title: Charge-trap flash-memory oxide transistors enabled by copper-zirconia composites.
abstract: A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu(2+) to Cu(1+), Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).
authors.affiliation: Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA.
authors.forename: Kang-Jun
authors.initials: KJ
authors.lastname: Baeg
authors.forename: Myung-Gil
authors.initials: MG
authors.lastname: Kim
authors.forename: Charles K
authors.initials: CK
authors.lastname: Song
authors.forename: Xinge
authors.initials: X
authors.lastname: Yu
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Tobin J
authors.initials: TJ
authors.lastname: Marks
keywords: amorphous oxides; data storage; dielectrics; self-assembly; semiconductors; thin films