title: A general route towards defect and pore engineering in graphene.
abstract: Defect engineering in graphene is important for tailoring graphene's properties thus applicable in various applications such as porous membranes and ultra-capacitors. In this paper, we report a general route towards defect- and pore- engineering in graphene through remote plasma treatments. Oxygen plasma irradiation was employed to create homogenous defects in graphene with controllable density from a few to ≈10(3) (μm(-2)). The created defects can be further enlarged into nanopores by hydrogen plasma anisotropic etching with well-defined pore size of a few nm or above. The achieved smallest nanopores are ≈2 nm in size, showing the potential for ultra-small graphene nanopores fabrication.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Guibai
authors.initials: G
authors.lastname: Xie
authors.forename: Rong
authors.initials: R
authors.lastname: Yang
authors.forename: Peng
authors.initials: P
authors.lastname: Chen
authors.forename: Jing
authors.initials: J
authors.lastname: Zhang
authors.forename: Xuezeng
authors.initials: X
authors.lastname: Tian
authors.forename: Shuang
authors.initials: S
authors.lastname: Wu
authors.forename: Jing
authors.initials: J
authors.lastname: Zhao
authors.forename: Meng
authors.initials: M
authors.lastname: Cheng
authors.forename: Wei
authors.initials: W
authors.lastname: Yang
authors.forename: Duoming
authors.initials: D
authors.lastname: Wang
authors.forename: Congli
authors.initials: C
authors.lastname: He
authors.forename: Xuedong
authors.initials: X
authors.lastname: Bai
authors.forename: Dongxia
authors.initials: D
authors.lastname: Shi
authors.forename: Guangyu
authors.initials: G
authors.lastname: Zhang
keywords: Raman spectroscopy; defects; graphene; nanopores; plasma etching