title: High-efficiency dual-absorption InGaAs/InP photodetector incorporating GaAs/AlGaAs Bragg reflectors.
abstract: A reflection-enhanced dual-absorption InP-PIN/GaAs-DBR photodetector was fabricated and characterized. The photodetector is monolithically integrated using a heteroepitaxy growth of an InGaAs/InP dual-absorption "PINIP" structure on the GaAs/AlGaAs Bragg reflectors. These features lead to an increase in quantum efficiency over a wide wavelength range while maintaining a high speed. The measured quantum efficiency was increased by 48.8% in comparison with that without reflectors. A quantum efficiency of 64% at a wavelength of 1522 nm and a 3 dB bandwidth of 26 GHz at a reverse bias of 3 V were simultaneously obtained in the device.
authors: Xiaofeng
authors: X
authors: Duan
authors: Yongqing
authors: Y
authors: Huang
authors: Yufeng
authors: Y
authors: Shang
authors: Jun
authors: J
authors: Wang
authors: Xiaomin
authors: X
authors: Ren