title: Boron nitride film as a buffer layer in deposition of dielectrics on graphene.
abstract: As a two-dimensional material, graphene is highly susceptible to environmental influences. It is therefore challenging to deposit dielectrics on graphene without affecting its electronic properties. It is demonstrated that the effect of the dielectric deposition on graphene can be reduced by using a multilayer hexagonal boron nitride film as a buffer layer. Particularly, the boron nitride layer provides significant protection in magnetron sputtering deposition. It also enables growth of uniform and charge trapping free high-k dielectrics by atomic layer deposition. The doping effect of various deposition methods on graphene has been discussed.
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing, 100871, China; Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Han
authors.forename: Baoming
authors.initials: B
authors.lastname: Yan
authors.forename: Teng
authors.initials: T
authors.lastname: Gao
authors.forename: Jie
authors.initials: J
authors.lastname: Meng
authors.forename: Yanfeng
authors.initials: Y
authors.lastname: Zhang
authors.forename: Zhongfan
authors.initials: Z
authors.lastname: Liu
authors.forename: Xiaosong
authors.initials: X
authors.lastname: Wu
authors.forename: Dapeng
authors.initials: D
authors.lastname: Yu
keywords: boron nitride; buffer layer; damage; dielectrics; graphene