title: Realization of the meminductor.
abstract: The meminductor was proposed to be a fundamental circuit memdevice parallel with the memristor, linking magnetic flux and current. However, a clear material model or experimental realization of a meminductor has been challenging. Here we demonstrate pinched hysteretic magnetic flux-current signals at room temperature based on the spin Hall magnetoresistance effect in several-nanometer-thick thin films, exhibiting the nonvolatile memorizing property and magnetic energy storage ability of the meminductor. Similar to the parameters of the capacitor, resistor, and inductor, meminductance, LM, is introduced to characterize the capability of the prepared meminductor. Our findings present an indispensable element of memdevices and open an avenue for nanoscale meminductor design and manufacture, which might contribute to low-power electronic circuits, information storage, and artificial intelligence.
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University , Beijing 100084, China.
authors.forename: Jiahao
authors.initials: J
authors.lastname: Han
authors.forename: Cheng
authors.initials: C
authors.lastname: Song
authors.forename: Shuang
authors.initials: S
authors.lastname: Gao
authors.forename: Yuyan
authors.initials: Y
authors.lastname: Wang
authors.forename: Chao
authors.initials: C
authors.lastname: Chen
authors.forename: Feng
authors.initials: F
authors.lastname: Pan
keywords: electric current; magnetic flux; meminductor; pinched hysteretic curve; the spin Hall magnetoresistance effect