title: Theory of strain tuning fine structure splitting in self-assembled InAs/GaAs quantum dots.
abstract: We analytically derive the change in exciton fine structure splitting (FSS) under external stresses in self-assembled InAs/GaAs quantum dots, using the Bir-Pikus model. We find that the FSS change is mainly due to the strain-induced valence band mixing and valence-conduction band coupling. The exciton polarization angle under strain is determined by the argument of the electron-hole off-diagonal exchange integrals. The theory agrees well with the empirical pseudopotential calculations.
authors.affiliation: Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, People's Republic of China. Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China.
authors.forename: Jianping
authors.initials: J
authors.lastname: Wang
authors.forename: Guang-Can
authors.initials: GC
authors.lastname: Guo
authors.forename: Lixin
authors.initials: L
authors.lastname: He