title: Quantitative impedance characterization of sub-10 nm scale capacitors and tunnel junctions with an interferometric scanning microwave microscope.
abstract: We present a method to characterize sub-10 nm capacitors and tunnel junctions by interferometric scanning microwave microscopy (iSMM) at 7.8 GHz. At such device scaling, the small water meniscus surrounding the iSMM tip should be reduced by proper tip tuning. Quantitative impedance characterization of attofarad range capacitors is achieved using an 'on-chip' calibration kit facing thousands of nanodevices. Nanoscale capacitors and tunnel barriers were detected through variations in the amplitude and phase of the reflected microwave signal, respectively. This study promises quantitative impedance characterization of a wide range of emerging functional nanoscale devices.
authors.affiliation: Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), CNRS UMR 8520, University of Lille, Avenue Poincaré, CS 60069, F-59652 Villeneuve d'Ascq, France.
authors.forename: Fei
authors.initials: F
authors.lastname: Wang
authors.forename: Nicolas
authors.initials: N
authors.lastname: Clément
authors.forename: Damien
authors.initials: D
authors.lastname: Ducatteau
authors.forename: David
authors.initials: D
authors.lastname: Troadec
authors.forename: Hassan
authors.initials: H
authors.lastname: Tanbakuchi
authors.forename: Bernard
authors.initials: B
authors.lastname: Legrand
authors.forename: Gilles
authors.initials: G
authors.lastname: Dambrine
authors.forename: Didier
authors.initials: D
authors.lastname: Théron