title: Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition.
abstract: Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide grown by chemical vapour deposition. We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Because of the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.
authors.affiliation: 1] IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA [2].
authors.forename: Wenjuan
authors.initials: W
authors.lastname: Zhu
authors.affiliation: 1] IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA [2].
authors.forename: Tony
authors.initials: T
authors.lastname: Low
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
authors.forename: Yi-Hsien
authors.initials: YH
authors.lastname: Lee
authors.affiliation: IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA.
authors.forename: Han
authors.initials: H
authors.lastname: Wang
authors.affiliation: IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA.
authors.forename: Damon B
authors.initials: DB
authors.lastname: Farmer
authors.affiliation: Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Boston, Massachusetts 02139, USA.
authors.forename: Jing
authors.initials: J
authors.lastname: Kong
authors.affiliation: Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA.
authors.forename: Fengnian
authors.initials: F
authors.lastname: Xia
authors.affiliation: IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA.
authors.forename: Phaedon
authors.initials: P
authors.lastname: Avouris