Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier.
The spin memristive devices combining memristance and tunneling magnetoresistance have promising applications in multibit nonvolatile data storage and artificial neuronal computing. However, it is a great challenge for simultaneous realization of large memristance and magnetoresistance in one nanoscale junction, because it is very hard to find a proper spacer layer which not only serves as good insulating layer for tunneling magnetoresistance but also easily switches between high and low resistance states under electrical field. Here we firstly propose to use nanon composite barrier layers of CoO-ZnO to fabricate the spin memristive Co/CoO-ZnO/Co magnetic tunnel junctions. The bipolar resistance switching ratio is high up to 90, and the TMR ratio of the high resistance state gets to 8% at room temperature, which leads to three resistance states. The bipolar resistance switching is explained by the metal-insulator transition of CoO(1-v) layer due to the migration of oxygen ions between CoO(1-v) and ZnO(1-v).
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Qiang
Q
Li
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Ting-Ting
TT
Shen
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Yan-Ling
YL
Cao
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Kun
K
Zhang
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Shi-Shen
SS
Yan
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Yu-Feng
YF
Tian
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Shi-Shou
SS
Kang
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Ming-Wen
MW
Zhao
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
You-Yong
YY
Dai
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Yan-Xue
YX
Chen
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Guo-Lei
GL
Liu
School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Liang-Mo
LM
Mei
Institute of Superconducting and Electrical Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, NSW 2522, Australia.
Xiao-Lin
XL
Wang
Peter Grünberg Institute, Forschungszentrum Jülich, Wilhelm-Johnen-Straβe, Jülich, 52428, Germany.
Peter
P
Grünberg