title: Single-electron thermal noise.
abstract: We report the observation of thermal noise in the motion of single electrons in an ultimately small dynamic random access memory (DRAM). The nanometer-scale transistors that compose the DRAM resolve the thermal noise in single-electron motion. A complete set of fundamental tests conducted on this single-electron thermal noise shows that the noise perfectly follows all the aspects predicted by statistical mechanics, which include the occupation probability, the law of equipartition, a detailed balance, and the law of kT/C. In addition, the counting statistics on the directional motion (i.e., the current) of the single-electron thermal noise indicate that the individual electron motion follows the Poisson process, as it does in shot noise.
authors.forename: Katsuhiko
authors.initials: K
authors.lastname: Nishiguchi
authors.forename: Yukinori
authors.initials: Y
authors.lastname: Ono
authors.forename: Akira
authors.initials: A
authors.lastname: Fujiwara