title: Determination of polarization-fields across polytype interfaces in InAs nanopillars.
abstract: Polarization fields within InAs nanopillars with zincblende(ZB)/wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.
authors.affiliation: Center for Nanoscale Characterization and Devices, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China; Department of Physics, Arizona State University, Tempe, Arizona, 85287-1504, USA.
authors.forename: Luying
authors.initials: L
authors.lastname: Li
authors.forename: Zhaofeng
authors.initials: Z
authors.lastname: Gan
authors.forename: Martha R
authors.initials: MR
authors.lastname: McCartney
authors.forename: Hanshuang
authors.initials: H
authors.lastname: Liang
authors.forename: Hongbin
authors.initials: H
authors.lastname: Yu
authors.forename: Wan-Jian
authors.initials: WJ
authors.lastname: Yin
authors.forename: Yanfa
authors.initials: Y
authors.lastname: Yan
authors.forename: Yihua
authors.initials: Y
authors.lastname: Gao
authors.forename: Jianbo
authors.initials: J
authors.lastname: Wang
authors.forename: David J
authors.initials: DJ
authors.lastname: Smith
keywords: InAs; nanopillars; off-axis electron holography; polytype heterocrystalline structures; probe-corrected HAADF imaging; spontaneous polarization