title: The chemistry of imperfections in N-graphene.
abstract: Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material still remains an enigma. Here we demonstrate a method to handle N-impurities in graphene, which allows efficient conversion of pyridinic N to graphitic N and therefore precise tuning of the charge carrier concentration. By applying photoemission spectroscopy and density functional calculations, we show that the electron doping effect of graphitic N is strongly suppressed by pyridinic N. As the latter is converted into the graphitic configuration, the efficiency of doping rises up to half of electron charge per N atom.
authors.affiliation: St. Petersburg State University , 198504 St. Petersburg, Russia.
authors.forename: Dmitry
authors.initials: D
authors.lastname: Usachov
authors.forename: Alexander
authors.initials: A
authors.lastname: Fedorov
authors.forename: Oleg
authors.initials: O
authors.lastname: Vilkov
authors.forename: Boris
authors.initials: B
authors.lastname: Senkovskiy
authors.forename: Vera K
authors.initials: VK
authors.lastname: Adamchuk
authors.forename: Lada V
authors.initials: LV
authors.lastname: Yashina
authors.forename: Andrey A
authors.initials: AA
authors.lastname: Volykhov
authors.forename: Mani
authors.initials: M
authors.lastname: Farjam
authors.forename: Nikolay I
authors.initials: NI
authors.lastname: Verbitskiy
authors.forename: Alexander
authors.initials: A
authors.lastname: Grüneis
authors.forename: Clemens
authors.initials: C
authors.lastname: Laubschat
authors.forename: Denis V
authors.initials: DV
authors.lastname: Vyalikh
keywords: ARPES; Graphene; XPS; electronic structure; nitrogen doping