Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method.
A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2 V to 7 V. In the reliability test, the device exhibited a good endurance of over 10(5) cycles and a long data retention of over 10(5) s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Sungbuk-gu, Seoul 136-701, Republic of Korea.
Hee-Dong
HD
Kim
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Sungbuk-gu, Seoul 136-701, Republic of Korea.
Min Ju
MJ
Yun
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Sungbuk-gu, Seoul 136-701, Republic of Korea.
Jae Hoon
JH
Lee
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Sungbuk-gu, Seoul 136-701, Republic of Korea.
Kyoeng Heon
KH
Kim
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Sungbuk-gu, Seoul 136-701, Republic of Korea.
Tae Geun
TG
Kim