title: Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors.
abstract: The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit antiambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies.
authors.affiliation: Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.
authors.forename: Deep
authors.initials: D
authors.lastname: Jariwala
authors.forename: Vinod K
authors.initials: VK
authors.lastname: Sangwan
authors.forename: Jung-Woo Ted
authors.initials: JW
authors.lastname: Seo
authors.forename: Weichao
authors.initials: W
authors.lastname: Xu
authors.forename: Jeremy
authors.initials: J
authors.lastname: Smith
authors.forename: Chris H
authors.initials: CH
authors.lastname: Kim
authors.forename: Lincoln J
authors.initials: LJ
authors.lastname: Lauhon
authors.forename: Tobin J
authors.initials: TJ
authors.lastname: Marks
authors.forename: Mark C
authors.initials: MC
authors.lastname: Hersam
keywords: carbon nanotube; frequency doubler; indium gallium zinc oxide; phase shift keying; p−n heterojunction; van der Waals heterostructure