Split-gate organic field-effect transistors for high-speed operation.
Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors.
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
T
T
Uemura
T
T
Matsumoto
K
K
Miyake
M
M
Uno
S
S
Ohnishi
T
T
Kato
M
M
Katayama
S
S
Shinamura
M
M
Hamada
M-J
MJ
Kang
K
K
Takimiya
C
C
Mitsui
T
T
Okamoto
J
J
Takeya
contact resistance; organic electronics; organic field-effect transistors