title: Spin transport study in a Rashba spin-orbit coupling system.
abstract: One of the most important topics in spintronics is spin transport. In this work, spin transport properties of two-dimensional electron gas in Al(x)Ga(1-x)N/GaN heterostructure were studied by helicity-dependent photocurrent measurements at room temperature. Spin-related photocurrent was detected under normal incidence of a circularly polarized laser with a Gaussian distribution. On one hand, spin polarized electrons excited by the laser generate a diffusive spin polarization current, which leads to a vortex charge current as a result of anomalous circular photogalvanic effect. On the other hand, photo-induced spin polarized electrons driven by a longitudinal electric field give rise to a transverse current via anomalous Hall Effect. Both of these effects originated from the Rashba spin-orbit coupling. By analyzing spin-related photocurrent varied with laser position, the contributions of the two effects were differentiated and the ratio of the spin diffusion coefficient to photo-induced anomalous spin Hall mobility D(s)/μ(s) = 0.08 V was extracted at room temperature.
authors: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China.
authors: Fuhong
authors: F
authors: Mei
authors: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China.
authors: Shan
authors: S
authors: Zhang
authors: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China.
authors: Ning
authors: N
authors: Tang
authors: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China.
authors: Junxi
authors: J
authors: Duan
authors: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China.
authors: Fujun
authors: F
authors: Xu
authors: Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences(CAS), Beijing 100083, People's Republic of China.
authors: Yonghai
authors: Y
authors: Chen
authors: 1] State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China [2] Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China [3] Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China.
authors: Weikun
authors: W
authors: Ge
authors: 1] State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China [2] Collaborative Innovation Center of Quantum Matter., Beijing 100871, People's Republic of China.
authors: Bo
authors: B
authors: Shen