Addressing single nitrogen-vacancy centers in diamond with transparent in-plane gate structures.
For many applications of the nitrogen-vacancy (NV) center in diamond, the understanding and active control of its charge state is highly desired. In this work, we demonstrate the reversible manipulation of the charge state of a single NV center from NV(-) across NV(0) to a nonfluorescent, dark state by using an all-diamond in-plane gate nanostructure. Applying a voltage to the in-plane gate structure can influence the energy band bending sufficiently for charge state conversion of NV centers. These diamond in-plane structures can function as transparent top gates, enabling the distant control of the charge state of NV centers tens of micrometers away from the nanostructure.
Walter Schottky Institut, Technische Universität München , Munich, Germany.
Moritz V
MV
Hauf
Patrick
P
Simon
Nabeel
N
Aslam
Matthias
M
Pfender
Philipp
P
Neumann
Sébastien
S
Pezzagna
Jan
J
Meijer
Jörg
J
Wrachtrup
Martin
M
Stutzmann
Friedemann
F
Reinhard
José A
JA
Garrido