title: Oxygen etching of thick MoS2 films.
abstract: Oxygen annealing of thick MoS2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.
authors.affiliation: Department of Chemistry, University of California, Riverside, CA 92521, USA.
authors.forename: Robert
authors.initials: R
authors.lastname: Ionescu
authors.forename: Aaron
authors.initials: A
authors.lastname: George
authors.forename: Isaac
authors.initials: I
authors.lastname: Ruiz
authors.forename: Zachary
authors.initials: Z
authors.lastname: Favors
authors.forename: Zafer
authors.initials: Z
authors.lastname: Mutlu
authors.forename: Chueh
authors.initials: C
authors.lastname: Liu
authors.forename: Kazi
authors.initials: K
authors.lastname: Ahmed
authors.forename: Ryan
authors.initials: R
authors.lastname: Wu
authors.forename: Jong S
authors.initials: JS
authors.lastname: Jeong
authors.forename: Lauro
authors.initials: L
authors.lastname: Zavala
authors.forename: K Andre
authors.initials: KA
authors.lastname: Mkhoyan
authors.forename: Mihri
authors.initials: M
authors.lastname: Ozkan
authors.forename: Cengiz S
authors.initials: CS
authors.lastname: Ozkan