title: Selective remanent ambipolar charge transport in polymeric field-effect transistors for high-performance logic circuits fabricated in ambient.
abstract: Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations.
authors.affiliation: Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, SE-601 74, Norrköping, Sweden.
authors.forename: Simone
authors.initials: S
authors.lastname: Fabiano
authors.forename: Hakan
authors.initials: H
authors.lastname: Usta
authors.forename: Robert
authors.initials: R
authors.lastname: Forchheimer
authors.forename: Xavier
authors.initials: X
authors.lastname: Crispin
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Magnus
authors.initials: M
authors.lastname: Berggren
keywords: CMOS-like inverters; P(VDF-TrFE); ambipolar polymers; ferroelectrics; memories