title: Oxide resistive memory with functionalized graphene as built-in selector element.
authors.affiliation: Department of Electrical Engineering, and Computer Science, University of Michigan, Ann Arbor, Michigan, 48109.
authors.forename: Yuchao
authors.initials: Y
authors.lastname: Yang
authors.forename: Jihang
authors.initials: J
authors.lastname: Lee
authors.forename: Seunghyun
authors.initials: S
authors.lastname: Lee
authors.forename: Che-Hung
authors.initials: CH
authors.lastname: Liu
authors.forename: Zhaohui
authors.initials: Z
authors.lastname: Zhong
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
keywords: RRAM; graphene; resistive memory; sneak path; threshold switching; trap-limited conduction