title: Investigation of thermal effects in through-silicon vias using scanning thermal microscopy.
abstract: Results of quantitative investigations of copper through-silicon vias (TSVs) are presented. The experiments were performed using scanning thermal microscopy (SThM), enabling highly localized imaging of thermal contrast between the copper TSVs and the surrounding material. Both dc and ac active-mode SThM was used and differences between these variants are shown. SThM investigations of TSVs may provide information on copper quality in TSV, as well as may lead to quantitative investigation of thermal boundaries in micro- and nanoelectronic structures. A proposal for heat flow analysis in a TSV, which includes the influence of the boundary region between the TSV and the silicon substrate, is presented; estimation of contact resistance and boundary thermal conductance is also given.
authors: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland. Electronic address: Grzegorz.Wielgoszewski@pwr.edu.pl.
authors: Grzegorz
authors: G
authors: Wielgoszewski
authors: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors: Grzegorz
authors: G
authors: Jóźwiak
authors: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors: Michał
authors: M
authors: Babij
authors: Wrocław University of Technology, Faculty of Mechanical Engineering, ul. I. Łukasiewicza 5, PL-50371 Wrocław, Poland.
authors: Tomasz
authors: T
authors: Baraniecki
authors: University at Albany, College of Nanoscale Science and Engineering, 257 Fuller Road, Albany, NY 12203, USA.
authors: Robert
authors: R
authors: Geer
authors: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors: Teodor
authors: T
authors: Gotszalk
keywords: Scanning thermal microscopy; Thermal resistance; Through-silicon vias