title: On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.
abstract: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device.
authors: Zabu
authors: Z
authors: Kyaw
authors: Zi-Hui
authors: ZH
authors: Zhang
authors: Wei
authors: W
authors: Liu
authors: Swee Tiam
authors: ST
authors: Tan
authors: Zhen Gang
authors: ZG
authors: Ju
authors: Xue Liang
authors: XL
authors: Zhang
authors: Yun
authors: Y
authors: Ji
authors: Namig
authors: N
authors: Hasanov
authors: Binbin
authors: B
authors: Zhu
authors: Shunpeng
authors: S
authors: Lu
authors: Yiping
authors: Y
authors: Zhang
authors: Xiao Wei
authors: XW
authors: Sun
authors: Hilmi Volkan
authors: HV
authors: Demir
mesh_terms: D004566:Electrodes; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing; D012666:Semiconductors
chemical_list: D007204:Indium; C473348:gallium nitride; D005708:Gallium; C513701:indium nitride