title: Syntheses and properties of nine-ring-fused linear thienoacenes.
abstract: π-Extended nine-ring-fused linear thienoacenes 1a–c with internal thieno[3,2-b;4,5-b′]dithiophene substructures were synthesized. Their optical and electrochemical properties were investigated. Thin-film transistor characteristics showed all compounds displayed high device reproducibility and nearly no dependence on substrate temperatures. The highest performance was observed for 1c-based devices with mobility up to 1.0 cm2/Vs and current on/off ratio of 10(7), whereas the maximum mobility was 0.5 cm2/Vs for 1b and 0.011 cm2/Vs for 1a.
authors.forename: Yu
authors.initials: Y
authors.lastname: Xiong
authors.forename: Xiaolan
authors.initials: X
authors.lastname: Qiao
authors.forename: Hongzhuo
authors.initials: H
authors.lastname: Wu
authors.forename: Qiuliu
authors.initials: Q
authors.lastname: Huang
authors.forename: Qinghe
authors.initials: Q
authors.lastname: Wu
authors.forename: Jie
authors.initials: J
authors.lastname: Li
authors.forename: Xike
authors.initials: X
authors.lastname: Gao
authors.forename: Hongxiang
authors.initials: H
authors.lastname: Li