title: Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices.
abstract: Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems.
authors.affiliation: Dipartimento di Scienze e Metodi dell'Ingegneria, Università di Modena e Reggio Emilia, Via Amendola 2 Padiglione Morselli, I-42122 Reggio Emilia, Italy.
authors.forename: Matteo
authors.initials: M
authors.lastname: Bertocchi
authors.affiliation: Laboratoire de Chimie Théorique, Université Pierre et Marie Curie, 75005 Paris, France.
authors.forename: Eleonora
authors.initials: E
authors.lastname: Luppi
authors.affiliation: Dipartimento di Scienze e Metodi dell'Ingegneria, Università di Modena e Reggio Emilia, Via Amendola 2 Padiglione Morselli, I-42122 Reggio Emilia, Italy.
authors.forename: Elena
authors.initials: E
authors.lastname: Degoli
authors.affiliation: Laboratoire des Solides Irradiés, Ecole Polytechnique, CNRS, CEA-DSM and European Theoretical Spectroscopy Facility (ETSF), Route de Saclay, 91128 Palaiseau, France.
authors.forename: Valérie
authors.initials: V
authors.lastname: Véniard
authors.affiliation: Istituto di Nanoscienze-CNR-S3, Via Campi 213A, 41125 Modena, Italy.
authors.forename: Stefano
authors.initials: S
authors.lastname: Ossicini