Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors.
We report the fabrication of a photonic platform consisting of single wire light-emitting diodes (LED) and photodetectors optically coupled by waveguides. MOVPE-grown (metal-organic vapor-phase epitaxy) InGaN/GaN p-n junction core-shell nanowires have been used for device fabrication. To achieve a good spectral matching between the emission wavelength and the detection range, different active regions containing either five narrow InGaN/GaN quantum wells or one wide InGaN segment were employed for the LED and the detector, respectively. The communication wavelength is ∼400 nm. The devices are realized by means of electron beam lithography on Si/SiO2 templates and connected by ∼100 μm long nonrectilinear SiN waveguides. The photodetector current trace shows signal variation correlated with the LED on/off switching with a fast transition time below 0.5 s.
Institut d'Electronique Fondamentale, UMR CNRS 8622, University Paris Sud 11 , 91405 Orsay, France.
M
M
Tchernycheva
A
A
Messanvi
A
A
de Luna Bugallo
G
G
Jacopin
P
P
Lavenus
L
L
Rigutti
H
H
Zhang
Y
Y
Halioua
F H
FH
Julien
J
J
Eymery
C
C
Durand