title: Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods.
abstract: Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs). In this paper, we report the suppression of efficiency droop induced by the process of density-activated defect recombination in nanorod structures of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that such improvement is a net effect that the lateral carrier confinement overcomes the increased surface trapping introduced during fabrication.
authors.forename: Chentian
authors.initials: C
authors.lastname: Shi
authors.forename: Chunfeng
authors.initials: C
authors.lastname: Zhang
authors.forename: Fan
authors.initials: F
authors.lastname: Yang
authors.forename: Min Joo
authors.initials: MJ
authors.lastname: Park
authors.forename: Joon Seop
authors.initials: JS
authors.lastname: Kwak
authors.forename: Sukkoo
authors.initials: S
authors.lastname: Jung
authors.forename: Yoon-Ho
authors.initials: YH
authors.lastname: Choi
authors.forename: Xiaoyong
authors.initials: X
authors.lastname: Wang
authors.forename: Min
authors.initials: M
authors.lastname: Xiao