title: Band gap tunable Zn2SnO4 nanocubes through thermal effect and their outstanding ultraviolet light photoresponse.
abstract: This work presents a method for synthesis of high-yield, uniform and band gap tunable Zn2SnO4 nanocubes. These nanocubes can be further self-assembled into a series of novel nanofilms with tunable optical band gaps from 3.54 to 3.18 eV by simply increasing the heat treatment temperature. The Zn2SnO4 nanocube-nanofilm based device has been successfully fabricated and presents obviously higher photocurrent, larger photocurrent to dark current ratio than the previously reported individual nanostructure-based UV-light photodetectors, and could be used in high performance photodetectors, solar cells, and electrode materials for Li-ion battery.
authors.affiliation: Department of Materials Science, Fudan University, Shanghai 200433, P. R. China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Department of Materials Science, Fudan University, Shanghai 200433, P. R. China.
authors.forename: Linfeng
authors.initials: L
authors.lastname: Hu
authors.affiliation: Department of Materials Science, Fudan University, Shanghai 200433, P. R. China.
authors.forename: Hui
authors.initials: H
authors.lastname: Liu
authors.affiliation: Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Meiyong
authors.initials: M
authors.lastname: Liao
authors.affiliation: Department of Materials Science, Fudan University, Shanghai 200433, P. R. China.
authors.forename: Xiaosheng
authors.initials: X
authors.lastname: Fang
authors.affiliation: Department of Materials Science, Fudan University, Shanghai 200433, P. R. China.
authors.forename: Limin
authors.initials: L
authors.lastname: Wu