title: Bandgap-engineered CdxZn1-xO nanowires as active regions for green-light-emitting diodes.
abstract: A green-light-emitting diode device was fabricated based on a p-type Sb-doped ZnO segments/Cd-alloyed ZnO/n-type ZnO film/heteronanowires array structure. The structures and chemical components of the heteronanowire sample were studied by energy dispersive spectrometer, x-ray photoelectron spectrometer, etc, from which the statuses of Cd and Sb in the sample were confirmed. Spatially resolved photoluminescence measurement on a single heteronanowire revealed a large bandgap shift in the Cd(x)Zn(1 - x)O active region. In electroluminescence characterizations, the device showed that the green emission was centered at 550 nm, suggesting the successful formation and functioning of the double heterojunction nanowire light-emitting diodes.
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
authors.forename: Boya
authors.initials: B
authors.lastname: Lai
authors.forename: Zuxin
authors.initials: Z
authors.lastname: Chen
authors.forename: Junming
authors.initials: J
authors.lastname: Zhang
authors.forename: Sheng
authors.initials: S
authors.lastname: Chu
authors.forename: Guang
authors.initials: G
authors.lastname: Chu
authors.forename: Rufang
authors.initials: R
authors.lastname: Peng