title: Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN.
abstract: Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN wells (generated by digital InN/GaN growth from temperature-dependent integrated photoluminescence intensity) is larger than the activation energy (25 meV) of conventionally grown thin InGaN wells. Moreover, thick InGaN wells with digitally grown InN/GaN exhibit a smaller σ value (the degree of localization effects) of 19 meV than that of conventionally grown thin InGaN wells (23 meV). Compared with green light-emitting diodes (LEDs) with conventional thin InGaN wells, the improvement in 20-A/cm² output power for LEDs containing thick InGaN wells with digitally grown InN/GaN is approximately 23%.
authors.forename: Chun-Ta
authors.initials: CT
authors.lastname: Yu
authors.forename: Wei-Chih
authors.initials: WC
authors.lastname: Lai
authors.forename: Cheng-Hsiung
authors.initials: CH
authors.lastname: Yen
authors.forename: Hsu-Cheng
authors.initials: HC
authors.lastname: Hsu
authors.forename: Shoou-Jinn
authors.initials: SJ
authors.lastname: Chang