title: Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells.
abstract: We report a time-resolved photoluminescence study for GaInNAs and GaNAsSb p-i-n bulk solar cells grown on GaAs(100). In particular, we studied the extent to which the carrier lifetime decreases with the increase of N content. Rapid thermal annealing proved to significantly increase the decay times by a factor of 10 to 12 times, for both GaInNAs and GaNAsSb heterostructures, while for the 1-eV bandgap GaNAsSb structure, grown at the same growth conditions as the GaInNAs, the photoluminescence decay time remained slightly below 100 ps after annealing; the approximately 1.15-eV GaInNAs p-i-n solar cell exhibited a lifetime as long as 900 ps.
  78.47.D; 78.55.Cr; 88.40.hj.
authors.affiliation: Optoelectronics Research Centre, Tampere University of Technology, P,O, Box 692, Tampere FIN-33101, Finland. alexander.gubanov@tut.fi.
authors.forename: Alexander
authors.initials: A
authors.lastname: Gubanov
authors.forename: Ville
authors.initials: V
authors.lastname: Polojärvi
authors.forename: Arto
authors.initials: A
authors.lastname: Aho
authors.forename: Antti
authors.initials: A
authors.lastname: Tukiainen
authors.forename: Nikolai V
authors.initials: NV
authors.lastname: Tkachenko
authors.forename: Mircea
authors.initials: M
authors.lastname: Guina