title: Atomic layer deposited gallium oxide buffer layer enables 1.2 V open-circuit voltage in cuprous oxide solar cells.
abstract: The power conversion efficiency of solar cells based on copper (I) oxide (Cu2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2 O3 ) layer. By improving band-alignment and passivating interface defects, the device exhibits an open-circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.
authors.affiliation: Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA.
authors.forename: Yun Seog
authors.initials: YS
authors.lastname: Lee
authors.forename: Danny
authors.initials: D
authors.lastname: Chua
authors.forename: Riley E
authors.initials: RE
authors.lastname: Brandt
authors.forename: Sin Cheng
authors.initials: SC
authors.lastname: Siah
authors.forename: Jian V
authors.initials: JV
authors.lastname: Li
authors.forename: Jonathan P
authors.initials: JP
authors.lastname: Mailoa
authors.forename: Sang Woon
authors.initials: SW
authors.lastname: Lee
authors.forename: Roy G
authors.initials: RG
authors.lastname: Gordon
authors.forename: Tonio
authors.initials: T
authors.lastname: Buonassisi
mesh_terms: D002021:Buffers; D003300:Copper / Q000737:chemistry*; D011211:Electric Power Supplies; D005708:Gallium / Q000737:chemistry*; D008958:Models, Molecular; D008968:Molecular Conformation; D012993:Solar Energy
chemical_list: D002021:Buffers; C038863:gallium oxide; D003300:Copper; D005708:Gallium; C000520:cuprous oxide
keywords: charge transport; electro-optical materials; photovoltaic devices; solar cells; thin films