title: Graphene nanoribbons under mechanical strain.
abstract: Uniaxial strains are introduced into individual graphene nanoribbons (GNRs) with highly smooth edges to investigate the strain effects on Raman spectroscopic and electrical properties of GNRs. It is found that uniaxial strain downshifts the Raman G-band frequency of GNRs linearly and tunes their bandgap significantly in a non-monotonic manner. The strain engineering of GNRs is promising for potential electronics and photonics applications.
authors.affiliation: Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, California, 94305, USA; Key Laboratory for Thin Film and Micro fabrication of the Ministry of Education, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, PR China.
authors.forename: Changxin
authors.initials: C
authors.lastname: Chen
authors.forename: Justin Zachary
authors.initials: JZ
authors.lastname: Wu
authors.forename: Kai Tak
authors.initials: KT
authors.lastname: Lam
authors.forename: Guosong
authors.initials: G
authors.lastname: Hong
authors.forename: Ming
authors.initials: M
authors.lastname: Gong
authors.forename: Bo
authors.initials: B
authors.lastname: Zhang
authors.forename: Yang
authors.initials: Y
authors.lastname: Lu
authors.forename: Alexander L
authors.initials: AL
authors.lastname: Antaris
authors.forename: Shuo
authors.initials: S
authors.lastname: Diao
authors.forename: Jing
authors.initials: J
authors.lastname: Guo
authors.forename: Hongjie
authors.initials: H
authors.lastname: Dai
keywords: Raman spectroscopy; bandgap modulation; graphene nanoribbon field-effect transistors (GNRFETs); graphene nanoribbons; mechanical strain