title: Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition.
abstract: Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the semiconductor but also the other elements constituting the LED when applied to the final device. In this paper, we present the fabrication of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction. We characterized their diode behavior from room temperature to 673 K and demonstrated their ability as current rectifiers, thus proving the potential of these fully porous p-n junctions for diode and LEDs applications. The electrical and luminescence characterization confirm that high electronic quality porous structures can be obtained by this method, and we believe this investigation can be extended to other III-N materials for the development of white light LEDs, or to reduce reflection losses and narrowing the output light cone for improved LED external quantum efficiencies.
authors.affiliation: Física i Cristal·lografia de Materials i Nanomaterials (FiCMA-FiCNA) and EMaS, Universitat Rovira i Virgili (URV) , Marcel·lı́ Domingo s/n, E-43007 Tarragona, Spain.
authors.forename: Oleksandr V
authors.initials: OV
authors.lastname: Bilousov
authors.forename: Joan J
authors.initials: JJ
authors.lastname: Carvajal
authors.forename: Hugh
authors.initials: H
authors.lastname: Geaney
authors.forename: Vitaly Z
authors.initials: VZ
authors.lastname: Zubialevich
authors.forename: Peter J
authors.initials: PJ
authors.lastname: Parbrook
authors.forename: Oscar
authors.initials: O
authors.lastname: Martínez
authors.forename: Juan
authors.initials: J
authors.lastname: Jiménez
authors.forename: Francesc
authors.initials: F
authors.lastname: Díaz
authors.forename: Magdalena
authors.initials: M
authors.lastname: Aguiló
authors.forename: Colm
authors.initials: C
authors.lastname: O'Dwyer
keywords: chemical vapor deposition; epitaxial growth; light emitting diodes; porous GaN; porous p−n junction diode