title: On the origin of increased sensitivity and mass resolution using silicon masks in MALDI.
abstract: Since its development, MALDI has proved its performance in the analysis of intact biomolecules up to high molecular weights, regardless of their polarity. Sensitivity of MALDI instruments is a key point for breaking the limits of observing biomolecules of lower abundances. Instrumentation is one way to improve sensitivity by increasing ion transmission and using more sensitive detection systems. On the other side, improving MALDI ion production yields would have important outcomes. MALDI ion production is still not well-controlled and, indeed, the amount of ions produced per laser shot with respect to the total volume of desorbed material is very low. This has particular implications for certain applications, such as MALDI MS imaging where laser beam focusing as fine as possible (5-10 μm) is searched in order to reach higher spatial resolution images. However, various studies point out an intrinsic decrease in signal intensity for strong focusing. We have therefore been interested in developing silicon mask systems to decrease an irradiated area by cutting rather than focusing the laser beam and to study the parameters affecting sensitivity using such systems. For this, we systematically examined variation with laser fluence of intensity and spectral resolution in MALDI of standard peptides when using silicon-etched masks of various aperture sizes. These studies demonstrate a simultaneous increase in spectral resolution and signal intensity. Origin of this effect is discussed in the frame of the two-step ionization model. Experimental data in the low fluence range are fitted with an increase of the primary ionization through matrix-silicon edge contact provided by the masks. On the other hand, behavior at higher fluence could be explained by an effect on the secondary ionization via changes in the plume dynamics.
authors.affiliation: Laboratoire de Spectrométrie de Masse Biologique Fondamentale et Appliquée - EA 4550, Bât SN3, Université Lille 1 , F-59655 Villeneuve d'Ascq Cedex, France.
authors.forename: Laurent
authors.initials: L
authors.lastname: Diologent
authors.forename: Julien
authors.initials: J
authors.lastname: Franck
authors.forename: Maxence
authors.initials: M
authors.lastname: Wisztorski
authors.forename: Anthony
authors.initials: A
authors.lastname: Treizebre
authors.forename: Cristian
authors.initials: C
authors.lastname: Focsa
authors.forename: Isabelle
authors.initials: I
authors.lastname: Fournier
authors.forename: Michael
authors.initials: M
authors.lastname: Ziskind
mesh_terms: D007834:Lasers; D008970:Molecular Weight; D012825:Silicon; D019032:Spectrometry, Mass, Matrix-Assisted Laser Desorption-Ionization / Q000295:instrumentation*
chemical_list: D012825:Silicon