title: Near-infrared optical absorption enhanced in black silicon via Ag nanoparticle-induced localized surface plasmon.
abstract: Due to the localized surface plasmon (LSP) effect induced by Ag nanoparticles inside black silicon, the optical absorption of black silicon is enhanced dramatically in near-infrared range (1,100 to 2,500 nm). The black silicon with Ag nanoparticles shows much higher absorption than black silicon fabricated by chemical etching or reactive ion etching over ultraviolet to near-infrared (UV-VIS-NIR, 250 to 2,500 nm). The maximum absorption even increased up to 93.6% in the NIR range (820 to 2,500 nm). The high absorption in NIR range makes LSP-enhanced black silicon a potential material used for NIR-sensitive optoelectronic device.
  78.67.Bf; 78.30.Fs; 78.40.-q; 42.70.Gi.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
authors.forename: Peng
authors.initials: P
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
authors.forename: Shibin
authors.initials: S
authors.lastname: Li
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
authors.forename: Chunhua
authors.initials: C
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
authors.forename: Xiongbang
authors.initials: X
authors.lastname: Wei
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
authors.forename: Zhiming
authors.initials: Z
authors.lastname: Wu
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
authors.forename: Yadong
authors.initials: Y
authors.lastname: Jiang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China ; Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506, USA.
authors.forename: Zhi
authors.initials: Z
authors.lastname: Chen
keywords: Absorption; Ag nanoparticles; Black silicon; Chemical etching; LSP