title: High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.
abstract: A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain.
authors.affiliation: Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea.
authors.forename: Yong-Ha
authors.initials: YH
authors.lastname: Song
authors.forename: Sang-Joon Kenny
authors.initials: SJ
authors.lastname: Ahn
authors.forename: Min-Wu
authors.initials: MW
authors.lastname: Kim
authors.forename: Jeong-Oen
authors.initials: JO
authors.lastname: Lee
authors.forename: Chi-Sun
authors.initials: CS
authors.lastname: Hwang
authors.forename: Jae-Eun
authors.initials: JE
authors.lastname: Pi
authors.forename: Seung-Deok
authors.initials: SD
authors.lastname: Ko
authors.forename: Kwang-Wook
authors.initials: KW
authors.lastname: Choi
authors.forename: Sang-Hee Ko
authors.initials: SH
authors.lastname: Park
authors.forename: Jun-Bo
authors.initials: JB
authors.lastname: Yoon
keywords: MEMS; complementary logic inverters; device fabrication; flexible electronics; integrated circuits; oxide TFTs; switches