title: Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories.
abstract: Enhanced resistive switching phenomena of IrOx/GdOx/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd2O3 films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron microscope. Via-hole memory device shows bipolar resistive switching phenomena with a large formation voltage of -6.4 V and high operation current of >1 mA, while the cross-point memory device shows also bipolar resistive switching with low-voltage format of +2 V and self-compliance operation current of <300 μA. Switching mechanism is based on the formation and rupture of conducting filament at the IrOx/GdOx interface, owing to oxygen ion migration. The oxygen-rich GdOx layer formation at the IrOx/GdOx interface will also help control the resistive switching characteristics. This cross-point memory device has also Repeatable 100 DC switching cycles, narrow distribution of LRS/HRS, excellent pulse endurance of >10,000 in every cycle, and good data retention of >104 s. This memory device has great potential for future nanoscale high-density non-volatile memory applications.
authors.forename: Debanjan
authors.initials: D
authors.lastname: Jana
authors.affiliation: Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd, Kwei-Shan, Tao-Yuan 333, Taiwan. sidhu@mail.cgu.edu.tw.
authors.forename: Siddheswar
authors.initials: S
authors.lastname: Maikap
authors.forename: Amit
authors.initials: A
authors.lastname: Prakash
authors.forename: Yi-Yan
authors.initials: YY
authors.lastname: Chen
authors.forename: Hsien-Chin
authors.initials: HC
authors.lastname: Chiu
authors.forename: Jer-Ren
authors.initials: JR
authors.lastname: Yang