title: Metal-etching-free direct delamination and transfer of single-layer graphene with a high degree of freedom.
abstract: A method of graphene transfer without metal etching is developed to minimize the contamination of graphene in the transfer process and to endow the transfer process with a greater degree of freedom. The method involves direct delamination of single-layer graphene from a growth substrate, resulting in transferred graphene with nearly zero Dirac voltage due to the absence of residues that would originate from metal etching. Several demonstrations are also presented to show the high degree of freedom and the resulting versatility of this transfer method.
authors.affiliation: Graphene Research Center, Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Republic of Korea.
authors.forename: Sang Yoon
authors.initials: SY
authors.lastname: Yang
authors.forename: Joong Gun
authors.initials: JG
authors.lastname: Oh
authors.forename: Dae Yool
authors.initials: DY
authors.lastname: Jung
authors.forename: HongKyw
authors.initials: H
authors.lastname: Choi
authors.forename: Chan Hak
authors.initials: CH
authors.lastname: Yu
authors.forename: Jongwoo
authors.initials: J
authors.lastname: Shin
authors.forename: Choon-Gi
authors.initials: CG
authors.lastname: Choi
authors.forename: Byung Jin
authors.initials: BJ
authors.lastname: Cho
authors.forename: Sung-Yool
authors.initials: SY
authors.lastname: Choi
keywords: direct delamination; graphene; graphene transistors; metal etching; transfer printing