title: Engineering of the chemical reactivity of the Ti/HfO₂ interface for RRAM: experiment and theory.
abstract: The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental-theoretical approach. Based on the use of oxygen-isotope marked Hf*O2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.
authors.affiliation: IHP , Im Technologiepark 25, 15236 Frankfurt an der Oder, Germany.
authors.forename: Pauline
authors.initials: P
authors.lastname: Calka
authors.forename: Malgorzata
authors.initials: M
authors.lastname: Sowinska
authors.forename: Thomas
authors.initials: T
authors.lastname: Bertaud
authors.forename: Damian
authors.initials: D
authors.lastname: Walczyk
authors.forename: Jarek
authors.initials: J
authors.lastname: Dabrowski
authors.forename: Peter
authors.initials: P
authors.lastname: Zaumseil
authors.forename: Christian
authors.initials: C
authors.lastname: Walczyk
authors.forename: Andrei
authors.initials: A
authors.lastname: Gloskovskii
authors.forename: Xavier
authors.initials: X
authors.lastname: Cartoixà
authors.forename: Jordi
authors.initials: J
authors.lastname: Suñé
authors.forename: Thomas
authors.initials: T
authors.lastname: Schroeder