title: Molecular composition, grafting density and film area affect the swelling-induced Au-S bond breakage.
abstract: In previous studies, we reported the first observation of the Au-S bond breakage induced mechanically by the swelling of the surface-tethered weak polyelectrolyte brushes in phosphate buffered saline (PBS), a phenomenon with broad applications in the fields of biosensors and functional surfaces. In this study, three factors, namely the molecular composition, grafting density and film area of the weak polyelectrolyte, carboxylated poly(oligo(ethylene glycol) methacrylate-random-2-hydroxyethyl methacrylate) (poly(OEGMA-r-HEMA)), were studied systematically on how they affected the swelling-induced Au-S bond breakage (ABB). The results showed that, first, the swelling-induced ABB is applicable to a range of molecular compositions and grafting densities; but the critical thickness (Tcritical,dry) varied with both of the two factors. An analysis on the swelling ratio further revealed that the difference in the Tcritical,dry arose from the difference in the swelling ability. A film needed to swell to ∼250 nm to induce ABB regardless of its composition or structure, thus a higher swelling ratio would lead to a lower Tcritical,dry value. Then, the impact of the film area was studied in micrometer- and sub-micrometer-scale brush patterns, which showed that only partial, rather than complete ABB was induced in these microscopic films, resulting in buckling instead of film detaching. These results demonstrated that the ABB is suitable to be used in the design of biosensors, stimulus-responsive materials and mechanochemical devices. Although the >160 μm(2) required area for uniform ABB hinders the application of ABB in nanolithography, the irreversible buckling provides a facile method of generating rough surfaces.
authors.affiliation: Division of Nanobiomedicine, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, People's Republic of China.
authors.forename: Bei'er
authors.initials: B
authors.lastname: Lv
authors.forename: Yitian
authors.initials: Y
authors.lastname: Zhou
authors.forename: Wenli
authors.initials: W
authors.lastname: Cha
authors.forename: Yuanzi
authors.initials: Y
authors.lastname: Wu
authors.forename: Jinxing
authors.initials: J
authors.lastname: Hu
authors.forename: Liqiang
authors.initials: L
authors.lastname: Li
authors.forename: Lifeng
authors.initials: L
authors.lastname: Chi
authors.forename: Hongwei
authors.initials: H
authors.lastname: Ma