title: Donor-like surface traps on two-dimensional electron gas and current collapse of AlGaN/GaN HEMTs.
abstract: The effect of donor-like surface traps on two-dimensional electron gas (2DEG) and drain current collapse of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated in detail. The depletion of 2DEG by the donor-like surface states is shown. The drain current collapse is found to be more sensitive to the addition of positive surface charges. Surface trap states with higher energy levels result in weaker current collapse and faster collapse process. By adopting an optimized backside doping scheme, the electron density of 2DEG has been improved greatly and the current collapse has been greatly eliminated. These results give reference to the improvement in device performance of AlGaN/GaN HEMTs.
authors.affiliation: Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China.
authors.forename: Chen-hui
authors.initials: CH
authors.lastname: Yu
authors.affiliation: School of Remote Sensing, Nanjing University of Information Science and Technology, Nanjing 210044, China.
authors.forename: Qing-zhou
authors.initials: QZ
authors.lastname: Luo
authors.affiliation: Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China ; Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
authors.forename: Xiang-dong
authors.initials: XD
authors.lastname: Luo
authors.affiliation: Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China.
authors.forename: Pei-sheng
authors.initials: PS
authors.lastname: Liu
mesh_terms: D017607:Aluminum Compounds; D004583:Electrons; D005708:Gallium; D014173:Transistors, Electronic
chemical_list: D017607:Aluminum Compounds; C513700:aluminum gallium nitride; D005708:Gallium