title: Bipolar resistance switching in transparent ITO/LaAlO₃/SrTiO₃ memristors.
abstract: We report reversible bipolar resistance switching behaviors in transparent indium-tin oxide (ITO)/LaAlO3/SrTiO3 memristors at room temperature. The memristors exhibit high optical transparency, long retention, and excellent antifatigue characteristics. The high performances are promising for employing ITO/LaAlO3/SrTiO3 memristors in nonvolatile transparent memory and logic devices. The nonvolatile resistance switching behaviors could be attributed to the migration of positively charged oxygen vacancies from the SrTiO3 substrate to the LaAlO3 film, resulting in Poole-Frenkel emission for the low resistance state and thermionic emission for the high resistance state.
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University , Guangzhou 510275, China.
authors.forename: Shuxiang
authors.initials: S
authors.lastname: Wu
authors.forename: Lizhu
authors.initials: L
authors.lastname: Ren
authors.forename: Jian
authors.initials: J
authors.lastname: Qing
authors.forename: Fengmei
authors.initials: F
authors.lastname: Yu
authors.forename: Kungan
authors.initials: K
authors.lastname: Yang
authors.forename: Mei
authors.initials: M
authors.lastname: Yang
authors.forename: Yunjia
authors.initials: Y
authors.lastname: Wang
authors.forename: Meng
authors.initials: M
authors.lastname: Meng
authors.forename: Wenqi
authors.initials: W
authors.lastname: Zhou
authors.forename: Xiang
authors.initials: X
authors.lastname: Zhou
authors.forename: Shuwei
authors.initials: S
authors.lastname: Li