title: Room temperature polariton light emitting diode with integrated tunnel junction.
abstract: We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.
authors: S
authors: S
authors: Brodbeck
authors: J-P
authors: JP
authors: Jahn
authors: A
authors: A
authors: Rahimi-Iman
authors: J
authors: J
authors: Fischer
authors: M
authors: M
authors: Amthor
authors: S
authors: S
authors: Reitzenstein
authors: M
authors: M
authors: Kamp
authors: C
authors: C
authors: Schneider
authors: S
authors: S
authors: Höfling
mesh_terms: D001152:Arsenicals / Q000737:chemistry*; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D045663:Quantum Dots; D012666:Semiconductors; D018511:Systems Integration; D013696:Temperature
chemical_list: D001152:Arsenicals; C043055:gallium arsenide; D005708:Gallium