title: Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer.
abstract: The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of crystalline silicon.
  85.35.Be; 84.60.Jt; 78.67.Bf.
authors.affiliation: Department of Physical Electronics, Tokyo Institute of Technology, 152-8552 Meguro-ku, Tokyo, Japan.
authors.forename: Shigeru
authors.initials: S
authors.lastname: Yamada
authors.affiliation: Department of Physical Electronics, Tokyo Institute of Technology, 152-8552 Meguro-ku, Tokyo, Japan.
authors.forename: Yasuyoshi
authors.initials: Y
authors.lastname: Kurokawa
authors.affiliation: Department of Physical Electronics, Tokyo Institute of Technology, 152-8552 Meguro-ku, Tokyo, Japan.
authors.forename: Shinsuke
authors.initials: S
authors.lastname: Miyajima
authors.affiliation: Department of Physical Electronics, Tokyo Institute of Technology, 152-8552 Meguro-ku, Tokyo, Japan ; Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, 152-8552 Meguro-ku, Tokyo, Japan.
authors.forename: Makoto
authors.initials: M
authors.lastname: Konagai
keywords: Quantum size effect; Silicon nanocrystals; Silicon quantum dot; Solar cells