Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations.
Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.
Department of Electrical Engineering, Stanford University, 420 Via Palou, Stanford, CA 94305-4070, USA. nishiy@stanford.edu.
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Zhao
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Chen
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Wu
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Jiang
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Yu
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Hou
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Wong
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Nishi