Nanoscale characterization of TiO(2) films grown by atomic layer deposition on RuO(2) electrodes.
Topography and leakage current maps of TiO2 films grown by atomic layer deposition on RuO2 electrodes using either a TiCl4 or a Ti(O-i-C3H7)4 precursor were characterized at nanoscale by conductive atomic force microscopy (CAFM). For both films, the leakage current flows mainly through elevated grains and not along grain boundaries. The overall CAFM leakage current is larger and more localized for the TiCl4-based films (0.63 nm capacitance equivalent oxide thickness, CET) compared to the Ti(O-i-C3H7)4-based films (0.68 nm CET). Both films have a physical thickness of ∼20 nm. The nanoscale leakage currents are consistent with macroscopic leakage currents from capacitor structures and are correlated with grain characteristics observed by topography maps and transmission electron microscopy as well as with X-ray diffraction.
Chair of Electron Devices, University of Erlangen-Nuremberg , Cauerstrasse 6, 91058 Erlangen, Germany.
Katsuhisa
K
Murakami
Mathias
M
Rommel
Boris
B
Hudec
Alica
A
Rosová
Kristína
K
Hušeková
Edmund
E
Dobročka
Raul
R
Rammula
Aarne
A
Kasikov
Jeong Hwan
JH
Han
Woongkyu
W
Lee
Seul Ji
SJ
Song
Albena
A
Paskaleva
Anton J
AJ
Bauer
Lothar
L
Frey
Karol
K
Fröhlich
Jaan
J
Aarik
Cheol Seong
CS
Hwang