title: Air-stable, solution-processed oxide p-n heterojunction ultraviolet photodetector.
abstract: Air-stable solution processed all-inorganic p-n heterojunction ultraviolet photodetector is fabricated with a high gain (EQE, 25 300%). Solution-processed NiO and ZnO films are used as p-type and n-type ultraviolet sensitizing materials, respectively. The high gain in the detector is due to the interfacial trap-induced charge injection that occurs at the ITO/NiO interface by photogenerated holes trapped in the NiO film. The gain of the detector is controlled by the post-annealing temperature of the solution-processed NiO films, which are studied by X-ray photoelectron spectroscopy (XPS).
authors.affiliation: Department of Materials Science and Engineering, University of Florida , Gainesville, Florida 32611, United States.
authors.forename: Do Young
authors.initials: DY
authors.lastname: Kim
authors.forename: Jiho
authors.initials: J
authors.lastname: Ryu
authors.forename: Jesse
authors.initials: J
authors.lastname: Manders
authors.forename: Jaewoong
authors.initials: J
authors.lastname: Lee
authors.forename: Franky
authors.initials: F
authors.lastname: So