title: Room temperature magnetic graphene oxide-iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons.
authors.affiliation: NUS Graduate School of Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore, 117456; Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore, 117542.
authors.forename: Aigu L
authors.initials: AL
authors.lastname: Lin
authors.forename: Haiyang
authors.initials: H
authors.lastname: Peng
authors.forename: Zhiqi
authors.initials: Z
authors.lastname: Liu
authors.forename: Tom
authors.initials: T
authors.lastname: Wu
authors.forename: Chenliang
authors.initials: C
authors.lastname: Su
authors.forename: Kian Ping
authors.initials: KP
authors.lastname: Loh
authors.lastname: Ariando
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.forename: Andrew T S
authors.initials: AT
authors.lastname: Wee
keywords: MRAM; highly disordered system; magnetic graphene oxides; organic spintronics; variable range hopping