title: Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors.
abstract: In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.
authors.affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.
authors.forename: Liuan
authors.initials: L
authors.lastname: Li
authors.affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.
authors.forename: Ryosuke
authors.initials: R
authors.lastname: Nakamura
authors.affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.
authors.forename: Qingpeng
authors.initials: Q
authors.lastname: Wang
authors.affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.
authors.forename: Ying
authors.initials: Y
authors.lastname: Jiang
authors.affiliation: Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan.
authors.forename: Jin-Ping
authors.initials: JP
authors.lastname: Ao
keywords: 73.40.Kp; 73.40.Qv; 77.84.Bw; AlGaN/GaN heterostructure field-effect transistors; Self-aligned gate; Titanium nitride