title: Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes.
abstract: In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (V(oc)) from 1.88 to 1.94 V and short-circuit current density (J(sc)) from 0.84 to 1.02 mA/cm(2) are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical front-side illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the J(sc) could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors.
authors.forename: Yi-An
authors.initials: YA
authors.lastname: Chang
authors.forename: Fang-Ming
authors.initials: FM
authors.lastname: Chen
authors.forename: Yu-Lin
authors.initials: YL
authors.lastname: Tsai
authors.forename: Ching-Wen
authors.initials: CW
authors.lastname: Chang
authors.forename: Kuo-Ju
authors.initials: KJ
authors.lastname: Chen
authors.forename: Shan-Rong
authors.initials: SR
authors.lastname: Li
authors.forename: Tien-Chang
authors.initials: TC
authors.lastname: Lu
authors.forename: Hao-Chung
authors.initials: HC
authors.lastname: Kuo
authors.forename: Yen-Kuang
authors.initials: YK
authors.lastname: Kuo
authors.forename: Peichen
authors.initials: P
authors.lastname: Yu
authors.forename: Chien-Chung
authors.initials: CC
authors.lastname: Lin
authors.forename: Li-Wei
authors.initials: LW
authors.lastname: Tu