title: Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches.
abstract: Redox-based resistive memory cells exhibit changes of OFF or intermediate resistance values over time and even ON states can be completely lost in certain cases. The stability of these resistance states and the time until resistance loss strongly depends on the materials system. On the basis of electrical measurements and chemical analysis we found a viable explanation for these volatile resistance states (VRSs) in Ag-GeSx-based electrochemical metallization memory cells and identified a technological application in the field of crossbar memories. Complementary resistive switches usually suffer from the necessity of a destructive read-out procedure increasing wear and reducing read-out speed. From our analysis we deduced a solution to use the VRS as an inherent selector mechanism without the need for additional selector devices.
authors.affiliation: Institut für Werkstoffe der Elektrotechnik II (IWE II) & JARA-FIT, RWTH Aachen University, Sommerfeldstr. 24, D-52074 Aachen, Germany.
authors.forename: Jan
authors.initials: J
authors.lastname: van den Hurk
authors.forename: Eike
authors.initials: E
authors.lastname: Linn
authors.forename: Hehe
authors.initials: H
authors.lastname: Zhang
authors.forename: Rainer
authors.initials: R
authors.lastname: Waser
authors.forename: Ilia
authors.initials: I
authors.lastname: Valov