title: Nanowire systems: technology and design.
abstract: Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this study, we consider double independent gate, vertically stacked nanowire field effect transistors (FETs) with gate-all-around structures and typical diameter of 20 nm. These devices, which we have successfully fabricated and evaluated, control the ambipolar behaviour of the nanostructure by selectively enabling one type of carriers. These transistors work as switches with electrically programmable polarity and thus realize an exclusive or operation. The intrinsic higher expressive power of these FETs, when compared with standard complementary metal oxide semiconductor technology, enables us to realize more efficient logic gates, which we organize as tiles to realize nanowire systems by regular arrays. This article surveys both the technology for double independent gate FETs as well as physical and logic design tools to realize digital systems with this fabrication technology.
authors.affiliation: EPFL, Lausanne, Switzerland.
authors.forename: Pierre-Emmanuel
authors.initials: PE
authors.lastname: Gaillardon
authors.forename: Luca Gaetano
authors.initials: LG
authors.lastname: Amarù
authors.forename: Shashikanth
authors.initials: S
authors.lastname: Bobba
authors.forename: Michele
authors.initials: M
authors.lastname: De Marchi
authors.forename: Davide
authors.initials: D
authors.lastname: Sacchetto
authors.forename: Giovanni
authors.initials: G
authors.lastname: De Micheli
keywords: controllable polarity; logic synthesis; nanoelectronics; nanosystems; nanowire transistors; regular arrays