Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs).
A transport model based on hole-density-dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 10(13) cm(-2) in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free-site channel at low hole density, and in the trap-site channel at larger hole density.
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE, Minneapolis, MN, 55455, USA.
Wei
W
Xie
Feilong
F
Liu
Sha
S
Shi
P Paul
PP
Ruden
C Daniel
CD
Frisbie
conductivity peak; effective medium approximation; electric double layer transistors (EDLTs); electrolyte gating; traps