title: Scalable growth of high-quality polycrystalline MoS(2) monolayers on SiO(2) with tunable grain sizes.
abstract: We report a scalable growth of monolayer MoS2 films on SiO2 substrates by chemical vapor deposition. As-grown polycrystalline MoS2 films are continuous over the entire substrate surface with a tunable grain size from ∼20 nm up to ∼1 μm. An obvious blue-shift (up to 80 meV) of photoluminescence peaks was observed from a series samples with different grain sizes. Back-gated field effect transistors based on a polycrystalline MoS2 film with a typical grain size of ∼600 nm shows a field mobility of ∼7 cm(2)/(V s) and on/off ratio of ∼10(6), comparable to those achieved from exfoliated MoS2. Our work provides a route toward scaled-up synthesis of high-quality monolayer MoS2 for electronic and optoelectronic devices.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Zhang
authors.forename: Hua
authors.initials: H
authors.lastname: Yu
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.forename: Xuezeng
authors.initials: X
authors.lastname: Tian
authors.forename: Donghua
authors.initials: D
authors.lastname: Liu
authors.forename: Meng
authors.initials: M
authors.lastname: Cheng
authors.forename: Guibai
authors.initials: G
authors.lastname: Xie
authors.forename: Wei
authors.initials: W
authors.lastname: Yang
authors.forename: Rong
authors.initials: R
authors.lastname: Yang
authors.forename: Xuedong
authors.initials: X
authors.lastname: Bai
authors.forename: Dongxia
authors.initials: D
authors.lastname: Shi
authors.forename: Guangyu
authors.initials: G
authors.lastname: Zhang