title: A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.
abstract: An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.
authors.affiliation: Bayerisches Geoinstitut, Universität Bayreuth, Universitätsstrasse 30, D-95447, Bayreuth, Germany.
authors.forename: Sergey V
authors.initials: SV
authors.lastname: Ovsyannikov
authors.forename: Alexander E
authors.initials: AE
authors.lastname: Karkin
authors.forename: Natalia V
authors.initials: NV
authors.lastname: Morozova
authors.forename: Vladimir V
authors.initials: VV
authors.lastname: Shchennikov
authors.forename: Elena
authors.initials: E
authors.lastname: Bykova
authors.forename: Artem M
authors.initials: AM
authors.lastname: Abakumov
authors.forename: Alexander A
authors.initials: AA
authors.lastname: Tsirlin
authors.forename: Konstantin V
authors.initials: KV
authors.lastname: Glazyrin
authors.forename: Leonid
authors.initials: L
authors.lastname: Dubrovinsky
keywords: bandgap engineering; direct-bandgap semiconductors; electronic transport; transition metal oxides