title: Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode.
abstract: Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a cross-bar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of -1.6 V, retention time of >1 × 10(5) s with a memory margin of 9.2 × 10(5), program/erase endurance cycles of >10(2) with a memory margin of 8.4 × 10(5), and bending-fatigue-free cycles of ∼1 × 10(3) with a memory margin (I(on)/I(off)) of 3.3 × 10(5).
authors.affiliation: Department of Electronic Engineering, Hanyang University, Seoul, 133-791, Korea. Advanced Semiconductor Materials and Devices Development Center, Hanyang University, Seoul 133-791, Korea.
authors.forename: Hyun-Min
authors.initials: HM
authors.lastname: Seung
authors.forename: Kyoung-Cheol
authors.initials: KC
authors.lastname: Kwon
authors.forename: Gon-Sub
authors.initials: GS
authors.lastname: Lee
authors.forename: Jea-Gun
authors.initials: JG
authors.lastname: Park