title: Robust formation of Skyrmions and topological Hall effect anomaly in epitaxial thin films of MnSi.
abstract: Magnetotransport properties have been investigated for epitaxial thin films of B20-type MnSi grown on Si(111) substrates. Lorentz transmission electron microscopy images clearly point to the robust formation of Skyrmions over a wide temperature-magnetic field region. New features distinct from those reported previously for MnSi are observed for epitaxial films: a shorter (nearly half) period of the spin helix and Skyrmions, and a topological Hall effect anomaly consisting in ∼2.2 times enhancement of the amplitude and in the opposite sign with respect to bulk samples.
authors.affiliation: Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan and State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: Yufan
authors.initials: Y
authors.lastname: Li
authors.affiliation: Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan.
authors.forename: N
authors.initials: N
authors.lastname: Kanazawa
authors.affiliation: Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG), RIKEN Advanced Science Institute, Wako 351-0198, Japan.
authors.forename: X Z
authors.initials: XZ
authors.lastname: Yu
authors.affiliation: Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan.
authors.forename: A
authors.initials: A
authors.lastname: Tsukazaki
authors.affiliation: Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan and Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG), RIKEN Advanced Science Institute, Wako 351-0198, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Kawasaki
authors.affiliation: Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Ichikawa
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
authors.forename: X F
authors.initials: XF
authors.lastname: Jin
authors.affiliation: Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan.
authors.forename: F
authors.initials: F
authors.lastname: Kagawa
authors.affiliation: Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan and Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG), RIKEN Advanced Science Institute, Wako 351-0198, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Tokura