title: Electrically and optically readable light emitting memories.
abstract: Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application.
authors.affiliation: 1] Department of Physics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China [2] Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China.
authors.forename: Che-Wei
authors.initials: CW
authors.lastname: Chang
authors.affiliation: Department of Physics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China.
authors.forename: Wei-Chun
authors.initials: WC
authors.lastname: Tan
authors.affiliation: Department of Physics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China.
authors.forename: Meng-Lin
authors.initials: ML
authors.lastname: Lu
authors.affiliation: Institute of Optoelectronic Sciences, National Taiwan Ocean University, No.2, Pei-Ning Road, Keelung 224, Taiwan, Republic of China.
authors.forename: Tai-Chun
authors.initials: TC
authors.lastname: Pan
authors.affiliation: Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China.
authors.forename: Ying-Jay
authors.initials: YJ
authors.lastname: Yang
authors.affiliation: 1] Department of Physics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China [2] Center for Emerging Material and Advanced Devices, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China.
authors.forename: Yang-Fang
authors.initials: YF
authors.lastname: Chen