Fabrication of transferable Al(2)O(3) nanosheet by atomic layer deposition for graphene FET.
Without introducing defects in the monolayer of carbon lattice, the deposition of high-κ dielectric material is a significant challenge because of the difficulty of high-quality oxide nucleation on graphene. Previous investigations of the deposition of high-κ dielectrics on graphene have often reported significant degradation of the electrical properties of graphene. In this study, we report a new way to integrate high-κ dielectrics with graphene by transferring a high-κ dielectric nanosheet onto graphene. Al2O3 film was deposited on a sacrificial layer using an atomic layer deposition process and the Al2O3 nanosheet was fabricated by removing the sacrificial layer. Top-gated graphene field-effect transistors were fabricated and characterized using the Al2O3 nanosheet as a gate dielectric. The top-gated graphene was demonstrated to have a field-effect mobility up to 2200 cm(2)/(V s). This method provides a new method for high-performance graphene devices with broad potential impacts reaching from high-frequency high-speed circuits to flexible electronics.
Nanodevice Laboratory, School of Electrical and Electronic Engineering, and §Nanobio Device Laboratory, School of Electrical and Electronic Engineering, Yonsei University , Seodaemun-Gu, Seoul 120-749, Republic of Korea.
Hanearl
H
Jung
Jusang
J
Park
Il-Kwon
IK
Oh
Taejin
T
Choi
Sanggeun
S
Lee
Juree
J
Hong
Taeyoon
T
Lee
Soo-Hyun
SH
Kim
Hyungjun
H
Kim