title: High-k polymer-graphene oxide dielectrics for low-voltage flexible nonvolatile transistor memory devices.
abstract: Solution-processable nonvolatile transistor memory devices on a flexible ITO-PEN substrate are demonstrated using the charge storage dielectrics of poly(methacrylic acid) and graphene oxide (PMAA-GO) composites. The hydrogen bonding interaction effectively disperses GO sheets in the high-k PMAA matrix, leading to the control on the memory characteristics. Besides, the fabricated transistor memory devices have a low operation voltage, a large threshold voltage shift of 5.3-9.4 V, a long retention ability of up to 10(4) s, and good stress endurance of at least 100 cycles.
authors: Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan. chenwc@ntu.edu.tw.
authors: Ying-Hsuan
authors: YH
authors: Chou
authors: Yu-Cheng
authors: YC
authors: Chiu
authors: Wen-Chang
authors: WC
authors: Chen