title: Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes.
abstract: Pristine graphene and a graphene interlayer inserted between indium tin oxide (ITO) and p-GaN have been analyzed and compared with ITO, which is a typical current spreading layer in lateral GaN LEDs. Beyond a certain current injection, the pristine graphene current spreading layer (CSL) malfunctioned due to Joule heat that originated from the high sheet resistance and low work function of the CSL. However, by combining the graphene and the ITO to improve the sheet resistance, it was found to be possible to solve the malfunctioning phenomenon. Moreover, the light output power of an LED with a graphene interlayer was stronger than that of an LED using ITO or graphene CSL. We were able to identify that the improvement originated from the enhanced current spreading by inspecting the contact and conducting the simulation.
authors: Jung-Hong
authors: JH
authors: Min
authors: Myungwoo
authors: M
authors: Son
authors: Si-Young
authors: SY
authors: Bae
authors: Jun-Yeob
authors: JY
authors: Lee
authors: Joosun
authors: J
authors: Yun
authors: Min-Jae
authors: MJ
authors: Maeng
authors: Dae-Gyeon
authors: DG
authors: Kwon
authors: Yongsup
authors: Y
authors: Park
authors: Jong-In
authors: JI
authors: Shim
authors: Moon-Ho
authors: MH
authors: Ham
authors: Dong-Seon
authors: DS
authors: Lee