title: Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.
abstract: We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.
authors: Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8552, Japan. yamada.s.aj@m.titech.ac.jp.
authors: Shigeru
authors: S
authors: Yamada
authors: Yasuyoshi
authors: Y
authors: Kurokawa
authors: Shinsuke
authors: S
authors: Miyajima
authors: Makoto
authors: M
authors: Konagai