title: Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement.
abstract: We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: L
authors.initials: L
authors.lastname: Guo
authors.affiliation: 1] State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China [2] Collaborative Innovation Center of Quantum Matter, Beijing, China.
authors.forename: X Q
authors.initials: XQ
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: X T
authors.initials: XT
authors.lastname: Zheng
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: X L
authors.initials: XL
authors.lastname: Yang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: F J
authors.initials: FJ
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: N
authors.initials: N
authors.lastname: Tang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: L W
authors.initials: LW
authors.lastname: Lu
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: W K
authors.initials: WK
authors.lastname: Ge
authors.affiliation: 1] State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China [2] Collaborative Innovation Center of Quantum Matter, Beijing, China.
authors.forename: B
authors.initials: B
authors.lastname: Shen
authors.affiliation: Institute of High Pressure Physics "Unipress", Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw, Poland.
authors.forename: L H
authors.initials: LH
authors.lastname: Dmowski
authors.affiliation: Institute of High Pressure Physics "Unipress", Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw, Poland.
authors.forename: T
authors.initials: T
authors.lastname: Suski