title: Atomically engineered metal-insulator transition at the TiO2/LaAlO3 heterointerface.
abstract: We demonstrate that the atomic boundary conditions of simple binary oxides can be used to impart dramatic changes of state. By changing the substrate surface termination of LaAlO3 (001) from AlO2 to LaO, the room-temperature sheet conductance of anatase TiO2 films are increased by over 3 orders of magnitude, transforming the intrinsic insulating state to a high mobility metallic state, while maintaining excellent optical transparency.
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.
authors.forename: Makoto
authors.initials: M
authors.lastname: Minohara
authors.forename: Takashi
authors.initials: T
authors.lastname: Tachikawa
authors.forename: Yasuo
authors.initials: Y
authors.lastname: Nakanishi
authors.forename: Yasuyuki
authors.initials: Y
authors.lastname: Hikita
authors.forename: Lena F
authors.initials: LF
authors.lastname: Kourkoutis
authors.forename: Jun-Sik
authors.initials: JS
authors.lastname: Lee
authors.forename: Chi-Chang
authors.initials: CC
authors.lastname: Kao
authors.forename: Masahiro
authors.initials: M
authors.lastname: Yoshita
authors.forename: Hidefumi
authors.initials: H
authors.lastname: Akiyama
authors.forename: Christopher
authors.initials: C
authors.lastname: Bell
authors.forename: Harold Y
authors.initials: HY
authors.lastname: Hwang
keywords: Anatase TiO2; heterointerfaces; metal−insulator transition; termination layer switching