title: Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.
abstract: We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.
authors.affiliation: Department of Electronic Materials Engineering, Kwangwoon University , 20 Gwangun-ro, Nowon-gu, Seoul 139-701, Republic of Korea.
authors.forename: In-Kyu
authors.initials: IK
authors.lastname: Lee
authors.forename: Kwan Hyi
authors.initials: KH
authors.lastname: Lee
authors.forename: Seok
authors.initials: S
authors.lastname: Lee
authors.forename: Won-Ju
authors.initials: WJ
authors.lastname: Cho
keywords: a-InGaZnO; biosensor; dual gate ISFET; microwave annealing; reliability