title: A 40 Gbit/s optical link on a 300-mm silicon platform.
abstract: We demonstrated 40 Gbit/s optical link by coupling a silicon (Si) optical modulator to a germanium (Ge) photo-detector from two separate photonic chips. The optical modulator was based on carrier depletion in a pn diode integrated in a 950-µm long Mach-Zehnder interferometer. The Ge photo-detector was a lateral pin diode butt coupled to a silicon waveguide. The overall loss, which is mainly due to coupling (3 grating couplers times ~4 dB) was estimated to be lower than 18 dB. That also included modulator loss (4.9-dB) and propagation loss (<1 dB/cm). Both optoelectronic devices have been fabricated on a 300-mm CMOS platform to address high volume production markets.
authors.forename: D
authors.initials: D
authors.lastname: Marris-Morini
authors.forename: L
authors.initials: L
authors.lastname: Virot
authors.forename: C
authors.initials: C
authors.lastname: Baudot
authors.forename: J-M
authors.initials: JM
authors.lastname: Fédéli
authors.forename: G
authors.initials: G
authors.lastname: Rasigade
authors.forename: D
authors.initials: D
authors.lastname: Perez-Galacho
authors.forename: J-M
authors.initials: JM
authors.lastname: Hartmann
authors.forename: S
authors.initials: S
authors.lastname: Olivier
authors.forename: P
authors.initials: P
authors.lastname: Brindel
authors.forename: P
authors.initials: P
authors.lastname: Crozat
authors.forename: F
authors.initials: F
authors.lastname: Bœuf
authors.forename: L
authors.initials: L
authors.lastname: Vivien