title: Exploration of yttria films as gate dielectrics in sub-50 nm carbon nanotube field-effect transistors.
abstract: Thin yttria films were investigated for use as gate dielectrics in carbon nanotube field-effect transistors (CNTFETs) with the gate length scaled down to sub-50 nm size. The yttria film provided an omega-shaped gate dielectric with a low interface trap density, a low average sub-threshold swing of 74 mV per decade for both long and short CNTFETs, and a small drain-induced barrier lowering. It was also shown that the performance of CNTFETs increases with decreasing temperature, with an excellent sub-threshold swing of 22 mV per decade at liquid nitrogen temperatures. A method was developed to retrieve the interface trap density in CNTFETs and a low interface trap density of 5.2 × 10(6) cm(-1) was achieved, indicating the high electric quality of the yttria films.
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing, 100871, P. R. China. zyzhang@pku.edu.cn lmpeng@pku.edu.cn.
authors.forename: Li
authors.initials: L
authors.lastname: Ding
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Zhang
authors.forename: Jun
authors.initials: J
authors.lastname: Su
authors.forename: Qunqing
authors.initials: Q
authors.lastname: Li
authors.forename: Lian-Mao
authors.initials: LM
authors.lastname: Peng