title: Two-dimensional tin selenide nanostructures for flexible all-solid-state supercapacitors.
abstract: Due to their unique electronic and optoelectronic properties, tin selenide nanostructures show great promise for applications in energy storage and photovoltaic devices. Despite the great progress that has been achieved, the phase-controlled synthesis of two-dimensional (2D) tin selenide nanostructures remains a challenge, and their use in supercapacitors has not been explored. In this paper, 2D tin selenide nanostructures, including pure SnSe2 nanodisks (NDs), mixed-phase SnSe-SnSe2 NDs, and pure SnSe nanosheets (NSs), have been synthesized by reacting SnCl2 and trioctylphosphine (TOP)-Se with borane-tert-butylamine complex (BTBC) and 1,3-dimethyl-3,4,5,6-tetrahydro-2(1H)-pyrimidinone. Utilizing the interplay of TOP and BTBC and changing only the amount of BTBC, the phase-controlled synthesis of 2D tin selenide nanostructures is realized for the first time. Phase-dependent pseudocapacitive behavior is observed for the resulting 2D nanostructures. The specific capacitances of pure SnSe2 NDs (168 F g(-1)) and SnSe NSs (228 F g(-1)) are much higher than those of other reported materials (e.g., graphene-Mn3O4 nanorods and TiN mesoporous spheres); thus, these tin selenide materials were used to fabricate flexible, all-solid-state supercapacitors. Devices fabricated with these two tin selenide materials exhibited high areal capacitances, good cycling stabilities, excellent flexibilities, and desirable mechanical stabilities, which were comparable to or better than those reported recently for other solid-state devices based on graphene and 3D GeSe2 nanostructures. Additionally, the rate capability of the SnSe2 NDs device was much better than that of the SnSe NS device, indicating that SnSe2 NDs are promising active materials for use in high-performance, flexible, all-solid-state supercapacitors.
authors.affiliation: Jiangsu Key Laboratory of Biofunctional Materials, School of Chemistry and Materials Science, Nanjing Normal University , Nanjing 210023, People's Republic of China.
authors.forename: Chunli
authors.initials: C
authors.lastname: Zhang
authors.forename: Huanhuan
authors.initials: H
authors.lastname: Yin
authors.forename: Min
authors.initials: M
authors.lastname: Han
authors.forename: Zhihui
authors.initials: Z
authors.lastname: Dai
authors.forename: Huan
authors.initials: H
authors.lastname: Pang
authors.forename: Yulin
authors.initials: Y
authors.lastname: Zheng
authors.forename: Ya-Qian
authors.initials: YQ
authors.lastname: Lan
authors.forename: Jianchun
authors.initials: J
authors.lastname: Bao
authors.forename: Jianmin
authors.initials: J
authors.lastname: Zhu