title: Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer.
abstract: We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350 °C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Pradipta K
authors.initials: PK
authors.lastname: Nayak
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: J A
authors.initials: JA
authors.lastname: Caraveo-Frescas
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Zhenwei
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: M N
authors.initials: MN
authors.lastname: Hedhili
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: Q X
authors.initials: QX
authors.lastname: Wang
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: H N
authors.initials: HN
authors.lastname: Alshareef
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