title: On-chip copper-dielectric interference filters for manufacturing of ambient light and proximity CMOS sensors.
abstract: Filter technologies implemented on CMOS image sensors for spectrally selective applications often use a combination of on-chip organic resists and an external substrate with multilayer dielectric coatings. The photopic-like and near-infrared bandpass filtering functions respectively required by ambient light sensing and user proximity detection through time-of-flight can be fully integrated on chip with multilayer metal-dielectric filters. Copper, silicon nitride, and silicon oxide are the materials selected for a technological proof-of-concept on functional wafers, due to their immediate availability in front-end semiconductor fabs. Filter optical designs are optimized with respect to specific performance criteria, and the robustness of the designs regarding process errors are evaluated for industrialization purposes.
authors.forename: Laurent
authors.initials: L
authors.lastname: Frey
authors.forename: Lilian
authors.initials: L
authors.lastname: Masarotto
authors.forename: Patrick Gros
authors.initials: PG
authors.lastname: D'Aillon
authors.forename: Catherine
authors.initials: C
authors.lastname: Pellé
authors.forename: Marilyn
authors.initials: M
authors.lastname: Armand
authors.forename: Michel
authors.initials: M
authors.lastname: Marty
authors.forename: Clémence
authors.initials: C
authors.lastname: Jamin-Mornet
authors.forename: Sandrine
authors.initials: S
authors.lastname: Lhostis
authors.forename: Olivier
authors.initials: O
authors.lastname: Le Briz