title: Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect.
abstract: We demonstrate compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm. Cross-wafer measurement of 30 dies shows transmission insertion loss of - 0.028 ± 0.009 dB for the 1550 nm device and - 0.017 ± 0.005 dB for the 1310 nm device. Both crossings show crosstalk lower than - 37 dB. The devices were fabricated in a CMOS-compatible process using 248 nm optical lithography with a single etch step.
authors: Yangjin
authors: Y
authors: Ma
authors: Yi
authors: Y
authors: Zhang
authors: Shuyu
authors: S
authors: Yang
authors: Ari
authors: A
authors: Novack
authors: Ran
authors: R
authors: Ding
authors: Andy Eu-Jin
authors: AE
authors: Lim
authors: Guo-Qiang
authors: GQ
authors: Lo
authors: Tom
authors: T
authors: Baehr-Jones
authors: Michael
authors: M
authors: Hochberg