title: Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application.
abstract: To simplify the architecture of a neuromorphic system, it is extremely desirable to develop synaptic cells with the capacity of low operation power, high density integration, and well controlled synaptic behaviors. In this study, we develop a resistive switching device (ReRAM)-based synaptic cell, fabricated by the CMOS compatible nano-fabrication technology. The developed synaptic cell consists of one vertical gate-all-around Si nano-pillar transistor (1T) and one transition metal-oxide based resistive switching device (1R) stacked on top of the vertical transistor directly. Thanks to the vertical architecture and excellent controllability on the ON/OFF performance of the nano-pillar transistor, the 1T1R synaptic cell shows excellent characteristics such as extremely high-density integration ability with 4F(2) footprint, ultra-low operation current (<2 nA), fast switching speed (<10 ns), multilevel data storage and controllable synaptic switching, which are extremely desirable for simplifying the architecture of neuromorphic system.
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Bing
authors.initials: B
authors.lastname: Chen
authors.affiliation: Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685.
authors.forename: Xinpeng
authors.initials: X
authors.lastname: Wang
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Bin
authors.initials: B
authors.lastname: Gao
authors.affiliation: Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Fang
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Jinfeng
authors.initials: J
authors.lastname: Kang
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Lifeng
authors.initials: L
authors.lastname: Liu
authors.affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China.
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Liu
authors.affiliation: Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685.
authors.forename: Guo-Qiang
authors.initials: GQ
authors.lastname: Lo
authors.affiliation: Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685.
authors.forename: Dim-Lee
authors.initials: DL
authors.lastname: Kwong
mesh_terms: D014173:Transistors, Electronic