title: Direct laser writing of air-stable p-n junctions in graphene.
abstract: Photo-oxidation of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene has been exploited to develop a novel means of spatially modulating doping in graphene. The degree of n-doping of initially p-type graphene can be varied by laser irradiation time or intensity with carrier density change up to ∼7 × 10(12) cm(-2). This n-doping approach is demonstrated as an effective means of creating p-n junctions in graphene. The ability to direct-write arbitrary shapes and patterns of n-doped regions in graphene simply by scanning a laser source should facilitate the exploitation of p-n junctions for a variety of electronic and optoelectronic device applications.
authors: Department of Materials Science and Engineering, University of Illinois , Urbana, Illinois 61801, United States.
authors: Byung Hwa
authors: BH
authors: Seo
authors: Jongmin
authors: J
authors: Youn
authors: Moonsub
authors: M
authors: Shim
keywords: CVD graphene; TIPS-pentacene; direct laser writing; n-type doping; photocurrent; p−n junction