title: Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors.
abstract: Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as 20 nW K(-1) with a measurements sensitivity below 20 nW K(-1). The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W (m K)(-1) to 2.3 W (m K)(-1).
authors.affiliation: IBM Research-Zurich, Säumerstr. 4, 8803 Rüschlikon, Switzerland.
authors.forename: S F
authors.initials: SF
authors.lastname: Karg
authors.forename: V
authors.initials: V
authors.lastname: Troncale
authors.forename: U
authors.initials: U
authors.lastname: Drechsler
authors.forename: P
authors.initials: P
authors.lastname: Mensch
authors.forename: P
authors.initials: P
authors.lastname: Das Kanungo
authors.forename: H
authors.initials: H
authors.lastname: Schmid
authors.forename: V
authors.initials: V
authors.lastname: Schmidt
authors.forename: L
authors.initials: L
authors.lastname: Gignac
authors.forename: H
authors.initials: H
authors.lastname: Riel
authors.forename: B
authors.initials: B
authors.lastname: Gotsmann