title: The secondary X-ray fluorescence and absorption near the interface of multi-material: case of EDS microanalysis.
abstract: A simple model is proposed to take into account secondary X-ray fluorescence and absorption effects near the interface. This model is based on the investigation of the shape change of the first derivative equation that can fit the sigmoidal EDS profile obtained when a high vacuum electron beam passes through the interface of two adjacent materials. The contribution of the photoelectric absorption of primary X-rays (characteristic and Bremsstrahlung) and the secondary fluorescence on the degradation of the X-ray spatial resolution can be easily quantified. The close agreement between the simulated (Monte Carlo simulation using the Casino software) and the experimental data serves to assess the reliability of this developed model.
authors.affiliation: Univ-Lille Nord de France, Ecole des Mines de Douai, 941, rue Charles Bourseul BP 10838, 59500 Douai, France.
authors.forename: A
authors.initials: A
authors.lastname: Zoukel
authors.affiliation: Univ-Lille Nord de France, Ecole des Mines de Douai, 941, rue Charles Bourseul BP 10838, 59500 Douai, France. Electronic address: lahcen.khouchaf@mines-douai.fr.
authors.forename: L
authors.initials: L
authors.lastname: Khouchaf
keywords: EDS microanalysis; EDS profile; Interface; Lateral resolution; Secondary X-ray fluorescence; X-ray absorption