title: Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering.
abstract: InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorganic vapor phase epitaxy on single-crystal wafers. If we can utilize a low-cost epitaxial growth process, such as sputtering on large-area substrates, we can fabricate large-area InGaN light-emitting displays. Here, we report the growth of GaN (0001) and InGaN (0001) films on amorphous SiO2 by pulsed sputtering deposition. We found that using multilayer graphene buffer layers allows the growth of highly c-axis-oriented GaN films even on amorphous substrates. We fabricated red, green, and blue InGaN LEDs and confirmed their successful operation. This successful fabrication of full-color InGaN LEDs on amorphous substrates by sputtering indicates that the technique is quite promising for future large-area light-emitting displays on amorphous substrates.
authors: Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.
authors: Jeong Woo
authors: JW
authors: Shon
authors: Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.
authors: Jitsuo
authors: J
authors: Ohta
authors: Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.
authors: Kohei
authors: K
authors: Ueno
authors: Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.
authors: Atsushi
authors: A
authors: Kobayashi
authors: 1] Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan [2] CREST, Japan Science and Technology Agency, Tokyo 102-0075, Japan.
authors: Hiroshi
authors: H
authors: Fujioka