title: InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.
abstract: We report the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on a Ge substrate by molecular beam epitaxy. The QD SLD exhibits a 3 dB emission bandwidth of ~60 nm centered at 1252 nm with output power of 27 mW at room temperature. The 3 dB bandwidth is very stable over the temperature range from 20 °C to 100 °C, which highlights the potential for integration with high performance ICs.
authors.forename: Qi
authors.initials: Q
authors.lastname: Jiang
authors.forename: Mingchu
authors.initials: M
authors.lastname: Tang
authors.forename: Siming
authors.initials: S
authors.lastname: Chen
authors.forename: Jiang
authors.initials: J
authors.lastname: Wu
authors.forename: Alwyn
authors.initials: A
authors.lastname: Seeds
authors.forename: Huiyun
authors.initials: H
authors.lastname: Liu
mesh_terms: D001152:Arsenicals; D004867:Equipment Design; D005708:Gallium; D007204:Indium; D008027:Light; D036103:Nanotechnology / Q000295:instrumentation*; D045663:Quantum Dots
chemical_list: D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium; C076773:indium arsenide