title: The effect of ALD-Zno layers on the formation of CH₃NH₃PbI₃ with different perovskite precursors and sintering temperatures.
abstract: ZnO films deposited by atomic layer deposition at 70 °C were used to fabricate perovskite solar cells, and a conversion efficiency of 13.1% was obtained. On the ZnO layer, CH3NH3PbI3 was formed at room temperature using CH3NH3I and PbCl2 precursors, which is in contrast to the reported results.
authors.affiliation: Center for Low-Dimensional Materials, Micro-Nano Devices and Systems, Changzhou University, Changzhou, Jiangsu 213164, China. nyyuan@cczu.edu.cn.
authors.forename: Xu
authors.initials: X
authors.lastname: Dong
authors.forename: Hongwei
authors.initials: H
authors.lastname: Hu
authors.forename: Bencai
authors.initials: B
authors.lastname: Lin
authors.forename: Jianning
authors.initials: J
authors.lastname: Ding
authors.forename: Ningyi
authors.initials: N
authors.lastname: Yuan