title: Vertical III-V nanowire device integration on Si(100).
abstract: We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallographic orientations, including nanocrystalline Si. The nanowires investigated are epitaxially grown, single-crystalline, free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temperature, with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are electrically characterized. The results indicate a high uniformity and scalability in the fabrication process.
authors.affiliation: IBM Research-Zurich , Säumerstrasse 4, 8803, Rüschlikon, Switzerland.
authors.forename: Mattias
authors.initials: M
authors.lastname: Borg
authors.forename: Heinz
authors.initials: H
authors.lastname: Schmid
authors.forename: Kirsten E
authors.initials: KE
authors.lastname: Moselund
authors.forename: Giorgio
authors.initials: G
authors.lastname: Signorello
authors.forename: Lynne
authors.initials: L
authors.lastname: Gignac
authors.forename: John
authors.initials: J
authors.lastname: Bruley
authors.forename: Chris
authors.initials: C
authors.lastname: Breslin
authors.forename: Pratyush
authors.initials: P
authors.lastname: Das Kanungo
authors.forename: Peter
authors.initials: P
authors.lastname: Werner
authors.forename: Heike
authors.initials: H
authors.lastname: Riel