title: Narrow-gap semiconductors and low-dimensional structures for optoelectronic applications.
authors.affiliation: Key Laboratory of Polar Materials and Devices of MOE, East China Normal University, Shanghai 200241, China.
authors.forename: Fangyu
authors.initials: F
authors.lastname: Yue
authors.affiliation: Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi 221005, India.
authors.forename: Satyabrata
authors.initials: S
authors.lastname: Jit
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
authors.forename: Weida
authors.initials: W
authors.lastname: Hu
mesh_terms: D012666:Semiconductors