Epitaxial growth of molecular crystals on van der waals substrates for high-performance organic electronics.
Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes.
Department of Physics, Columbia University, New York, NY, 10027, USA; Department of Chemistry, Columbia University, New York, NY, 10027, USA.
Chul-Ho
CH
Lee
Theanne
T
Schiros
Elton J G
EJ
Santos
Bumjung
B
Kim
Kevin G
KG
Yager
Seok Ju
SJ
Kang
Sunwoo
S
Lee
Jaeeun
J
Yu
Kenji
K
Watanabe
Takashi
T
Taniguchi
James
J
Hone
Efthimios
E
Kaxiras
Colin
C
Nuckolls
Philip
P
Kim
hexagonal boron nitride (h-BN); organic semiconductors,organic field-effect transistors; rubrene; van der Waals heterostructures