title: Observations of a metal-insulator transition and strong surface states in Bi2-x SbxSe3 thin films.
abstract: High-quality thin films of the topological insulator Bi2-xSbxSe3 are grown by molecular beam epitaxy. A metal-insulator transition along with strong surface states - revealed by Shubnikov-de Haas oscillations - is observed as the Sb concentration is increased. This system represents a widely tunable platform for achieving high surface conduction, suppressing the bulk influence, and manipulating the band structure of topological insulators.
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, P. R. China.
authors.forename: Cheng
authors.initials: C
authors.lastname: Zhang
authors.forename: Xiang
authors.initials: X
authors.lastname: Yuan
authors.forename: Kai
authors.initials: K
authors.lastname: Wang
authors.forename: Zhi-Gang
authors.initials: ZG
authors.lastname: Chen
authors.forename: Baobao
authors.initials: B
authors.lastname: Cao
authors.forename: Weiyi
authors.initials: W
authors.lastname: Wang
authors.forename: Yanwen
authors.initials: Y
authors.lastname: Liu
authors.forename: Jin
authors.initials: J
authors.lastname: Zou
authors.forename: Faxian
authors.initials: F
authors.lastname: Xiu
keywords: metal-insulator transition; quantum oscillations; surface states; topological insulator