title: A thienoisoindigo-naphthalene polymer with ultrahigh mobility of 14.4 cm(2)/V·s that substantially exceeds benchmark values for amorphous silicon semiconductors.
abstract: By considering the qualitative benefits associated with solution rheology and mechanical properties of polymer semiconductors, it is expected that polymer-based electronic devices will soon enter our daily lives as indispensable elements in a myriad of flexible and ultra low-cost flat panel displays. Despite more than a decade of research focused on designing and synthesizing state-of-the-art polymer semiconductors for improving charge transport characteristics, the current mobility values are still not sufficient for many practical applications. The confident mobility in excess of ∼10 cm(2)/V·s is the most important requirement for enabling the realization of the aforementioned near-future products. We report on an easily attainable donor-acceptor (D-A) polymer semiconductor: poly(thienoisoindigo-alt-naphthalene) (PTIIG-Np). An unprecedented mobility of 14.4 cm(2)/V·s, by using PTIIG-Np with a high-k gate dielectric poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)), is achieved from a simple coating processing, which is of a magnitude that is very difficult to obtain with conventional TFTs by means of molecular engineering. This work, therefore, represents a major step toward truly viable plastic electronics.
authors.affiliation: School of Energy and Chemical Engineering, KIER-UNIST Advanced Center for Energy, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 689-798, South Korea.
authors.forename: Gyoungsik
authors.initials: G
authors.lastname: Kim
authors.forename: Seok-Ju
authors.initials: SJ
authors.lastname: Kang
authors.forename: Gitish K
authors.initials: GK
authors.lastname: Dutta
authors.forename: Young-Kyu
authors.initials: YK
authors.lastname: Han
authors.forename: Tae Joo
authors.initials: TJ
authors.lastname: Shin
authors.forename: Yong-Young
authors.initials: YY
authors.lastname: Noh
authors.forename: Changduk
authors.initials: C
authors.lastname: Yang