title: Vacuum Rabi splitting of exciton-polariton emission in an AlN film.
abstract: The vacuum Rabi splitting of exciton-polariton emission is observed in cathodoluminescence (CL) and photoluminescence spectra of an AlN epitaxial film. Atomic force microscopy and CL measurements show that the film has an atomically flat surface, high purity, and high crystal quality. By changing the temperature, anticrossing behavior between the upper and lower polariton branch can be obtained in low temperature with a Rabi splitting of 44 meV, in agreement with the calculation. This large energy splitting is caused by strong oscillator strength, intrinsically pure polarization in wurtzite AlN semiconductor, and high fraction of free exciton in the sample. These properties indicate that AlN can be a potential semiconductor for the further development of polariton physics and polariton-based novel devices.
authors.affiliation: Funjian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China.
authors.forename: Kongyi
authors.initials: K
authors.lastname: Li
authors.affiliation: Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Weiying
authors.initials: W
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Zhanghai
authors.initials: Z
authors.lastname: Chen
authors.affiliation: Funjian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China.
authors.forename: Na
authors.initials: N
authors.lastname: Gao
authors.affiliation: Funjian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China.
authors.forename: Weihuang
authors.initials: W
authors.lastname: Yang
authors.affiliation: Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.affiliation: Funjian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China.
authors.forename: Hangyang
authors.initials: H
authors.lastname: Chen
authors.affiliation: Funjian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China.
authors.forename: Shuping
authors.initials: S
authors.lastname: Li
authors.affiliation: Funjian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China.
authors.forename: Heng
authors.initials: H
authors.lastname: Li
authors.affiliation: Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Jin
authors.affiliation: Funjian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China.
authors.forename: Junyong
authors.initials: J
authors.lastname: Kang