title: Thermal doping by vacancy formation in copper sulfide nanocrystal arrays.
abstract: A new approach for doping of Cu2S nanocrystal arrays using thermal treatment at moderate temperatures (T < 400 K) is presented. This thermal doping process yields conductance enhancement by 6 orders of magnitude. Local probe measurements prove this doping is an intraparticle effect and, moreover, tunneling spectroscopy data signify p-type doping. The doping mechanism is attributed to Cu vacancy formation, resulting in free holes. Thermal-doping temperature dependence exhibits an Arrhenius-like behavior, providing the vacancy formation energy of 1.6 eV. The moderate temperature conditions for thermal doping unique to these nanocrystals allow patterned doping of nanocrystal films through local heating by a focused laser beam, toward fabrication of nanocrystal-based electronic devices.
authors.affiliation: Institute of Chemistry, ‡Racah Institute of Physics, and §Center for Nanoscience and Nanotechnology, the Hebrew University of Jerusalem , Jerusalem 91904, Israel.
authors.forename: Y
authors.initials: Y
authors.lastname: Bekenstein
authors.forename: K
authors.initials: K
authors.lastname: Vinokurov
authors.forename: S
authors.initials: S
authors.lastname: Keren-Zur
authors.forename: I
authors.initials: I
authors.lastname: Hadar
authors.forename: Y
authors.initials: Y
authors.lastname: Schilt
authors.forename: U
authors.initials: U
authors.lastname: Raviv
authors.forename: O
authors.initials: O
authors.lastname: Millo
authors.forename: U
authors.initials: U
authors.lastname: Banin