title: Preferential formation of Si-O-C over Si-C linkage upon thermal grafting on hydrogen-terminated silicon (111).
abstract: In a stringent and near oxygen-free environment, Si-H surfaces were introduced to a trifluoroalkyne, an alcohol-derivatized alkyne, as well as an equal mixture of both alkynes at a temperature of 130 °C. Contact angle measurements, high-resolution X-ray photoelectron spectroscopy (XPS), and angle-resolved XPS were performed to examine the system. Si-H surfaces were found to have a strong preference towards the formation of Si-O-C rather than Si-C bonds when the alcohol and alkyne reactivities were compared.
authors.affiliation: Department of Materials Science, University of Milan-Bicocca, Via R. Cozzi 55, 20125 Milan (Italy), Fax: (+39) 02-6448-5400. yit.khung@unimib.it.
authors.forename: Yit Lung
authors.initials: YL
authors.lastname: Khung
authors.forename: Siti Hawa
authors.initials: SH
authors.lastname: Ngalim
authors.forename: Laura
authors.initials: L
authors.lastname: Meda
authors.forename: Dario
authors.initials: D
authors.lastname: Narducci
mesh_terms: D000480:Alkynes / Q000737:chemistry*; D054879:Halogenation; D006859:Hydrogen / Q000737:chemistry; D056951:Photoelectron Spectroscopy; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D013696:Temperature
chemical_list: D000480:Alkynes; D006859:Hydrogen; D012825:Silicon
keywords: alkynes; contact angle; hydrosilylation; silicon; surface chemistry