title: High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability.
abstract: High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 10(9) cm(-2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature.
authors.affiliation: Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
authors.forename: Weihuang
authors.initials: W
authors.lastname: Yang
authors.affiliation: Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
authors.forename: Jinchai
authors.initials: J
authors.lastname: Li
authors.affiliation: Department of Electrical and Computer Engineering and Center for Optoelectronics, University of North Carolina at Charlotte, Charlotte, NC, 28223 (USA).
authors.forename: Yong
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, 30050 (China).
authors.forename: Po-Kai
authors.initials: PK
authors.lastname: Huang
authors.affiliation: Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, 30050 (China).
authors.forename: Tien-Chang
authors.initials: TC
authors.lastname: Lu
authors.affiliation: Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, 30050 (China).
authors.forename: Hao-Chung
authors.initials: HC
authors.lastname: Kuo
authors.affiliation: Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
authors.forename: Shuping
authors.initials: S
authors.lastname: Li
authors.affiliation: Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
authors.forename: Xu
authors.initials: X
authors.lastname: Yang
authors.affiliation: Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
authors.forename: Hangyang
authors.initials: H
authors.lastname: Chen
authors.affiliation: Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
authors.forename: Dayi
authors.initials: D
authors.lastname: Liu
authors.affiliation: Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
authors.forename: Junyong
authors.initials: J
authors.lastname: Kang