Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium.
The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic, photonic, mechanical, and other devices based on graphene. Here, we describe wafer-scale growth of wrinkle-free single-crystal monolayer graphene on silicon wafer using a hydrogen-terminated germanium buffer layer. The anisotropic twofold symmetry of the germanium (110) surface allowed unidirectional alignment of multiple seeds, which were merged to uniform single-crystal graphene with predefined orientation. Furthermore, the weak interaction between graphene and underlying hydrogen-terminated germanium surface enabled the facile etch-free dry transfer of graphene and the recycling of the germanium substrate for continual graphene growth.
SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
Jae-Hyun
JH
Lee
Eun Kyung
EK
Lee
Won-Jae
WJ
Joo
Yamujin
Y
Jang
Byung-Sung
BS
Kim
Jae Young
JY
Lim
Soon-Hyung
SH
Choi
Sung Joon
SJ
Ahn
Joung Real
JR
Ahn
Min-Ho
MH
Park
Cheol-Woong
CW
Yang
Byoung Lyong
BL
Choi
Sung-Woo
SW
Hwang
Dongmok
D
Whang