title: Competitive growth mechanisms of AlN on Si (111) by MOVPE.
abstract: To improve the growth rate and crystal quality of AlN, the competitive growth mechanisms of AlN under different parameters were studied. The mass transport limited mechanism was competed with the gas-phase parasitic reaction and became dominated at low reactor pressure. The mechanism of strain relaxation at the AlN/Si interface was studied by transmission electron microscopy (TEM). Improved deposition rate in the mass-transport-limit region and increased adatom mobility were realized under extremely low reactor pressure.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Yuxia
authors.initials: Y
authors.lastname: Feng
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Hongyuan
authors.initials: H
authors.lastname: Wei
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Shaoyan
authors.initials: S
authors.lastname: Yang
authors.affiliation: LatticePower (Jiangxi) Corporation, No. 699 North Aixihu Road, National High-Tech Industrial Development Zone, Nanchang, Jiangxi, People's Republic of China, 330029.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Chen
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Lianshan
authors.initials: L
authors.lastname: Wang
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Susu
authors.initials: S
authors.lastname: Kong
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Guijuan
authors.initials: G
authors.lastname: Zhao
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Xianglin
authors.initials: X
authors.lastname: Liu