title: Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.
abstract: The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Ling
authors.initials: L
authors.lastname: Sang
authors.affiliation: Key Laboratory of Semiconductor Material Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Qin Sheng
authors.initials: QS
authors.lastname: Zhu
authors.affiliation: Key Laboratory of Semiconductor Material Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Shao Yan
authors.initials: SY
authors.lastname: Yang
authors.affiliation: Key Laboratory of Semiconductor Material Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Gui Peng
authors.initials: GP
authors.lastname: Liu
authors.affiliation: Key Laboratory of Semiconductor Material Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Hui Jie
authors.initials: HJ
authors.lastname: Li
authors.affiliation: Key Laboratory of Semiconductor Material Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Hong Yuan
authors.initials: HY
authors.lastname: Wei
authors.affiliation: Key Laboratory of Semiconductor Material Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Chun Mei
authors.initials: CM
authors.lastname: Jiao
authors.affiliation: Key Laboratory of Semiconductor Material Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Shu Man
authors.initials: SM
authors.lastname: Liu
authors.affiliation: Key Laboratory of Semiconductor Material Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Zhan Guo
authors.initials: ZG
authors.lastname: Wang
authors.affiliation: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China.
authors.forename: Xiao Wei
authors.initials: XW
authors.lastname: Zhou
authors.affiliation: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Mao
authors.affiliation: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Hao
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Shen
keywords: GaN/AlN; Heterostructure; Non-polar; X-ray photoemission spectroscopy