title: Ion sources for ion implantation technology (invited).
abstract: Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.
authors.affiliation: Nissin Ion Equipment co., ltd, 575 Kuze-Tonoshiro-cho Minami-ku, Kyoto 601-8205, Japan.
authors.forename: Shigeki
authors.initials: S
authors.lastname: Sakai
authors.affiliation: Nissin Ion Equipment co., ltd, 575 Kuze-Tonoshiro-cho Minami-ku, Kyoto 601-8205, Japan.
authors.forename: Nariaki
authors.initials: N
authors.lastname: Hamamoto
authors.affiliation: Nissin Ion Equipment co., ltd, 575 Kuze-Tonoshiro-cho Minami-ku, Kyoto 601-8205, Japan.
authors.forename: Yutaka
authors.initials: Y
authors.lastname: Inouchi
authors.affiliation: Nissin Ion Equipment co., ltd, 575 Kuze-Tonoshiro-cho Minami-ku, Kyoto 601-8205, Japan.
authors.forename: Sei
authors.initials: S
authors.lastname: Umisedo
authors.affiliation: Nissin Ion Equipment co., ltd, 575 Kuze-Tonoshiro-cho Minami-ku, Kyoto 601-8205, Japan.
authors.forename: Naoki
authors.initials: N
authors.lastname: Miyamoto