The electronic transport of top subband and disordered sea in an InAs nanowire in the presence of a mobile gate.
We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire (R(wire) ∼ 30 kΩ) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the amplitude of the observed quasi-periodic oscillations are investigated in detail as a function of electron concentration in the linear and non-linear regime. We demonstrate the influence of the tip-to-sample distance on the ability to locally affect the top subband electrons as well as the electrons in the disordered sea. Furthermore, we introduce a new method of detection of the subband occupation in an InAs wire, which allows us to evaluate the number of electrons in the conductive band of the wire.
Institute of Solid State Physics, Russian Academy of Science, Chernogolovka, 142432, Russia.
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Zhukov
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Volk
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Winden
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Hardtdegen
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Schäpers