All-optical control of ultrafast photocurrents in unbiased graphene.
Graphene has recently become a unique playground for studying light-matter interaction effects in low-dimensional electronic systems. Being of strong fundamental importance, these effects also open a wide range of opportunities in photonics and optoelectronics. In particular, strong and broadband light absorption in graphene allows one to achieve high carrier densities essential for observation of nonlinear optical phenomena. Here, we make use of strong photon-drag effect to generate and optically manipulate ultrafast photocurrents in graphene at room temperature. In contrast to the recent reports on injection of photocurrents in graphene due to external or built-in electric field effects and by quantum interference, we force the massless charge carriers to move via direct transfer of linear momentum from photons of incident laser beam to excited electrons in unbiased sample. Direction and amplitude of the drag-current induced in graphene are determined by polarization, incidence angle and intensity of the obliquely incident laser beam. We also demonstrate that the irradiation of graphene with two laser beams of the same wavelength offers an opportunity to manipulate the photocurrents in time domain. The obtained all-optical control of the photocurrents opens new routes towards graphene based high-speed and broadband optoelectronic devices.
1] A.M. Prokhorov General Physics Institute, Moscow, Russia [2] Institute of Photonics, University of Eastern Finland, Joensuu, Finland.
Petr A
PA
Obraztsov
Institute of Photonics, University of Eastern Finland, Joensuu, Finland.
Tommi
T
Kaplas
A.M. Prokhorov General Physics Institute, Moscow, Russia.
Sergey V
SV
Garnov
Department of Physics, Graduate School of Science and Photon Science Center, The University of Tokyo, Tokyo, Japan.
Makoto
M
Kuwata-Gonokami
1] Department of Physics, M.V. Lomonosov Moscow State University, Moscow, Russia [2] Institute of Photonics, University of Eastern Finland, Joensuu, Finland.
Alexander N
AN
Obraztsov
Institute of Photonics, University of Eastern Finland, Joensuu, Finland.
Yuri P
YP
Svirko