title: An atomic layer deposition chamber for in situ x-ray diffraction and scattering analysis.
abstract: The crystal structure of thin films grown by atomic layer deposition (ALD) will determine important performance properties such as conductivity, breakdown voltage, and catalytic activity. We report the design of an atomic layer deposition chamber for in situ x-ray analysis that can be used to monitor changes to the crystal structural during ALD. The application of the chamber is demonstrated for Pt ALD on amorphous SiO2 and SrTiO3 (001) using synchrotron-based high resolution x-ray diffraction, grazing incidence x-ray diffraction, and grazing incidence small angle scattering.
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Scott M
authors.initials: SM
authors.lastname: Geyer
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Rungthiwa
authors.initials: R
authors.lastname: Methaapanon
authors.affiliation: Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Richard W
authors.initials: RW
authors.lastname: Johnson
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Woo-Hee
authors.initials: WH
authors.lastname: Kim
authors.affiliation: SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025, USA.
authors.forename: Douglas G
authors.initials: DG
authors.lastname: Van Campen
authors.affiliation: SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025, USA.
authors.forename: Apurva
authors.initials: A
authors.lastname: Metha
authors.affiliation: Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
authors.forename: Stacey F
authors.initials: SF
authors.lastname: Bent