title: In situ and non-volatile bandgap tuning of multilayer graphene oxide in an all-solid-state electric double-layer transistor.
abstract: The sp(2) /sp(3) domain fraction of multilayer graphene oxide (GO) is tuned in situ and in a non-volatile manner by using a proton-induced redox reaction at the interface of GO and the yttria-stabilized zirconia proton-conductor. This method opens the door for transparent, ultrathin, flexible, and low cost carbon-nanoionics devices that can control not only electronic transport, but also other properties such as photoluminescence and optics.
authors.affiliation: International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Tsuchiya
authors.forename: Kazuya
authors.initials: K
authors.lastname: Terabe
authors.forename: Masakazu
authors.initials: M
authors.lastname: Aono
mesh_terms: D006108:Graphite / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry; D011789:Quantum Theory; D014173:Transistors, Electronic; D015040:Zirconium / Q000737:chemistry
chemical_list: D010087:Oxides; D006108:Graphite; D015040:Zirconium; C028541:zirconium oxide
keywords: bandgap tuning; electric double-layer; graphene oxide; nanoionics