title: Merging of Landau levels in a strongly interacting two-dimensional electron system in silicon.
abstract: We show that the merging of the spin- and valley-split Landau levels at the chemical potential is an intrinsic property of a strongly interacting two-dimensional electron system in silicon. Evidence for the level merging is given by available experimental data.
authors.affiliation: Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia.
authors.forename: A A
authors.initials: AA
authors.lastname: Shashkin
authors.affiliation: Institute of Solid State Physics, Chernogolovka, Moscow District 142432, Russia and Moscow Institute of Physics and Technology, Dolgoprudny, Moscow District 141700, Russia.
authors.forename: V T
authors.initials: VT
authors.lastname: Dolgopolov
authors.affiliation: McDonnell Center for the Space Sciences & Department of Physics, Washington University, Saint Louis, Missouri 63130, USA.
authors.forename: J W
authors.initials: JW
authors.lastname: Clark
authors.affiliation: Petersburg Nuclear Physics Institute, NRC Kurchatov Institute, Gatchina 188300, Russia and Clark Atlanta University, Atlanta, Georgia 30314, USA.
authors.forename: V R
authors.initials: VR
authors.lastname: Shaginyan
authors.affiliation: Moscow Institute of Physics and Technology, Dolgoprudny, Moscow District 141700, Russia and NRC Kurchatov Institute, Moscow 123182, Russia.
authors.forename: M V
authors.initials: MV
authors.lastname: Zverev
authors.affiliation: NRC Kurchatov Institute, Moscow 123182, Russia.
authors.forename: V A
authors.initials: VA
authors.lastname: Khodel