title: Atomic layer deposition of a MoS₂ film.
abstract: A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl₅ and H₂S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range.
authors: Department of Chemistry and Graphene Research Centre, National University of Singapore, 3 Science Drive 3, Singapore 117543. chmlohkp@nus.edu.sg.
authors: Lee Kheng
authors: LK
authors: Tan
authors: Bo
authors: B
authors: Liu
authors: Jing Hua
authors: JH
authors: Teng
authors: Shifeng
authors: S
authors: Guo
authors: Hong Yee
authors: HY
authors: Low
authors: Hui Ru
authors: HR
authors: Tan
authors: Christy Yuen Tung
authors: CY
authors: Chong
authors: Ren Bin
authors: RB
authors: Yang
authors: Kian Ping
authors: KP
authors: Loh