title: Mirror-symmetric magneto-optical Kerr rotation using visible light in [(GeTe)2(Sb2Te3)1]n topological superlattices.
abstract: Interfacial phase change memory (iPCM), that has a structure of a superlattice made of alternating atomically thin GeTe and Sb2Te3 layers, has recently attracted attention not only due to its superior performance compared to the alloy of the same average composition in terms of energy consumption but also due to its strong response to an external magnetic field (giant magnetoresistance) that has been speculated to arise from switching between topological insulator (RESET) and normal insulator (SET) phases. Here we report magneto-optical Kerr rotation loops in the visible range, that have mirror symmetric resonances with respect to the magnetic field polarity at temperatures above 380 K when the material is in the SET phase that has Kramers-pairs in spin-split bands. We further found that this threshold temperature may be controlled if the sample was cooled in a magnetic field. The observed results open new possibilities for use of iPCM beyond phase-change memory applications.
authors.affiliation: Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya, Japan.
authors.forename: Do
authors.initials: D
authors.lastname: Bang
authors.affiliation: Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya, Japan.
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Awano
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba, Japan.
authors.forename: Junji
authors.initials: J
authors.lastname: Tominaga
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba, Japan.
authors.forename: Alexander V
authors.initials: AV
authors.lastname: Kolobov
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba, Japan.
authors.forename: Paul
authors.initials: P
authors.lastname: Fons
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba, Japan.
authors.forename: Yuta
authors.initials: Y
authors.lastname: Saito
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba, Japan.
authors.forename: Kotaro
authors.initials: K
authors.lastname: Makino
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science & Technology (AIST), Tsukuba, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Nakano
authors.affiliation: Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Japan.
authors.forename: Muneaki
authors.initials: M
authors.lastname: Hase
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.
authors.forename: Yukihiko
authors.initials: Y
authors.lastname: Takagaki
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.
authors.forename: Alessandro
authors.initials: A
authors.lastname: Giussani
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.
authors.forename: Raffaella
authors.initials: R
authors.lastname: Calarco
authors.affiliation: Department of Physics, TIES, Tokyo Institute of Technology, Tokyo, Japan.
authors.forename: Shuichi
authors.initials: S
authors.lastname: Murakami