Electron spin resonance and spin-valley physics in a silicon double quantum dot.
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.
1] Department of Physics and Astronomy, University of California at Los Angeles, 405 Hilgard Avenue, Los Angeles, California 90095, USA [2].
Xiaojie
X
Hao
1] Laboratory for Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740, USA [2].
Rusko
R
Ruskov
1] Department of Physics and Astronomy, University of California at Los Angeles, 405 Hilgard Avenue, Los Angeles, California 90095, USA [2].
Ming
M
Xiao
Laboratory for Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740, USA.
Charles
C
Tahan
Department of Physics and Astronomy, University of California at Los Angeles, 405 Hilgard Avenue, Los Angeles, California 90095, USA.
HongWen
H
Jiang