title: Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility.
abstract: Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm(2)V(-1)s(-1), large memory window (∼16 V), low read voltages (∼-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.
authors.affiliation: 1] Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia [2].
authors.forename: J A
authors.initials: JA
authors.lastname: Caraveo-Frescas
authors.affiliation: 1] Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia [2].
authors.forename: M A
authors.initials: MA
authors.lastname: Khan
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
authors.forename: H N
authors.initials: HN
authors.lastname: Alshareef