title: Achieving high-quality single-atom nitrogen doping of graphene/SiC(0001) by ion implantation and subsequent thermal stabilization.
abstract: We report a straightforward method to produce high-quality nitrogen-doped graphene on SiC(0001) using direct nitrogen ion implantation and subsequent stabilization at temperatures above 1300 K. We demonstrate that double defects, which comprise two nitrogen defects in a second-nearest-neighbor (meta) configuration, can be formed in a controlled way by adjusting the duration of bombardment. Two types of atomic contrast of single N defects are identified in scanning tunneling microscopy. We attribute the origin of these two contrasts to different tip structures by means of STM simulations. The characteristic dip observed over N defects is explained in terms of the destructive quantum interference.
authors.forename: Mykola
authors.initials: M
authors.lastname: Telychko
authors.forename: Pingo
authors.initials: P
authors.lastname: Mutombo
authors.forename: Martin
authors.initials: M
authors.lastname: Ondráček
authors.forename: Prokop
authors.initials: P
authors.lastname: Hapala
authors.forename: François C
authors.initials: FC
authors.lastname: Bocquet
authors.forename: Jindřich
authors.initials: J
authors.lastname: Kolorenč
authors.forename: Martin
authors.initials: M
authors.lastname: Vondráček
authors.forename: Pavel
authors.initials: P
authors.lastname: Jelínek
authors.forename: Martin
authors.initials: M
authors.lastname: Švec