title: Growth of millimeter-size single crystal graphene on Cu foils by circumfluence chemical vapor deposition.
abstract: A simply and reproducible way is proposed to significantly suppress the nucleation density of graphene on the copper foil during the chemical vapor deposition process. By inserting a copper foil into a tube with one close end, the nucleation density on the copper foils can be reduced by more than five orders of magnitude and an ultra-low nucleation density of ~10 nucleus/cm(2) has been achieved. The structural analyses demonstrate that single crystal monolayer graphene with a lateral size of 1.9 mm can be grown on the copper foils under the optimized growth condition. The electrical transport studies show that the mobility of such single crystal graphene is around 2400 cm(2)/Vs.
authors.affiliation: 1] Department of Physics, Nanchang University, Nanchang 330031, P.R. China [2].
authors.forename: Chaocheng
authors.initials: C
authors.lastname: Wang
authors.affiliation: 1] College of Science, National University of Defense Technology, Changsha 410073, P. R. China [2].
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117542.
authors.forename: Cheng
authors.initials: C
authors.lastname: Han
authors.affiliation: College of Science, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Guang
authors.initials: G
authors.lastname: Wang
authors.affiliation: Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China.
authors.forename: Binbing
authors.initials: B
authors.lastname: Tang
authors.affiliation: Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China.
authors.forename: Changxin
authors.initials: C
authors.lastname: Tang
authors.affiliation: Department of Physics, Nanchang University, Nanchang 330031, P.R. China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China.
authors.forename: Wennan
authors.initials: W
authors.lastname: Zou
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117542.
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: 1] College of Science, National University of Defense Technology, Changsha 410073, P. R. China [2] State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Xue-Ao
authors.initials: XA
authors.lastname: Zhang
authors.affiliation: 1] College of Science, National University of Defense Technology, Changsha 410073, P. R. China [2] State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Shiqiao
authors.initials: S
authors.lastname: Qin
authors.affiliation: 1] College of Science, National University of Defense Technology, Changsha 410073, P. R. China [2] State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, P. R. China.
authors.forename: Shengli
authors.initials: S
authors.lastname: Chang
authors.affiliation: 1] Department of Physics, Nanchang University, Nanchang 330031, P.R. China [2] College of Science, National University of Defense Technology, Changsha 410073, P. R. China [3] Institute for Advanced Study, Nanchang University, Nanchang 330031, P. R. China.
authors.forename: Li
authors.initials: L
authors.lastname: Wang