title: High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.
abstract: We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.
authors.affiliation: Department of Physics, Institute of Basic Science, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea. djkang@skku.edu.
authors.forename: Ngoc Huynh
authors.initials: NH
authors.lastname: Van
authors.forename: Jae-Hyun
authors.initials: JH
authors.lastname: Lee
authors.forename: Jung Inn
authors.initials: JI
authors.lastname: Sohn
authors.forename: Seung Nam
authors.initials: SN
authors.lastname: Cha
authors.forename: Dongmok
authors.initials: D
authors.lastname: Whang
authors.forename: Jong Min
authors.initials: JM
authors.lastname: Kim
authors.forename: Dae Joon
authors.initials: DJ
authors.lastname: Kang