title: Influence of gas ambient on charge writing at the LaAlO₃/SrTiO₃ heterointerface.
abstract: We investigated the influences of charge writing on the surface work function (W) and sheet resistance (R) of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments: H2(2%)/N2(98%), air, N2, and O2. The decrease in W and R due to charge writing was much larger in air (ΔW = -0.45 eV and ΔR = -40 kΩ/S) than in O2 (ΔW = -0.21 eV and ΔR = -19 kΩ/S). The reduced R could be maintained more than 100 h in H2/N2. Such distinct behaviors were quantitatively discussed, based on the proposed charge-writing mechanisms. Such analyses showed how several processes, such as carrier transfer via surface adsorbates, surface redox, electronic state modification, and electrochemical surface reactions, contributed to charge writing in each gas.
authors.affiliation: Department of Physics, Ewha Womans University , Seoul 120-750, Republic of Korea.
authors.forename: Haeri
authors.initials: H
authors.lastname: Kim
authors.forename: Seon Young
authors.initials: SY
authors.lastname: Moon
authors.forename: Shin-Ik
authors.initials: SI
authors.lastname: Kim
authors.forename: Seung-Hyub
authors.initials: SH
authors.lastname: Baek
authors.forename: Ho Won
authors.initials: HW
authors.lastname: Jang
authors.forename: Dong-Wook
authors.initials: DW
authors.lastname: Kim