The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se.
The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge(0.6)Se(0.4) (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap (Eg) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy (Ea) for electrical conduction was found to decrease down to about one third of Eg from a half. As to the device characteristics, we found that the threshold switching voltage (Vth) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate Vth of an OTS device for various applications.
1] Electronic Materials Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu. 136-791, Seoul, Republic of Korea [2] Department of Materials Science and Engineering, Korea Aerospace University, Gyeonggi. 412-791, Republic of Korea.
Sang-Yeol
SY
Shin
Electronic Materials Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu. 136-791, Seoul, Republic of Korea.
J M
JM
Choi
1] Electronic Materials Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu. 136-791, Seoul, Republic of Korea [2] Department of Nanomaterials Science and Engineering, University of Science and Technology, Daejon 305-350, South Korea.
Juhee
J
Seo
Electronic Materials Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu. 136-791, Seoul, Republic of Korea.
Hyung-Woo
HW
Ahn
Department of Materials Science and Engineering, Korea Aerospace University, Gyeonggi. 412-791, Republic of Korea.
Yong Gyu
YG
Choi
Electronic Materials Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu. 136-791, Seoul, Republic of Korea.
Byung-ki
BK
Cheong
Electronic Materials Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu. 136-791, Seoul, Republic of Korea.
Suyoun
S
Lee