title: A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector.
abstract: We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.
authors.forename: Myung-Jae
authors.initials: MJ
authors.lastname: Lee
authors.forename: Jin-Sung
authors.initials: JS
authors.lastname: Youn
authors.forename: Kang-Yeob
authors.initials: KY
authors.lastname: Park
authors.forename: Woo-Young
authors.initials: WY
authors.lastname: Choi
mesh_terms: D000669:Amplifiers, Electronic; D004867:Equipment Design; D019544:Equipment Failure Analysis; D055096:Optical Devices; D010783:Photometry / Q000295:instrumentation*; D012666:Semiconductors; D018511:Systems Integration; D013685:Telecommunications / Q000295:instrumentation*