Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.
We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp2 carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp3-type carbon filament through hydrogenation process.
Yi-Jiun
YJ
Chen
Hsin-Lu
HL
Chen
Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan. youngtf@mail.nsysu.edu.tw.
Tai-Fa
TF
Young
Ting-Chang
TC
Chang
Tsung-Ming
TM
Tsai
Kuan-Chang
KC
Chang
Rui
R
Zhang
Kai-Huang
KH
Chen
Jen-Chung
JC
Lou
Tian-Jian
TJ
Chu
Jung-Hui
JH
Chen
Ding-Hua
DH
Bao
Simon M
SM
Sze