title: Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method.
abstract: Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm(2) Vs(-1) (25 cm(2) Vs(-1) on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.
authors.affiliation: Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0656, USA.
authors.forename: Yongbo
authors.initials: Y
authors.lastname: Yuan
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Gaurav
authors.initials: G
authors.lastname: Giri
authors.affiliation: 1] Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA [2] Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Alexander L
authors.initials: AL
authors.lastname: Ayzner
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Arjan P
authors.initials: AP
authors.lastname: Zoombelt
authors.affiliation: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Stefan C B
authors.initials: SC
authors.lastname: Mannsfeld
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6494, USA.
authors.forename: Jihua
authors.initials: J
authors.lastname: Chen
authors.affiliation: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Dennis
authors.initials: D
authors.lastname: Nordlund
authors.affiliation: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Michael F
authors.initials: MF
authors.lastname: Toney
authors.affiliation: Department of Mechanical and Materials Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0656, USA.
authors.forename: Jinsong
authors.initials: J
authors.lastname: Huang
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Zhenan
authors.initials: Z
authors.lastname: Bao