title: Transparent, high-performance thin-film transistors with an InGaZnO/aligned-SnO2 -nanowire composite and their application in photodetectors.
abstract: A high mobility of 109.0 cm(2) V(-1) s(-1) is obtained by thin-film transistors (TFTs) comprising a composite made by aligning SnO2 nanowires (NWs) in amorphous InGaZnO (a-IGZO) thin films. This composite TFT reaches an on-current density of 61.4 μA μm(-1) with a 10 μm channel length. Its performance surpasses that of single-crystalline InGaZnO and is comparable with that of polycrystalline silicon.
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Xingqiang
authors.initials: X
authors.lastname: Liu
authors.forename: Xi
authors.initials: X
authors.lastname: Liu
authors.forename: Jingli
authors.initials: J
authors.lastname: Wang
authors.forename: Chongnan
authors.initials: C
authors.lastname: Liao
authors.forename: Xiangheng
authors.initials: X
authors.lastname: Xiao
authors.forename: Shishang
authors.initials: S
authors.lastname: Guo
authors.forename: Changzhong
authors.initials: C
authors.lastname: Jiang
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Fan
authors.forename: Ti
authors.initials: T
authors.lastname: Wang
authors.forename: Xiaoshuang
authors.initials: X
authors.lastname: Chen
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
authors.forename: Weida
authors.initials: W
authors.lastname: Hu
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
keywords: InGaZnO; composite materials; nanowires; phototransistors; thin films; thin-film transistors