title: Raman spectroscopy studies of dopant activation and free electron density of In(0.53)Ga(0.47)As via sulfur monolayer doping.
abstract: We present a Raman spectroscopy study of electron-phonon coupling in In0.53Ga0.47As epilayers doped via the sulfur-monolayer doping method. A high-frequency coupled mode (HFCM) detected above 400 cm(-1) shifts with increasing charge carrier density and allows for extraction of the activated dopant concentrations.
authors.affiliation: Department of Chemistry and the New York State Center of Excellence in Materials Informatics, University at Buffalo, The State University of New York, Buffalo, NY 14260-3000, USA. sb244@buffalo.edu.
authors.forename: Kenneth R
authors.initials: KR
authors.lastname: Kort
authors.forename: P Y
authors.initials: PY
authors.lastname: Hung
authors.forename: Patrick D
authors.initials: PD
authors.lastname: Lysaght
authors.forename: Wei-Yip
authors.initials: WY
authors.lastname: Loh
authors.forename: Gennadi
authors.initials: G
authors.lastname: Bersuker
authors.forename: Sarbajit
authors.initials: S
authors.lastname: Banerjee