title: Active control of magnetoresistance of organic spin valves using ferroelectricity.
abstract: Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, which is correlated with the polarization of the ferroelectric layer; the magnetoresistance even changes sign when the electric polarization of the ferroelectric layer is reversed. These findings enable active control of resistance using both electric and magnetic fields, opening up possibility for multi-state organic spin valves.
authors.affiliation: 1] State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China [2] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [3] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA [4] [5].
authors.forename: Dali
authors.initials: D
authors.lastname: Sun
authors.affiliation: 1] State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China [2].
authors.forename: Mei
authors.initials: M
authors.lastname: Fang
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: Xiaoshan
authors.initials: X
authors.lastname: Xu
authors.affiliation: 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA.
authors.forename: Lu
authors.initials: L
authors.lastname: Jiang
authors.affiliation: 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA.
authors.forename: Hangwen
authors.initials: H
authors.lastname: Guo
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China.
authors.forename: Yanmei
authors.initials: Y
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China.
authors.forename: Wenting
authors.initials: W
authors.lastname: Yang
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China.
authors.forename: Lifeng
authors.initials: L
authors.lastname: Yin
authors.affiliation: 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA.
authors.forename: Paul C
authors.initials: PC
authors.lastname: Snijders
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: T Z
authors.initials: TZ
authors.lastname: Ward
authors.affiliation: 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Gai
authors.affiliation: 1] Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: X-G
authors.initials: XG
authors.lastname: Zhang
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
authors.forename: Ho Nyung
authors.initials: HN
authors.lastname: Lee
authors.affiliation: 1] State Key Laboratory of Surface Physics and Department of Physics and Collaborative Innovation Center of Advanced Microstructure, Fudan University, Shanghai 200433, China [2] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA.
authors.forename: Jian
authors.initials: J
authors.lastname: Shen