title: Fringe structures and tunable bandgap width of 2D boron nitride nanosheets.
abstract: We report studies of the surface fringe structures and tunable bandgap width of atomic-thin boron nitride nanosheets (BNNSs). BNNSs are synthesized by using digitally controlled pulse deposition techniques. The nanoscale morphologies of BNNSs are characterized by using scanning electron microscope (SEM), and transmission electron microscopy (TEM). In general, the BNNSs appear microscopically flat in the case of low temperature synthesis, whereas at high temperature conditions, it yields various curved structures. Experimental data reveal the evolutions of fringe structures. Functionalization of the BNNSs is completed with hydrogen plasma beam source in order to efficiently control bandgap width. The characterizations are based on Raman scattering spectroscopy, X-ray diffraction (XRD), and FTIR transmittance spectra. Red shifts of spectral lines are clearly visible after the functionalization, indicating the bandgap width of the BNNSs has been changed. However, simple treatments with hydrogen gas do not affect the bandgap width of the BNNSs.
authors.affiliation: Institute of Functional Nanomaterials and Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, PR/USA 00936-8377.
authors.forename: Peter
authors.initials: P
authors.lastname: Feng
authors.affiliation: Institute of Functional Nanomaterials and Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, PR/USA 00936-8377.
authors.forename: Muhammad
authors.initials: M
authors.lastname: Sajjad
authors.affiliation: Institute of Functional Nanomaterials and Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, PR/USA 00936-8377.
authors.forename: Eric Yiming
authors.initials: EY
authors.lastname: Li
authors.affiliation: Globalfoundrie, 400 Stone Break Road extension, Malta, NY 12020, USA.
authors.forename: Hongxin
authors.initials: H
authors.lastname: Zhang
authors.affiliation: Chongqing Institute of Green and Intelligent Technology, CAS, Chongqing 400714, China.
authors.forename: Jin
authors.initials: J
authors.lastname: Chu
authors.affiliation: King Abdullah Institute for Nanotechnology and Department of Chemistry, KSU, Riyadh 11451, Saudi Arabia.
authors.forename: Ali
authors.initials: A
authors.lastname: Aldalbahi
authors.affiliation: Institute of Functional Nanomaterials and Department of Physics, College of Natural Sciences, University of Puerto Rico, San Juan, PR/USA 00936-8377.
authors.forename: Gerardo
authors.initials: G
authors.lastname: Morell
keywords: boron nitride sheets; fringe patterns; functionalization; tunable bandgap width