title: GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy.
abstract: GaN nanowires were coated with tungsten by means of atomic layer deposition. These structures were then adapted as probe tips for near-field scanning microwave microscopy. These probes displayed a capacitive resolution of ~0.03 fF, which surpasses that of a commercial Pt tip. Upon imaging of MoS₂ sheets with both the Pt and GaN nanowire tips, we found that the nanowire tips were comparatively immune to surface contamination and far more durable than their Pt counterparts.
authors.forename: Joel C
authors.initials: JC
authors.lastname: Weber
authors.forename: Paul T
authors.initials: PT
authors.lastname: Blanchard
authors.forename: Aric W
authors.initials: AW
authors.lastname: Sanders
authors.forename: Jonas C
authors.initials: JC
authors.lastname: Gertsch
authors.forename: Steven M
authors.initials: SM
authors.lastname: George
authors.forename: Samuel
authors.initials: S
authors.lastname: Berweger
authors.forename: Atif
authors.initials: A
authors.lastname: Imtiaz
authors.forename: Kevin J
authors.initials: KJ
authors.lastname: Coakley
authors.forename: Thomas M
authors.initials: TM
authors.lastname: Wallis
authors.forename: Kris A
authors.initials: KA
authors.lastname: Bertness
authors.forename: Pavel
authors.initials: P
authors.lastname: Kabos
authors.forename: Norman A
authors.initials: NA
authors.lastname: Sanford
authors.forename: Victor M
authors.initials: VM
authors.lastname: Bright