title: Electrodeposited ZnO-nanowire/Cu₂O photovoltaic device with highly resistive ZnO intermediate layer.
abstract: Cl-doped ZnO-nanowire (Cl:ZnO-nws)/Cu2O photovoltaic devices were prepared by electrodeposition in aqueous solutions, and the effects of the insertion of the highly resistive ZnO (i-ZnO) layer has been demonstrated by an improvement of the photovoltaic performance. The Cl:ZnO-nws and i-ZnO layer were prepared by electrodeposition in a zinc chloride aqueous solution with saturated molecular oxygen and simple zinc nitrate aqueous solution, respectively. The i-ZnO layer was directly deposited on the Cl:ZnO-nws and suppressed the electrodeposition of the Cu2O layer on the Cl:ZnO-nws. The insertion of the i-ZnO layer between the Cl:ZnO-nws and Cu2O layers induced an improvement in the photovoltaic performance from 0.40 to 1.26% with a 0.35 V open circuit voltage, 7.1 mA·cm(-2) short circuit current density, and 0.52 fill factor due to the reduction of the recombination loss.
authors: Graduate School of Engineering, Toyohashi University of Technology , Toyohashi, Aichi 441-8580, Japan.
authors: Masanobu
authors: M
authors: Izaki
authors: Takayuki
authors: T
authors: Ohta
authors: Misaki
authors: M
authors: Kondo
authors: Toshiaki
authors: T
authors: Takahashi
authors: Fariza Binti
authors: FB
authors: Mohamad
authors: Mohd
authors: M
authors: Zamzuri
authors: Junji
authors: J
authors: Sasano
authors: Tsutomu
authors: T
authors: Shinagawa
authors: Thierry
authors: T
authors: Pauporté