title: Theoretical study of piezo-phototronic nano-LEDs.
abstract: Two-dimensional finite-element simulation of the piezo-phototronic effect in p-n-junction-based devices is carried out for the first time. A charge channel can be induced at the p-n junction interface when strain is applied, given the n-side is a piezoelectric semiconductor and the p-type side is non-piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light-emission efficiency in piezo-phototronic light-emitting devices.
authors.affiliation: School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332-0245, USA.
authors.forename: Ying
authors.initials: Y
authors.lastname: Liu
authors.forename: Simiao
authors.initials: S
authors.lastname: Niu
authors.forename: Qing
authors.initials: Q
authors.lastname: Yang
authors.forename: Benjamin D B
authors.initials: BD
authors.lastname: Klein
authors.forename: Yu Sheng
authors.initials: YS
authors.lastname: Zhou
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
keywords: depletion charge channels; finite-element method; piezo-phototronics