title: Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes.
abstract: The operating voltage, light output power, and efficiency droops of GaN-based light emitting diodes (LEDs) were improved by introducing Mg-doped AlGaN/InGaN superlattice (SL) electron blocking layer (EBL). The thicker InGaN layers of AlGaN/InGaN SL EBL could have a larger effective electron potential height and lower effective hole potential height than that of AlGaN EBL. This thicker InGaN layer could prevent electron leakage into the p-region of LEDs and improve hole injection efficiency to achieve a higher light output power and less efficiency droops with the injection current. The low lateral resistivity of Mg-doped AlGaN/InGaN SL would have superior current spreading at high current injection.
authors.forename: Chun-Ta
authors.initials: CT
authors.lastname: Yu
authors.forename: Wei-Chih
authors.initials: WC
authors.lastname: Lai
authors.forename: Cheng-Hsiung
authors.initials: CH
authors.lastname: Yen
authors.forename: Shoou-Jinn
authors.initials: SJ
authors.lastname: Chang