title: Heterogeneously integrated III-V/silicon distributed feedback lasers.
abstract: Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.
authors.forename: S
authors.initials: S
authors.lastname: Keyvaninia
authors.forename: S
authors.initials: S
authors.lastname: Verstuyft
authors.forename: L
authors.initials: L
authors.lastname: Van Landschoot
authors.forename: F
authors.initials: F
authors.lastname: Lelarge
authors.forename: G-H
authors.initials: GH
authors.lastname: Duan
authors.forename: S
authors.initials: S
authors.lastname: Messaoudene
authors.forename: J M
authors.initials: JM
authors.lastname: Fedeli
authors.forename: T
authors.initials: T
authors.lastname: De Vries
authors.forename: B
authors.initials: B
authors.lastname: Smalbrugge
authors.forename: E J
authors.initials: EJ
authors.lastname: Geluk
authors.forename: J
authors.initials: J
authors.lastname: Bolk
authors.forename: M
authors.initials: M
authors.lastname: Smit
authors.forename: G
authors.initials: G
authors.lastname: Morthier
authors.forename: D
authors.initials: D
authors.lastname: Van Thourhout
authors.forename: G
authors.initials: G
authors.lastname: Roelkens