title: Two-dimensional high efficiency thin-film silicon solar cells with a lateral light trapping architecture.
abstract: Introducing light trapping structures into thin-film solar cells has the potential to enhance their solar energy harvesting as well as the performance of the cells; however, current strategies have been focused mainly on harvesting photons without considering the light re-escaping from cells in two-dimensional scales. The lateral out-coupled solar energy loss from the marginal areas of cells has reduced the electrical yield indeed. We therefore herein propose a lateral light trapping structure (LLTS) as a means of improving the light-harvesting capacity and performance of cells, achieving a 13.07% initial efficiency and greatly improved current output of a-Si:H single-junction solar cell based on this architecture. Given the unique transparency characteristics of thin-film solar cells, this proposed architecture has great potential for integration into the windows of buildings, microelectronics and other applications requiring transparent components.
authors.affiliation: 1] Institute of Photo Electronics Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, P. R. China [2].
authors.forename: Jia
authors.initials: J
authors.lastname: Fang
authors.affiliation: 1] Institute of Photo Electronics Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, P. R. China [2].
authors.forename: Bofei
authors.initials: B
authors.lastname: Liu
authors.affiliation: Institute of Photo Electronics Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, P. R. China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Institute of Photo Electronics Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Tianjin 300071, P. R. China.
authors.forename: Xiaodan
authors.initials: X
authors.lastname: Zhang
mesh_terms: D008027:Light; D012825:Silicon / Q000737:chemistry*; D012993:Solar Energy
chemical_list: D012825:Silicon