title: Electrodeposition of gallium in the presence of NH₄Cl in an ionic liquid: hints for GaN formation.
abstract: Group III-V semiconductors are important in the production of a variety of optoelectronic devices. At present, these semiconductors are synthesized by high vacuum techniques. Here we report on the electrochemical deposition of GaN which seems to form in quite a thin layer from NH4Cl and GaCl3 in an ionic liquid.
authors: Institute of Electrochemistry, Clausthal University of Technology, Arnold-Sommerfeld-Str 6, 38678 Clausthal-Zellerfeld, Germany. natalia.borissenko@tu-clausthal.de.
authors: Abhishek
authors: A
authors: Lahiri
authors: Natalia
authors: N
authors: Borisenko
authors: Andriy
authors: A
authors: Borodin
authors: Frank
authors: F
authors: Endres