title: Precision measurement of the photon detection efficiency of silicon photomultipliers using two integrating spheres.
abstract: We report a new and improved photon counting method for the precision PDE measurement of SiPM detectors, utilizing two integrating spheres connected serially and calibrated reference detectors. First, using a ray tracing simulation and irradiance measurement results with a reference photodiode, we investigated irradiance characteristics of the measurement instrument, and analyzed dominating systematic uncertainties in PDE measurement. Two SiPM detectors were then used for PDE measurements between wavelengths of 368 and 850 nm and for bias voltages varying from around 70V. The resulting PDEs of the SiPMs show good agreement with those from other studies, yet with an improved accuracy of 1.57% (1σ). This was achieved by the simultaneous measurement with the NIST calibrated reference detectors, which suppressed the time dependent variation of source light. The technical details of the instrumentation, measurement results and uncertainty analysis are reported together with their implications.
authors: Seul Ki
authors: SK
authors: Yang
authors: J
authors: J
authors: Lee
authors: Sug-Whan
authors: SW
authors: Kim
authors: Hye-Young
authors: HY
authors: Lee
authors: Jin-A
authors: JA
authors: Jeon
authors: I H
authors: IH
authors: Park
authors: Jae-Ryong
authors: JR
authors: Yoon
authors: Yang-Sik
authors: YS
authors: Baek
mesh_terms: D000465:Algorithms; D004867:Equipment Design; D019544:Equipment Failure Analysis; D010783:Photometry / Q000295:instrumentation* / Q000379:methods*; D017785:Photons; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects*
chemical_list: D012825:Silicon