title: Gate-induced carrier delocalization in quantum dot field effect transistors.
abstract: We study gate-controlled, low-temperature resistance and magnetotransport in indium-doped CdSe quantum dot field effect transistors. We show that using the gate to accumulate electrons in the quantum dot channel increases the "localization product" (localization length times dielectric constant) describing transport at the Fermi level, as expected for Fermi level changes near a mobility edge. Our measurements suggest that the localization length increases to significantly greater than the quantum dot diameter.
authors.affiliation: Department of Physics and Astronomy, ‡Department of Electrical and Systems Engineering, §Department of Materials Science and Engineering, and ∥Department of Chemistry, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States.
authors.forename: Michael E
authors.initials: ME
authors.lastname: Turk
authors.forename: Ji-Hyuk
authors.initials: JH
authors.lastname: Choi
authors.forename: Soong Ju
authors.initials: SJ
authors.lastname: Oh
authors.forename: Aaron T
authors.initials: AT
authors.lastname: Fafarman
authors.forename: Benjamin T
authors.initials: BT
authors.lastname: Diroll
authors.forename: Christopher B
authors.initials: CB
authors.lastname: Murray
authors.forename: Cherie R
authors.initials: CR
authors.lastname: Kagan
authors.forename: James M
authors.initials: JM
authors.lastname: Kikkawa
keywords: Quantum dots; cadmium selenide; delocalization; field-effect transistor; magnetoresistance; mobility edge