title: Confinement-modulated junctionless nanowire transistors for logic circuits.
abstract: We report the controlled formation of nanoscale constrictions in junctionless nanowire field-effect transistors that efficiently modulate the flow of the current in the nanowire. The constrictions act as potential barriers and the height of the barriers can be selectively tuned by gates, making the device concept compatible with the crossbar geometry in order to create logic circuits. The functionality of the architecture and the reliability of the fabrication process are demonstrated by designing decoder devices.
authors.affiliation: Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), CNRS, UMR 8520, Avenue Poincaré - B.P. 60069, 59652 Villeneuve d'Ascq, France. francois.vaurette@iemn.univ-lille1.fr.
authors.forename: François
authors.initials: F
authors.lastname: Vaurette
authors.forename: Renaud
authors.initials: R
authors.lastname: Leturcq
authors.forename: Sylvie
authors.initials: S
authors.lastname: Lepilliet
authors.forename: Bruno
authors.initials: B
authors.lastname: Grandidier
authors.forename: Didier
authors.initials: D
authors.lastname: Stiévenard