title: Broadband antireflection and field emission properties of TiN-coated Si-nanopillars.
abstract: Broadband antireflection and field emission characteristics of silicon nanopillars (Si-NPs) fabricated by self-masking dry etching in hydrogen-containing plasma were systematically investigated. In particular, the effects of ultrathin (5-20 nm) titanium nitride (TiN) films deposited on Si-NPs by atomic layer deposition (ALD) on the optoelectronic properties were explored. The results showed that by coating the Si-NPs with a thin layer of TiN the antireflection capability of pristine Si-NPs can be significantly improved, especially in the wavelength range of 1000-1500 nm. The enhanced field emission characteristics of these TiN/Si-NP heterostructures suggest that, in addition to the reflectance suppression in the long wavelength range arising from the strong wavelength-dependent refractive index of TiN, the TiN-coating may have also significantly modified the effective work function at the TiN/Si interface as well.
authors.affiliation: Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan. ymchang7@gmail.com jyjuang@g2.nctu.edu.tw.
authors.forename: Yuan-Ming
authors.initials: YM
authors.lastname: Chang
authors.forename: Srikanth
authors.initials: S
authors.lastname: Ravipati
authors.forename: Pin-Hsu
authors.initials: PH
authors.lastname: Kao
authors.forename: Jiann
authors.initials: J
authors.lastname: Shieh
authors.forename: Fu-Hsiang
authors.initials: FH
authors.lastname: Ko
authors.forename: Jenh-Yih
authors.initials: JY
authors.lastname: Juang