title: Hole spin coherence in a Ge/Si heterostructure nanowire.
abstract: Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2* 0.18 μs exceeds corresponding measurements in III–V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
authors.affiliation: Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen , 2100 Copenhagen, Denmark.
authors.forename: A P
authors.initials: AP
authors.lastname: Higginbotham
authors.forename: T W
authors.initials: TW
authors.lastname: Larsen
authors.forename: J
authors.initials: J
authors.lastname: Yao
authors.forename: H
authors.initials: H
authors.lastname: Yan
authors.forename: C M
authors.initials: CM
authors.lastname: Lieber
authors.forename: C M
authors.initials: CM
authors.lastname: Marcus
authors.forename: F
authors.initials: F
authors.lastname: Kuemmeth