title: A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene.
abstract: Graphene has attracted considerable interest as a potential material for future electronics. Although mechanical peel is known to produce high quality graphene flakes, practical applications require continuous graphene layers over a large area. The catalyst-assisted chemical vapor deposition (CVD) is a promising synthetic method to deliver wafer-sized graphene. Here we present a systematic study on the nucleation and growth of crystallized graphene domains in an atmospheric pressure chemical vapor deposition (APCVD) process. Parametric studies show that the mean size of the graphene domains increases with increasing growth temperature and CH4partial pressure, while the density of domains decreases with increasing growth temperature and is independent of the CH4partial pressure. Our studies show that nucleation of graphene domains on copper substrate is highly dependent on the initial annealing temperature. A two-step synthetic process with higher initial annealing temperature but lower growth temperature is developed to reduce domain density and achieve high quality full-surface coverage of monolayer graphene films. Electrical transport measurements demonstrate that the resulting graphene exhibits a high carrier mobility of up to 3000 cm2V-1s-1at room temperature.
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, California, 90095, USA ; Department of Materials Science and Engineering, University of California, Los Angeles, California, 90095, USA.
authors.forename: Lixin
authors.initials: L
authors.lastname: Liu
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, California, 90095, USA.
authors.forename: Hailong
authors.initials: H
authors.lastname: Zhou
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California, 90095, USA.
authors.forename: Rui
authors.initials: R
authors.lastname: Cheng
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California, 90095, USA.
authors.forename: Yu
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California, 90095, USA.
authors.forename: Yung-Chen
authors.initials: YC
authors.lastname: Lin
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, California, 90095, USA.
authors.forename: Yongquan
authors.initials: Y
authors.lastname: Qu
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California, 90095, USA.
authors.forename: Jingwei
authors.initials: J
authors.lastname: Bai
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, California, 90095, USA.
authors.forename: Ivan A
authors.initials: IA
authors.lastname: Ivanov
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, California, 90095, USA.
authors.forename: Gang
authors.initials: G
authors.lastname: Liu
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, California, 90095, USA ; California Nanosystems Institute, University of California, Los Angeles, California, 90095, USA.
authors.forename: Yu
authors.initials: Y
authors.lastname: Huang
authors.affiliation: Department of Chemistry and Biochemistry, University of California, Los Angeles, California, 90095, USA ; California Nanosystems Institute, University of California, Los Angeles, California, 90095, USA.
authors.forename: Xiangfeng
authors.initials: X
authors.lastname: Duan