Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film.
We report ultraviolet electroluminescence from a hetero p-n junction between a single ZnO microsphere and p-GaN thin film. ZnO microspheres, which have high crystalline quality, have been synthesized by ablating a ZnO sintered target. It was found that synthesized ZnO microspheres had a high-optical property and exhibit the laser action in the whispering gallery mode under pulsed optical pumping. A hetero p-n junction was formed between the single ZnO microsphere/ p-GaN thin film, and a good rectifying property with a turn-on voltage of approximately 6 V was observed in I-V characteristic across the junction. Ultraviolet and visible electroluminescence were observed under forward bias.
Norihiro
N
Tetsuyama
Koshi
K
Fusazaki
Yasuaki
Y
Mizokami
Tetsuya
T
Shimogaki
Mitsuhiro
M
Higashihata
Daisuke
D
Nakamura
Tatsuo
T
Okada