title: Mechanisms of silicon sputtering and cluster formation explained by atomic level simulations.
abstract: In low-energy secondary ion MS, collision cascades result in rare sputter events or unfavourably low sputter yields. To better identify the origin of emission products generated by low-energy ion impacts, we carried out molecular dynamics simulations of the underlying collision cascades, using a reactive force field that accounts for the dynamic breaking and forming of bonds. A detailed explanation of the cluster formation and ejection processes for atomic oxygen and also atomic silicon bombardment of Si (100) is given for comparison.
authors.affiliation: Science and Analysis of Materials Department, Centre de Recherche Public - Gabriel Lippmann, 41 Rue du Brill, L-4422, Belvaux, Luxembourg.
authors.forename: Peter R
authors.initials: PR
authors.lastname: Barry
authors.forename: Patrick
authors.initials: P
authors.lastname: Philipp
authors.forename: Tom
authors.initials: T
authors.lastname: Wirtz
authors.forename: John
authors.initials: J
authors.lastname: Kieffer
keywords: SIMS; clusters; oxygen; silicon; simulation