title: X-ray absorption near-edge structure anomalous behaviour in structures with buried layers containing silicon nanocrystals.
abstract: Substructure and phase composition of silicon suboxide films containing silicon nanocrystals and implanted with carbon have been investigated by means of the X-ray absorption near-edge structure technique with the use of synchrotron radiation. It is shown that formation of silicon nanocrystals in the films' depth (more than 60 nm) and their following transformation into silicon carbide nanocrystals leads to abnormal behaviour of the X-ray absorption spectra in the elementary silicon absorption-edge energy region (100-104 eV) or in the silicon oxide absorption-edge energy region (104-110 eV). This abnormal behaviour is connected to X-ray elastic backscattering on silicon or silicon carbide nanocrystals located in the silicon oxide films depth.
authors.affiliation: Solid State Physics and Nanostructures Department, Voronezh State University, Universitetskaya pl. 1, Voronezh 394006, Russian Federation.
authors.forename: V A
authors.initials: VA
authors.lastname: Terekhov
authors.affiliation: Lobachevsky State University of Nizhni Novgorod, Pr.Gagarina23, Nizhni Novgorod 603950, Russian Federation.
authors.forename: D I
authors.initials: DI
authors.lastname: Tetelbaum
authors.affiliation: Solid State Physics and Nanostructures Department, Voronezh State University, Universitetskaya pl. 1, Voronezh 394006, Russian Federation.
authors.forename: D E
authors.initials: DE
authors.lastname: Spirin
authors.affiliation: Solid State Physics and Nanostructures Department, Voronezh State University, Universitetskaya pl. 1, Voronezh 394006, Russian Federation.
authors.forename: K N
authors.initials: KN
authors.lastname: Pankov
authors.affiliation: Lobachevsky State University of Nizhni Novgorod, Pr.Gagarina23, Nizhni Novgorod 603950, Russian Federation.
authors.forename: A N
authors.initials: AN
authors.lastname: Mikhailov
authors.affiliation: Lobachevsky State University of Nizhni Novgorod, Pr.Gagarina23, Nizhni Novgorod 603950, Russian Federation.
authors.forename: A I
authors.initials: AI
authors.lastname: Belov
authors.affiliation: Lobachevsky State University of Nizhni Novgorod, Pr.Gagarina23, Nizhni Novgorod 603950, Russian Federation.
authors.forename: A V
authors.initials: AV
authors.lastname: Ershov
authors.affiliation: Solid State Physics and Nanostructures Department, Voronezh State University, Universitetskaya pl. 1, Voronezh 394006, Russian Federation.
authors.forename: S Yu
authors.initials: SY
authors.lastname: Turishchev
keywords: X-ray absorption inversion phenomenon; XANES; silicon nanocrystals