title: Surface energy-mediated construction of anisotropic semiconductor wires with selective crystallographic polarity.
abstract: ZnO is a wide band-gap semiconductor with piezoelectric properties suitable for opto-electronics, sensors, and as an electrode material. Controlling the shape and crystallography of any semiconducting nanomaterial is a key step towards extending their use in applications. Whilst anisotropic ZnO wires have been routinely fabricated, precise control over the specific surface facets and tailoring of polar and non-polar growth directions still requires significant refinement. Manipulating the surface energy of crystal facets is a generic approach for the rational design and growth of one-dimensional (1D) building blocks. Although the surface energy is one basic factor for governing crystal nucleation and growth of anisotropic 1D structures, structural control based on surface energy minimization has not been yet demonstrated. Here, we report an electronic configuration scheme to rationally modulate surface electrostatic energies for crystallographic-selective growth of ZnO wires. The facets and orientations of ZnO wires are transformed between hexagonal and rectangular/diamond cross-sections with polar and non-polar growth directions, exhibiting different optical and piezoelectrical properties. Our novel synthetic route for ZnO wire fabrication provides new opportunities for future opto-electronics, piezoelectronics, and electronics, with new topological properties.
authors.affiliation: 1] Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK [2].
authors.forename: Jung Inn
authors.initials: JI
authors.lastname: Sohn
authors.affiliation: 1] Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, South Korea [2].
authors.forename: Woong-Ki
authors.initials: WK
authors.lastname: Hong
authors.affiliation: 1] Frontier Research Lab., Samsung Advanced Institute of Technology, Yongin, South Korea [2].
authors.forename: Sunghoon
authors.initials: S
authors.lastname: Lee
authors.affiliation: Department of Physics, Hanyang University, Seoul, South Korea.
authors.forename: Sanghyo
authors.initials: S
authors.lastname: Lee
authors.affiliation: Frontier Research Lab., Samsung Advanced Institute of Technology, Yongin, South Korea.
authors.forename: JiYeon
authors.initials: J
authors.lastname: Ku
authors.affiliation: Frontier Research Lab., Samsung Advanced Institute of Technology, Yongin, South Korea.
authors.forename: Young Jun
authors.initials: YJ
authors.lastname: Park
authors.affiliation: Department of Physics, Hanyang University, Seoul, South Korea.
authors.forename: Jinpyo
authors.initials: J
authors.lastname: Hong
authors.affiliation: Frontier Research Lab., Samsung Advanced Institute of Technology, Yongin, South Korea.
authors.forename: Sungwoo
authors.initials: S
authors.lastname: Hwang
authors.affiliation: Korea Advanced Nano Fab Centre, Suwon, South Korea.
authors.forename: Kyung Ho
authors.initials: KH
authors.lastname: Park
authors.affiliation: Department of Materials, University of Oxford, Oxford OX1 3PH, UK.
authors.forename: Jamie H
authors.initials: JH
authors.lastname: Warner
authors.affiliation: Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK.
authors.forename: SeungNam
authors.initials: S
authors.lastname: Cha
authors.affiliation: Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK.
authors.forename: Jong Min
authors.initials: JM
authors.lastname: Kim