title: High Curie temperature BiInO3-PbTiO3films.
abstract: High Curie temperaturepiezoelectricthin films ofxBiInO3-(1-x)PbTiO3(x= 0.10, 0.15, 0.20, and 0.25) were prepared by pulsed laser deposition. It was found that the tetragonality of films decreased with increasing BI content. The dielectric constant and transverse piezoelectric coefficient (e31,f) exhibit the highest values of 665 and -13.6 C/m2atx= 0.20. Rayleigh analyses were performed to identify the extrinsic contributions to dielectric nonlinearity with differentx. The composition withx= 0.20 also exhibits the largest extrinsic contributions to dielectric nonlinearity. The Curie temperature (TC) is increased with increasingxcontent from 558 to 633 °C;TCatx= 0.20 is about 584 °C.
authors.affiliation: Materials Research Institute, The Pennsylvania State University , University Park, Pennsylvania 16802, USA.
authors.forename: Sun Young
authors.initials: SY
authors.lastname: Lee
authors.affiliation: College of Physics Science and Technology, Yangzhou University , Yangzhou 225002, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Wang
authors.affiliation: Materials Research Institute, The Pennsylvania State University , University Park, Pennsylvania 16802, USA.
authors.forename: Susan
authors.initials: S
authors.lastname: Trolier-McKinstry
keywords: bismuth compounds; ferroelectric Curie temperature; ferroelectric ceramics; ferroelectric thin films; ferroelectricity; indium compounds; lead compounds; permittivity; piezoceramics; piezoelectric thin films; piezoelectricity; pulsed laser deposition