title: Secure thermal infrared communications using engineered blackbody radiation.
abstract: The thermal (emitted) infrared frequency bands, from 20-40 THz and 60-100 THz, are best known for applications in thermography. This underused and unregulated part of the spectral range offers opportunities for the development of secure communications. The 'THz Torch' concept was recently presented by the authors. This technology fundamentally exploits engineered blackbody radiation, by partitioning thermally-generated spectral noise power into pre-defined frequency channels; the energy in each channel is then independently pulsed modulated and multiplexing schemes are introduced to create a robust form of short-range secure communications in the far/mid infrared. To date, octave bandwidth (25-50 THz) single-channel links have been demonstrated with 380 bps speeds. Multi-channel 'THz Torch' frequency division multiplexing (FDM) and frequency-hopping spread-spectrum (FHSS) schemes have been proposed, but only a slow 40 bps FDM scheme has been demonstrated experimentally. Here, we report a much faster 1,280 bps FDM implementation. In addition, an experimental proof-of-concept FHSS scheme is demonstrated for the first time, having a 320 bps data rate. With both 4-channel multiplexing schemes, measured bit error rates (BERs) of < 10(-6) are achieved over a distance of 2.5 cm. Our approach represents a new paradigm in the way niche secure communications can be established over short links.
authors.affiliation: 1] Centre for Terahertz Science and Engineering, Department of EEE, Imperial College London, Exhibition Road, London SW7 2AZ, UK [2] Institute of Microelectronics of Chinese Academy of Sciences, 3 Beitucheng West Road, Chaoyang District, Beijing 100029, PR China [3].
authors.forename: Xiaoxin
authors.initials: X
authors.lastname: Liang
authors.affiliation: 1] Centre for Terahertz Science and Engineering, Department of EEE, Imperial College London, Exhibition Road, London SW7 2AZ, UK [2].
authors.forename: Fangjing
authors.initials: F
authors.lastname: Hu
authors.affiliation: Institute of Microelectronics of Chinese Academy of Sciences, 3 Beitucheng West Road, Chaoyang District, Beijing 100029, PR China.
authors.forename: Yuepeng
authors.initials: Y
authors.lastname: Yan
authors.affiliation: Centre for Terahertz Science and Engineering, Department of EEE, Imperial College London, Exhibition Road, London SW7 2AZ, UK.
authors.forename: Stepan
authors.initials: S
authors.lastname: Lucyszyn