title: Probing the internal electric field in GaN/AlGaN nanowire heterostructures.
abstract: We demonstrate the direct analysis of polarization-induced internal electric fields in single GaN/Al0.3Ga0.7N nanodiscs embedded in GaN/AlN nanowire heterostructures. Superposition of an external electric field with different polarity results in compensation or enhancement of the quantum-confined Stark effect in the nanodiscs. By field-dependent analysis of the low temperature photoluminescence energy and intensity, we prove the [0001̅]-polarity of the nanowires and determine the internal electric field strength to 1.5 MV/cm.
authors.affiliation: I. Physikalisches Institut, Justus-Liebig-Universität Gießen , Heinrich-Buff-Ring 16, D-35392 Gießen, Germany.
authors.forename: Jan
authors.initials: J
authors.lastname: Müssener
authors.forename: Jörg
authors.initials: J
authors.lastname: Teubert
authors.forename: Pascal
authors.initials: P
authors.lastname: Hille
authors.forename: Markus
authors.initials: M
authors.lastname: Schäfer
authors.forename: Jörg
authors.initials: J
authors.lastname: Schörmann
authors.forename: Maria
authors.initials: M
authors.lastname: de la Mata
authors.forename: Jordi
authors.initials: J
authors.lastname: Arbiol
authors.forename: Martin
authors.initials: M
authors.lastname: Eickhoff
keywords: GaN/AlGaN; Quantum-confined Stark effect; group III-nitride; internal polarization fields; microphotoluminescence; single nanowire