title: Controlled morphology and optical properties of n-type porous silicon: effect of magnetic field and electrode-assisted LEF.
abstract: Fabrication of photoluminescent n-type porous silicon (nPS), using electrode-assisted lateral electric field accompanied with a perpendicular magnetic field, is reported. The results have been compared with the porous structures fabricated by means of conventional anodization and electrode-assisted lateral electric field without magnetic field. The lateral electric field (LEF) applied across the silicon substrate leads to the formation of structural gradient in terms of density, dimension, and depth of the etched pores. Apart from the pore shape tunability, the simultaneous application of LEF and magnetic field (MF) contributes to a reduction of the dimension of the pores and promotes relatively more defined pore tips as well as a decreased side-branching in the pore walls of the macroporous structure. Additionally, when using magnetic field-assisted etching, within a certain range of LEF, an enhancement of the photoluminescence (PL) response was obtained.
authors.affiliation: Center for Research in Engineering and Applied Sciences, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos CP 62210, México.
authors.forename: Edgar E
authors.initials: EE
authors.lastname: Antunez
authors.affiliation: Institute for Renewable Energy, UNAM, Priv. Xochicalco S/N, Temixco, Morelos CP 62580, México.
authors.forename: Jose
authors.initials: J
authors.lastname: Campos
authors.affiliation: Center for Research in Engineering and Applied Sciences, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos CP 62210, México.
authors.forename: Miguel A
authors.initials: MA
authors.lastname: Basurto
authors.affiliation: Center for Research in Engineering and Applied Sciences, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos CP 62210, México.
authors.forename: Vivechana
authors.initials: V
authors.lastname: Agarwal
keywords: Lateral electric field; Macropore; Magnetic field; Photoluminescence; Porous silicon; Structural gradient; n-type