title: Flexible crossbar-structured resistive memory arrays on plastic substrates via inorganic-based laser lift-off.
abstract: Crossbar-structured memory comprising 32 × 32 arrays with one selector-one resistor (1S-1R) components are initially fabricated on a rigid substrate. They are transferred without mechanical damage via an inorganic-based laser lift-off (ILLO) process as a result of laser-material interaction. Addressing tests of the transferred memory arrays are successfully performed to verify mitigation of cross-talk on a plastic substrate.
authors.affiliation: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea.
authors.forename: Seungjun
authors.initials: S
authors.lastname: Kim
authors.forename: Jung Hwan
authors.initials: JH
authors.lastname: Son
authors.forename: Seung Hyun
authors.initials: SH
authors.lastname: Lee
authors.forename: Byoung Kuk
authors.initials: BK
authors.lastname: You
authors.forename: Kwi-Il
authors.initials: KI
authors.lastname: Park
authors.forename: Hwan Keon
authors.initials: HK
authors.lastname: Lee
authors.forename: Myunghwan
authors.initials: M
authors.lastname: Byun
authors.forename: Keon Jae
authors.initials: KJ
authors.lastname: Lee
mesh_terms: D003198:Computer Simulation; D017097:Electric Impedance; D055615:Electrical Equipment and Supplies; D004867:Equipment Design; D005898:Glass; D007834:Lasers; D016014:Linear Models; D008422:Materials Testing; D008855:Microscopy, Electron, Scanning; D046529:Microscopy, Electron, Transmission; D009532:Nickel / Q000737:chemistry; D017711:Nonlinear Dynamics; D010969:Plastics / Q000737:chemistry; D018583:Pliability; D013696:Temperature; D014025:Titanium / Q000737:chemistry
chemical_list: D010969:Plastics; C009495:titanium dioxide; D009532:Nickel; C028007:nickel monoxide; D014025:Titanium
keywords: RRAM; flexible electronics; flexible memory; laser lift-off