title: Selective removal of metallic single-walled carbon nanotubes in full length by organic film-assisted electrical breakdown.
abstract: An organic film-assisted electrical breakdown technique is proposed to selectively remove metallic (m-) single-walled carbon nanotubes (SWNTs) in full length towards creation of pure semiconducting SWNT arrays which are available for the large-scale fabrication of field effect transistors (FETs). The electrical breakdown of horizontally aligned SWNT arrays embedded in organic films resulted in a maximum removal length of 16.4 μm. The removal of SWNTs was confirmed using scanning electron microscopy and Raman mapping measurements. The on/off ratios of FETs were improved up to ca. 10,000, similar to that achieved for in-air breakdown. The experimental results suggest that exothermic oxidation of organic films induces propagation of oxidation reaction, hence the long-length removal of m-SWNTs.
authors: Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan. maruyama@photon.t.u-tokyo.ac.jp chiashi@photon.t.u-tokyo.ac.jp.
authors: Keigo
authors: K
authors: Otsuka
authors: Taiki
authors: T
authors: Inoue
authors: Shohei
authors: S
authors: Chiashi
authors: Shigeo
authors: S
authors: Maruyama