title: Diameter-controlled and surface-modified Sb₂Se₃ nanowires and their photodetector performance.
abstract: Due to its direct and narrow band gap, high chemical stability, and high Seebeck coefficient (1800 μVK(-1)), antimony selenide (Sb2Se3) has many potential applications, such as in photovoltaic devices, thermoelectric devices, and solar cells. However, research on the Sb2Se3 materials has been limited by its low electrical conductivity in bulk state. To overcome this challenge, we suggest two kinds of nano-structured materials, namely, the diameter-controlled Sb2Se3 nanowires and Ag2Se-decorated Sb2Se3 nanowires. The photocurrent response of diameter-controlled Sb2Se3, which depends on electrical conductivity of the material, increases non-linearly with the diameter of the nanowire. The photosensitivity factor (K = I(light)/I(dark)) of the intrinsic Sb2Se3 nanowire with diameter of 80-100 nm is highly improved (K = 75). Additionally, the measurement was conducted using a single nanowire under low source-drain voltage. The dark- and photocurrent of the Ag2Se-decorated Sb2Se3 nanowire further increased, as compared to that of the intrinsic Sb2Se3 nanowire, to approximately 50 and 7 times, respectively.
authors.affiliation: Department of Molecular Science and Technology, Ajou University, Suwon, Gyeonggi-do 443-749, South Korea.
authors.forename: Donghyeuk
authors.initials: D
authors.lastname: Choi
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, South Korea.
authors.forename: Yamujin
authors.initials: Y
authors.lastname: Jang
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, South Korea.
authors.forename: JeeHee
authors.initials: J
authors.lastname: Lee
authors.affiliation: Department of Molecular Science and Technology, Ajou University, Suwon, Gyeonggi-do 443-749, South Korea.
authors.forename: Gyoung Hwa
authors.initials: GH
authors.lastname: Jeong
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, South Korea.
authors.forename: Dongmok
authors.initials: D
authors.lastname: Whang
authors.affiliation: Samsung Advanced Institute of Technology(SAIT), Samsung Electronics, 130 Samsung-ro Yeongtong, Suwon, Gyeonggi-do 446-712, South Korea.
authors.forename: Sung Woo
authors.initials: SW
authors.lastname: Hwang
authors.affiliation: Samsung Advanced Institute of Technology(SAIT), Samsung Electronics, 130 Samsung-ro Yeongtong, Suwon, Gyeonggi-do 446-712, South Korea.
authors.forename: Kyung-Sang
authors.initials: KS
authors.lastname: Cho
authors.affiliation: Department of Molecular Science and Technology, Ajou University, Suwon, Gyeonggi-do 443-749, South Korea.
authors.forename: Sang-Wook
authors.initials: SW
authors.lastname: Kim