title: Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure.
abstract: A compact nonvolatile programmable switch (NVPS) using 90 nm CMOS technology together with perpendicular magnetic tunnel junction (p-MTJ) devices is fabricated for zero-standby-power field-programmable gate array. Because routing information does not change once it is programmed into an NVPS, high-speed read and write accesses are not required and a write-control transistor can be shared among all the NVPSs, which greatly simplifies structure of the NVPS. In fact, the effective area of the proposed NVPS is reduced by 40% compared to that of a conventional MTJ-based NVPS. The instant on/off behavior without external nonvolatile memory access is also demonstrated using the fabricated test chip.
authors.forename: D
authors.initials: D
authors.lastname: Suzuki
authors.forename: M
authors.initials: M
authors.lastname: Natsui
authors.forename: A
authors.initials: A
authors.lastname: Mochizuki
authors.forename: S
authors.initials: S
authors.lastname: Miura
authors.forename: H
authors.initials: H
authors.lastname: Honjo
authors.forename: K
authors.initials: K
authors.lastname: Kinoshita
authors.forename: S
authors.initials: S
authors.lastname: Fukami
authors.forename: H
authors.initials: H
authors.lastname: Sato
authors.forename: S
authors.initials: S
authors.lastname: Ikeda
authors.forename: T
authors.initials: T
authors.lastname: Endoh
authors.forename: H
authors.initials: H
authors.lastname: Ohno
authors.forename: T
authors.initials: T
authors.lastname: Hanyu
references.citation: Nat Mater. 2010 Sep;9(9):721-4
references.pmid: 20622862
references.citation: J Appl Phys. 2014 May 7;115(17):17B742
references.pmid: 24753634