title: High-gain inverters based on WSe2 complementary field-effect transistors.
abstract: In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. The n-FET is realized by utilizing selective surface charge transfer doping with potassium to form degenerately doped n+ contacts for electron injection. An ON/OFF current ratio of >10(4) is achieved for both n- and p-FETs with similar ON current densities. A dc voltage gain of >12 is measured for the complementary WSe2 inverter. This work presents an important advance toward realization of complementary logic devices based on layered chalcogenide semiconductors for electronic applications.
authors.affiliation: Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
authors.forename: Mahmut
authors.initials: M
authors.lastname: Tosun
authors.forename: Steven
authors.initials: S
authors.lastname: Chuang
authors.forename: Hui
authors.initials: H
authors.lastname: Fang
authors.forename: Angada B
authors.initials: AB
authors.lastname: Sachid
authors.forename: Mark
authors.initials: M
authors.lastname: Hettick
authors.forename: Yongjing
authors.initials: Y
authors.lastname: Lin
authors.forename: Yuping
authors.initials: Y
authors.lastname: Zeng
authors.forename: Ali
authors.initials: A
authors.lastname: Javey