Nanometer-Thick Single-Crystal Hexagonal Gd2 O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology.
Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagonal Gd2 O3 is perhaps the lowest on GaN-metal-oxide-semiconductor devices. The heterostructure is thermo dynamically stable at high temperatures and exhibits low interfacial densities of states after high-temperature annealing.
Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, 30013 (Taiwan).
Wen Hsin
WH
Chang
Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, 30013 (Taiwan).
Chih Hsun
CH
Lee
Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, 30013 (Taiwan).
Yao Chung
YC
Chang
Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, 30013 (Taiwan).
Pen
P
Chang
Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, 30013 (Taiwan).
Mao Lin
ML
Huang
Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, 30013 (Taiwan).
Yi Jun
YJ
Lee
National Synchrotron Radiation Research Center Hsinchu (Taiwan).
Chia-Hung
CH
Hsu
HUGA Optotech Inc., Taichung (Taiwan).
J Minghuang
JM
Hong
HUGA Optotech Inc., Taichung (Taiwan).
Chiung Chi
CC
Tsai
Department of Physics, National Tsing Hua University Hsinchu, 30013 (Taiwan).
J Raynien
JR
Kwo
Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, 30013 (Taiwan).
Minghwei
M
Hong
Gadolinium oxide; Galliumnitrid; High-dielectric-constant materials; Molecular beam epitaxy; Semiconductors