title: Direct solvothermal synthesis of B/N-doped graphene.
abstract: Heteroatom-doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron-doping into the graphitic framework is extremely limited, whereas nitrogen-doping is relatively feasible. Herein, boron/nitrogen co-doped graphene (BCN-graphene) is directly synthesized from the reaction of CCl4 , BBr3 , and N2 in the presence of potassium. The resultant BCN-graphene has boron and nitrogen contents of 2.38 and 2.66 atom %, respectively, and displays good dispersion stability in N-methyl-2-pyrrolidone, allowing for solution casting fabrication of a field-effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3 eV. Considering the scalability of the production method and the benefits of solution processability, BCN-graphene has high potential for many practical applications.
authors.affiliation: Interdisciplinary School of Green Energy/Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798 (South Korea) http://jbbaek.unist.ac.kr.
authors.forename: Sun-Min
authors.initials: SM
authors.lastname: Jung
authors.forename: Eun Kwang
authors.initials: EK
authors.lastname: Lee
authors.forename: Min
authors.initials: M
authors.lastname: Choi
authors.forename: Dongbin
authors.initials: D
authors.lastname: Shin
authors.forename: In-Yup
authors.initials: IY
authors.lastname: Jeon
authors.forename: Jeong-Min
authors.initials: JM
authors.lastname: Seo
authors.forename: Hu Young
authors.initials: HY
authors.lastname: Jeong
authors.forename: Noejung
authors.initials: N
authors.lastname: Park
authors.forename: Joon Hak
authors.initials: JH
authors.lastname: Oh
authors.forename: Jong-Beom
authors.initials: JB
authors.lastname: Baek
keywords: boron; doping; field effect transistors; graphene; nitrogen