title: Origin of leakage paths driven by electric fields in Al-doped TiO2 films.
abstract: The growth of leakage current paths in Al-doped TiO2 (ATO) films is observed by in situ TEM under negative bias stress. Through systematic HAADF-STEM, STEM-EDS, and STEM-EELS studies, it is confirmed that the electric field-induced growth of the Ru-doped TiO2 phase is the main reason for the ATO film's negative leakage.
authors.affiliation: Samsung Advanced Institute of Technology, San 14-1, Nongseo-Ri, Kiheung-Eub, Yongin-Si, Kyeonggi-Do, 446-712, South Korea.
authors.forename: Gyeong-Su
authors.initials: GS
authors.lastname: Park
authors.forename: Seong Yong
authors.initials: SY
authors.lastname: Park
authors.forename: Sung
authors.initials: S
authors.lastname: Heo
authors.forename: Ohseong
authors.initials: O
authors.lastname: Kwon
authors.forename: Kyuho
authors.initials: K
authors.lastname: Cho
authors.forename: Kwan-Young
authors.initials: KY
authors.lastname: Han
authors.forename: Sung Jin
authors.initials: SJ
authors.lastname: Kang
authors.forename: Aram
authors.initials: A
authors.lastname: Yoon
authors.forename: Miyoung
authors.initials: M
authors.lastname: Kim
mesh_terms: D000535:Aluminum / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission; D010087:Oxides / Q000737:chemistry; D012428:Ruthenium / Q000737:chemistry; D046590:Spectroscopy, Electron Energy-Loss; D014025:Titanium / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D010087:Oxides; C009495:titanium dioxide; D012428:Ruthenium; D000535:Aluminum; D014025:Titanium
keywords: Al-doped TiO2; Ru-doped TiO2; bandgap reduction; high-k; leakage current