title: Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors.
abstract: We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 °C. For N2 HPA under 3 MPa at 200 °C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm(2)/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.
authors: School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea.
authors: Seokhyun
authors: S
authors: Yoon
authors: Young Jun
authors: YJ
authors: Tak
authors: Doo Hyun
authors: DH
authors: Yoon
authors: Uy Hyun
authors: UH
authors: Choi
authors: Jin-Seong
authors: JS
authors: Park
authors: Byung Du
authors: BD
authors: Ahn
authors: Hyun Jae
authors: HJ
authors: Kim