title: Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells.
abstract: Electrochemical metallisation (ECM) memory cells potentially suffer from limited memory retention time, which slows down the future commercialisation of this type of data memory. In this work, we investigate Ag/GeSx/Pt redox-based resistive memory cells (ReRAM) with and without an additional Ta barrier layer by time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray absorption spectroscopy (XAS) and synchrotron high-energy X-ray diffractometry (XRD) to investigate the physical mechanism behind the shift and/or loss of OFF data retention. Electrical measurements demonstrate the effectiveness and high potential of the diffusion barrier layer in practical applications.
authors: Institut für Werkstoffe der Elektrotechnik II (IWE II) & JARA-FIT, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany.
authors: Jan
authors: J
authors: van den Hurk
authors: Ann-Christin
authors: AC
authors: Dippel
authors: Deok-Yong
authors: DY
authors: Cho
authors: Joshua
authors: J
authors: Straquadine
authors: Uwe
authors: U
authors: Breuer
authors: Peter
authors: P
authors: Walter
authors: Rainer
authors: R
authors: Waser
authors: Ilia
authors: I
authors: Valov