title: Mapping charge-carrier density across the p-n junction in ambipolar carbon-nanotube networks by Raman microscopy.
abstract: In situ confocal Raman microscopy is used to map the recombination zone (induced p-n junction) in an ambipolar carbon-nanotube-network transistor with high spatial resolution. The shift of the 2D mode (G' mode) depending on hole and electron accumulation serves as a measure for the local charge-carrier density and provides complementary information about charge transport and recombination in ambipolar transistors.
authors.affiliation: Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058, Erlangen, Germany.
authors.forename: Stefan B
authors.initials: SB
authors.lastname: Grimm
authors.forename: Florian
authors.initials: F
authors.lastname: Jakubka
authors.forename: Stefan P
authors.initials: SP
authors.lastname: Schießl
authors.forename: Florentina
authors.initials: F
authors.lastname: Gannott
authors.forename: Jana
authors.initials: J
authors.lastname: Zaumseil
keywords: Raman microscopy; ambipolar; carbon nanotubes; electrolyte-gating; mapping