Multilevel nonvolatile flexible organic field-effect transistor memories employing polyimide electrets with different charge-transfer effects.
The electrical memory characteristics of the n-channel organic field-effect transistors (OFETs) employing diverse polyimide (PI) electrets are reported. The synthesized PIs comprise identical electron donor and three different building blocks with gradually increasing electron-accepting ability. The distinct charge-transfer capabilities of these PIs result in varied type of memory behaviors from the write-one-read-many (WORM) to flash type. Finally, a prominent flexible WORM-type transistor memory is demonstrated and shows not only promising write-many-read-many (WMRM) multilevel data storage but also excellent mechanical and retention stability.
Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan.
An-Dih
AD
Yu
Wei-Yao
WY
Tung
Yu-Cheng
YC
Chiu
Chu-Chen
CC
Chueh
Guey-Sheng
GS
Liou
Wen-Chang
WC
Chen
D055664:Electrochemical Techniques; D011789:Quantum Theory; D012117:Resins, Synthetic / Q000138:chemical synthesis / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry; D014173:Transistors, Electronic
D012117:Resins, Synthetic; C029945:polyimide resin; D012822:Silicon Dioxide
electrets; organic memory; polyimide; transistor