Interface atomic-scale structure and its impact on quantum electron transport.
Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/Ti3 SiC2 interface in Ohmic contact to p-type SiC, which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.
WPI Research Center Advanced Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan).
Zhongchang
Z
Wang
WPI Research Center Advanced Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan).
Mitsuhiro
M
Saito
WPI Research Center Advanced Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan).
Susumu
S
Tsukimoto
WPI Research Center Advanced Institute for Materials Research, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan).|Institute of Engineering Innovation The University of Tokyo 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan).
Yuichi
Y
Ikuhara
Atomic-scale structures; Interfaces; Quantum electron transport; Schottky barrier; Structure-property relationships