title: Dynamic observation of phase transformation behaviors in indium(III) selenide nanowire based phase change memory.
abstract: Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM.
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , No. 1001, University Road, Hsinchu 300, Taiwan.
authors.forename: Yu-Ting
authors.initials: YT
authors.lastname: Huang
authors.forename: Chun-Wei
authors.initials: CW
authors.lastname: Huang
authors.forename: Jui-Yuan
authors.initials: JY
authors.lastname: Chen
authors.forename: Yi-Hsin
authors.initials: YH
authors.lastname: Ting
authors.forename: Kuo-Chang
authors.initials: KC
authors.lastname: Lu
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh
authors.forename: Wen-Wei
authors.initials: WW
authors.lastname: Wu
keywords: In2Se3; PCRAM; in situ TEM; nanodevices; nonvolatile memory; phase change