title: Bias-polarity dependent ultraviolet/visible switchable light-emitting devices.
abstract: By taking semiconductors with different band-gap energies as the active layers and controlling the electron-hole recombination region through the electric field, bias-polarity dependent ultraviolet/visible switchable light-emitting devices have been realized in Au/MgO/Mg0.49Zn0.51O/MgxZn1-xO/n-ZnO structures, of which the emission bands can be switched from the ultraviolet region to the orange region by changing the polarity of the applied bias. The results reported here may provide a feasible idea to multicolor-switchable light-emitting devices.
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China.
authors.forename: Pei-Nan
authors.initials: PN
authors.lastname: Ni
authors.forename: Chong-Xin
authors.initials: CX
authors.lastname: Shan
authors.forename: Bing-Hui
authors.initials: BH
authors.lastname: Li
authors.forename: Shuang-Peng
authors.initials: SP
authors.lastname: Wang
authors.forename: De-Zhen
authors.initials: DZ
authors.lastname: Shen