title: Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.
abstract: We reported resistive switching behaviors in the resistive random access memory (RRAM) devices based on the different annealing temperatures of graphene oxide (GO) film as active layers. It was found that the resistive switching characteristics of an indium tin oxide (ITO)/GO/Ag structure have a strong dependence on the annealing temperature of GO film. When the annealing temperature of the GO film was 20 °C, the devices showed typical write-once-read-many-times (WORM) type memory behaviors, which have good memory performance with a higher ON/OFF current ratio (∼10(4)), the higher the high resistance state (HRS)/low resistance state (LRS) ratio (∼10(5)) and stable retention characteristics (>10(3) s) under lower programming voltage (-1 V and -0.5 V). With the increasing annealing temperature of GO film, the resistive switching behavior of RRAM devices gradually weakened and eventually disappeared. This phenomenon could be understood by the different energy level distributions of the charge traps in GO film, and the different charge injection ability from the Ag electrode to GO film, which is caused by the different annealing temperatures of the GO film.
authors.affiliation: Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics &#38; Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts &#38;Telecommunications (NUPT), Nanjing 210 023, People's Republic of China.
authors.forename: Mingdong
authors.initials: M
authors.lastname: Yi
authors.forename: Yong
authors.initials: Y
authors.lastname: Cao
authors.forename: Haifeng
authors.initials: H
authors.lastname: Ling
authors.forename: Zhuzhu
authors.initials: Z
authors.lastname: Du
authors.forename: Laiyuan
authors.initials: L
authors.lastname: Wang
authors.forename: Tao
authors.initials: T
authors.lastname: Yang
authors.forename: Quli
authors.initials: Q
authors.lastname: Fan
authors.forename: Linghai
authors.initials: L
authors.lastname: Xie
authors.forename: Wei
authors.initials: W
authors.lastname: Huang
mesh_terms: D016248:Computer Storage Devices; D004560:Electricity; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D006108:Graphite / Q000737:chemistry*; D006801:Humans; D018625:Microscopy, Atomic Force; D013696:Temperature
chemical_list: D006108:Graphite