title: Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.
abstract: To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model.
authors: Kuan-Chang
authors: KC
authors: Chang
authors: Department of Physics, R,O,C, Military Academy, Kaohsiung, Taiwan. rewink@mail.cma.edu.tw.
authors: Jen-Wei
authors: JW
authors: Huang
authors: Ting-Chang
authors: TC
authors: Chang
authors: Tsung-Ming
authors: TM
authors: Tsai
authors: Kai-Huang
authors: KH
authors: Chen
authors: Tai-Fa
authors: TF
authors: Young
authors: Jung-Hui
authors: JH
authors: Chen
authors: Rui
authors: R
authors: Zhang
authors: Jen-Chung
authors: JC
authors: Lou
authors: Syuan-Yong
authors: SY
authors: Huang
authors: Yin-Chih
authors: YC
authors: Pan
authors: Hui-Chun
authors: HC
authors: Huang
authors: Yong-En
authors: YE
authors: Syu
authors: Der-Shin
authors: DS
authors: Gan
authors: Ding-Hua
authors: DH
authors: Bao
authors: Simon M
authors: SM
authors: Sze