title: Quantum strain sensor with a topological insulator HgTe quantum dot.
abstract: We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band k · p Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian.
authors.affiliation: Quantum Theory Group, Security and Disruptive Technologies Portfolio, Emerging Technologies Division, National Research Council, Ottawa, Canada K1A 0R6.
authors.forename: Marek
authors.initials: M
authors.lastname: Korkusinski
authors.affiliation: Quantum Theory Group, Security and Disruptive Technologies Portfolio, Emerging Technologies Division, National Research Council, Ottawa, Canada K1A 0R6.
authors.forename: Pawel
authors.initials: P
authors.lastname: Hawrylak