title: Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor.
abstract: The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitting experimental data exhibits the quantum confinement effect, indicating greater suppression of Ioff than that in JL planar TFTs. The measured [Formula: see text] of -1.34 mV/°C in JL GAA nanosheet TFTs has smaller temperature dependence than that of -5.01 mV/°C in JL planar TFTs.
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, Section 2 Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Ya-Chi
authors.initials: YC
authors.lastname: Cheng
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, Section 2 Kuang Fu Road, Hsinchu 30013, Taiwan ; Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu 30013, Taiwan.
authors.forename: Hung-Bin
authors.initials: HB
authors.lastname: Chen
authors.affiliation: Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu 30013, Taiwan.
authors.forename: Ming-Hung
authors.initials: MH
authors.lastname: Han
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, Section 2 Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Nan-Heng
authors.initials: NH
authors.lastname: Lu
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, Section 2 Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Jun-Ji
authors.initials: JJ
authors.lastname: Su
authors.affiliation: Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu 30013, Taiwan.
authors.forename: Chi-Shen
authors.initials: CS
authors.lastname: Shao
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, Section 2 Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Yung-Chun
authors.initials: YC
authors.lastname: Wu
keywords: Gate-all-around (GAA); Junctionless; Nanowire; Quantum confinement effect; Thin-film transistor (TFTs)