title: Enhanced resistive switching effect upon illumination in self-assembled NiWO4 nano-nests.
abstract: The resistive switching effect of devices with metal-oxide-metal structure is a fascinating candidate for next generation nonvolatile memory devices. Here, self-assembled NiWO4 nano-nests on a Ti substrate were synthesized by a hydrothermal process. Moreover, a resistive switching memory device with Ag/NiWO4/Ti structure is demonstrated. The device shows an enhanced bipolar resistive switching effect under white-light illumination. This study is useful for exploring multifunctional materials and their applications in light-controlled nonvolatile memory devices.
authors.affiliation: School of Physics Science and Technology, Southwest University, Chongqing 400715, China. pchen@swu.edu.cn.
authors.forename: Bai
authors.initials: B
authors.lastname: Sun
authors.forename: Wenxi
authors.initials: W
authors.lastname: Zhao
authors.forename: Lujun
authors.initials: L
authors.lastname: Wei
authors.forename: Hongwei
authors.initials: H
authors.lastname: Li
authors.forename: Peng
authors.initials: P
authors.lastname: Chen