Axial InAs/GaAs heterostructures on silicon in a nanowire geometry.
InAs segments were grown on top of GaAs islands, initially created by droplet epitaxy on silicon substrate. We systematically explored the growth-parameter space for the deposition of InAs, identifying the conditions for the selective growth on GaAs and for purely axial growth. The axial InAs segments were formed with their sidewalls rotated by 30° compared to the GaAs base islands underneath. Synchrotron X-ray diffraction experiments revealed that the InAs segments are grown relaxed on top of GaAs, with a predominantly zincblende crystal structure and stacking faults.
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
C
C
Somaschini
A
A
Biermanns
S
S
Bietti
G
G
Bussone
A
A
Trampert
S
S
Sanguinetti
H
H
Riechert
U
U
Pietsch
L
L
Geelhaar