title: Spintronic functionality of BiFeO3 domain walls.
abstract: Anisotropic magnetoresistance at the BiFeO3 domain walls has been observed thanks to the realization of micro-devices that allow the direct magneto-transport characterization of the domain-walls. Anisotropic magnetoresistance of ferromagnetic metals has been a pillar in spintronic technology, and now it is evidenced at the conductive domain walls of an insulating ferroelectric material, which implies that domain walls become an electrically tunable nanospintronic object.
authors.affiliation: Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale), D-06120, Germany.
authors.forename: Ji Hye
authors.initials: JH
authors.lastname: Lee
authors.forename: Ignasi
authors.initials: I
authors.lastname: Fina
authors.forename: Xavi
authors.initials: X
authors.lastname: Marti
authors.forename: Young Heon
authors.initials: YH
authors.lastname: Kim
authors.forename: Dietrich
authors.initials: D
authors.lastname: Hesse
authors.forename: Marin
authors.initials: M
authors.lastname: Alexe
keywords: BiFeO3; anisotropic magnetoresistance; conduction mechanism; domain walls; spintronics