title: Polarized photocurrent response in black phosphorus field-effect transistors.
abstract: We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements. Our results reveal that the photocurrent signals at BP-electrode junctions are mainly attributed to the photovoltaic effect in the off-state and photothermoelectric effect in the on-state, and their anisotropic feature primarily results from the directional-dependent absorption of BP crystals.
authors: Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, USA. yaqiong.xu@vanderbilt.edu.
authors: Tu
authors: T
authors: Hong
authors: Bhim
authors: B
authors: Chamlagain
authors: Wenzhi
authors: W
authors: Lin
authors: Hsun-Jen
authors: HJ
authors: Chuang
authors: Minghu
authors: M
authors: Pan
authors: Zhixian
authors: Z
authors: Zhou
authors: Ya-Qiong
authors: YQ
authors: Xu