title: Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD.
abstract: With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2). X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN.
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Jin
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Senlin
authors.initials: S
authors.lastname: Li
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Hui
authors.initials: H
authors.lastname: Xiong
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Wu
authors.initials: W
authors.lastname: Tian
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Li
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Yanyan
authors.initials: Y
authors.lastname: Fang
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Zhihao
authors.initials: Z
authors.lastname: Wu
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Jiangnan
authors.initials: J
authors.lastname: Dai
authors.affiliation: Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
authors.forename: Jintong
authors.initials: J
authors.lastname: Xu
authors.affiliation: Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
authors.forename: Xiangyang
authors.initials: X
authors.lastname: Li
authors.affiliation: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Changqing
authors.initials: C
authors.lastname: Chen
keywords: GaN quantum dots; Low density; MOCVD; Thermal decomposition