Wide range photodetector based on catalyst free grown indium selenide microwires.
We first report the catalyst free growth of indium selenide microwires through a facile approach in a horizontal tube furnace using indium and selenium elemental powders as precursors. The synthesized microwires are γ-phase, high quality, single crystalline and grown along the [112̅0] direction. The wires have a uniform diameter of ∼1 μm and lengths of several micrometers. Photodetectors fabricated from synthesized microwires show reliable and stable photoresponse exhibiting a photoresponsivity of 0.54 A/W, external quantum efficiency of 1.23 at 633 nm with 4 V bias. The photodetector has a reasonable response time of 0.11 s and specific detectivity of 3.94 × 10(10) Jones at 633 nm with a light detection range from 350 to 1050 nm, covering the UV-vis-NIR region. The photoresponse shown by single wire is attributed to direct band gap (Eg = 1.3 eV) and superior single crystalline quality. The photoresponsive studies of single microwires clearly suggest the use of this new and facile growth technique without using catalysts for fabrication of indium selenide microwires in next-generation sensors and detectors for commercial and military applications.
Research Centre of Materials Science, School of Materials Science and Engineering, Beijing Institute of Technology , Beijing100081, People's Republic of China.
Zulfiqar
Z
Ali
Misbah
M
Mirza
Chuanbao
C
Cao
Faheem K
FK
Butt
M
M
Tanveer
Muhammad
M
Tahir
Imran
I
Aslam
Faryal
F
Idrees
Muhammad
M
Safdar