title: A ternary memory module using low-voltage control over optical properties of metal-polypyridyl monolayers.
abstract: A ternary memory module has been designed as a function of precise voltage command. The monolayer based module displays perpetual stability and non-hysteretic reversibility for multiple scans (10(2)). Ternary-state readout provides a vision to integrate the next generation of "smart electro-optical devices" viable for multi-state memory.
authors: Department of Chemistry, University of Delhi, New Delhi-110 007, India.
authors: Anup
authors: A
authors: Kumar
authors: Megha
authors: M
authors: Chhatwal
authors: Prakash Chandra
authors: PC
authors: Mondal
authors: Vikram
authors: V
authors: Singh
authors: Alok Kumar
authors: AK
authors: Singh
authors: Domenico A
authors: DA
authors: Cristaldi
authors: Rinkoo D
authors: RD
authors: Gupta
authors: Antonino
authors: A
authors: Gulino
mesh_terms: D008670:Metals / Q000737:chemistry*; D055096:Optical Devices; D011108:Polymers / Q000737:chemistry*; D012428:Ruthenium / Q000737:chemistry; D012666:Semiconductors; D012833:Siloxanes / Q000737:chemistry; D017971:Tin Compounds / Q000737:chemistry
chemical_list: D008670:Metals; D011108:Polymers; D012833:Siloxanes; D017971:Tin Compounds; C109984:indium tin oxide; D012428:Ruthenium