title: Epitaxial growth of few-layer MoS2(0001) on FeS2{100}.
abstract: Physical vapour deposition of Mo on an FeS2{100} surface was performed at 170 K. Near-epitaxial growth of MoS2(0001) overlayers of the order of 1 nm thickness was observed when the Mo-covered substrate was subsequently heated to 600 K.
authors.affiliation: Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, UK. smd37@cam.ac.uk.
authors.forename: T
authors.initials: T
authors.lastname: Liu
authors.forename: I
authors.initials: I
authors.lastname: Temprano
authors.forename: D A
authors.initials: DA
authors.lastname: King
authors.forename: S M
authors.initials: SM
authors.lastname: Driver
authors.forename: S J
authors.initials: SJ
authors.lastname: Jenkins