title: Application of three-dimensionally area-selective atomic layer deposition for selectively coating the vertical surfaces of standing nanopillars.
abstract: We describe a strategy for selectively coating the vertical surfaces of standing nanopillars using area-selective atomic layer deposition (ALD). Hydrophobic self-assembled monolayers (SAMs) are utilised to selectively inhibit the coating of oxides on the modified horizontal regions to ensure that only the vertical surfaces of vertical standing nanorods are coated using ALD processes. This method makes it possible to fabricate vertical nanodevices using a simple process of depositing oxide layer on a vertical surface, and can also be applied to the area-selective surface passivation of other standing structures.
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
authors.forename: Wenjing
authors.initials: W
authors.lastname: Dong
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
authors.forename: Kenan
authors.initials: K
authors.lastname: Zhang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
authors.forename: Yun
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
authors.forename: Tiaoxing
authors.initials: T
authors.lastname: Wei
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Sun
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
authors.forename: Xin
authors.initials: X
authors.lastname: Chen
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
authors.forename: Ning
authors.initials: N
authors.lastname: Dai