title: Sensitivity enhancement of Si nanowire field effect transistor biosensors using single trap phenomena.
abstract: Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.
authors.affiliation: Peter Grünberg Institute(PGI-8), Forschungszentrum Jülich , Jülich 52425, Germany.
authors.forename: Jing
authors.initials: J
authors.lastname: Li
authors.forename: Sergii
authors.initials: S
authors.lastname: Pud
authors.forename: Michail
authors.initials: M
authors.lastname: Petrychuk
authors.forename: Andreas
authors.initials: A
authors.lastname: Offenhäusser
authors.forename: Svetlana
authors.initials: S
authors.lastname: Vitusevich
mesh_terms: D015374:Biosensing Techniques / Q000295:instrumentation* / Q000379:methods*; D053770:Nanowires; D014173:Transistors, Electronic