title: Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors.
abstract: Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10 cm(2) V(-1) s(-1) and aggressively scaled saturation voltage ~1 V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications.
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: Daowei
authors.initials: D
authors.lastname: He
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: Yuhan
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, P. R. China.
authors.forename: Qisheng
authors.initials: Q
authors.lastname: Wu
authors.affiliation: Department of Physics, Beijing Normal University, Beijing 100875, P. R. China.
authors.forename: Rui
authors.initials: R
authors.lastname: Xu
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, P. R. China.
authors.forename: Haiyan
authors.initials: H
authors.lastname: Nan
authors.affiliation: Department of Physics, Beijing Normal University, Beijing 100875, P. R. China.
authors.forename: Junfang
authors.initials: J
authors.lastname: Liu
authors.affiliation: Asylum Research, Oxford Instruments, Shanghai 200233, P. R. China.
authors.forename: Jianjun
authors.initials: J
authors.lastname: Yao
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, P. R. China.
authors.forename: Zilu
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, P. R. China.
authors.forename: Shijun
authors.initials: S
authors.lastname: Yuan
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: Yun
authors.initials: Y
authors.lastname: Li
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, P. R. China.
authors.forename: Jinlan
authors.initials: J
authors.lastname: Wang
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, P. R. China.
authors.forename: Zhenhua
authors.initials: Z
authors.lastname: Ni
authors.affiliation: Department of Physics, Beijing Normal University, Beijing 100875, P. R. China.
authors.forename: Lin
authors.initials: L
authors.lastname: He
authors.affiliation: School of Physics, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: Feng
authors.initials: F
authors.lastname: Miao
authors.affiliation: School of Physics, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: Fengqi
authors.initials: F
authors.lastname: Song
authors.affiliation: CAS Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, University of Science and Technology of China, Hefei 230026, P. R. China.
authors.forename: Hangxun
authors.initials: H
authors.lastname: Xu
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Taniguchi
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, P. R. China.
authors.forename: Jian-Bin
authors.initials: JB
authors.lastname: Xu
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: Xinran
authors.initials: X
authors.lastname: Wang