title: Quantum molecular dynamics study on the structures and dc conductivity of warm dense silane.
abstract: The ionic and electronic structures of warm dense silane at the densities of 1.795, 2.260, 3.382, and 3.844 g/cm(3) have been studied with temperatures from 1000 K to 3 eV using quantum molecular dynamics simulations. At all densities, the structures are melted above 1000 K. The matter states are characterized as polymeric from 1000 to 4000 K and become dense plasma states with further increasing temperature to 1 eV. At two lower densities of 1.795 and 2.260 g/cm(3), silane first dissociates and then becomes the polymeric state via a chain state from the initial crystalline structure. At higher densities, however, no dissociation stage was found. These findings can help us understand how the warm dense matter forms. A rise is found for the direct current electric conductivity at T ∼ 1000 K, indicating the nonmetal-to-metal transition. The conductivity decreases slightly with the increase of temperature, which is due to the more disordered structures at higher temperatures.
authors.affiliation: Department of Physics, College of Science, National University of Defense Technology, Changsha 410073, People's Republic of China.
authors.forename: Huayang
authors.initials: H
authors.lastname: Sun
authors.affiliation: Department of Physics, College of Science, National University of Defense Technology, Changsha 410073, People's Republic of China.
authors.forename: Dongdong
authors.initials: D
authors.lastname: Kang
authors.affiliation: Department of Physics, College of Science, National University of Defense Technology, Changsha 410073, People's Republic of China.
authors.forename: Jiayu
authors.initials: J
authors.lastname: Dai
authors.affiliation: Department of Physics, College of Science, National University of Defense Technology, Changsha 410073, People's Republic of China.
authors.forename: Jiaolong
authors.initials: J
authors.lastname: Zeng
authors.affiliation: Department of Physics, College of Science, National University of Defense Technology, Changsha 410073, People's Republic of China and State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, People's Republic of China.
authors.forename: Jianmin
authors.initials: J
authors.lastname: Yuan
mesh_terms: D003198:Computer Simulation; D004553:Electric Conductivity; D006358:Hot Temperature; D008956:Models, Chemical; D056004:Molecular Dynamics Simulation; D008970:Molecular Weight; D058626:Plasma Gases / Q000737:chemistry*; D011789:Quantum Theory; D012821:Silanes / Q000737:chemistry*
chemical_list: D058626:Plasma Gases; D012821:Silanes