Transparent, low-power pressure sensor matrix based on coplanar-gate graphene transistors.
A novel device architecture for preparing a transparent and low-voltage graphene pressure-sensor matrix on plastic and rubber substrates is demonstrated. The coplanar gate configuration of the graphene transistor enables a simplified procedure. The resulting devices exhibit excellent device performance, including a high transparency of ca. 80% in the visible range, a low operating voltage less than 2 V, a high pressure sensitivity of 0.12 kPa(-1) , and excellent mechanical durability over 2500 cycles.
SKKU Advanced Institute of Nanotechnology (SAINT), School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea; Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea.
Qijun
Q
Sun
Do Hwan
DH
Kim
Sang Sik
SS
Park
Nae Yoon
NY
Lee
Yu
Y
Zhang
Jung Heon
JH
Lee
Kilwon
K
Cho
Jeong Ho
JH
Cho
D032701:Biomimetics / Q000295:instrumentation*; D006108:Graphite; D011312:Pressure; D012867:Skin; D014173:Transistors, Electronic
D006108:Graphite
coplanar gate graphene transistor; electronic skin; low power; pressure sensors active matrix; transparency