title: Tuning interlayer exchange coupling of co-doped TiO2/VO2 multilayers via metal-insulator transition.
abstract: Reversibly switching interlayer exchange coupling (IEC) of magnetic semiconductor multilayers between ferromagnetic (FM) and antiferromagnetic (AFM) modes is a difficult but key issue for fabricating semiconductor giant magnetoresistance devices. Here, we show that such tunable IEC is achievable around room temperature in Co-doped TiO2/VO2 diluted magnetic semiconductor multilayers. On the basis of first-principles calculations of electronic structure and fermiology, it is clarified that, associated with the metal-insulator transition (MIT) of nanosized VO2 spacers, exotic short-range magnetic orders are developed in the multilayers so that the IEC can be tuned reversibly from FM mode to AFM mode by varying temperature crossing the MIT (∼340  K).
authors.affiliation: Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China.
authors.forename: Z
authors.initials: Z
authors.lastname: Tang
authors.affiliation: Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China.
authors.forename: F
authors.initials: F
authors.lastname: Sun
authors.affiliation: Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China.
authors.forename: B
authors.initials: B
authors.lastname: Han
authors.affiliation: Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China.
authors.forename: K
authors.initials: K
authors.lastname: Yu
authors.affiliation: Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China.
authors.forename: Z Q
authors.initials: ZQ
authors.lastname: Zhu
authors.affiliation: Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China.
authors.forename: J H
authors.initials: JH
authors.lastname: Chu