title: Extended defects formation in nanosecond laser-annealed ion implanted silicon.
abstract: Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron and silicon implanted silicon samples, the most stable form among the observed defects is that of dislocation loops lying close to (001) and with Burgers vector parallel to the [001] direction, instead of conventional {111} dislocation loops or {311} rod-like defects, which are known to be more energetically favorable and are typically observed in ion implanted silicon. The observed results are explained in terms of a possible modification of the defect formation energy induced by the compressive stress developed in the nonmelted regions during laser annealing.
authors.affiliation: LAAS, CNRS and Université de Toulouse , 7 av. Du Col. Roche, 31400 Toulouse, France.
authors.forename: Yang
authors.initials: Y
authors.lastname: Qiu
authors.forename: Fuccio
authors.initials: F
authors.lastname: Cristiano
authors.forename: Karim
authors.initials: K
authors.lastname: Huet
authors.forename: Fulvio
authors.initials: F
authors.lastname: Mazzamuto
authors.forename: Giuseppe
authors.initials: G
authors.lastname: Fisicaro
authors.forename: Antonino
authors.initials: A
authors.lastname: La Magna
authors.forename: Maurice
authors.initials: M
authors.lastname: Quillec
authors.forename: Nikolay
authors.initials: N
authors.lastname: Cherkashin
authors.forename: Huiyuan
authors.initials: H
authors.lastname: Wang
authors.forename: Sébastien
authors.initials: S
authors.lastname: Duguay
authors.forename: Didier
authors.initials: D
authors.lastname: Blavette