title: Upgrade of the electron beam ion trap in Shanghai.
abstract: Over the last few years the Shanghai electron beam ion trap (EBIT) has been successfully redesigned and rebuilt. The original machine, developed under collaboration with the Shanghai Institute of Applied Physics, first produced an electron beam in 2005. It could be tuned with electron energies between 1 and 130 keV and beam current up to 160 mA. After several years of operation, it was found that several modifications for improvements were necessary to reach the goals of better electron optics, higher photon detection, and ion injection efficiencies, and more economical running costs. The upgraded Shanghai-EBIT is made almost entirely from Ti instead of stainless steel and achieves a vacuum of less than 10(-10) Torr, which helps to minimize the loss of highly changed ions through charge exchange. Meanwhile, a more compact structure and efficient cryogenic system, and excellent optical alignment have been of satisfactory. The magnetic field in the central trap region can reach up till 4.8 T with a uniformity of 2.77 × 10(-4). So far the upgraded Shanghai-EBIT has been operated up to an electron energy of 151 keV and a beam current of up to 218 mA, although promotion to even higher energy is still in progress. Radiation from ions as highly charged as Xe(53+, 54+) has been produced and the characterization of current density is estimated from the measured electron beam width.
authors.affiliation: The Key Lab of Applied Ion Beam Physics, Ministry of Education, 200433 Shanghai, China.
authors.forename: D
authors.initials: D
authors.lastname: Lu
authors.affiliation: The Key Lab of Applied Ion Beam Physics, Ministry of Education, 200433 Shanghai, China.
authors.forename: Y
authors.initials: Y
authors.lastname: Yang
authors.affiliation: The Key Lab of Applied Ion Beam Physics, Ministry of Education, 200433 Shanghai, China.
authors.forename: J
authors.initials: J
authors.lastname: Xiao
authors.affiliation: The Key Lab of Applied Ion Beam Physics, Ministry of Education, 200433 Shanghai, China.
authors.forename: Y
authors.initials: Y
authors.lastname: Shen
authors.affiliation: The Key Lab of Applied Ion Beam Physics, Ministry of Education, 200433 Shanghai, China.
authors.forename: Y
authors.initials: Y
authors.lastname: Fu
authors.affiliation: The Key Lab of Applied Ion Beam Physics, Ministry of Education, 200433 Shanghai, China.
authors.forename: B
authors.initials: B
authors.lastname: Wei
authors.affiliation: The Key Lab of Applied Ion Beam Physics, Ministry of Education, 200433 Shanghai, China.
authors.forename: K
authors.initials: K
authors.lastname: Yao
authors.affiliation: The Key Lab of Applied Ion Beam Physics, Ministry of Education, 200433 Shanghai, China.
authors.forename: R
authors.initials: R
authors.lastname: Hutton
authors.affiliation: The Key Lab of Applied Ion Beam Physics, Ministry of Education, 200433 Shanghai, China.
authors.forename: Y
authors.initials: Y
authors.lastname: Zou