title: Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process.
abstract: In this work we study, using experiments and theoretical modeling, the mechanical and optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the art complementary metal-oxide-semiconductor fabrication line, using fully qualified materials and methods. We show that these microstructures can be used as active lasing materials in mm-long Fabry-Perot cavities, taking advantage of strain-enhanced direct band gap recombination. The results of our study can be realistically applied to the fabrication of a prototype platform for monolithic integration of near infrared laser sources for silicon photonics.
authors: G
authors: G
authors: Capellini
authors: C
authors: C
authors: Reich
authors: S
authors: S
authors: Guha
authors: Y
authors: Y
authors: Yamamoto
authors: M
authors: M
authors: Lisker
authors: M
authors: M
authors: Virgilio
authors: A
authors: A
authors: Ghrib
authors: M
authors: M
authors: El Kurdi
authors: P
authors: P
authors: Boucaud
authors: B
authors: B
authors: Tillack
authors: T
authors: T
authors: Schroeder