title: Individual ZnO nanowires for photodetectors with wide response range from solar-blind ultraviolet to near-infrared modulated by bias voltage and illumination intensity.
abstract: ZnO nanowires have relatively high sensitivity as ultraviolet (UV) photodetectors, while the bandgap of 3.37 eV is an important limitation for their applications in solar-blind UV (SBUV), visible (VIS) and near infrared (NIR) range. Besides UV response, in this study, we demonstrate the promising applications of individual undoped ZnO NWs as high performance SBUV-VIS-NIR broad-spectral-response photodetectors, strongly depended on applied bias voltage and illumination intensity. The dominant mechanism is attributed to the existence of surface states in nanostructured ZnO. At a negative bias voltage electrons can be injected into surface states from electrode, and moreover, under light illumination photogenerated electron-hole pairs can be separated efficiently by surface built-in electric field, resulting into a decrease of potential barrier height and depletion region width, and simultaneously accompanying a filling of oxygen vacancy and a rise of ZnO Fermi level.
authors: Baochang
authors: B
authors: Cheng
authors: Jian
authors: J
authors: Xu
authors: Zhiyong
authors: Z
authors: Ouyang
authors: Cuicui
authors: C
authors: Xie
authors: Xiaohui
authors: X
authors: Su
authors: Yanhe
authors: Y
authors: Xiao
authors: Shuijin
authors: S
authors: Lei
mesh_terms: D004574:Electromagnetic Fields; D004867:Equipment Design; D019544:Equipment Failure Analysis; D007259:Infrared Rays; D053770:Nanowires / Q000737:chemistry* / Q000528:radiation effects*; D010783:Photometry / Q000295:instrumentation*; D011829:Radiation Dosage; D012993:Solar Energy; D014466:Ultraviolet Rays; D015034:Zinc Oxide / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D015034:Zinc Oxide