title: Probing the spin states of a single acceptor atom.
abstract: We demonstrate a single-hole transistor using an individual acceptor dopant embedded in a silicon channel. Magneto-transport spectroscopy reveals that the ground state splits as a function of magnetic field into four states, which is unique for a single hole bound to an acceptor in a bulk semiconductor. The two lowest spin states are heavy (|m(j)| = 3/2) and light (|m(j)| = 1/2) hole-like, a two-level system that can be electrically driven and is characterized by a magnetic field dependent and long relaxation time, which are properties of interest for qubits. Although the bulklike spin splitting of a boron atom is preserved in our nanotransistor, the measured Landé g-factors, |g(hh)| = 0.81 ± 0.06 and |g(lh)| = 0.85 ± 0.21 for heavy and light holes respectively, are lower than the bulk value.
authors.affiliation: Centre for Quantum Computation and Communication Technology and ‡School of Physics, University of New South Wales , Sydney NSW 2052, Australia.
authors.forename: Joost
authors.initials: J
authors.lastname: van der Heijden
authors.forename: Joe
authors.initials: J
authors.lastname: Salfi
authors.forename: Jan A
authors.initials: JA
authors.lastname: Mol
authors.forename: Jan
authors.initials: J
authors.lastname: Verduijn
authors.forename: Giuseppe C
authors.initials: GC
authors.lastname: Tettamanzi
authors.forename: Alex R
authors.initials: AR
authors.lastname: Hamilton
authors.forename: Nadine
authors.initials: N
authors.lastname: Collaert
authors.forename: Sven
authors.initials: S
authors.lastname: Rogge