title: Repeated growth-etching-regrowth for large-area defect-free single-crystal graphene by chemical vapor deposition.
abstract: Reducing nucleation density and healing structural defects are two challenges for fabricating large-area high-quality single-crystal graphene, which is essential for its electronic and optoelectronic applications. We have developed a method involving chemical vapor deposition (CVD) growth followed by repeated etching-regrowth, to solve both problems at once. Using this method, we can obtain single-crystal graphene domains with a size much larger than that allowed by the nucleation density in the initial growth and efficiently heal structural defects similar to graphitization but at a much lower temperature, both of which are impossible to realize by conventional CVD. Using this method with Pt as a growth substrate, we have grown ∼3 mm defect-free single-crystal graphene domains with a carrier mobility up to 13,000 cm2 V(-1) s(-1) under ambient conditions.
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road, Shenyang 110016, People's Republic of China.
authors.forename: Teng
authors.initials: T
authors.lastname: Ma
authors.forename: Wencai
authors.initials: W
authors.lastname: Ren
authors.forename: Zhibo
authors.initials: Z
authors.lastname: Liu
authors.forename: Le
authors.initials: L
authors.lastname: Huang
authors.forename: Lai-Peng
authors.initials: LP
authors.lastname: Ma
authors.forename: Xiuliang
authors.initials: X
authors.lastname: Ma
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Zhang
authors.forename: Lian-Mao
authors.initials: LM
authors.lastname: Peng
authors.forename: Hui-Ming
authors.initials: HM
authors.lastname: Cheng
keywords: chemical vapor deposition; defect free; graphene; large size; single crystal