Non-volatile organic memory with sub-millimetre bending radius.
High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.
1] Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea [2].
Richard Hahnkee
RH
Kim
1] School of Mechanical Engineering, Yonsei University, Seoul 120-749, Korea [2].
Hae Jin
HJ
Kim
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
Insung
I
Bae
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
Sun Kak
SK
Hwang
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
Dhinesh Babu
DB
Velusamy
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
Suk Man
SM
Cho
Elements Chemistry Laboratory, RIKEN, Wako 351-0198, Japan.
Kazuto
K
Takaishi
Elements Chemistry Laboratory, RIKEN, Wako 351-0198, Japan.
Tsuyoshi
T
Muto
Materials Characterization Support Unit, RIKEN Center for Emergent Matter Science, Wako 351-0198, Japan.
Daisuke
D
Hashizume
Elements Chemistry Laboratory, RIKEN, Wako 351-0198, Japan.
Masanobu
M
Uchiyama
Elements Chemistry Laboratory, RIKEN, Wako 351-0198, Japan.
Pascal
P
André
Institut Parisien de Chimie Moléculaire, Chimie des Polymères, Université Pierre et Marie Curie, UMR 8232, 3 rue Galilée, 75252 Ivry, France.
Fabrice
F
Mathevet
Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, CNRS-Université de Strasbourg, 23 rue du Loess, 67034 Strasbourg Cedex 2, France.
Benoit
B
Heinrich
Elements Chemistry Laboratory, RIKEN, Wako 351-0198, Japan.
Tetsuya
T
Aoyama
School of Mechanical Engineering, Yonsei University, Seoul 120-749, Korea.
Dae-Eun
DE
Kim
School of Mechanical Engineering, Yonsei University, Seoul 120-749, Korea.
Hyungsuk
H
Lee
1] Elements Chemistry Laboratory, RIKEN, Wako 351-0198, Japan [2] Department of Physics, CNRS-Ewha International Research Center, Ewha Womans University, Seoul 120-750, Korea.
Jean-Charles
JC
Ribierre
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
Cheolmin
C
Park