title: Floating gate memory-based monolayer MoS2 transistor with metal nanocrystals embedded in the gate dielectrics.
abstract: Charge trapping layers are formed from different metallic nanocrystals in MoS2 -based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 10(5) and a long retention time of 10 years.
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Jingli
authors.initials: J
authors.lastname: Wang
authors.forename: Xuming
authors.initials: X
authors.lastname: Zou
authors.forename: Xiangheng
authors.initials: X
authors.lastname: Xiao
authors.forename: Lei
authors.initials: L
authors.lastname: Xu
authors.forename: Chunlan
authors.initials: C
authors.lastname: Wang
authors.forename: Changzhong
authors.initials: C
authors.lastname: Jiang
authors.forename: Johnny C
authors.initials: JC
authors.lastname: Ho
authors.forename: Ti
authors.initials: T
authors.lastname: Wang
authors.forename: Jinchai
authors.initials: J
authors.lastname: Li
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
keywords: MoS2; flash memory; floating gates; metallic nanocrystals; work functions