title: Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application.
abstract: This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-transistor-1-ReRAM (1T-1R) structure and system-on-chip integration. The modulated shape of the Cu-SiO2 interface and the thickness of the SiO2 layer obtained by CDT-based Cu deposition on SiO2 were confirmed by scanning electron microscopy and atomic force microscopy. The CDT-fabricated Cu/SiO2-stacked ReRAM exhibited lower operation voltages and more stable data retention characteristics than the control Cu/SiO2-stacked sample. As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO2-stacked ReRAM decreased. Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time. Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.
authors.affiliation: Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, No. 100 Wenhwa Rd., Seatwen, Taichung 40724, Taiwan.
authors.forename: Fun-Tat
authors.initials: FT
authors.lastname: Chin
authors.affiliation: Department of Electronic Engineering, National United University, 1, Lienda, Miaoli 36003, Taiwan.
authors.forename: Yu-Hsien
authors.initials: YH
authors.lastname: Lin
authors.affiliation: Department of Electronic Engineering, National Chin Yi University of Technology, No. 57, Sec. 2, Zhongshan Rd., Taiping Dist., Taichung 41170, Taiwan.
authors.forename: Hsin-Chiang
authors.initials: HC
authors.lastname: You
authors.affiliation: Department of Electronic Engineering, Feng Chia University, No. 100 Wenhwa Rd., Seatwen, Taichung 40724, Taiwan.
authors.forename: Wen-Luh
authors.initials: WL
authors.lastname: Yang
authors.affiliation: Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, No. 100 Wenhwa Rd., Seatwen, Taichung 40724, Taiwan.
authors.forename: Li-Min
authors.initials: LM
authors.lastname: Lin
authors.affiliation: Ph.D. Program of Electrical and Communications Engineering, Feng Chia University, No. 100 Wenhwa Rd., Seatwen, Taichung 40724, Taiwan.
authors.forename: Yu-Ping
authors.initials: YP
authors.lastname: Hsiao
authors.affiliation: Department of Electronic Engineering, Feng Chia University, No. 100 Wenhwa Rd., Seatwen, Taichung 40724, Taiwan.
authors.forename: Chum-Min
authors.initials: CM
authors.lastname: Ko
authors.affiliation: Department of Electrophysics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan.
authors.forename: Tien-Sheng
authors.initials: TS
authors.lastname: Chao
keywords: Cu CDT; ECM; ReRAM; SiO2