title: Fabrication and characteristics of GaN-based light-emitting diodes with a reduced graphene oxide current-spreading layer.
abstract: A reduced graphene oxide (GO) layer was produced on undoped and n-type GaN, and its effect on the current- and heat-spreading properties of GaN-based light-emitting diodes (LEDs) was studied. The reduced GO inserted between metal electrode and GaN semiconductor acted as a conducting layer and enhanced lateral current flow in the device. Especially, introduction of the reduced GO layer on the n-type GaN improved the electrical performance of the device, relative to that of conventional LEDs, due to a decrease in the series resistance of the device. The enhanced current-spreading was further of benefit, giving the device a higher light output power and a lower junction temperature at high injection currents. These results therefore indicate that reduced GO can be a suitable current and heat-spreading layer for GaN-based LEDs.
authors.affiliation: School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University , Jeonju, 561-756, South Korea.
authors.forename: Beo Deul
authors.initials: BD
authors.lastname: Ryu
authors.forename: Min
authors.initials: M
authors.lastname: Han
authors.forename: Nam
authors.initials: N
authors.lastname: Han
authors.forename: Young Jae
authors.initials: YJ
authors.lastname: Park
authors.forename: Kang Bok
authors.initials: KB
authors.lastname: Ko
authors.forename: Tae Hyun
authors.initials: TH
authors.lastname: Lim
authors.forename: S
authors.initials: S
authors.lastname: Chandramohan
authors.forename: Tran Viet
authors.initials: TV
authors.lastname: Cuong
authors.forename: Chel-Jong
authors.initials: CJ
authors.lastname: Choi
authors.forename: Jaehee
authors.initials: J
authors.lastname: Cho
authors.forename: Chang-Hee
authors.initials: CH
authors.lastname: Hong
keywords: GaN; current-spreading layer; graphene oxide; light-emitting diode; reduced graphene oxide; thermal reduction