title: Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density.
abstract: A novel device structure is developed, which uses easy-to-grow nano scaffold films to localize oxygen vacancies at vertical heterointerfaces. The strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high-concentration oxygen vacancy. Non-linear electroresistance at room temperature is demonstrated using these nano scaffold devices. The resistance variations exceed two orders of magnitude with very high uniformity and tunability.
authors: Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.
authors: Shinbuhm
authors: S
authors: Lee
authors: Abhijeet
authors: A
authors: Sangle
authors: Ping
authors: P
authors: Lu
authors: Aiping
authors: A
authors: Chen
authors: Wenrui
authors: W
authors: Zhang
authors: Jae Sung
authors: JS
authors: Lee
authors: Haiyan
authors: H
authors: Wang
authors: Quanxi
authors: Q
authors: Jia
authors: Judith L
authors: JL
authors: MacManus-Driscoll
keywords: memristor; nanoscaffold film