title: Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates.
abstract: This paper demonstrates that quantum-confined Stark effect (QCSE) within the multiple quantum wells (MQWs) can be suppressed by the growths of InGaN-based light-emitting diodes (LEDs) on the nano-sized patterned c-plane sapphire substrates (PCSSs) with reducing the space. The efficiency droop is also determined by QCSE. As verified by the experimentally measured data and the ray-tracing simulation results, the suppressed efficiency droop for the InGaN-based LED having the nano-sized PCSS with a smaller space of 200 nm can be acquired due to the weaker function of the QCSE within the MQWs as a result of the smaller polarization fields coming from the lower compressive strain in the corresponding epitaxial layers.
authors: Vin-Cent
authors: VC
authors: Su
authors: Po-Hsun
authors: PH
authors: Chen
authors: Ray-Ming
authors: RM
authors: Lin
authors: Ming-Lun
authors: ML
authors: Lee
authors: Yao-Hong
authors: YH
authors: You
authors: Chung-I
authors: CI
authors: Ho
authors: Yi-Chi
authors: YC
authors: Chen
authors: Wei-Fan
authors: WF
authors: Chen
authors: Chieh-Hsiung
authors: CH
authors: Kuan