Spectroscopic proof of the correlation between redox-state and charge-carrier transport at the interface of resistively switching Ti/PCMO devices.
By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr₀.₄₈ Ca₀.₅₂ MnO₃ (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.
Peter Grünberg Institute, Research Center Jülich, 52425, Germany.
Anja
A
Herpers
Christian
C
Lenser
Chanwoo
C
Park
Francesco
F
Offi
Francesco
F
Borgatti
Giancarlo
G
Panaccione
Stephan
S
Menzel
Rainer
R
Waser
Regina
R
Dittmann
HAXPES; PCMO; RRAM; redox-reaction; resistive switching