title: Room-temperature near-infrared photodetectors based on single heterojunction nanowires.
abstract: Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 μm), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.
authors.affiliation: Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, and State Key Laboratory of Chemo/Biosensing and Chemometrics (CBSC), Hunan University , Changsha 410082, P. R. China.
authors.forename: Liang
authors.initials: L
authors.lastname: Ma
authors.forename: Wei
authors.initials: W
authors.lastname: Hu
authors.forename: Qinglin
authors.initials: Q
authors.lastname: Zhang
authors.forename: Pinyun
authors.initials: P
authors.lastname: Ren
authors.forename: Xiujuan
authors.initials: X
authors.lastname: Zhuang
authors.forename: Hong
authors.initials: H
authors.lastname: Zhou
authors.forename: Jinyou
authors.initials: J
authors.lastname: Xu
authors.forename: Honglai
authors.initials: H
authors.lastname: Li
authors.forename: Zhengping
authors.initials: Z
authors.lastname: Shan
authors.forename: Xiaoxia
authors.initials: X
authors.lastname: Wang
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.forename: H Q
authors.initials: HQ
authors.lastname: Xu
authors.forename: Anlian
authors.initials: A
authors.lastname: Pan