title: Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.
authors.affiliation: Department of Materials Science and Engineering, University of California Los Angeles, CA, 90095, USA.
authors.forename: You Seung
authors.initials: YS
authors.lastname: Rim
authors.forename: Huajun
authors.initials: H
authors.lastname: Chen
authors.forename: Xiaolu
authors.initials: X
authors.lastname: Kou
authors.forename: Hsin-Sheng
authors.initials: HS
authors.lastname: Duan
authors.forename: Huanping
authors.initials: H
authors.lastname: Zhou
authors.forename: Min
authors.initials: M
authors.lastname: Cai
authors.forename: Hyun Jae
authors.initials: HJ
authors.lastname: Kim
authors.forename: Yang
authors.initials: Y
authors.lastname: Yang
keywords: oxide semiconductor; solution-process; structural properties; thin-film transistor