title: p-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy.
abstract: Micro-Raman scattering and X-ray photoelectron spectroscopy were employed to investigate Mg-doped GaN nanowires. With the increase of Mg doping level, pronounced Mg-induced local vibrational modes were observed. The evolution of longitudinal optical phonon-plasmon coupled mode, together with detailed X-ray photoelectron spectroscopy studies, show that the near-surface region of nanowires can be transformed from weakly n-type to p-type with the increase of Mg doping.
authors: Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC H3A 0E9, Canada. zetian.mi@mcgill.ca.
authors: Q
authors: Q
authors: Wang
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authors: X
authors: Liu
authors: M G
authors: MG
authors: Kibria
authors: S
authors: S
authors: Zhao
authors: H P T
authors: HP
authors: Nguyen
authors: K H
authors: KH
authors: Li
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authors: Z
authors: Mi
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authors: T
authors: Gonzalez
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authors: MP
authors: Andrews