title: Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change material.
abstract: We present the mechanisms underlying the redshifted and blueshifted photoluminescence (PL) of quantum dots (QDs) upon amorphization of phase change material (PCM). We calculated the stress and energy shift distribution induced by volume expansion using finite element method. Simulation result reveals that redshift is obtained beneath the flat part of amorphous mark, while blueshift is obtained beneath the edge region of amorphous mark. Simulation result is accompanied by two experimental studies; two-dimensional PL intensity mapping of InAs/InP QD sample deposited by a layer of PCM, and an analysis on the relationship between PL intensity ratio and energy shift were performed.
authors: Nurrul Syafawati Binti
authors: NS
authors: Humam
authors: Yu
authors: Y
authors: Sato
authors: Motoki
authors: M
authors: Takahashi
authors: Shohei
authors: S
authors: Kanazawa
authors: Nobuhiro
authors: N
authors: Tsumori
authors: Philippe
authors: P
authors: Regreny
authors: Michel
authors: M
authors: Gendry
authors: Toshiharu
authors: T
authors: Saiki