title: Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric.
abstract: Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.
authors.affiliation: Namlab gGmbH, Nöthnitzerstraße 64, 01187, Dresden, Germany.
authors.forename: Dominik
authors.initials: D
authors.lastname: Martin
authors.forename: Johannes
authors.initials: J
authors.lastname: Müller
authors.forename: Tony
authors.initials: T
authors.lastname: Schenk
authors.forename: Thomas M
authors.initials: TM
authors.lastname: Arruda
authors.forename: Amit
authors.initials: A
authors.lastname: Kumar
authors.forename: Evgheni
authors.initials: E
authors.lastname: Strelcov
authors.forename: Ekaterina
authors.initials: E
authors.lastname: Yurchuk
authors.forename: Stefan
authors.initials: S
authors.lastname: Müller
authors.forename: Darius
authors.initials: D
authors.lastname: Pohl
authors.forename: Uwe
authors.initials: U
authors.lastname: Schröder
authors.forename: Sergei V
authors.initials: SV
authors.lastname: Kalinin
authors.forename: Thomas
authors.initials: T
authors.lastname: Mikolajick
keywords: HfO2; Si-doping; antiferroelectricity; electromechanical response mechanisms; ferroelectricity; piezoresponse force microscopy (PFM)