title: Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.
abstract: GaN green LED was grown on Si (111) substrate by MOCVD. To enhance the quality of InGaN/GaN MQWs, same-temperature (ST) GaN protection layers with different thickness of 8 Å, 15 Å, and 30 Å were induced after the InGaN quantum wells (QWs) layer. Results show that a relative thicker cap layer is benefit to get InGaN QWs with higher In percent at fixed well temperature and obtain better QW/QB interface. As the cap thickness increases, the indium distribution becomes homogeneous as verified by fluorescence microscope (FLM). The interface of MQWs turns to be abrupt from XRD analysis. The intensity of photoluminescence (PL) spectrum is increased and the FWHM becomes narrow.
authors.affiliation: National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China.
authors.forename: Changda
authors.initials: C
authors.lastname: Zheng
authors.affiliation: National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China.
authors.forename: Li
authors.initials: L
authors.lastname: Wang
authors.affiliation: National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China.
authors.forename: Chunlan
authors.initials: C
authors.lastname: Mo
authors.affiliation: National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China.
authors.forename: Wenqing
authors.initials: W
authors.lastname: Fang
authors.affiliation: National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, China.
authors.forename: Fengyi
authors.initials: F
authors.lastname: Jiang
mesh_terms: D004867:Equipment Design; D005708:Gallium; D007204:Indium; D008027:Light; D008029:Lighting / Q000295:instrumentation*; D049449:Luminescence; D008856:Microscopy, Fluorescence; D011789:Quantum Theory; D012825:Silicon; D013696:Temperature; D014961:X-Ray Diffraction
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride; D012825:Silicon