title: High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.
abstract: We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases from 3 000 cm(2)V(-1)s(-1) to >11 000 cm(2)V(-1)s(-1) at 0.3 K. Additionally, graphene electron concentration tends to decrease from a few 10(12) cm(-2) to less than 10(12) cm(-2). For a typical large (30 × 280 μm(2)) Hall bar, we report the observation of the integer quantum Hall states at 0.3 K with well developed transversal resistance plateaus at Landau level filling factors of ν = 2, 6, 10, 14... 42 and Shubnikov de Haas oscillation of the longitudinal resistivity observed from about 1 T. In such a device, the Hall state quantization at ν = 2, at 19 T and 0.3 K, can be very robust: the dissipation in electronic transport can stay very low, with the longitudinal resistivity lower than 5 mΩ, for measurement currents as high as 250 μA. This is very promising in the view of an application in metrology.
authors.affiliation: Laboratoire de Photonique et de Nanostructures (CNRS - LPN), Route de Nozay, 91460 Marcoussis, France.
authors.forename: E
authors.initials: E
authors.lastname: Pallecchi
authors.affiliation: Laboratoire National de Métrologie et d'Essais, 29 Avenue Roger Hennequin, 78197 Trappes, France.
authors.forename: F
authors.initials: F
authors.lastname: Lafont
authors.affiliation: Laboratoire de Photonique et de Nanostructures (CNRS - LPN), Route de Nozay, 91460 Marcoussis, France.
authors.forename: V
authors.initials: V
authors.lastname: Cavaliere
authors.affiliation: Laboratoire National de Métrologie et d'Essais, 29 Avenue Roger Hennequin, 78197 Trappes, France.
authors.forename: F
authors.initials: F
authors.lastname: Schopfer
authors.affiliation: Laboratoire de Photonique et de Nanostructures (CNRS - LPN), Route de Nozay, 91460 Marcoussis, France.
authors.forename: D
authors.initials: D
authors.lastname: Mailly
authors.affiliation: Laboratoire National de Métrologie et d'Essais, 29 Avenue Roger Hennequin, 78197 Trappes, France.
authors.forename: W
authors.initials: W
authors.lastname: Poirier
authors.affiliation: Laboratoire de Photonique et de Nanostructures (CNRS - LPN), Route de Nozay, 91460 Marcoussis, France.
authors.forename: A
authors.initials: A
authors.lastname: Ouerghi