title: Ag2S-AgInS2: p-n junction heteronanostructures with quasi type-II band alignment.
abstract: We report here the fabrication of a p-n junction diode in a single nanostructure by synthesizing a heterostructure involving n-type AgInS2 and p-type Ag2S. The quasi type-II band alignment between these ternary-binary semiconductors in the p-n junction heterostructures also slows down the carrier recombination rate and the heterostructures show rectification behavior. Hence, they can be used as an active material for fabrication of bulk heterojunction photovoltaic devices without any additional semiconductor material or dye required for charge separation or formation of a p-n junction.
authors: Centre for Advanced Materials and Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India. camnp@iacs.res.in camrb@iacs.res.in.
authors: Riya
authors: R
authors: Bose
authors: Goutam
authors: G
authors: Manna
authors: Santanu
authors: S
authors: Jana
authors: Narayan
authors: N
authors: Pradhan