title: Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory.
abstract: We reported that the resistive switching of Ag/In-Ga-Zn-O/Pt cells exhibited self-rectifying performance at low-resistance state (LRS). The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K. The Schottky barrier originated from the interface between Ag electrode and In-Ga-Zn-O films, identified by replacing Ag electrode with Cu and Ti metals. The reverse current at 1.2 V of LRS is strongly suppressed and more than three orders of magnitude lower than the forward current. The Schottky barrier height was calculated as approximately 0.32 eV, and the electron injection process and resistive switching mechanism were discussed.
authors.affiliation: College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China ; The Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China.
authors.forename: Xiaobing
authors.initials: X
authors.lastname: Yan
authors.affiliation: College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China.
authors.forename: Hua
authors.initials: H
authors.lastname: Hao
authors.affiliation: College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China.
authors.forename: Yingfang
authors.initials: Y
authors.lastname: Chen
authors.affiliation: College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China.
authors.forename: Shoushan
authors.initials: S
authors.lastname: Shi
authors.affiliation: College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China.
authors.forename: Erpeng
authors.initials: E
authors.lastname: Zhang
authors.affiliation: College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China.
authors.forename: Jianzhong
authors.initials: J
authors.lastname: Lou
authors.affiliation: Department of Physics, Hebei University, Baoding 071002, People's Republic of China.
authors.forename: Baoting
authors.initials: B
authors.lastname: Liu
keywords: Resistive switching; Schottky barrier; Self-rectifying