title: An ionizing radiation sensor using a pre-programmed MAHAOS device.
abstract: Metal-aluminum oxide-hafnium aluminum oxide-silicon oxide-silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) were studied regarding the first known characterization of the ionization radiation sensing response. The change of threshold voltage V(T) for a MAHAOS device after gamma ray exposure had a strong correlation to the total ionization dose (TID) of gamma radiation up to at least 5 Mrad TID. In this paper, the gamma radiation response performances of the pre-programmed and virgin (non-pre-programmed) MAHAOS devices are presented. The experimental data show that the change of VT for the pre-programmed MAHAOS device with gamma irradiation is very significant. The data of pre-programmed MAHAOS devices written by 5 Mrad TID of gamma radiation was also stable for a long time with data storage. The sensing of gamma radiation by pre-programmed MAHAOS devices with high k stack gate dielectric reported in this study has demonstrated their potential application for non-volatile ionizing radiation sensing technology in the future.
authors.affiliation: Department of Opto-Electronic System Engineering, Minghsin University of Science and Technology, Xinxing Rd, 1, Xinfeng 30401, Taiwan. wchsieh@must.edu.tw.
authors.forename: Wen-Ching
authors.initials: WC
authors.lastname: Hsieh
authors.affiliation: ETOMS Electronics Corp, 12, Innovation 1st. Rd, Science-Based Industrial Park, Hsin-Chu 300, Taiwan. danieleewww@gmail.com.
authors.forename: Hao-Tien Daniel
authors.initials: HT
authors.lastname: Lee
authors.affiliation: Electronic Engineering Department, Southern Taiwan University of Science and Technology, 1, Nan-Tai Street, Yungkang District, Tainan 710, Taiwan. fcjong@mail.stust.edu.tw.
authors.forename: Fuh-Cheng
authors.initials: FC
authors.lastname: Jong
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry*; D005720:Gamma Rays; D006195:Hafnium / Q000737:chemistry*; D010087:Oxides / Q000737:chemistry*; D011829:Radiation Dosage; D011839:Radiation, Ionizing; D012825:Silicon / Q000737:chemistry*
chemical_list: D010087:Oxides; C545179:hafnium oxide; D000537:Aluminum Oxide; D006195:Hafnium; D012825:Silicon