title: Q-switched mode-locked erbium-doped fiber laser based on topological insulator Bi(2)Se(3) deposited fiber taper.
abstract: We have demonstrated the passive Q-switching mode-locking operation in an erbium-doped fiber (EDF) laser by using topological insulator Bi(2)Se(3) deposited on fiber taper, whose damage threshold can be further increased by the large evanescent field interacting length. Due to the low saturation intensity, stable Q-switched mode-locked fiber lasers centered at 1562 nm can be generated at a pump power of 10 mW. The temporal and spectral characteristics for different pump strengths have also been investigated. To the best of our knowledge, it is the first time a Q-switched mode-locked EDF laser based on the fiber taper deposited by Bi(2)Se(3) was generated.
authors.forename: Lei
authors.initials: L
authors.lastname: Gao
authors.forename: Wei
authors.initials: W
authors.lastname: Huang
authors.forename: Jing Dong
authors.initials: JD
authors.lastname: Zhang
authors.forename: Tao
authors.initials: T
authors.lastname: Zhu
authors.forename: Han
authors.initials: H
authors.lastname: Zhang
authors.forename: Chu Jun
authors.initials: CJ
authors.lastname: Zhao
authors.forename: Wei
authors.initials: W
authors.lastname: Zhang
authors.forename: Hua
authors.initials: H
authors.lastname: Zhang
mesh_terms: D001729:Bismuth / Q000737:chemistry*; D004735:Energy Transfer; D004867:Equipment Design; D019544:Equipment Failure Analysis; D004871:Erbium / Q000737:chemistry*; D005336:Fiber Optic Technology / Q000295:instrumentation*; D053844:Lasers, Solid-State; D012643:Selenium / Q000737:chemistry*; D013059:Spectrum Analysis, Raman / Q000295:instrumentation*
chemical_list: D004871:Erbium; D012643:Selenium; D001729:Bismuth