title: Spectroscopic-ellipsometric study of native oxide removal by liquid phase HF process.
abstract: Ex situspectroscopic ellipsometry (SE) measurements have been employed to investigate the effect of liquid-phase hydrofluoric acid (HF) cleaning on Si<100> surfaces for microelectromechanical systems application. The hydrogen terminated (H-terminated) Si surface was realized as an equivalent dielectric layer, and SE measurements are performed. The SE analyses indicate that after a 20-s 100:5 HF dip with rinse, the Si (100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si (100) surface was observed and analyzed by theex-situSE. Evidence for desorption of the H-terminated Si surface layer is studied using Fourier transform infrared spectroscopy and ellipsometry, and discussed. This piece of work explains the usage of anex situ, non-destructive technique capable of showing state of passivation, the H-termination of Si<100> surfaces.
authors.affiliation: Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, India ; Department of Electronics Engineering, Datta Meghe College of Engineering, Airoli, Navi, Mumbai, India.
authors.forename: Anil Sudhakar
authors.initials: AS
authors.lastname: Kurhekar
authors.affiliation: Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, India.
authors.forename: Prakash R
authors.initials: PR
authors.lastname: Apte
keywords: Cleavage; Ellipsometry; FTIR; MEMS; Native oxide removal; Silicon<100>; Spectroscopy