title: Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.
abstract: Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.
authors.affiliation: Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
authors.forename: Haolin
authors.initials: H
authors.lastname: Wang
authors.forename: Xingwang
authors.initials: X
authors.lastname: Zhang
authors.forename: Junhua
authors.initials: J
authors.lastname: Meng
authors.forename: Zhigang
authors.initials: Z
authors.lastname: Yin
authors.forename: Xin
authors.initials: X
authors.lastname: Liu
authors.forename: Yajuan
authors.initials: Y
authors.lastname: Zhao
authors.forename: Liuqi
authors.initials: L
authors.lastname: Zhang
keywords: hexagonal boron nitrides; hydrogen; ion beam sputtering deposition