title: Localization and electron-electron interactions in few-layer epitaxial graphene.
abstract: This paper presents a study of the quantum corrections caused by electron-electron interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. The results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two-dimensional systems in conventional semiconductor structures, is applicable to few-layer epitaxial graphene when the unique properties of graphene on the substrate, such as intervalley scattering, are taken into account. It is suggested that magnetic-field-dependent electron-electron interactions and Kondo physics are required for obtaining a thorough understanding of magnetotransport in few-layer epitaxial graphene.
authors.forename: Shun-Tsung
authors.initials: ST
authors.lastname: Lo
authors.forename: Fan-Hung
authors.initials: FH
authors.lastname: Liu
authors.forename: Chang-Shun
authors.initials: CS
authors.lastname: Hsu
authors.forename: Chiashain
authors.initials: C
authors.lastname: Chuang
authors.forename: Lung-I
authors.initials: LI
authors.lastname: Huang
authors.forename: Yasuhiro
authors.initials: Y
authors.lastname: Fukuyama
authors.forename: Yanfei
authors.initials: Y
authors.lastname: Yang
authors.forename: Randolph E
authors.initials: RE
authors.lastname: Elmquist
authors.forename: Chi-Te
authors.initials: CT
authors.lastname: Liang