Vertically architectured stack of multiple graphene field-effect transistors for flexible electronics.
Vertically architectured stack of multiple graphene field-effect transistors (GFETs) on a flexible substrate show great mechanical flexibility and robustness. The four GFETs are integrated in the vertical direction, and dually gated GFETs with graphene channel, PMMA dielectrics, and graphene gate electrodes are realized.
State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing, 100871, PR China; Collaborative Innovation Center of Quantum Matter, Beijing, PR China.
Jie
J
Meng
Jing-Jing
JJ
Chen
Liang
L
Zhang
Ya-Qing
YQ
Bie
Zhi-Min
ZM
Liao
Da-Peng
DP
Yu
PMMA gate dielectric; flexible electronics; graphene FETs; vertical stack