title: Origin of yellow-band emission in epitaxially grown GaN nanowire arrays.
abstract: Here, we report the origin of the yellow-band emission in epitaxial GaN nanowire arrays grown under carbon-free conditions. GaN nanowires directly grown on [0001]-oriented sapphire substrate exhibit an obvious and broad yellow-band in the visible range 400-800 nm, whereas the insertion of Al/Au layers in GaN-sapphire interface significantly depresses the visible emission, and only a sharp peak in the UV range (369 nm) can be observed. The persuasive differences in cathodoluminescence provide direct evidence for demonstrating that the origin of the yellow-band emission in GaN nanowire arrays arises from dislocation threading. The idea using buffering/barrier layers to isolate the dislocation threading in epitaxially grown GaN nanowires can be extended to the rational synthesis and structural defect controlling of a wide range of semiconductor films and nanostructures with superior crystal quality and excellent luminescence property.
authors: Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road, Shenyang 110016, China.
authors: Baodan
authors: B
authors: Liu
authors: Fang
authors: F
authors: Yuan
authors: Benjamin
authors: B
authors: Dierre
authors: Takashi
authors: T
authors: Sekiguchi
authors: Song
authors: S
authors: Zhang
authors: Yongkuan
authors: Y
authors: Xu
authors: Xin
authors: X
authors: Jiang