title: Profiling nanowire thermal resistance with a spatial resolution of nanometers.
abstract: We report a new technique to profile the thermal resistance along a nanowire with a spatial resolution of better than 20 nm. Using this technique, we mapped the thermal conductivity along a Si0.7Ge0.3/NiSi0.7Ge0.3 heterostructured nanowire. We also measured the interfacial thermal resistance (ITR) across the Si/NiSi2 interface embedded in Si/NiSi2 heterostructured nanowires. The ITR does not change even for adjacent interfaces as close as ∼ 50 atomic layers.
authors.affiliation: Department of Physics and Centre for Computational Science and Engineering, National University of Singapore , Singapore 117546, Republic of Singapore.
authors.forename: Dan
authors.initials: D
authors.lastname: Liu
authors.forename: Rongguo
authors.initials: R
authors.lastname: Xie
authors.forename: Nuo
authors.initials: N
authors.lastname: Yang
authors.forename: Baowen
authors.initials: B
authors.lastname: Li
authors.forename: John T L
authors.initials: JT
authors.lastname: Thong