title: [Structure and luminescence properties of Ga2O3 : Cr3+ by Al doping].
abstract: The Al doping gallate phosphor (Ga(1-x)Al(x))2O3 : Cr3+ (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) was synthesized by a high temperature solid-state reaction method. The X-ray diffractions show that the phase of the phosphors remains to be Ga2 O3 structure with increase in the contents of Al3+ ion. Beside, the fact that the X-ray diffraction peak shifts towards big angles with increasing Al3+ ions content shows that Al3+ ions entered the Ga2 O3 lattice. The peaks of the excitation spectra located at 258, 300, 410 and 550 nm are attributed to the band to band transition of the matrix, charge transfer band transition, and 4A2 --> 4T1 and 4A2 --> 4T2 transition of Cr3+ ions, respectively. Those excitation spectrum peak positions show different degrees of blue shift with the increase in the Al3+ ions content. The blue shift of the first two peaks are due to the band gap energy of substrate and the electronegativity between Cr3+ ions and ligands increasing, respectively. The blue shift of the energy level transition of Cr3+ ion is attributed to crystal field strength increasing. The Cr3+ ion luminescence changes from a broadband emission to a narrow-band emission with Al3+ doping, because the emission of Cr3+ ion changed from 4 T2 --> 4A2 to 2E --> 4A2 transition with the crystal field change after Al3+ ions doping. The Al3+ ions doping improved the long afterglow luminescence properties of samples, and the sample showed a longer visible near infrared when Al3+ ions content reaches 0.5. The thermoluminescence curve shows the sample with suitable trap energy level, and this is also the cause of the long afterglow luminescence materials.
authors.affiliation: School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China. xshengwang@126.com
authors.forename: Xian-Sheng
authors.initials: XS
authors.lastname: Wang
authors.affiliation: School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
authors.forename: Min-Hua
authors.initials: MH
authors.lastname: Wan
authors.affiliation: School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
authors.forename: Yin-Hai
authors.initials: YH
authors.lastname: Wang
authors.affiliation: School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Zhao
authors.affiliation: School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
authors.forename: Zheng-Fa
authors.initials: ZF
authors.lastname: Hu
authors.affiliation: School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
authors.forename: Hai-Ling
authors.initials: HL
authors.lastname: Li