title: Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.
abstract: An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China.
authors.forename: Zhengzhong
authors.initials: Z
authors.lastname: Zhang
authors.forename: Liang
authors.initials: L
authors.lastname: Jiang