title: Growth and Raman spectra of single-crystal trilayer graphene with different stacking orientations.
abstract: Understanding the growth mechanism of graphene layers in chemical vapor deposition (CVD) and their corresponding Raman properties is technologically relevant and of importance for the application of graphene in electronic and optoelectronic devices. Here, we report CVD growth of single-crystal trilayer graphene (TLG) grains on Cu and show that lattice defects at the center of each grain persist throughout the growth, indicating that the adlayers share the same nucleation site with the upper layers and these central defects could also act as a carbon pathway for the growth of a new layer. Statistics shows that ABA, 30-30, 30-AB, and AB-30 make up the major stacking orientations in the CVD-grown TLG, with distinctive Raman 2D characteristics. Surprisingly, a high level of lattice defects results whenever a layer with a twist angle of θ = 30° is found in the multiple stacks of graphene layers.
authors.affiliation: Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China.
authors.forename: Haiming
authors.initials: H
authors.lastname: Zhao
authors.forename: Yung-Chang
authors.initials: YC
authors.lastname: Lin
authors.forename: Chao-Hui
authors.initials: CH
authors.lastname: Yeh
authors.forename: He
authors.initials: H
authors.lastname: Tian
authors.forename: Yu-Chen
authors.initials: YC
authors.lastname: Chen
authors.forename: Dan
authors.initials: D
authors.lastname: Xie
authors.forename: Yi
authors.initials: Y
authors.lastname: Yang
authors.forename: Kazu
authors.initials: K
authors.lastname: Suenaga
authors.forename: Tian-Ling
authors.initials: TL
authors.lastname: Ren
authors.forename: Po-Wen
authors.initials: PW
authors.lastname: Chiu
keywords: ALD; Raman; TEM; graphene; stacking; trilayer