title: Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling.
abstract: The development of graphene electronic devices produced by industry relies on efficient control of heat transfer from the graphene sheet to its environment. In nanoscale devices, heat is one of the major obstacles to the operation of such devices at high frequencies. Here we have studied the transport of hot carriers in epitaxial graphene sheets on 6H-SiC (0001) substrates with and without hydrogen intercalation by driving the device into the non-equilibrium regime. Interestingly, we have demonstrated that the energy relaxation time of the device without hydrogen intercalation is two orders of magnitude shorter than that with hydrogen intercalation, suggesting application of epitaxial graphene in high-frequency devices which require outstanding heat exchange with an outside cooling source.
authors.affiliation: Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan. shuntsunglo@gmail.com randolph.elmquist@nist.gov.
authors.forename: Fan-Hung
authors.initials: FH
authors.lastname: Liu
authors.forename: Shun-Tsung
authors.initials: ST
authors.lastname: Lo
authors.forename: Chiashain
authors.initials: C
authors.lastname: Chuang
authors.forename: Tak-Pong
authors.initials: TP
authors.lastname: Woo
authors.forename: Hsin-Yen
authors.initials: HY
authors.lastname: Lee
authors.forename: Chieh-Wen
authors.initials: CW
authors.lastname: Liu
authors.forename: Chieh-I
authors.initials: CI
authors.lastname: Liu
authors.forename: Lung-I
authors.initials: LI
authors.lastname: Huang
authors.forename: Cheng-Hua
authors.initials: CH
authors.lastname: Liu
authors.forename: Yanfei
authors.initials: Y
authors.lastname: Yang
authors.forename: Chih-Yuan S
authors.initials: CY
authors.lastname: Chang
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.forename: Patrick C
authors.initials: PC
authors.lastname: Mende
authors.forename: Randall M
authors.initials: RM
authors.lastname: Feenstra
authors.forename: Randolph E
authors.initials: RE
authors.lastname: Elmquist
authors.forename: Chi-Te
authors.initials: CT
authors.lastname: Liang