Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor.
This study examined the performance and photo-bias stability of double-channel ZnSnO/InZnO (ZTO/IZO) thin-film transistors. The field-effect mobility (μFE) and photo-bias stability of the double-channel device were improved by increasing the thickness of the front IZO film (t(int)) compared to the single-ZTO-channel device. A high-mobility (approximately 32.3 cm(2)/Vs) ZTO/IZO transistor with excellent photo-bias stability was obtained from Sn doping of the front IZO layer. First-principles calculations revealed an increase in the formation energy of O vacancy defects in the Sn-doped IZO layer compared to the IZO layer. This observation suggests that the superior photo-bias stability of the double-channel device is due to the effect of Sn doping during thermal annealing. However, these improvements were observed only when t(int) was less than the critical thickness. The rationale for this observation is also discussed based on the oxygen vacancy defect model.
Department of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea.
Hong Yoon
HY
Jung
Department of Materials Science and Engineering and the Research Institute of Advanced Materials, Seoul National University, Seoul 151-742, Republic of Korea.
Youngho
Y
Kang
Department of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea.
Ah Young
AY
Hwang
Department of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea.
Chang Kyu
CK
Lee
Department of Materials Science and Engineering and the Research Institute of Advanced Materials, Seoul National University, Seoul 151-742, Republic of Korea.
Seungwu
S
Han
R&D Center, LG Display Company, Paju-Si, Kyonggi-Do 413-811, Republic of Korea.
Dae-Hwan
DH
Kim
R&D Center, LG Display Company, Paju-Si, Kyonggi-Do 413-811, Republic of Korea.
Jong-Uk
JU
Bae
R&D Center, LG Display Company, Paju-Si, Kyonggi-Do 413-811, Republic of Korea.
Woo-Sup
WS
Shin
Department of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea.
Jae Kyeong
JK
Jeong