title: Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors.
abstract: Pulsed laser deposited Au-BFO-Pt/Ti/Sapphire MIM structures offer excellent bipolar resistive switching performance, including electroforming free, long retention time at 358 K, and highly stable endurance. Here we develop a model on modifiable Schottky barrier heights and elucidate the physical origin underlying resistive switching in BiFeO3 memristors containing mobile oxygen vacancies. Increased switching speed is possible by applying a large amplitude writing pulse as the resistive switching is tunable by both the amplitude and length of the writing pulse. The local resistive switching has been investigated by conductive atomic force microscopy and exhibits the capability of down-scaling the resistive switching cell to the grain size.
authors.affiliation: Material Systems for Nanoelectronics, Technische Universität Chemnitz , Chemnitz 09126, Germany.
authors.forename: Tiangui
authors.initials: T
authors.lastname: You
authors.forename: Nan
authors.initials: N
authors.lastname: Du
authors.forename: Stefan
authors.initials: S
authors.lastname: Slesazeck
authors.forename: Thomas
authors.initials: T
authors.lastname: Mikolajick
authors.forename: Guodong
authors.initials: G
authors.lastname: Li
authors.forename: Danilo
authors.initials: D
authors.lastname: Bürger
authors.forename: Ilona
authors.initials: I
authors.lastname: Skorupa
authors.forename: Hartmut
authors.initials: H
authors.lastname: Stöcker
authors.forename: Barbara
authors.initials: B
authors.lastname: Abendroth
authors.forename: Andreas
authors.initials: A
authors.lastname: Beyer
authors.forename: Kerstin
authors.initials: K
authors.lastname: Volz
authors.forename: Oliver G
authors.initials: OG
authors.lastname: Schmidt
authors.forename: Heidemarie
authors.initials: H
authors.lastname: Schmidt
keywords: BiFeO3 thin films; Ti diffusion; bipolar resistive switching; mobile oxygen vacancy; modifiable rectification properties; reliability