Current-driven domain wall depinning from an anisotropy boundary in nanowires.
The interaction of a current-driven domain wall with an anisotropy boundary in nanowires with perpendicular magnetic anisotropy is investigated. A local reduction of the anisotropy constant is used to create an artificial boundary where the domain wall gets pinned. Micromagnetic simulations and analytical calculations, based on a one-dimensional model, are employed to describe the interaction of the domain wall and the anisotropy boundary and to determine the depinning current densities. Two different pinning regimes-an intrinsic and an extrinsic-can be identified in dependence with the characteristic of the boundary. A very good agreement between simulated and analytically obtained data is achieved.
Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstraße 11, D-20355 Hamburg, Germany.
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T
Gerhardt
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A
Drews
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G
Meier
D016880:Anisotropy; D003198:Computer Simulation; D004553:Electric Conductivity; D004574:Electromagnetic Fields; D008956:Models, Chemical; D008958:Models, Molecular; D053770:Nanowires / Q000737:chemistry* / Q000648:ultrastructure*