title: Substrate-induced band gap renormalization in semiconducting carbon nanotubes.
abstract: The quasiparticle band gaps of semiconducting carbon nanotubes (CNTs) supported on a weakly-interacting hexagonal boron nitride (h-BN) substrate are computed using density functional theory and the GW Approximation. We find that the direct band gaps of the (7,0), (8,0) and (10,0) carbon nanotubes are renormalized to smaller values in the presence of the dielectric h-BN substrate. The decrease in the band gap is the result of a polarization-induced screening effect, which alters the correlation energy of the frontier CNT orbitals and stabilizes valence band maximum and conduction band minimum. The value of the band gap renormalization is on the order of 0.25 to 0.5 eV in each case. Accounting for polarization-induced band gap changes is crucial in comparing computed values with experiment, since nanotubes are almost always grown on substrates.
authors.affiliation: Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180.
authors.forename: Nicholas A
authors.initials: NA
authors.lastname: Lanzillo
authors.affiliation: Computational Center for Nanotechnology Innovation, Troy, NY 12180, USA.
authors.forename: Neerav
authors.initials: N
authors.lastname: Kharche
authors.affiliation: School of Basic Sciences, Indian Institute of Technology, Bhubaneswar, India 751007.
authors.forename: Saroj K
authors.initials: SK
authors.lastname: Nayak