title: A mechanical and electrical transistor structure (METS) with a sub-2 nm nanogap for effective voltage scaling.
abstract: A mechanical and electrical transistor structure (METS) is proposed for effective voltage scaling. The sub-2 nm nanogap by atomic layer deposition (ALD) without stiction and the application of a dielectric with high-permittivity allowed the pull-in voltage of sub-2 V, showing the strength of the mechanical actuation that is hard to realize in a typical complementary metal-oxide-semiconductor (CMOS) transistor. The results are verified by simulation and interpreted by the numerical equation. Therefore the METS can pave a new way to make a breakthrough to overcome the limits of CMOS technology.
authors.affiliation: The laboratory of Nano-Oriented Bio-Electronics Lab (NOBEL), Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Korea. ykchoi@ee.kaist.ac.kr.
authors.forename: Byung-Hyun
authors.initials: BH
authors.lastname: Lee
authors.forename: Dong-Il
authors.initials: DI
authors.lastname: Moon
authors.forename: HyunJae
authors.initials: H
authors.lastname: Jang
authors.forename: Chang-Hoon
authors.initials: CH
authors.lastname: Kim
authors.forename: Myeong-Lok
authors.initials: ML
authors.lastname: Seol
authors.forename: Ji-Min
authors.initials: JM
authors.lastname: Choi
authors.forename: Dong-Il
authors.initials: DI
authors.lastname: Lee
authors.forename: Min-Wu
authors.initials: MW
authors.lastname: Kim
authors.forename: Jun-Bo
authors.initials: JB
authors.lastname: Yoon
authors.forename: Yang-Kyu
authors.initials: YK
authors.lastname: Choi