title: Phototransistor based on single In₂Se₃ nanosheets.
abstract: Micrometer-sized single-crystalline In₂Se₃ nanosheets are synthesized by epitaxial growth from In₂Se₃nanowires. The In₂Se₃ nanosheets possess anisotropic structural configuration with intralayer covalent bonding and interlayer van der Waals bonding. Phototransistors based on the In₂Se₃ nanosheets are realized, and the devices show high photoresponsivity and high photo On/Off ratio up to two orders. The photo-gating effect can be modulated by the gate bias, indicating potential utility of the In₂Se₃ nanosheets in a variety of optoelectronic applications.
authors.affiliation: Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P. R. China. wangsd@suda.edu.cn xhsun@suda.edu.cn.
authors.forename: Qin-Liang
authors.initials: QL
authors.lastname: Li
authors.forename: Chang-Hai
authors.initials: CH
authors.lastname: Liu
authors.forename: Yu-Ting
authors.initials: YT
authors.lastname: Nie
authors.forename: Wen-Hua
authors.initials: WH
authors.lastname: Chen
authors.forename: Xu
authors.initials: X
authors.lastname: Gao
authors.forename: Xu-Hui
authors.initials: XH
authors.lastname: Sun
authors.forename: Sui-Dong
authors.initials: SD
authors.lastname: Wang