title: Ferroelectric tunnel junctions for information storage and processing.
abstract: Computer memory that is non-volatile and therefore able to retain its information even when switched off enables computers that do not need to be booted up. One of the technologies for such applications is ferroelectric random access memories, where information is stored as ferroelectric polarization. To miniaturize such devices to the size of a few nanometres, ferroelectric tunnel junctions have seen considerable interest. There, the electric polarization determines the electrical resistance of these thin films, switching the current on and off. With control over other parameters such as magnetism also being possible, ferroelectric tunnel junctions represent a promising and flexible device design.
authors: Unité Mixte de Physique CNRS/Thales, 1 avenue Fresnel, 91767 Palaiseau, & Université Paris-Sud, 91405 Orsay, France.
authors: Vincent
authors: V
authors: Garcia
authors: Unité Mixte de Physique CNRS/Thales, 1 avenue Fresnel, 91767 Palaiseau, & Université Paris-Sud, 91405 Orsay, France.
authors: Manuel
authors: M
authors: Bibes