title: Direct observation of doping sites in temperature-controlled, p-doped P3HT thin films by conducting atomic force microscopy.
abstract: The distribution of dopant sites in doped poly(3-hexylthiophene) (P3HT) thin films is characterized using optical absorption, grazing-incidence X-ray diffraction, and conducting atomic force microscopy (c-AFM). It is shown that dopant sites can be directly observed using c-AFM and that the solution temperature dramatically impacts phase separation and conductivity in spin-cast films.
authors: Department of Materials Science and Engineering, Stanford University, Stanford, California, 94305, USA.
authors: Duc T
authors: DT
authors: Duong
authors: Hung
authors: H
authors: Phan
authors: David
authors: D
authors: Hanifi
authors: Pil Sung
authors: PS
authors: Jo
authors: Thuc-Quyen
authors: TQ
authors: Nguyen
authors: Alberto
authors: A
authors: Salleo
keywords: conjugated polymers; doping; organic electronics; organic semiconductors; thin films