title: Influence of parallel vs. perpendicular source geometry on cathodic: arc efficiency and film quality for generation of ZnO thin films.
abstract: ZnO films have been grown on Si (111) substrates using a modified PAMBD (pulsed arc molecular beam deposition) reactive cathodic arc source employing either O2, N2, or NH3 as carrier gas. Utilizing new source geometry, a two to three fold improvement in source efficiency has been realized. Scanning electron microscopy analysis confirms that this new source configuration gives a significant reduction in marcoparticle contamination and exhibits good crystalline properties for room temperature deposition. ZnO films were grown with this new source and characterized using X-ray diffraction and X-ray photoelectron spectroscopy.
authors: Department of Chemistry, State University of New York at Buffalo, Amherst, New York 14228, USA.
authors: D M
authors: DM
authors: Eno
authors: Department of Chemistry, State University of New York at Buffalo, Amherst, New York 14228, USA.
authors: R L
authors: RL
authors: DeLeon
authors: Department of Chemistry, State University of New York at Buffalo, Amherst, New York 14228, USA.
authors: J F
authors: JF
authors: Garvey