title: Isolated electron spins in silicon carbide with millisecond coherence times.
abstract: The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because certain SiC defects have electronic states with sharp optical and spin transitions, they are increasingly recognized as a platform for quantum information and nanoscale sensing. Here, we show that individual electron spins in high-purity monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence times, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route towards wafer-scale quantum technologies.
authors.affiliation: 1] Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA [2] Department of Physics, University of California, Santa Barbara, California 93106, USA.
authors.forename: David J
authors.initials: DJ
authors.lastname: Christle
authors.affiliation: Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA.
authors.forename: Abram L
authors.initials: AL
authors.lastname: Falk
authors.affiliation: 1] Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA [2] Department of Physics, University of California, Santa Barbara, California 93106, USA.
authors.forename: Paolo
authors.initials: P
authors.lastname: Andrich
authors.affiliation: 1] Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA [2] Department of Physics, University of California, Santa Barbara, California 93106, USA.
authors.forename: Paul V
authors.initials: PV
authors.lastname: Klimov
authors.affiliation: Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden.
authors.forename: Jawad Ul
authors.initials: JU
authors.lastname: Hassan
authors.affiliation: Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden.
authors.forename: Nguyen T
authors.initials: NT
authors.lastname: Son
authors.affiliation: Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden.
authors.forename: Erik
authors.initials: E
authors.lastname: Janzén
authors.affiliation: Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan.
authors.forename: Takeshi
authors.initials: T
authors.lastname: Ohshima
authors.affiliation: 1] Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA [2] Department of Physics, University of California, Santa Barbara, California 93106, USA.
authors.forename: David D
authors.initials: DD
authors.lastname: Awschalom