title: Comment on "Towards direct-gap silicon phases by the inverse band structure design approach".
abstract: A Comment on the Letter by H. J. Xiang, B. Huang, E. Kan, S.-H. Wei, and X. G. Gong, [Phys. Rev. Lett. 110, 118702 (2013).
authors.affiliation: Department of Physics, Universität Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland.
authors.forename: Maximilian
authors.initials: M
authors.lastname: Amsler
authors.affiliation: Max-Planck Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany.
authors.forename: José A
authors.initials: JA
authors.lastname: Flores-Livas
authors.affiliation: Institut Lumière Matière and ETSF, UMR5306, Université Lyon 1-CNRS, Université de Lyon, F-69622 Villeurbanne Cedex, France.
authors.forename: Silvana
authors.initials: S
authors.lastname: Botti
authors.affiliation: Institut Lumière Matière and ETSF, UMR5306, Université Lyon 1-CNRS, Université de Lyon, F-69622 Villeurbanne Cedex, France.
authors.forename: Miguel A L
authors.initials: MA
authors.lastname: Marques
authors.affiliation: Department of Physics, Universität Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland.
authors.forename: Stefan
authors.initials: S
authors.lastname: Goedecker
mesh_terms: D003460:Crystallization / Q000379:methods; D012825:Silicon / Q000737:chemistry*
chemical_list: D012825:Silicon