title: InPBi single crystals grown by molecular beam epitaxy.
abstract: InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 μm which can't be explained by the existing theory.
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.
authors: K
authors: K
authors: Wang
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.
authors: Y
authors: Y
authors: Gu
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.
authors: H F
authors: HF
authors: Zhou
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.
authors: L Y
authors: LY
authors: Zhang
authors: Qufu Normal University, 57 West Jinxuan Road, Qufu 273165, China.
authors: C Z
authors: CZ
authors: Kang
authors: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin D-10117, Germany.
authors: M J
authors: MJ
authors: Wu
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.
authors: W W
authors: WW
authors: Pan
authors: State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, 10 West Tucheng Road, Beijing 100876, China.
authors: P F
authors: PF
authors: Lu
authors: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.
authors: Q
authors: Q
authors: Gong
authors: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China [2] Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden.
authors: S M
authors: SM
authors: Wang