title: Novel synaptic memory device for neuromorphic computing.
abstract: This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO₂ material. The mechanism behind reconfiguration was studied and a unified model is presented to explain the underlying device physics. The model was then utilized to show the application of these devices in speech recognition. A comparison between a 20 nm × 20 nm sized synaptic memory device with that of a state-of-the-art VLSI SRAM synapse showed ~10× reduction in area and >10(6) times reduction in the power consumption per learning cycle.
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Toledo, University of Toledo, OH 43606, USA.
authors.forename: Saptarshi
authors.initials: S
authors.lastname: Mandal
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Toledo, University of Toledo, OH 43606, USA.
authors.forename: Ammaarah
authors.initials: A
authors.lastname: El-Amin
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Toledo, University of Toledo, OH 43606, USA.
authors.forename: Kaitlyn
authors.initials: K
authors.lastname: Alexander
authors.affiliation: Department of Electrical Engineering, Indian Institute of Technology, Bombay, India.
authors.forename: Bipin
authors.initials: B
authors.lastname: Rajendran
authors.affiliation: Department of Electrical Engineering and Computer Science, University of Toledo, University of Toledo, OH 43606, USA.
authors.forename: Rashmi
authors.initials: R
authors.lastname: Jha
mesh_terms: D000465:Algorithms; D000818:Animals; D019295:Computational Biology / Q000295:instrumentation / Q000379:methods*; D006195:Hafnium / Q000737:chemistry; D006801:Humans; D008345:Manganese / Q000737:chemistry; D008568:Memory / Q000502:physiology*; D008959:Models, Neurological; D016571:Neural Networks, Computer; D009482:Neurophysiology / Q000295:instrumentation / Q000379:methods; D010087:Oxides / Q000737:chemistry; D013569:Synapses / Q000502:physiology*
chemical_list: D010087:Oxides; C545179:hafnium oxide; D008345:Manganese; D006195:Hafnium