Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport.
The coupled imperatives for reduced heat dissipation and power consumption in high-density electronics have rekindled interest in devices based on tunnelling. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, layer uniformity, interface stability and electronic states that severely complicate fabrication and compromise performance. Two-dimensional materials such as graphene obviate these issues and offer a new paradigm for tunnel barriers. Here we demonstrate a homoepitaxial tunnel barrier structure in which graphene serves as both the tunnel barrier and the high-mobility transport channel. We fluorinate the top layer of a graphene bilayer to decouple it from the bottom layer, so that it serves as a single-monolayer tunnel barrier for both charge and spin injection into the lower graphene channel. We demonstrate high spin injection efficiency with a tunnelling spin polarization >60%, lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the Hanle effect.
Materials Science and Technology Division, US Naval Research Laboratory, Washington DC 20375, USA.
Adam L
AL
Friedman
Materials Science and Technology Division, US Naval Research Laboratory, Washington DC 20375, USA.
Olaf M J
OM
van 't Erve
Materials Science and Technology Division, US Naval Research Laboratory, Washington DC 20375, USA.
Connie H
CH
Li
Electronics Science and Technology Division, US Naval Research Laboratory, Washington DC 20375, USA.
Jeremy T
JT
Robinson
Materials Science and Technology Division, US Naval Research Laboratory, Washington DC 20375, USA.
Berend T
BT
Jonker