Pure thiophene-sulfur doped reduced graphene oxide: synthesis, structure, and electrical properties.
Here we propose, for the first time, a new and green ethanol-thermal reaction method to synthesize high-quality and pure thiophene-sulfur doped reduced graphene oxide (rGO), which establishes an excellent platform for studying sulfur (S) doping effects on the physical/chemical properties of this material. We have quantitatively demonstrated that the conductivity enhancement of thiophene-S doped rGO is not only caused by the more effective reduction induced by S doping, but also by the doped S atoms, themselves. Furthermore, we demonstrate that the S doping is more effective in enhancing conductivity of rGO than nitrogen (N) doping due to its stronger electron donor ability. Finally, the dye-sensitized solar cell (DSCC) employing the S-doped rGO/TiO2 photoanode exhibits much better performance than undoped rGO/TiO2, N-doped rGO/TiO2 and TiO2 photoanodes. It therefore seems promising for thiophene-S doped rGO to be widely used in electronic and optoelectronic devices.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China. yfchen@uestc.edu.cn lipingjian@uestc.edu.cn.
Zegao
Z
Wang
Pingjian
P
Li
Yuanfu
Y
Chen
Jiarui
J
He
Wanli
W
Zhang
Oliver G
OG
Schmidt
Yanrong
Y
Li