title: Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping.
abstract: We report on gallium (Ga) doped cubic MgZnO films, which have been grown by metal organic chemical vapor deposition. It was demonstrated that Ga doping improves the n-type conduction of the cubic MgZnO films. A two-orders of magnitude enhancement in lateral n-type conduction have been achieved for the cubic MgZnO films. The responsivity of the cubic MgZnO-based photodetector has been also enhanced. Depletion region electric field intensity enhanced model was adopted to explain the improvement of quantum efficiency in Ga doped MgZnO-based detectors.
authors: Xiuhua
authors: X
authors: Xie
authors: Zhenzhong
authors: Z
authors: Zhang
authors: Binghui
authors: B
authors: Li
authors: Shuangpeng
authors: S
authors: Wang
authors: Mingming
authors: M
authors: Jiang
authors: Chongxin
authors: C
authors: Shan
authors: Dongxu
authors: D
authors: Zhao
authors: Hongyu
authors: H
authors: Chen
authors: Dezhen
authors: D
authors: Shen
mesh_terms: D004867:Equipment Design; D019544:Equipment Failure Analysis; D005708:Gallium / Q000737:chemistry*; D008027:Light; D008277:Magnesium Oxide / Q000737:chemistry* / Q000528:radiation effects; D008422:Materials Testing; D008567:Membranes, Artificial; D010783:Photometry / Q000295:instrumentation*; D011829:Radiation Dosage; D012666:Semiconductors; D012993:Solar Energy; D015034:Zinc Oxide / Q000737:chemistry* / Q000528:radiation effects
chemical_list: D008567:Membranes, Artificial; D008277:Magnesium Oxide; D005708:Gallium; D015034:Zinc Oxide