title: Three-terminal nanoelectromechanical field effect transistor with abrupt subthreshold slope.
abstract: We report the first experimental demonstration of a three-terminal nanoelectromechanical field effect transistor (NEMFET) with measurable subthreshold slope as small as 6 mV/dec at room temperature and a switching voltage window of under 2 V. The device operates by modulating drain current through a suspended nanowire channel via an insulated gate electrode, thus eliminating the need for a conducting moving electrode, and yields devices that reliably switch on/off for up to 130 cycles. Radio-frequency measurements have confirmed operation at 125 MHz. Our measurements and simulations suggest that the NEMFET design is scalable toward sub-1 V ultrahigh-frequency operation for future low-power computing systems.
authors.affiliation: Department of Electrical and Computer Engineering and ‡Materials Science and Engineering Program, University of California, San Diego , 9500 Gilman Dr., La Jolla, California 92093-0407, United States.
authors.forename: Ji-Hun
authors.initials: JH
authors.lastname: Kim
authors.forename: Zack C Y
authors.initials: ZC
authors.lastname: Chen
authors.forename: Soonshin
authors.initials: S
authors.lastname: Kwon
authors.forename: Jie
authors.initials: J
authors.lastname: Xiang