title: High-performance solution-processable N-shaped organic semiconducting materials with stabilized crystal phase.
abstract: N-shaped organic semiconductors are synthesized via four steps from a readily available starting material. Such semiconductors exhibit preferable ionization potential for p-type operation, thermally stable crystalline phase over 200 °C, and high carrier mobility up to 16 cm(2) V(-1) s(-1) (12.1 cm(2) V(-1) s(-1) on average) with small threshold voltages in solution-crystallized field-effect transistors.
authors.affiliation: Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
authors.forename: Chikahiko
authors.initials: C
authors.lastname: Mitsui
authors.forename: Toshihiro
authors.initials: T
authors.lastname: Okamoto
authors.forename: Masakazu
authors.initials: M
authors.lastname: Yamagishi
authors.forename: Junto
authors.initials: J
authors.lastname: Tsurumi
authors.forename: Kazumi
authors.initials: K
authors.lastname: Yoshimoto
authors.forename: Katsumasa
authors.initials: K
authors.lastname: Nakahara
authors.forename: Junshi
authors.initials: J
authors.lastname: Soeda
authors.forename: Yuri
authors.initials: Y
authors.lastname: Hirose
authors.forename: Hiroyasu
authors.initials: H
authors.lastname: Sato
authors.forename: Akihito
authors.initials: A
authors.lastname: Yamano
authors.forename: Takafumi
authors.initials: T
authors.lastname: Uemura
authors.forename: Jun
authors.initials: J
authors.lastname: Takeya
keywords: Hall effect; high mobility; organic semiconductors; solution-crystallized film; stabilized crystal phase