title: Integrated silicon modulator based on microring array assisted MZI.
abstract: A silicon modulator with microring array assisted MZI is experimentally demonstrated on silicon-on-insulator wafer through CMOS-compatible process. The footprint of the whole modulator is about 600 μm(2). With forward-biased current-driven p-n junction, the 3-dB modulation bandwidth is ~2GHz. Furthermore, the impact of ambient temperature is minified with the help of MZI. Within temperature range of 10 - 70 °C, the maximum divergence of modulation curve is less than ~3 dB.
authors.forename: Xiangdong
authors.initials: X
authors.lastname: Li
authors.forename: Xue
authors.initials: X
authors.lastname: Feng
authors.forename: Kaiyu
authors.initials: K
authors.lastname: Cui
authors.forename: Fang
authors.initials: F
authors.lastname: Liu
authors.forename: Yidong
authors.initials: Y
authors.lastname: Huang