title: Granularity controlled nonsaturating linear magnetoresistance in topological insulator Bi2Te3 films.
abstract: We report on the magnetotransport properties of chemical vapor deposition grown films of interconnected Bi2Te3 nanoplates. Similar to many other topological insulator (TI) materials, these granular Bi2Te3 films exhibit a linear magnetoresistance (LMR) effect which has received much recent attention. Studying samples with different degree of granularity, we find a universal correlation between the magnitude of the LMR and the average mobility (⟨μ⟩) of the films over nearly 2 orders of magnitude change of ⟨μ⟩. The granularity controlled LMR effect here is attributed to the mobility fluctuation induced classical LMR according to the Parish-Littlewood theory. These findings have implications to both the fundamental understanding and magnetoresistive device applications of TI and small bandgap semiconductor materials.
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road, Shenyang 110016, People's Republic of China.
authors.forename: Z H
authors.initials: ZH
authors.lastname: Wang
authors.forename: L
authors.initials: L
authors.lastname: Yang
authors.forename: X J
authors.initials: XJ
authors.lastname: Li
authors.forename: X T
authors.initials: XT
authors.lastname: Zhao
authors.forename: H L
authors.initials: HL
authors.lastname: Wang
authors.forename: Z D
authors.initials: ZD
authors.lastname: Zhang
authors.forename: Xuan P A
authors.initials: XP
authors.lastname: Gao
keywords: Topological insulator; granularity; magnetoresistance; nanoplate; thin film