title: Improved Thin-Film Transistor Performance Through a Melt of Poly(para-phenyleneethynylene).
abstract: The performance of polymer field-effect transistors (PFETs) based on short rigid rod semiconducting poly(2,5-didodecyloxy-p-phenyleneethynylene) (D-OPPE) is highlighted. The controlled heating and cooling of thin films of D-OPPE allows for a recrystallization from the melt, boosting the performance of D-OPPE-based transistors. The improved film properties induced by controlled annealing lead to a hole field-effect mobility around 0.014 cm2V-1s-1, an on/off ratio of 106, a sub-threshold swing of 3 V dec-1and a threshold voltage of -35 V, employing a poly(methyl methacrylate) (PMMA) gate dielectric. Thus, PFETs out of D-OPPE compete now with spin-coated, polycrystalline poly(3-hexylthiophene)-based PFETs.
authors.affiliation: Organisch-Chemisches Institut, Ruprecht-Karls-Universität, Heidelberg Im Neuenheimer Feld 270, 69120, Heidelberg, Germany.
authors.forename: Stefanie
authors.initials: S
authors.lastname: Schmid
authors.forename: Anne K
authors.initials: AK
authors.lastname: Kast
authors.forename: Rasmus R
authors.initials: RR
authors.lastname: Schröder
authors.forename: Uwe H F
authors.initials: UH
authors.lastname: Bunz
authors.forename: Christian
authors.initials: C
authors.lastname: Melzer
keywords: alkyne; conjugated polymer; hole mobility; poly(para-phenyleneethynylene)s; thin film transistor