title: Transport properties of monolayer MoS2 grown by chemical vapor deposition.
abstract: Recent success in the growth of monolayer MoS2 via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS2. The devices show low temperature mobilities up to 500 cm(2) V(-1) s(-1) and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of optical phonons as a limiting factor is discussed.
authors.affiliation: Graphene Research Centre, National University of Singapore , 6 Science Drive 2, Singapore 117546.
authors.forename: Hennrik
authors.initials: H
authors.lastname: Schmidt
authors.forename: Shunfeng
authors.initials: S
authors.lastname: Wang
authors.forename: Leiqiang
authors.initials: L
authors.lastname: Chu
authors.forename: Minglin
authors.initials: M
authors.lastname: Toh
authors.forename: Rajeev
authors.initials: R
authors.lastname: Kumar
authors.forename: Weijie
authors.initials: W
authors.lastname: Zhao
authors.forename: A H Castro
authors.initials: AH
authors.lastname: Neto
authors.forename: Jens
authors.initials: J
authors.lastname: Martin
authors.forename: Shaffique
authors.initials: S
authors.lastname: Adam
authors.forename: Barbaros
authors.initials: B
authors.lastname: Özyilmaz
authors.forename: Goki
authors.initials: G
authors.lastname: Eda