title: The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor.
abstract: A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na(+) ions was used to create a field-effect transistor based memory device. Addition of Na(+) ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, 134 Shinchondong, Seoul, 120-749, Korea. jmmyoung@yonsei.ac.kr.
authors.forename: Kyeong-Ju
authors.initials: KJ
authors.lastname: Moon
authors.forename: Tae Il
authors.initials: TI
authors.lastname: Lee
authors.forename: Sang-Hoon
authors.initials: SH
authors.lastname: Lee
authors.forename: Jae-Min
authors.initials: JM
authors.lastname: Myoung
mesh_terms: D046529:Microscopy, Electron, Transmission; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure; D012825:Silicon / Q000737:chemistry*; D012964:Sodium / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D012964:Sodium; D012825:Silicon