Intrinsic Ge nanowire nonvolatile memory based on a simple core-shell structure.
Intrinsic Ge nanowires (NWs) with a Ge core covered by a thick Ge oxide shell are utilized to achieve nanoscale field-effect transistor nonvolatile memories, which show a large memory window and a high ON/OFF ratio with good retention. The retainable surface charge trapping is considered to be responsible for the memory effect, and the Ge oxide shell plays a key role as the insulating tunneling dielectric which must be thick enough to prevent stored surface charges from leaking out. Annealing the device in air is demonstrated to be a simple and effective way to attain thick Ge oxide on the Ge NW surface, and the Ge-NW-based memory corresponding to thick Ge oxide exhibits a much better retention capability compared with the case of thin Ge oxide.
Institute of Functional Nano and Soft Materials (FUNSOM) and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu 215123, People's Republic of China.
Wen-Hua
WH
Chen
Chang-Hai
CH
Liu
Qin-Liang
QL
Li
Qi-Jun
QJ
Sun
Jie
J
Liu
Xu
X
Gao
Xuhui
X
Sun
Sui-Dong
SD
Wang