title: Nanoscale conducting oxide PlasMOStor.
abstract: We experimentally demonstrate an ultracompact PlasMOStor, a plasmon slot waveguide field-effect modulator based on a transparent conducting oxide active region. By electrically modulating the conducting oxide material deposited into the gaps of highly confined plasmonic slot waveguides, we demonstrate field-effect dynamics giving rise to modulation with high dynamic range (2.71 dB/μm) and low waveguide loss (∼0.45 dB/μm). The large modulation strength is due to the large change in complex dielectric function when the signal wavelength approaches the surface plasmon resonance in the voltage-tuned conducting oxide accumulation layer. The results provide insight about the design of ultracompact, nanoscale modulators for future integrated nanophotonic circuits.
authors.affiliation: Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology , Pasadena, California 91125, United States.
authors.forename: Ho W
authors.initials: HW
authors.lastname: Lee
authors.forename: Georgia
authors.initials: G
authors.lastname: Papadakis
authors.forename: Stanley P
authors.initials: SP
authors.lastname: Burgos
authors.forename: Krishnan
authors.initials: K
authors.lastname: Chander
authors.forename: Arian
authors.initials: A
authors.lastname: Kriesch
authors.forename: Ragip
authors.initials: R
authors.lastname: Pala
authors.forename: Ulf
authors.initials: U
authors.lastname: Peschel
authors.forename: Harry A
authors.initials: HA
authors.lastname: Atwater
keywords: Plasmonics; active plasmonics; epsilon near-zero material; field-effect modulation; modulator; nanocircuits; plasmonic slot waveguide; transparent conducting oxide