Investigation of the light field of a semiconductor diode laser.
Scanning near-field optical microscopy was applied to study, with sub-wavelength spatial resolution, the near- and the far-field distributions of propagating modes from a high-power laser diode. Simple modeling was also performed and compared with experimental results. The simulated distributions were consistent with the experiment and permitted clarification of the configuration of the transverse modes of the laser.
A V
AV
Ankudinov
M L
ML
Yanul
S O
SO
Slipchenko
A V
AV
Shelaev
P S
PS
Dorozhkin
A A
AA
Podoskin
I S
IS
Tarasov
D004867:Equipment Design; D054023:Lasers, Semiconductor; D008027:Light; D018625:Microscopy, Atomic Force / Q000379:methods*; D036103:Nanotechnology / Q000295:instrumentation*; D012542:Scattering, Radiation