title: Detection of Berry's phase in a Bulk Rashba semiconductor.
abstract: The motion of electrons in a solid has a profound effect on its topological properties and may result in a nonzero Berry's phase, a geometric quantum phase encoded in the system's electronic wave function. Despite its ubiquity, there are few experimental observations of Berry's phase of bulk states. Here, we report detection of a nontrivial π Berry's phase in the bulk Rashba semiconductor BiTeI via analysis of the Shubnikov-de Haas (SdH) effect. The extremely large Rashba splitting in this material enables the separation of SdH oscillations, stemming from the spin-split inner and outer Fermi surfaces. For both Fermi surfaces, we observe a systematic π-phase shift in SdH oscillations, consistent with the theoretically predicted nontrivial π Berry's phase in Rashba systems.
authors.affiliation: RIKEN Center for Emergent Matter Science (Center for Emergent Matter Science), Wako 351-0198, Japan.
authors.forename: H
authors.initials: H
authors.lastname: Murakawa
authors.forename: M S
authors.initials: MS
authors.lastname: Bahramy
authors.forename: M
authors.initials: M
authors.lastname: Tokunaga
authors.forename: Y
authors.initials: Y
authors.lastname: Kohama
authors.forename: C
authors.initials: C
authors.lastname: Bell
authors.forename: Y
authors.initials: Y
authors.lastname: Kaneko
authors.forename: N
authors.initials: N
authors.lastname: Nagaosa
authors.forename: H Y
authors.initials: HY
authors.lastname: Hwang
authors.forename: Y
authors.initials: Y
authors.lastname: Tokura