title: Stable, efficient, and all-solution-processed quantum dot light-emitting diodes with double-sided metal oxide nanoparticle charge transport layers.
abstract: An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cd/m(2) at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cd/A, and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device.
authors: LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, ‡School of Physical and Mathematical Sciences, and §School of Mechanical and Aerospace Engineering, Nanyang Technological University , Nanyang Avenue, Singapore 639798.
authors: Xuyong
authors: X
authors: Yang
authors: Yanyan
authors: Y
authors: Ma
authors: Evren
authors: E
authors: Mutlugun
authors: Yongbiao
authors: Y
authors: Zhao
authors: Kheng Swee
authors: KS
authors: Leck
authors: Swee Tiam
authors: ST
authors: Tan
authors: Hilmi Volkan
authors: HV
authors: Demir
authors: Qinyuan
authors: Q
authors: Zhang
authors: Hejun
authors: H
authors: Du
authors: Xiao Wei
authors: XW
authors: Sun