title: Single CuO(x) nanowire memristor: forming-free resistive switching behavior.
abstract: CuOx nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature and its resistive switching has been demonstrated. The switching characteristic exhibits forming-free and low electric-field switching operation due to coexistence of significant amount of defects and Cu nanocrystals in the partially oxidized nanowires. The detailed resistive switching characteristics of CuOx nanowire systems have been investigated and possible switching mechanisms are systematically proposed based on the microstructural and chemical analysis via transmission electron microscopy.
authors.affiliation: Department of Materials Science & Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
authors.forename: Kai-De
authors.initials: KD
authors.lastname: Liang
authors.forename: Chi-Hsin
authors.initials: CH
authors.lastname: Huang
authors.forename: Chih-Chung
authors.initials: CC
authors.lastname: Lai
authors.forename: Jian-Shiou
authors.initials: JS
authors.lastname: Huang
authors.forename: Hung-Wei
authors.initials: HW
authors.lastname: Tsai
authors.forename: Yi-Chung
authors.initials: YC
authors.lastname: Wang
authors.forename: Yu-Chuan
authors.initials: YC
authors.lastname: Shih
authors.forename: Mu-Tung
authors.initials: MT
authors.lastname: Chang
authors.forename: Shen-Chuan
authors.initials: SC
authors.lastname: Lo
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh
keywords: AAO membrane; CuOx nanowire; ReRAM; forming free; memristor; resistive switching