title: Resistive switching behavior in gelatin thin films for nonvolatile memory application.
abstract: This paper presents the characteristics of gelatin, which can cause reproducible resistive switching and bipolar resistive switching in aluminum (Al)/gelatin (35 nm)/ITO devices. The memory devices exhibited a high ON/OFF ratio of over 10(6) and a long retention time of over 10(5) seconds. The resistive switching mechanism was investigated using the high-angle dark field transmission electron microscopy image of Al/gelatin/ITO devices in the pristine high-resistance state (HRS) and then in returning to HRS after the RESET process. The energy-dispersive X-ray spectroscopy analysis revealed the aggregation of N and Al elements and the simultaneous presence of carbon and oxygen elements in the rupture of filament paths. Furthermore, via a current-sensing atomic force microscopy, we found that conduction paths in the ON-state are distributed in a highly localized area, which is associated with a carbon-rich filamentary switching mechanism. These results support that the chelation of N binding with Al ions improves the conductivity of the low-resistance state but not the production of metal filaments.
authors.affiliation: Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng-Kung University , Tainan 701, Taiwan.
authors.forename: Yu-Chi
authors.initials: YC
authors.lastname: Chang
authors.forename: Yeong-Her
authors.initials: YH
authors.lastname: Wang
mesh_terms: D000535:Aluminum / Q000737:chemistry; D004867:Equipment Design; D005780:Gelatin / Q000737:chemistry*; D018625:Microscopy, Atomic Force; D046529:Microscopy, Electron, Transmission
chemical_list: C015233:gelatin film; D005780:Gelatin; D000535:Aluminum