title: Graphene versus ohmic metal as source-drain electrode for MoS₂ nanosheet transistor channel.
authors.affiliation: Department of Physics and Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul, 120-749, Korea.
authors.forename: Young Tack
authors.initials: YT
authors.lastname: Lee
authors.forename: Kyunghee
authors.initials: K
authors.lastname: Choi
authors.forename: Hee Sung
authors.initials: HS
authors.lastname: Lee
authors.forename: Sung-Wook
authors.initials: SW
authors.lastname: Min
authors.forename: Pyo Jin
authors.initials: PJ
authors.lastname: Jeon
authors.forename: Do Kyung
authors.initials: DK
authors.lastname: Hwang
authors.forename: Hyoung Joon
authors.initials: HJ
authors.lastname: Choi
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
keywords: FETs; MoS2; graphene; nanosheet; source/drain contact