Solution epitaxial growth of cobalt nanowires on crystalline substrates for data storage densities beyond 1 Tbit/in2.
The implementation of nano-objects in numerous emerging applications often demands their integration in macroscopic devices. Here we present the bottom-up epitaxial solution growth of high-density arrays of vertical 5 nm diameter single-crystalline metallic cobalt nanowires on wafer-scale crystalline metal surfaces. The nanowires form regular hexagonal arrays on unpatterned metallic films. These hybrid heterostructures present an important perpendicular magnetic anisotropy and pave the way to a high density magnetic recording device, with capacities above 10 Terabits/in(2). This method bypasses the need of assembling and orientating free colloidal nanocrystals on surfaces. Its generalization to other materials opens new perspectives toward many applications.
Université de Toulouse ; INSA, UPS, LPCNO, CNRS-UMR5215, 135 avenue de Rangueil, 31077 Toulouse, France.
Nikolaos
N
Liakakos
Thomas
T
Blon
Charbel
C
Achkar
Virginie
V
Vilar
Benoit
B
Cormary
Reasmey P
RP
Tan
Omar
O
Benamara
Grégory
G
Chaboussant
Frédéric
F
Ott
Bénédicte
B
Warot-Fonrose
Etienne
E
Snoeck
Bruno
B
Chaudret
Katerina
K
Soulantica
Marc
M
Respaud