title: Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures.
abstract: We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.9 μm height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272% and 5.1% greater than flat- and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN-air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations.
authors: Su Jin
authors: SJ
authors: Kim
authors: Kyeong Heon
authors: KH
authors: Kim
authors: Ho Young
authors: HY
authors: Chung
authors: Hee Woong
authors: HW
authors: Shin
authors: Byeong Ryong
authors: BR
authors: Lee
authors: Tak
authors: T
authors: Jeong
authors: Hyung Jo
authors: HJ
authors: Park
authors: Tae Geun
authors: TG
authors: Kim