title: High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts.
abstract: Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nanoelectronic, optoelectronic, and spintronic applications. Here, we investigate the field-effect transistor behavior of MoS2 with ferromagnetic contacts to explore its potential for spintronics. In such devices, we elucidate that the presence of a large Schottky barrier resistance at the MoS2/ferromagnet interface is a major obstacle for the electrical spin injection and detection. We circumvent this problem by a reduction in the Schottky barrier height with the introduction of a thin TiO2 tunnel barrier between the ferromagnet and MoS2. This results in an enhancement of the transistor on-state current by 2 orders of magnitude and an increment in the field-effect mobility by a factor of 6. Our magnetoresistance calculation reveals that such integration of ferromagnetic tunnel contacts opens up the possibilities for MoS2-based spintronic devices.
authors.affiliation: Department of Microtechnology and Nanoscience, Chalmers University of Technology , SE-41296, Göteborg, Sweden.
authors.forename: André
authors.initials: A
authors.lastname: Dankert
authors.forename: Lennart
authors.initials: L
authors.lastname: Langouche
authors.forename: Mutta Venkata
authors.initials: MV
authors.lastname: Kamalakar
authors.forename: Saroj Prasad
authors.initials: SP
authors.lastname: Dash