title: Single CdTe microwire photodetectors grown by close-spaced sublimation method.
abstract: We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated. CdTe microwire FETs exhibited p-type behaviors with field-effect mobilities up to 1.1 × 10(-3) cm2 V(-1) s(-1). Optoelectronic properties of our CdTe microwire FETs were studied under dark and UV-illumination conditions, where photoresponse was highly dependent on the back-gate bias conditions. Our CdTe microwire FET-based photodetectors are promising for high-performance micro-optoelectronic applications.
authors.forename: Gwangseok
authors.initials: G
authors.lastname: Yang
authors.forename: Byung-Jae
authors.initials: BJ
authors.lastname: Kim
authors.forename: Donghwan
authors.initials: D
authors.lastname: Kim
authors.forename: Jihyun
authors.initials: J
authors.lastname: Kim