Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance.
The electronic structure and conductance of substitutionally edge-doped zigzag silicene nanoribbons (ZSiNRs) are investigated using the nonequilibrium Green's function method combined with the density functional theory. Two-probe systems of ZSiNRs in both ferromagnetic and antiferromagnetic states are considered. Doping effects of elements from groups III and V, in a parallel or antiparallel magnetic configuration of the two electrodes, are discussed. By switching on and off the external magnetic field, we may convert the metallic ferromagnetic ZSiNRs into insulating antiferromagnetic ZSiNRs. In the ferromagnetic state, even- or odd-width ZSiNRs exhibit a drastically different magnetoresistance. In an odd-width edge-doped ZSiNR a large magnetoresistance occurs compared to that in a pristine ZSiNR. The situation is reversed in even-width ZSiNRs. These phenomena result from the drastic change in the conductance in the antiparallel configuration.
Department of Physics, Soochow University, 1 Shizi Street, Suzhou 215006, China. xf_wang1969@yahoo.com.
An-Bang
AB
Chen
Xue-Feng
XF
Wang
P
P
Vasilopoulos
Ming-Xing
MX
Zhai
Yu-Shen
YS
Liu