title: Palladium-silver-activated ZnO surface: highly selective methane sensor at reasonably low operating temperature.
abstract: Metal oxide semiconductors (MOS) are well known as reducing gas sensors. However, their selectivity and operating temperature have major limitations. Most of them show cross sensitivity and the operating temperatures are also relatively higher than the value reported here. To resolve these problems, here, we report the use of palladium-silver (70-30%) activated ZnO thin films as a highly selective methane sensor at low operating temperature (∼100 °C). Porous ZnO thin films were deposited on fluorine-doped tin oxide (FTO)-coated glass substrates by galvanic technique. X-ray diffraction showed polycrystalline nature of the films, whereas the morphological analyses (field emission scanning electron microscopy) showed flake like growth of the grains mainly on xy plane with high surface roughness (107 nm). Pd-Ag (70-30%) alloy was deposited on such ZnO films by e-beam evaporation technique with three different patterns, namely, random dots, ultrathin (∼1 nm) layer and thin (∼5 nm) layer as the activation layer. ZnO films with Pd-Ag dotted pattern were found show high selectivity towards methane (with respect to H2S and CO) and sensitivity (∼80%) at a comparatively low operating temperature of about 100°C. This type of sensor was found to have higher methane selectivity in comparison to other commercially available reducing gas sensor.
authors.affiliation: Centre of Excellence for Green Energy and Sensor Systems, Bengal Engineering and Science University , Howrah 711103, West Bengal, India.
authors.forename: Sugato
authors.initials: S
authors.lastname: Ghosh
authors.forename: Chirasree
authors.initials: C
authors.lastname: Roychaudhuri
authors.forename: Raghunath
authors.initials: R
authors.lastname: Bhattacharya
authors.forename: Hiranmay
authors.initials: H
authors.lastname: Saha
authors.forename: Nillohit
authors.initials: N
authors.lastname: Mukherjee