title: Robust surface state transport in thin bismuth nanoribbons.
abstract: While a two-dimensional (2D) metallic surface state in bismuth has been proposed, experimental 2D evidence of quantum transport, e.g., angular dependent Shubnikov-de Haas (SdH) oscillations is still lacking. Here, we report the angular-dependent magnetoresistance measurements in single-crystal Bi nanoribbons, and found that both the low-field weak antilocalization behavior and the high-field angle-dependent SdH oscillations follow exactly the 2D character, indicative of the 2D metallic surface states which dominate the transport properties of thin Bi nanoribbons. Moreover, by controllable exposing the ribbons to ambient environment (1 atm and room temperature), the metallic surface states were found to be robust to the oxidation although the carrier density in the surface states are modified after the exposures. These results suggest that the metallic surface states in Bi nanoribbons should be topologically protected which can provide key information in understanding the surface properties of Bi in nanometer scale.
authors.affiliation: High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, P. R. China.
authors.forename: Wei
authors.initials: W
authors.lastname: Ning
authors.affiliation: High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, P. R. China.
authors.forename: Fengyu
authors.initials: F
authors.lastname: Kong
authors.affiliation: High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, P. R. China.
authors.forename: Yuyan
authors.initials: Y
authors.lastname: Han
authors.affiliation: High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, P. R. China.
authors.forename: Haifeng
authors.initials: H
authors.lastname: Du
authors.affiliation: High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, P. R. China.
authors.forename: Jiyong
authors.initials: J
authors.lastname: Yang
authors.affiliation: 1] High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, P. R. China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China.
authors.forename: Mingliang
authors.initials: M
authors.lastname: Tian
authors.affiliation: 1] High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui, P. R. China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China.
authors.forename: Yuheng
authors.initials: Y
authors.lastname: Zhang