title: Experimental bifurcation-cascade diagram of an external-cavity semiconductor laser.
abstract: This Letter is the first to report experimental bifurcation diagrams of an external-cavity semiconductor laser (ECSL) in the low-to-moderate current injection regime and long-cavity case. Based on the bifurcation cascade behavior which was unveiled by Hohl and Gavrielides [Phys. Rev. Lett. 82, 1148-1151 (1999)], we present a detailed experimental investigation of the nonlinear dynamics of ECSLs and of the robustness of the cascade to changes in the current and cavity length. Also, we report for the first time a well resolved experimental Hopf bifurcation in an ECSL. Based on the Lang and Kobayashi model, we identify the dynamical regimes and the instabilities involved in the cascade, as well as the influence of the current and cavity length on the cascade.
authors.forename: Byungchil
authors.initials: B
authors.lastname: Kim
authors.forename: Nianqiang
authors.initials: N
authors.lastname: Li
authors.forename: A
authors.initials: A
authors.lastname: Locquet
authors.forename: D S
authors.initials: DS
authors.lastname: Citrin
mesh_terms: D017076:Computer-Aided Design; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D054023:Lasers, Semiconductor; D020349:Surface Plasmon Resonance / Q000295:instrumentation*