Energy-band engineering for tunable memory characteristics through controlled doping of reduced graphene oxide.
Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.
Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong , Hong Kong, Hong Kong SAR.
Su-Ting
ST
Han
Ye
Y
Zhou
Qing Dan
QD
Yang
Li
L
Zhou
Long-Biao
LB
Huang
Yan
Y
Yan
Chun-Sing
CS
Lee
Vellaisamy A L
VA
Roy