title: Strain imaging of nanoscale semiconductor heterostructures with x-ray Bragg projection ptychography.
abstract: We report the imaging of nanoscale distributions of lattice strain and rotation in complementary components of lithographically engineered epitaxial thin film semiconductor heterostructures using synchrotron x-ray Bragg projection ptychography (BPP). We introduce a new analysis method that enables lattice rotation and out-of-plane strain to be determined independently from a single BPP phase reconstruction, and we apply it to two laterally adjacent, multiaxially stressed materials in a prototype channel device. These results quantitatively agree with mechanical modeling and demonstrate the ability of BPP to map out-of-plane lattice dilatation, a parameter critical to the performance of electronic materials.
authors.affiliation: Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Martin V
authors.initials: MV
authors.lastname: Holt
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Stephan O
authors.initials: SO
authors.lastname: Hruszkewycz
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.
authors.forename: Conal E
authors.initials: CE
authors.lastname: Murray
authors.affiliation: IBM Semiconductor Research and Development Center, Hopewell Junction, New York 12533, USA.
authors.forename: Judson R
authors.initials: JR
authors.lastname: Holt
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Deborah M
authors.initials: DM
authors.lastname: Paskiewicz
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Paul H
authors.initials: PH
authors.lastname: Fuoss