title: Visualizing the interfacial evolution from charge compensation to metallic screening across the manganite metal-insulator transition.
abstract: Electronic changes at polar interfaces between transition metal oxides offer the tantalizing possibility to stabilize novel ground states yet can also cause unintended reconstructions in devices. The nature of these interfacial reconstructions should be qualitatively different for metallic and insulating films as the electrostatic boundary conditions and compensation mechanisms are distinct. Here we directly quantify with atomic-resolution the charge distribution for manganite-titanate interfaces traversing the metal-insulator transition. By measuring the concentration and valence of the cations, we find an intrinsic interfacial electronic reconstruction in the insulating films. The total charge observed for the insulating manganite films quantitatively agrees with that needed to cancel the polar catastrophe. As the manganite becomes metallic with increased hole doping, the total charge build-up and its spatial range drop substantially. Direct quantification of the intrinsic charge transfer and spatial width should lay the framework for devices harnessing these unique electronic phases.
authors.affiliation: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA.
authors.forename: Julia A
authors.initials: JA
authors.lastname: Mundy
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
authors.forename: Yasuyuki
authors.initials: Y
authors.lastname: Hikita
authors.affiliation: Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Takeaki
authors.initials: T
authors.lastname: Hidaka
authors.affiliation: 1] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA [2] Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
authors.forename: Takeaki
authors.initials: T
authors.lastname: Yajima
authors.affiliation: Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan.
authors.forename: Takuya
authors.initials: T
authors.lastname: Higuchi
authors.affiliation: 1] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA [2] Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: Harold Y
authors.initials: HY
authors.lastname: Hwang
authors.affiliation: 1] School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA [2] Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA.
authors.forename: David A
authors.initials: DA
authors.lastname: Muller
authors.affiliation: 1] School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA [2] Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA.
authors.forename: Lena F
authors.initials: LF
authors.lastname: Kourkoutis