title: Spin-electricity conversion induced by spin injection into topological insulators.
abstract: We report successful spin injection into the surface states of topological insulators by using a spin pumping technique. By measuring the voltage that shows up across the samples as a result of spin pumping, we demonstrate that a spin-electricity conversion effect takes place in the surface states of bulk-insulating topological insulators Bi(1.5)Sb(0.5)Te(1.7)Se(1.3) and Sn-doped Bi(2)Te(2)Se. In this process, the injected spins are converted into a charge current along the Hall direction due to the spin-momentum locking on the surface state.
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Shiomi
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Nomura
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Kajiwara
authors.affiliation: Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Eto
authors.affiliation: Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Novak
authors.affiliation: Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan.
authors.forename: Kouji
authors.initials: K
authors.lastname: Segawa
authors.affiliation: Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan.
authors.forename: Yoichi
authors.initials: Y
authors.lastname: Ando
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan and WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan and CREST, Japan Science and Technology Agency, Tokyo 102-0076, Japan and Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan.
authors.forename: E
authors.initials: E
authors.lastname: Saitoh