title: A single adiabatic microring-based laser in 220 nm silicon-on-insulator.
abstract: We demonstrate a laser for the silicon photonics platform by hybrid integration with a III/V reflective semiconductor optical amplifier coupled to a 220 nm silicon-on-insulator half-cavity. We utilize a novel ultra-thin silicon edge coupler. A single adiabatic microring based inline reflector is used to select a lasing mode, as compared to the multiple rings and Bragg gratings used in many previous results. Despite the simplified design, the laser was measured to have on-chip 9.8 mW power, less than 220 KHz linewidth, over 45 dB side mode suppression ratio, less than -135 dB/Hz relative intensity noise, and 2.7% wall plug efficiency.
authors: Shuyu
authors: S
authors: Yang
authors: Yi
authors: Y
authors: Zhang
authors: David W
authors: DW
authors: Grund
authors: Garret A
authors: GA
authors: Ejzak
authors: Yang
authors: Y
authors: Liu
authors: Ari
authors: A
authors: Novack
authors: Dennis
authors: D
authors: Prather
authors: Andy Eu-Jin
authors: AE
authors: Lim
authors: Guo-Qiang
authors: GQ
authors: Lo
authors: Tom
authors: T
authors: Baehr-Jones
authors: Michael
authors: M
authors: Hochberg