title: Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using hydrogen peroxide.
abstract: We have investigated the effect of hydrogen peroxide (H2O2) on negative bias stress (NBS) stability of solution-processed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The instability of solution-processed a-IGZO TFTs under NBS is attributed to intrinsic oxygen vacancy defects (Vo) and organic chemical-induced defects, such as pores, pin holes, and organic residues. In this respect, we added H2O2 into an indium-gallium-zinc oxide solution to reduce the defects without any degradation of electrical performance. The field-effect mobility and sub-threshold slope of the a-IGZO TFTs were improved from 0.37 cm(2) V(-1) s(-1) and 0.86 V/dec to 0.97 cm(2) V(-1) s(-1) and 0.58 V/dec, respectively. Furthermore, the threshold voltage shift under NBS was dramatically decreased from -3.73 to -0.18 V. These results suggest that H2O2 effectively reduces Vo through strong oxidation and minimizes organic chemical-induced defects by eliminating the organic chemicals at lower temperatures compared to a conventional solution process.
authors: School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
authors: Jeong Moo
authors: JM
authors: Kwon
authors: Joohye
authors: J
authors: Jung
authors: You Seung
authors: YS
authors: Rim
authors: Dong Lim
authors: DL
authors: Kim
authors: Hyun Jae
authors: HJ
authors: Kim