
authors: Tony F
authors: TF
authors: Heinz
authors: Talat S
authors: TS
authors: Rahman
authors: Roland
authors: R
authors: Kawakami
authors: Ludwig
authors: L
authors: Bartels
keywords: CVD; alloys; atomically thin films; bandgap engineering; molybdenum diselenide; molybdenum disulfide; transition metal dichalcogenides