title: Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices.
abstract: This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiO x /Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these state modulations occur due to bias-induced reduction of the TiO x active layer via the displacement of ionic species.
authors.affiliation: Nano Research Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK.
authors.forename: Iulia
authors.initials: I
authors.lastname: Salaoru
authors.affiliation: Nano Research Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK ; College of Electronic Science and Engineering, National University of Defence Technology, Changsha 410073, China.
authors.forename: Qingjiang
authors.initials: Q
authors.lastname: Li
authors.affiliation: Nano Research Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK.
authors.forename: Ali
authors.initials: A
authors.lastname: Khiat
authors.affiliation: Nano Research Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK.
authors.forename: Themistoklis
authors.initials: T
authors.lastname: Prodromakis
keywords: Memcapacitor; Memristor; Nanoscale; ReRAM; TiO2