title: Hydrostatic piezoelectric properties of [011] poled Pb(Mg1/3Nb2/3)O3-PbTiO3single crystals and 2-2 lamellar composites.
abstract: The hydrostatic piezoelectric properties of [011] poled Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) crystals and corresponding 2-2 crystal/epoxy composites were investigated. The crystal volume ratio and compositional dependencies of the hydrostatic charge and voltage coefficients (dhandgh) and hydrostatic figure of merit (FOM)dh×ghwere determined, where large FOM value of 3.2 pm2/N with high stability as a function of hydrostatic pressure was achieved for rhombohedral crystal composites. In addition, the stress amplification effects of the face-plate and different epoxy matrixes were investigated, with maximum FOM value being on the order of 92 pm2/N, indicating that 2-2 crystal/epoxy composites are promising materials for hydrostatic applications.
authors.affiliation: Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA ; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
authors.forename: Lili
authors.initials: L
authors.lastname: Li
authors.affiliation: Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: Shujun
authors.initials: S
authors.lastname: Zhang
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
authors.forename: Zhuo
authors.initials: Z
authors.lastname: Xu
authors.affiliation: Blatek Inc., 2820 E. College Avenue, Suite F, State College, Pennsylvania 16801, USA.
authors.forename: Xuecang
authors.initials: X
authors.lastname: Geng
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
authors.forename: Fei
authors.initials: F
authors.lastname: Wen
authors.affiliation: TRS Technologies Inc., 2820 E. College Avenue, Suite J, State College, Pennsylvania 16801, USA.
authors.forename: Jun
authors.initials: J
authors.lastname: Luo
authors.affiliation: Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: Thomas R
authors.initials: TR
authors.lastname: Shrout
references.citation: J Appl Phys. 2012 Dec 15;112(12):124113
references.pmid: 23341689
references.citation: IEEE Trans Ultrason Ferroelectr Freq Control. 1993;40(2):103-9
references.pmid: 18263162
references.citation: J Appl Phys. 2010 Aug 1;108(3):
references.pmid: 20806001
references.citation: IEEE Trans Ultrason Ferroelectr Freq Control. 2005 May;52(5):746-75
references.pmid: 16048177
references.citation: IEEE Trans Ultrason Ferroelectr Freq Control. 2013 Aug;60(8):1572-80
references.pmid: 25004527
references.citation: Sensors (Basel). 2013 Dec 20;14(1):144-69
references.pmid: 24361928
references.citation: IEEE Trans Ultrason Ferroelectr Freq Control. 1993;40(1):41-9
references.pmid: 18263155
references.citation: Appl Phys Lett. 2010 Jul 19;97(3):
references.pmid: 20714370