title: High-frequency acoustic charge transport in GaAs nanowires.
abstract: The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charge carriers in semiconductor heterostructures. Here, we demonstrate high-frequency (above 1 GHz) acoustic charge transport in GaAs-based nanowires deposited on a piezoelectric substrate. The short wavelength of the acoustic modulation, smaller than the length of the nanowire, allows the trapping of photo-generated electrons and holes at the spatially separated energy minima and maxima of conduction and valence bands, respectively, and their transport along the nanowire with a well defined acoustic velocity towards indium-doped recombination centers.
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.
authors.forename: S
authors.initials: S
authors.lastname: Büyükköse
authors.forename: A
authors.initials: A
authors.lastname: Hernández-Mínguez
authors.forename: B
authors.initials: B
authors.lastname: Vratzov
authors.forename: C
authors.initials: C
authors.lastname: Somaschini
authors.forename: L
authors.initials: L
authors.lastname: Geelhaar
authors.forename: H
authors.initials: H
authors.lastname: Riechert
authors.forename: W G
authors.initials: WG
authors.lastname: van der Wiel
authors.forename: P V
authors.initials: PV
authors.lastname: Santos