Self-powered ultrafast broadband photodetector based on p-n heterojunctions of CuO/Si nanowire array.
A new self-powered broadband photodetector was fabricated by coating an n-silicon nanowire (n-Si NW) array with a layer of p-cupric oxide (CuO) nanoflakes through a new simple solution synthesis method. The p-n heterojunction shows excellent rectification characteristics in the dark and distinctive photovoltaic behavior under broadband light illumination. The photoresponse of the detector at zero bias voltage shows that this self-powered photodetector is highly sensitive to visible and near-infrared light illuminations, with excellent stability and reproducibility. Ultrafast response rise and recovery times of 60 and 80 μs, respectively, are shown by the CuO based nanophotodetector. In addition, the broadband photodetector can also provide a rapid binary response, with current changing from positive to negative upon illumination under a small bias. The binary response arises from the photovoltaic behavior and the low turn-on voltage of the CuO/Si NW device. These properties make the CuO/Si NW broadband photodetector suitable for applications that require high response speeds and self-sufficient functionality.
Functional Nanomaterials Laboratory, Center for Micro/Nanomaterials and Technology and Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences (CAS) , Beijing 100190, China.
Qingshui
Q
Hong
Yang
Y
Cao
Jia
J
Xu
Huimin
H
Lu
Junhui
J
He
Jia-Lin
JL
Sun
broadband photodetector, heterojunctions, silicon nanowire array; cupric oxide; response speed; self-powered