title: Optical excitation and external photoluminescence quantum efficiency of Eu³⁺ in GaN.
abstract: We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y₂O₃, we find that the fraction of Eu(3+) ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (~10%) and (~3%) under continuous wave and pulsed excitation, respectively.
authors.affiliation: Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands.
authors.forename: W D A M
authors.initials: WD
authors.lastname: de Boer
authors.affiliation: Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands.
authors.forename: C
authors.initials: C
authors.lastname: McGonigle
authors.affiliation: Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands.
authors.forename: T
authors.initials: T
authors.lastname: Gregorkiewicz
authors.affiliation: Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Osaka, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Fujiwara
authors.affiliation: Graduate School of Human and Environmental studies, Kyoto University, Kyoto, Japan.
authors.forename: S
authors.initials: S
authors.lastname: Tanabe
authors.affiliation: FCT-DEEI, University of The Algarve, 8005-139 Faro, Portugal.
authors.forename: P
authors.initials: P
authors.lastname: Stallinga