title: Surface chemical and local electronic properties of Al(x)Ga(1-x)N epi-layers grown by MOCVD.
abstract: The surface chemical state and local electronic structure of Al(x)Ga(1-x)N (x = 0~0.45) epi-layers have been systematically investigated by X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) spectroscopy. The results show that the surface of Al(x)Ga(1-x)N is a composite of oxide and nitride of gallium and aluminum. In addition, it was identified that the Ga-O components were converted to Al-O components when the Al(x)Ga(1-x)N sample was exposed to air. The EXAFS analysis also reveals that the Ga-N and Ga-Al bond lengths are independent of the Al composition, whereas the Ga-Ga bond length is a function of Al composition.
authors.forename: Shuchang
authors.initials: S
authors.lastname: Wang
authors.forename: Xiong
authors.initials: X
authors.lastname: Zhang
authors.forename: Zhe Chuan
authors.initials: ZC
authors.lastname: Feng
authors.forename: Yiping
authors.initials: Y
authors.lastname: Cui