title: Quantum anomalous Hall effect in magnetically doped InAs/GaSb quantum wells.
abstract: The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr-doped (Bi,Sb)(2)Te(3) at a low temperature (∼ 30 mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with magnetically doped InAs/GaSb type-II quantum wells. Based on a four-band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.
authors.affiliation: Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA.
authors.forename: Qing-Ze
authors.initials: QZ
authors.lastname: Wang
authors.affiliation: Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA.
authors.forename: Xin
authors.initials: X
authors.lastname: Liu
authors.affiliation: Department of Physics, McCullough Building, Stanford University, Stanford, California 94305-4045, USA.
authors.forename: Hai-Jun
authors.initials: HJ
authors.lastname: Zhang
authors.affiliation: Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA.
authors.forename: Nitin
authors.initials: N
authors.lastname: Samarth
authors.affiliation: Department of Physics, McCullough Building, Stanford University, Stanford, California 94305-4045, USA.
authors.forename: Shou-Cheng
authors.initials: SC
authors.lastname: Zhang
authors.affiliation: Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA.
authors.forename: Chao-Xing
authors.initials: CX
authors.lastname: Liu