title: Nanoporous silicon oxide memory.
abstract: Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiOx) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiOx memory exhibited an extremely low electroforming voltage (∼ 1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10(7) A), a long high-temperature lifetime (≥ 10(4) s at 100 °C), excellent cycling endurance (≥ 10(5)), sub-50 ns switching speeds, and low power consumption (∼ 6 × 10(-5) W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiOx RRAM provide a route toward easily accessed nonvolatile memory applications.
authors.affiliation: Department of Chemistry, ‡Smalley Institute for Nanoscale Science and Technology, §Department of Materials Science and NanoEngineering, and ∥Department of Computer Science, Rice University , 6100 Main Street, Houston, Texas 77005, United States.
authors.forename: Gunuk
authors.initials: G
authors.lastname: Wang
authors.forename: Yang
authors.initials: Y
authors.lastname: Yang
authors.forename: Jae-Hwang
authors.initials: JH
authors.lastname: Lee
authors.forename: Vera
authors.initials: V
authors.lastname: Abramova
authors.forename: Huilong
authors.initials: H
authors.lastname: Fei
authors.forename: Gedeng
authors.initials: G
authors.lastname: Ruan
authors.forename: Edwin L
authors.initials: EL
authors.lastname: Thomas
authors.forename: James M
authors.initials: JM
authors.lastname: Tour