title: Band gap-tunable molybdenum sulfide selenide monolayer alloy.
authors.affiliation: Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan; Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 106, Taiwan.
authors.forename: Sheng-Han
authors.initials: SH
authors.lastname: Su
authors.forename: Yu-Te
authors.initials: YT
authors.lastname: Hsu
authors.forename: Yung-Huang
authors.initials: YH
authors.lastname: Chang
authors.forename: Ming-Hui
authors.initials: MH
authors.lastname: Chiu
authors.forename: Chang-Lung
authors.initials: CL
authors.lastname: Hsu
authors.forename: Wei-Ting
authors.initials: WT
authors.lastname: Hsu
authors.forename: Wen-Hao
authors.initials: WH
authors.lastname: Chang
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
keywords: MoS2; band gap tuning; layered materials; transition metal dichalcogenides; two-dimensional materials