title: Interface engineering for high-performance top-gated MoS2 field-effect transistors.
abstract: Experimental evidence of the optimized interface engineering effects in MoS2 transistors is demonstrated. The MoS2/Y2O3/HfO2 stack offers excellent interface control. Results show that HfO2 layer can be scaled down to 9 nm, yet achieving a near-ideal sub-threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS2 transistor reported to date.
authors: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors: Xuming
authors: X
authors: Zou
authors: Jingli
authors: J
authors: Wang
authors: Chung-Hua
authors: CH
authors: Chiu
authors: Yun
authors: Y
authors: Wu
authors: Xiangheng
authors: X
authors: Xiao
authors: Changzhong
authors: C
authors: Jiang
authors: Wen-Wei
authors: WW
authors: Wu
authors: Liqiang
authors: L
authors: Mai
authors: Tangsheng
authors: T
authors: Chen
authors: Jinchai
authors: J
authors: Li
authors: Johnny C
authors: JC
authors: Ho
authors: Lei
authors: L
authors: Liao
keywords: MoS2; interface engineering; top-gated; transistors; two-dimensional materials