title: Mobility enhancement by Sb-mediated minimisation of stacking fault density in InAs nanowires grown on silicon.
abstract: We report the growth of InAs(1-x)Sb(x) nanowires (0 ≤ x ≤ 0.15) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs(1-x)Sb(x) nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs0.85Sb0.15 nanowires than InAs nanowires.
authors: London Centre for Nanotechnology, University College London , London WC1H 0AH, United Kingdom.
authors: Marion J L
authors: MJ
authors: Sourribes
authors: Ivan
authors: I
authors: Isakov
authors: Marina
authors: M
authors: Panfilova
authors: Huiyun
authors: H
authors: Liu
authors: Paul A
authors: PA
authors: Warburton