title: Benchtop fabrication of memristive atomic switch networks.
abstract: Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive switching circuits comprising highly interconnected fractal electrodes and metal-insulator-metal interfaces, known as atomic switch networks, have been fabricated using simple benchtop techniques including solution-phase electroless deposition. These devices are shown to activate through a bias-induced forming step that produces the frequency dependent, nonlinear hysteretic switching expected for gapless-type atomic switches and memristors. By eliminating the need for complex lithographic methods, such an approach toward device fabrication provides a more accessible platform for the study of ionic resistive switches and memristive systems.
authors.forename: Henry O
authors.initials: HO
authors.lastname: Sillin
authors.forename: Eric J
authors.initials: EJ
authors.lastname: Sandouk
authors.forename: Audrius V
authors.initials: AV
authors.lastname: Avizienis
authors.forename: Masakazu
authors.initials: M
authors.lastname: Aono
authors.forename: Adam Z
authors.initials: AZ
authors.lastname: Stieg
authors.forename: James K
authors.initials: JK
authors.lastname: Gimzewski