title: Ultrafast light induced unusually broad transient absorption in the sub-bandgap region of GeSe2 thin film.
abstract: In this paper, we show for the first time that ultrafast light illumination can induce an unusually broad transient optical absorption (TA), spanning of ≈ 200 nm in the sub-bandgap region of chalcogenide GeSe2 thin films, which we interpret as being a manifestation of creation and annihilation of light induced defects. Further, TA in ultrashort time scales show a maximum at longer wavelength, however blue shifts as time evolves, which provides the first direct evidence of the multiple decay mechanisms of these defects. Detailed global analysis of the kinetic data clearly demonstrates that two and three decay constants are required to quantitatively model the experimental data at ps and ns respectively.
authors.affiliation: Department of Physics, Indian Institute of Science Education and Research, Bhopal 462023, India.
authors.forename: A R
authors.initials: AR
authors.lastname: Barik
authors.affiliation: Department of Physics, Indian Institute of Science Education and Research, Bhopal 462023, India.
authors.forename: Mukund
authors.initials: M
authors.lastname: Bapna
authors.affiliation: Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701-2979, USA.
authors.forename: D A
authors.initials: DA
authors.lastname: Drabold
authors.affiliation: Department of Physics, Indian Institute of Science Education and Research, Bhopal 462023, India.
authors.forename: K V
authors.initials: KV
authors.lastname: Adarsh