title: Direct growth of high-quality graphene on high-κ dielectric SrTiO₃ substrates.
abstract: High-quality monolayer graphene was synthesized on high-κ dielectric single crystal SrTiO3 (STO) substrates by a facile metal-catalyst-free chemical vapor deposition process. The as-grown graphene sample was suitable for fabricating a high performance field-effect transistor (FET), followed by a far lower operation voltage compared to that of a SiO2-gated FET and carrier motilities of approximately 870-1050 cm(2)·V(-1)·s(-1) in air at rt. The directly grown high-quality graphene on STO makes it a perfect candidate for designing transfer-free, energy-saving, and batch production of FET arrays.
authors.affiliation: Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, P. R. China.
authors.forename: Jingyu
authors.initials: J
authors.lastname: Sun
authors.forename: Teng
authors.initials: T
authors.lastname: Gao
authors.forename: Xiuju
authors.initials: X
authors.lastname: Song
authors.forename: Yanfei
authors.initials: Y
authors.lastname: Zhao
authors.forename: Yuanwei
authors.initials: Y
authors.lastname: Lin
authors.forename: Huichao
authors.initials: H
authors.lastname: Wang
authors.forename: Donglin
authors.initials: D
authors.lastname: Ma
authors.forename: Yubin
authors.initials: Y
authors.lastname: Chen
authors.forename: Wenfeng
authors.initials: W
authors.lastname: Xiang
authors.forename: Jian
authors.initials: J
authors.lastname: Wang
authors.forename: Yanfeng
authors.initials: Y
authors.lastname: Zhang
authors.forename: Zhongfan
authors.initials: Z
authors.lastname: Liu