title: All-silicon spherical-Mie-resonator photodiode with spectral response in the infrared region.
abstract: Silicon is the material of choice for visible light photodetection and solar cell fabrication. However, due to the intrinsic band gap properties of silicon, most infrared photons are energetically useless. Here, we show the first example of a photodiode developed on a micrometre scale sphere made of polycrystalline silicon whose photocurrent shows the Mie modes of a classical spherical resonator. The long dwell time of resonating photons enhances the photocurrent response, extending it into the infrared region well beyond the absorption edge of bulk silicon. It opens the door for developing solar cells and photodetectors that may harvest infrared light more efficiently than silicon photovoltaic devices that are so far developed.
authors.affiliation: 1] Centro de Tecnologías Físicas, Unidad Asociada ICMM/CSIC-UPV, Universidad Politécnica de Valencia, Av. Los Naranjos s/n, Valencia 46022, Spain [2] Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz, Madrid 28049, Spain [3] Department d'Enginyeria Electrònica, Universitat Politècnica de Catalunya, Jordi Girona 1-3, Barcelona 08034, Spain.
authors.forename: M
authors.initials: M
authors.lastname: Garín
authors.affiliation: 1] Centro de Tecnologías Físicas, Unidad Asociada ICMM/CSIC-UPV, Universidad Politécnica de Valencia, Av. Los Naranjos s/n, Valencia 46022, Spain [2] Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz, Madrid 28049, Spain.
authors.forename: R
authors.initials: R
authors.lastname: Fenollosa
authors.affiliation: Department d'Enginyeria Electrònica, Universitat Politècnica de Catalunya, Jordi Girona 1-3, Barcelona 08034, Spain.
authors.forename: R
authors.initials: R
authors.lastname: Alcubilla
authors.affiliation: 1] Centro de Tecnologías Físicas, Unidad Asociada ICMM/CSIC-UPV, Universidad Politécnica de Valencia, Av. Los Naranjos s/n, Valencia 46022, Spain [2] Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz, Madrid 28049, Spain.
authors.forename: L
authors.initials: L
authors.lastname: Shi
authors.affiliation: Department d'Enginyeria Electrònica, Elèctrica i Automàtica. Universitat Rovira i Virgili. Av. Països Catalans 26, Tarragona 43007, Spain.
authors.forename: L F
authors.initials: LF
authors.lastname: Marsal
authors.affiliation: 1] Centro de Tecnologías Físicas, Unidad Asociada ICMM/CSIC-UPV, Universidad Politécnica de Valencia, Av. Los Naranjos s/n, Valencia 46022, Spain [2] Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz, Madrid 28049, Spain.
authors.forename: F
authors.initials: F
authors.lastname: Meseguer
mesh_terms: D004553:Electric Conductivity; D011211:Electric Power Supplies; D018625:Microscopy, Atomic Force; D008855:Microscopy, Electron, Scanning; D008863:Microspheres; D017785:Photons; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013055:Spectrophotometry, Infrared / Q000379:methods*
chemical_list: D012825:Silicon