title: Laser-induced solid-phase doped graphene.
abstract: There have been numerous efforts to improve the performance of graphene-based electronic devices by chemical doping. Most studies have focused on gas-phase doping with chemical vapor deposition. However, that requires a complicated transfer process that causes undesired doping and defects by residual polymers. Here, we report a solid-phase synthesis of doped graphene by means of silicon carbide (SiC) substrate including a dopant source driven by pulsed laser irradiation. This method provides in situ direct growth of doped graphene on an insulating SiC substrate without a transfer step. A numerical simulation on the temperature history of the SiC surface during laser irradiation reveals that the surface temperature of SiC can be accurately controlled to grow nitrogen-doped graphene from the thermal decomposition of nitrogen-doped SiC. Laser-induced solid-phase doped graphene is highly promising for the realization of graphene-based nanoelectronics with desired functionalities.
authors.affiliation: Department of Materials Science and Engineering and ‡Department of Electrical Engineering and Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 305-701, Republic of Korea.
authors.forename: Insung
authors.initials: I
authors.lastname: Choi
authors.forename: Hu Young
authors.initials: HY
authors.lastname: Jeong
authors.forename: Dae Yool
authors.initials: DY
authors.lastname: Jung
authors.forename: Myunghwan
authors.initials: M
authors.lastname: Byun
authors.forename: Choon-Gi
authors.initials: CG
authors.lastname: Choi
authors.forename: Byung Hee
authors.initials: BH
authors.lastname: Hong
authors.forename: Sung-Yool
authors.initials: SY
authors.lastname: Choi
authors.forename: Keon Jae
authors.initials: KJ
authors.lastname: Lee