title: Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.
abstract: Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc-G-tailored h-BN thin film was systematically analyzed. This approach provides a novel method for preparing high-quality two-dimensional materials on a large surface.
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 440-746 (Republic of Korea).
authors.forename: Kang Hyuck
authors.initials: KH
authors.lastname: Lee
authors.forename: Hyeon-Jin
authors.initials: HJ
authors.lastname: Shin
authors.forename: Brijesh
authors.initials: B
authors.lastname: Kumar
authors.forename: Han Sol
authors.initials: HS
authors.lastname: Kim
authors.forename: Jinyeong
authors.initials: J
authors.lastname: Lee
authors.forename: Ravi
authors.initials: R
authors.lastname: Bhatia
authors.forename: Sang-Hyeob
authors.initials: SH
authors.lastname: Kim
authors.forename: In-Yeal
authors.initials: IY
authors.lastname: Lee
authors.forename: Hyo Sug
authors.initials: HS
authors.lastname: Lee
authors.forename: Gil-Ho
authors.initials: GH
authors.lastname: Kim
authors.forename: Ji-Beom
authors.initials: JB
authors.lastname: Yoo
authors.forename: Jae-Young
authors.initials: JY
authors.lastname: Choi
authors.forename: Sang-Woo
authors.initials: SW
authors.lastname: Kim
keywords: boron nitride; chemical vapor deposition; electron microscopy; graphene; nanostructures