title: Lithography and doping in strained Si towards atomically precise device fabrication.
abstract: We investigate the ability to introduce strain into atomic-scale silicon device fabrication by performing hydrogen lithography and creating electrically active phosphorus δ-doped silicon on strained silicon-on-insulator (sSOI) substrates. Lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat sSOI(001) surface with a scanning tunnelling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process was investigated allowing us to pattern feature-sizes from several microns down to 1.3 nm. In parallel we have investigated the impact of strain on the electrical properties of P:Si δ-doped layers. Despite the presence of strain inducing surface variations in the silicon substrate we still achieve high carrier densities (>1.0 × 10(14) cm(-2)) with mobilities of ∼100 cm(2) V(-1) s(-1). These results open up the possibility of a scanning-probe lithography approach to the fabrication of strained atomic-scale devices in silicon.
authors.affiliation: Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.
authors.forename: W C T
authors.initials: WC
authors.lastname: Lee
authors.forename: S R
authors.initials: SR
authors.lastname: McKibbin
authors.forename: D L
authors.initials: DL
authors.lastname: Thompson
authors.forename: K
authors.initials: K
authors.lastname: Xue
authors.forename: G
authors.initials: G
authors.lastname: Scappucci
authors.forename: N
authors.initials: N
authors.lastname: Bishop
authors.forename: G K
authors.initials: GK
authors.lastname: Celler
authors.forename: M S
authors.initials: MS
authors.lastname: Carroll
authors.forename: M Y
authors.initials: MY
authors.lastname: Simmons