title: Electric-field-modulated nonvolatile resistance switching in VO₂/PMN-PT(111) heterostructures.
abstract: The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.
authors.affiliation: Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China , Hefei 230026, People's Republic of China.
authors.forename: Bowen
authors.initials: B
authors.lastname: Zhi
authors.forename: Guanyin
authors.initials: G
authors.lastname: Gao
authors.forename: Haoran
authors.initials: H
authors.lastname: Xu
authors.forename: Feng
authors.initials: F
authors.lastname: Chen
authors.forename: Xuelian
authors.initials: X
authors.lastname: Tan
authors.forename: Pingfan
authors.initials: P
authors.lastname: Chen
authors.forename: Lingfei
authors.initials: L
authors.lastname: Wang
authors.forename: Wenbin
authors.initials: W
authors.lastname: Wu