title: High-sensitivity photodetectors based on multilayer GaTe flakes.
abstract: Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm(2) V(-1) s(-1). The gate transistor exhibits a high photoresponsivity of 10(4) A/W, which is greatly better than that of graphene, MoS2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.
authors.affiliation: WPI-Advanced Institute for Materials Research (AIMR), Tohoku University , Sendai 980-8577, Japan.
authors.forename: Fucai
authors.initials: F
authors.lastname: Liu
authors.forename: Hidekazu
authors.initials: H
authors.lastname: Shimotani
authors.forename: Hui
authors.initials: H
authors.lastname: Shang
authors.forename: Thangavel
authors.initials: T
authors.lastname: Kanagasekaran
authors.forename: Viktor
authors.initials: V
authors.lastname: Zólyomi
authors.forename: Neil
authors.initials: N
authors.lastname: Drummond
authors.forename: Vladimir I
authors.initials: VI
authors.lastname: Fal'ko
authors.forename: Katsumi
authors.initials: K
authors.lastname: Tanigaki