Bias free gap creation in bilayer graphene.
For graphene to be utilized in the digital electronics industry the challenge is to create bandgaps of order 1 eV as simply as possible. The most successful methods for the creation of gaps in graphene are (a) confining the electrons in nanoribbons, which is technically difficult or (b) placing a potential difference across bilayer graphene, which is limited to gaps of around 300 meV for reasonably sized electric fields. Here we propose that electronic band gaps can be created without applying an external electric field, by using the electron-phonon interaction formed when bilayer graphene is sandwiched between highly polarisable ionic materials. We derive and solve self-consistent equations, finding that a large gap can be formed for intermediate electron-phonon coupling. The gap originates from the amplification of an intrinsic Coulomb interaction due to the proximity of carbon atoms in neighbouring planes.
Department of Physical Sciences, The Open University, Walton Hall, Milton Keynes MK7 6AA, UK.
A R
AR
Davenport
J P
JP
Hague
D003198:Computer Simulation; D006108:Graphite / Q000737:chemistry*; D008956:Models, Chemical; D008958:Models, Molecular; D049329:Nanostructures / Q000737:chemistry* / Q000648:ultrastructure*; D055672:Static Electricity
D006108:Graphite