Removal of micrometer size morphological defects and enhancement of ultraviolet emission by thermal treatment of Ga-doped ZnO nanostructures.
Mixed morphologies of Ga-doped Zinc Oxide (ZnO) nanostructures are synthesized by vapor transport method. Systematic scanning electron microscope (SEM) studies of different morphologies, after periodic heat treatments, gives direct evidence of sublimation. SEM micrographs give direct evidence that morphological defects of nanostructures can be removed by annealing. Ultra Violet (UV) and visible emission depends strongly on the annealing temperatures and luminescent efficiency of UV emission is enhanced significantly with each subsequent heat treatment. X-Ray diffraction (XRD) results suggest that crystal quality improved by annealing and phase separation may occur at high temperatures.
Alamoudi Water Chair, King Saud University, Riyadh. Kingdom of Saudi Arabia ; Center for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad. Pakistan.
Umair
U
Manzoor
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon. Republic of Korea.
Do K
DK
Kim
College of Engineering, King Saud University, Riyadh, Saudi Arabia.
Mohammad
M
Islam
Center for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad. Pakistan.
Arshad S
AS
Bhatti
D005708:Gallium / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure; D015034:Zinc Oxide / Q000737:chemistry*
D005708:Gallium; D015034:Zinc Oxide