title: Direct light pattern integration of low-temperature solution-processed all-oxide flexible electronics.
abstract: The rise of solution-processed electronics, together with their processing methods and materials, provides unique opportunities to achieve low-cost and low-temperature roll-to-roll printing of non-Si-based devices. Here, we demonstrate a wafer-scale direct light-patterned, fully transparent, all-solution-processed, and layer-by-layer-integrated electronic device. The deep ultraviolet irradiation of specially designed metal oxide gel films can generate fine-patterned shapes of ∼3 μm, which easily manifest their intrinsic properties at low-temperature annealing. This direct light patterning can be easily applied to the 4 in. wafer scale and diverse pattern shapes and provides feasibility for integrated circuit applications through the penetration of the deep ultraviolet range on the quartz mask. With this approach, we successfully fabricate all-oxide-based high-performance transparent thin-film transistors on flexible polymer substrates.
authors.affiliation: Department of Materials Science and Engineering and ‡California NanoSystems Institute, University of California , Los Angeles, California 90095, United States.
authors.forename: You Seung
authors.initials: YS
authors.lastname: Rim
authors.forename: Huajun
authors.initials: H
authors.lastname: Chen
authors.forename: Yongsheng
authors.initials: Y
authors.lastname: Liu
authors.forename: Sang-Hoon
authors.initials: SH
authors.lastname: Bae
authors.forename: Hyun Jae
authors.initials: HJ
authors.lastname: Kim
authors.forename: Yang
authors.initials: Y
authors.lastname: Yang
keywords: metal oxide semiconductor; patterning process; solution process; thin-film transistor; transparent electronics