title: Van der Waals epitaxy and characterization of hexagonal boron nitride nanosheets on graphene.
abstract: Graphene is highly sensitive to environmental influences, and thus, it is worthwhile to deposit protective layers on graphene without impairing its excellent properties. Hexagonal boron nitride (h-BN), a well-known dielectric material, may afford the necessary protection. In this research, we demonstrated the van der Waals epitaxy of h-BN nanosheets on mechanically exfoliated graphene by chemical vapor deposition, using borazine as the precursor to h-BN. The h-BN nanosheets had a triangular morphology on a narrow graphene belt but a polygonal morphology on a larger graphene film. The h-BN nanosheets on graphene were highly crystalline, except for various in-plane lattice orientations. Interestingly, the h-BN nanosheets preferred to grow on graphene than on SiO2/Si under the chosen experimental conditions, and this selective growth spoke of potential promise for application to the preparation of graphene/h-BN superlattice structures fabricated on SiO2/Si.
authors.affiliation: State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, 109 Deya Road, Changsha 410073, People's Republic of China.
authors.forename: Yangxi
authors.initials: Y
authors.lastname: Song
authors.affiliation: State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, 109 Deya Road, Changsha 410073, People's Republic of China.
authors.forename: Changrui
authors.initials: C
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Advanced Ceramic Fibers and Composites, College of Aerospace Science and Engineering, National University of Defense Technology, 109 Deya Road, Changsha 410073, People's Republic of China.
authors.forename: Bin
authors.initials: B
authors.lastname: Li
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China.
authors.forename: Guqiao
authors.initials: G
authors.lastname: Ding
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China.
authors.forename: Da
authors.initials: D
authors.lastname: Jiang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China.
authors.forename: Haomin
authors.initials: H
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Xie
keywords: Chemical vapor deposition; Graphene; Hexagonal boron nitride; Nanosheets; van der Waals epitaxy
references.citation: ACS Nano. 2012 Oct 23;6(10):9314-9
references.pmid: 23009029
references.citation: Chem Rev. 2010 Jan;110(1):132-45
references.pmid: 19610631
references.citation: Nano Lett. 2012 Feb 8;12(2):714-8
references.pmid: 22220633
references.citation: ACS Nano. 2013 Jan 22;7(1):385-95
references.pmid: 23244231
references.citation: Nat Mater. 2004 Jun;3(6):404-9
references.pmid: 15156198
references.citation: ACS Nano. 2012 Oct 23;6(10):8583-90
references.pmid: 22970651
references.citation: Nat Nanotechnol. 2010 Oct;5(10):722-6
references.pmid: 20729834
references.citation: Philos Trans A Math Phys Eng Sci. 2004 Nov 15;362(1824):2289-310
references.pmid: 15482980
references.citation: Science. 2007 Aug 17;317(5840):932-4
references.pmid: 17702939
references.citation: Nano Lett. 2007 Sep;7(9):2645-9
references.pmid: 17718584
references.citation: Science. 2004 Oct 22;306(5696):666-9
references.pmid: 15499015
references.citation: Nano Lett. 2012 Jan 11;12(1):161-6
references.pmid: 22111957
references.citation: Nat Mater. 2010 May;9(5):430-5
references.pmid: 20190771
references.citation: Nano Lett. 2012 Jun 13;12(6):2784-91
references.pmid: 22642717
references.citation: Proc Natl Acad Sci U S A. 2005 Jul 26;102(30):10451-3
references.pmid: 16027370
references.citation: Small. 2014 Jun 12;10(11):2293-9
references.pmid: 24599538
references.citation: Nano Lett. 2011 Mar 9;11(3):1106-10
references.pmid: 21322597
references.citation: Nanotechnology. 2012 Oct 19;23(41):415605
references.pmid: 23011199
references.citation: Nano Lett. 2010 Oct 13;10(10):4134-9
references.pmid: 20812716
references.citation: Nano Lett. 2010 Aug 11;10(8):3209-15
references.pmid: 20698639
references.citation: Phys Rev B Condens Matter. 1995 Feb 15;51(7):4606-4613
references.pmid: 9979307
references.citation: Nat Mater. 2003 May;2(5):312-5
references.pmid: 12692532