title: Performance degradation of c-Si solar cells under UV exposure.
abstract: Current-Voltage (I-V) and Capacitance-Voltage (C-V) characteristics of crystalline silicon solar cells were obtained under UV exposure. The solar cell parameters degraded with increasing exposure time. For example, open-circuit voltage (V(oc)), short-circuit current (J(sc)), fill-factor (FF) and efficiency (eta) were degraded. In this study, solar cell did not degrade at the p-n junction or silicon substrate effective lifetime by UltraViolet (UV) light exposure. The main degradation occurred at the SiN(x) layer, the commonly used anti-reflection coating (ARC), due to the positive charges generated by the high-energy UV light source. UV light changed the characteristics of the SiN(x) layer and the Si/SiN(x) interface to degrade the cell efficiency.
authors.forename: Hyojung
authors.initials: H
authors.lastname: Kim
authors.forename: Pyungho
authors.initials: P
authors.lastname: Choi
authors.forename: Kwangsoo
authors.initials: K
authors.lastname: Kim
authors.forename: Hyungsuk
authors.initials: H
authors.lastname: Kuh
authors.forename: Dohyun
authors.initials: D
authors.lastname: Beak
authors.forename: Jaehyung
authors.initials: J
authors.lastname: Lee
authors.forename: Junsin
authors.initials: J
authors.lastname: Yi
authors.forename: Byoungdeog
authors.initials: B
authors.lastname: Choi