title: Optical properties and band gap of single- and few-layer MoTe2 crystals.
abstract: Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1.10 eV. This new monolayer material extends the spectral range of atomically thin direct-gap materials from the visible to the near-infrared.
authors.affiliation: Departments of Physics and Electrical Engineering, Columbia University , 538 West 120th Street , New York, New York 10027, United States.
authors.forename: Claudia
authors.initials: C
authors.lastname: Ruppert
authors.forename: Burak
authors.initials: B
authors.lastname: Aslan
authors.forename: Tony F
authors.initials: TF
authors.lastname: Heinz
keywords: 2D materials; Layered materials; MoTe2; electronic and optical properties; transition metal dichalcogenides