title: Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.
abstract: Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.
authors.affiliation: Nanjing University, School of Electronic Science & Engineering, Nanjing 210093, Jiangsu, People's Republic of China. wanqing@nju.edu.cn yshi@nju.edu.cn.
authors.forename: Chang Jin
authors.initials: CJ
authors.lastname: Wan
authors.forename: Li Qiang
authors.initials: LQ
authors.lastname: Zhu
authors.forename: Ju Mei
authors.initials: JM
authors.lastname: Zhou
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.forename: Qing
authors.initials: Q
authors.lastname: Wan
mesh_terms: D004573:Electrolytes / Q000737:chemistry*; D007204:Indium / Q000737:chemistry; D036103:Nanotechnology; D010087:Oxides / Q000737:chemistry*; D010758:Phosphorus / Q000737:chemistry; D011522:Protons; D012822:Silicon Dioxide / Q000737:chemistry; D014173:Transistors, Electronic; D015034:Zinc Oxide / Q000737:chemistry
chemical_list: D004573:Electrolytes; D010087:Oxides; D011522:Protons; D007204:Indium; D010758:Phosphorus; C047711:indium oxide; D012822:Silicon Dioxide; D015034:Zinc Oxide