title: Optical nonlinearity in Cu₂CdSnS₄ and α/β-Cu₂ZnSiS₄: diamond-like semiconductors with high laser-damage thresholds.
abstract: Cu2CdSnS4 and α/β-Cu2ZnSiS4 meet several criteria for promising nonlinear optical materials for use in the infrared (IR) region. Both are air-stable, crystallize in noncentrosymmetric space groups, and possess high thermal stabilities. Cu2CdSnS4 and α/β-Cu2ZnSiS4 display wide ranges of optical transparency, 1.4-25 and 0.7-25 μm, respectively, and have relatively large second-order nonlinearity as well as phase matchability for wide regions in the IR. The laser-damage threshold (LDT) for Cu2CdSnS4 is 0.2 GW/cm(2), whereas α/β-Cu2ZnSiS4 has a LDT of 2.0 GW/cm(2) for picosecond near-IR excitation. Both compounds also exhibit efficient third-order nonlinearity. Electronic structure calculations provide insight into the variation in properties.
authors: Department of Chemistry and Biochemistry, Duquesne University , Pittsburgh, Pennsylvania 15282, United States.
authors: Kimberly A
authors: KA
authors: Rosmus
authors: Jacilynn A
authors: JA
authors: Brant
authors: Stephen D
authors: SD
authors: Wisneski
authors: Daniel J
authors: DJ
authors: Clark
authors: Yong Soo
authors: YS
authors: Kim
authors: Joon I
authors: JI
authors: Jang
authors: Carl D
authors: CD
authors: Brunetta
authors: Jian-Han
authors: JH
authors: Zhang
authors: Matthew N
authors: MN
authors: Srnec
authors: Jennifer A
authors: JA
authors: Aitken