Layer-controlled CVD growth of large-area two-dimensional MoS2 films.
In spite of the recent heightened interest in molybdenum disulfide (MoS2) as a two-dimensional material with substantial bandgaps and reasonably high carrier mobility, a method for the layer-controlled and large-scale synthesis of high quality MoS2 films has not previously been established. Here, we demonstrate that layer-controlled and large-area CVD MoS2 films can be achieved by treating the surfaces of their bottom SiO2 substrates with the oxygen plasma process. Raman mapping, UV-Vis, and PL mapping are performed to show that mono, bi, and trilayer MoS2 films grown on the plasma treated substrates fully cover the centimeter scale substrates with a uniform thickness. Our TEM images also present the single crystalline nature of the monolayer MoS2 film and the formation of the layer-controlled bi- and tri-layer MoS2 films. Back-gated transistors fabricated on these MoS2 films are found to exhibit the high current on/off ratio of ∼10(6) and high mobility values of 3.6 cm(2) V(-1) s(-1) (monolayer), 8.2 cm(2) V(-1) s(-1) (bilayer), and 15.6 cm(2) V(-1) s(-1) (trilayer). Our results are expected to have a significant impact on further studies of the MoS2 growth mechanism as well as on the scaled layer-controlled production of high quality MoS2 films for a wide range of applications.
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
Jaeho
J
Jeon
Sung Kyu
SK
Jang
Su Min
SM
Jeon
Gwangwe
G
Yoo
Yun Hee
YH
Jang
Jin-Hong
JH
Park
Sungjoo
S
Lee