title: Physical and electrical properties of graphene grown under different hydrogen flow in low pressure chemical vapor deposition.
abstract: Hydrogen flow during low pressure chemical vapor deposition had significant effect not only on the physical properties but also on the electrical properties of graphene. Nucleation and grain growth of graphene increased at higher hydrogen flows. And, more oxygen-related functional groups like amorphous and oxidized carbon that probably contributed to defects or contamination of graphene remained on the graphene surface at low H2 flow conditions. It is believed that at low hydrogen flow, those remained oxygen or other oxidizing impurities make the graphene films p-doped and result in decreasing the carrier mobility.
authors.affiliation: Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University, Seoul 143-747, South Korea.
authors.forename: Sajjad
authors.initials: S
authors.lastname: Hussain
authors.affiliation: Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, South Korea.
authors.forename: Muhmmad Waqas
authors.initials: MW
authors.lastname: Iqbal
authors.affiliation: Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University, Seoul 143-747, South Korea.
authors.forename: Jaehyun
authors.initials: J
authors.lastname: Park
authors.affiliation: Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University, Seoul 143-747, South Korea.
authors.forename: Muneer
authors.initials: M
authors.lastname: Ahmad
authors.affiliation: Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University, Seoul 143-747, South Korea.
authors.forename: Jai
authors.initials: J
authors.lastname: Singh
authors.affiliation: Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, South Korea.
authors.forename: Jonghwa
authors.initials: J
authors.lastname: Eom
authors.affiliation: Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University, Seoul 143-747, South Korea.
authors.forename: Jongwan
authors.initials: J
authors.lastname: Jung
keywords: CVD; Graphene synthesis; H2 flow; Mobility; Raman