title: Facile synthesis and photoluminescence spectroscopy of 3D-triangular GaN nano prism islands.
abstract: We report a strategy for fabrication of 3D triangular GaN nano prism islands (TGNPI) grown on Ga/Si(553) substrate at low temperature by N2(+) ions implantation using a sputtering gun technique. The annealing of Ga/Si(553) (600 °C) followed by nitridation (2 keV) shows the formation of high quality GaN TGNPI cross-section. TGNPI morphology has been confirmed by atomic force microscopy. Furthermore, these nano prism islands exhibit prominent ultra-violet luminescence peaking at 366 nm upon 325 nm excitation wavelength along with a low intensity yellow luminescence broad peak at 545 nm which characterizes low defects density TGNPI. Furthermore, the time-resolved spectroscopy of luminescent TGNPI in nanoseconds holds promise for its futuristic application in next generation UV-based sensors as well as many portable optoelectronic devices.
authors: Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr K S Krishnan Road, New Delhi-110012, India. govind@nplindia.org bipinbhu@yaoo.com.
authors: Mukesh
authors: M
authors: Kumar
authors: S K
authors: SK
authors: Pasha
authors: T C
authors: TC
authors: Shibin Krishna
authors: Avanish Pratap
authors: AP
authors: Singh
authors: Pawan
authors: P
authors: Kumar
authors: Bipin Kumar
authors: BK
authors: Gupta
authors: Govind
authors: G
authors: Gupta