title: Temperature dependence of laser-induced micro/nanostructures for femtosecond laser irradiation of silicon.
abstract: The temperature dependence (from 25°C to 350°C) of laser-induced micro/nanostructures for multiple linearly polarized femtosecond laser pulse (pulse duration τ=35  fs, wavelength λ=800  nm) irradiation of silicon in air is studied experimentally. Distinct micro/nanostructures are fabricated at elevated temperature. Low spatial frequency, laser-induced periodic ripple structures (LSFL), which are perpendicular to the polarization of the laser beam, are formed at all temperatures. Micrometer-size grooves, which are oriented perpendicular to the LSFL ripples, have been observed in the central part of the irradiated area above 150°C. The threshold to fabricate the LSFL ripples goes from 1.65 to 2  kJ/m2 while the temperature of the substrate increases from 25°C to 350°C. The possible mechanism of the temperature dependence of the micro/nanostructure generation is also discussed. These results demonstrate that temperature is an important parameter to be tuned to tailor the micro/nanostructure fabrication.
authors.forename: Guoliang
authors.initials: G
authors.lastname: Deng
authors.forename: Guoying
authors.initials: G
authors.lastname: Feng
authors.forename: Kui
authors.initials: K
authors.lastname: Liu
authors.forename: Shouhuan
authors.initials: S
authors.lastname: Zhou