title: High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors.
abstract: In this paper, we report on the fabrication and optoelectronic properties of high sensitive phototransistors based on few-layered MoSe2 back-gated field-effect transistors, with a mobility of 19.7 cm² V⁻¹ s⁻¹ at room temperature. We obtained an ultrahigh photoresponsivity of 97.1 AW⁻¹ and an external quantum efficiency (EQE) of 22 666% using 532 nm laser excitation at room temperature. The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance. Thanks to their high photoresponsivity and external quantum efficiency, the few-layered MoSe2-based devices are promising for photoelectronic applications.
authors.forename: A
authors.initials: A
authors.lastname: Abderrahmane
authors.forename: P J
authors.initials: PJ
authors.lastname: Ko
authors.forename: T V
authors.initials: TV
authors.lastname: Thu
authors.forename: S
authors.initials: S
authors.lastname: Ishizawa
authors.forename: T
authors.initials: T
authors.lastname: Takamura
authors.forename: A
authors.initials: A
authors.lastname: Sandhu