title: Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy.
abstract: InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.
authors.forename: Yi
authors.initials: Y
authors.lastname: Gu
authors.forename: Kai
authors.initials: K
authors.lastname: Wang
authors.forename: Haifei
authors.initials: H
authors.lastname: Zhou
authors.forename: Yaoyao
authors.initials: Y
authors.lastname: Li
authors.forename: Chunfang
authors.initials: C
authors.lastname: Cao
authors.forename: Liyao
authors.initials: L
authors.lastname: Zhang
authors.forename: Yonggang
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China. qgong@mail.sim.ac.cn.
authors.forename: Qian
authors.initials: Q
authors.lastname: Gong
authors.forename: Shumin
authors.initials: S
authors.lastname: Wang