title: Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region.
abstract: An improved rate equation model for GaN-based LEDs considering the effective volume of the active region is proposed. Through numerical simulations, it is confirmed that the IQE, especially efficiency droop is related with small effective volume. Also, we confirmed that the effective volume is controlled by polarization charge, the barriers between the quantum wells, and current density. We also developed a fast and reliable method for extracting the recombination coefficients and the IQE of the GaN-based LEDs by measuring transient characteristics and considering the effective volume.
authors: Garam
authors: G
authors: Kim
authors: Jang Hyun
authors: JH
authors: Kim
authors: Euy Hwan
authors: EH
authors: Park
authors: Donghoon
authors: D
authors: Kang
authors: Byung-Gook
authors: BG
authors: Park
mesh_terms: D003198:Computer Simulation; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008029:Lighting / Q000295:instrumentation*; D008422:Materials Testing / Q000379:methods; D008956:Models, Chemical; D011789:Quantum Theory; D012666:Semiconductors
chemical_list: C473348:gallium nitride; D005708:Gallium