title: Tunable multilevel storage of complementary resistive switching on single-step formation of ZnO/ZnWO(x) bilayer structure via interfacial engineering.
abstract: Tunable multilevel storage of complementary resistive switching (CRS) on single-step formation of ZnO/ZnWOx bilayer structure via interfacial engineering was demonstrated for the first time. In addition, the performance of the ZnO/ZnWOx-based CRS device with the voltage- and current-sweep modes was demonstrated and investigated in detail. The resistance switching behaviors of the ZnO/ZnWOx bilayer ReRAM with adjustable RESET-stop voltages was explained using an electrochemical redox reaction model whose electron-hopping activation energies of 28, 40, and 133 meV can be obtained from Arrhenius equation at RESET-stop voltages of 1.0, 1.3, and 1.5 V, respectively. In the case of the voltage-sweep operation on the ZnO-based CRS device, the maximum array numbers (N) of 9, 15, and 31 at RESET-stop voltages of 1.4, 1.5, and 1.6 V were estimated, while the maximum array numbers increase into 47, 63, and 105 at RESET-stop voltages of 2.0, 2.2, and 2.4 V, operated by the current-sweep mode, respectively. In addition, the endurance tests show a very stable multilevel operation at each RESET-stop voltage under the current-sweep mode.
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
authors.forename: Shih-Ming
authors.initials: SM
authors.lastname: Lin
authors.forename: Jiun-Yi
authors.initials: JY
authors.lastname: Tseng
authors.forename: Teng-Yu
authors.initials: TY
authors.lastname: Su
authors.forename: Yu-Chuan
authors.initials: YC
authors.lastname: Shih
authors.forename: Jian-Shiou
authors.initials: JS
authors.lastname: Huang
authors.forename: Chi-Hsin
authors.initials: CH
authors.lastname: Huang
authors.forename: Su-Jien
authors.initials: SJ
authors.lastname: Lin
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh
keywords: ZnO; complementary resistive switching; current-sweep; interfacial engineering; multilevel storage