title: The modulation of grain boundary barrier in ZnMgO/ZnO heterostructure by surface polar liquid.
abstract: Modulation of grain boundary barrier in ZnO layer by polar liquid, was investigated in ZnMgO/ZnO heterostructures grown by plasma-assisted molecular beam epitaxy. Traditionally, surface adsorbates can only affect the surface atoms or surface electronic states. However, it was found that the electronic conduction property of ZnO far from the surface could be tailored obviously by the polar liquid adsorbed on the ZnMgO surface. Physically, this phenomenon is supposed to be caused by the electrostatical couple between the liquid polarity and the grain boundary barrier in the ZnO layer through crystal polarization field.
authors.affiliation: State key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China.
authors.forename: Xu
authors.initials: X
authors.lastname: Ji
authors.affiliation: State key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Zhu
authors.affiliation: State key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China.
authors.forename: Mingming
authors.initials: M
authors.lastname: Chen
authors.affiliation: State key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China.
authors.forename: Longxing
authors.initials: L
authors.lastname: Su
authors.affiliation: State key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China.
authors.forename: Anqi
authors.initials: A
authors.lastname: Chen
authors.affiliation: State key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China.
authors.forename: Xuchun
authors.initials: X
authors.lastname: Gui
authors.affiliation: State key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China.
authors.forename: Rong
authors.initials: R
authors.lastname: Xiang
authors.affiliation: 1] State key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China [2] Physics Department, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
authors.forename: Zikang
authors.initials: Z
authors.lastname: Tang