title: The application of the barrier-type anodic oxidation method to thickness testing of aluminum films.
abstract: The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.
authors.affiliation: Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China.
authors.forename: Jianwen
authors.initials: J
authors.lastname: Chen
authors.affiliation: Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China.
authors.forename: Manwen
authors.initials: M
authors.lastname: Yao
authors.affiliation: Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China.
authors.forename: Ruihua
authors.initials: R
authors.lastname: Xiao
authors.affiliation: Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China.
authors.forename: Pengfei
authors.initials: P
authors.lastname: Yang
authors.affiliation: Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China.
authors.forename: Baofu
authors.initials: B
authors.lastname: Hu
authors.affiliation: Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China.
authors.forename: Xi
authors.initials: X
authors.lastname: Yao