title: Axial diffusion barriers in near-infrared nanopillar LEDs.
abstract: The growth of GaAs/GaAsP axial heterostructures is demonstrated and implemented as diffusion current barriers in nanopillar light-emitting diodes at near-infrared wavelengths. The nanopillar light-emitting diodes utilize an n-GaAs/i-InGaAs/p-GaAs axial heterostructure for current injection. Axial GaAsP segments are inserted into the n- and p-GaAs portions of the nanopillars surrounding the InGaAs emitter region, acting as diffusion barriers to provide enhanced carrier confinement. Detailed characterization of growth of the GaAsP inserts and electronic band-offset measurements are used to effectively implement the GaAsP inserts as diffusion barriers. The implementation of these barriers in nanopillar light-emitting diodes provides a 5-fold increase in output intensity, making this a promising approach to high-efficiency pillar-based emitters in the near-infrared wavelength range.
authors.affiliation: Department of Electrical Engineering and California NanoSystems Institute, University of California at Los Angeles , Los Angeles, California 90095, United States.
authors.forename: Adam C
authors.initials: AC
authors.lastname: Scofield
authors.forename: Andrew
authors.initials: A
authors.lastname: Lin
authors.forename: Michael
authors.initials: M
authors.lastname: Haddad
authors.forename: Diana L
authors.initials: DL
authors.lastname: Huffaker
keywords: Nanopillar; diffusion barrier; light-emitting diode