title: In-plane epitaxial growth of silicon nanowires and junction formation on Si(100) substrates.
abstract: Growing self-assembled silicon nanowires (SiNWs) into precise locations represents a critical capability to scale up SiNW-based functionalities. We here report a novel epitaxy growth phenomenon and strategy to fabricate orderly arrays of self-aligned in-plane SiNWs on Si(100) substrates following exactly the underlying crystallographic orientations. We observe also a rich set of distinctive growth dynamics/modes that lead to remarkably different morphologies of epitaxially grown SiNWs/or grains under variant growth balance conditions. High-resolution transmission electron microscopy cross-section analysis confirms a coherent epitaxy (or partial epitaxy) interface between the in-plane SiNWs and the Si(100) substrate, while conductive atomic force microscopy characterization reveals that electrically rectifying p-n junctions are formed between the p-type doped in-plane SiNWs and the n-type c-Si(100) substrate. This in-plane epitaxy growth could provide an effective means to define nanoscale junction and doping profiles, providing a basis for exploring novel nanoelectronics.
authors.affiliation: School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University , 210093, Nanjing, China.
authors.forename: Linwei
authors.initials: L
authors.lastname: Yu
authors.forename: Mingkun
authors.initials: M
authors.lastname: Xu
authors.forename: Jie
authors.initials: J
authors.lastname: Xu
authors.forename: Zhaoguo
authors.initials: Z
authors.lastname: Xue
authors.forename: Zheng
authors.initials: Z
authors.lastname: Fan
authors.forename: Gennaro
authors.initials: G
authors.lastname: Picardi
authors.forename: Franck
authors.initials: F
authors.lastname: Fortuna
authors.forename: Junzhuan
authors.initials: J
authors.lastname: Wang
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi
authors.forename: Kunji
authors.initials: K
authors.lastname: Chen
authors.forename: Pere
authors.initials: P
authors.lastname: Roca i Cabarrocas
keywords: In-plane nanowire; epitaxy growth; junction formation; self-assembly