title: Oxygen vacancy formation and annihilation in lanthanum cerium oxide as a metal reactive oxide on 4H-silicon carbide.
abstract: A mechanism regarding the redox reaction in lanthanum cerium oxide (LaxCeyOz) post-deposition annealed in reducing and oxidizing atmosphere was schematized and discussed in association with the presence of lanthanum as a substitutional cation. Analyses have been performed using X-ray diffraction, energy-filtered transmission electron microscopy, scanning transmission electron microscope-energy dispersive spectroscopy line scan, and capacitance-voltage measurements. The results showed the presence of an oxygen vacancy when La(3+) was in its substitution site, while annihilation of oxygen vacancy was accompanied by a displacement of La(3+) from the substitutional site to the interstitial site via a kick-out mechanism prior to its disappearance from the CeO2.
authors.affiliation: Electronic Materials Research Group, School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang, Malaysia. cheong@eng.usm.my wayfoong317@yahoo.com.sg.
authors.forename: Way Foong
authors.initials: WF
authors.lastname: Lim
authors.forename: Kuan Yew
authors.initials: KY
authors.lastname: Cheong