Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching.
Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Nantou 545, Taiwan. timcychen@ncnu.edu.tw.
Chia-Yun
CY
Chen
Yu-Rui
YR
Liu