title: Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges.
abstract: By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-layer, in-plane heterostructure of a prototypical material system--graphene and hexagonal boron nitride (h-BN). Monolayer crystalline h-BN grew from fresh edges of monolayer graphene with atomic lattice coherence, forming an abrupt one-dimensional interface, or boundary. More important, the h-BN lattice orientation is solely determined by the graphene, forgoing configurations favored by the supporting copper substrate.
authors.affiliation: The University of Tennessee, Knoxville, TN 37996, USA.
authors.forename: Lei
authors.initials: L
authors.lastname: Liu
authors.forename: Jewook
authors.initials: J
authors.lastname: Park
authors.forename: David A
authors.initials: DA
authors.lastname: Siegel
authors.forename: Kevin F
authors.initials: KF
authors.lastname: McCarty
authors.forename: Kendal W
authors.initials: KW
authors.lastname: Clark
authors.forename: Wan
authors.initials: W
authors.lastname: Deng
authors.forename: Leonardo
authors.initials: L
authors.lastname: Basile
authors.forename: Juan Carlos
authors.initials: JC
authors.lastname: Idrobo
authors.forename: An-Ping
authors.initials: AP
authors.lastname: Li
authors.forename: Gong
authors.initials: G
authors.lastname: Gu