title: A metal-semiconductor-metal detector based on ZnO nanowires grown on a graphene layer.
abstract: High quality ZnO nanowires (NWs) were grown on a graphene layer by a hydrothermal method. The ZnO NWs revealed higher uniform surface morphology and better structural properties than ZnO NWs grown on SiO2/Si substrate. A low dark current metal-semiconductor-metal photodetector based on ZnO NWs with Au Schottky contact has also been fabricated. The photodetector displays a low dark current of 1.53 nA at 1 V bias and a large UV-to-visible rejection ratio (up to four orders), which are significantly improved compared to conventional ZnO NW photodetectors. The improvement in UV detection performance is attributed to the existence of a surface plasmon at the interface of the ZnO and the graphene.
authors.affiliation: Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China.
authors.forename: Qiang
authors.initials: Q
authors.lastname: Xu
authors.forename: Qijin
authors.initials: Q
authors.lastname: Cheng
authors.forename: Jinxiang
authors.initials: J
authors.lastname: Zhong
authors.forename: Weiwei
authors.initials: W
authors.lastname: Cai
authors.forename: Zifeng
authors.initials: Z
authors.lastname: Zhang
authors.forename: Zhengyun
authors.initials: Z
authors.lastname: Wu
authors.forename: Fengyan
authors.initials: F
authors.lastname: Zhang