title: Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing.
abstract: We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well.
authors.forename: Hajer
authors.initials: H
authors.lastname: Makhloufi
authors.forename: Poonyasiri
authors.initials: P
authors.lastname: Boonpeng
authors.forename: Simone
authors.initials: S
authors.lastname: Mazzucato
authors.forename: Julien
authors.initials: J
authors.lastname: Nicolai
authors.forename: Alexandre
authors.initials: A
authors.lastname: Arnoult
authors.forename: Teresa
authors.initials: T
authors.lastname: Hungria
authors.forename: Guy
authors.initials: G
authors.lastname: Lacoste
authors.forename: Christophe
authors.initials: C
authors.lastname: Gatel
authors.forename: Anne
authors.initials: A
authors.lastname: Ponchet
authors.forename: Hélène
authors.initials: H
authors.lastname: Carrère
authors.forename: Xavier
authors.initials: X
authors.lastname: Marie
authors.affiliation: CNRS, LAAS, 7, avenue du Colonel Roche, Toulouse 31400, France. chantal.fontaine@laas.fr.
authors.forename: Chantal
authors.initials: C
authors.lastname: Fontaine