title: Room-temperature ferroelectricity in hexagonal TbMnO3 thin films.
abstract: Piezoresponse force microscopy imaging in conjunction with first-principles calculations provide strong evidence for room-temperature ferroelectricity in epitaxially stabilized hexagonal TbMnO3 thin films, which in the bulk form are with orthorhombic structure. The obtained results demonstrate that new phases and functional properties of complex oxide materials can be strain-engineered using epitaxial growth.
authors.affiliation: Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA.
authors.forename: Dong Jik
authors.initials: DJ
authors.lastname: Kim
authors.forename: Tula R
authors.initials: TR
authors.lastname: Paudel
authors.forename: Haidong
authors.initials: H
authors.lastname: Lu
authors.forename: John D
authors.initials: JD
authors.lastname: Burton
authors.forename: John G
authors.initials: JG
authors.lastname: Connell
authors.forename: Evgeny Y
authors.initials: EY
authors.lastname: Tsymbal
authors.forename: S S
authors.initials: SS
authors.lastname: Ambrose Seo
authors.forename: Alexei
authors.initials: A
authors.lastname: Gruverman
keywords: ferroelectricity; hexagonal rare-earth manganites; resistive switching; strain-engineering