title: Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films.
abstract: Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/2 , Ba 3d 3/2 , Ti 2p 3/2 , Ti 2p 1/2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively.
authors.affiliation: Department of Electronic Engineering, Kwangwoon University, 20 Gwangun-Ro, Nowon-gu, Seoul 139-701, Republic of Korea.
authors.forename: Cong
authors.initials: C
authors.lastname: Wang
authors.affiliation: Department of Electronic Engineering, Kwangwoon University, 20 Gwangun-Ro, Nowon-gu, Seoul 139-701, Republic of Korea.
authors.forename: Yang
authors.initials: Y
authors.lastname: Li
authors.affiliation: Department of Electronic Engineering, Kwangwoon University, 20 Gwangun-Ro, Nowon-gu, Seoul 139-701, Republic of Korea.
authors.forename: Zhao
authors.initials: Z
authors.lastname: Yao
authors.affiliation: Department of Electronic Materials Engineering, Kwangwoon University, 20 Gwangun-Ro, Nowon-gu, Seoul 139-701, Republic of Korea.
authors.forename: Hong-Ki
authors.initials: HK
authors.lastname: Kim
authors.affiliation: Department of Electronic Materials Engineering, Kwangwoon University, 20 Gwangun-Ro, Nowon-gu, Seoul 139-701, Republic of Korea.
authors.forename: Hyung-Jun
authors.initials: HJ
authors.lastname: Kim
authors.affiliation: Department of Electronic Engineering, Kwangwoon University, 20 Gwangun-Ro, Nowon-gu, Seoul 139-701, Republic of Korea.
authors.forename: Nam-Young
authors.initials: NY
authors.lastname: Kim
keywords: Barium titanate; Inductively coupled plasma etching; Post-annealing treatment; Sulfur hexafluoride