title: Highly sensitive hydrazine chemical sensor based on ZnO nanorods field-effect transistor.
abstract: A highly sensitive hydrazine chemical sensor has been fabricated based on a field-effect transistor (FET) by growing vertically-aligned ZnO nanorods directly on silver electrodes. The FET sensor showed a high sensitivity and a low limit of detection (LOD) of 59.175 μA cm(-2)μM(-1) and ~3.86 nM, respectively. This demonstrates a cost effective and low power consuming FET strategy for the detection of hydrazine.
authors.affiliation: Dept. of BIN Fusion Technology, Chonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 561-756, Republic of Korea. ybhahn@chonbuk.ac.kr.
authors.forename: Rafiq
authors.initials: R
authors.lastname: Ahmad
authors.forename: Nirmalya
authors.initials: N
authors.lastname: Tripathy
authors.forename: Da-Un-Jin
authors.initials: DU
authors.lastname: Jung
authors.forename: Yoon-Bong
authors.initials: YB
authors.lastname: Hahn