title: Laser parallel nanofabrication by single femtosecond pulse near-field ablation using photoresist masks.
abstract: A new near-field processing method by femtosecond laser ablation using photoresist enhancing masks is numerically and experimentally investigated. Periodical structures with 2 μm pitch, 1 μm width and 300 nm height, created in polymethyl methacrylate photoresist by e-beam lithography, were used to intensify the incident laser radiation. The near-field distribution and the intensification factor of the optical radiation were computed using the Finite-Difference-Time-Domain numerical simulations. The pattern of the photoresist mask was imprinted on the surface of a silicon wafer. Using a single infrared femtosecond laser pulse, uniform and continuum grooves with the width in the range of 250 nm were obtained on large silicon surface.
authors.forename: Florin
authors.initials: F
authors.lastname: Jipa
authors.forename: Adrian
authors.initials: A
authors.lastname: Dinescu
authors.forename: Mihaela
authors.initials: M
authors.lastname: Filipescu
authors.forename: Iulia
authors.initials: I
authors.lastname: Anghel
authors.forename: Marian
authors.initials: M
authors.lastname: Zamfirescu
authors.forename: Razvan
authors.initials: R
authors.lastname: Dabu