title: Quantum-size-controlled photoelectrochemical fabrication of epitaxial InGaN quantum dots.
abstract: We demonstrate a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10 nm size regime: quantum-size-controlled photoelectrochemical (QSC-PEC) etching. We show that quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and that the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength. Low-temperature photoluminescence from ensembles of such QDs have peak wavelengths that can be tunably blue shifted by 35 nm (from 440 to 405 nm) and have line widths that narrow by 3 times (from 19 to 6 nm).
authors.affiliation: Solid-State Lighting Science Energy Frontier Research Center and ‡Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Xiaoyin
authors.initials: X
authors.lastname: Xiao
authors.forename: Arthur J
authors.initials: AJ
authors.lastname: Fischer
authors.forename: George T
authors.initials: GT
authors.lastname: Wang
authors.forename: Ping
authors.initials: P
authors.lastname: Lu
authors.forename: Daniel D
authors.initials: DD
authors.lastname: Koleske
authors.forename: Michael E
authors.initials: ME
authors.lastname: Coltrin
authors.forename: Jeremy B
authors.initials: JB
authors.lastname: Wright
authors.forename: Sheng
authors.initials: S
authors.lastname: Liu
authors.forename: Igal
authors.initials: I
authors.lastname: Brener
authors.forename: Ganapathi S
authors.initials: GS
authors.lastname: Subramania
authors.forename: Jeffrey Y
authors.initials: JY
authors.lastname: Tsao
keywords: InGaN; Quantum dots; photoelectrochemical etching; quantum-size effects