title: Perovskite thin films via atomic layer deposition.
abstract: A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada.
authors.forename: Brandon R
authors.initials: BR
authors.lastname: Sutherland
authors.forename: Sjoerd
authors.initials: S
authors.lastname: Hoogland
authors.forename: Michael M
authors.initials: MM
authors.lastname: Adachi
authors.forename: Pongsakorn
authors.initials: P
authors.lastname: Kanjanaboos
authors.forename: Chris T O
authors.initials: CT
authors.lastname: Wong
authors.forename: Jeffrey J
authors.initials: JJ
authors.lastname: McDowell
authors.forename: Jixian
authors.initials: J
authors.lastname: Xu
authors.forename: Oleksandr
authors.initials: O
authors.lastname: Voznyy
authors.forename: Zhijun
authors.initials: Z
authors.lastname: Ning
authors.forename: Arjan J
authors.initials: AJ
authors.lastname: Houtepen
authors.forename: Edward H
authors.initials: EH
authors.lastname: Sargent
keywords: atomic layer deposition; optical gain; perovskites; transient absorption