title: High photoresponsivity in an all-graphene p-n vertical junction photodetector.
abstract: Intensive studies have recently been performed on graphene-based photodetectors, but most of them are based on field effect transistor structures containing mechanically exfoliated graphene, not suitable for practical large-scale device applications. Here we report high-efficient photodetector behaviours of chemical vapor deposition grown all-graphene p-n vertical-type tunnelling diodes. The observed photodetector characteristics well follow what are expected from its band structure and the tunnelling of current through the interlayer between the metallic p- and n-graphene layers. High detectivity (~10(12) cm Hz(1/2) W(-1)) and responsivity (0.4~1.0 A W(-1)) are achieved in the broad spectral range from ultraviolet to near-infrared and the photoresponse is almost consistent under 6-month operations. The high photodetector performance of the graphene p-n vertical diodes can be understood by the high photocurrent gain and the carrier multiplication arising from impact ionization in graphene.
authors: 1] Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea [2].
authors: Chang Oh
authors: CO
authors: Kim
authors: 1] Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea [2].
authors: Sung
authors: S
authors: Kim
authors: Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.
authors: Dong Hee
authors: DH
authors: Shin
authors: Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.
authors: Soo Seok
authors: SS
authors: Kang
authors: Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.
authors: Jong Min
authors: JM
authors: Kim
authors: Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.
authors: Chan Wook
authors: CW
authors: Jang
authors: Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.
authors: Soong Sin
authors: SS
authors: Joo
authors: Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.
authors: Jae Sung
authors: JS
authors: Lee
authors: Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.
authors: Ju Hwan
authors: JH
authors: Kim
authors: Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.
authors: Suk-Ho
authors: SH
authors: Choi
authors: SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea.
authors: Euyheon
authors: E
authors: Hwang