title: Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm.
abstract: Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands.
authors.forename: D C S
authors.initials: DC
authors.lastname: Dumas
authors.forename: K
authors.initials: K
authors.lastname: Gallacher
authors.forename: S
authors.initials: S
authors.lastname: Rhead
authors.forename: M
authors.initials: M
authors.lastname: Myronov
authors.forename: D R
authors.initials: DR
authors.lastname: Leadley
authors.forename: D J
authors.initials: DJ
authors.lastname: Paul