title: Silicon interfacial passivation layer chemistry for high-k/InP interfaces.
abstract: The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated. The phosphorus oxides are scavenged completely from the acid-etched samples but not completely from the native oxide samples. Aluminum silicate and hafnium silicate are possibly generated upon ALD and following annealing. The thermal stability of a high-k/Si/InP (acid-etched) stack are also studied by in situ annealing to 400 and 500 °C under ultrahigh vacuum, and the aluminum oxide/Si/InP stack is the most thermally stable. An indium out-diffusion to the sample surface is observed through the Si IPL and the high-k dielectric, which may form volatile species and evaporate from the sample surface.
authors.affiliation: Department of Materials Science and Engineering, University of Texas at Dallas , Richardson, Texas 75080, United States.
authors.forename: Hong
authors.initials: H
authors.lastname: Dong
authors.forename: Wilfredo
authors.initials: W
authors.lastname: Cabrera
authors.forename: Xiaoye
authors.initials: X
authors.lastname: Qin
authors.forename: Barry
authors.initials: B
authors.lastname: Brennan
authors.forename: Dmitry
authors.initials: D
authors.lastname: Zhernokletov
authors.forename: Christopher L
authors.initials: CL
authors.lastname: Hinkle
authors.forename: Jiyoung
authors.initials: J
authors.lastname: Kim
authors.forename: Yves J
authors.initials: YJ
authors.lastname: Chabal
authors.forename: Robert M
authors.initials: RM
authors.lastname: Wallace