title: Power-dependent Raman analysis of highly strained Si nanobridges.
abstract: Strain analysis of complex three-dimensional nanobridges conducted via Raman spectroscopy requires careful experimentation and data analysis supported by simulations. A method combining micro-Raman spectroscopy with finite element analysis is presented, enabling a detailed understanding of strain-sensitive Raman data measured on Si nanobridges. Power-dependent measurements are required to account for the a priori unknown scattering efficiency related to size and geometry. The experimental data is used to assess the validity of previously published phonon deformation potentials.
authors.affiliation: Laboratory for Nanometallurgy (LNM), Department of Materials Science, ETH Zurich , CH-8093 Zürich, Switzerland.
authors.forename: M J
authors.initials: MJ
authors.lastname: Süess
authors.forename: R A
authors.initials: RA
authors.lastname: Minamisawa
authors.forename: R
authors.initials: R
authors.lastname: Geiger
authors.forename: K K
authors.initials: KK
authors.lastname: Bourdelle
authors.forename: H
authors.initials: H
authors.lastname: Sigg
authors.forename: R
authors.initials: R
authors.lastname: Spolenak