Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor.
We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 10(5), a mobility of 0.12 cm(2) V(-1) s(-1) (mean mobility value of 0.07 cm(2) V(-1) s(-1)), and reliable operation.
SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon 440-746, Korea. peterlee@skku.edu.
Youngbin
Y
Lee
Jinhwan
J
Lee
Hunyoung
H
Bark
Il-Kwon
IK
Oh
Gyeong Hee
GH
Ryu
Zonghoon
Z
Lee
Hyungjun
H
Kim
Jeong Ho
JH
Cho
Jong-Hyun
JH
Ahn
Changgu
C
Lee