title: Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.
abstract: We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.
authors.affiliation: Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Li
authors.initials: L
authors.lastname: Ji
authors.forename: Yao-Feng
authors.initials: YF
authors.lastname: Chang
authors.forename: Burt
authors.initials: B
authors.lastname: Fowler
authors.forename: Ying-Chen
authors.initials: YC
authors.lastname: Chen
authors.forename: Tsung-Ming
authors.initials: TM
authors.lastname: Tsai
authors.forename: Kuan-Chang
authors.initials: KC
authors.lastname: Chang
authors.forename: Min-Chen
authors.initials: MC
authors.lastname: Chen
authors.forename: Ting-Chang
authors.initials: TC
authors.lastname: Chang
authors.forename: Simon M
authors.initials: SM
authors.lastname: Sze
authors.forename: Edward T
authors.initials: ET
authors.lastname: Yu
authors.forename: Jack C
authors.initials: JC
authors.lastname: Lee