title: Room-temperature sub-band gap optoelectronic response of hyperdoped silicon.
abstract: Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation (for example, vacancies and dislocations) with waveguide coupling, or integration with foreign materials. Impurity-mediated sub-band gap photoresponse in silicon is an alternative to these methods but it has only been studied at low temperature. Here we demonstrate impurity-mediated room-temperature sub-band gap photoresponse in single-crystal silicon-based planar photodiodes. A rapid and repeatable laser-based hyperdoping method incorporates supersaturated gold dopant concentrations on the order of 10(20) cm(-3) into a single-crystal surface layer ~150 nm thin. We demonstrate room-temperature silicon spectral response extending to wavelengths as long as 2,200 nm, with response increasing monotonically with supersaturated gold dopant concentration. This hyperdoping approach offers a possible path to tunable, broadband infrared imaging using silicon at room temperature.
authors.affiliation: School of Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors.forename: Jonathan P
authors.initials: JP
authors.lastname: Mailoa
authors.affiliation: School of Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors.forename: Austin J
authors.initials: AJ
authors.lastname: Akey
authors.affiliation: School of Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors.forename: Christie B
authors.initials: CB
authors.lastname: Simmons
authors.affiliation: Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA.
authors.forename: David
authors.initials: D
authors.lastname: Hutchinson
authors.affiliation: US Army ARDEC - Benét Laboratories, 1 Buffington Street, Watervliet, New York 12189, USA.
authors.forename: Jay
authors.initials: J
authors.lastname: Mathews
authors.affiliation: School of Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors.forename: Joseph T
authors.initials: JT
authors.lastname: Sullivan
authors.affiliation: Harvard School of Engineering and Applied Sciences, 29 Oxford Street, Cambridge, Massachusetts 02138, USA.
authors.forename: Daniel
authors.initials: D
authors.lastname: Recht
authors.affiliation: 1] School of Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA [2].
authors.forename: Mark T
authors.initials: MT
authors.lastname: Winkler
authors.affiliation: Research School of Physics and Engineering, The Australian National University, Mills Road, Canberra 0200, Australian Capital Territory, Australia.
authors.forename: James S
authors.initials: JS
authors.lastname: Williams
authors.affiliation: US Army ARDEC - Benét Laboratories, 1 Buffington Street, Watervliet, New York 12189, USA.
authors.forename: Jeffrey M
authors.initials: JM
authors.lastname: Warrender
authors.affiliation: Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA.
authors.forename: Peter D
authors.initials: PD
authors.lastname: Persans
authors.affiliation: Harvard School of Engineering and Applied Sciences, 29 Oxford Street, Cambridge, Massachusetts 02138, USA.
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Aziz
authors.affiliation: School of Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors.forename: Tonio
authors.initials: T
authors.lastname: Buonassisi