title: CMOS-compatible 75 mW erbium-doped distributed feedback laser.
abstract: On-chip, high-power, erbium-doped distributed feedback lasers are demonstrated in a CMOS-compatible fabrication flow. The laser cavities consist of silicon nitride waveguide and grating features, defined by wafer-scale immersion lithography and an erbium-doped aluminum oxide layer deposited as the final step in the fabrication process. The large mode size lasers demonstrate single-mode continuous wave operation with a maximum output power of 75 mW without any thermal damage. The laser output power does not saturate at high pump intensities and is, therefore, capable of delivering even higher on-chip signals if a stronger pump is utilized. The amplitude noise of the laser is investigated and the laser is shown to be stable and free from self-pulsing when the pump power is sufficiently above threshold.
authors.forename: Ehsan Shah
authors.initials: ES
authors.lastname: Hosseini
authors.lastname: Purnawirman
authors.forename: Jonathan D B
authors.initials: JD
authors.lastname: Bradley
authors.forename: Jie
authors.initials: J
authors.lastname: Sun
authors.forename: Gerald
authors.initials: G
authors.lastname: Leake
authors.forename: Thomas N
authors.initials: TN
authors.lastname: Adam
authors.forename: Douglas D
authors.initials: DD
authors.lastname: Coolbaugh
authors.forename: Michael R
authors.initials: MR
authors.lastname: Watts