title: Open-circuit voltage improvement in tantalum-doped TiO2 nanocrystals.
abstract: Enhanced electron concentration derived from Ta(5+) doping is responsible for the open-circuit voltage improvement due to the upward shift of the Fermi level, but the oxygen defects generated retard the negative shift of the Fermi level. By mediating the trap states, highly efficient DSSC devices could be achieved.
authors.affiliation: Key Laboratory for Ultrafine Materials of Ministry of Education, East China University of Science and Technology, Shanghai 200237, China. gufeng@ecust.edu.cn huyanjie@ecust.edu.cn.
authors.forename: Feng
authors.initials: F
authors.lastname: Gu
authors.forename: Wenjuan
authors.initials: W
authors.lastname: Huang
authors.forename: Shufen
authors.initials: S
authors.lastname: Wang
authors.forename: Xing
authors.initials: X
authors.lastname: Cheng
authors.forename: Yanjie
authors.initials: Y
authors.lastname: Hu
authors.forename: Pooi See
authors.initials: PS
authors.lastname: Lee