title: Spin transport in dangling-bond wires on doped H-passivated Si(100).
abstract: New advances in single-atom manipulation are leading to the creation of atomic structures on H-passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters.
authors.affiliation: Institut des Sciences Chimiques de Rennes UMR 6226, CNRS-Université de Rennes 1, Rennes, France. ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona), Spain.
authors.forename: Mikaël
authors.initials: M
authors.lastname: Kepenekian
authors.forename: Roberto
authors.initials: R
authors.lastname: Robles
authors.forename: Riccardo
authors.initials: R
authors.lastname: Rurali
authors.forename: Nicolás
authors.initials: N
authors.lastname: Lorente