title: A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer.
abstract: We demonstrate the first germanium-silicon C-band electro-absorption based waveguide modulator array and echelle-grating-based silicon wavelength multiplexer integrated with a digital CMOS driver circuit. A 9-channel, 10Gbps SiGe electro-absorption wavelength-multiplexed modulator array consumed a power of 5.8mW per channel while being modulated at 10.25Gbps by 40nm CMOS drivers delivering peak-to-peak voltage swings of 2V, achieving a modulation energy-efficiency of ~570fJ/bit including drivers. Performance up to 25Gbps on a single-channel SiGe modulator and CMOS driver is also reported.
authors.forename: A V
authors.initials: AV
authors.lastname: Krishnamoorthy
authors.forename: X
authors.initials: X
authors.lastname: Zheng
authors.forename: D
authors.initials: D
authors.lastname: Feng
authors.forename: J
authors.initials: J
authors.lastname: Lexau
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authors.initials: JF
authors.lastname: Buckwalter
authors.forename: H D
authors.initials: HD
authors.lastname: Thacker
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authors.initials: F
authors.lastname: Liu
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authors.initials: Y
authors.lastname: Luo
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authors.lastname: Chang
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authors.lastname: Amberg
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authors.initials: I
authors.lastname: Shubin
authors.forename: S S
authors.initials: SS
authors.lastname: Djordjevic
authors.forename: J H
authors.initials: JH
authors.lastname: Lee
authors.forename: S
authors.initials: S
authors.lastname: Lin
authors.forename: H
authors.initials: H
authors.lastname: Liang
authors.forename: A
authors.initials: A
authors.lastname: Abed
authors.forename: R
authors.initials: R
authors.lastname: Shafiiha
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authors.lastname: Raj
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authors.initials: R
authors.lastname: Ho
authors.forename: M
authors.initials: M
authors.lastname: Asghari
authors.forename: J E
authors.initials: JE
authors.lastname: Cunningham