title: Graphene nanoribbon field-effect transistor at high bias.
abstract: Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, current, and finally breakdown voltage (BV). It is seen that a typical GNR field-effect transistor's (GNRFET) breakdown voltage is in the range of 0.5 to 3 V for different channel lengths, and compared with silicon similar counterparts, it is less. Furthermore, the likely mechanism of breakdown is studied.
authors.affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor Darul Takzim 81310, Malaysia.
authors.forename: Mahdiar
authors.initials: M
authors.lastname: Ghadiry
authors.affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor Darul Takzim 81310, Malaysia.
authors.forename: Razali
authors.initials: R
authors.lastname: Ismail
authors.affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor Darul Takzim 81310, Malaysia.
authors.forename: Mehdi
authors.initials: M
authors.lastname: Saeidmanesh
authors.affiliation: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor Darul Takzim 81310, Malaysia.
authors.forename: Mohsen
authors.initials: M
authors.lastname: Khaledian
authors.affiliation: School of Electrical and Electronic Engineering, Univesiti Sains Malaysia, Pulau Pinang 14300, Malaysia.
authors.forename: Asrulnizam Abd
authors.initials: AA
authors.lastname: Manaf
keywords: Breakdown; Current; Fabrication; Graphene; High bias; Model