title: Incident light adjustable solar cell by periodic nanolens architecture.
abstract: Could nanostructures act as lenses to focus incident light for efficient utilization of photovoltaics? Is it possible, in order to avoid serious recombination loss, to realize periodic nanostructures in solar cells without direct etching in a light absorbing semiconductor? Here we propose and demonstrate a promising architecture to shape nanolenses on a planar semiconductor. Optically transparent and electrically conductive nanolenses simultaneously provide the optical benefit of modulating the incident light and the electrical advantage of supporting carrier transportation. A transparent indium-tin-oxide (ITO) nanolens was designed to focus the incident light-spectrum in focal lengths overlapping to a strong electric field region for high carrier collection efficiency. The ITO nanolens effectively broadens near-zero reflection and provides high tolerance to the incident light angles. We present a record high light-conversion efficiency of 16.0% for a periodic nanostructured Si solar cell.
authors.affiliation: Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260, USA.
authors.forename: Ju-Hyung
authors.initials: JH
authors.lastname: Yun
authors.affiliation: Department of Physics, Ewha Womans University, Seoul 120750, Korea.
authors.forename: Eunsongyi
authors.initials: E
authors.lastname: Lee
authors.affiliation: Patterning Process Department, Nano Process Division, Korea Advanced Nano Fab Center, Suwon 443270, Korea.
authors.forename: Hyeong-Ho
authors.initials: HH
authors.lastname: Park
authors.affiliation: Department of Physics, Ewha Womans University, Seoul 120750, Korea.
authors.forename: Dong-Wook
authors.initials: DW
authors.lastname: Kim
authors.affiliation: Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260, USA.
authors.forename: Wayne A
authors.initials: WA
authors.lastname: Anderson
authors.affiliation: Department of Electrical Engineering, Incheon National University, Incheon 406772, Korea.
authors.forename: Joondong
authors.initials: J
authors.lastname: Kim
authors.affiliation: Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260, USA.
authors.forename: Natalia M
authors.initials: NM
authors.lastname: Litchinitser
authors.affiliation: Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260, USA.
authors.forename: Jinwei
authors.initials: J
authors.lastname: Zeng
authors.affiliation: College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440746, Korea.
authors.forename: Junsin
authors.initials: J
authors.lastname: Yi
authors.affiliation: Department of Electrical Engineering, Incheon National University, Incheon 406772, Korea.
authors.forename: M Melvin David
authors.initials: MM
authors.lastname: Kumar
authors.affiliation: Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260, USA.
authors.forename: Jingbo
authors.initials: J
authors.lastname: Sun