title: Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature.
abstract: We present a new fabrication method of graphene spin-valve devices that yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si(++)/SiO2. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi-, and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10 μm combined with carrier mobilities exceeding 20,000 cm(2)/(V s).
authors.affiliation: 2nd Institute of Physics and JARA-FIT, RWTH Aachen University , 52074 Aachen, Germany.
authors.forename: Marc
authors.initials: M
authors.lastname: Drögeler
authors.forename: Frank
authors.initials: F
authors.lastname: Volmer
authors.forename: Maik
authors.initials: M
authors.lastname: Wolter
authors.forename: Bernat
authors.initials: B
authors.lastname: Terrés
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.forename: Gernot
authors.initials: G
authors.lastname: Güntherodt
authors.forename: Christoph
authors.initials: C
authors.lastname: Stampfer
authors.forename: Bernd
authors.initials: B
authors.lastname: Beschoten
keywords: Graphene; Hanle precession; boron nitride; spin transport