title: Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires.
abstract: Although various device structures based on GaSb nanowires have been realized, further performance enhancement suffers from uncontrolled radial growth during the nanowire synthesis, resulting in non-uniform and tapered nanowires with diameters larger than few tens of nanometres. Here we report the use of sulfur surfactant in chemical vapour deposition to achieve very thin and uniform GaSb nanowires with diameters down to 20 nm. In contrast to surfactant effects typically employed in the liquid phase and thin-film technologies, the sulfur atoms contribute to form stable S-Sb bonds on the as-grown nanowire surface, effectively stabilizing sidewalls and minimizing unintentional radial nanowire growth. When configured into transistors, these devices exhibit impressive electrical properties with the peak hole mobility of ~200 cm(2 )V(-1 )s(-1), better than any mobility value reported for a GaSb nanowire device to date. These factors indicate the effectiveness of this surfactant-assisted growth for high-performance small-diameter GaSb nanowires.
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: Zai-xing
authors.initials: ZX
authors.lastname: Yang
authors.affiliation: 1] Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong [2] Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China.
authors.forename: Ning
authors.initials: N
authors.lastname: Han
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: Ming
authors.initials: M
authors.lastname: Fang
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: Hao
authors.initials: H
authors.lastname: Lin
authors.affiliation: Department of Biology and Chemistry, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: Ho-Yuen
authors.initials: HY
authors.lastname: Cheung
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: SenPo
authors.initials: S
authors.lastname: Yip
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: Er-Jun
authors.initials: EJ
authors.lastname: Wang
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: TakFu
authors.initials: T
authors.lastname: Hung
authors.affiliation: Department of Biology and Chemistry, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: Chun-Yuen
authors.initials: CY
authors.lastname: Wong
authors.affiliation: 1] Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong [2] Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China.
authors.forename: Johnny C
authors.initials: JC
authors.lastname: Ho