title: Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers.
abstract: Hexagonal boron nitride (h-BN) atomic layers are synthesized on polycrystalline copper foils via a novel chemical vapor deposition (CVD) process that maintains a vapor-phase copper overpressure during growth. Compared to h-BN films grown without a copper overpressure, this process results in a >10× reduction of 3-dimensional BN fullerene-like surface features, a reduction of carbon and oxygen contamination of 65% and 62%, respectively, an increase in h-BN grain size of >2×, and an 89% increase in electrical breakdown strength.
authors.affiliation: Department of Materials Science and Engineering, ‡Electro-Optics Center, §Center for 2-Dimensional and Layered Materials, ∥Materials Research Institute, and ⊥Department of Chemical Engineering, The Pennsylvania State University , University Park, Pennsylvania 16802, United States.
authors.forename: Michael S
authors.initials: MS
authors.lastname: Bresnehan
authors.forename: Ganesh R
authors.initials: GR
authors.lastname: Bhimanapati
authors.forename: Ke
authors.initials: K
authors.lastname: Wang
authors.forename: David W
authors.initials: DW
authors.lastname: Snyder
authors.forename: Joshua A
authors.initials: JA
authors.lastname: Robinson
keywords: CVD; dielectrics; graphene; h-BN; hexagonal boron nitride