title: Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice.
abstract: We experimentally studied the magneto-photocurrents generated by direct interband transition in InAs/GaSb type II superlattice. By varying the magnetic field direction, we observed that an in-plane magnetic field induces a photocurrent linearly proportional to the magnetic field; however, a magnetic field tilted to the sample plane induces a photocurrent presenting quadratic magnetic field dependence. The magneto-photocurrents in both conditions are insensitive to the polarization state of the incident light. Theoretical models involving excitation, relaxation and Hall effect are utilized to explain the experimental results.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Tshinghua East Road, Haidian District, Beijing 100083, China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Li
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Tshinghua East Road, Haidian District, Beijing 100083, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Tshinghua East Road, Haidian District, Beijing 100083, China.
authors.forename: Chongyun
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Tshinghua East Road, Haidian District, Beijing 100083, China.
authors.forename: Laipan
authors.initials: L
authors.lastname: Zhu
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Tshinghua East Road, Haidian District, Beijing 100083, China.
authors.forename: Xudong
authors.initials: X
authors.lastname: Qin
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Tshinghua East Road, Haidian District, Beijing 100083, China.
authors.forename: Hansong
authors.initials: H
authors.lastname: Gao
authors.affiliation: Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Tshinghua East Road, Haidian District, Beijing 100083, China.
authors.forename: Wenquan
authors.initials: W
authors.lastname: Ma
authors.affiliation: Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Tshinghua East Road, Haidian District, Beijing 100083, China.
authors.forename: Xiaolu
authors.initials: X
authors.lastname: Guo
authors.affiliation: Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Tshinghua East Road, Haidian District, Beijing 100083, China.
authors.forename: Yanhua
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Tshinghua East Road, Haidian District, Beijing 100083, China.
authors.forename: Yonghai
authors.initials: Y
authors.lastname: Chen
keywords: Asymmetric excitation and relaxation; Magneto-photocurrents; Spin-orbit interaction