title: Carbon nanotube circuit integration up to sub-20 nm channel lengths.
abstract: Carbon nanotube (CNT) field-effect transistors (CNFETs) are a promising emerging technology projected to achieve over an order of magnitude improvement in energy-delay product, a metric of performance and energy efficiency, compared to silicon-based circuits. However, due to substantial imperfections inherent with CNTs, the promise of CNFETs has yet to be fully realized. Techniques to overcome these imperfections have yielded promising results, but thus far only at large technology nodes (1 μm device size). Here we demonstrate the first very large scale integration (VLSI)-compatible approach to realizing CNFET digital circuits at highly scaled technology nodes, with devices ranging from 90 nm to sub-20 nm channel lengths. We demonstrate inverters functioning at 1 MHz and a fully integrated CNFET infrared light sensor and interface circuit at 32 nm channel length. This demonstrates the feasibility of realizing more complex CNFET circuits at highly scaled technology nodes.
authors.affiliation: Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States.
authors.forename: Max Marcel
authors.initials: MM
authors.lastname: Shulaker
authors.forename: Jelle
authors.initials: J
authors.lastname: Van Rethy
authors.forename: Tony F
authors.initials: TF
authors.lastname: Wu
authors.forename: Luckshitha Suriyasena
authors.initials: LS
authors.lastname: Liyanage
authors.forename: Hai
authors.initials: H
authors.lastname: Wei
authors.forename: Zuanyi
authors.initials: Z
authors.lastname: Li
authors.forename: Eric
authors.initials: E
authors.lastname: Pop
authors.forename: Georges
authors.initials: G
authors.lastname: Gielen
authors.forename: H-S Philip
authors.initials: HS
authors.lastname: Wong
authors.forename: Subhasish
authors.initials: S
authors.lastname: Mitra