title: A novel integrated structure of thin film GaN LED with ultra-low thermal resistance.
abstract: This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is directly mounted on package submount. The shortest thermal path structure from junction to package submount achieves the lowest thermal resistance of 1.65 K/W for LED package. Experimental results indicate that low thermal resistance significant improved forward current up to 4.6A with 1.125 × 1.125 mm² LED chip size.
authors.forename: Shih-Yi
authors.initials: SY
authors.lastname: Wen
authors.forename: Hung-Lieh
authors.initials: HL
authors.lastname: Hu
authors.forename: Yao-Jun
authors.initials: YJ
authors.lastname: Tsai
authors.forename: Chen-Peng
authors.initials: CP
authors.lastname: Hsu
authors.forename: Re-Ching
authors.initials: RC
authors.lastname: Lin
authors.forename: Ray Hua
authors.initials: RH
authors.lastname: Horng