title: Quantum-memory effects in the emission of quantum-dot microcavities.
abstract: The experimentally measured input-output characteristics of optically pumped semiconductor microcavities exhibits unexpected oscillations modifying the fundamentally linear slope in the excitation power regime below lasing. A systematic microscopic analysis reproduces these oscillations, identifying them as a genuine quantum-memory effect, i.e., a photon-density correlation accumulated during the excitation. With the use of projected quantum measurements, it is shown that the input-output oscillations can be controlled and enhanced by an order of magnitude when the quantum fluctuations of the pump are adjusted.
authors.affiliation: Department of Physics, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany.
authors.forename: C
authors.initials: C
authors.lastname: Berger
authors.affiliation: Department of Physics, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany.
authors.forename: U
authors.initials: U
authors.lastname: Huttner
authors.affiliation: Department of Physics, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany.
authors.forename: M
authors.initials: M
authors.lastname: Mootz
authors.affiliation: Department of Physics, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany.
authors.forename: M
authors.initials: M
authors.lastname: Kira
authors.affiliation: Department of Physics, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany.
authors.forename: S W
authors.initials: SW
authors.lastname: Koch
authors.affiliation: Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany.
authors.forename: J-S
authors.initials: JS
authors.lastname: Tempel
authors.affiliation: Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany.
authors.forename: M
authors.initials: M
authors.lastname: Aßmann
authors.affiliation: Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany and Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Saint Petersburg, 194021, Russia.
authors.forename: M
authors.initials: M
authors.lastname: Bayer
authors.affiliation: Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Saint Petersburg, 194021, Russia and Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA.
authors.forename: A M
authors.initials: AM
authors.lastname: Mintairov
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA.
authors.forename: J L
authors.initials: JL
authors.lastname: Merz