title: Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths.
abstract: A CMOS compatible post-processing method to reduce optical losses in silicon nitride (Si(3)N(4)) integrated optical waveguides is demonstrated. Using thin layer atomic layer deposition (ALD) of aluminum oxide (Al(2)O(3)) we demonstrate that surface roughness can be reduced. A 40 nm thick Al(2)O(3) layer is deposited by ALD over Si(3)N(4) based strip waveguides and its influence on the surface roughness and the waveguide loss is studied. As a result, an improvement in the waveguide loss, from very high loss (60 dB/cm) to low-loss regime (~5 dB/cm) is reported for a 220 nm x 500 nm Si(3)N(4) wire at 900 nm wavelength. This opens prospects to implement very low loss waveguides.
authors.forename: Amit
authors.initials: A
authors.lastname: Khanna
authors.forename: Ananth Z
authors.initials: AZ
authors.lastname: Subramanian
authors.forename: Markus
authors.initials: M
authors.lastname: Häyrinen
authors.forename: Shankar
authors.initials: S
authors.lastname: Selvaraja
authors.forename: Peter
authors.initials: P
authors.lastname: Verheyen
authors.forename: Dries
authors.initials: D
authors.lastname: Van Thourhout
authors.forename: Seppo
authors.initials: S
authors.lastname: Honkanen
authors.forename: Harri
authors.initials: H
authors.lastname: Lipsanen
authors.forename: Roel
authors.initials: R
authors.lastname: Baets