title: Scanning tunneling microscopy studies of topological insulators.
abstract: Scanning tunneling microscopy (STM), with surface sensitivity, is an ideal tool to probe the intriguing properties of the surface state of topological insulators (TIs) and topological crystalline insulators (TCIs). We summarize the recent progress on those topological phases revealed by STM studies. STM observations have directly confirmed the existence of the topological surface states and clearly revealed their novel properties. We also discuss STM work on magnetic doped TIs, topological superconductors and crystalline symmetry-protected surface states in TCIs. The studies have greatly promoted our understanding of the exotic properties of the new topological phases, as well as put forward new challenges. STM will continue to play an important role in this rapidly growing field from the point view of both fundamental physics and applications.
authors.affiliation: State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China.
authors.forename: Kun
authors.initials: K
authors.lastname: Zhao
authors.forename: Yan-Feng
authors.initials: YF
authors.lastname: Lv
authors.forename: Shuai-Hua
authors.initials: SH
authors.lastname: Ji
authors.forename: Xucun
authors.initials: X
authors.lastname: Ma
authors.forename: Xi
authors.initials: X
authors.lastname: Chen
authors.forename: Qi-Kun
authors.initials: QK
authors.lastname: Xue