title: Enhanced electroluminescence using Ta₂O₅/ZnO/HfO₂ asymmetric double heterostructure in ZnO/GaN-based light emitting diodes.
abstract: ZnO/GaN-based light-emitting diodes (LEDs) with improved asymmetric double heterostructure of Ta₂O₅/ZnO/HfO₂ have been fabricated. Electroluminescence (EL) performance has been enhanced by the HfO₂ electron blocking layer and further improved by continuing inserting the Ta₂O₅ hole blocking layer. The origins of the emission have been identified, which indicated that the Ta₂O₅/ZnO/HfO₂ asymmetric structure could more effectively confine carriers in the active i-ZnO layer and meanwhile suppresses of radiation from GaN. This device exhibits superior stability in long-time running. It's hoped that the asymmetric double heterostructure may be helpful for the development of the future ZnO-based LEDs.
authors.forename: Hao
authors.initials: H
authors.lastname: Long
authors.forename: Songzhan
authors.initials: S
authors.lastname: Li
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Mo
authors.forename: Haoning
authors.initials: H
authors.lastname: Wang
authors.forename: Zhao
authors.initials: Z
authors.lastname: Chen
authors.forename: Zhe Chuan
authors.initials: ZC
authors.lastname: Feng
authors.forename: Guojia
authors.initials: G
authors.lastname: Fang