title: Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of graphene-based field-effect transistors.
abstract: Viable and general techniques that allow effective size control of triangular-shaped, single-crystal, monolayer h-BN domains grown by the CVD method, direct optical visualization of h-BN domains, and the cleaning of the h-BN surface to achieve reliable graphene device quality are reported for the first time. This study points to a critical role of the interfacial properties between the graphene and the monolayer h-BN in determining reliable, enhanced graphene-device performance.
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China; Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Harbin, 150080, P. R. China.
authors.forename: Lifeng
authors.initials: L
authors.lastname: Wang
authors.forename: Bin
authors.initials: B
authors.lastname: Wu
authors.forename: Jisi
authors.initials: J
authors.lastname: Chen
authors.forename: Hongtao
authors.initials: H
authors.lastname: Liu
authors.forename: Pingan
authors.initials: P
authors.lastname: Hu
authors.forename: Yunqi
authors.initials: Y
authors.lastname: Liu
keywords: chemical vapor deposition; electronic devices; graphene; hexagonal boron nitride; interfaces