title: Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm.
abstract: The wavelength band near 1300 nm is attractive for many telecommunications applications, yet there are few results in silicon that demonstrate high-speed modulation in this band. We present the first silicon modulator to operate at 50 Gbps near 1300 nm. We demonstrate an open eye at this speed using a differential 1.5 V(pp) signal at 0 V reverse bias, achieving an energy efficiency of 450 fJ/bit.
authors: Matthew
authors: M
authors: Streshinsky
authors: Ran
authors: R
authors: Ding
authors: Yang
authors: Y
authors: Liu
authors: Ari
authors: A
authors: Novack
authors: Yisu
authors: Y
authors: Yang
authors: Yangjin
authors: Y
authors: Ma
authors: Xiaoguang
authors: X
authors: Tu
authors: Edward Koh Sing
authors: EK
authors: Chee
authors: Andy Eu-Jin
authors: AE
authors: Lim
authors: Patrick Guo-Qiang
authors: PG
authors: Lo
authors: Tom
authors: T
authors: Baehr-Jones
authors: Michael
authors: M
authors: Hochberg