title: Manipulating topological phase transition by strain.
abstract: First-principles calculations show that strain-induced topological phase transition is a universal phenomenon in those narrow-gap semiconductors for which the valence band maximum (VBM) and conduction band minimum (CBM) have different parities. The transition originates from the opposite responses of the VBM and CBM, whose magnitudes depend critically on the direction of the applied strain. Our work suggests that strain can play a unique role in tuning the electronic properties of topological insulators for device applications, as well as in the achievement of new topological insulators.
authors: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China.
authors: Junwei
authors: J
authors: Liu
authors: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China.
authors: Yong
authors: Y
authors: Xu
authors: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China.
authors: Jian
authors: J
authors: Wu
authors: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China.
authors: Bing-Lin
authors: BL
authors: Gu
authors: Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
authors: S B
authors: SB
authors: Zhang
authors: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China.
authors: Wenhui
authors: W
authors: Duan
keywords: computational materials discovery; conduction band minimum; strain-induced topological phase transition; valence band maximum