title: Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control.
abstract: Growth of III-V nanowires on the [100]-oriented industry standard substrates is critical for future integrated nanowire device development. Here we present an in-depth analysis of the seemingly complex ensembles of epitaxial nanowires grown on InP (100) substrates. The nanowires are categorized into three types as vertical, nonvertical, and planar, and the growth directions, facets, and crystal structure of each type are investigated. The nonvertical growth directions are mathematically modeled using a three-dimensional multiple-order twinning concept. The nonvertical nanowires can be further classified into two different types, with one type growing in the ⟨111⟩ directions and the other in the ⟨100⟩ directions after initial multiple three-dimensional twinning. We find that 99% of the total nanowires are grown either along ⟨100⟩, ⟨111⟩, or ⟨110⟩ growth directions by {100} or {111} growth facets. We also demonstrate relative control of yield of these different types of nanowires, by tuning pregrowth annealing conditions and growth parameters. Together, the knowledge and controllability of the types of nanowires provide an ideal foundation to explore novel geometries that combine different crystal structures, with potential for both fundamental science research and device applications.
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 0200, Australia.
authors.forename: H Aruni
authors.initials: HA
authors.lastname: Fonseka
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff
authors.forename: Jennifer
authors.initials: J
authors.lastname: Wong-Leung
authors.forename: Amira S
authors.initials: AS
authors.lastname: Ameruddin
authors.forename: Hark Hoe
authors.initials: HH
authors.lastname: Tan
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish