title: Band offsets in YSZ/InGaZnO4 heterostructure system.
abstract: The energy discontinuity in the valence band (deltaE(v)) of Y2O3-stabilized ZrO2 (YSZ)/InGaZnO4 (IGZO) heterostructures was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The YSZ exhibited a bandgap of 4.4 eV from absorption measurements. A value of deltaE(v) = 0.57 +/- 0.12 eV was obtained by using Ga 2P3/2, Zn 2p3/2 and In 3d5/2 energy levels as references. This implies a conduction band offset (deltaE(c)) of 0.63 eV in YSZ/InGaZnO4 heterostructures and a nested interface band alignment.
authors.forename: J K
authors.initials: JK
authors.lastname: Kim
authors.forename: K W
authors.initials: KW
authors.lastname: Kim
authors.forename: E A
authors.initials: EA
authors.lastname: Douglas
authors.forename: B P
authors.initials: BP
authors.lastname: Gila
authors.forename: V
authors.initials: V
authors.lastname: Craciun
authors.forename: E S
authors.initials: ES
authors.lastname: Lambers
authors.forename: D P
authors.initials: DP
authors.lastname: Norton
authors.forename: F
authors.initials: F
authors.lastname: Ren
authors.forename: S J
authors.initials: SJ
authors.lastname: Pearton
authors.forename: Hyun
authors.initials: H
authors.lastname: Cho