title: Photoinduced states in a Mott insulator.
abstract: We investigate the properties of the metallic state obtained by photodoping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long lifetime, so that they can dissipate their kinetic energy to a phonon bath. In the relaxed state, the scattering rate saturates at a nonzero temperature-independent value, and the momentum-resolved spectral function features broad bands which differ from the well-defined quasiparticle bands of a chemically doped system. Our results indicate that a photodoped Mott insulator behaves as a bad metal, in which strong scattering between doublons and holes inhibits Fermi-liquid behavior down to low temperature.
authors.affiliation: Max Planck Research Department for Structural Dynamics, University of Hamburg-CFEL, 22761 Hamburg, Germany.
authors.forename: Martin
authors.initials: M
authors.lastname: Eckstein
authors.affiliation: Department of Physics, University of Fribourg, 1700 Fribourg, Switzerland.
authors.forename: Philipp
authors.initials: P
authors.lastname: Werner