title: Tunable, ultralow-power switching in memristive devices enabled by a heterogeneous graphene-oxide interface.
abstract: Memristive devices based on vertical heterostructures of graphene and TiOx show a significant power reduction that is up to ∼10(3) times smaller than that of conventional structures. This power reduction arises as a result of a tunneling barrier at the interface. The barrier is tunable, opening up the possibility of engineering several key memory characteristics.
authors.affiliation: National Laboratory of Solid-State Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Min
authors.initials: M
authors.lastname: Qian
authors.forename: Yiming
authors.initials: Y
authors.lastname: Pan
authors.forename: Fengyuan
authors.initials: F
authors.lastname: Liu
authors.forename: Miao
authors.initials: M
authors.lastname: Wang
authors.forename: Haoliang
authors.initials: H
authors.lastname: Shen
authors.forename: Daowei
authors.initials: D
authors.lastname: He
authors.forename: Baigeng
authors.initials: B
authors.lastname: Wang
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.forename: Feng
authors.initials: F
authors.lastname: Miao
authors.forename: Xinran
authors.initials: X
authors.lastname: Wang
keywords: graphene; heterostructures; memristivity; switching devices; ultralow power