title: A printed nanobeam laser on a SiO₂/Si substrate for low-threshold continuous-wave operation.
abstract: A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO₂/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ~6.6 × 0.58 × 0.28 µm(3) (~10.5 (λ/n)3) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 µW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.
authors.forename: Indra
authors.initials: I
authors.lastname: Karnadi
authors.forename: Jaehyeon
authors.initials: J
authors.lastname: Son
authors.forename: Ju-Young
authors.initials: JY
authors.lastname: Kim
authors.forename: Hoon
authors.initials: H
authors.lastname: Jang
authors.forename: Seungwoo
authors.initials: S
authors.lastname: Lee
authors.forename: Ki Soo
authors.initials: KS
authors.lastname: Kim
authors.forename: Bumki
authors.initials: B
authors.lastname: Min
authors.forename: Yong-Hee
authors.initials: YH
authors.lastname: Lee