title: Doping graphene with an atomically thin two dimensional molecular layer.
abstract: Atomically thin and chemically versatile GO sheets are used as p-type dopants of CVD-graphene. This method enables the strong, stable, large-scale, low-temperature, and controllable p-doping of graphene with preserved charge mobility, intrinsic roughness, and transmittance.
authors.affiliation: Department of Chemical Engineering, Polymer Research Institute, Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea.
authors.forename: Haena
authors.initials: H
authors.lastname: Kim
authors.forename: Hyun Ho
authors.initials: HH
authors.lastname: Kim
authors.forename: Jeong In
authors.initials: JI
authors.lastname: Jang
authors.forename: Seong Kyu
authors.initials: SK
authors.lastname: Lee
authors.forename: Geon-Woong
authors.initials: GW
authors.lastname: Lee
authors.forename: Joong Tark
authors.initials: JT
authors.lastname: Han
authors.forename: Kilwon
authors.initials: K
authors.lastname: Cho
keywords: field effect transistor; graphene; graphene oxide; molecular doping; transparent conductive electrodes