title: Simple way to engineer metal-semiconductor interface for enhanced performance of perovskite organic lead iodide solar cells.
abstract: A thin wide band gap organic semiconductor N,N,N',N'-tetraphenyl-benzidine layer has been introduced by spin-coating to engineer the metal-semiconductor interface in the hole-conductor-free perovskite solar cells. The average cell power conversion efficiency (PCE) has been enhanced from 5.26% to 6.26% after the modification and a highest PCE of 6.71% has been achieved. By the aid of electrochemical impedance spectroscopy and dark current analysis, it is revealed that this modification can increase interfacial resistance of CH3NH3PbI3/Au interface and retard electron recombination process in the metal-semiconductor interface.
authors.affiliation: Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Yuzhuan
authors.initials: Y
authors.lastname: Xu
authors.forename: Jiangjian
authors.initials: J
authors.lastname: Shi
authors.forename: Songtao
authors.initials: S
authors.lastname: Lv
authors.forename: Lifeng
authors.initials: L
authors.lastname: Zhu
authors.forename: Juan
authors.initials: J
authors.lastname: Dong
authors.forename: Huijue
authors.initials: H
authors.lastname: Wu
authors.forename: Yin
authors.initials: Y
authors.lastname: Xiao
authors.forename: Yanhong
authors.initials: Y
authors.lastname: Luo
authors.forename: Shirong
authors.initials: S
authors.lastname: Wang
authors.forename: Dongmei
authors.initials: D
authors.lastname: Li
authors.forename: Xianggao
authors.initials: X
authors.lastname: Li
authors.forename: Qingbo
authors.initials: Q
authors.lastname: Meng