title: Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects.
abstract: A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range.
authors.affiliation: Department of Display and Semiconductor Physics, Korea University, 2511 Sejongro, Sejong, 339-700, Korea; Department of Applied Physics, Korea University, 2511 Sejongro, Sejong, 339-700, Korea.
authors.forename: Sanghun
authors.initials: S
authors.lastname: Jeon
authors.forename: Ihun
authors.initials: I
authors.lastname: Song
authors.forename: Sungsik
authors.initials: S
authors.lastname: Lee
authors.forename: Byungki
authors.initials: B
authors.lastname: Ryu
authors.forename: Seung-Eon
authors.initials: SE
authors.lastname: Ahn
authors.forename: Eunha
authors.initials: E
authors.lastname: Lee
authors.forename: Young
authors.initials: Y
authors.lastname: Kim
authors.forename: Arokia
authors.initials: A
authors.lastname: Nathan
authors.forename: John
authors.initials: J
authors.lastname: Robertson
authors.forename: U-In
authors.initials: UI
authors.lastname: Chung
keywords: nanocrystalline oxide semiconductors; photoconductivity; thin-film transistors; transparent photosensors