Strain-induced anisotropic transport properties of LaBaCo₂O₅.₅+δ thin films on NdGaO₃ substrates.
Thin films of double-perovskite structural LaBaCo2O5.5+δ were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590%.
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, People's Republic of China.
Ming
M
Liu
Qiang
Q
Zou
Chunrui
C
Ma
Greg
G
Collins
Shao-Bo
SB
Mi
Chun-Lin
CL
Jia
Haiming
H
Guo
Hongjun
H
Gao
Chonglin
C
Chen