Construction of a metal-organic monolayer-semiconductor junction on a hydrogen-terminated Si(111) surface via Si-C covalent linkage and its electrical properties.
A metal-organic monolayer-semiconductor junction, exhibiting a diode behaviour, was constructed on a hydrogen-terminated n-type Si(111) by sequential surface reactions of (1) formation of an organic monolayer with a thiol terminal group, (2) platinum deposition onto the thiol group via adsorption of a platinum complex followed by chemical reduction, and finally (3) continuous Ag layer formation by electroless deposition. Rectifying behaviour was observed at this interface.
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan. Uosaki.kohei@nims.go.jp.
K
K
Uosaki
H
H
Fukumitsu
T
T
Masuda
D
D
Qu