title: Band-selective infrared photodetectors with complete-composition-range InAs(x)P(1-x) alloy nanowires.
abstract: Band-selective infrared photodetectors (PDs) are constructed with InAs(x)P(1-x) alloy nanowires from the complete composition range (0 ≤ x ≤ 1) achieved by a new growth route combining the vapor-liquid-solid mechanism with an additional ion-exchange process. Increasing the composition x value from 0 to 1 in the PDs allows the peak response wavelength to be gradually tuned from ca. 900 to ca. 2900 nm.
authors.affiliation: Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan, 410082, P. R. China.
authors.forename: Pinyun
authors.initials: P
authors.lastname: Ren
authors.forename: Wei
authors.initials: W
authors.lastname: Hu
authors.forename: Qinglin
authors.initials: Q
authors.lastname: Zhang
authors.forename: Xiaoli
authors.initials: X
authors.lastname: Zhu
authors.forename: Xiujuan
authors.initials: X
authors.lastname: Zhuang
authors.forename: Liang
authors.initials: L
authors.lastname: Ma
authors.forename: Xiaopeng
authors.initials: X
authors.lastname: Fan
authors.forename: Hong
authors.initials: H
authors.lastname: Zhou
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.forename: Xiangfeng
authors.initials: X
authors.lastname: Duan
authors.forename: Anlian
authors.initials: A
authors.lastname: Pan
keywords: InAsxP1-x nanowires; complete alloy composition range; infrared photodetectors; nanowires; photodetectors