title: Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.
abstract: Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low-threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we use the distinctive, high-quality (Q ∼ 5,500) modes of the cavities, and the change in the highest-intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems but also shed insight into the more fundamental issues of light-matter coupling in such systems.
authors.affiliation: School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138;
authors.forename: Alexander
authors.initials: A
authors.lastname: Woolf
authors.affiliation: Department of Material Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom; and.
authors.forename: Tim
authors.initials: T
authors.lastname: Puchtler
authors.affiliation: School of Physics and Advanced Materials, University of Technology, Sydney, NSW 2007, Australia.
authors.forename: Igor
authors.initials: I
authors.lastname: Aharonovich
authors.affiliation: Department of Material Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom; and.
authors.forename: Tongtong
authors.initials: T
authors.lastname: Zhu
authors.affiliation: School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138;
authors.forename: Nan
authors.initials: N
authors.lastname: Niu
authors.affiliation: School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138;
authors.forename: Danqing
authors.initials: D
authors.lastname: Wang
authors.affiliation: Department of Material Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom; and.
authors.forename: Rachel
authors.initials: R
authors.lastname: Oliver
authors.affiliation: School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138; ehu@seas.harvard.edu.
authors.forename: Evelyn L
authors.initials: EL
authors.lastname: Hu
keywords: III-nitride lasers; microdisk lasing; nanophotonic devices; quantum dot lasers