title: Formation of nanostructured silicon surfaces by stain etching.
abstract: In this work, we report the fabrication of ordered silicon structures by chemical etching of silicon in vanadium oxide (V2O5)/hydrofluoric acid (HF) solution. The effects of the different etching parameters including the solution concentration, temperature, and the presence of metal catalyst film deposition (Pd) on the morphologies and reflective properties of the etched Si surfaces were studied. Scanning electron microscopy (SEM) was carried out to explore the morphologies of the etched surfaces with and without the presence of catalyst. In this case, the attack on the surfaces with a palladium deposit begins by creating uniform circular pores on silicon in which we distinguish the formation of pyramidal structures of silicon. Fourier transform infrared spectroscopy (FTIR) demonstrates that the surfaces are H-terminated. A UV-Vis-NIR spectrophotometer was used to study the reflectance of the structures obtained. A reflectance of 2.21% from the etched Si surfaces in the wavelength range of 400 to 1,000 nm was obtained after 120 min of etching while it is of 4.33% from the Pd/Si surfaces etched for 15 min.
authors.affiliation: Centre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Thin Films, Surface and Interface Division, 02, Bd. Dr. Frantz Fanon, B.P. 140, Alger-7 Merveilles, 16038 Algiers, Algeria ; Université des Sciences et Technologies Houari Boumediene (USTHB), B.P. 32, El Alia, Bab Ezzouar, 16111 Algiers, Algeria.
authors.forename: Maha
authors.initials: M
authors.lastname: Ayat
authors.affiliation: Centre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Thin Films, Surface and Interface Division, 02, Bd. Dr. Frantz Fanon, B.P. 140, Alger-7 Merveilles, 16038 Algiers, Algeria.
authors.forename: Samia
authors.initials: S
authors.lastname: Belhousse
authors.affiliation: NanoFacility, Instituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, Torino 10135, Italy.
authors.forename: Luca
authors.initials: L
authors.lastname: Boarino
authors.affiliation: Centre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Thin Films, Surface and Interface Division, 02, Bd. Dr. Frantz Fanon, B.P. 140, Alger-7 Merveilles, 16038 Algiers, Algeria.
authors.forename: Noureddine
authors.initials: N
authors.lastname: Gabouze
authors.affiliation: Interdisciplinary Research Institute (IRI), IRI-IEMN, Avenue Poincaré, B.P. 69, 59652 Villeneuve-d'Ascq, France.
authors.forename: Rabah
authors.initials: R
authors.lastname: Boukherroub
authors.affiliation: Université des Sciences et Technologies Houari Boumediene (USTHB), B.P. 32, El Alia, Bab Ezzouar, 16111 Algiers, Algeria.
authors.forename: Mohamed
authors.initials: M
authors.lastname: Kechouane
keywords: Catalyst; Etching time; Silicon; Vanadium oxide