title: Abnormal coexistence of unipolar, bipolar, and threshold resistive switching in an Al/NiO/ITO structure.
abstract: This paper reports an abnormal coexistence of different resistive switching behaviors including unipolar (URS), bipolar (BRS), and threshold switching (TRS) in an Al/NiO/indium tin oxide (ITO) structure fabricated by chemical solution deposition. The switching behaviors have been strongly dependent on compliance current (CC) and switching processes. It shows reproducible URS and BRS after electroforming with low and high CC of 1 and 3 mA, respectively, which is contrary to previous reports. Furthermore, in the case of high-forming CC, TRS is observed after several switching cycles with a low-switching CC. Analysis of current-voltage relationship demonstrates that Poole-Frenkel conduction controlled by localized traps should be responsible for the resistance switching. The unique behaviors can be dominated by Joule heating filament mechanism in the dual-oxygen reservoir structure composed of Al/NiO interfacial layer and ITO. The tunable switching properties can render it flexible for device applications.
authors.affiliation: State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, People's Republic of China.
authors.forename: Xin-Cai
authors.initials: XC
authors.lastname: Yuan
authors.affiliation: School of Science, Southwest University of Science and Technology, Mianyang 621010, People's Republic of China.
authors.forename: Jin-Long
authors.initials: JL
authors.lastname: Tang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, People's Republic of China.
authors.forename: Hui-Zhong
authors.initials: HZ
authors.lastname: Zeng
authors.affiliation: State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, People's Republic of China.
authors.forename: Xian-Hua
authors.initials: XH
authors.lastname: Wei
keywords: Indium tin oxide substrate; Interface; Resistive switching; Thin film