title: One order of magnitude faster phase change at reduced power in Ti-Sb-Te.
abstract: To date, slow Set operation speed and high Reset operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti0.4Sb2Te3 alloy, showing one order of magnitude faster Set operation speed and as low as one-fifth Reset operation power, compared with Ge2Sb2Te5-based phase change memory cell at the same size. The enhancements may be rooted in the common presence of titanium-centred octahedral motifs in both amorphous and crystalline Ti0.4Sb2Te3 phases. The essentially unchanged local structures around the titanium atoms may be responsible for the significantly improved performance, as these structures could act as nucleation centres to facilitate a swift, low-energy order-disorder transition for the rest of the Sb-centred octahedrons. Our study may provide an alternative to the development of high-speed, low-power dynamic random access memory-like phase change memory technology.
authors.affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China [2].
authors.forename: Min
authors.initials: M
authors.lastname: Zhu
authors.affiliation: 1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China [2].
authors.forename: Mengjiao
authors.initials: M
authors.lastname: Xia
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Rao
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
authors.forename: Xianbin
authors.initials: X
authors.lastname: Li
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
authors.forename: Liangcai
authors.initials: L
authors.lastname: Wu
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
authors.forename: Xinglong
authors.initials: X
authors.lastname: Ji
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
authors.forename: Shilong
authors.initials: S
authors.lastname: Lv
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
authors.forename: Zhitang
authors.initials: Z
authors.lastname: Song
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
authors.forename: Songlin
authors.initials: S
authors.lastname: Feng
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
authors.forename: Hongbo
authors.initials: H
authors.lastname: Sun
authors.affiliation: 1] State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China [2] Department of Physics, Applied Physics, & Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
authors.forename: Shengbai
authors.initials: S
authors.lastname: Zhang