title: Hardware implementation of associative memory characteristics with analogue-type resistive-switching device.
abstract: We have investigated the analogue memory characteristics of an oxide-based resistive-switching device under an electrical pulse to mimic biological spike-timing-dependent plasticity synapse characteristics. As a synaptic device, a TiN/Pr0.7Ca0.3MnO3-based resistive-switching device exhibiting excellent analogue memory characteristics was used to control the synaptic weight by applying various pulse amplitudes and cycles. Furthermore, potentiation and depression characteristics with the same spikes can be achieved by applying negative and positive pulses, respectively. By adopting complementary metal-oxide-semiconductor devices as neurons and TiN/PCMO devices as synapses, we implemented neuromorphic hardware that mimics associative memory characteristics in real time for the first time. Owing to their excellent scalability, resistive-switching devices, shows promise for future high-density neuromorphic applications.
authors.affiliation: Pohang University of Science and Technology, Pohang, 790-784, Korea. kbmoon@postech.ac.kr
authors.forename: Kibong
authors.initials: K
authors.lastname: Moon
authors.forename: Sangsu
authors.initials: S
authors.lastname: Park
authors.forename: Junwoo
authors.initials: J
authors.lastname: Jang
authors.forename: Daeseok
authors.initials: D
authors.lastname: Lee
authors.forename: Jiyong
authors.initials: J
authors.lastname: Woo
authors.forename: Euijun
authors.initials: E
authors.lastname: Cha
authors.forename: Sangheon
authors.initials: S
authors.lastname: Lee
authors.forename: Jaesung
authors.initials: J
authors.lastname: Park
authors.forename: Jeonghwan
authors.initials: J
authors.lastname: Song
authors.forename: Yunmo
authors.initials: Y
authors.lastname: Koo
authors.forename: Hyunsang
authors.initials: H
authors.lastname: Hwang