title: Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation.
abstract: As one of the most emerging next-generation nonvolatile memories, one-transistor (1T)-type nonvolatile memories are of great attention due to their excellent memory performance and simple device architecture suitable for high density memory arrays. In particular, organic 1T-type memories containing both organic semiconductors and insulators are further beneficial because of their mechanical flexibility with low cost fabrication. Here, we demonstrate a new flexible organic 1T-type memory operating at low voltage. The low voltage operation of a memory less than 10 V was obtained by employing a polymer gate insulator solution blended with ionic liquid as a charge storage layer. Ionic liquid homogeneously dissolved in a thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film gave rise to low voltage operation of a device due to its high capacitance. Simultaneously, stable charge trapping of either anions or cations efficiently occurred in the polymer matrix, dependent upon gate bias. Optimization of ionic liquid in PVDF-TrFE thus led to an air-stable and mechanically flexible organic 1T-type nonvolatile memory operating at programming voltage of ±7 V with large ON/OFF current margin of approximately 10(3), reliable time-dependent data retention of more than 10(4) seconds, and write/read endurance cycles of 80.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University , 134 Shinchon-dong, Seodaemoon-gu, Seoul 120749, Republic of Korea.
authors.forename: Sun Kak
authors.initials: SK
authors.lastname: Hwang
authors.forename: Tae Joon
authors.initials: TJ
authors.lastname: Park
authors.forename: Kang Lib
authors.initials: KL
authors.lastname: Kim
authors.forename: Suk Man
authors.initials: SM
authors.lastname: Cho
authors.forename: Beom Jin
authors.initials: BJ
authors.lastname: Jeong
authors.forename: Cheolmin
authors.initials: C
authors.lastname: Park
keywords: charge trapping memory; field effect transistor memory; flexible memory; ionic liquid-polymer gate insulators; low voltage operation; organic memory