title: Doping dependence of the Raman spectrum of defected graphene.
abstract: We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7 eV, as directly monitored by in situ Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level.
authors: Cambridge Graphene Centre, University of Cambridge , Cambridge CB3 0FA, U.K.
authors: Matteo
authors: M
authors: Bruna
authors: Anna K
authors: AK
authors: Ott
authors: Mari
authors: M
authors: Ijäs
authors: Duhee
authors: D
authors: Yoon
authors: Ugo
authors: U
authors: Sassi
authors: Andrea C
authors: AC
authors: Ferrari