Intrinsically switchable, high-Q ferroelectricon-silicon composite film bulk acoustic resonators.
This paper presents a voltage-controlled, highquality factor (Q) composite thin-film bulk acoustic resonator (FBAR) at 1.28 GHz. The composite FBAR consists of a thin layer of barium strontium titanate (BST) that is sandwiched between two electrodes deposited on a silicon-on-insulator (SOI) wafer. The BST layer, which has a strong electrostrictive effect, is used for electromechanical transduction by means of its voltage-induced piezoelectricity. The silicon layer, with its low mechanical loss, increases the Q of the resonator. The composite FBAR presented here exhibits Qs exceeding 800 with a resonance frequency and Q product (f × Q) of 1026 GHz.
Seyit Ahmet
SA
Sis
Seungku
S
Lee
Victor
V
Lee
Adrian K
AK
Bayraktaroglu
Jamie D
JD
Phillips
Amir
A
Mortazawi
D000162:Acoustics / Q000295:instrumentation*; D017097:Electric Impedance; D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D008567:Membranes, Artificial; D055617:Micro-Electrical-Mechanical Systems / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation; D012825:Silicon / Q000737:chemistry*; D014159:Transducers; D014463:Ultrasonography / Q000295:instrumentation*
D008567:Membranes, Artificial; D012825:Silicon