title: Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.
abstract: Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic factors such as charged impurities, structural defects and traps, leading to much lower mobility than the intrinsic limit. Here we develop a facile low-temperature thiol chemistry route to repair the sulfur vacancies and improve the interface, resulting in significant reduction of the charged impurities and traps. High mobility >80 cm(2) V(-1) s(-1) is achieved in backgated monolayer molybdenum disulfide field-effect transistors at room temperature. Furthermore, we develop a theoretical model to quantitatively extract the key microscopic quantities that control the transistor performances, including the density of charged impurities, short-range defects and traps. Our combined experimental and theoretical study provides a clear path towards intrinsic charge transport in two-dimensional dichalcogenides for future high-performance device applications.
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Zhihao
authors.initials: Z
authors.lastname: Yu
authors.affiliation: School of Physics, Nanjing University, Nanjing 210093, China.
authors.forename: Yiming
authors.initials: Y
authors.lastname: Pan
authors.affiliation: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China.
authors.forename: Yuting
authors.initials: Y
authors.lastname: Shen
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, China.
authors.forename: Zilu
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Institute of High Performance Computing, 1 Fusionopolis Way, Singapore 138632, Singapore.
authors.forename: Zhun-Yong
authors.initials: ZY
authors.lastname: Ong
authors.affiliation: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Xu
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Run
authors.initials: R
authors.lastname: Xin
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Lijia
authors.initials: L
authors.lastname: Pan
authors.affiliation: School of Physics, Nanjing University, Nanjing 210093, China.
authors.forename: Baigeng
authors.initials: B
authors.lastname: Wang
authors.affiliation: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China.
authors.forename: Litao
authors.initials: L
authors.lastname: Sun
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, China.
authors.forename: Jinlan
authors.initials: J
authors.lastname: Wang
authors.affiliation: Institute of High Performance Computing, 1 Fusionopolis Way, Singapore 138632, Singapore.
authors.forename: Gang
authors.initials: G
authors.lastname: Zhang
authors.affiliation: Institute of High Performance Computing, 1 Fusionopolis Way, Singapore 138632, Singapore.
authors.forename: Yong Wei
authors.initials: YW
authors.lastname: Zhang
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Xinran
authors.initials: X
authors.lastname: Wang