title: Postfabrication annealing effects on insulator-metal transitions in VO2 thin-film devices.
abstract: In order to investigate the metal-insulator transition characteristics of VO2 devices annealed in reducing atmosphere after device fabrication at various temperature, electrical, chemical, and thermal characteristics are measured and analyzed. It is found that the sheet resistance and the insulator-metal transition point, induced by both voltage and thermal, decrease when the devices are annealed from 200 to 500 °C. The V 2p3/2 peak variation in X-ray photoelectron spectroscopy (XPS) characterization verifies the reduction of thin-films. A decrease of the transition temperature from voltage hysteresis measurements further endorse the reducing effects of the annealing on VO2 thin-film.
authors.affiliation: School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University , Suwon 440-746, Korea.
authors.forename: Servin
authors.initials: S
authors.lastname: Rathi
authors.forename: In-yeal
authors.initials: IY
authors.lastname: Lee
authors.forename: Jin-Hyung
authors.initials: JH
authors.lastname: Park
authors.forename: Bong-Jun
authors.initials: BJ
authors.lastname: Kim
authors.forename: Hyun-Tak
authors.initials: HT
authors.lastname: Kim
authors.forename: Gil-Ho
authors.initials: GH
authors.lastname: Kim
keywords: annealing; metal−insulator transition; transmission line method; vanadium dioxide thin-films