title: Heterojunction hybrid devices from vapor phase grown MoS2.
abstract: We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS2) layer transferred onto p-type silicon. The fabrication is scalable as the MoS2 is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS2 layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS2. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.
authors: 1] School of Chemistry, Trinity College Dublin, Dublin 2, Ireland [2] Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and BioEngineering Research (AMBER) Centre, Trinity College Dublin, Dublin 2, Ireland.
authors: Chanyoung
authors: C
authors: Yim
authors: 1] School of Chemistry, Trinity College Dublin, Dublin 2, Ireland [2] Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and BioEngineering Research (AMBER) Centre, Trinity College Dublin, Dublin 2, Ireland.
authors: Maria
authors: M
authors: O'Brien
authors: Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and BioEngineering Research (AMBER) Centre, Trinity College Dublin, Dublin 2, Ireland.
authors: Niall
authors: N
authors: McEvoy
authors: University of Siegen, Hölderlinstrasse 3, 57076 Siegen, Germany.
authors: Sarah
authors: S
authors: Riazimehr
authors: University of Siegen, Hölderlinstrasse 3, 57076 Siegen, Germany.
authors: Heiko
authors: H
authors: Schäfer-Eberwein
authors: University of Siegen, Hölderlinstrasse 3, 57076 Siegen, Germany.
authors: Andreas
authors: A
authors: Bablich
authors: Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via G. Caruso 16, 56122 Pisa, Italy.
authors: Ravinder
authors: R
authors: Pawar
authors: Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via G. Caruso 16, 56122 Pisa, Italy.
authors: Giuseppe
authors: G
authors: Iannaccone
authors: Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and BioEngineering Research (AMBER) Centre, Trinity College Dublin, Dublin 2, Ireland.
authors: Clive
authors: C
authors: Downing
authors: Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via G. Caruso 16, 56122 Pisa, Italy.
authors: Gianluca
authors: G
authors: Fiori
authors: University of Siegen, Hölderlinstrasse 3, 57076 Siegen, Germany.
authors: Max C
authors: MC
authors: Lemme
authors: 1] School of Chemistry, Trinity College Dublin, Dublin 2, Ireland [2] Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and BioEngineering Research (AMBER) Centre, Trinity College Dublin, Dublin 2, Ireland.
authors: Georg S
authors: GS
authors: Duesberg