title: Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al₂O₃ buffer layer.
abstract: The n-ZnO/p-Si heterojunction with an ultrathin Al₂O₃ buffer layer was prepared by atomic layer deposition. X-ray diffraction revealed that the crystalline quality of (100)-oriented ZnO films was improved with an Al₂O₃ buffer layer. The n-ZnO/p-Si heterojunction with 5 nm inserted Al₂O₃ layer shows the best electrical characteristics, with a dark current of 0.5 μA at a reverse bias of -2 V and increasing the photo-to-dark current ratio effectively by 8 times. These results demonstrated that Al₂O₃ buffer layer with optimized thickness exhibits significant advantages in enhancing the crystal quality of ZnO film and improving the photoelectrical properties of n-ZnO/p-Si photodetectors.
authors.forename: Hong-Liang
authors.initials: HL
authors.lastname: Lu
authors.forename: Yu-Zhu
authors.initials: YZ
authors.lastname: Gu
authors.forename: Yuan
authors.initials: Y
authors.lastname: Zhang
authors.forename: Xin-Yan
authors.initials: XY
authors.lastname: Liu
authors.forename: Peng-Fei
authors.initials: PF
authors.lastname: Wang
authors.forename: Qing-Qing
authors.initials: QQ
authors.lastname: Sun
authors.forename: Shi-Jin
authors.initials: SJ
authors.lastname: Ding
authors.forename: David Wei
authors.initials: DW
authors.lastname: Zhang