title: Modeling and manufacturing of a micromachined magnetic sensor using the CMOS process without any post-process.
abstract: The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA.
authors.affiliation: Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402, Taiwan. a16824795@hotmail.com.
authors.forename: Jian-Zhi
authors.initials: JZ
authors.lastname: Tseng
authors.affiliation: Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, Tamsui, 251, Taiwan. ccwu@mail.tku.edu.tw.
authors.forename: Chyan-Chyi
authors.initials: CC
authors.lastname: Wu
authors.affiliation: Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402, Taiwan. cldai@dragon.nchu.edu.tw.
authors.forename: Ching-Liang
authors.initials: CL
authors.lastname: Dai
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