title: Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.
abstract: Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm(2) at the reverse bias of -1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface.
authors.affiliation: 1] School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China [2].
authors.forename: Kexiong
authors.initials: K
authors.lastname: Zhang
authors.affiliation: 1] School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China [2].
authors.forename: Hongwei
authors.initials: H
authors.lastname: Liang
authors.affiliation: School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Liu
authors.affiliation: School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China.
authors.forename: Rensheng
authors.initials: R
authors.lastname: Shen
authors.affiliation: Jiangsu Xinguanglian Technology Co., Ltd., Wuxi 214192, China.
authors.forename: Wenping
authors.initials: W
authors.lastname: Guo
authors.affiliation: School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China.
authors.forename: Dongsheng
authors.initials: D
authors.lastname: Wang
authors.affiliation: School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China.
authors.forename: Xiaochuan
authors.initials: X
authors.lastname: Xia
authors.affiliation: School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China.
authors.forename: Pengcheng
authors.initials: P
authors.lastname: Tao
authors.affiliation: School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China.
authors.forename: Chao
authors.initials: C
authors.lastname: Yang
authors.affiliation: School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China.
authors.forename: Yingmin
authors.initials: Y
authors.lastname: Luo
authors.affiliation: 1] School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian 116024, China [2] State Key Laboratory on Integrated Optoelectronics, School of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
authors.forename: Guotong
authors.initials: G
authors.lastname: Du