Highly stable carbon nanotube top-gate transistors with tunable threshold voltage.
Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors are observed when P(VDF-TrFE-CTFE) is utilized as a topgate dielectric. Furthermore, continuous tuning of the threshold voltages of both unipolar and ambipolar SWNT thin-film transistors (TFTs) is demonstrated for the first time.
Department of Materials Science & Engineering, Department of Chemical Engineering, Stanford University, Stanford, CA, 94305.
Huiliang
H
Wang
Brian
B
Cobb
Albert
A
van Breemen
Gerwin
G
Gelinck
Zhenan
Z
Bao
carbon nanotubes; stable; thin film transistors; threshold voltage