title: Wide bandgap III-nitride nanomembranes for optoelectronic applications.
abstract: Single crystalline nanomembranes (NMs) represent a new embodiment of semiconductors having a two-dimensional flexural character with comparable crystalline perfection and optoelectronic efficacy. In this Letter, we demonstrate the preparation of GaN NMs with a freestanding thickness between 90 to 300 nm. Large-area (>5 × 5 mm(2)) GaN NMs can be routinely obtained using a procedure of conductivity-selective electrochemical etching. GaN NM is atomically flat and possesses an optical quality similar to that from bulk GaN. A light-emitting optical heterostructure NM consisting of p-GaN/InGaN quantum wells/GaN is prepared by epitaxy, undercutting etching, and layer transfer. Bright blue light emission from this heterostructure validates the concept of NM-based optoelectronics and points to potentials in flexible applications and heterogeneous integration.
authors.affiliation: Department of Electrical Engineering, Yale University , New Haven, Connecticut 06520, United States.
authors.forename: Sung Hyun
authors.initials: SH
authors.lastname: Park
authors.forename: Ge
authors.initials: G
authors.lastname: Yuan
authors.forename: Danti
authors.initials: D
authors.lastname: Chen
authors.forename: Kanglin
authors.initials: K
authors.lastname: Xiong
authors.forename: Jie
authors.initials: J
authors.lastname: Song
authors.forename: Benjamin
authors.initials: B
authors.lastname: Leung
authors.forename: Jung
authors.initials: J
authors.lastname: Han