title: Quantum noise and asymmetric scattering of electrons and holes in graphene.
abstract: We present measurements of quantum interference noise in double-gated single layer graphene devices at low temperatures. The noise characteristics show a nonmonotonic dependence on carrier density, which is related to the interplay between charge inhomogeneity and different scattering mechanisms. Linearly increasing 1/f noise at low carrier densities coincides with the observation of weak localization, suggesting the importance of short-range disorder in this regime. Using perpendicular and parallel p-n junctions, we find that the observed asymmetry of the noise with respect to the Dirac point can be related to asymmetric scattering of electrons and holes on the disorder potential.
authors.affiliation: Department of Physics and Astronomy, Johns Hopkins University , Baltimore, Maryland 21218, United States.
authors.forename: Atikur
authors.initials: A
authors.lastname: Rahman
authors.forename: Janice Wynn
authors.initials: JW
authors.lastname: Guikema
authors.forename: Nina
authors.initials: N
authors.lastname: Marković
keywords: 1/f noise; Graphene; conductance fluctuations; quantum transport