title: Direct integration of polycrystalline graphene into light emitting diodes by plasma-assisted metal-catalyst-free synthesis.
abstract: The integration of graphene into devices is a challenging task because the preparation of a graphene-based device usually includes graphene growth on a metal surface at elevated temperatures (∼1000 °C) and a complicated postgrowth transfer process of graphene from the metal catalyst. Here we report a direct integration approach for incorporating polycrystalline graphene into light emitting diodes (LEDs) at low temperature by plasma-assisted metal-catalyst-free synthesis. Thermal degradation of the active layer in LEDs is negligible at our growth temperature, and LEDs could be fabricated without a transfer process. Moreover, in situ ohmic contact formation is observed between DG and p-GaN resulting from carbon diffusion into the p-GaN surface during the growth process. As a result, the contact resistance is reduced and the electrical properties of directly integrated LEDs outperform those of LEDs with transferred graphene electrodes. This relatively simple method of graphene integration will be easily adoptable in the industrialization of graphene-based devices.
authors: Graphene Research Institute, Sejong University , Seoul 143-747, Korea.
authors: Yong Seung
authors: YS
authors: Kim
authors: Kisu
authors: K
authors: Joo
authors: Sahng-Kyoon
authors: SK
authors: Jerng
authors: Jae Hong
authors: JH
authors: Lee
authors: Daeyoung
authors: D
authors: Moon
authors: Jonghak
authors: J
authors: Kim
authors: Euijoon
authors: E
authors: Yoon
authors: Seung-Hyun
authors: SH
authors: Chun