title: Porous Silicon-Based Quantum Dot Broad Spectrum Radiation Detector.
abstract: Silicon is a convenient and inexpensive platform for radiation detection, but has low stopping power for x-rays and gamma-rays with high energy (e.g., 100 keV, as used in computed tomography and digital radiography, or 1 MeV, as desired for detection of nuclear materials). We have effectively increased the stopping power of silicon detectors by producing a layer of porous or micro-machined silicon, and infusing this layer with semiconductor quantum dots made of electron-dense materials. Results of prototype detectors show sensitivity to infrared, visible light, and x-rays, with dark current of less than 1 nA/mm2.
authors.affiliation: Weinberg Medical Physics, Bethesda, Maryland, USA.
authors.forename: M
authors.initials: M
authors.lastname: Urdaneta
authors.affiliation: Weinberg Medical Physics, Bethesda, Maryland, USA.
authors.forename: P
authors.initials: P
authors.lastname: Stepanov
authors.affiliation: Weinberg Medical Physics, Bethesda, Maryland, USA.
authors.forename: I N
authors.initials: IN
authors.lastname: Weinberg
authors.affiliation: Chemistry Department, Wayne State University, Detroit, Michigan, USA.
authors.forename: I R
authors.initials: IR
authors.lastname: Pala
authors.affiliation: Chemistry Department, Wayne State University, Detroit, Michigan, USA.
authors.forename: S
authors.initials: S
authors.lastname: Brock
keywords: infrared; lead sulfide; light; multispectrum; nanoparticles; porous silicon; quantum dot; sensor; x-ray