title: A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory.
abstract: This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, with a memory window maintained 2 V after 10(4) s. By extrapolation, 95% of the original charge can be stored for 10 years. In the future, this device will be applied to multi-layer Si ICs in fully functional systems on panels, active-matrix liquid-crystal displays, and three-dimensional (3D) stacked flash memory.
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Mu-Shih
authors.initials: MS
authors.lastname: Yeh
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Yung-Chun
authors.initials: YC
authors.lastname: Wu
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Kuan-Cheng
authors.initials: KC
authors.lastname: Liu
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Ming-Hsien
authors.initials: MH
authors.lastname: Chung
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Yi-Ruei
authors.initials: YR
authors.lastname: Jhan
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Min-Feng
authors.initials: MF
authors.lastname: Hung
authors.affiliation: Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang Fu Road, Hsinchu 30013, Taiwan.
authors.forename: Lun-Chun
authors.initials: LC
authors.lastname: Chen
keywords: Fin field-effect transistor; Flash memory; Gate-all-around; Junctionless; Nonvolatile memory; One-time programming; Single poly-Si; Three-dimensional