title: Electronic states at the graphene-hexagonal boron nitride zigzag interface.
abstract: The electronic properties of graphene edges have been predicted to depend on their crystallographic orientation. The so-called zigzag (ZZ) edges haven been extensively explored theoretically and proposed for various electronic applications. However, their experimental study remains challenging due to the difficulty in realizing clean ZZ edges without disorder, reconstructions, or the presence of chemical functional groups. Here, we propose the ZZ-terminated, atomically sharp interfaces between graphene and hexagonal boron nitride (BN) as experimentally realizable, chemically stable model systems for graphene ZZ edges. Combining scanning tunneling microscopy and numerical methods, we explore the structure of graphene-BN interfaces and show them to host localized electronic states similar to those on the pristine graphene ZZ edge.
authors: Department of Applied Physics, Aalto University School of Science , P.O. Box 15100, 00076 Aalto, Finland.
authors: Robert
authors: R
authors: Drost
authors: Andreas
authors: A
authors: Uppstu
authors: Fabian
authors: F
authors: Schulz
authors: Sampsa K
authors: SK
authors: Hämäläinen
authors: Mikko
authors: M
authors: Ervasti
authors: Ari
authors: A
authors: Harju
authors: Peter
authors: P
authors: Liljeroth
keywords: Graphene; hexagonal boron nitride; interface; scanning tunneling microscopy (STM); zigzag