title: Nanoscale carrier multiplication mapping in a Si diode.
abstract: Carrier multiplication (CM), the creation of electron-hole pairs from an excited electron, has been investigated in a silicon p-n junction by multiple probe scanning tunneling microscopy. The technique enables an unambiguous determination of the quantum yield based on the direct measurement of both electron and hole currents that are generated by hot tunneling electrons. The combined effect of impact ionization, carrier diffusion, and recombination is directly visualized from the spatial mapping of the CM efficiency. Atomically well-ordered areas of the p-n junction surface sustain the highest CM rate, demonstrating the key role of the surface in reaching high yield.
authors.affiliation: Institut d'Electronique, de Microélectronique, et de Nanotechnologies (IEMN), CNRS, UMR 8520 Département ISEN , 41 bd Vauban, 59046 Lille Cedex, France.
authors.forename: Corentin
authors.initials: C
authors.lastname: Durand
authors.forename: Pierre
authors.initials: P
authors.lastname: Capiod
authors.forename: Maxime
authors.initials: M
authors.lastname: Berthe
authors.forename: Jean Philippe
authors.initials: JP
authors.lastname: Nys
authors.forename: Christophe
authors.initials: C
authors.lastname: Krzeminski
authors.forename: Didier
authors.initials: D
authors.lastname: Stiévenard
authors.forename: Christophe
authors.initials: C
authors.lastname: Delerue
authors.forename: Bruno
authors.initials: B
authors.lastname: Grandidier
keywords: Carrier multiplication; impact ionization; multiple probe scanning tunneling microscopy; silicon