title: Multi-spectral imaging with infrared sensitive organic light emitting diode.
abstract: Commercially available near-infrared (IR) imagers are fabricated by integrating expensive epitaxial grown III-V compound semiconductor sensors with Si-based readout integrated circuits (ROIC) by indium bump bonding which significantly increases the fabrication costs of these image sensors. Furthermore, these typical III-V compound semiconductors are not sensitive to the visible region and thus cannot be used for multi-spectral (visible to near-IR) sensing. Here, a low cost infrared (IR) imaging camera is demonstrated with a commercially available digital single-lens reflex (DSLR) camera and an IR sensitive organic light emitting diode (IR-OLED). With an IR-OLED, IR images at a wavelength of 1.2 µm are directly converted to visible images which are then recorded in a Si-CMOS DSLR camera. This multi-spectral imaging system is capable of capturing images at wavelengths in the near-infrared as well as visible regions.
authors.affiliation: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (USA).
authors.forename: Do Young
authors.initials: DY
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (USA).
authors.forename: Tzung-Han
authors.initials: TH
authors.lastname: Lai
authors.affiliation: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (USA).
authors.forename: Jae Woong
authors.initials: JW
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (USA).
authors.forename: Jesse R
authors.initials: JR
authors.lastname: Manders
authors.affiliation: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (USA).
authors.forename: Franky
authors.initials: F
authors.lastname: So
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