title: GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer.
abstract: We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 °C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Ω·cm²) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact.
authors.forename: Wei-Chih
authors.initials: WC
authors.lastname: Lai
authors.forename: Chih-Nan
authors.initials: CN
authors.lastname: Lin
authors.forename: Yi-Chun
authors.initials: YC
authors.lastname: Lai
authors.forename: Peichen
authors.initials: P
authors.lastname: Yu
authors.forename: Gou Chung
authors.initials: GC
authors.lastname: Chi
authors.forename: Shoou-Jinn
authors.initials: SJ
authors.lastname: Chang