title: Topologically robust transport of photons in a synthetic gauge field.
abstract: Electronic transport is localized in low-dimensional disordered media. The addition of gauge fields to disordered media leads to fundamental changes in the transport properties. We implement a synthetic gauge field for photons using silicon-on-insulator technology. By determining the distribution of transport properties, we confirm that waves are localized in the bulk and localization is suppressed in edge states. Our system provides a new platform for investigating the transport properties of photons in the presence of synthetic gauge fields.
authors.affiliation: Joint Quantum Institute, NIST/University of Maryland, College Park, Maryland 20742, USA and Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742, USA.
authors.forename: S
authors.initials: S
authors.lastname: Mittal
authors.affiliation: Joint Quantum Institute, NIST/University of Maryland, College Park, Maryland 20742, USA.
authors.forename: J
authors.initials: J
authors.lastname: Fan
authors.affiliation: Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, Postbus 9504, 2300 RA Leiden, The Netherlands.
authors.forename: S
authors.initials: S
authors.lastname: Faez
authors.affiliation: Joint Quantum Institute, NIST/University of Maryland, College Park, Maryland 20742, USA.
authors.forename: A
authors.initials: A
authors.lastname: Migdall
authors.affiliation: Joint Quantum Institute, NIST/University of Maryland, College Park, Maryland 20742, USA.
authors.forename: J M
authors.initials: JM
authors.lastname: Taylor
authors.affiliation: Joint Quantum Institute, NIST/University of Maryland, College Park, Maryland 20742, USA and Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742, USA.
authors.forename: M
authors.initials: M
authors.lastname: Hafezi