title: Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique.
abstract: High-performance ultra-thin oxide layers are required for various next-generation electronic and optical devices. In particular, ultra-thin resistive switching (RS) oxide layers are expected to become fundamental building blocks of three-dimensional high-density non-volatile memory devices. Until now, special deposition techniques have been introduced for realization of high-quality ultra-thin oxide layers. Here, we report that ultra-thin oxide layers with reliable RS behavior can be self-assembled by field-induced oxygen migration (FIOM) at the interface of an oxide-conductor/oxide-insulator or oxide-conductor/metal. The formation via FIOM of an ultra-thin oxide layer with a thickness of approximately 2-5 nm and 2.5% excess oxygen content is demonstrated using cross-sectional transmission electron microscopy and secondary ion mass spectroscopy depth profile. The observed RS behavior, such as the polarity dependent forming process, can be attributed to the formation of an ultra-thin oxide layer. In general, as oxygen ions are mobile in many oxide-conductors, FIOM can be used for the formation of ultra-thin oxide layers with desired properties at the interfaces or surfaces of oxide-conductors in high-performance oxide-based devices.
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul. 143-701, Korea.
authors.forename: Sangik
authors.initials: S
authors.lastname: Lee
authors.affiliation: Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul. 136-791, Korea.
authors.forename: Inrok
authors.initials: I
authors.lastname: Hwang
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul. 143-701, Korea.
authors.forename: Sungtaek
authors.initials: S
authors.lastname: Oh
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul. 143-701, Korea.
authors.forename: Sahwan
authors.initials: S
authors.lastname: Hong
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul. 143-701, Korea.
authors.forename: Yeonsoo
authors.initials: Y
authors.lastname: Kim
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul. 143-701, Korea.
authors.forename: Yoonseung
authors.initials: Y
authors.lastname: Nam
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul. 143-701, Korea.
authors.forename: Keundong
authors.initials: K
authors.lastname: Lee
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul. 143-701, Korea.
authors.forename: Chansoo
authors.initials: C
authors.lastname: Yoon
authors.affiliation: Korea Research Institute of Standards and Science (KRISS), Daejeon. 305-340, Korea.
authors.forename: Wondong
authors.initials: W
authors.lastname: Kim
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul. 143-701, Korea.
authors.forename: Bae Ho
authors.initials: BH
authors.lastname: Park