Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared.
CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated. Responsivities of 9.9 ± 2.0 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 2.7 - 4.5%. The dark current is found to vary from a few microamps down to less than a nanoamp after a post-implantation annealing of 350°C. The measured photocurrent dependence on input power shows a linear correspondence over more than three decades, and the frequency response of a 250 µm-length p-i-n device is measured to be ~1.7 GHz for a wavelength of λ = 2.2 µm, thus potentially opening up new communication bands for photonic integrated circuits.
Brian
B
Souhan
Richard R
RR
Grote
Christine P
CP
Chen
Hsu-Cheng
HC
Huang
Jeffrey B
JB
Driscoll
Ming
M
Lu
Aaron
A
Stein
Hassaram
H
Bakhru
Keren
K
Bergman
William M J
WM
Green
Richard M
RM
Osgood