title: Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching.
abstract: Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS: 61.46.Km; 78.55.-m; 78.67.Lt.
authors: IPCF CNR, viale F, Stagno d'Alcontres 37, Faro Superiore, Messina 98158, Italy. irrera@its.me.cnr.it.
authors: Alessia
authors: A
authors: Irrera
authors: Pietro
authors: P
authors: Artoni
authors: Valeria
authors: V
authors: Fioravanti
authors: Giorgia
authors: G
authors: Franzò
authors: Barbara
authors: B
authors: Fazio
authors: Paolo
authors: P
authors: Musumeci
authors: Simona
authors: S
authors: Boninelli
authors: Giuliana
authors: G
authors: Impellizzeri
authors: Antonio
authors: A
authors: Terrasi
authors: Francesco
authors: F
authors: Priolo
authors: Fabio
authors: F
authors: Iacona