title: Black phosphorus field-effect transistors.
abstract: Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Likai
authors.initials: L
authors.lastname: Li
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Yijun
authors.identifier: 0000000240068072
authors.initials: Y
authors.lastname: Yu
authors.affiliation: Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Guo Jun
authors.initials: GJ
authors.lastname: Ye
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Qingqin
authors.initials: Q
authors.lastname: Ge
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Xuedong
authors.initials: X
authors.lastname: Ou
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Hua
authors.initials: H
authors.lastname: Wu
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Donglai
authors.initials: D
authors.lastname: Feng
authors.affiliation: Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
authors.forename: Xian Hui
authors.initials: XH
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Yuanbo
authors.initials: Y
authors.lastname: Zhang