title: 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.
abstract: We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on Si substrates. InAlAs/GaAs SLSs are found to be more effective than InGaAs/GaAs SLSs in blocking the propagation of threading dislocations generated at the interface between the GaAs buffer layer and the Si substrate. Room-temperature lasing at ~1.27 μm with a threshold current density of 194 A/cm(2) and output power of ~77 mW has been demonstrated for broad-area lasers grown on Si substrates using InAlAs/GaAs dislocation filter layers.
authors.forename: Mingchu
authors.initials: M
authors.lastname: Tang
authors.forename: Siming
authors.initials: S
authors.lastname: Chen
authors.forename: Jiang
authors.initials: J
authors.lastname: Wu
authors.forename: Qi
authors.initials: Q
authors.lastname: Jiang
authors.forename: Vitaliy G
authors.initials: VG
authors.lastname: Dorogan
authors.forename: Mourad
authors.initials: M
authors.lastname: Benamara
authors.forename: Yuriy I
authors.initials: YI
authors.lastname: Mazur
authors.forename: Gregory J
authors.initials: GJ
authors.lastname: Salamo
authors.forename: Alwyn
authors.initials: A
authors.lastname: Seeds
authors.forename: Huiyun
authors.initials: H
authors.lastname: Liu