title: Germanium p-i-n avalanche photodetector fabricated by point defect healing process.
abstract: In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below V(R)=5  V), low operating voltage (avalanche breakdown voltage=8-13  V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ~10¹⁷ cm⁻³). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.
authors.forename: Jaewoo
authors.initials: J
authors.lastname: Shim
authors.forename: Dong-Ho
authors.initials: DH
authors.lastname: Kang
authors.forename: Gwangwe
authors.initials: G
authors.lastname: Yoo
authors.forename: Seong-Taek
authors.initials: ST
authors.lastname: Hong
authors.forename: Woo-Shik
authors.initials: WS
authors.lastname: Jung
authors.forename: Bong Jin
authors.initials: BJ
authors.lastname: Kuh
authors.forename: Beomsuk
authors.initials: B
authors.lastname: Lee
authors.forename: Dongjae
authors.initials: D
authors.lastname: Shin
authors.forename: Kyoungho
authors.initials: K
authors.lastname: Ha
authors.forename: Gwang Sik
authors.initials: GS
authors.lastname: Kim
authors.forename: Hyun-Yong
authors.initials: HY
authors.lastname: Yu
authors.forename: Jungwoo
authors.initials: J
authors.lastname: Baek
authors.forename: Jin-Hong
authors.initials: JH
authors.lastname: Park