title: Lattice strain effects on the optical properties of MoS2 nanosheets.
abstract: "Strain engineering" in functional materials has been widely explored to tailor the physical properties of electronic materials and improve their electrical and/or optical properties. Here, we exploit both in plane and out of plane uniaxial tensile strains in MoS2 to modulate its band gap and engineer its optical properties. We utilize X-ray diffraction and cross-sectional transmission electron microscopy to quantify the strains in the as-synthesized MoS2 nanosheets and apply measured shifts of Raman-active modes to confirm lattice strain modification of both the out-of-plane and in-plane phonon vibrations of the MoS2 nanosheets. The induced band gap evolution due to in-plane and out-of-plane tensile stresses is validated by photoluminescence (PL) measurements, promising a potential route for unprecedented manipulation of the physical, electrical and optical properties of MoS2.
authors.affiliation: Department of Materials Science & Engineering, CAS key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Yang
authors.affiliation: Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, CAEP, Sichuan, 621900, China.
authors.forename: Xudong
authors.initials: X
authors.lastname: Cui
authors.affiliation: Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720, USA.
authors.forename: Jingyu
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, CAEP, Sichuan, 621900, China.
authors.forename: Kan
authors.initials: K
authors.lastname: Wang
authors.affiliation: Department of Materials Science & Engineering, CAS key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China.
authors.forename: Meng
authors.initials: M
authors.lastname: Shen
authors.affiliation: Department of Materials Science & Engineering, CAS key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China.
authors.forename: Shuangshuang
authors.initials: S
authors.lastname: Zeng
authors.affiliation: Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, 92093, USA.
authors.forename: Shadi A
authors.initials: SA
authors.lastname: Dayeh
authors.affiliation: Department of Electrical Engineering, The State University of New York at Buffalo, Buffalo, NY, 14228, USA.
authors.forename: Liang
authors.initials: L
authors.lastname: Feng
authors.affiliation: Department of Materials Science & Engineering, CAS key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China.
authors.forename: Bin
authors.initials: B
authors.lastname: Xiang