Improvement of Al2O3 films on graphene grown by atomic layer deposition with pre-H2O treatment.
We improve the surface of graphene by atomic layer deposition (ALD) without the assistance of a transition layer or surface functionalization. By controlling gas-solid physical adsorption between water molecules and graphene through the optimization of pre-H2O treatment and two-step temperature growth, we directly grew uniform and compact Al2O3 films onto graphene by ALD. Al2O3 films, deposited with 4-cycle pre-H2O treatment and 100-200 °C two-step growing process, presented a relative permittivity of 7.2 and a breakdown critical electrical field of 9 MV/cm. Moreover, the deposition of Al2O3 did not introduce any detective defects or disorders in graphene.
State Key Laboratory of Functional Materials for Informatics, SIMIT, Chinese Academy of Sciences , Shanghai 200050, China.
Li
L
Zheng
Xinhong
X
Cheng
Duo
D
Cao
Gang
G
Wang
Zhongjian
Z
Wang
Dawei
D
Xu
Chao
C
Xia
Lingyan
L
Shen
Yuehui
Y
Yu
Dashen
D
Shen