Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared.
Germanium-on-silicon thermo-optic phase shifters are demonstrated in the 5 μm wavelength range. Basic phase shifters require 700 mW of power for a 2π phase shift. The required power is brought down to 80 mW by complete undercut using focused ion beam. Finally an efficient thermo-optic phase shifter is demonstrated on the germanium on SOI platform. A tuning power (for a 2π phase shift) of 105 mW is achieved for a Ge-on-SOI structure which is lowered to 16 mW for a free standing phase shifter.
Aditya
A
Malik
Sarvagya
S
Dwivedi
Liesbet
L
Van Landschoot
Muhammad
M
Muneeb
Yosuke
Y
Shimura
Guy
G
Lepage
Joris
J
Van Campenhout
Wendy
W
Vanherle
Tinneke
T
Van Opstal
Roger
R
Loo
Gunther
G
Roelkens
D065638:Absorption, Radiation; D003198:Computer Simulation; D005857:Germanium / Q000737:chemistry*; D007368:Interferometry; D008855:Microscopy, Electron, Scanning; D055620:Optical Phenomena; D012825:Silicon / Q000737:chemistry*; D013055:Spectrophotometry, Infrared / Q000295:instrumentation*; D013696:Temperature
D005857:Germanium; D012825:Silicon