title: Flutter-driven triboelectrification for harvesting wind energy.
abstract: Technologies to harvest electrical energy from wind have vast potentials because wind is one of the cleanest and most sustainable energy sources that nature provides. Here we propose a flutter-driven triboelectric generator that uses contact electrification caused by the self-sustained oscillation of flags. We study the coupled interaction between a fluttering flexible flag and a rigid plate. In doing so, we find three distinct contact modes: single, double and chaotic. The flutter-driven triboelectric generator having small dimensions of 7.5 × 5 cm at wind speed of 15 ms(-1) exhibits high-electrical performances: an instantaneous output voltage of 200 V and a current of 60 μA with a high frequency of 158 Hz, giving an average power density of approximately 0.86 mW. The flutter-driven triboelectric generation is a promising technology to drive electric devices in the outdoor environments in a sustainable manner.
authors.affiliation: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Korea.
authors.forename: Jihyun
authors.initials: J
authors.lastname: Bae
authors.affiliation: Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul 151-744, Korea.
authors.forename: Jeongsu
authors.initials: J
authors.lastname: Lee
authors.affiliation: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Korea.
authors.forename: SeongMin
authors.initials: S
authors.lastname: Kim
authors.affiliation: Department of Chemistry, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea.
authors.forename: Jaewook
authors.initials: J
authors.lastname: Ha
authors.affiliation: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Korea.
authors.forename: Byoung-Sun
authors.initials: BS
authors.lastname: Lee
authors.affiliation: DMC R&D Center, Samsung Electronics Co. Ltd., 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-742, Korea.
authors.forename: YoungJun
authors.initials: Y
authors.lastname: Park
authors.affiliation: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Korea.
authors.forename: Chweelin
authors.initials: C
authors.lastname: Choong
authors.affiliation: Department of Chemistry, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea.
authors.forename: Jin-Baek
authors.initials: JB
authors.lastname: Kim
authors.affiliation: Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, Georgia 30332-0245, USA.
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
authors.affiliation: Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul 151-744, Korea.
authors.forename: Ho-Young
authors.initials: HY
authors.lastname: Kim
authors.affiliation: School of Polymer Science &Engineering, Chonnam National University, Gwangju 500-757, Korea.
authors.forename: Jong-Jin
authors.initials: JJ
authors.lastname: Park
authors.affiliation: Samsung Advanced Institute of Technology (SAIT), Samsung Electronics Co., 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Korea.
authors.forename: U-In
authors.initials: UI
authors.lastname: Chung