title: Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems.
abstract: Nanoscale inorganic electronic synapses or synaptic devices, which are capable of emulating the functions of biological synapses of brain neuronal systems, are regarded as the basic building blocks for beyond-Von Neumann computing architecture, combining information storage and processing. Here, we demonstrate a Ag/AgInSbTe/Ag structure for chalcogenide memristor-based electronic synapses. The memristive characteristics with reproducible gradual resistance tuning are utilised to mimic the activity-dependent synaptic plasticity that serves as the basis of memory and learning. Bidirectional long-term Hebbian plasticity modulation is implemented by the coactivity of pre- and postsynaptic spikes, and the sign and degree are affected by assorted factors including the temporal difference, spike rate and voltage. Moreover, synaptic saturation is observed to be an adjustment of Hebbian rules to stabilise the growth of synaptic weights. Our results may contribute to the development of highly functional plastic electronic synapses and the further construction of next-generation parallel neuromorphic computing architecture.
authors.affiliation: 1] Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China [2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China [3].
authors.forename: Yi
authors.initials: Y
authors.lastname: Li
authors.affiliation: 1] Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China [2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China [3].
authors.forename: Yingpeng
authors.initials: Y
authors.lastname: Zhong
authors.affiliation: 1] Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China [2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
authors.forename: Jinjian
authors.initials: J
authors.lastname: Zhang
authors.affiliation: 1] Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China [2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Xu
authors.affiliation: 1] Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China [2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Wang
authors.affiliation: 1] Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China [2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
authors.forename: Huajun
authors.initials: H
authors.lastname: Sun
authors.affiliation: 1] Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China [2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Tong
authors.affiliation: 1] Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China [2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Cheng
authors.affiliation: 1] Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China [2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China [3] Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China.
authors.forename: Xiangshui
authors.initials: X
authors.lastname: Miao
mesh_terms: D032701:Biomimetics; D004553:Electric Conductivity; D054351:Electrical Synapses; D004581:Electronics / Q000295:instrumentation*; D009473:Neuronal Plasticity