Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory.
A 3D high-density switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize high-density ReRAM applications.
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 790-784, Republic of Korea.
Daeseok
D
Lee
Jaesung
J
Park
Jaehyuk
J
Park
Jiyong
J
Woo
Euijun
E
Cha
Sangheon
S
Lee
Kibong
K
Moon
Jeonghwan
J
Song
Yunmo
Y
Koo
Hyunsang
H
Hwang
3D structure; cross-point array; metal-insulator transition; non-volatilememory; titanium oxide; two-terminal switch