Light trapping and surface plasmon enhanced high-performance NIR photodetector.
Heterojunctions near infrared (NIR) photodetectors have attracted increasing research interests for their wide-ranging applications in many areas such as military surveillance, target detection, and light vision. A high-performance NIR light photodetector was fabricated by coating the methyl-group terminated Si nanowire array with plasmonic gold nanoparticles (AuNPs) decorated graphene film. Theoretical simulation based on finite element method (FEM) reveals that the AuNPs@graphene/CH3-SiNWs array device is capable of trapping the incident NIR light into the SiNWs array through SPP excitation and coupling in the AuNPs decorated graphene layer. What is more, the coupling and trapping of freely propagating plane waves from free space into the nanostructures, and surface passivation contribute to the high on-off ratio as well.
1] School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China [2] Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Lin-Bao
LB
Luo
1] School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China [2] Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Long-Hui
LH
Zeng
1] School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China [2] Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Chao
C
Xie
1] School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China [2] Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Yong-Qiang
YQ
Yu
1] School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China [2] Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Feng-Xia
FX
Liang
1] School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China [2] Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Chun-Yan
CY
Wu
1] School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China [2] Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Li
L
Wang
1] School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China [2] Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
Ji-Gang
JG
Hu