title: 4-λ InGaAsP-Si distributed feedback evanescent lasers with varying silicon waveguide width.
abstract: A four-wavelength silicon hybrid laser array operating at room temperature is realized by evanescently coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed feedback gratings based on selective-area metal bonding technology. The lasers have emission peaks between 1539.9 and 1546.1 nm with a wavelength spacing of about 2.0 nm. The single laser has a typical threshold current of 50 mA and side-mode suppression ratio of 20 dB. The silicon waveguides are fabricated simply by standard photolithography and holographic lithography which are CMOS compatible.
authors.forename: Li
authors.initials: L
authors.lastname: Tao
authors.forename: Lijun
authors.initials: L
authors.lastname: Yuan
authors.forename: Yanping
authors.initials: Y
authors.lastname: Li
authors.forename: Hongyan
authors.initials: H
authors.lastname: Yu
authors.forename: Baojun
authors.initials: B
authors.lastname: Wang
authors.forename: Qiang
authors.initials: Q
authors.lastname: Kan
authors.forename: Weixi
authors.initials: W
authors.lastname: Chen
authors.forename: Jiaoqing
authors.initials: J
authors.lastname: Pan
authors.forename: Guangzhao
authors.initials: G
authors.lastname: Ran
authors.forename: Wei
authors.initials: W
authors.lastname: Wang