title: The crystal orientation relation and macroscopic surface roughness in hetero-epitaxial graphene grown on Cu/mica.
abstract: Clean, flat and orientation-identified graphene on a substrate is in high demand for graphene electronics. In this study, the hetero-epitaxial graphene growth on Cu(111)/mica(001) by chemical vapor deposition is investigated to check the applicability for top-gate insulator research on graphene, as well as graphene channel research, by transferring graphene on to SiO2/Si substrates. After adjusting the graphene growth conditions, the surface roughness of the graphene/Cu/mica substrate and the average smoothed areas are ∼0.34 nm and ∼100 μm(2), respectively. The orientation of graphene in the graphene/Cu/mica substrate can be identified by the hexagonal void morphology of Cu. Moreover, we demonstrate a relatively high mobility of ∼4500 cm(2) V(-1) s(-1) in graphene transferred on the SiO2/Si substrate. These results suggest that the present graphene/Cu/mica substrate can be used for top-gate insulator research on graphene.
authors.affiliation: State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, People's Republic of China. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: J L
authors.initials: JL
authors.lastname: Qi
authors.forename: K
authors.initials: K
authors.lastname: Nagashio
authors.forename: T
authors.initials: T
authors.lastname: Nishimura
authors.forename: A
authors.initials: A
authors.lastname: Toriumi