title: Critical factors to achieve low voltage- and capacitance-based organic field-effect transistors.
abstract: Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm(-2) ), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm(2) V(-1) s(-1) , Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.
authors.affiliation: Department of Advanced Fiber Engineering, Inha University, Incheon, 402-751, Korea.
authors.forename: Mi
authors.initials: M
authors.lastname: Jang
authors.forename: Ji Hoon
authors.initials: JH
authors.lastname: Park
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
authors.forename: Se Hyun
authors.initials: SH
authors.lastname: Kim
authors.forename: Hoichang
authors.initials: H
authors.lastname: Yang
keywords: conjugation; low-voltage operation; organic field-effect transistors; pentacene; trap; triethylsilylethynyl anthradithiophene (TES-ADT)