title: Formamide mediated, air-brush printable, indium-free soluble Zn-Sn-O semiconductors for thin-film transistor applications.
abstract: In this study, for high-performance indium-free metal oxide channel layer, we synthesize Zn-Sn-O (ZTO) precursor solutions in which formamide is incorporated as an additive for catalyzing the subsequent sol-gel reactions and the evolution of chemical structure. It is revealed that the formamide plays a critical chemical role in evolving a chemical structure with more oxygen-deficient oxide lattice and with less hydroxide, allowing for high field-effect mobility over 7 cm(2)/V·s. Furthermore, it is for the first time demonstrated that electrically active metal-oxide films can be patterned, using an air-brush printing technique, by directly depositing formamide-mediated ZTO-precursor solutions in patterned geometries.
authors.affiliation: Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT) , 141 Gajeongro, Yuseong-gu, Daejeon 305-600, Republic of Korea.
authors.forename: Seong Jip
authors.initials: SJ
authors.lastname: Kim
authors.forename: Hye-Ji
authors.initials: HJ
authors.lastname: Jeon
authors.forename: Sang-Jin
authors.initials: SJ
authors.lastname: Oh
authors.forename: Sun Sook
authors.initials: SS
authors.lastname: Lee
authors.forename: Youngmin
authors.initials: Y
authors.lastname: Choi
authors.forename: Jin-Seong
authors.initials: JS
authors.lastname: Park
authors.forename: Sunho
authors.initials: S
authors.lastname: Jeong
keywords: formamide; indium free; print; semiconductor; transistor; zinc tin oxide