title: Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation.
abstract: An industry standard 8'' silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor.
authors.affiliation: Integrated Nanotechnology Lab, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
authors.forename: Galo A Torres
authors.initials: GA
authors.lastname: Sevilla
authors.forename: Jhonathan P
authors.initials: JP
authors.lastname: Rojas
authors.forename: Hossain M
authors.initials: HM
authors.lastname: Fahad
authors.forename: Aftab M
authors.initials: AM
authors.lastname: Hussain
authors.forename: Rawan
authors.initials: R
authors.lastname: Ghanem
authors.forename: Casey E
authors.initials: CE
authors.lastname: Smith
authors.forename: Muhammad M
authors.initials: MM
authors.lastname: Hussain
keywords: FinFET; brain-architecture inspired computation; flexible; silicon; transparent