title: Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy.
abstract: We describe the application of scattering-type near-field optical microscopy to characterize various semiconducting materials using the electron storage ring Metrology Light Source (MLS) as a broadband synchrotron radiation source. For verifying high-resolution imaging and nano-FTIR spectroscopy we performed scans across nanoscale Si-based surface structures. The obtained results demonstrate that a spatial resolution below 40 nm can be achieved, despite the use of a radiation source with an extremely broad emission spectrum. This approach allows not only for the collection of optical information but also enables the acquisition of near-field spectral data in the mid-infrared range. The high sensitivity for spectroscopic material discrimination using synchrotron radiation is presented by recording near-field spectra from thin films composed of different materials used in semiconductor technology, such as SiO2, SiC, SixNy, and TiO2.
authors.forename: Peter
authors.initials: P
authors.lastname: Hermann
authors.forename: Arne
authors.initials: A
authors.lastname: Hoehl
authors.forename: Georg
authors.initials: G
authors.lastname: Ulrich
authors.forename: Claudia
authors.initials: C
authors.lastname: Fleischmann
authors.forename: Antje
authors.initials: A
authors.lastname: Hermelink
authors.forename: Bernd
authors.initials: B
authors.lastname: Kästner
authors.forename: Piotr
authors.initials: P
authors.lastname: Patoka
authors.forename: Andrea
authors.initials: A
authors.lastname: Hornemann
authors.forename: Burkhard
authors.initials: B
authors.lastname: Beckhoff
authors.forename: Eckart
authors.initials: E
authors.lastname: Rühl
authors.forename: Gerhard
authors.initials: G
authors.lastname: Ulm