title: Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons.
abstract: We report localised-surface-plasmon (LSP) enhanced deep-ultraviolet light-emitting diodes (deep-UV LEDs) using Al nanoparticles for LSP coupling. Polygonal Al nanoparticles were fabricated on the top surfaces of the deep-UV LEDs using the oblique-angle deposition method. Both the top- and bottom-emission electroluminescence of deep-UV LEDs with 279 nm multiple-quantum-well emissions can be effectively enhanced by the coupling with the LSP generated in the Al nanoparticles. The primary bottom-emission wavelength is longer than the primary top-emission wavelength. This difference in wavelength can be attributed to the substrate-induced Fano resonance effect. For resonance modes with shorter wavelengths, the radiation fraction directed back into the LEDs is largest in the direction that is nearly parallel to the surface of the device and results in total reflection and re-absorption in the LEDs.
authors.affiliation: Department of Physics, Fujian Provincial Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen, 361005, P. R. China.
authors.forename: Kai
authors.initials: K
authors.lastname: Huang
authors.affiliation: Department of Physics, Fujian Provincial Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen, 361005, P. R. China.
authors.forename: Na
authors.initials: N
authors.lastname: Gao
authors.affiliation: Department of Physics, Fujian Provincial Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen, 361005, P. R. China.
authors.forename: Chunzi
authors.initials: C
authors.lastname: Wang
authors.affiliation: Department of Physics, Fujian Provincial Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen, 361005, P. R. China.
authors.forename: Xue
authors.initials: X
authors.lastname: Chen
authors.affiliation: Department of Physics, Fujian Provincial Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen, 361005, P. R. China.
authors.forename: Jinchai
authors.initials: J
authors.lastname: Li
authors.affiliation: Department of Physics, Fujian Provincial Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen, 361005, P. R. China.
authors.forename: Shuping
authors.initials: S
authors.lastname: Li
authors.affiliation: Department of Physics, Fujian Provincial Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen, 361005, P. R. China.
authors.forename: Xu
authors.initials: X
authors.lastname: Yang
authors.affiliation: Department of Physics, Fujian Provincial Key Laboratory of Semiconductor Materials and Application, Xiamen University, Xiamen, 361005, P. R. China.
authors.forename: Junyong
authors.initials: J
authors.lastname: Kang