title: Inverted process for graphene integrated circuits fabrication.
abstract: CMOS compatible 200 mm two-layer-routing technology is employed to fabricate graphene field-effect transistors (GFETs) and monolithic graphene ICs. The process is inverse to traditional Si technology. Passive elements are fabricated in the first metal layer and GFETs are formed with buried gate/source/drain in the second metal layer. Gate dielectric of 3.1 nm in equivalent oxide thickness (EOT) is employed. 500 nm-gate-length GFETs feature a yield of 80% and fT/fmax = 17 GHz/15.2 GHz RF performance. A high-performance monolithic graphene frequency multiplier is demonstrated using the proposed process. Functionality was demonstrated up to 8 GHz input and 16 GHz output. The frequency multiplier features a 3 dB bandwidth of 4 GHz and conversion gain of -26 dB.
authors.affiliation: Institute of Microelectronics, Tsinghua University, Haidian District, Beijing, 100084, China. wuhq@tsinghua.com.
authors.forename: Hongming
authors.initials: H
authors.lastname: Lv
authors.forename: Huaqiang
authors.initials: H
authors.lastname: Wu
authors.forename: Jinbiao
authors.initials: J
authors.lastname: Liu
authors.forename: Can
authors.initials: C
authors.lastname: Huang
authors.forename: Junfeng
authors.initials: J
authors.lastname: Li
authors.forename: Jiahan
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authors.lastname: Yu
authors.forename: Jiebin
authors.initials: J
authors.lastname: Niu
authors.forename: Qiuxia
authors.initials: Q
authors.lastname: Xu
authors.forename: Zhiping
authors.initials: Z
authors.lastname: Yu
authors.forename: He
authors.initials: H
authors.lastname: Qian