title: Three-dimensional location of a single dopant with atomic precision by aberration-corrected scanning transmission electron microscopy.
abstract: Materials properties, such as optical and electronic response, can be greatly enhanced by isolated single dopants. Determining the full three-dimensional single-dopant defect structure and spatial distribution is therefore critical to understanding and adequately tuning functional properties. Combining quantitative Z-contrast scanning transmission electron microscopy images with image simulations, we show the direct determination of the atomic-scale depth location of an optically active, single atom Ce dopant embedded within wurtzite-type AlN. The method represents a powerful new tool for reconstructing three-dimensional information from a single, two-dimensional image.
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
authors.forename: Ryo
authors.initials: R
authors.lastname: Ishikawa
authors.forename: Andrew R
authors.initials: AR
authors.lastname: Lupini
authors.forename: Scott D
authors.initials: SD
authors.lastname: Findlay
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.forename: Stephen J
authors.initials: SJ
authors.lastname: Pennycook