title: Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments.
abstract: MoOx shows promising potential as an efficient hole injection layer for p-FETs based on transition metal dichalcogenides. A combination of experiment and theory is used to study the surface and interfacial chemistry, as well as the band alignments for MoOx/MoS2 and MoOx/WSe2 heterostructures, using photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory. A Mo(5+) rich interface region is identified and is proposed to explain the similar low hole Schottky barriers reported in a recent device study utilizing MoOx contacts on MoS2 and WSe2.
authors.affiliation: Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States .
authors.forename: Stephen
authors.initials: S
authors.lastname: McDonnell
authors.forename: Angelica
authors.initials: A
authors.lastname: Azcatl
authors.forename: Rafik
authors.initials: R
authors.lastname: Addou
authors.forename: Cheng
authors.initials: C
authors.lastname: Gong
authors.forename: Corsin
authors.initials: C
authors.lastname: Battaglia
authors.forename: Steven
authors.initials: S
authors.lastname: Chuang
authors.forename: Kyeongjae
authors.initials: K
authors.lastname: Cho
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
authors.forename: Robert M
authors.initials: RM
authors.lastname: Wallace