title: Confinement of ferroelectric domain-wall motion at artificially formed conducting-nanofilaments in epitaxial BiFeO3 thin films.
abstract: We report confinement of ferroelectric domain-wall motion at conducting-nanofilament wall in epitaxial BiFeO3 thin film on Nb-doped SrTiO3 substrate. The BiFeO3 film exhibited well-defined ferroelectric response and unipolar resistive switching behavior. We artificially formed conducting-nanofilaments in the BiFeO3 via conducting atomic force microscope techniques. The conducting-nanofilament wall, which does not possess any ferroelectric polarization, is then able to block domain propagation. Consequently, we demonstrate that the domain-wall motion is effectively confined within the conducting-nanofilament wall during polarization switching. This significant new insight potentially gives an opportunity for the artificial manipulation of nanoscale ferroelectric domain.
authors.affiliation: Department of Chemical Engineering, Stanford University , 381 North-South Mall, Stanford, California 94305, United States.
authors.forename: Woo-Hee
authors.initials: WH
authors.lastname: Kim
authors.forename: Jong Yeog
authors.initials: JY
authors.lastname: Son
authors.forename: Hyun Myung
authors.initials: HM
authors.lastname: Jang