title: High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases.
abstract: A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, two-dimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources.
authors.forename: Van-Truong
authors.initials: VT
authors.lastname: Dai
authors.forename: Sheng-Di
authors.initials: SD
authors.lastname: Lin
authors.forename: Shih-Wei
authors.initials: SW
authors.lastname: Lin
authors.forename: Yi-Shan
authors.initials: YS
authors.lastname: Lee
authors.forename: Yin-Jie
authors.initials: YJ
authors.lastname: Zhang
authors.forename: Liang-Chen
authors.initials: LC
authors.lastname: Li
authors.forename: Chien-Ping
authors.initials: CP
authors.lastname: Lee