title: Scandium effect on the luminescence of Er-Sc silicates prepared from multi-nanolayer films.
abstract: Polycrystalline Er-Sc silicates (Er x Sc2-x Si2O7 and Er x Sc2-x SiO5) were fabricated using multilayer nanostructured films of Er2O3/SiO2/Sc2O3 deposited on SiO2/Si substrates by RF sputtering and thermal annealing at high temperature. The films were characterized by synchrotron radiation grazing incidence X-ray diffraction, cross-sectional transmission electron microscopy, energy-dispersive X-ray spectroscopy, and micro-photoluminescence measurements. The Er-Sc silicate phase Er x Sc2-x Si2O7 is the dominant film, and Er and Sc are homogeneously distributed after thermal treatment because of the excess of oxygen from SiO2 interlayers. The Er concentration of 6.7 × 10(21) atoms/cm(3) was achieved due to the presence of Sc that dilutes the Er concentration and generates concentration quenching. During silicate formation, the erbium diffusion coefficient in the silicate phase is estimated to be 1 × 10(-15) cm(2)/s at 1,250°C. The dominant Er x Sc2 - x Si2O7 layer shows a room-temperature photoluminescence peak at 1,537 nm with the full width at half maximum (FWHM) of 1.6 nm. The peak emission shift compared to that of the Y-Er silicate (where Y and Er have almost the same ionic radii) and the narrow FWHM are due to the small ionic radii of Sc(3+) which enhance the crystal field strength affecting the optical properties of Er(3+) ions located at the well-defined lattice sites of the Sc silicate. The Er-Sc silicate with narrow FWHM opens a promising way to prepare photonic crystal light-emitting devices.
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
authors.forename: Adel
authors.initials: A
authors.lastname: Najar
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan ; NTT Nanophotonics Center, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
authors.forename: Hiroo
authors.initials: H
authors.lastname: Omi
authors.affiliation: NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan ; NTT Nanophotonics Center, NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
authors.forename: Takehiko
authors.initials: T
authors.lastname: Tawara
keywords: Photoluminescence; Rare-earth doping; Thin films
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