title: In situ atom scale visualization of domain wall dynamics in VO2 insulator-metal phase transition.
abstract: A domain wall, as a device, can bring about a revolution in developing manipulation of semiconductor heterostructures devices at the atom scale. However, it is a challenge for these new devices to control domain wall motion through insulator-metal transition of correlated-electron materials. To fully understand and harness this motion, it requires visualization of domain wall dynamics in real space. Here, domain wall dynamics in VO2 insulator-metal phase transition was observed directly by in situ TEM at atom scale. Experimental results depict atom scale evolution of domain morphologies and domain wall exact positions in (202) and (040) planes referring to rutile structure at 50°C. In addition, microscopic mechanism of domain wall dynamics and accurate lattice basis vector relationship of two domains were investigated with the assistance of X-ray diffraction, ab initio calculations and image simulations. This work offers a route to atom scale tunable heterostructure device application.
authors.affiliation: 1] Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China [2].
authors.forename: Xinfeng
authors.initials: X
authors.lastname: He
authors.affiliation: 1] SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China [2].
authors.forename: Tao
authors.initials: T
authors.lastname: Xu
authors.affiliation: Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China.
authors.forename: Xiaofeng
authors.initials: X
authors.lastname: Xu
authors.affiliation: Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China.
authors.forename: Yijie
authors.initials: Y
authors.lastname: Zeng
authors.affiliation: Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Xu
authors.affiliation: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China.
authors.forename: Litao
authors.initials: L
authors.lastname: Sun
authors.affiliation: Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China.
authors.forename: Chunrui
authors.initials: C
authors.lastname: Wang
authors.affiliation: Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China.
authors.forename: Huaizhong
authors.initials: H
authors.lastname: Xing
authors.affiliation: Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China.
authors.forename: Binhe
authors.initials: B
authors.lastname: Wu
authors.affiliation: Department of Applied Physics, Donghua University, No. 2999, North Renmin Road, Songjiang District, Shanghai 201620, China.
authors.forename: Aijiang
authors.initials: A
authors.lastname: Lu
authors.affiliation: Optical Coatings and Materials Department, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, No. 500, Yutian Road, Shanghai 200083, China.
authors.forename: Dingquan
authors.initials: D
authors.lastname: Liu
authors.affiliation: National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, No. 500 Yutian Road, Shanghai 200083, China.
authors.forename: Xiaoshuang
authors.initials: X
authors.lastname: Chen
authors.affiliation: National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, No. 500 Yutian Road, Shanghai 200083, China.
authors.forename: Junhao
authors.initials: J
authors.lastname: Chu