title: Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics.
abstract: This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p-n junction by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated lateral MoS2 p-n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of ∼7000%, specific detectivity of ∼5 × 10(10) Jones, and light switching ratio of ∼10(3)) and ideal rectifying behavior. The enhanced photoresponse and generation of open-circuit voltage (VOC) and short-circuit current (ISC) were understood to originate from the formation of a p-n junction after chemical doping. Due to the high photoresponse at low VD and VG attributed to its built-in potential, our MoS2 p-n diode made progress toward the realization of low-power operating photodevices. Thus, this study suggests an effective way to form a lateral p-n junction by the h-BN hard masking technique and to improve the photoresponse of MoS2 by the chemical doping process.
authors.affiliation: SKKU Advanced Institute of Nano-Technology (SAINT), ‡Center for Human Interface Nano Technology (HINT), and §Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746, Korea .
authors.forename: Min Sup
authors.initials: MS
authors.lastname: Choi
authors.forename: Deshun
authors.initials: D
authors.lastname: Qu
authors.forename: Daeyeong
authors.initials: D
authors.lastname: Lee
authors.forename: Xiaochi
authors.initials: X
authors.lastname: Liu
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.forename: Won Jong
authors.initials: WJ
authors.lastname: Yoo
keywords: chemical doping; homogeneous p−n junction; lateral junction; molybdenum disulfide; optoelectronics; two-dimensional materials