title: An epitaxial ferroelectric tunnel junction on silicon.
abstract: Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform.
authors.affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore; Beijing National Center for Electron Microscopy, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Advanced Materials (MOE), Tsinghua University, Beijing, 100084, People's Republic of China.
authors.forename: Zhipeng
authors.initials: Z
authors.lastname: Li
authors.forename: Xiao
authors.initials: X
authors.lastname: Guo
authors.forename: Hui-Bin
authors.initials: HB
authors.lastname: Lu
authors.forename: Zaoli
authors.initials: Z
authors.lastname: Zhang
authors.forename: Dongsheng
authors.initials: D
authors.lastname: Song
authors.forename: Shaobo
authors.initials: S
authors.lastname: Cheng
authors.forename: Michel
authors.initials: M
authors.lastname: Bosman
authors.forename: Jing
authors.initials: J
authors.lastname: Zhu
authors.forename: Zhili
authors.initials: Z
authors.lastname: Dong
authors.forename: Weiguang
authors.initials: W
authors.lastname: Zhu
mesh_terms: D017609:Barium Compounds / Q000737:chemistry*; D017610:Calcium Compounds / Q000737:chemistry*; D017348:Microscopy, Electron, Scanning Transmission; D010087:Oxides / Q000737:chemistry*; D012825:Silicon / Q000737:chemistry*; D013057:Spectrum Analysis; D014025:Titanium / Q000737:chemistry*
chemical_list: D017609:Barium Compounds; D017610:Calcium Compounds; D010087:Oxides; C024547:barium titanate(IV); C059910:perovskite; D014025:Titanium; D012825:Silicon
keywords: epitaxial growth; ferroelectric tunnel junction; non-volatile memory; pulsed laser deposition; tunneling electroresistance