Effect of Na adsorption on the structural and electronic properties of Si(111)√3 × √3-Au surface.
Adsorption of ∼0.1 ML of Na onto the Si(111)√3 × √3-Au surface held at 300 °C has been found to induce pronounced changes in its structural and electronic properties. Domain wall networks, characteristic of the pristine surface, are removed completely, leading to the formation of a highly ordered homogeneous surface. The original atomic arrangement of the Si(111)√3 × √3-Au is preserved and Na atoms occupy T4 adsorption sites at the centers of surface Si trimers. Upon Na adsorption, a pronounced metallic S1 surface-state band develops. It is characterized by a large spin splitting (momentum splitting at the Fermi level Δk∥ = 0.027 Å(-1) and consequent energy splitting ΔEF = 110 meV), large electron filling (on the order of 0.5 electrons per √3 × √3 unit cell) and small effective electron mass of (0.028 ± 0.006)me. The natural consequence of the latter properties is a high surface conductivity of the Si(111)√3 × √3-(Au, Na) surface.
Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia. School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok, Russia.
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Bondarenko
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Matetskiy
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Yakovlev
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Tupchaya
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Gruznev
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Ryzhkova
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Tsukanov
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Borisenko
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Chukurov
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Denisov
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Vilkov
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Vyalikh
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Zotov
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Saranin