title: Hard X-ray detection using a single 100 nm diameter nanowire.
abstract: Submicron sized sensors could allow higher resolution in X-ray imaging and diffraction measurements, which are ubiquitous for materials science and medicine. We present electrical measurements of a single 100 nm diameter InP nanowire transistor exposed to hard X-rays. The X-ray induced conductance is over 5 orders of magnitude larger than expected from reported data for X-ray absorption and carrier lifetimes. Time-resolved measurements show very long characteristic lifetimes on the order of seconds, tentatively attributed to long-lived traps, which give a strong amplification effect. As a proof of concept, we use the nanowire to directly image an X-ray nanofocus with submicron resolution.
authors.affiliation: Institute for X-ray Physics, University of Göttingen , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.
authors.forename: Jesper
authors.initials: J
authors.lastname: Wallentin
authors.forename: Markus
authors.initials: M
authors.lastname: Osterhoff
authors.forename: Robin N
authors.initials: RN
authors.lastname: Wilke
authors.forename: Karl-Magnus
authors.initials: KM
authors.lastname: Persson
authors.forename: Lars-Erik
authors.initials: LE
authors.lastname: Wernersson
authors.forename: Michael
authors.initials: M
authors.lastname: Sprung
authors.forename: Tim
authors.initials: T
authors.lastname: Salditt
keywords: III−V; Nanowires; X-rays; detector