title: Strongly correlated alignment of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors.
abstract: The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.
authors.affiliation: LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau (France). chang-hyun.kim@polytechnique.edu.
authors.forename: Chang-Hyun
authors.initials: CH
authors.lastname: Kim
authors.forename: Htay
authors.initials: H
authors.lastname: Hlaing
authors.forename: Marcia M
authors.initials: MM
authors.lastname: Payne
authors.forename: Kevin G
authors.initials: KG
authors.lastname: Yager
authors.forename: Yvan
authors.initials: Y
authors.lastname: Bonnassieux
authors.forename: Gilles
authors.initials: G
authors.lastname: Horowitz
authors.forename: John E
authors.initials: JE
authors.lastname: Anthony
authors.forename: Ioannis
authors.initials: I
authors.lastname: Kymissis
keywords: charge transport; crystallinity; diF-TEG-ADT; field-effect transistors; semiconductors