title: Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs.
abstract: We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 µm. The transmittance of the TM-polarized light increases with the incident optical power due to the saturation of the s-p(z) intraband absorption in the QDs. Single-mode waveguides with a ridge width of 2 µm and a length of 1.5 mm display 10 dB absorption saturation of the TM-polarized light for an input pulse energy of 8 pJ and 150 fs.
authors: L
authors: L
authors: Monteagudo-Lerma
authors: S
authors: S
authors: Valdueza-Felip
authors: F B
authors: FB
authors: Naranjo
authors: P
authors: P
authors: Corredera
authors: L
authors: L
authors: Rapenne
authors: E
authors: E
authors: Sarigiannidou
authors: G
authors: G
authors: Strasser
authors: E
authors: E
authors: Monroy
authors: M
authors: M
authors: González-Herráez