title: Enhancement of ferroelectric Curie temperature in BaTiO3 films via strain-induced defect dipole alignment.
abstract: The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO3 to >800 °C. Advances in thin-film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics.
authors.affiliation: Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL, 61801, USA; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
authors.forename: Anoop R
authors.initials: AR
authors.lastname: Damodaran
authors.forename: Eric
authors.initials: E
authors.lastname: Breckenfeld
authors.forename: Zuhuang
authors.initials: Z
authors.lastname: Chen
authors.forename: Sungki
authors.initials: S
authors.lastname: Lee
authors.forename: Lane W
authors.initials: LW
authors.lastname: Martin
keywords: BaTiO3; defects; epitaxy; ferroelectric; thin film