title: Electronic excitations of a magnetic impurity state in the diluted magnetic semiconductor (Ga,Mn)As.
abstract: The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic x-ray scattering. From configuration-interaction cluster-model calculations, the line shapes of the Mn L3 resonant inelastic x-ray scattering spectra can be explained by d-d excitations from the Mn ground state dominated by charge-transferred states, in which hole carriers are bound to the Mn impurities, rather than a pure acceptor Mn2+ ground state. Unlike archetypical d-d excitation, the peak widths are broader than the experimental energy resolution. We attribute the broadening to a finite lifetime of the d-d excitations, which decay rapidly to electron-hole pairs in the host valence and conduction bands through the hybridization of the Mn 3d orbital with the ligand band.
authors.affiliation: Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Kobayashi
authors.affiliation: Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan and Institute for Solid State Physics, The University of Tokyo, 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan.
authors.forename: H
authors.initials: H
authors.lastname: Niwa
authors.affiliation: Quantum Beam Science Directorate, Japan Atomic Energy Agency, Sayo-gun, Hyogo 679-5148, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Takeda
authors.affiliation: Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan.
authors.forename: A
authors.initials: A
authors.lastname: Fujimori
authors.affiliation: Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Senba
authors.affiliation: Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan.
authors.forename: H
authors.initials: H
authors.lastname: Ohashi
authors.affiliation: Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan.
authors.forename: A
authors.initials: A
authors.lastname: Tanaka
authors.affiliation: Department of Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
authors.forename: S
authors.initials: S
authors.lastname: Ohya
authors.affiliation: Department of Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
authors.forename: P N
authors.initials: PN
authors.lastname: Hai
authors.affiliation: Department of Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Tanaka
authors.affiliation: Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan and Institute for Solid State Physics, The University of Tokyo, 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Harada
authors.affiliation: Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Oshima