title: Multifunctional Schottky-diode circuit comprising palladium/molybdenum disulfide nanosheet.
abstract: Many electron devices using two-dimensional dichalcogenide MoS2 have been reported beyond graphene, but those were mostly field-effect transistors except few while P-N or Schottky diode form devices should be also important. In the present study, we have fabricated a Pd-driven MoS2 Schottky diode and its related circuits for multifunctional applications: dynamic electrical rectifier, visible light sensor, and hydrogen gas sensor.
authors.affiliation: Department of Physics and Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Korea.
authors.forename: Jin Sung
authors.initials: JS
authors.lastname: Kim
authors.forename: Hee Sung
authors.initials: HS
authors.lastname: Lee
authors.forename: Pyo Jin
authors.initials: PJ
authors.lastname: Jeon
authors.forename: Young Tack
authors.initials: YT
authors.lastname: Lee
authors.forename: Woojin
authors.initials: W
authors.lastname: Yoon
authors.forename: Sang-Yong
authors.initials: SY
authors.lastname: Ju
authors.forename: Seongil
authors.initials: S
authors.lastname: Im
keywords: Schottky barrier; diode circuits; nanosheets