title: High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter.
abstract: High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S,Se)4 solar cells, resulting in a substantial enhancement in open-circuit voltage. The 12.4% device is obtained with a record open-circuit voltage deficit of 593 mV.
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA.
authors.forename: Jeehwan
authors.initials: J
authors.lastname: Kim
authors.forename: Homare
authors.initials: H
authors.lastname: Hiroi
authors.forename: Teodor K
authors.initials: TK
authors.lastname: Todorov
authors.forename: Oki
authors.initials: O
authors.lastname: Gunawan
authors.forename: Masaru
authors.initials: M
authors.lastname: Kuwahara
authors.forename: Tayfun
authors.initials: T
authors.lastname: Gokmen
authors.forename: Dhruv
authors.initials: D
authors.lastname: Nair
authors.forename: Marinus
authors.initials: M
authors.lastname: Hopstaken
authors.forename: Byungha
authors.initials: B
authors.lastname: Shin
authors.forename: Yun Seog
authors.initials: YS
authors.lastname: Lee
authors.forename: Wei
authors.initials: W
authors.lastname: Wang
authors.forename: Hiroki
authors.initials: H
authors.lastname: Sugimoto
authors.forename: David B
authors.initials: DB
authors.lastname: Mitzi
keywords: CZTSSe; doping concentration; double emitter; indium sulfide; solar cells