title: Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.
abstract: The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).
authors.affiliation: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: Dohun
authors.initials: D
authors.lastname: Kim
authors.affiliation: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: Zhan
authors.initials: Z
authors.lastname: Shi
authors.affiliation: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: C B
authors.initials: CB
authors.lastname: Simmons
authors.affiliation: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: D R
authors.initials: DR
authors.lastname: Ward
authors.affiliation: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: J R
authors.initials: JR
authors.lastname: Prance
authors.affiliation: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: Teck Seng
authors.initials: TS
authors.lastname: Koh
authors.affiliation: Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.
authors.forename: John King
authors.initials: JK
authors.lastname: Gamble
authors.affiliation: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: D E
authors.initials: DE
authors.lastname: Savage
authors.affiliation: Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: M G
authors.initials: MG
authors.lastname: Lagally
authors.affiliation: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: Mark
authors.initials: M
authors.lastname: Friesen
authors.affiliation: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: S N
authors.initials: SN
authors.lastname: Coppersmith
authors.affiliation: Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
authors.forename: Mark A
authors.initials: MA
authors.lastname: Eriksson