title: Graphene field-effect transistor and its application for electronic sensing.
abstract: Graphene, because of its excellent mechanical, electrical, chemical, physical properties, sparked great interest to develop and extend its applications. Particularly, graphene based field-effect transistors (GFETs) present exciting and bright prospects for sensing applications due to their greatly higher sensitivity and stronger selectivity. This Review highlights a selection of important topics pertinent to GFETs and their application in electronic sensors. This article begins with a description of the fabrications and characterizations of GFETs, and then introduces the new developments in physical, chemical, and biological electronic detection using GFETs. Finally, several perspective and current challenges of GFETs development are presented, and some proposals are suggested for further development and exploration.
authors.affiliation: Key Laboratory for Organic Electronics & Information Displays (KLOEID), Nanjing University of Posts and Telecommunications, Nanjing, 210046, China.
authors.forename: Beibei
authors.initials: B
authors.lastname: Zhan
authors.forename: Chen
authors.initials: C
authors.lastname: Li
authors.forename: Jun
authors.initials: J
authors.lastname: Yang
authors.forename: Gareth
authors.initials: G
authors.lastname: Jenkins
authors.forename: Wei
authors.initials: W
authors.lastname: Huang
authors.forename: Xiaochen
authors.initials: X
authors.lastname: Dong
mesh_terms: D004581:Electronics; D006108:Graphite / Q000737:chemistry*; D008855:Microscopy, Electron, Scanning
chemical_list: D006108:Graphite
keywords: field-effect transistors; graphene; sensing