title: Angular dependence of the magnetoresistance effect in a silicon based p-n junction device.
abstract: We report a pronounced angular dependence of the magnetoresistance (MR) effect in a silicon based p-n junction device at room temperature by manipulating the space charge region of the p-n junction under a magnetic field. For the p-n junction device with various space charge region configurations, we find that all the angular dependence of the MR effect is proportional to sin(2)(θ), where the θ is the angle between the magnetic field and the driving current. With increasing the magnetic field and driving current, the anisotropic MR effect is obviously improved. At room temperature, under a magnetic field 2 T and driving current 20 mA, the MR ratio is about 50%, almost one order of amplitude larger than that in the magnetic material permalloy. Our results reveal an interpretation of the MR effect in the non-magnetic p-n junction in terms of the Lorentz force and give a new way for the development of future magnetic sensors with non-magnetic p-n junctions.
authors.affiliation: The Key Laboratory for Magnetism and Magnetic materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China. yangdzh@lzu.edu.cn xueds@lzu.edu.cn.
authors.forename: Tao
authors.initials: T
authors.lastname: Wang
authors.forename: Mingsu
authors.initials: M
authors.lastname: Si
authors.forename: Dezheng
authors.initials: D
authors.lastname: Yang
authors.forename: Zhong
authors.initials: Z
authors.lastname: Shi
authors.forename: Fangcong
authors.initials: F
authors.lastname: Wang
authors.forename: Zhaolong
authors.initials: Z
authors.lastname: Yang
authors.forename: Shiming
authors.initials: S
authors.lastname: Zhou
authors.forename: Desheng
authors.initials: D
authors.lastname: Xue