title: Carrier trapping and escape times in p-i-n GaInNAs MQW structures.
abstract: We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling.
authors.affiliation: School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ Colchester, UK. hkhalia@essex.ac.uk.
authors.forename: Hagir M
authors.initials: HM
authors.lastname: Khalil
authors.forename: Naci
authors.initials: N
authors.lastname: Balkan