title: Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques.
abstract: The simple self-aligned photolithography technique and laser interference photolithography technique were proposed and utilized to fabricate multiple-gate ZnO metal-oxide-semiconductor field-effect transistors (MOSFETs). Since the multiple-gate structure could improve the electrical field distribution along the ZnO channel, the performance of the ZnO MOSFETs could be enhanced. The performance of the multiple-gate ZnO MOSFETs was better than that of the conventional single-gate ZnO MOSFETs. The higher the drain-source saturation current (12.41 mA/mm), the higher the transconductance (5.35 mS/mm) and the lower the anomalous off-current (5.7 μA/mm) for the multiple-gate ZnO MOSFETs were obtained.
authors.affiliation: Department of Photonics, Research Center Energy Technology and Strategy, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
authors.forename: Hsin-Ying
authors.initials: HY
authors.lastname: Lee
authors.affiliation: Department of Photonics, Research Center Energy Technology and Strategy, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
authors.forename: Hung-Lin
authors.initials: HL
authors.lastname: Huang
authors.affiliation: Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.
authors.forename: Chun-Yen
authors.initials: CY
authors.lastname: Tseng
keywords: Laser interference photolithography; Multiple-gate metal-oxide-semiconductor field-effect transistors; Self-aligned photolithography; Short channel effect; Zinc oxide thin film