title: Influence of Ce substitution for Bi in BiVO4 and the impact on the phase evolution and microwave dielectric properties.
abstract: In the present work, the (Bi1-xCex)VO4 (x ≤ 0.6) ceramics were prepared via a solid-state reaction method and all the ceramic samples could be densified below 900 °C. From the X-ray diffraction analysis, it is found that a monoclinic scheelite solid solution can be formed in the range x ≤ 0.10. In the range 0.20 ≤ x ≤ 0.60, a composite region with both monoclinic scheelite and tetragonal zircon solid solutions was formed and the content of the zircon phase increased with the calcined or sintering temperature. The refined lattice parameters of (Bi0.9Ce0.1)VO4 are a = 5.1801(0) Å, b = 5.0992(1) Å, c = 11.6997(8) Å, and γ = 90.346(0)° with the space group I112/b(15). The VO4 tetrahedron contracts with the substitution of Ce for Bi at the A site, and this helps to keep the specific tetrahedron chain stable in the monoclinic structure. The microwave dielectric permittivity was found to decrease linearly from 68 to about 26.6; meanwhile, the quality factor (Qf) value increased from 8000 GHz to around 23900 GHz as the x value increased from 0 to 0.60. The best microwave dielectric properties were obtained in a (Bi0.75Ce0.25)VO4 ceramic with a permittivity of ∼47.9, a Qf value of ∼18000 GHz, and a near-zero temperature coefficient of ∼+15 ppm/°C at a resonant frequency of around 7.6 GHz at room temperature. Infrared spectral analysis supported that the dielectric contribution for this system at microwave region could be attributed to the absorptions of structural phonon oscillations. This work presents a novel method to modify the temperature coefficient of BiVO4-type materials. This system of microwave dielectric ceramic might be an interesting candidate for microwave dielectric resonator and low-temperature cofired ceramic technology applications.
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, Shaanxi, People's Republic of China.
authors.forename: Di
authors.initials: D
authors.lastname: Zhou
authors.forename: Li-Xia
authors.initials: LX
authors.lastname: Pang
authors.forename: Jing
authors.initials: J
authors.lastname: Guo
authors.forename: Ze-Ming
authors.initials: ZM
authors.lastname: Qi
authors.forename: Tao
authors.initials: T
authors.lastname: Shao
authors.forename: Qiu-Ping
authors.initials: QP
authors.lastname: Wang
authors.forename: Hui-Dong
authors.initials: HD
authors.lastname: Xie
authors.forename: Xi
authors.initials: X
authors.lastname: Yao
authors.forename: Clive A
authors.initials: CA
authors.lastname: Randall