title: Ytterbium-doped fiber laser passively mode locked by few-layer Molybdenum Disulfide (MoS2) saturable absorber functioned with evanescent field interaction.
abstract: By coupling few-layer Molybdenum Disulfide (MoS2) with fiber-taper evanescent light field, a new type of MoS2 based nonlinear optical modulating element had been successfully fabricated as a two-dimensional layered saturable absorber with strong light-matter interaction. This MoS2-taper-fiber device is not only capable of passively mode-locking an all-normal-dispersion ytterbium-doped fiber laser and enduring high power laser excitation (up to 1 W), but also functions as a polarization sensitive optical modulating component (that is, different polarized light can induce different nonlinear optical response). Thanks to the combined advantages from the strong nonlinear optical response in MoS2 together with the sufficiently-long-range interaction between light and MoS2, this device allows for the generation of high power stable dissipative solitons at 1042.6 nm with pulse duration of 656 ps and a repetition rate of 6.74 MHz at a pump power of 210 mW. Our work may also constitute the first example of MoS2-enabled wave-guiding photonic device, and potential y give some new insights into two-dimensional layered materials related photonics.
authors.affiliation: Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronic Science, Hunan University, Changsha 410082, China.
authors.forename: Juan
authors.initials: J
authors.lastname: Du
authors.affiliation: Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronic Science, Hunan University, Changsha 410082, China.
authors.forename: Qingkai
authors.initials: Q
authors.lastname: Wang
authors.affiliation: Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronic Science, Hunan University, Changsha 410082, China.
authors.forename: Guobao
authors.initials: G
authors.lastname: Jiang
authors.affiliation: Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
authors.forename: Changwen
authors.initials: C
authors.lastname: Xu
authors.affiliation: Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
authors.forename: Chujun
authors.initials: C
authors.lastname: Zhao
authors.affiliation: Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
authors.forename: Yuanjiang
authors.initials: Y
authors.lastname: Xiang
authors.affiliation: Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronic Science, Hunan University, Changsha 410082, China.
authors.forename: Shuangchun
authors.initials: S
authors.lastname: Wen
authors.affiliation: Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronic Science, Hunan University, Changsha 410082, China.
authors.forename: Han
authors.initials: H
authors.lastname: Zhang