title: Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.
abstract: A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.
authors: Bing-Chen
authors: BC
authors: Lin
authors: Kuo-Ju
authors: KJ
authors: Chen
authors: Chao-Hsun
authors: CH
authors: Wang
authors: Ching-Hsueh
authors: CH
authors: Chiu
authors: Yu-Pin
authors: YP
authors: Lan
authors: Chien-Chung
authors: CC
authors: Lin
authors: Po-Tsung
authors: PT
authors: Lee
authors: Min-Hsiung
authors: MH
authors: Shih
authors: Yen-Kuang
authors: YK
authors: Kuo
authors: Hao-Chung
authors: HC
authors: Kuo
mesh_terms: D017607:Aluminum Compounds / Q000737:chemistry*; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing; D012666:Semiconductors
chemical_list: D017607:Aluminum Compounds; D007204:Indium; C473348:gallium nitride; C052045:aluminum nitride; D005708:Gallium; C513701:indium nitride