title: Magnetic-field-induced delocalized to localized transformation in GaAs:N.
abstract: The use of a high magnetic field (57 T) to study the formation and evolution of nitrogen (N) cluster and supercluster states in GaAs:N is demonstrated. A magnetic field is used to lift the conduction band edge and expose resonant N cluster states so that they can be directly experimentally investigated. The reduction of the exciton Bohr radius also results in the fragmentation of N supercluster states, enabling a magnetic field induced delocalized to localized transition. The application of very high magnetic fields thus presents a powerful way to probe percolation phenomena in semiconductors with bound and resonant isoelectronic cluster states.
authors.affiliation: National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
authors.forename: K
authors.initials: K
authors.lastname: Alberi
authors.affiliation: National High Magnetic Field Laboratory, Los Alamos, New Mexico 87545, USA.
authors.forename: S A
authors.initials: SA
authors.lastname: Crooker
authors.affiliation: National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
authors.forename: B
authors.initials: B
authors.lastname: Fluegel
authors.affiliation: National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
authors.forename: D A
authors.initials: DA
authors.lastname: Beaton
authors.affiliation: National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
authors.forename: A J
authors.initials: AJ
authors.lastname: Ptak
authors.affiliation: National Renewable Energy Laboratory, Golden, Colorado 80401, USA.
authors.forename: A
authors.initials: A
authors.lastname: Mascarenhas