title: Scanning probe microscopy investigations of the electrical properties of chemical vapor deposited graphene grown on a 6H-SiC substrate.
abstract: Sublimated graphene grown on SiC is an attractive material for scientific investigations. Nevertheless the self limiting process on the Si face and its sensitivity to the surface quality of the SiC substrates may be unfavourable for later microelectronic processes. On the other hand, chemical vapor deposited (CVD) graphene does not posses such disadvantages, so further experimental investigation is needed. In this paper CVD grown graphene on 6H-SiC (0001) substrate was investigated using scanning probe microscopy (SPM). Electrical properties of graphene were characterized with the use of: scanning tunnelling microscopy, conductive atomic force microscopy (C-AFM) with locally performed C-AFM current-voltage measurements and Kelvin probe force microscopy (KPFM). Based on the contact potential difference data from the KPFM measurements, the work function of graphene was estimated. We observed conductance variations not only on structural edges, existing surface corrugations or accidental bilayers, but also on a flat graphene surface.
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland. Electronic address: krzysztof.gajewski@pwr.edu.pl.
authors.forename: Krzysztof
authors.initials: K
authors.lastname: Gajewski
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors.forename: Daniel
authors.initials: D
authors.lastname: Kopiec
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors.forename: Magdalena
authors.initials: M
authors.lastname: Moczała
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors.forename: Adam
authors.initials: A
authors.lastname: Piotrowicz
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors.forename: Michał
authors.initials: M
authors.lastname: Zielony
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors.forename: Grzegorz
authors.initials: G
authors.lastname: Wielgoszewski
authors.affiliation: Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, ul. Z. Janiszewskiego 11/17, PL-50372 Wrocław, Poland.
authors.forename: Teodor
authors.initials: T
authors.lastname: Gotszalk
authors.affiliation: Institute of Electronic Materials Technology, ul. Wolczynska 133, PL-01919 Warsaw, Poland.
authors.forename: Włodek
authors.initials: W
authors.lastname: Strupiński
keywords: C-AFM; Graphene; KPFM; STM; SiC