title: Highly stretchable carbon nanotube transistors with ion gel gate dielectrics.
abstract: Field-effect transistors (FETs) that are stretchable up to 50% without appreciable degradation in performance are demonstrated. The FETs are based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes (CNTs) as the channel, a flexible ion gel as the dielectric, and buckled metal films as electrodes. The buckling of the CNT film enables the high degree of stretchability while the flexible nature of the ion gel allows it to maintain a high quality interface with the CNTs during stretching. An excellent on/off ratio of >10(4), a field-effect mobility of 10 cm(2) · V(-1) · s(-1), and a low operating voltage of <2 V are achieved over repeated mechanical cycling, with further strain accommodation possible. Deformable FETs are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins.
authors.affiliation: Department of Materials Science and Engineering and ‡Department of Electrical and Computer Engineering, University of Wisconsin-Madison , Madison, Wisconsin 53706, United States.
authors.forename: Feng
authors.initials: F
authors.lastname: Xu
authors.forename: Meng-Yin
authors.initials: MY
authors.lastname: Wu
authors.forename: Nathaniel S
authors.initials: NS
authors.lastname: Safron
authors.forename: Susmit Singha
authors.initials: SS
authors.lastname: Roy
authors.forename: Robert M
authors.initials: RM
authors.lastname: Jacobberger
authors.forename: Dominick J
authors.initials: DJ
authors.lastname: Bindl
authors.forename: Jung-Hun
authors.initials: JH
authors.lastname: Seo
authors.forename: Tzu-Hsuan
authors.initials: TH
authors.lastname: Chang
authors.forename: Zhenqiang
authors.initials: Z
authors.lastname: Ma
authors.forename: Michael S
authors.initials: MS
authors.lastname: Arnold