Observation of edge transport in the disordered regime of topologically insulating InAs/GaSb quantum wells.
We observe edge transport in the topologically insulating InAs/GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall signal at zero magnetic fields, while for symmetric current paths, the conductance between the two mesoscopicly separated probes is quantized to 2e2/h. Both quantized and self-averaged transport show resilience to magnetic fields, and are temperature independent for temperatures between 20 mK and 1 K.
IBM Research-Almaden, San Jose, California 95120, USA.
Ivan
I
Knez
IBM Research-Almaden, San Jose, California 95120, USA.
Charles T
CT
Rettner
IBM Research-Almaden, San Jose, California 95120, USA.
See-Hun
SH
Yang
IBM Research-Almaden, San Jose, California 95120, USA.
Stuart S P
SS
Parkin
Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892, USA.
Lingjie
L
Du
Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892, USA.
Rui-Rui
RR
Du
Teledyne Scientific and Imaging, Thousand Oaks, California 91630, USA.
Gerard
G
Sullivan