title: A highly conducting graphene film with dual-side molecular n-doping.
abstract: Doping is an efficient way to engineer the conductivity and the work function of graphene, which is, however, limited to wet-chemical doping or metal deposition particularly for n-doping, Here, we report a simple method of modulating the electrical conductivity of graphene by dual-side molecular n-doping with diethylenetriamine (DETA) on the top and amine-functionalized self-assembled monolayers (SAMs) at the bottom. The resulting charge carrier density of graphene is as high as -1.7 × 10(13) cm(-2), and the sheet resistance is as low as ∼86 ± 39 Ω sq(-1), which is believed to be the lowest sheet resistance of monolayer graphene reported so far. This facile dual-side n-doping strategy would be very useful to optimize the performance of various graphene-based electronic devices.
authors.affiliation: Department of Chemistry, Seoul National University, 1 Gwanak-ro, Seoul 151-742, Korea. byunghee@snu.ac.kr.
authors.forename: Youngsoo
authors.initials: Y
authors.lastname: Kim
authors.forename: Jaesung
authors.initials: J
authors.lastname: Park
authors.forename: Junmo
authors.initials: J
authors.lastname: Kang
authors.forename: Je Min
authors.initials: JM
authors.lastname: Yoo
authors.forename: Kyoungjun
authors.initials: K
authors.lastname: Choi
authors.forename: Eun Sun
authors.initials: ES
authors.lastname: Kim
authors.forename: Jae-Boong
authors.initials: JB
authors.lastname: Choi
authors.forename: Chanyong
authors.initials: C
authors.lastname: Hwang
authors.forename: K S
authors.initials: KS
authors.lastname: Novoselov
authors.forename: Byung Hee
authors.initials: BH
authors.lastname: Hong