title: Photoinduced doping in heterostructures of graphene and boron nitride.
abstract: The design of stacks of layered materials in which adjacent layers interact by van der Waals forces has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties as well as the emergence of novel physical phenomena and device functionality. Here, we report photoinduced doping in van der Waals heterostructures consisting of graphene and boron nitride layers. It enables flexible and repeatable writing and erasing of charge doping in graphene with visible light. We demonstrate that this photoinduced doping maintains the high carrier mobility of the graphene/boron nitride heterostructure, thus resembling the modulation doping technique used in semiconductor heterojunctions, and can be used to generate spatially varying doping profiles such as p-n junctions. We show that this photoinduced doping arises from microscopically coupled optical and electrical responses of graphene/boron nitride heterostructures, including optical excitation of defect transitions in boron nitride, electrical transport in graphene, and charge transfer between boron nitride and graphene.
authors.affiliation: 1] Department of Physics, University of California, Berkeley, California 94720, USA [2].
authors.forename: L
authors.initials: L
authors.lastname: Ju
authors.affiliation: 1] Department of Physics, University of California, Berkeley, California 94720, USA [2].
authors.forename: J
authors.initials: J
authors.lastname: Velasco
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: E
authors.initials: E
authors.lastname: Huang
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: S
authors.initials: S
authors.lastname: Kahn
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: C
authors.initials: C
authors.lastname: Nosiglia
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: Hsin-Zon
authors.initials: HZ
authors.lastname: Tsai
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: W
authors.initials: W
authors.lastname: Yang
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Taniguchi
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Y
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: G
authors.initials: G
authors.lastname: Zhang
authors.affiliation: 1] Department of Physics, University of California, Berkeley, California 94720, USA [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA [3] Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA.
authors.forename: M
authors.initials: M
authors.lastname: Crommie
authors.affiliation: 1] Department of Physics, University of California, Berkeley, California 94720, USA [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA [3] Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA.
authors.forename: A
authors.initials: A
authors.lastname: Zettl
authors.affiliation: 1] Department of Physics, University of California, Berkeley, California 94720, USA [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA [3] Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA.
authors.forename: F
authors.initials: F
authors.lastname: Wang
references.citation: Sci Rep. 2013;3:2355
references.pmid: 23912707
references.citation: Nature. 2013 May 30;497(7451):598-602
references.pmid: 23676673
references.citation: Nat Mater. 2011 Apr;10(4):282-5
references.pmid: 21317900
references.citation: Nat Mater. 2007 Sep;6(9):652-5
references.pmid: 17660825
references.citation: Science. 2013 Jun 21;340(6139):1427-30
references.pmid: 23686343
references.citation: ACS Nano. 2013 Jul 23;7(7):5850-7
references.pmid: 23782162
references.citation: Nature. 2005 Nov 10;438(7065):201-4
references.pmid: 16281031
references.citation: Nature. 2013 May 30;497(7451):594-7
references.pmid: 23676678
references.citation: Science. 2013 Jun 14;340(6138):1311-4
references.pmid: 23641062
references.citation: Phys Rev Lett. 2011 Nov 11;107(20):206601
references.pmid: 22181752
references.citation: Nano Lett. 2009 May;9(5):1973-9
references.pmid: 19361173
references.citation: Nat Nanotechnol. 2010 Oct;5(10):722-6
references.pmid: 20729834
references.citation: Phys Rev Lett. 2007 Jun 8;98(23):236803
references.pmid: 17677928
references.citation: Nature. 2013 Jul 25;499(7459):419-25
references.pmid: 23887427
references.citation: Science. 2004 Oct 22;306(5696):666-9
references.pmid: 15499015
references.citation: Phys Rev Lett. 2007 May 4;98(18):186806
references.pmid: 17501596
references.citation: Nat Mater. 2013 Sep;12(9):792-7
references.pmid: 23852399
references.citation: Nano Lett. 2011 Jun 8;11(6):2291-5
references.pmid: 21553853
references.citation: Science. 2007 Aug 3;317(5838):638-41
references.pmid: 17600183
references.citation: Phys Rev Lett. 2007 Oct 19;99(16):166804
references.pmid: 17995279