title: Semiconductor alloy nanoribbon lateral heterostructures for high-performance photodetectors.
abstract: High-performance visible-light photodetectors are achieved based on single nanoribbon lateral heterostructures composed of two different semiconductor alloys epitaxially grown in the lateral direction. They reveal superior spectral response range, responsivity, Ion/Ioff ratio, and external quantum efficiency, relative to devices based on single composition structures.
authors.affiliation: Key Laboratory for Micro-Nano Physics and Technology of Hunan Province and State Key Laboratory of Chemo/biosensing and Chemometrics (CBSC), Hunan University, Changsha, 410082, P.R. China.
authors.forename: Pengfei
authors.initials: P
authors.lastname: Guo
authors.forename: Wei
authors.initials: W
authors.lastname: Hu
authors.forename: Qinglin
authors.initials: Q
authors.lastname: Zhang
authors.forename: Xiujuan
authors.initials: X
authors.lastname: Zhuang
authors.forename: Xiaoli
authors.initials: X
authors.lastname: Zhu
authors.forename: Hong
authors.initials: H
authors.lastname: Zhou
authors.forename: Zhengping
authors.initials: Z
authors.lastname: Shan
authors.forename: Jinyou
authors.initials: J
authors.lastname: Xu
authors.forename: Anlian
authors.initials: A
authors.lastname: Pan
keywords: high-performance; lateral heterostructure; nanoribbon; photodetector; semiconductor