title: Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation.
abstract: Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm(2) V(-1) s(-1) is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the "reading" and "programming" speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.
authors.affiliation: School of Electronic Science and Engineering, Collaborative Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Huabin
authors.initials: H
authors.lastname: Sun
authors.affiliation: School of Electronic Science and Engineering, Collaborative Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Qijing
authors.initials: Q
authors.lastname: Wang
authors.affiliation: School of Electronic Science and Engineering, Collaborative Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Yun
authors.initials: Y
authors.lastname: Li
authors.affiliation: International Centre for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Yen-Fu
authors.initials: YF
authors.lastname: Lin
authors.affiliation: School of Electronic Science and Engineering, Collaborative Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Wang
authors.affiliation: School of Electronic Science and Engineering, Collaborative Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Yao
authors.initials: Y
authors.lastname: Yin
authors.affiliation: International Centre for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Yong
authors.initials: Y
authors.lastname: Xu
authors.affiliation: International Centre for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Chuan
authors.initials: C
authors.lastname: Liu
authors.affiliation: International Centre for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Kazuhito
authors.initials: K
authors.lastname: Tsukagoshi
authors.affiliation: School of Electronic Science and Engineering, Collaborative Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Lijia
authors.initials: L
authors.lastname: Pan
authors.affiliation: Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China.
authors.forename: Xizhang
authors.initials: X
authors.lastname: Wang
authors.affiliation: Key Laboratory of Mesoscopic Chemistry of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Hu
authors.affiliation: School of Electronic Science and Engineering, Collaborative Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Shi