Designing p-type semiconductor-metal hybrid structures for improved photocatalysis.
A practical strategy is proposed to facilitate the migration of holes in semiconductor (the low rate of which limits photocatalytic efficiency) by taking advantage of the Schottky barrier between p-type semiconductor and metal. A high work function is found to serve as an important selection rule for building such desirable Schottky junction between semiconductor surface facets and metal. The intrinsic charge spatial distribution has to be taken into account when selecting the facets, as it results in accumulation of photoexcited electrons and holes on certain semiconductor facets. Importantly, the facets have a high work function, the same characteristic required for the formation of Schottky junction in a p-type semiconductor-metal hybrid structure. As a result, the semiconductor crystals in the hybrid design may be better enclosed by single facets with high work function, so as to synergize the two effects: Schottky barrier versus charge spatial separation.
Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials, and School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, Anhui 230026 (P. R. China) http://staff.ustc.edu.cn/∼yjxiong/
Lili
L
Wang
Jing
J
Ge
Ailun
A
Wang
Mingsen
M
Deng
Xijun
X
Wang
Song
S
Bai
Rui
R
Li
Jun
J
Jiang
Qun
Q
Zhang
Yi
Y
Luo
Yujie
Y
Xiong
charge spatial separation; photocatalysis; schottky junction; semiconductor-metal hybrid; surface facet