Efficient and sustained photoelectrochemical water oxidation by cobalt oxide/silicon photoanodes with nanotextured interfaces.
Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p(+)n-Si devices enables efficient photoelectrochemical water oxidation and effective protection of Si from corrosion at high pH (pH 13.6). A photocurrent density of 17 mA/cm(2) at 1.23 V vs RHE, saturation current density of 30 mA/cm(2), and photovoltage greater than 600 mV were achieved under simulated solar illumination. Sustained photoelectrochemical water oxidation was observed with no detectable degradation after 24 h. Enhanced performance of the nanotextured structure, compared to planar Si, is attributed to a reduced silicon oxide thickness that provides more intimate interfacial contact between the light absorber and catalyst. This work highlights a general approach to improve the performance and stability of Si photoelectrodes by engineering the catalyst/semiconductor interface.
Joint Center for Artificial Photosynthesis (JCAP), Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Jinhui
J
Yang
Karl
K
Walczak
Eitan
E
Anzenberg
Francesca M
FM
Toma
Guangbi
G
Yuan
Jeffrey
J
Beeman
Adam
A
Schwartzberg
Yongjing
Y
Lin
Mark
M
Hettick
Ali
A
Javey
Joel W
JW
Ager
Junko
J
Yano
Heinz
H
Frei
Ian D
ID
Sharp
D002384:Catalysis; D003035:Cobalt / Q000737:chemistry*; D004566:Electrodes; D049329:Nanostructures / Q000737:chemistry*; D010084:Oxidation-Reduction; D010087:Oxides / Q000737:chemistry*; D055668:Photochemical Processes; D012825:Silicon / Q000737:chemistry*; D014867:Water / Q000737:chemistry*
D010087:Oxides; D014867:Water; D003035:Cobalt; C060728:cobalt oxide; D012825:Silicon