title: Tuning the metal-insulator crossover and magnetism in SrRuO₃ by ionic gating.
abstract: Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. Here we report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO₃. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90-250 K and 70-100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.
authors.affiliation: Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
authors.forename: Hee Taek
authors.initials: HT
authors.lastname: Yi
authors.affiliation: Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
authors.forename: Bin
authors.initials: B
authors.lastname: Gao
authors.affiliation: Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA.
authors.forename: Wei
authors.initials: W
authors.lastname: Xie
authors.affiliation: 1] Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA [2] Rutgers Center for Emergent Materials (RCEM), Rutgers University, Piscataway, New Jersey 08854, USA.
authors.forename: Sang-Wook
authors.initials: SW
authors.lastname: Cheong
authors.affiliation: 1] Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA [2] Institute for Advanced Materials and Devices for Nanotechnology (IAMDN), Rutgers University, Piscataway, New Jersey 08854, USA.
authors.forename: Vitaly
authors.initials: V
authors.lastname: Podzorov