title: Epitaxial growth of asymmetrically-doped bilayer graphene for photocurrent generation.
abstract: An asymmetrically doped bilayer graphene is grown by modulation-doped chemical vapor deposition, which consists of one intrinsic layer and one nitrogen-doped layer according to AB stacking. The asymmetrically doped bilayer crystalline profile is found to extend the identical registry as adjacent pristine bilayer region, thus forming single-crystalline bilayer graphene p-n junctions. Efficient photocurrent with responsivity as high as 0.2 mA/W is generated at the bilayer p-n junctions via a hot carrier-assisted mechanism.
authors.affiliation: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhou
authors.forename: Kai
authors.initials: K
authors.lastname: Yan
authors.forename: Di
authors.initials: D
authors.lastname: Wu
authors.forename: Shuli
authors.initials: S
authors.lastname: Zhao
authors.forename: Li
authors.initials: L
authors.lastname: Lin
authors.forename: Li
authors.initials: L
authors.lastname: Jin
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.forename: Huan
authors.initials: H
authors.lastname: Wang
authors.forename: Qiang
authors.initials: Q
authors.lastname: Fu
authors.forename: Xinhe
authors.initials: X
authors.lastname: Bao
authors.forename: Hailin
authors.initials: H
authors.lastname: Peng
authors.forename: Zhongfan
authors.initials: Z
authors.lastname: Liu
keywords: asymmetrically doping; bilayer graphene; epitaxial growth; p-n junction; photocurrent generation