title: Detailed formation processes of stable dislocations in graphene.
abstract: We use time-dependent HRTEM to reveal that stable dislocation pairs in graphene are formed from an initial complex multi-vacancy cluster that undergoes multiple bond rotations and adatom incorporation. In the process, it is found that the transformation from the formed complex multi-vacancy cluster can proceed without the increase of vacancy because many atoms and dimers are not only evaporated but also actively adsorbed. In tight-binding molecular dynamics simulations, it is confirmed that adatoms play an important role in the reconstruction of non-hexagonal rings into hexagonal rings. From density functional theory calculations, it is also found from simulations that there is a favorable distance between two dislocations pointing away from each other (i.e. formed from atom loss). For dislocation pairs pointing away from each other, the hillock-basin structure is more stable than the hillock-hillock structure for dislocation pairs pointing away from each other (i.e. formed from atom loss).
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.
authors.forename: Gun-Do
authors.initials: GD
authors.lastname: Lee
authors.forename: Euijoon
authors.initials: E
authors.lastname: Yoon
authors.forename: Kuang
authors.initials: K
authors.lastname: He
authors.forename: Alex W
authors.initials: AW
authors.lastname: Robertson
authors.forename: Jamie H
authors.initials: JH
authors.lastname: Warner