title: Gate-tunable resonant tunneling in double bilayer graphene heterostructures.
abstract: We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Babak
authors.initials: B
authors.lastname: Fallahazad
authors.forename: Kayoung
authors.initials: K
authors.lastname: Lee
authors.forename: Sangwoo
authors.initials: S
authors.lastname: Kang
authors.forename: Jiamin
authors.initials: J
authors.lastname: Xue
authors.forename: Stefano
authors.initials: S
authors.lastname: Larentis
authors.forename: Christopher
authors.initials: C
authors.lastname: Corbet
authors.forename: Kyounghwan
authors.initials: K
authors.lastname: Kim
authors.forename: Hema C P
authors.initials: HC
authors.lastname: Movva
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.forename: Leonard F
authors.initials: LF
authors.lastname: Register
authors.forename: Sanjay K
authors.initials: SK
authors.lastname: Banerjee
authors.forename: Emanuel
authors.initials: E
authors.lastname: Tutuc
keywords: Bilayer graphene; heterostructure; hexagonal boron nitride; negative differential resistance; resonant tunneling; tunneling field-effect transistor