title: p-i-n Heterojunction solar cells with a colloidal quantum-dot absorber layer.
abstract: A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.
authors.affiliation: Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA.
authors.forename: Dong-Kyun
authors.initials: DK
authors.lastname: Ko
authors.forename: Patrick R
authors.initials: PR
authors.lastname: Brown
authors.forename: Moungi G
authors.initials: MG
authors.lastname: Bawendi
authors.forename: Vladimir
authors.initials: V
authors.lastname: Bulović
keywords: depletion region; lead selenide; p-i-n heterojunctions; quantum dot solar cells