title: A measurement technique for circumventing hysteresis and conductance drift in carbon nanotube field-effect transistors.
abstract: We present a measurement protocol that effectively eliminates both the hysteresis and the temporal drift typically observed in the channel conductance of single-walled carbon nanotube field-effect transistors (SWNT FETs) during the application of gate voltages. Before each resistance measurement, the gate is first stepped through a series of alternating positive and negative voltages to produce a neutral charge distribution within the device. This process is highly effective at removing the hysteresis in the channel conductance, and time-dependent measurements further demonstrate that the drain current is stable and single-valued, independent of the prior measurement history. The effectiveness of this method can be understood within the Preisach hysteresis model, which we demonstrate as a useful framework to predict the observed results.
authors.affiliation: Laboratory for Physical Sciences, University of Maryland, College Park, MD 20742, USA. Department of Physics, University of Maryland, College Park, MD 20742, USA.
authors.forename: Andrew
authors.initials: A
authors.lastname: Tunnell
authors.forename: Vincent
authors.initials: V
authors.lastname: Ballarotto
authors.forename: John
authors.initials: J
authors.lastname: Cumings
mesh_terms: D000465:Algorithms; D015374:Biosensing Techniques; D003460:Crystallization; D004553:Electric Conductivity; D004867:Equipment Design; D036103:Nanotechnology / Q000379:methods*; D037742:Nanotubes, Carbon / Q000737:chemistry*; D010316:Particle Size; D015203:Reproducibility of Results; D014173:Transistors, Electronic
chemical_list: D037742:Nanotubes, Carbon