title: A universal method for preparation of noble metal nanoparticle-decorated transition metal dichalcogenide nanobelts.
abstract: MoS2, TaS2, TiS2, WSe2 and TaSe2 nanobelts decorated with a PtAg alloy or Pt NPs have been successfully synthesized by etching 2D nanosheets under a mild reaction condition followed by a subsequent nanosheet-to-nanobelt transformation mediated by the PVP template. The PtAg-MoS2 hybrid nanobelt coated with PVP is used as the active material in a memory device, which exhibits hysteresis behavior with the function of dynamic random access memory.
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Xun
authors.initials: X
authors.lastname: Hong
authors.forename: Juqing
authors.initials: J
authors.lastname: Liu
authors.forename: Bing
authors.initials: B
authors.lastname: Zheng
authors.forename: Xiao
authors.initials: X
authors.lastname: Huang
authors.forename: Xiao
authors.initials: X
authors.lastname: Zhang
authors.forename: Chaoliang
authors.initials: C
authors.lastname: Tan
authors.forename: Junze
authors.initials: J
authors.lastname: Chen
authors.forename: Zhanxi
authors.initials: Z
authors.lastname: Fan
authors.forename: Hua
authors.initials: H
authors.lastname: Zhang
keywords: MoS2; memory devices; nanobelts; nanosheets; noble metal nanoparticles; transition metal dichalcogenides