title: Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings.
abstract: Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.
authors.affiliation: School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University , Jeonju 561-756, Korea.
authors.forename: Lee-Woon
authors.initials: LW
authors.lastname: Jang
authors.forename: Dae-Woo
authors.initials: DW
authors.lastname: Jeon
authors.forename: Tae-Hoon
authors.initials: TH
authors.lastname: Chung
authors.forename: Alexander Y
authors.initials: AY
authors.lastname: Polyakov
authors.forename: Han-Su
authors.initials: HS
authors.lastname: Cho
authors.forename: Jin-Hyeon
authors.initials: JH
authors.lastname: Yun
authors.forename: Jin-Woo
authors.initials: JW
authors.lastname: Ju
authors.forename: Jong-Hyeob
authors.initials: JH
authors.lastname: Baek
authors.forename: Joo-Won
authors.initials: JW
authors.lastname: Choi
authors.forename: In-Hwan
authors.initials: IH
authors.lastname: Lee