title: The bottom-up growth of edge specific graphene nanoribbons.
abstract: The discovery of ballistic transport in graphene grown on SiC(0001) sidewall trenches has sparked an intense effort to uncover the origin of this exceptional conductivity. How a ribbon's edge termination, width, and topography influence its transport is not yet understood. This work presents the first structural and electronic comparison of sidewall graphene grown with different edge terminations. We show that armchair and zigzag terminated ribbons, grown from SiC, have very different topographies and interact differently with the substrate, properties that are critical to device architecture in sidewall ribbon electronics.
authors.affiliation: The Georgia Institute of Technology , Atlanta, Georgia 30332-0430, United States.
authors.forename: M S
authors.initials: MS
authors.lastname: Nevius
authors.forename: F
authors.initials: F
authors.lastname: Wang
authors.forename: C
authors.initials: C
authors.lastname: Mathieu
authors.forename: N
authors.initials: N
authors.lastname: Barrett
authors.forename: A
authors.initials: A
authors.lastname: Sala
authors.forename: T O
authors.initials: TO
authors.lastname: Menteş
authors.forename: A
authors.initials: A
authors.lastname: Locatelli
authors.forename: E H
authors.initials: EH
authors.lastname: Conrad
keywords: Graphene; SiC; graphite; graphite thin film; nanoribbons; silicon carbide