title: Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure.
abstract: Low-temperature photoluminescence (PL) spectra of electron-hole systems in Si nanowires (NWs) prepared by thermal oxidization of Si fin structures were studied. Mapping of PL reveals that NWs with uniform width are formed over a large area. Annealing temperature dependence of PL peak intensities was maximized at 400 °C for each NW type, which are consistent with previous reports. Our results confirmed that the micro-PL demonstrated here is one of the important methods for characterizations of the interface defects in Si NWs.
authors: Yoko
authors: Y
authors: Sakurai
authors: Kuniyuki
authors: K
authors: Kakushima
authors: Kenji
authors: K
authors: Ohmori
authors: Keisaku
authors: K
authors: Yamada
authors: Hiroshi
authors: H
authors: Iwai
authors: Kenji
authors: K
authors: Shiraishi
authors: Shintaro
authors: S
authors: Nomura