title: Two-dimensional superconductivity at the interface of a Bi2Te3/FeTe heterostructure.
abstract: The realization of superconductivity at the interface between a topological insulator and an iron-chalcogenide compound is highly attractive for exploring several recent theoretical predictions involving these two new classes of materials. Here we report transport measurements on a Bi2Te3/FeTe heterostructure fabricated via van der Waals epitaxy, which demonstrate superconductivity at the interface, which is induced by the Bi2Te3 epilayer with thickness even down to one quintuple layer, though there is no clear-cut evidence that the observed superconductivity is induced by the topological surface states. The two-dimensional nature of the observed superconductivity with the highest transition temperature around 12 K was verified by the existence of a Berezinsky-Kosterlitz-Thouless transition and the diverging ratio of in-plane to out-plane upper critical field on approaching the superconducting transition temperature. With the combination of interface superconductivity and Dirac surface states of Bi2Te3, the heterostructure studied in this work provides a novel platform for realizing Majorana fermions.
authors: 1] William Mong Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China [2] Nano Science and Technology Program, the Hong Kong University of Science and Technology, Hong Kong, China [3].
authors: Qing Lin
authors: QL
authors: He
authors: 1] Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China [2].
authors: Hongchao
authors: H
authors: Liu
authors: 1] William Mong Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China [2] Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China.
authors: Mingquan
authors: M
authors: He
authors: 1] William Mong Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China [2] Nano Science and Technology Program, the Hong Kong University of Science and Technology, Hong Kong, China.
authors: Ying Hoi
authors: YH
authors: Lai
authors: 1] Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China [2] Department of Physics, South University of Science and Technology of China, Shenzhen, 518055 Guangdong, China.
authors: Hongtao
authors: H
authors: He
authors: Department of Physics, South University of Science and Technology of China, Shenzhen, 518055 Guangdong, China.
authors: Gan
authors: G
authors: Wang
authors: Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China.
authors: Kam Tuen
authors: KT
authors: Law
authors: 1] William Mong Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China [2] Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China.
authors: Rolf
authors: R
authors: Lortz
authors: 1] William Mong Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China [2] Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China.
authors: Jiannong
authors: J
authors: Wang
authors: 1] William Mong Institute of Nano Science and Technology, the Hong Kong University of Science and Technology, Hong Kong, China [2] Nano Science and Technology Program, the Hong Kong University of Science and Technology, Hong Kong, China [3] Department of Physics, the Hong Kong University of Science and Technology, Hong Kong, China.
authors: Iam Keong
authors: IK
authors: Sou