title: Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon.
abstract: A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm(2), 3 × 10(-17) cm(2), 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics.
authors: Center for Photonics and Multiscale Nanomaterials, 1301 Beal Avenue, Department of Electrical Engineering and Computer Science, University of Michigan , Ann Arbor, Michigan 48109, United States.
authors: Thomas
authors: T
authors: Frost
authors: Shafat
authors: S
authors: Jahangir
authors: Ethan
authors: E
authors: Stark
authors: Saniya
authors: S
authors: Deshpande
authors: Arnab
authors: A
authors: Hazari
authors: Chao
authors: C
authors: Zhao
authors: Boon S
authors: BS
authors: Ooi
authors: Pallab
authors: P
authors: Bhattacharya