title: Recrystallized arrays of bismuth nanowires with trigonal orientation.
abstract: We demonstrate methods to improve the crystalline-quality of free-standing Bi nanowires arrays on a Si substrate and enhance the preferred trigonal orientation for thermoelectric performance by annealing the arrays above the 271.4 °C Bi melting point. The nanowires maintain their geometry during melting due to the formation of a thin Bi-oxide protective shell that contains the molten Bi. Recrystallizing nanowires from the melt improves crystallinity; those cooled rapidly demonstrate a strong trigonal orientation preference.
authors.affiliation: Sandia National Laboratories, Albuquerque, New Mexico 87123, United States.
authors.forename: Steven J
authors.initials: SJ
authors.lastname: Limmer
authors.forename: W Graham
authors.initials: WG
authors.lastname: Yelton
authors.forename: Kristopher J
authors.initials: KJ
authors.lastname: Erickson
authors.forename: Douglas L
authors.initials: DL
authors.lastname: Medlin
authors.forename: Michael P
authors.initials: MP
authors.lastname: Siegal