Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs.
This paper aims to investigate the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different symmetry. The GaN epitaxial layers grown on the hexagonal lattice arrangement PSS (HLAPSS) have a lower compressive strain than the ones grown on the square lattice arrangement PSS (SLAPSS). The quantum-confined Stark effect (QCSE) is also affected by the residual compressive strain. Based on the experimentally measured data and the ray tracing simulation results, the InGaN-based LED with the HLAPSS has a higher LOP than the one with the SLAPSS due to the weaker QCSE within multiple-quantum wells (MQWs).
Graduate Institute of Electronic Engineering and Department of Electrical Engineering, National Taiwan University, No. 1, Roosevelt Road Section 4, Daan District, Taipei 10617, Taiwan.
Yao-Hong
YH
You
Graduate Institute of Electronic Engineering and Department of Electrical Engineering, National Taiwan University, No. 1, Roosevelt Road Section 4, Daan District, Taipei 10617, Taiwan.
Vin-Cent
VC
Su
Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan.
Ti-En
TE
Ho
Department of Materials Science and Engineering, National Chiao Tung University, No. 1001, Daxue Road, East District, Hsinchu 300, Taiwan.
Bo-Wen
BW
Lin
Graduate Institute of Electronic Engineering and Department of Electrical Engineering, National Taiwan University, No. 1, Roosevelt Road Section 4, Daan District, Taipei 10617, Taiwan.
Ming-Lun
ML
Lee
Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan.
Atanu
A
Das
Sino-American Silicon Products Incorporated, No. 8, Industrial East Road 2, Science-Based Industrial Park, Hsinchu 300, Taiwan.
Wen-Ching
WC
Hsu
Graduate Institute of Electronic Engineering and Department of Electrical Engineering, National Taiwan University, No. 1, Roosevelt Road Section 4, Daan District, Taipei 10617, Taiwan.
Chieh-Hsiung
CH
Kuan
Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan 333, Taiwan.
Ray-Ming
RM
Lin
GaN; Light-emitting diodes; Patterned sapphire substrates; Quantum-confined Stark effect