title: Visible and infra-red light emission in boron-doped wurtzite silicon nanowires.
abstract: Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature.
authors.affiliation: 1] IMEM-CNR Institute, Parco area delle Scienze 37/A, Parma, (Italy) [2].
authors.forename: Filippo
authors.initials: F
authors.lastname: Fabbri
authors.affiliation: IMEM-CNR Institute, Parco area delle Scienze 37/A, Parma, (Italy).
authors.forename: Enzo
authors.initials: E
authors.lastname: Rotunno
authors.affiliation: IMEM-CNR Institute, Parco area delle Scienze 37/A, Parma, (Italy).
authors.forename: Laura
authors.initials: L
authors.lastname: Lazzarini
authors.affiliation: International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, (Japan).
authors.forename: Naoki
authors.initials: N
authors.lastname: Fukata
authors.affiliation: IMEM-CNR Institute, Parco area delle Scienze 37/A, Parma, (Italy).
authors.forename: Giancarlo
authors.initials: G
authors.lastname: Salviati