title: Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene.
abstract: We present terahertz (THz) detectors based on top-gated graphene field effect transistors (GFETs) with integrated split bow-tie antennas. The GFETs were fabricated using graphene grown by chemical vapor deposition (CVD). The THz detectors are capable of room-temperature rectification of a 0.6 THz signal and achieve a maximum optical responsivity better than 14 V/W and minimum optical noise-equivalent power (NEP) of 515 pW/Hz(0.5). Our results are a significant improvement over previous work on graphene direct detectors and are comparable to other established direct detector technologies. This is the first time room-temperature direct detection has been demonstrated using CVD graphene, which introduces the potential for scalable, wafer-level production of graphene detectors.
authors.affiliation: Department of Microtechnology and Nanoscience, Chalmers University of Technology , SE-412 96 Gothenburg, Sweden.
authors.forename: Audrey
authors.initials: A
authors.lastname: Zak
authors.forename: Michael A
authors.initials: MA
authors.lastname: Andersson
authors.forename: Maris
authors.initials: M
authors.lastname: Bauer
authors.forename: Jonas
authors.initials: J
authors.lastname: Matukas
authors.forename: Alvydas
authors.initials: A
authors.lastname: Lisauskas
authors.forename: Hartmut G
authors.initials: HG
authors.lastname: Roskos
authors.forename: Jan
authors.initials: J
authors.lastname: Stake
keywords: CVD graphene; Graphene field effect transistors; antenna-integrated detectors; direct terahertz detection; distributed resistive self-mixing