title: Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range.
abstract: We investigate the influence of Beryllium (Be) doping on the performance of photoconductive THz detectors based on molecular beam epitaxy (MBE) of low temperature (LT) grown In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As multilayer heterostructures (MLHS). We show how the optical excitation power affects carrier lifetime, detector signal, dynamic range and bandwidth in THz time domain spectroscopy (TDS) in dependence on Be-doping concentration. For optimal doping we measured a THz bandwidth in excess of 6 THz and a dynamic range of up to 90 dB.
authors.forename: Roman J B
authors.initials: RJ
authors.lastname: Dietz
authors.forename: Björn
authors.initials: B
authors.lastname: Globisch
authors.forename: Helmut
authors.initials: H
authors.lastname: Roehle
authors.forename: Dennis
authors.initials: D
authors.lastname: Stanze
authors.forename: Thorsten
authors.initials: T
authors.lastname: Göbel
authors.forename: Martin
authors.initials: M
authors.lastname: Schell