title: Small-dose-sensitive X-ray image pixel with HgI2 photoconductor and amorphous oxide thin-film transistor.
abstract: A new X-ray image sensor is demonstrated with an oxide thin-film transistor backplane and HgI2 sensing material. It displays outstanding image quality under a low X-ray exposure and a low electric field. It is promising as a state-of-the-art device to realize highly resolved images at a low X-ray dose for a variety of medical X-ray imaging applications.
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul, 120-749, Korea.
authors.forename: Jae Chul
authors.initials: JC
authors.lastname: Park
authors.forename: Pyo Jin
authors.initials: PJ
authors.lastname: Jeon
authors.forename: Jin Sung
authors.initials: JS
authors.lastname: Kim
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
mesh_terms: D007454:Iodides; D017669:Mercury Compounds; D010087:Oxides; D014057:Tomography, X-Ray Computed / Q000295:instrumentation*
chemical_list: D007454:Iodides; D017669:Mercury Compounds; D010087:Oxides
keywords: X-ray absorption; image sensors,photoconductive materials; thin-film transistors