title: Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall.
abstract: We report the extraordinary tunneling process that finds the lower cohesive energy route for stablizing InN shell layer on m-plane sidewall of GaN nanorod. The [0001] orientated GaN nanorod array is grown on sapphire substrate patterned with Ga nanoparticle by metal-organic vapor deposition method, based on which the simulation structures of c-plane top surface and m-plane sidewall surface is constructed for the first-principles calculations. The results show that the introduction of In wetting monolayer could effectively lower the cohesive energy of adalayers on non-polar GaN surfaces. Most importantly, it is revealed that there exists an extraordinary tunneling process in which the N atoms will drag out the In wetting atoms and tunnel through to form stable InN shell layer on the nanorod sidewall.
authors.affiliation: Fujian Key Laboratory of Semiconductor Materials and Applications, School of Physics and Mechanical & Electrical Engineering, Xiamen University, Xiamen 361005, People's Republic of China. dcai@xmu.edu.cn
authors.forename: Duanjun
authors.initials: D
authors.lastname: Cai
authors.forename: Na
authors.initials: N
authors.lastname: Lin
authors.forename: Hongmei
authors.initials: H
authors.lastname: Xu
authors.forename: Che-Hao
authors.initials: CH
authors.lastname: Liao
authors.forename: C C
authors.initials: CC
authors.lastname: Yang