title: A high-responsivity photodetector absent metal-germanium direct contact.
abstract: We report a Ge-on-Si photodetector without doped Ge or Ge-metal contacts. Despite the simplified fabrication process, the device shows a responsivity of 1.14 A/W at -4 V reverse bias and 1.44 A/W at -12V, at 1550 nm wavelength. Dark current is less than 1µA under both bias conditions. We also demonstrate open eye diagrams at 40Gb/s.
authors.forename: Yi
authors.initials: Y
authors.lastname: Zhang
authors.forename: Shuyu
authors.initials: S
authors.lastname: Yang
authors.forename: Yisu
authors.initials: Y
authors.lastname: Yang
authors.forename: Michael
authors.initials: M
authors.lastname: Gould
authors.forename: Noam
authors.initials: N
authors.lastname: Ophir
authors.forename: Andy Eu-Jin
authors.initials: AE
authors.lastname: Lim
authors.forename: Guo-Qiang
authors.initials: GQ
authors.lastname: Lo
authors.forename: Peter
authors.initials: P
authors.lastname: Magill
authors.forename: Keren
authors.initials: K
authors.lastname: Bergman
authors.forename: Tom
authors.initials: T
authors.lastname: Baehr-Jones
authors.forename: Michael
authors.initials: M
authors.lastname: Hochberg