title: Purely electronic switching with high uniformity, resistance tunability, and good retention in Pt-dispersed SiO2 thin films for ReRAM.
abstract: Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.
authors.affiliation: Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.
authors.forename: Byung Joon
authors.initials: BJ
authors.lastname: Choi
authors.forename: Albert B K
authors.initials: AB
authors.lastname: Chen
authors.forename: Xiang
authors.initials: X
authors.lastname: Yang
authors.forename: I-Wei
authors.initials: IW
authors.lastname: Chen
keywords: charge transport; data storage; electronic processes; electronic structures; hybrid materials; thin films