title: High resolution direct measurement of temperature distribution in silicon nanophotonics devices.
abstract: Following the miniaturization of photonic devices and the increase in data rates, the issues of self heating and heat removal in active nanophotonic devices should be considered and studied in more details. In this paper we use the approach of Scanning Thermal Microscopy (SThM) to obtain an image of the temperature field of a silicon micro ring resonator with sub-micron spatial resolution. The temperature rise in the device is a result of self heating which is caused by free carrier absorption in the doped silicon. The temperature is measured locally and directly using a temperature sensitive AFM probe. We show that this local temperature measurement is feasible in the photonic device despite the perturbation that is introduced by the probe. Using the above method we observed a significant self heating of about 10 degrees within the device.
authors: Mor
authors: M
authors: Tzur
authors: Boris
authors: B
authors: Desiatov
authors: Ilya
authors: I
authors: Goykhman
authors: Meir
authors: M
authors: Grajower
authors: Uriel
authors: U
authors: Levy
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D008422:Materials Testing / Q000295:instrumentation*; D018625:Microscopy, Atomic Force / Q000295:instrumentation*; D053758:Nanoparticles / Q000737:chemistry*; D036103:Nanotechnology / Q000295:instrumentation*; D055096:Optical Devices; D012825:Silicon / Q000737:chemistry*; D013817:Thermography / Q000295:instrumentation*
chemical_list: D012825:Silicon