title: Electronic transport in heterostructures of chemical vapor deposited graphene and hexagonal boron nitride.
abstract: CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low-contamination transfer method, and their electrical performance is systematically compared to devices on SiO(2). An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five-layer CVD hBN.
authors.affiliation: Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania, 19104, USA.
authors.forename: Zhengqing John
authors.initials: ZJ
authors.lastname: Qi
authors.forename: Sung Ju
authors.initials: SJ
authors.lastname: Hong
authors.forename: Julio A
authors.initials: JA
authors.lastname: Rodríguez-Manzo
authors.forename: Nicholas J
authors.initials: NJ
authors.lastname: Kybert
authors.forename: Rajatesh
authors.initials: R
authors.lastname: Gudibande
authors.forename: Marija
authors.initials: M
authors.lastname: Drndić
authors.forename: Yung Woo
authors.initials: YW
authors.lastname: Park
authors.forename: A T Charlie
authors.initials: AT
authors.lastname: Johnson
mesh_terms: D001896:Boron Compounds / Q000737:chemistry*; D003460:Crystallization / Q000379:methods; D004553:Electric Conductivity; D004579:Electron Transport; D005740:Gases / Q000737:chemistry*; D006108:Graphite / Q000737:chemistry*; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D010087:Oxides / Q000737:chemistry; D010316:Particle Size; D013499:Surface Properties
chemical_list: D001896:Boron Compounds; D005740:Gases; D010087:Oxides; C017282:boron nitride; D006108:Graphite
keywords: current annealing; electron transport; graphene; heterostructures; hexagonal boron nitride; substrate engineering