title: Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy.
abstract: Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film.
authors.forename: Shun-Tsung
authors.initials: ST
authors.lastname: Lo
authors.forename: Chiashain
authors.initials: C
authors.lastname: Chuang
authors.affiliation: Department of Physics, National Taiwan University, No, 1, Sec, 4, Roosevelt Rd, Taipei 106, Taiwan. sdlin@mail.nctu.edu.tw.
authors.forename: Sheng-Di
authors.initials: SD
authors.lastname: Lin
authors.forename: Kuang Yao
authors.initials: KY
authors.lastname: Chen
authors.forename: Chi-Te
authors.initials: CT
authors.lastname: Liang
authors.forename: Shih-Wei
authors.initials: SW
authors.lastname: Lin
authors.forename: Jau-Yang
authors.initials: JY
authors.lastname: Wu
authors.forename: Mao-Rong
authors.initials: MR
authors.lastname: Yeh