title: Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory.
abstract: Three-dimensional vertical resistive-switching random access memory (VRRAM) is the most anticipated candidate for fulfilling the strict requirements of the disruptive storage-class memory technology, including low bit cost, fast access time, low-power nonvolatile storage,and excellent endurance. However, an essential self-selecting resistive-switching cell that satisfies these requirements has yet to be developed. In this study, we developed a TaOx/TiO2 double-layer V-RRAM containing numerous highly desired features, including: (1) a self-rectifying ratio of up to 10³ with a sub-μA operating current, (2) little cycle-to-cycle and layer-to-layer variation, (3) a steep vertical sidewall profile for high-density integration, (4) forming-free and self-compliance characteristics for a simple peripheral circuit design, and (5) an extrapolated endurance of over 10¹⁵ cycles at 100 °C. Furthermore, the switching and self-rectifying mechanisms were successfully modeled using oxygen ion migration and homogeneous barrier modulation. We also suggest the new possibility of monolithically integrating working and storage memory by exploiting a unique tradeoff between retention time and endurance.
authors.forename: Chung-Wei
authors.initials: CW
authors.lastname: Hsu
authors.forename: Yu-Fen
authors.initials: YF
authors.lastname: Wang
authors.forename: Chia-Chen
authors.initials: CC
authors.lastname: Wan
authors.forename: I-Ting
authors.initials: IT
authors.lastname: Wang
authors.forename: Chun-Tse
authors.initials: CT
authors.lastname: Chou
authors.forename: Wei-Li
authors.initials: WL
authors.lastname: Lai
authors.forename: Yao-Jen
authors.initials: YJ
authors.lastname: Lee
authors.forename: Tuo-Hung
authors.initials: TH
authors.lastname: Hou