title: Raman scattering study of InAs nanowires under high pressure.
abstract: The pressure-dependent phonon modes of InAs nanowires have been investigated by Raman spectroscopy under high pressure up to ∼58 GPa. X-ray diffraction measurements show that InAs nanowires at 21 GPa exhibit a phase transition from a wurtzite to an orthorhombic crystal structure, with a corresponding drastic change in the first-order Raman spectra. In the low-pressure regime, a linear increase in phonon frequencies is observed, whereas splitting between longitudinal and transversal optical phonon modes decreases as a function of applied pressure. The calculated mode Grüneisen parameters and Born's transverse effective charge indicate that the wurtzite InAs nanowires exhibit a more covalent nature under compression.
authors.affiliation: Department of Physics, Bose Institute, 93/1, Acharya Prafulla Chandra Road, Kolkata 700009, India.
authors.forename: Dipanwita
authors.initials: D
authors.lastname: Majumdar
authors.forename: Abhisek
authors.initials: A
authors.lastname: Basu
authors.forename: Goutam
authors.initials: G
authors.lastname: Dev Mukherjee
authors.forename: Daniele
authors.initials: D
authors.lastname: Ercolani
authors.forename: Lucia
authors.initials: L
authors.lastname: Sorba
authors.forename: Achintya
authors.initials: A
authors.lastname: Singha