Erbium-doped spiral amplifiers with 20 dB of net gain on silicon.
Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10(20) cm(-3) and 0.95 × 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.
Sergio A
SA
Vázquez-Córdova
Meindert
M
Dijkstra
Edward H
EH
Bernhardi
Feridun
F
Ay
Kerstin
K
Wörhoff
Jennifer L
JL
Herek
Sonia M
SM
García-Blanco
Markus
M
Pollnau
D000669:Amplifiers, Electronic; D017076:Computer-Aided Design; D004867:Equipment Design; D004871:Erbium; D053844:Lasers, Solid-State; D010087:Oxides; D012825:Silicon
D010087:Oxides; C093389:erbium oxide; D004871:Erbium; D012825:Silicon