title: 3D strain measurement in electronic devices using through-focal annular dark-field imaging.
abstract: Spherical aberration correction in high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) allows us to form an electron probe with reduced depth of field. Using through-focal HAADF imaging, we experimentally demonstrated 3D strain measurement in a strained-channel transistor. The strain field distribution in the channel region was obtained by scanning an electron beam over a plan-view specimen. Furthermore, the decrease in the strain fields toward the silicon substrate was revealed at different focal planes with a 5-nm focal step. These results demonstrate that it is possible to reconstruct the 3D strain field in electronic devices.
authors.affiliation: Memory Analysis Science & Engineering Group, Samsung Electronics, San #16, Hwasung-city, Gyeonggi-Do 445-701, Republic of Korea.
authors.forename: Suhyun
authors.initials: S
authors.lastname: Kim
authors.affiliation: Memory Analysis Science & Engineering Group, Samsung Electronics, San #16, Hwasung-city, Gyeonggi-Do 445-701, Republic of Korea.
authors.forename: Younheum
authors.initials: Y
authors.lastname: Jung
authors.affiliation: Memory Analysis Science & Engineering Group, Samsung Electronics, San #16, Hwasung-city, Gyeonggi-Do 445-701, Republic of Korea.
authors.forename: Sungho
authors.initials: S
authors.lastname: Lee
authors.affiliation: Memory Analysis Science & Engineering Group, Samsung Electronics, San #16, Hwasung-city, Gyeonggi-Do 445-701, Republic of Korea.
authors.forename: Joong
authors.initials: J
authors.lastname: Jung Kim
authors.affiliation: Memory Analysis Science & Engineering Group, Samsung Electronics, San #16, Hwasung-city, Gyeonggi-Do 445-701, Republic of Korea.
authors.forename: Gwangseon
authors.initials: G
authors.lastname: Byun
authors.affiliation: Memory Analysis Science & Engineering Group, Samsung Electronics, San #16, Hwasung-city, Gyeonggi-Do 445-701, Republic of Korea.
authors.forename: Sunyoung
authors.initials: S
authors.lastname: Lee
authors.affiliation: Memory Analysis Science & Engineering Group, Samsung Electronics, San #16, Hwasung-city, Gyeonggi-Do 445-701, Republic of Korea.
authors.forename: Haebum
authors.initials: H
authors.lastname: Lee
keywords: 3D strain measurement; High-angle annular dark-field; Through-focal series