title: Detailed model for the In0.18Ga0.82N/GaN self-assembled quantum dot active material for λ = 420 nm emission.
abstract: We present a comprehensive model for In(0.18)Ga(0.82)N/GaN self-assembled quantum dot (QD) active material. The strain distribution in the QD structure is studied using linear elastic theory with the application of the shrink-fit boundary condition at the material interface. Subsequent calculations also predict the strain-induced quantum-confined Stark effect (QCSE). Under carrier injection, the overall effect of band bending and charge screening is studied by solving the Schrödinger and Poisson equations self-consistently. The optical gain spectrum of the InGaN/GaN QD active material is calculated based on the electronic states solved from the Schrödinger-Poisson equation, and both the calculated material gain peak and emission wavelength agree well with the measured experimental data.
authors.forename: Guan-Lin
authors.initials: GL
authors.lastname: Su
authors.forename: Thomas
authors.initials: T
authors.lastname: Frost
authors.forename: Pallab
authors.initials: P
authors.lastname: Bhattacharya
authors.forename: John M
authors.initials: JM
authors.lastname: Dallesasse
authors.forename: Shun Lien
authors.initials: SL
authors.lastname: Chuang
mesh_terms: D003198:Computer Simulation; D004867:Equipment Design; D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D045663:Quantum Dots; D012666:Semiconductors
chemical_list: D007204:Indium; D005708:Gallium