title: Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well.
abstract: We observed an anomalous linear photogalvanic effect (ALPGE) in undoped InGaAs/AlGaAs multiple quantum well and studied its wavelength dependence in details. This effect is believed to originate from the optical momentum alignment effect and the inhomogeneity of light intensity. We find that the spot location with the maximum ALPGE current is wavelength independent. And the normalized ALPGE current decreasing at smaller wavelengths is attributed to the sharp decrease of the momentum and energy relaxation time. The electrical measurement of the spectra dependence of ALPGE is highly sensitive proving to be an effective method for detecting the momentum anisotropy of photoinduced carriers and band coupling.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China.
authors.forename: Laipan
authors.initials: L
authors.lastname: Zhu
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China.
authors.forename: Hansong
authors.initials: H
authors.lastname: Gao
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China.
authors.forename: Xudong
authors.initials: X
authors.lastname: Qin
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Li
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Wu
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China.
authors.forename: Yonghai
authors.initials: Y
authors.lastname: Chen
keywords: Anomalous linear photogalvanic effect; Momentum relaxation time; Optical momentum alignment effect; Spectra