title: Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi.
abstract: The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.
authors.affiliation: LPCNO, INSA-UPS-CNRS, Université de Toulouse, 135 Avenue de Rangueil, Toulouse F-31400, France. mazzucat@insa-toulouse.fr.
authors.forename: Simone
authors.initials: S
authors.lastname: Mazzucato
authors.forename: Henri
authors.initials: H
authors.lastname: Lehec
authors.forename: Helene
authors.initials: H
authors.lastname: Carrère
authors.forename: Hajer
authors.initials: H
authors.lastname: Makhloufi
authors.forename: Alexandre
authors.initials: A
authors.lastname: Arnoult
authors.forename: Chantal
authors.initials: C
authors.lastname: Fontaine
authors.forename: Thierry
authors.initials: T
authors.lastname: Amand
authors.forename: Xavier
authors.initials: X
authors.lastname: Marie