title: Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing.
abstract: We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, ‡Australian National Fabrication Facility, Research School of Physics and Engineering, and §Centre for Advanced Microscopy, The Australian National University , Canberra, ACT 0200, Australia.
authors.forename: Qian
authors.initials: Q
authors.lastname: Gao
authors.forename: Dhruv
authors.initials: D
authors.lastname: Saxena
authors.forename: Fan
authors.initials: F
authors.lastname: Wang
authors.forename: Lan
authors.initials: L
authors.lastname: Fu
authors.forename: Sudha
authors.initials: S
authors.lastname: Mokkapati
authors.forename: Yanan
authors.initials: Y
authors.lastname: Guo
authors.forename: Li
authors.initials: L
authors.lastname: Li
authors.forename: Jennifer
authors.initials: J
authors.lastname: Wong-Leung
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff
authors.forename: Hark Hoe
authors.initials: HH
authors.lastname: Tan
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish
keywords: III−V semiconductors; nanowire laser; nanowires; quantum efficiency; selective-area metal−organic vapor-phase epitaxy; wurtzite