title: High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.
abstract: In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.
authors.affiliation: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan.
authors.forename: Ya-Ju
authors.initials: YJ
authors.lastname: Lee
authors.affiliation: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan.
authors.forename: Yung-Chi
authors.initials: YC
authors.lastname: Yao
authors.affiliation: Institute of Electronics Engineering, National Taiwan University, 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan.
authors.forename: Chun-Ying
authors.initials: CY
authors.lastname: Huang
authors.affiliation: Institute of Optoelectronic Sciences, National Taiwan Ocean University, 2, Pei-Ning Road, Keelung 202, Taiwan.
authors.forename: Tai-Yuan
authors.initials: TY
authors.lastname: Lin
authors.affiliation: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan.
authors.forename: Li-Lien
authors.initials: LL
authors.lastname: Cheng
authors.affiliation: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan.
authors.forename: Ching-Yun
authors.initials: CY
authors.lastname: Liu
authors.affiliation: Solid-State Lighting Systems Department, Green Energy and Environment Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan.
authors.forename: Mei-Tan
authors.initials: MT
authors.lastname: Wang
authors.affiliation: Solid-State Lighting Systems Department, Green Energy and Environment Research Laboratories, Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan.
authors.forename: Jung-Min
authors.initials: JM
authors.lastname: Hwang
keywords: 2-DEG; AlGaN/GaN HEMT; Breakdown voltage