title: Piezotronic interface engineering on ZnO/Au-based Schottky junction for enhanced photoresponse of a flexible self-powered UV detector.
abstract: Exploiting piezoelectric effect to engineer material interface has been confirmed as a promising way to optimize the performance of optoelectronic devices. Here, by using this effect, we have greatly improved the photoresponse of the fabricated ZnO/Au Schottky junction based self-powered UV detector. A 440% augment of photocurrent, together with 5× increased sensitivity, was obtained when the device was subjected to a 0.580% tensile strain. The enhancement can be attributed to the facility separation and extraction of photoexcites due to the formation of the stronger and expanding built-in field, which is a result of charge redistribution induced by piezoelectric polarization at the ZnO/Au interface. This study not only can strengthen the understanding of piezoelectric effects on energy devices but also can be extended to boost performances of optoelectronic devices made of piezoelectric semiconductor materials.
authors: State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing , Beijing 100083, People's Republic of China.
authors: Shengnan
authors: S
authors: Lu
authors: Junjie
authors: J
authors: Qi
authors: Shuo
authors: S
authors: Liu
authors: Zheng
authors: Z
authors: Zhang
authors: Zengze
authors: Z
authors: Wang
authors: Pei
authors: P
authors: Lin
authors: Qingliang
authors: Q
authors: Liao
authors: Qijie
authors: Q
authors: Liang
authors: Yue
authors: Y
authors: Zhang