title: Atomic layer deposition and characterization of Bi₂Te₃ thin films.
abstract: Bi2Te3 thin films were deposited by atomic layer deposition (ALD) from BiCl3 and (Et3Si)2Te at 160-300 °C. The process was studied in detail, and growth properties typical of ALD were verified. Films were stoichiometric with low impurity content. The film thickness was easily controlled with the number of deposition cycles. Properties of the ALD Bi2Te3 thin films were found to be comparable to those reported in literature for Bi2Te3 films made by other methods. Films crystallized to a rhombohedral phase, and there was a preferred orientation to the growth. Electrical and thermoelectric properties were also determined to be comparable to literature values.
authors.affiliation: †Department of Chemistry and ‡Department of Physics, University of Helsinki, 00014 Helsinki, Finland.
authors.forename: Tiina
authors.initials: T
authors.lastname: Sarnet
authors.affiliation: †Department of Chemistry and ‡Department of Physics, University of Helsinki, 00014 Helsinki, Finland.
authors.forename: Timo
authors.initials: T
authors.lastname: Hatanpää
authors.affiliation: †Department of Chemistry and ‡Department of Physics, University of Helsinki, 00014 Helsinki, Finland.
authors.forename: Esa
authors.initials: E
authors.lastname: Puukilainen
authors.affiliation: †Department of Chemistry and ‡Department of Physics, University of Helsinki, 00014 Helsinki, Finland.
authors.forename: Miika
authors.initials: M
authors.lastname: Mattinen
authors.affiliation: †Department of Chemistry and ‡Department of Physics, University of Helsinki, 00014 Helsinki, Finland.
authors.forename: Marko
authors.initials: M
authors.lastname: Vehkamäki
authors.affiliation: †Department of Chemistry and ‡Department of Physics, University of Helsinki, 00014 Helsinki, Finland.
authors.forename: Kenichiro
authors.initials: K
authors.lastname: Mizohata
authors.affiliation: †Department of Chemistry and ‡Department of Physics, University of Helsinki, 00014 Helsinki, Finland.
authors.forename: Mikko
authors.initials: M
authors.lastname: Ritala
authors.affiliation: †Department of Chemistry and ‡Department of Physics, University of Helsinki, 00014 Helsinki, Finland.
authors.forename: Markku
authors.initials: M
authors.lastname: Leskelä