Quasi-linear vacancy dynamics modeling and circuit analysis of the bipolar memristor.
The quasi-linear transport equation is investigated for modeling the bipolar memory resistor. The solution accommodates vacancy and circuit level perspectives on memristance. For the first time in literature the component resistors that constitute the contemporary dual variable resistor circuit model are quantified using vacancy parameters and derived from a governing partial differential equation. The model describes known memristor dynamics even as it generates new insight about vacancy migration, bottlenecks to switching speed and elucidates subtle relationships between switching resistance range and device parameters. The model is shown to comply with Chua's generalized equations for the memristor. Independent experimental results are used throughout, to validate the insights obtained from the model. The paper concludes by implementing a memristor-capacitor filter and compares its performance to a reference resistor-capacitor filter to demonstrate that the model is usable for practical circuit analysis.
Cloud Platform Group, Intel Corporation, Dupont, Washington, United States of America; and Department of Electrical Engineering, University of Washington, Seattle, Washington, United States of America.
Isaac
I
Abraham
D003198:Computer Simulation; D017097:Electric Impedance; D004563:Electrochemistry / Q000379:methods*; D004867:Equipment Design; D015233:Models, Statistical; D036103:Nanotechnology / Q000295:instrumentation*; D012815:Signal Processing, Computer-Assisted / Q000295:instrumentation*