title: Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates.
abstract: We present successful synthesis of large area atomically thin MoSe2 films by selenization of MoO3 in a vapor transport chemical vapor deposition (CVD) system. The homogeneous thin film can reach an area of 1 × 1 cm(2) consisting primarily of monolayer and bilayer MoSe2 film. Scanning transmission electron microscopy (STEM) images reveal the highly crystalline nature of the thin film and the atomic structure of grain boundaries in monolayers. Raman and photoluminescence spectroscopy confirm the high quality of as-grown MoSe2 in optics, and electronic transport measurements highlight the potential applications of the sample in nanoelectronics.
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University , Singapore 637371.
authors.forename: Xin
authors.initials: X
authors.lastname: Lu
authors.forename: M Iqbal Bakti
authors.initials: MI
authors.lastname: Utama
authors.forename: Junhao
authors.initials: J
authors.lastname: Lin
authors.forename: Xue
authors.initials: X
authors.lastname: Gong
authors.forename: Jun
authors.initials: J
authors.lastname: Zhang
authors.forename: Yanyuan
authors.initials: Y
authors.lastname: Zhao
authors.forename: Sokrates T
authors.initials: ST
authors.lastname: Pantelides
authors.forename: Jingxian
authors.initials: J
authors.lastname: Wang
authors.forename: Zhili
authors.initials: Z
authors.lastname: Dong
authors.forename: Zheng
authors.initials: Z
authors.lastname: Liu
authors.forename: Wu
authors.initials: W
authors.lastname: Zhou
authors.forename: Qihua
authors.initials: Q
authors.lastname: Xiong