title: Facile fabrication of a well-ordered porous Cu-doped SnO2 thin film for H2S sensing.
abstract: Well-ordered Cu-doped and undoped SnO2 porous thin films with large specific surface areas have been fabricated on a desired substrate using a self-assembled soft template combined with simple physical cosputtering deposition. The Cu-doped SnO2 porous film gas sensor shows a significant enhancement in its sensing performance, including a high sensitivity, selectivity, and a fast response and recovery time. The sensitivity of the Cu-doped SnO2 porous sensor is 1 order of magnitude higher than that of the undoped SnO2 sensor, with average response and recovery times to 100 ppm of H2S of ∼ 10.1 and ∼ 42.4 s, respectively, at the optimal operating temperature of 180 °C. The well-defined porous sensors fabricated by the method also exhibit high reproducibility because of the accurately controlled fabrication process. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors with easy doping and multilayer porous nanostructure for practical sensing applications.
authors.affiliation: Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, and Collaborative Innovation Center of Suzhou Nano Science & Technology, Soochow University , Suzhou, Jiangsu 215123, China.
authors.forename: Shumin
authors.initials: S
authors.lastname: Zhang
authors.forename: Pingping
authors.initials: P
authors.lastname: Zhang
authors.forename: Yun
authors.initials: Y
authors.lastname: Wang
authors.forename: Yanyun
authors.initials: Y
authors.lastname: Ma
authors.forename: Jun
authors.initials: J
authors.lastname: Zhong
authors.forename: Xuhui
authors.initials: X
authors.lastname: Sun
keywords: H2S; SnO2; doping; gas sensor; metal oxide; porous film