title: Graphene-quantum-dot nonvolatile charge-trap flash memories.
abstract: Nonvolatile flash-memory capacitors containing graphene quantum dots (GQDs) of 6, 12, and 27 nm average sizes (d) between SiO2 layers for use as charge traps have been prepared by sequential processes: ion-beam sputtering deposition (IBSD) of 10 nm SiO2 on a p-type wafer, spin-coating of GQDs on the SiO2 layer, and IBSD of 20 nm SiO2 on the GQD layer. The presence of almost a single array of GQDs at a distance of ∼13 nm from the SiO2/Si wafer interface is confirmed by transmission electron microscopy and photoluminescence. The memory window estimated by capacitance-voltage curves is proportional to d for sweep voltages wider than  ± 3 V, and for d = 27 nm the GQD memories show a maximum memory window of 8 V at a sweep voltage of  ± 10 V. The program and erase speeds are largest at d = 12 and 27 nm, respectively, and the endurance and data-retention properties are the best at d = 27 nm. These memory behaviors can be attributed to combined effects of edge state and quantum confinement.
authors.affiliation: Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Korea.
authors.forename: Soong
authors.initials: S
authors.lastname: Sin Joo
authors.forename: Jungkil
authors.initials: J
authors.lastname: Kim
authors.forename: Soo Seok
authors.initials: SS
authors.lastname: Kang
authors.forename: Sung
authors.initials: S
authors.lastname: Kim
authors.forename: Suk-Ho
authors.initials: SH
authors.lastname: Choi
authors.forename: Sung Won
authors.initials: SW
authors.lastname: Hwang