title: Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells.
abstract: We discuss the influence of V-pits and their energy barrier, originating from its facets of (101¯1) planes, on the luminescence efficiency of InGaN LEDs. Experimental analysis using cathodoluminescence (CL) exhibits that thin facets of V-pits of InGaN quantum wells (QWs) appear to be effective in improving the emission intensity, preventing the injected carriers from recombining non-radiatively with threading dislocations (TDs). Our theoretical calculation based on the self-consistent approach with adopting k⋅p method reveals that higher V-pit energy barrier heights in InGaN QWs more efficiently suppress the non-radiative recombination at TDs, thus enhancing the internal quantum efficiency (IQE).
authors.forename: Jaekyun
authors.initials: J
authors.lastname: Kim
authors.forename: Yong-Hee
authors.initials: YH
authors.lastname: Cho
authors.forename: Dong-Su
authors.initials: DS
authors.lastname: Ko
authors.forename: Xiang-Shu
authors.initials: XS
authors.lastname: Li
authors.forename: Jung-Yeon
authors.initials: JY
authors.lastname: Won
authors.forename: Eunha
authors.initials: E
authors.lastname: Lee
authors.forename: Seoung-Hwan
authors.initials: SH
authors.lastname: Park
authors.forename: Jun-Youn
authors.initials: JY
authors.lastname: Kim
authors.forename: Sungjin
authors.initials: S
authors.lastname: Kim