title: Alignment method combining interference lithography with anisotropic wet etch technique for fabrication of high aspect ratio silicon gratings.
abstract: A method was developed for aligning interference fringes generated in interference lithography to the vertical {111} planes of <110> oriented silicon wafers. The alignment error is 0.036°. This high precision method makes it possible to combine interference lithography with anisotropic wet etch technique for the fabrication of high aspect ratio silicon gratings with extremely smooth sidewalls over a large sample area. With this alignment method, 320 nm and 2 μm period silicon gratings have been successfully fabricated. The highest aspect ratio is up to 100. The sample area is about 50 mm × 60 mm. The roughness (root mean square) of the sidewall is about 0.267 nm.
authors.forename: Yanchang
authors.initials: Y
authors.lastname: Zheng
authors.forename: Keqiang
authors.initials: K
authors.lastname: Qiu
authors.forename: Huoyao
authors.initials: H
authors.lastname: Chen
authors.forename: Yong
authors.initials: Y
authors.lastname: Chen
authors.forename: Zhengkun
authors.initials: Z
authors.lastname: Liu
authors.forename: Ying
authors.initials: Y
authors.lastname: Liu
authors.forename: Xiangdong
authors.initials: X
authors.lastname: Xu
authors.forename: Yilin
authors.initials: Y
authors.lastname: Hong
mesh_terms: D016880:Anisotropy; D036103:Nanotechnology / Q000379:methods*; D010316:Particle Size; D011327:Printing / Q000295:instrumentation*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D012825:Silicon