title: Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone.
abstract: We present an Al2O3 dielectric layer on molybdenum disulfide (MoS2), deposited using atomic layer deposition (ALD) with ozone/trimethylaluminum (TMA) and water/TMA as precursors. The results of atomic force microscopy and low-energy ion scattering spectroscopy show that using TMA and ozone as precursors leads to the formation of uniform Al2O3 layers, in contrast to the incomplete coverage we observe when using TMA/H2O as precursors. Our Raman and X-ray photoelectron spectroscopy measurements indicate minimal variations in the MoS2 structure after ozone treatment at 200 °C, suggesting its excellent chemical resistance to ozone.
authors.affiliation: Department of Materials Science and Engineering, The University of Texas at Dallas , 800 West Campbell Road, Richardson, Texas 75080, United States.
authors.forename: Lanxia
authors.initials: L
authors.lastname: Cheng
authors.forename: Xiaoye
authors.initials: X
authors.lastname: Qin
authors.forename: Antonio T
authors.initials: AT
authors.lastname: Lucero
authors.forename: Angelica
authors.initials: A
authors.lastname: Azcatl
authors.forename: Jie
authors.initials: J
authors.lastname: Huang
authors.forename: Robert M
authors.initials: RM
authors.lastname: Wallace
authors.forename: Kyeongjae
authors.initials: K
authors.lastname: Cho
authors.forename: Jiyoung
authors.initials: J
authors.lastname: Kim