title: Defects in GaSe grown by Bridgman method.
abstract: Optical quality GaSe crystals have been grown by vertical Bridgman method. The structural properties and micromorphology of a cleaved GaSe(001) surface have been evaluated by RHEED, SEM and AFM. The cleaved GaSe(001) is atomically flat with as low roughness as ∼0.06 nm excepting local hillock type defects. The hillock-type formations are round-shaped with a bottom diameter of ∼200 nm and a height of ∼20-35 nm. The drastic depletion of the hillock material by gallium has been indicated by EDX measurements.
authors.affiliation: Sobolev Institute of Geology and Mineralogy, SB RAS, Novosibirsk, Russia; Novosibirsk State University, Novosibirsk, Russia; Siberian Physical-Technical Institute of Tomsk State University, Tomsk, Russia.
authors.forename: K A
authors.initials: KA
authors.lastname: Kokh
authors.forename: V V
authors.initials: VV
authors.lastname: Atuchin
authors.forename: T A
authors.initials: TA
authors.lastname: Gavrilova
authors.forename: A
authors.initials: A
authors.lastname: Kozhukhov
authors.forename: E A
authors.initials: EA
authors.lastname: Maximovskiy
authors.forename: L D
authors.initials: LD
authors.lastname: Pokrovsky
authors.forename: A R
authors.initials: AR
authors.lastname: Tsygankova
authors.forename: A I
authors.initials: AI
authors.lastname: Saprykin
keywords: AFM; GaSe; RHEED; SEM; crystal growth