title: Self-assembly and horizontal orientation growth of VO2 nanowires.
abstract: Single-crystalline vanadium dioxide (VO2) nanostructures have attracted an intense research interest recently because of their unique single-domain metal-insulator phase transition property. Synthesis of these nanostructures in the past was limited in density, alignment, or single-crystallinity. The assembly of VO2 nanowires (NWs) is desirable for a "bottom-up" approach to the engineering of intricate structures using nanoscale building blocks. Here, we report the successful synthesis of horizontally aligned VO2 NWs with a dense growth mode in the [1-100]quartz direction of a polished x-cut quartz surface using a simple vapor transport method. Our strategy of controlled growth of VO2 NWs promisingly paves the way for designing novel metal-insulator transition devices based on VO2 NWs.
authors: Department of Materials Science and Engineering, South University of Science and Technology, Shenzhen 518055, China.
authors: Chun
authors: C
authors: Cheng
authors: National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors: Hua
authors: H
authors: Guo
authors: School of Computing, Engineering and Mathematics, University of Western Sydney, Kingswood, NSW 2751, Australia.
authors: Abbas
authors: A
authors: Amini
authors: Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA.
authors: Kai
authors: K
authors: Liu
authors: Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA.
authors: Deyi
authors: D
authors: Fu
authors: Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA.
authors: Jian
authors: J
authors: Zou
authors: Wuhan National Laboratory for Optoelectronics (WNLO) and the School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
authors: Haisheng
authors: H
authors: Song