title: Low carrier density epitaxial graphene devices on SiC.
abstract: The transport characteristics of graphene devices with low n- or p-type carrier density (∼10(10) -10(11) cm(-2) ), fabricated using a new process that results in minimal organic surface residues, are reported. The p-type molecular doping responsible for the low carrier densities is initiated by aqua regia. The resulting devices exhibit highly developed ν = 2 quantized Hall resistance plateaus at magnetic field strengths of less than 4 T.
authors.affiliation: National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899-8171; Department of Physics, Georgetown University, Washington, DC, 20057-1228.
authors.forename: Yanfei
authors.initials: Y
authors.lastname: Yang
authors.forename: Lung-I
authors.initials: LI
authors.lastname: Huang
authors.forename: Yasuhiro
authors.initials: Y
authors.lastname: Fukuyama
authors.forename: Fan-Hung
authors.initials: FH
authors.lastname: Liu
authors.forename: Mariano A
authors.initials: MA
authors.lastname: Real
authors.forename: Paola
authors.initials: P
authors.lastname: Barbara
authors.forename: Chi-Te
authors.initials: CT
authors.lastname: Liang
authors.forename: David B
authors.initials: DB
authors.lastname: Newell
authors.forename: Randolph E
authors.initials: RE
authors.lastname: Elmquist
keywords: aqua regia; carrier density; epitaxial graphene; quantum Hall plateau