Flexoelectric control of defect formation in ferroelectric epitaxial thin films.
Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint ) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function.
Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 151-747, Korea; Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Korea.
Daesu
D
Lee
Byung Chul
BC
Jeon
Aram
A
Yoon
Yeong Jae
YJ
Shin
Myang Hwan
MH
Lee
Tae Kwon
TK
Song
Sang Don
SD
Bu
Miyoung
M
Kim
Jin-Seok
JS
Chung
Jong-Gul
JG
Yoon
Tae Won
TW
Noh
D004560:Electricity; D005290:Ferric Compounds / Q000737:chemistry; D055595:Mechanical Phenomena; D013696:Temperature
D005290:Ferric Compounds; C001215:ferrite
defect engineering; epitaxial thin film; ferroelectric; flexoelectric; strain gradient