title: Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors.
abstract: A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.
authors.affiliation: Eindhoven University of Technology, P.O. Box 513, 5600, MB, Eindhoven, The Netherlands; Philips Research Laboratories, High Tech Campus 4, 5656, AE, Eindhoven, The Netherlands.
authors.forename: W S Christian
authors.initials: WS
authors.lastname: Roelofs
authors.forename: Mark-Jan
authors.initials: MJ
authors.lastname: Spijkman
authors.forename: Simon G J
authors.initials: SG
authors.lastname: Mathijssen
authors.forename: René A J
authors.initials: RA
authors.lastname: Janssen
authors.forename: Dago M
authors.initials: DM
authors.lastname: de Leeuw
authors.forename: Martijn
authors.initials: M
authors.lastname: Kemerink
keywords: ambipolar; diketopyrrolopyrrole; dual-gate; lasing; organic light-emitting field-effect transistor