title: Synthesis of doped InP core-shell nanowires evaluated using hall effect measurements.
abstract: InP core-shell nanowire pn-junctions doped with Zn and Sn have been investigated in terms of growth morphology and shell carrier concentration. The carrier concentrations were evaluated using spatially resolved Hall effect measurements and show improved homogeneity compared to previous investigations, attributed to the use of Sn as the n-type dopant. Anisotropies in the growth rate of different facets are found for different doping levels that in turn affects the migration of Sn and In on the nanowire surface. A route for increasing the In migration length to obtain a more homogeneous shell thickness is presented.
authors.affiliation: Division of Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden.
authors.forename: Magnus
authors.initials: M
authors.lastname: Heurlin
authors.forename: Olof
authors.initials: O
authors.lastname: Hultin
authors.forename: Kristian
authors.initials: K
authors.lastname: Storm
authors.forename: David
authors.initials: D
authors.lastname: Lindgren
authors.forename: Magnus T
authors.initials: MT
authors.lastname: Borgström
authors.forename: Lars
authors.initials: L
authors.lastname: Samuelson