title: Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters.
abstract: We characterise THz output of lateral photo-Dember (LPD) emitters based on semi-insulating (SI), unannealed and annealed low temperature grown (LTG) GaAs. Saturation of THz pulse power with optical fluence is observed, with unannealed LTG GaAs showing highest saturation fluence at 1.1 ± 0.1 mJ cm(-2). SI-GaAs LPD emitters show a flip in signal polarity with optical fluence that is attributed to THz emission from the metal-semiconductor contact. Variation in optical polarisation affects THz pulse power that is attributed to a local optical excitation near the metal contact.
authors.forename: D
authors.initials: D
authors.lastname: McBryde
authors.forename: M E
authors.initials: ME
authors.lastname: Barnes
authors.forename: S A
authors.initials: SA
authors.lastname: Berry
authors.forename: P
authors.initials: P
authors.lastname: Gow
authors.forename: H E
authors.initials: HE
authors.lastname: Beere
authors.forename: D A
authors.initials: DA
authors.lastname: Ritchie
authors.forename: V
authors.initials: V
authors.lastname: Apostolopoulos