title: Anomalous and highly efficient InAs nanowire phototransistors based on majority carrier transport at room temperature.
abstract: Core/shell-like n-type InAs nanowire phototransistors based on majority-carrier-dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self-assembled near-surface photogating layer, forming a built-in electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China.
authors.forename: Nan
authors.initials: N
authors.lastname: Guo
authors.forename: Weida
authors.initials: W
authors.lastname: Hu
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.forename: SenPo
authors.initials: S
authors.lastname: Yip
authors.forename: Johnny C
authors.initials: JC
authors.lastname: Ho
authors.forename: Jinshui
authors.initials: J
authors.lastname: Miao
authors.forename: Zhi
authors.initials: Z
authors.lastname: Zhang
authors.forename: Jin
authors.initials: J
authors.lastname: Zou
authors.forename: Tao
authors.initials: T
authors.lastname: Jiang
authors.forename: Shiwei
authors.initials: S
authors.lastname: Wu
authors.forename: Xiaoshuang
authors.initials: X
authors.lastname: Chen
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
keywords: InAs nanowires; majority carrier transport; photogating effect; phototransistors