title: Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: from controllable growth to material characterization.
abstract: A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100 °C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ~12 nm at growth temperature of 1000 °C to ~32 nm at growth temperature of 1100 °C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
authors.forename: Wen-Chun
authors.initials: WC
authors.lastname: Yen
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
authors.forename: Yu-Ze
authors.initials: YZ
authors.lastname: Chen
authors.affiliation: Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
authors.forename: Chao-Hui
authors.initials: CH
authors.lastname: Yeh
authors.affiliation: Department of Electrical Engineering, and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan.
authors.forename: Jr-Hau
authors.initials: JH
authors.lastname: He
authors.affiliation: Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
authors.forename: Po-Wen
authors.initials: PW
authors.lastname: Chiu
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh