title: Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films.
abstract: Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications.
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China.
authors.forename: Yanda
authors.initials: Y
authors.lastname: Ji
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China.
authors.forename: Yin
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China.
authors.forename: Min
authors.initials: M
authors.lastname: Gao
authors.affiliation: The Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, P. R. China.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Yuan
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China.
authors.forename: Yudong
authors.initials: Y
authors.lastname: Xia
authors.affiliation: The Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, P. R. China.
authors.forename: Changqing
authors.initials: C
authors.lastname: Jin
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China.
authors.forename: Bowan
authors.initials: B
authors.lastname: Tao
authors.affiliation: Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA.
authors.forename: Chonglin
authors.initials: C
authors.lastname: Chen
authors.affiliation: Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
authors.forename: Quanxi
authors.initials: Q
authors.lastname: Jia
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Lin