title: Strain effect on the optical polarization properties of c-plane Al₀.₂₆Ga₀.₇₄N/GaN superlattices.
abstract: A new approach to realize ultraviolet (UV) light emitting diodes (LEDs) is using AlN/GaN or AlxGa1-xN/GaN SL structure as active layers. Effect of a uniaxial strain on the degree of polarization (DOP) of Al0.26Ga0.74N/GaN superlattices (SLs) grown on c-plane sapphire substrates has been investigated. Compared with AlN/AlxGa1-xN quantum wells, the DOP of the light emission from Al0.26Ga0.74N/GaN SLs shows an opposite variation tendency with in-plane strain and quantum confinement. The results would be helpful to the structural design of c-plane deep-UV and UVA LEDs to enhance surface emission.
authors.forename: Shunfei
authors.initials: S
authors.lastname: Fan
authors.forename: Zhixin
authors.initials: Z
authors.lastname: Qin
authors.forename: Chenguang
authors.initials: C
authors.lastname: He
authors.forename: Xinqiang
authors.initials: X
authors.lastname: Wang
authors.forename: Bo
authors.initials: B
authors.lastname: Shen
authors.forename: Guoyi
authors.initials: G
authors.lastname: Zhang