title: Sputtering deposition of P-type SnO films with SnO₂ target in hydrogen-containing atmosphere.
abstract: In this work, we had investigated sputtering deposition of p-type SnO using the widely used and robust SnO2 target in a hydrogen-containing reducing atmosphere. The effects of the hydrogen-containing sputtering gas on structures, compositions, optical, and electrical properties of deposited SnOx films were studied. Results show that polycrystalline and SnO-dominant films could be readily obtained by carefully controlling the hydrogen gas ratio in the sputtering gas and the extent of reduction reaction. P-type conductivity was unambiguously observed for SnO-dominant films with traceable Sn components, exhibiting a p-type Hall mobility of up to ∼3 cm(2) V(-1) s(-1). P-type SnO thin-film transistors using such SnO-dominant films were also demonstrated.
authors.affiliation: Graduate Institute of Electronics Engineering, Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Innovative Photonics Advanced Research Center (i-PARC), National Taiwan University , Taipei, 10617, Taiwan.
authors.forename: Po-Ching
authors.initials: PC
authors.lastname: Hsu
authors.forename: Chao-Jui
authors.initials: CJ
authors.lastname: Hsu
authors.forename: Ching-Hsiang
authors.initials: CH
authors.lastname: Chang
authors.forename: Shiao-Po
authors.initials: SP
authors.lastname: Tsai
authors.forename: Wei-Chung
authors.initials: WC
authors.lastname: Chen
authors.forename: Hsing-Hung
authors.initials: HH
authors.lastname: Hsieh
authors.forename: Chung-Chih
authors.initials: CC
authors.lastname: Wu