title: Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.
abstract: Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realization of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack, but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.
authors.affiliation: School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK.
authors.forename: A
authors.initials: A
authors.lastname: Mishchenko
authors.affiliation: Centre for Mesoscience &Nanotechnology, University of Manchester, Manchester M13 9PL, UK.
authors.forename: J S
authors.initials: JS
authors.lastname: Tu
authors.affiliation: Centre for Mesoscience &Nanotechnology, University of Manchester, Manchester M13 9PL, UK.
authors.forename: Y
authors.initials: Y
authors.lastname: Cao
authors.affiliation: Centre for Mesoscience &Nanotechnology, University of Manchester, Manchester M13 9PL, UK.
authors.forename: R V
authors.initials: RV
authors.lastname: Gorbachev
authors.affiliation: Physics Department, Lancaster University, Lancaster University LA1 4YB, UK.
authors.forename: J R
authors.initials: JR
authors.lastname: Wallbank
authors.affiliation: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
authors.forename: M T
authors.initials: MT
authors.lastname: Greenaway
authors.affiliation: School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK.
authors.forename: V E
authors.initials: VE
authors.lastname: Morozov
authors.affiliation: Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka 142432, Russia.
authors.forename: S V
authors.initials: SV
authors.lastname: Morozov
authors.affiliation: School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK.
authors.forename: M J
authors.initials: MJ
authors.lastname: Zhu
authors.affiliation: School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK.
authors.forename: S L
authors.initials: SL
authors.lastname: Wong
authors.affiliation: School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK.
authors.forename: F
authors.identifier: 0000000326380315
authors.initials: F
authors.lastname: Withers
authors.affiliation: School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK.
authors.forename: C R
authors.initials: CR
authors.lastname: Woods
authors.affiliation: 1] Centre for Mesoscience &Nanotechnology, University of Manchester, Manchester M13 9PL, UK [2] Department of Chemistry, Seoul National University, Seoul 151-747, Korea.
authors.forename: Y-J
authors.initials: YJ
authors.lastname: Kim
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Taniguchi
authors.affiliation: 1] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK [2] Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka 142432, Russia.
authors.forename: E E
authors.initials: EE
authors.lastname: Vdovin
authors.affiliation: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
authors.forename: O
authors.initials: O
authors.lastname: Makarovsky
authors.affiliation: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
authors.forename: T M
authors.initials: TM
authors.lastname: Fromhold
authors.affiliation: Physics Department, Lancaster University, Lancaster University LA1 4YB, UK.
authors.forename: V I
authors.initials: VI
authors.lastname: Fal'ko
authors.affiliation: 1] School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK [2] Centre for Mesoscience &Nanotechnology, University of Manchester, Manchester M13 9PL, UK.
authors.forename: A K
authors.initials: AK
authors.lastname: Geim
authors.affiliation: 1] School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK [2] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
authors.forename: L
authors.initials: L
authors.lastname: Eaves
authors.affiliation: School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK.
authors.forename: K S
authors.initials: KS
authors.lastname: Novoselov