title: Efficient blue light emission from In0.16Ga0.84N/GaN multiple quantum wells excited by 2.48-μm femtosecond laser pulses.
abstract: We report on the efficient blue light emission from In0.16Ga0.84N/GaN multiple quantum wells excited by femtosecond laser pulses with long wavelengths ranging from 1.24 to 2.48 μm. It is found that the trap states in GaN barrier layers lead to an efficient cascade multiphoton absorption in which the carriers are generated through simultaneous absorption of n (n=1 and 2) photons to the trap states, followed by simultaneous absorption of m (m=3, 4, and 5) photons to the conduction band. The dependence of the upconversion luminescence on excitation intensity exhibits a slope between n and n+m, which is in good agreement with the prediction based on the rate equation model.
authors: Mao-Hui
authors: MH
authors: Yuan
authors: Hui
authors: H
authors: Li
authors: Jian-Hua
authors: JH
authors: Zeng
authors: Hai-Hua
authors: HH
authors: Fan
authors: Qiao-Feng
authors: QF
authors: Dai
authors: Sheng
authors: S
authors: Lan
authors: Shu-Ti
authors: ST
authors: Li