title: A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications.
abstract: Crossbar arrays are the most promising application of a resistive random access memory (RRAM) device for achieving high density memory. However, cross-talk interference in the crossbar array limits the increase in the integration density. In this paper, the combination of two anti-parallel connected diodes and a bipolar RRAM cell is proposed to suppress the sneak current in a crossbar array with anti-parallel connected diodes as the selector for the bipolar RRAM. By using the anti-parallel connected diodes as a selector, the sneak current can be effectively suppressed and the high density crossbar array of more than 1 Mb can be realized as estimated by the 1/2V read voltage scheme. These results indicate that anti-parallel connected diodes can be used as a bipolar selector and have great potential for high density bipolar RRAM crossbar array applications.
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, People's Republic of China. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China.
authors.forename: Yingtao
authors.initials: Y
authors.lastname: Li
authors.forename: Qingchun
authors.initials: Q
authors.lastname: Gong
authors.forename: Rongrong
authors.initials: R
authors.lastname: Li
authors.forename: Xinyu
authors.initials: X
authors.lastname: Jiang
mesh_terms: D016248:Computer Storage Devices; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D006801:Humans