title: Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s.
abstract: We have fabricated a waveguide integrated monolithic silicon infrared detector. The photodiode consists of a p-i-n junction across a silicon-on-insulator (SOI) rib waveguide. Absorption is due to surface-states at the silicon/air interface of the waveguide. A 2 mm long detector shows a response of 0.045 A/W (calculated as a function of coupled light) and is capable of operation at 10 Gb/s at a reverse bias voltage of 2 V.
authors.forename: Jason J
authors.initials: JJ
authors.lastname: Ackert
authors.forename: Abdullah S
authors.initials: AS
authors.lastname: Karar
authors.forename: John C
authors.initials: JC
authors.lastname: Cartledge
authors.forename: Paul E
authors.initials: PE
authors.lastname: Jessop
authors.forename: Andrew P
authors.initials: AP
authors.lastname: Knights