title: Sign control of magnetoresistance through chemically engineered interfaces.
abstract: Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti-ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions.
authors.affiliation: Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA; CIC nanoGUNE, Tolosa Hiribidea 76, 20018, Donostia-San Sebastian, Spain.
authors.forename: David
authors.initials: D
authors.lastname: Ciudad
authors.forename: Marco
authors.initials: M
authors.lastname: Gobbi
authors.forename: Christy J
authors.initials: CJ
authors.lastname: Kinane
authors.forename: Marius
authors.initials: M
authors.lastname: Eich
authors.forename: Jagadeesh S
authors.initials: JS
authors.lastname: Moodera
authors.forename: Luis E
authors.initials: LE
authors.lastname: Hueso
keywords: engineered interfaces; lithium fluoride; magnetic tunnel junctions; organic spin valves; spinterfaces