title: Novel field-effect Schottky barrier transistors based on graphene-MoS2 heterojunctions.
abstract: Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V · s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 10(5)) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm(2)/V · s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China [3].
authors.forename: He
authors.initials: H
authors.lastname: Tian
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China [3].
authors.forename: Zhen
authors.initials: Z
authors.lastname: Tan
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China [3].
authors.forename: Can
authors.initials: C
authors.lastname: Wu
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China [3].
authors.forename: Xiaomu
authors.initials: X
authors.lastname: Wang
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Mohammad Ali
authors.initials: MA
authors.lastname: Mohammad
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Dan
authors.initials: D
authors.lastname: Xie
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Yang
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Wang
authors.affiliation: Physical Science and Engineering division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.affiliation: 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.
authors.forename: Tian-Ling
authors.initials: TL
authors.lastname: Ren
references.citation: Nat Mater. 2012 Sep;11(9):764-7
references.pmid: 22842512
references.citation: Nat Commun. 2013;4:1624
references.pmid: 23535645
references.citation: Nanoscale. 2012 Apr 7;4(7):2272-7
references.pmid: 22214995
references.citation: Nanoscale. 2013 Feb 7;5(3):890-4
references.pmid: 23247540
references.citation: Phys Rev Lett. 2008 May 23;100(20):206803
references.pmid: 18518566
references.citation: Science. 2012 Jun 1;336(6085):1140-3
references.pmid: 22604723
references.citation: ACS Nano. 2013 Apr 23;7(4):3246-52
references.pmid: 23510133
references.citation: Science. 2008 Feb 29;319(5867):1229-32
references.pmid: 18218865
references.citation: Nat Nanotechnol. 2008 Apr;3(4):206-9
references.pmid: 18654504
references.citation: Nat Mater. 2007 Mar;6(3):183-91
references.pmid: 17330084
references.citation: Nat Nanotechnol. 2011 Mar;6(3):147-50
references.pmid: 21278752
references.citation: Nat Mater. 2013 Sep;12(9):815-20
references.pmid: 23793161
references.citation: Nano Lett. 2012 Sep 12;12(9):4674-80
references.pmid: 22862813
references.citation: Nature. 2009 Jun 11;459(7248):820-3
references.pmid: 19516337
references.citation: Nat Mater. 2013 Mar;12(3):246-52
references.pmid: 23241535
references.citation: Nano Lett. 2012 Mar 14;12(3):1538-44
references.pmid: 22369470
references.citation: Science. 2004 Oct 22;306(5696):666-9
references.pmid: 15499015
references.citation: Nat Nanotechnol. 2013 Dec;8(12):952-8
references.pmid: 24162001
references.citation: Nat Nanotechnol. 2013 Feb;8(2):100-3
references.pmid: 23263726
references.citation: Nat Nanotechnol. 2013 Mar;8(3):147-8
references.pmid: 23459546
references.citation: Phys Rev Lett. 2007 Mar 30;98(13):136805
references.pmid: 17501230
references.citation: Nano Lett. 2012 Aug 8;12(8):4013-7
references.pmid: 22799885
references.citation: Phys Rev Lett. 2007 Nov 23;99(21):216802
references.pmid: 18233240
references.citation: Nat Nanotechnol. 2013 Nov;8(11):826-30
references.pmid: 24141541
references.citation: Nano Lett. 2008 Mar;8(3):902-7
references.pmid: 18284217
references.citation: Proc Natl Acad Sci U S A. 2005 Jul 26;102(30):10451-3
references.pmid: 16027370
references.citation: ACS Nano. 2012 Jan 24;6(1):74-80
references.pmid: 22165908
references.citation: Science. 2012 Feb 24;335(6071):947-50
references.pmid: 22300848
references.citation: Nature. 2007 Jul 26;448(7152):457-60
references.pmid: 17653188
references.citation: Phys Rev Lett. 2002 Sep 2;89(10):106801
references.pmid: 12225214
references.citation: Nano Lett. 2009 Jul;9(7):2571-4
references.pmid: 19496554
references.citation: ACS Nano. 2011 Oct 25;5(10):7707-12
references.pmid: 21902203
references.citation: Science. 2008 Jul 18;321(5887):385-8
references.pmid: 18635798