title: Improved performance of ZnO light-emitting devices by introducing a hole-injection layer.
abstract: ZnO p-n homojunction light-emitting devices (LEDs) have been fabricated, and by introducing a p-type GaN as the hole-injection layer, the output power of the LEDs can reach 18.5 μW when the drive current is 60 mA, which is almost three orders of magnitude larger than the pristine LEDs without the hole-injection layer. The improved performance can be attributed to the extra holes injected into the p-ZnO layer from the p-GaN hole-injection layer.
authors.forename: Ying-Jie
authors.initials: YJ
authors.lastname: Lu
authors.forename: Hong-Fei
authors.initials: HF
authors.lastname: Li
authors.forename: Chong-Xin
authors.initials: CX
authors.lastname: Shan
authors.forename: Bing-Hui
authors.initials: BH
authors.lastname: Li
authors.forename: De-Zhen
authors.initials: DZ
authors.lastname: Shen
authors.forename: Li-Gong
authors.initials: LG
authors.lastname: Zhang
authors.forename: Siu-Fung
authors.initials: SF
authors.lastname: Yu