Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches.
Characteristics of a silicon-carbide (SiC) photoconductive switch under different illumination profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral geometry using a laser beam of 532-nm wavelength. Photoconductivity tests for different spot profiles and locations show that such switches achieve a minimum on-state resistance when the switching gap is illuminated. The differences between on-state resistances are small for various partial illuminations of the switching gap. Semiconductor modeling is used to simulate the electric field and current profiles for different partial illuminations. The simulation results show poor on-state switch performance when partially illuminated. Based on these results, a more revealing circuit model for the switch matches well with experimental results for partial illuminations.
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, People's Republic of China.
Langning
L
Wang
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, People's Republic of China.
Tao
T
Xun
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, People's Republic of China.
Hanwu
H
Yang
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, People's Republic of China.
Jinliang
J
Liu
College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, People's Republic of China.
Yu
Y
Zhang