title: Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy.
abstract: We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent Raman spectroscopy. We find that the heavy-hole and light-hole splitting is ∼95 meV at 10 K and the Stokes shift is in the range of 35-55 meV. These findings provide important insight in the band structure of wurtzite InGaAs that could be used for future bandgap engineering.
authors.affiliation: Walter Schottky Institut & Physik Department, Technische Universität München , D-85748 Garching, Germany.
authors.forename: Xiaodong
authors.initials: X
authors.lastname: Wang
authors.forename: Ilaria
authors.initials: I
authors.lastname: Zardo
authors.forename: Danče
authors.initials: D
authors.lastname: Spirkoska
authors.forename: Sara
authors.initials: S
authors.lastname: Yazji
authors.forename: Kar Wei
authors.initials: KW
authors.lastname: Ng
authors.forename: Wai Son
authors.initials: WS
authors.lastname: Ko
authors.forename: Connie J
authors.initials: CJ
authors.lastname: Chang-Hasnain
authors.forename: Jonathan J
authors.initials: JJ
authors.lastname: Finley
authors.forename: Gerhard
authors.initials: G
authors.lastname: Abstreiter
keywords: InGaAs nanoneedle; Raman spectroscopy; band structure; photoluminescence excitation spectroscopy; wurtzite