title: Wafer-scale integration of graphene-based electronic, optoelectronic and electroacoustic devices.
abstract: In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices.
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: He
authors.initials: H
authors.lastname: Tian
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Yang
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Dan
authors.initials: D
authors.lastname: Xie
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Ya-Long
authors.initials: YL
authors.lastname: Cui
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Wen-Tian
authors.initials: WT
authors.lastname: Mi
authors.affiliation: 1] The Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA [2] Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
authors.forename: Yuegang
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Tian-Ling
authors.initials: TL
authors.lastname: Ren