title: Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode.
abstract: A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO x /Ni/n(+)-Si was proposed to suppress sneak current where TaN/ZrTiO x /Ni can be regarded as a resistive-switching random access memory (RRAM) device while Ni/n(+)-Si acts as an Schottky diode. This is the first RRAM cell structure that employs metal/semiconductor Schottky diode for current rectifying. The 1D1R cell exhibits bipolar switching behavior with SET/RESET voltage close to 1 V without requiring a forming process. More importantly, the cell shows tight resistance distribution for different states, significantly rectifying characteristics with forward/reverse current ratio higher than 10(3) and a resistance ratio larger than 10(3) between two states. Furthermore, the cell also displays desirable reliability performance in terms of long data retention time of up to 10(4) s and robust endurance of 10(5) cycles. Based on the promising characteristics, the four-layer 1D1R structure holds the great potential for next-generation nonvolatile memory technology.
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
authors.forename: Chia-Chun
authors.initials: CC
authors.lastname: Lin
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
authors.forename: Yung-Hsien
authors.initials: YH
authors.lastname: Wu
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
authors.forename: You-Tai
authors.initials: YT
authors.lastname: Chang
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
authors.forename: Cherng-En
authors.initials: CE
authors.lastname: Sun
keywords: 1D1R; Endurance; Metal/semiconductor; RRAM; Rectifying behavior; Retention; Schottky diode; ZrTiOx