title: Transport in asymmetrically coupled donor-based silicon triple quantum dots.
abstract: We demonstrate serial electron transport through a donor-based triple quantum dot in silicon fabricated with nanoscale precision by scanning tunnelling microscopy lithography. From an equivalent circuit model, we calculate the electrochemical potentials of the dots allowing us to identify ground and excited states in finite bias transport. Significantly, we show that using a scanning tunnelling microscope, we can directly demonstrate that a ∼1 nm difference in interdot distance dramatically affects transport pathways between the three dots.
authors.affiliation: Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, University of New South Wales , Sydney, New South Wales 2052, Australia.
authors.forename: Thomas F
authors.initials: TF
authors.lastname: Watson
authors.forename: Bent
authors.initials: B
authors.lastname: Weber
authors.forename: Jill A
authors.initials: JA
authors.lastname: Miwa
authors.forename: Suddhasatta
authors.initials: S
authors.lastname: Mahapatra
authors.forename: Roel M P
authors.initials: RM
authors.lastname: Heijnen
authors.forename: Michelle Y
authors.initials: MY
authors.lastname: Simmons
mesh_terms: D000465:Algorithms; D004563:Electrochemistry; D004579:Electron Transport; D004583:Electrons; D016252:Microscopy, Scanning Tunneling; D045663:Quantum Dots / Q000737:chemistry* / Q000648:ultrastructure; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon