title: Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.
abstract: Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV <10 cm s(-1)). The deduced values are close to the best reported SRV obtained by the high thermal budget process (with annealing time between 10-30 min), conventionally used for improved surface passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.
authors.affiliation: Silicon Solar Cell Group, (Network of Institutes for Solar Energy), CSIR - National Physical Laboratory, New Delhi-110012, India. vandana1@nplindia.org pksingh@nplindia.org.
authors.lastname: Vandana
authors.forename: Neha
authors.initials: N
authors.lastname: Batra
authors.forename: Jhuma
authors.initials: J
authors.lastname: Gope
authors.forename: Rajbir
authors.initials: R
authors.lastname: Singh
authors.forename: Jagannath
authors.initials: J
authors.lastname: Panigrahi
authors.forename: Sanjay
authors.initials: S
authors.lastname: Tyagi
authors.forename: P
authors.initials: P
authors.lastname: Pathi
authors.forename: S K
authors.initials: SK
authors.lastname: Srivastava
authors.forename: C M S
authors.initials: CM
authors.lastname: Rauthan
authors.forename: P K
authors.initials: PK
authors.lastname: Singh