High isolation single-pole four-throw RF MEMS switch based on series-shunt configuration.
This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm(2). The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.
Department of Electronics and Communication Engineering, Lovely Professional University, Phagwara 144 402, India.
Tejinder
0000-0002-5870-6204
T
Singh
Department of Electronics and Communication Engineering, Lovely Professional University, Phagwara 144 402, India.
Navjot
N
Khaira
D004867:Equipment Design; D055617:Micro-Electrical-Mechanical Systems