title: Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.
abstract: Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Rui
authors.initials: R
authors.lastname: Cheng
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA.
authors.forename: Shan
authors.initials: S
authors.lastname: Jiang
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Yu
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Nathan
authors.initials: N
authors.lastname: Weiss
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Hung-Chieh
authors.initials: HC
authors.lastname: Cheng
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA.
authors.forename: Hao
authors.initials: H
authors.lastname: Wu
authors.affiliation: 1] Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA [2] California Nanosystems Institute, University of California, Los Angeles, California 90095, USA.
authors.forename: Yu
authors.initials: Y
authors.lastname: Huang
authors.affiliation: 1] Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA [2] California Nanosystems Institute, University of California, Los Angeles, California 90095, USA.
authors.forename: Xiangfeng
authors.initials: X
authors.lastname: Duan
mesh_terms: D004220:Disulfides / Q000737:chemistry*; D055615:Electrical Equipment and Supplies; D004581:Electronics; D004867:Equipment Design; D008982:Molybdenum / Q000737:chemistry*; D049329:Nanostructures / Q000737:chemistry*; D036103:Nanotechnology; D018583:Pliability; D014173:Transistors, Electronic
chemical_list: D004220:Disulfides; D008982:Molybdenum; C082964:molybdenum disulfide