title: CdSe/ZnS quantum dot thin film formation by an electrospray deposition process for light-emitting devices.
abstract: About 30 nm quantum-dot thin films are formed by electrospray deposition (ESD) process and quantum-dot-light-emitting-diodes (QD-LEDs) are demonstrated. Maximum brightness of 23 000 cd m(-2) and current efficiency of 5.9 cd A(-1) are achieved with the ESD process. The ESD process can be a potential solution for large area quantum dot layers with simple and flexible control.
authors.affiliation: School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: My Duyen
authors.initials: MD
authors.lastname: Ho
authors.forename: Namhun
authors.initials: N
authors.lastname: Kim
authors.forename: Daekyoung
authors.initials: D
authors.lastname: Kim
authors.forename: Sung Min
authors.initials: SM
authors.lastname: Cho
authors.forename: Heeyeop
authors.initials: H
authors.lastname: Chae
keywords: LEDs; electrospray deposition; quantum dots; solution process