title: Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector.
abstract: The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photoconductive gain (∼2.5 × 10(4)%) and reasonable response and decay times (0.7 s and 1 s, respectively). These results substantiate the potential of CdTe nanowire-based photodetectors in optoelectronic applications.
authors.affiliation: Department of IT Convergence Engineering, Pohang University of Science and Technology (POSTECH), Pohang, South Korea. ljs6951@postech.ac.kr.
authors.forename: Mehrdad
authors.initials: M
authors.lastname: Shaygan
authors.forename: Keivan
authors.initials: K
authors.lastname: Davami
authors.forename: Nazli
authors.initials: N
authors.lastname: Kheirabi
authors.forename: Changi Ki
authors.initials: CK
authors.lastname: Baek
authors.forename: Gianaurelio
authors.initials: G
authors.lastname: Cuniberti
authors.forename: M
authors.initials: M
authors.lastname: Meyyappan
authors.forename: Jeong-Soo
authors.initials: JS
authors.lastname: Lee
mesh_terms: D019187:Cadmium Compounds / Q000737:chemistry*; D004553:Electric Conductivity; D007259:Infrared Rays; D008027:Light; D053770:Nanowires / Q000737:chemistry*; D013691:Tellurium / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D019187:Cadmium Compounds; D013691:Tellurium; C028337:cadmium telluride