title: From ambi- to unipolar behavior in discotic dye field-effect transistors.
abstract: Ambipolar, solution-processed thin-film transistors based on a discotic dye turn into unipolar behavior after thermal annealing. No evidence for temperature-induced change in injection barrier or interface trapping can be found to explain this phenomenon. Instead, a variation in morphology is considered as the cause for the observed transition from ambipolar to unipolar charge transport.
authors.affiliation: Max Planck Institute for Polymer Research Ackermannweg 10, 55128 Mainz (Germany).
authors.forename: Hoi Nok
authors.initials: HN
authors.lastname: Tsao
authors.forename: Wojciech
authors.initials: W
authors.lastname: Pisula
authors.forename: Zhihong
authors.initials: Z
authors.lastname: Liu
authors.forename: Wojciech
authors.initials: W
authors.lastname: Osikowicz
authors.forename: William R
authors.initials: WR
authors.lastname: Salaneck
authors.forename: Klaus
authors.initials: K
authors.lastname: Müllen
keywords: ambipolar transport; dyes; field-effect transistors; thin films