title: Contact properties to CVD-graphene on GaAs substrates for optoelectronic applications.
abstract: The optimization of contacts between graphene and metals is important for many optoelectronic applications. In this work, we evaluate the contact resistance and sheet resistance of monolayer and few-layered graphene with different metallizations using the transfer length method (TLM). Graphene was obtained by the chemical vapor deposition technique (CVD-graphene) and transferred onto GaAs and Si/SiO₂ substrates. To account for the quality of large-area contacts used in a number of practical applications, a millimeter-wide TLM pattern was used for transport measurements. Different metals--namely, Ag, Pt, Cr, Au, Ni, and Ti--have been tested. The minimal contact resistance Rc obtained in this work is 11.3 kΩ μm for monolayer CVD-graphene, and 6.3 kΩ μm for a few-layered graphene. Annealing allows us to decrease the contact resistance Rc and achieve 1.7 kΩm μm for few-layered graphene on GaAs substrate with Au contacts. The minimal sheet resistance Rsh of few-layered graphene transferred to GaAs and Si/SiO₂ substrates are 0.28 kΩ/□ and 0.27 kΩ/□. The Rsh value of monolayer graphene on the GaAs substrate is 8 times higher (2.3 kΩ/□), but it reduces for the monolayer graphene on Si/SiO₂ (1.4 kΩ/□). For distances between the contacts below 5 μm, a considerable reduction in the resistance per unit length was observed, which is explained by the changes in doping level caused by graphene suspension at small distances between contact pads.
authors: St. Petersburg Academic University, Nanotechnology Research and Education Centre RAS, Khlopin Str. 8/3, 194021, St. Petersburg, Russia. Forschungszentrum Jülich, Peter Grünberg Institut (PFI-8), 52425 Jülich, Germany. Institut d'Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud XI, 91405 Orsay cedex, France. Ioffe Physical Technical Institute of the Russian Academy of Science (RAS), Polytechnicheskaya Str. 26, 194021 St. Petersburg, Russia.
authors: A V
authors: AV
authors: Babichev
authors: V E
authors: VE
authors: Gasumyants
authors: A Yu
authors: AY
authors: Egorov
authors: S
authors: S
authors: Vitusevich
authors: M
authors: M
authors: Tchernycheva