title: Directly modulated buried heterostructure DFB laser on SiO₂/Si substrate fabricated by regrowth of InP using bonded active layer.
abstract: We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO₂/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO₂/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate high-efficiency lasers at a low cost.
authors.forename: Shinji
authors.initials: S
authors.lastname: Matsuo
authors.forename: Takuro
authors.initials: T
authors.lastname: Fujii
authors.forename: Koichi
authors.initials: K
authors.lastname: Hasebe
authors.forename: Koji
authors.initials: K
authors.lastname: Takeda
authors.forename: Tomonari
authors.initials: T
authors.lastname: Sato
authors.forename: Takaaki
authors.initials: T
authors.lastname: Kakitsuka