A new non-destructive readout by using photo-recovered surface potential contrast.
Ferroelectric random access memory is still challenging in the feature of combination of room temperature stability, non-destructive readout and high intensity storage. As a non-contact and non-destructive information readout method, surface potential has never been paid enough attention because of the unavoidable decay of the surface potential contrast between oppositely polarized domains. That is mainly due to the recombination of the surface movable charges around the domain walls. Here, by introducing a laser beam into the combination of piezoresponse force microscopy and Kelvin probe force microscopy, we demonstrate that the surface potential contrast of BiFeO3 films can be recovered under light illumination. The recovering mechanism is understood based on the redistribution of the photo-induced charges driven by the internal electric field. Furthermore, we have created a 12-cell memory pattern based on BiFeO3 films to show the feasibility of such photo-assisted non-volatile and non-destructive readout of the ferroelectric memory.
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Le
L
Wang
1] Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2] Collaborative Innovation Center of Quantum Matter, Beijing 100190, China.
Kui-juan
KJ
Jin
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Jun-xing
JX
Gu
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Chao
C
Ma
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Xu
X
He
Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, USA.
Jiandi
J
Zhang
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Can
C
Wang
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Yu
Y
Feng
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Qian
Q
Wan
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Jin-an
JA
Shi
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Lin
L
Gu
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Meng
M
He
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Hui-bin
HB
Lu
1] Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2] Collaborative Innovation Center of Quantum Matter, Beijing 100190, China.
Guo-zhen
GZ
Yang