title: Tensile-strained nanoscale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor.
abstract: Tensile strained Ge/In0.16Ga0.84As heterostructure was grown in situ by molecular beam epitaxy using two separated growth chambers for Ge and III-V materials. Controlled growth conditions led to the presence of 0.75% in-plane tensile strain within Ge layer. High-resolution transmission electron microscopy confirmed pseudomorphic Ge with high crystalline quality and a sharp Ge/In0.16Ga0.84As heterointerface. Atomic force microscopy revealed a uniform two-dimensional cross-hatch surface morphology with a root-mean-square roughness of 1.26 nm. X-ray photoelectron spectroscopy demonstrated reduced tunneling-barrier-height compared with Ge/GaAs heterostructure. The superior structural properties suggest tensile strained Ge/In0.16Ga0.84As heterostructure would be a promising candidate for high-performance and energy-efficient tunnel field-effect transistor applications.
authors.affiliation: Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, ‡Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech , Blacksburg, Virginia 24061, United States.
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhu
authors.forename: Deepam
authors.initials: D
authors.lastname: Maurya
authors.forename: Shashank
authors.initials: S
authors.lastname: Priya
authors.forename: Mantu K
authors.initials: MK
authors.lastname: Hudait