title: Reversible electric-field control of magnetization at oxide interfaces.
abstract: Electric-field control of magnetism has remained a major challenge which would greatly impact data storage technology. Although progress in this direction has been recently achieved, reversible magnetization switching by an electric field requires the assistance of a bias magnetic field. Here we take advantage of the novel electronic phenomena emerging at interfaces between correlated oxides and demonstrate reversible, voltage-driven magnetization switching without magnetic field. Sandwiching a non-superconducting cuprate between two manganese oxide layers, we find a novel form of magnetoelectric coupling arising from the orbital reconstruction at the interface between interfacial Mn spins and localized states in the CuO2 planes. This results in a ferromagnetic coupling between the manganite layers that can be controlled by a voltage. Consequently, magnetic tunnel junctions can be electrically toggled between two magnetization states, and the corresponding spin-dependent resistance states, in the absence of a magnetic field.
authors: 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2].
authors: F A
authors: FA
authors: Cuellar
authors: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors: Y H
authors: YH
authors: Liu
authors: 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors: J
authors: J
authors: Salafranca
authors: GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain.
authors: N
authors: N
authors: Nemes
authors: GMME Departamento de Tecnologia Electronica, ETSIT, Universidad Politecnica de Madrid, 28040 Madrid, Spain.
authors: E
authors: E
authors: Iborra
authors: 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense Madrid, Sor Juana Inés de la Cruz, 3, ES-28049 Madrid, Spain.
authors: G
authors: G
authors: Sanchez-Santolino
authors: 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors: M
authors: M
authors: Varela
authors: 1] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense Madrid, Sor Juana Inés de la Cruz, 3, ES-28049 Madrid, Spain [2] Instituto de Ciencia de Materiales de Madrid, 28049 Madrid, Spain.
authors: M
authors: M
authors: Garcia  Hernandez
authors: Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors: J W
authors: JW
authors: Freeland
authors: Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
authors: M
authors: M
authors: Zhernenkov
authors: Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
authors: M R
authors: MR
authors: Fitzsimmons
authors: Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors: S
authors: S
authors: Okamoto
authors: Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, USA.
authors: S J
authors: SJ
authors: Pennycook
authors: 1] Unité Mixte de Physique CNRS/Thales, 1 avenue Augustin Fresnel, Campus de l'Ecole Polytechnique, 91767 Palaiseau, France [2] Université Paris-Sud, 91905 Orsay, France.
authors: M
authors: M
authors: Bibes
authors: 1] Unité Mixte de Physique CNRS/Thales, 1 avenue Augustin Fresnel, Campus de l'Ecole Polytechnique, 91767 Palaiseau, France [2] Université Paris-Sud, 91905 Orsay, France.
authors: A
authors: A
authors: Barthélémy
authors: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors: S G E
authors: SG
authors: te Velthuis
authors: 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense Madrid, Sor Juana Inés de la Cruz, 3, ES-28049 Madrid, Spain.
authors: Z
authors: Z
authors: Sefrioui
authors: 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense Madrid, Sor Juana Inés de la Cruz, 3, ES-28049 Madrid, Spain.
authors: C
authors: C
authors: Leon
authors: 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense Madrid, Sor Juana Inés de la Cruz, 3, ES-28049 Madrid, Spain.
authors: J
authors: J
authors: Santamaria