title: Low-temperature-grown InGaAs terahertz photomixer embedded in InP thermal spreading layer regrown by metalorganic chemical vapor deposition.
abstract: A novel buried photomixer for integrated photonic terahertz devices is proposed. The active region of the mesa-structure InGaAs photomixer is buried in an InP layer grown by metalorganic chemical vapor deposition (MOCVD) to improve heat dissipation, which is an important problem for terahertz photomixers. The proposed photomixer shows good thermal properties compared to a conventional planar-type photomixer. The MOCVD regrowth process indicates the possibility for THz photomixers to be integrated monolithically with conventional photonic devices.
authors.forename: Kiwon
authors.initials: K
authors.lastname: Moon
authors.forename: Dong Woo
authors.initials: DW
authors.lastname: Park
authors.forename: Il-Min
authors.initials: IM
authors.lastname: Lee
authors.forename: Namje
authors.initials: N
authors.lastname: Kim
authors.forename: Hyunsung
authors.initials: H
authors.lastname: Ko
authors.forename: Sang-Pil
authors.initials: SP
authors.lastname: Han
authors.forename: Donghun
authors.initials: D
authors.lastname: Lee
authors.forename: Jeong-Woo
authors.initials: JW
authors.lastname: Park
authors.forename: Sam Kyu
authors.initials: SK
authors.lastname: Noh
authors.forename: Kyung Hyun
authors.initials: KH
authors.lastname: Park