title: Novel ultra-low temperature co-fired microwave dielectric ceramic at 400 degrees and its chemical compatibility with base metal.
abstract: A novel NaAgMoO4 material with spinel-like structure was synthesized by using the solid state reaction method and the ceramic sample was well densified at an extreme low sintering temperature about 400°C. Rietveld refinement of the crystal structure was performed using FULLPROF program and the cell parameters are a = b = c = 9.22039 Å with a space group F D -3 M (227). High performance microwave dielectric properties, with a permittivity ~7.9, a Qf value ~33,000 GHz and a temperature coefficient of resonant frequency ~-120 ppm/°C, were obtained. From X-ray diffraction (XRD) and Energy Dispersive Spectrometer (EDS) analysis of the co-fired sample, it was found that the NaAgMoO4 ceramic is chemically compatible with both silver and aluminum at the sintering temperature and this makes it a promising candidate for the ultra-low temperature co-fired ceramics technology. Analysis of infrared and THz spectra indicated that dielectric polarizability at microwave region of the NaAgMoO4 ceramic was equally contributed by ionic displasive and electronic polarizations. Its small microwave dielectric permittivity can also be explained well by the Shannon's additive rule.
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China.
authors.forename: Zhou
authors.initials: Z
authors.lastname: Di
authors.affiliation: Micro-optoelectronic Systems Laboratories, Xi'an Technological University, Xi'an 710032, Shaanxi, China.
authors.forename: Pang
authors.initials: P
authors.lastname: Li-Xia
authors.affiliation: National Synchrotron Radiation Laboratory, University of Science and Technology of China, Anhui, 230029, Hefei, China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Ze-Ming
authors.affiliation: Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu, 210093, China.
authors.forename: Jin
authors.initials: J
authors.lastname: Biao-Bing
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China.
authors.forename: Yao
authors.initials: Y
authors.lastname: Xi