title: Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.
abstract: The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.
authors.affiliation: Department of Electronics and Communication Engineering, Heritage Institute of Technology, Chowbaga Road, Anandapur, Kolkata 700107, India.
authors.forename: D P
authors.initials: DP
authors.lastname: Samajdar
authors.affiliation: Department of Electronic Science, University of Calcutta, 92, A. P. C. Road, Kolkata 700009, India.
authors.forename: S
authors.initials: S
authors.lastname: Dhar
mesh_terms: D000497:Alloys / Q000737:chemistry*; D008956:Models, Chemical; D012666:Semiconductors
chemical_list: D000497:Alloys