title: Experimental observation of negative capacitance in ferroelectrics at room temperature.
abstract: Effective negative capacitance has been postulated in ferroelectrics because there is a hysteresis in plots of polarization-electric field. Compelling experimental evidence of effective negative capacitance is presented here at room temperature in engineered devices, where it is stabilized by the presence of a paraelectric material. In future integrated circuits, the incorporation of such negative capacitance into MOSFET gate stacks would reduce the subthreshold slope, enabling low power operation and reduced self-heating.
authors.affiliation: School of Electrical and Electronic Engineering, Newcastle University , Newcastle upon Tyne NE1 7RU, United Kingdom.
authors.forename: Daniel J R
authors.initials: DJ
authors.lastname: Appleby
authors.forename: Nikhil K
authors.initials: NK
authors.lastname: Ponon
authors.forename: Kelvin S K
authors.initials: KS
authors.lastname: Kwa
authors.forename: Bin
authors.initials: B
authors.lastname: Zou
authors.forename: Peter K
authors.initials: PK
authors.lastname: Petrov
authors.forename: Tianle
authors.initials: T
authors.lastname: Wang
authors.forename: Neil M
authors.initials: NM
authors.lastname: Alford
authors.forename: Anthony
authors.initials: A
authors.lastname: O'Neill