Synthesis of Pt nanoparticles and their burrowing into Si due to synergistic effects of ion beam energy losses.
We report the synthesis of Pt nanoparticles and their burrowing into silicon upon irradiation of a Pt-Si thin film with medium-energy neon ions at constant fluence (1.0 × 10(17) ions/cm(2)). Several values of medium-energy neon ions were chosen in order to vary the ratio of the electronic energy loss to the nuclear energy loss (S e/S n) from 1 to 10. The irradiated films were characterized using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). A TEM image of a cross section of the film irradiated with S e/S n = 1 shows ≈5 nm Pt NPs were buried up to ≈240 nm into the silicon. No silicide phase was detected in the XRD pattern of the film irradiated at the highest value of S e/S n. The synergistic effect of the energy losses of the ion beam (molten zones are produced by S e, and sputtering and local defects are produced by S n) leading to the synthesis and burrowing of Pt NPs is evidenced. The Pt NP synthesis mechanism and their burrowing into the silicon is discussed in detail.
Inter University Accelerator Centre (IUAC), New Delhi 110067, India.
Pravin
P
Kumar
Inter University Accelerator Centre (IUAC), New Delhi 110067, India.
Udai Bhan
UB
Singh
Inter University Accelerator Centre (IUAC), New Delhi 110067, India.
Kedar
K
Mal
Inter University Accelerator Centre (IUAC), New Delhi 110067, India.
Sunil
S
Ojha
Inter University Accelerator Centre (IUAC), New Delhi 110067, India.
Indra
I
Sulania
Inter University Accelerator Centre (IUAC), New Delhi 110067, India.
Dinakar
D
Kanjilal
National Physical Laboratory (NPL), New Delhi 110012, India.
Dinesh
D
Singh
National Physical Laboratory (NPL), New Delhi 110012, India.
Vidya Nand
VN
Singh
Rutherford backscattering spectroscopy; atomic force microscopy; burrowing of nanoparticles; medium-energy ion irradiation; nuclear and electronic energy loss; scanning electron microscopy; thin films; transmission electron microscopy