title: Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layer.
abstract: We reported that the peak efficiency together with the efficiency droop in InGaN-based light emitting diodes could be effectively modified through a simple and low-cost etch-regrown process in n-GaN layer. The etched n-GaN template contained pyramid arrays with inclined side planes. The following lateral overgrowth process from the etched n-GaN template substantially reduced the edge dislocation density and residential compressive strain in epilayers. The efficiency droop of LED samples thus could be modified due to the reduced polarization field, resulting from the strain relaxation in epilayers. What is more, the peak efficiency and reverse current leakage were also modified due to the reduction of dislocations.
authors.forename: Binglei
authors.initials: B
authors.lastname: Fu
authors.forename: Junjie
authors.initials: J
authors.lastname: Kang
authors.forename: Tongbo
authors.initials: T
authors.lastname: Wei
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Liu
authors.forename: Zhe
authors.initials: Z
authors.lastname: Liu
authors.forename: Naixin
authors.initials: N
authors.lastname: Liu
authors.forename: Zhuo
authors.initials: Z
authors.lastname: Xiong
authors.forename: Zhi
authors.initials: Z
authors.lastname: Li
authors.forename: Xuecheng
authors.initials: X
authors.lastname: Wei
authors.forename: Hongxi
authors.initials: H
authors.lastname: Lu
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Yi
authors.forename: Jinmin
authors.initials: J
authors.lastname: Li
authors.forename: Junxi
authors.initials: J
authors.lastname: Wang