title: Spin nano-oscillator-based wireless communication.
abstract: Spin-torque nano-oscillators (STNOs) have outstanding advantages of a high degree of compactness, high-frequency tunability, and good compatibility with the standard complementary metal-oxide-semiconductor process, which offer prospects for future wireless communication. There have as yet been no reports on wireless communication using STNOs, since the STNOs also have notable disadvantages such as lower output power and poorer spectral purity in comparison with those of LC voltage-controlled oscillators. Here we show that wireless communication is achieved by a proper choice of modulation scheme despite these drawbacks of STNOs. By adopting direct binary amplitude shift keying modulation and non-coherent demodulation, we demonstrate STNO-based wireless communication with 200-kbps data rate at a distance of 1 m between transmitter and receiver. It is shown, from the analysis of STNO noise, that the maximum data rate can be extended up to 1.48 Gbps with 1-ns turn-on time. For the fabricated STNO, the maximum data rate is 5 Mbps which is limited by the rise time measured in the total system. The result will provide a viable route to real microwave application of STNOs.
authors: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea.
authors: Hyun Seok
authors: HS
authors: Choi
authors: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea.
authors: Sun Yool
authors: SY
authors: Kang
authors: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea.
authors: Seong Jun
authors: SJ
authors: Cho
authors: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea.
authors: Inn-Yeal
authors: IY
authors: Oh
authors: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea.
authors: Mincheol
authors: M
authors: Shin
authors: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea.
authors: Hyuncheol
authors: H
authors: Park
authors: Center for Spintronics Research, Korea Institute of Science and Technology, Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 136-791, Korea.
authors: Chaun
authors: C
authors: Jang
authors: Center for Spintronics Research, Korea Institute of Science and Technology, Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 136-791, Korea.
authors: Byoung-Chul
authors: BC
authors: Min
authors: Korea Basic Science Institute, 169-148 Gwahak-ro, Yuseong-gu, Daejeon 305-806, Korea.
authors: Sang-Il
authors: SI
authors: Kim
authors: Korea Basic Science Institute, 169-148 Gwahak-ro, Yuseong-gu, Daejeon 305-806, Korea.
authors: Seung-Young
authors: SY
authors: Park
authors: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Korea.
authors: Chul Soon
authors: CS
authors: Park