title: Nonvolatile resistance switching on two-dimensional electron gas.
abstract: Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>10(6)) and a low leakage current at the OFF state (∼10(-13) A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.
authors.affiliation: Electronic Materials Research Center, Korea Institute of Science and Technology , Seoul 136-791, Republic of Korea.
authors.forename: Jin Gwan
authors.initials: JG
authors.lastname: Joung
authors.forename: Shin-Ik
authors.initials: SI
authors.lastname: Kim
authors.forename: Seon Young
authors.initials: SY
authors.lastname: Moon
authors.forename: Dai-Hong
authors.initials: DH
authors.lastname: Kim
authors.forename: Hyo Jin
authors.initials: HJ
authors.lastname: Gwon
authors.forename: Seong-Hyeon
authors.initials: SH
authors.lastname: Hong
authors.forename: Hye Jung
authors.initials: HJ
authors.lastname: Chang
authors.forename: Jin-Ha
authors.initials: JH
authors.lastname: Hwang
authors.forename: Beom Jin
authors.initials: BJ
authors.lastname: Kwon
authors.forename: Seong Keun
authors.initials: SK
authors.lastname: Kim
authors.forename: Ji-Won
authors.initials: JW
authors.lastname: Choi
authors.forename: Seok-Jin
authors.initials: SJ
authors.lastname: Yoon
authors.forename: Chong-Yun
authors.initials: CY
authors.lastname: Kang
authors.forename: Kwang Soo
authors.initials: KS
authors.lastname: Yoo
authors.forename: Jin-Sang
authors.initials: JS
authors.lastname: Kim
authors.forename: Seung-Hyub
authors.initials: SH
authors.lastname: Baek
keywords: complex oxide; heterointerface; nonvolatile memory; resistance switching; two-dimensional electron gas