title: Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes.
abstract: Polarization-reversed electron-blocking structure, which had negative polarization charges localized at the interface between the last quantum barrier (LQB) and electron-blocking layer (EBL), was demonstrated to remarkably improve the light-emitting efficiency of GaN-based blue light-emitting diodes (LEDs) numerically and experimentally. The improvement was attributed to the enhanced electron-blocking effectiveness by the elevated conduction band nearby the LQB/EBL interface. Nevertheless, the efficiency droop was not mitigated because the decrease of electron-leakage was accompanied by the increase of Auger recombination.
authors.forename: Xiaoli
authors.initials: X
authors.lastname: Ji
authors.forename: Tongbo
authors.initials: T
authors.lastname: Wei
authors.forename: Fuhua
authors.initials: F
authors.lastname: Yang
authors.forename: Hongxi
authors.initials: H
authors.lastname: Lu
authors.forename: Xuecheng
authors.initials: X
authors.lastname: Wei
authors.forename: Ping
authors.initials: P
authors.lastname: Ma
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Yi
authors.forename: Junxi
authors.initials: J
authors.lastname: Wang
authors.forename: Yiping
authors.initials: Y
authors.lastname: Zeng
authors.forename: Guohong
authors.initials: G
authors.lastname: Wang
authors.forename: Jinmin
authors.initials: J
authors.lastname: Li