title: Ultrafast transient terahertz conductivity of monolayer MoS₂ and WSe₂ grown by chemical vapor deposition.
abstract: We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.
authors.affiliation: Department of Physics, University of Oxford , Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.
authors.forename: Callum J
authors.initials: CJ
authors.lastname: Docherty
authors.forename: Patrick
authors.initials: P
authors.lastname: Parkinson
authors.forename: Hannah J
authors.initials: HJ
authors.lastname: Joyce
authors.forename: Ming-Hui
authors.initials: MH
authors.lastname: Chiu
authors.forename: Chang-Hsiao
authors.initials: CH
authors.lastname: Chen
authors.forename: Ming-Yang
authors.initials: MY
authors.lastname: Lee
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.forename: Laura M
authors.initials: LM
authors.lastname: Herz
authors.forename: Michael B
authors.initials: MB
authors.lastname: Johnston
keywords: CVD; molybdenum disulfide; photoluminescence; terahertz conductivity; transition metal dichalcogenide; tungsten diselenide; ultrafast