title: Ambipolar MoTe2 transistors and their applications in logic circuits.
abstract: We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.
authors.affiliation: WPI Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044, Japan; Department of Physics, National Chung-Hsing University, Taichung, 40227, Taiwan.
authors.forename: Yen-Fu
authors.initials: YF
authors.lastname: Lin
authors.forename: Yong
authors.initials: Y
authors.lastname: Xu
authors.forename: Sheng-Tsung
authors.initials: ST
authors.lastname: Wang
authors.forename: Song-Lin
authors.initials: SL
authors.lastname: Li
authors.forename: Mahito
authors.initials: M
authors.lastname: Yamamoto
authors.forename: Alex
authors.initials: A
authors.lastname: Aparecido-Ferreira
authors.forename: Wenwu
authors.initials: W
authors.lastname: Li
authors.forename: Huabin
authors.initials: H
authors.lastname: Sun
authors.forename: Shu
authors.initials: S
authors.lastname: Nakaharai
authors.forename: Wen-Bin
authors.initials: WB
authors.lastname: Jian
authors.forename: Keiji
authors.initials: K
authors.lastname: Ueno
authors.forename: Kazuhito
authors.initials: K
authors.lastname: Tsukagoshi
keywords: Schottky barriers; ambipolar transistors; electronics; transistors