title: Silicon-based silicon-germanium-tin heterostructure photonics.
abstract: The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components.
authors.affiliation: Department of Physics and the Engineering Program, The University of Massachusetts at Boston, , 100 Morrissey Boulevard, Boston, MA 02125, USA.
authors.forename: Richard
authors.initials: R
authors.lastname: Soref
keywords: communications; germanium; integrated photonics; mid-infrared devices; opto-electronics; silicon