title: Four-port integrated polarizing beam splitter.
abstract: In this Letter, we report on the first integrated four-port polarizing beam splitter. The device operates on the principle of mode evolution and was implemented in a silicon-on-insulator silicon photonics platform and fabricated on a 300 mm CMOS line using 193 nm optical immersion lithography. The adiabatic transition forming of the structure enabled over a 150 nm bandwidth from λ~1350 to λ~1500  nm, achieving a cross-talk level below -10  dB over the entire band.
authors.forename: Zhan
authors.initials: Z
authors.lastname: Su
authors.forename: Erman
authors.initials: E
authors.lastname: Timurdogan
authors.forename: Ehsan Shah
authors.initials: ES
authors.lastname: Hosseini
authors.forename: Jie
authors.initials: J
authors.lastname: Sun
authors.forename: Gerald
authors.initials: G
authors.lastname: Leake
authors.forename: Douglas D
authors.initials: DD
authors.lastname: Coolbaugh
authors.forename: Michael R
authors.initials: MR
authors.lastname: Watts