title: Temperature dependence of dielectric and electromechanical properties of (K,Na)(Nb,Ta)O3single crystal and corresponding domain structure evolution.
abstract: Domain structures and their evolution with temperature in the [001]Coriented (K,Na)(Nb,Ta)O3(KNNT) single crystal have been studied before and after poling by polarizing light microscopy. The results indicate that the KNNT crystal is difficult to be completely poled by the room temperature poling process. The domain structure is rather stable in the orthorhombic phase, but exhibits substantial changes near the phase transition temperaturesTO-TandTC. Narrower stripe domains are formed during both the orthorhombic-tetragonal and tetragonal-cubic phase transition processes, no intermediate phases were found during the phase transitions. The temperature dependence of the dielectric and piezoelectric properties were measured, and the influence of domain structures on the dielectric and electromechanical properties were quantified.
authors.forename: Limei
authors.initials: L
authors.lastname: Zheng
authors.affiliation: Condensed Matter Science and Technology Institute, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: Junjun
authors.initials: J
authors.lastname: Wang
authors.affiliation: Condensed Matter Science and Technology Institute, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: Xiaoqing
authors.initials: X
authors.lastname: Huo
authors.affiliation: Department of Chemistry, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: Rui
authors.initials: R
authors.lastname: Wang
authors.affiliation: Condensed Matter Science and Technology Institute, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: Shijing
authors.initials: S
authors.lastname: Sang
authors.affiliation: Department of Instrument Science and Engineering, Shanghai Jiao Tong University , Shanghai 200240, China.
authors.forename: Shiyang
authors.initials: S
authors.lastname: Li
authors.affiliation: College of Electronics and Information, Hangzhou Dianzi University , Hangzhou 310018, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Zheng
authors.forename: Wenwu
authors.initials: W
authors.lastname: Cao