Transistor application of alkyl-substituted picene.
Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21 cm2 V(-1) s(-1), which is the highest μ value recorded for organic thin-film FETs; the average μ value (<μ>) evaluated from twelve FET devices was 14(4) cm2 V(-1) s(-1). The <μ> values for picene-(C14H29)2 thin-film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5 cm2 V(-1) s(-1), and the lowest absolute threshold voltage, |Vth|, (5.2 V) was recorded with a PZT gate dielectric; the average |Vth| for PZT gate dielectric is 7(1) V. The solution-processed picene-(C14H29)2 FET was also fabricated with an SiO2 gate dielectric, yielding μ=3.4×10(-2) cm2 V(-1) s(-1). These results verify the effectiveness of picene-(C14H29)2 for electronics applications.
Department of Chemistry, Okayama University, Okayama 700-8530, Japan.
Hideki
H
Okamoto
Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan.
Shino
S
Hamao
Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan.
Hidenori
H
Goto
Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan.
Yusuke
Y
Sakai
Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan.
Masanari
M
Izumi
NARD Co. Ltd. Amagasaki, Amagasaki 660-0805, Japan.
Shin
S
Gohda
1] Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan [2] Research Center of New Functional Materials for Energy Production, Storage and Transport, Okayama University, Okayama 700-8530, Japan.
Yoshihiro
Y
Kubozono
Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan.
Ritsuko
R
Eguchi