title: The origin of excellent gate-bias stress stability in organic field-effect transistors employing fluorinated-polymer gate dielectrics.
abstract: Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed.
authors.affiliation: POSTECH Organic Electronics Laboratory, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Nam-Gu, Pohang, Gyungbuk, 790-784, Republic of Korea.
authors.forename: Jiye
authors.initials: J
authors.lastname: Kim
authors.forename: Jaeyoung
authors.initials: J
authors.lastname: Jang
authors.forename: Kyunghun
authors.initials: K
authors.lastname: Kim
authors.forename: Haekyoung
authors.initials: H
authors.lastname: Kim
authors.forename: Se Hyun
authors.initials: SH
authors.lastname: Kim
authors.forename: Chan Eon
authors.initials: CE
authors.lastname: Park
mesh_terms: D025802:Electric Capacitance; D004867:Equipment Design; D054879:Halogenation; D057927:Hydrophobic and Hydrophilic Interactions; D007700:Kinetics; D009584:Nitrogen / Q000737:chemistry; D011108:Polymers / Q000737:chemistry*; D011137:Polystyrenes / Q000737:chemistry; D012666:Semiconductors; D012822:Silicon Dioxide / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: D011108:Polymers; D011137:Polystyrenes; D012822:Silicon Dioxide; D009584:Nitrogen
keywords: fluorinated polymers; gate-bias stabilities; organic field-effect transistors