title: Superconductivity above 100 K in single-layer FeSe films on doped SrTiO3.
abstract: Recent experiments on FeSe films grown on SrTiO3 (STO) suggest that interface effects can be used as a means to reach superconducting critical temperatures (Tc) of up to 80 K (ref. ). This is nearly ten times the Tc of bulk FeSe and higher than the record value of 56 K for known bulk Fe-based superconductors. Together with recent studies of superconductivity at oxide heterostructure interfaces, these results rekindle the long-standing idea that electron pairing at interfaces between two different materials can be tailored to achieve high-temperature superconductivity. Subsequent angle-resolved photoemission spectroscopy measurements of the FeSe/STO system revealed an electronic structure distinct from bulk FeSe (refs , ), with an energy gap vanishing at around 65 K. However, ex situ electrical transport measurements have so far detected zero resistance-the key experimental signature of superconductivity-only below 30 K. Here, we report the observation of superconductivity with Tc above 100 K in the FeSe/STO system by means of in situ four-point probe electrical transport measurements. This finding confirms FeSe/STO as an ideal material for studying high-Tc superconductivity.
authors.affiliation: Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road Shanghai 200240, China.
authors.forename: Jian-Feng
authors.initials: JF
authors.lastname: Ge
authors.affiliation: Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road Shanghai 200240, China.
authors.forename: Zhi-Long
authors.initials: ZL
authors.lastname: Liu
authors.affiliation: 1] Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road Shanghai 200240, China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China.
authors.forename: Canhua
authors.initials: C
authors.lastname: Liu
authors.affiliation: 1] Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road Shanghai 200240, China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China.
authors.forename: Chun-Lei
authors.initials: CL
authors.lastname: Gao
authors.affiliation: 1] Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road Shanghai 200240, China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China.
authors.forename: Dong
authors.initials: D
authors.lastname: Qian
authors.affiliation: Department of Physics, Tsinghua University, Beijing 100084, China.
authors.forename: Qi-Kun
authors.initials: QK
authors.lastname: Xue
authors.affiliation: 1] Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road Shanghai 200240, China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China [3] Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors.forename: Ying
authors.initials: Y
authors.lastname: Liu
authors.affiliation: 1] Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road Shanghai 200240, China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China.
authors.forename: Jin-Feng
authors.initials: JF
authors.lastname: Jia