title: Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires.
abstract: The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved photoluminescence (TRPL). A reduced internal polarization electric field was found to account for the observed enhancement in the radiative recombination rate and internal quantum efficiency of the MQWs on NWs. Additionally, the excitation-dependent TRPL results indicate a significantly depressed Auger recombination in MQWs grown on NWs that can be attributed to the feature of ultralow dislocation density of the MQWs grown over GaN nanostructures.
authors.forename: Guanjun
authors.initials: G
authors.lastname: You
authors.forename: Jie
authors.initials: J
authors.lastname: Liu
authors.forename: Zhenyu
authors.initials: Z
authors.lastname: Jiang
authors.forename: Li
authors.initials: L
authors.lastname: Wang
authors.forename: N A
authors.initials: NA
authors.lastname: El-Masry
authors.forename: A M
authors.initials: AM
authors.lastname: Hosalli
authors.forename: Salah M
authors.initials: SM
authors.lastname: Bedair
authors.forename: Jian
authors.initials: J
authors.lastname: Xu