title: High responsivity and gate tunable graphene-MoS2 hybrid phototransistor.
abstract: A 2D atomic-layer-thickness phototransistor based on a graphene-MoS2 bybrid device is constructed with a photoresponse much larger than that of individual graphene or MoS2 based phototransistors. Strong and selective light absorption in the MoS2 layer creates electric charges that are transferred to graphene layers derived by a build-in electrical field, where they recirculate many times due to the high carrier mobility of graphene. Gate tunable Fermi level in graphene layer allows the responsivity of this hybrid phototransistor to be continuously tuned from 0 to about 10(4) mA/W by the gate voltage. Furthermore, large scale, flexible, and transparent 2D phototransistors with high responsivity are constructed from the CVD-grown graphene and MoS2 flakes. The high responsivity, gate-tunable sensitivity, wavelength selectivity, and compatibility with current circuit technologies of this type device give it great potential for future application in integrated nano-optoelectronic systems.
authors.affiliation: Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Hua
authors.initials: H
authors.lastname: Xu
authors.forename: Juanxia
authors.initials: J
authors.lastname: Wu
authors.forename: Qingliang
authors.initials: Q
authors.lastname: Feng
authors.forename: Nannan
authors.initials: N
authors.lastname: Mao
authors.forename: Chunming
authors.initials: C
authors.lastname: Wang
authors.forename: Jin
authors.initials: J
authors.lastname: Zhang
keywords: MoS2; gate tunable; graphene; hybrid device; phototransistor