title: High spatial resolution mapping of deposition layers on plasma facing materials by laser ablation microprobe time-of-flight mass spectroscopy.
abstract: A laser ablation microprobe time-of-flight mass spectroscopy (LAM-TOF-MS) system with high spatial resolution, ~20 nm in depth and ~500 μm or better on the surface, is developed to analyze the composition distributions of deposition layers on the first wall materials or first mirrors in tokamak. The LAM-TOF-MS system consists of a laser ablation microprobe combined with a TOF-MS and a data acquisition system based on a LabVIEW program software package. Laser induced ablation combined with TOF-MS is an attractive method to analyze the depth profile of deposited layer with successive laser shots, therefore, it can provide information for composition reconstruction of the plasma wall interaction process. In this work, we demonstrate that the LAM-TOF-MS system is capable of characterizing the depth profile as well as mapping 2D composition of deposited film on the molybdenum first mirror retrieved from HL-2A tokamak, with particular emphasis on some of the species produced during the ablation process. The presented LAM-TOF-MS system provides not only the 3D characterization of deposition but also the removal efficiency of species of concern.
authors.affiliation: School of Physics and Optical Electronic Technology, Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Chinese Ministry of Education, Dalian University of Technology, Dalian 116024, China.
authors.forename: Qingmei
authors.initials: Q
authors.lastname: Xiao
authors.affiliation: School of Physics and Optical Electronic Technology, Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Chinese Ministry of Education, Dalian University of Technology, Dalian 116024, China.
authors.forename: Cong
authors.initials: C
authors.lastname: Li
authors.affiliation: School of Physics and Optical Electronic Technology, Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Chinese Ministry of Education, Dalian University of Technology, Dalian 116024, China.
authors.forename: Ran
authors.initials: R
authors.lastname: Hai
authors.affiliation: School of Physics and Optical Electronic Technology, Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Chinese Ministry of Education, Dalian University of Technology, Dalian 116024, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Zhang
authors.affiliation: School of Physics and Optical Electronic Technology, Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Chinese Ministry of Education, Dalian University of Technology, Dalian 116024, China.
authors.forename: Chunlei
authors.initials: C
authors.lastname: Feng
authors.affiliation: Southwestern Institute of Physics, P.O. Box 432, No. 3 South Section 3, Circle Road 2, Chengdu 610041, Sichuan, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhou
authors.affiliation: Southwestern Institute of Physics, P.O. Box 432, No. 3 South Section 3, Circle Road 2, Chengdu 610041, Sichuan, China.
authors.forename: Longwen
authors.initials: L
authors.lastname: Yan
authors.affiliation: Southwestern Institute of Physics, P.O. Box 432, No. 3 South Section 3, Circle Road 2, Chengdu 610041, Sichuan, China.
authors.forename: Xuru
authors.initials: X
authors.lastname: Duan
authors.affiliation: School of Physics and Optical Electronic Technology, Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Chinese Ministry of Education, Dalian University of Technology, Dalian 116024, China.
authors.forename: Hongbin
authors.initials: H
authors.lastname: Ding