n-type chalcogenides by ion implantation.
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (~5-11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.
Department of Electronic Engineering, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK.
Mark A
MA
Hughes
Department of Electronic Engineering, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK.
Yanina
Y
Fedorenko
Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK.
Behrad
B
Gholipour
Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK.
Jin
J
Yao
Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, UK.
Tae-Hoon
TH
Lee
Department of Electronic Engineering, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK.
Russell M
RM
Gwilliam
Department of Electronic Engineering, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK.
Kevin P
KP
Homewood
The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey, Guildford GU2 7XH, UK.
Steven
S
Hinder
Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK.
Daniel W
DW
Hewak
Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, UK.
Stephen R
SR
Elliott
Department of Electronic Engineering, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK.
Richard J
RJ
Curry