title: Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator.
abstract: An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+δ) (- 0.04 ≤ δ ≤ +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO(2+δ) are comparable (greater than 7 GΩ cm) and a measured breakdown field is greater than 400 V μm(-1). Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.
authors.affiliation: Department of Materials Science and Engineering, Royal Institute of Technology-KTH, Brinellvägen 23, SE-100 44, Stockholm, Sweden.
authors.forename: A V
authors.initials: AV
authors.lastname: Riazanova
authors.forename: B N
authors.initials: BN
authors.lastname: Costanzi
authors.forename: A
authors.initials: A
authors.lastname: Aristov
authors.forename: Y G M
authors.initials: YG
authors.lastname: Rikers
authors.forename: V
authors.initials: V
authors.lastname: Ström
authors.forename: J J L
authors.initials: JJ
authors.lastname: Mulders
authors.forename: A V
authors.initials: AV
authors.lastname: Kabashin
authors.forename: E Dan
authors.initials: ED
authors.lastname: Dahlberg
authors.forename: L M
authors.initials: LM
authors.lastname: Belova