title: Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.
abstract: Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.
authors: Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology , Guangzhou 510640, P.R. China.
authors: Dongxiang
authors: D
authors: Luo
authors: Mingjie
authors: M
authors: Zhao
authors: Miao
authors: M
authors: Xu
authors: Min
authors: M
authors: Li
authors: Zikai
authors: Z
authors: Chen
authors: Lang
authors: L
authors: Wang
authors: Jianhua
authors: J
authors: Zou
authors: Hong
authors: H
authors: Tao
authors: Lei
authors: L
authors: Wang
authors: Junbiao
authors: J
authors: Peng