title: Graphene/Silicon heterojunction Schottky diode for vapors sensing using impedance spectroscopy.
abstract: A graphene(G)/Silicon(Si) heterojunction Schottky diode and a simple method that evaluates its electrical response to different chemical vapors using electrochemical impedance spectroscopy (EIS) are implemented. To study the impedance response of the device of a given vapor, relative impedance change (RIC) as a function of the frequency is evaluated. The minimum value of RIC for different vapors corresponds to different frequency values (18.7, 12.9 and 10.7 KHz for chloroform, phenol, and methanol vapors respectively). The impedance responses to phenol, beside other gases used as model analytes for different vapor concentrations are studied. The equivalent circuit of the device is obtained and simplified, using data fitting from the extracted values of resistances and capacitances. The resistance corresponding to interphase G/Si is used as a parameter to compare the performance of this device upon different phenol concentrations and a high reproducibility with a 4.4% relative standard deviation is obtained. The efficiency of the device fabrication, its selectivity, reproducibility and easy measurement mode using EIS makes the developed system an interesting alternative for gases detection for environmental monitoring and other industrial applications.
authors: Department of electrical Engineering, Amirkabir University of Technology, Tehran, Iran.
authors: Ali
authors: A
authors: Fattah
authors: Saeid
authors: S
authors: Khatami
authors: Carmen C
authors: CC
authors: Mayorga-Martinez
authors: Mariana
authors: M
authors: Medina-Sánchez
authors: Luis
authors: L
authors: Baptista-Pires
authors: Arben
authors: A
authors: Merkoçi
keywords: chemical vapors sensors; electrochemical impedance spectroscopy; graphene; heterojunction schottky diode